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  • ASM InternationalAnalyst and Investor Technology Seminar Semicon West July 9, 2014

    ENABLING ADVANCED CHIP MANUFACTURING WITH NEW MATERIALS

  • | 2

    SAFE HARBOR STATEMENTS

    Safe Harbor Statement under the U.S. Private Securities Litigation Reform Act of 1995: All

    matters discussed in this business and strategy update, except for any historical data, are

    forward-looking statements. Forward-looking statements involve risks and uncertainties that

    could cause actual results to differ materially from those in the forward-looking statements.

    These include, but are not limited to, economic conditions and trends in the semiconductor

    industry generally and the timing of the industry cycles specifically, currency fluctuations,

    corporate transactions, financing and liquidity matters, the success of restructurings, the timing

    of significant orders, market acceptance of new products, competitive factors, litigation involving

    intellectual property, shareholder and other issues, commercial and economic disruption due to

    natural disasters, terrorist activity, armed conflict or political instability, epidemics and other

    risks indicated in the Company's filings from time to time with the U.S. Securities and Exchange

    Commission, including, but not limited to, the Companys reports on Form 20-F and Form 6-K.

    The company assumes no obligation to update or revise any forward-looking statements to

    reflect future developments or circumstances.

  • | 3

    OUTLINE

    New Materials: Moores law enablers ALD as enabler of new materials

    What is Atomic Layer Deposition (ALD)?

    Key strengths of ALD

    ASM and ALD ASM Products and selected applications Summary and Conclusions

  • | 4

    OUTLINE

    New Materials: Moores law enablers ALD as enabler of new materials

    What is Atomic Layer Deposition (ALD)?

    Key strengths of ALD

    ASM and ALD ASM Products and selected applications Summary and Conclusions

  • | 5

    SCALING IS INCREASINGLY ENABLED

    BY NEW MATERIALS AND 3D TECHNOLOGIES

    Scaling enabled by Litho

    Scaling enabled by Materials

    Scaling enabled by 3D

    1995 2000 2005 2010 20151990 20252020

    Strained Si

    High-k

    3D Memory

    IEDM 2002

    IEDM 2003

    IEDM 2007

    3D SIC

    Chipworks 2012

    Confidential and Proprietary Information

    Double / QuadPatterning

    Low-k

    FinFET

    GAA

    High-mobility channel materials

  • | 6

    INCREASING INTRODUCTION RATE OF NEW MATERIALS

    1960 1970 1980 1990 2000 2010

    SOI

    Cu

    SiOF

    SiGe

    NiSi

    Si(O)N

    W

    Ti/TiN

    (B)PSG

    Si,epi

    SiO,N

    Al-Cu

    SOP

    SiOC

    AlO

    Hf(Si)O

    Ta/TaN

    TaO

    ZrO

    LaO

    SiC

    Cu

    SiOF

    CoSi

    Si(O)N

    W

    Ti/TiN

    (B)PSG

    Si,epi

    SiO,N

    Al-Cu

    SOP

    SiOC

    Ta/TaN

    TaO

    TiSi

    Si(O)N

    WSi, PtSi

    Ti/TiN

    (B)PSG

    Si,epi

    SiO,N

    Al-Cu

    Si(O)N

    WSi, MoSi

    TiW

    (B)PSG

    Si,epi

    SiO,N

    Al-Cu

    (B)PSG

    Si,epi

    SiO, SiN

    Al-Cu

    Si

    SiO, SiN

    Al-Cu

    Starting Matl

    FEOL

    BEOL

    SOI

    Cu

    SiOF

    SiGe

    NiSi

    Si(O)N

    W

    Ti/TiN

    (B)PSG

    Si,epi

    SiO,N

    Al-Cu

    SOP

    SiOC

    AlO

    Hf(Si)O

    Ta/TaN

    TaO

    ZrO

    LaO

    SiC

    SiP

    SiCP

    CoWP

    Co

    2014

    Porous SiOC

  • | 7

    NEW MATERIALS AND PROCESSES: MOORES LAW ENABLERS

    Higher Capacitance, Lower Leakage

    High-k and

    Metal Gates

    DRAM, RF,

    decoupling

    capacitors

    Less Cross Talk, Faster Interconnect

    (Porous)

    Low-k Materials

    Improved

    Metals

    Higher Mobility, Lower Resistance

    Strain and new Channel Materials

    New metal contacts

    Smaller Feature Sizes

    Sub-Rayleigh limit

    patterning using

    SDDP

  • | 8

    SEMICONDUCTOR GROWTH DRIVERS

    SEMICONDUCTOR SALES BY KEY APPLICATION

    Semiconductor growth drivers are mobile devicesPerformance per Watt becoming key metric factor in chip designDriving further innovation in materials

    0

    20

    40

    60

    80

    100

    120

    140

    160

    2011 2012 2013 2014 2015 2016 2017 2018

    (USD billion)

    Premium Smartphone

    Utility/Basic Smartphone

    Traditional Mobile Phone

    Media Tablet, Utility/Basic

    Media Tablet, Premium

    PC, Ultramobile

    PC, Notebook

    PC, Desk-based

    Source: Gartner, April 2014

    CAGR13-18

    -7%

    -20%

    -8%

    +22%

    +9%

    +18%

    +14%

    +6%

  • | 9

    OUTLINE

    New Materials: Moores law enablers ALD as enabler of new materials

    What is Atomic Layer Deposition (ALD)?

    Key strengths of ALD

    ASM and ALD ASM Products and selected applications Summary and Conclusions

  • | 10

    ALD AS AN ENABLER OF NEW MATERIALS

    New materials and 3D applications require more precise and controlled thin film deposition

    Compared to conventional deposition techniques ALD offers superior:

    Uniformity

    Conformality

    Interface control

  • | 11

    WHAT IS ATOMIC LAYER DEPOSITION (ALD)?

    Step 1: (Metal) Precursor Chemi-sorption Step 2: Purge

    Step 3: Reaction to Oxide/Nitride

    with O2, H2O, NH3 co-reactant

    Step 4: Purge

    and repeat

  • | 12

    KEY STRENGTHS OF ALD RELATIVE TO

    CONVENTIONAL DEPOSITION

    Step Coverage

    SEMs Courtesy of Philips Research Labs

    TiN

    Uniformity

    Max

    Min

  • | 13

    OUTLINE

    New Materials: Moores law enablers ALD as enabler of new materials

    What is Atomic Layer Deposition (ALD)?

    Key strengths of ALD

    ASM and ALD ASM Products and selected applications Summary and Conclusions

  • | 14

    ASM AND ALD

    ASM is a leading player in the ALD market ASM introduced ALD into the semiconductor market in 1999

    Developing ALD technology since then

    Strong IP position

    Number 1 in high-k gate and strong position in spacer defined double patterning (SDDP)

    The ALD market offers strong growth opportunities High-k metal gate

    Spacer defined double patterning

    Other emerging applications

  • | 15

    Process Integration

    ASM NEW MATERIALS DEVELOPMENT STRATEGY

    N+3 New Materials Screening

    N+2,3

    Product DevelopmentN+1,2

    ASM MicroChemistry, Finland

    Basic materials R&D

    Chemical synthesis

    Pre-cursor screening

    ASMB @IMEC, Belgium

    Process development

    Integration

    Device characterization

    Product Line Site

    Engineering

    Product development

    Product marketing

    Custo

    mer

    join

    t develo

    pm

    ent

  • | 16

    CRITICAL ALD SUPPLY CHAIN COMPONENTS

    Fundamental

    Capability

    Process

    PerformanceProductivity

    Integrated

    Process

    Final Product

    Capability

    Pre-cursors

    Pre-cursor

    Delivery, Valves and Vessels

    Reactors

    Fab facilities,pumps & abatement

    High productivity tools

  • | 17

    EXTENDIBILITY OF HAFNIUM BASED OXIDES

    chipworks chipworks

    45nm HK first RPMG

    Planar FET 32 nm HK last RPMG

    Planar FET 28nm HK first RPMG

    Planar FET

    22nm HK last RPMG

    FinFET

    chipworks chipworks

    Fra

    ctio

    n o

    f H

    K A

    do

    pte

    rs

    Top: TEMs reproduced with permission of ChipworksBottom: ASM estimates 2012

  • | 18

    OUTLINE

    New Materials: Moores law enablers ALD as enabler of new materials

    What is Atomic Layer Deposition (ALD)?

    Key strengths of ALD

    ASM and ALD ASM products and selected applications Summary and Conclusions

  • | 19

    FINFET CHALLENGES:

    ALD ENABLES FURTHER SCALING IN 3D

    Materials properties and channel length must be uniform over fin height

    Conformal coverage required

    ALD technology has become critical for HK and MG layers

  • | 20

    ASM PRODUCTS

    ALD

    20

    EmerALD XP

    Pulsar XP

    Pulsar XP ALD for high-k

    Cross-flow reactor

    Solid source delivery system

    EmerALD XP ALD for metal gates

    Showerhead reactor

  • | 21

    WHAT IS PLASMA ENHANCED ATOMIC LAYER DEPOSITION (PEALD)?

    Step 1: (Metal) Precursor Chemi-sorption Step 2: Purge

    Step 4: Purge

    and repeat

    Plasma

    Step 3: Reaction to Oxide/Nitride

    or metal with O,N,H Radicals

  • | 22

    ALD IS ENABLING SUB-RAYLEIGH LIMIT LITHOGRAPHY WITH SPACER DEFINED DOUBLE PATTERNING

    Litho-formed Template

    ALD SiO2 Spacer

    Anisotropic Etch

    Pitch: P

    Pitch: P

    90nm

    45nm

    PEALD SiO2 on resist

    Spacer Defined Double Patterning with PEALD in production since 3x nm DRAM and Flash

    Key enablers brought by PEALD Uniformity: CD control

    Low temperatures (50C!!)

    Good step coverage

    Dense films

    Extendible to other materials

  • | 23

    LINERS AND SPACERS FOR 15 AND 10 nm

    FinFETS

    PEALD SiO2 and Si3N4 permanent spacers

    Low temperature (300 500 C)

    High conformality

    High quality (low WER, low leakage current)

    40nm pitch

    PEALD SiO PEALD SiN

  • | 24

    ASM PRODUCTS

    PEALD AND PECV