Elex1_diode Applications (Part1)
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Transcript of Elex1_diode Applications (Part1)
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ECET311Electronic Devices and Circuits
TheoryDIODE APPLICATIONS
(part 1)
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DIODE APPROXIMATIONS
Equivalent circuit – a combination of elements properly chosen to best represent the actual terminal characteristics of the device, system or such in a particular operating region.
To simplify diode networks analysis, three diode approximations are used:
1. Piecewise-linear equivalent circuit
2. Simplified equivalent circuit
3. Ideal equivalent circuit
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Piecewise-linear equivalent circuit
Characteristic curve
- The exact analysis for diodes
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Simplified equivalent circuit
Ideal diode
ID
ID
VD0.7 V for Si0.3 for Ge
Characteristic curve
- Use this model only if R network >> rav
0.7 V for Si0.3 for Ge
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Ideal equivalent circuit
ID
Characteristic curve
ID
VD
- Use this model only if R network >> ravE network >>VT
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LOAD-LINE ANALYSISLOAD-LINE ANALYSIS
The load line plots all possible combinations of diode current (ID) and voltage (VD) for a given circuit. The maximum ID equals E/R, and the maximum VD equals E.
The point where the load line and the characteristic curve intersect is the Q-point, which identifies ID and VD for a particular diode in a given circuit.
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EXAMPLE 1
For the series diode configuration and employing the diode characteristics below, determine:
(a)VDQ and IDQ
(b)VR
Si
10 VE
R1k
ID
10ID(mA)
VD(V)0.8
![Page 8: Elex1_diode Applications (Part1)](https://reader034.fdocuments.net/reader034/viewer/2022051609/5476f578b4af9f791b8b4572/html5/thumbnails/8.jpg)
ANSWER:
(a) Max VD = E = 10V; because the diode is forward biased, there is no voltage drop in the diode.
Max ID = VD/ R = 10 V/ 1 k = 10 mA
(b) VR = IRR = IDQR = (9.25 mA)(1k) = 9.25 V
Or VR = E – VD = 10 – 0.78 V = 9.22 V
10V
IDQ = 9.25 mA
VDQ = 0.78 V
Q point
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EXAMPLE 2
For the series diode configuration and employing the diode characteristics below, determine:
(a)VDQ and IDQ
(b)VR
Si
10 VE
R1k
ID
10ID(mA)
VD(V)0.7
![Page 10: Elex1_diode Applications (Part1)](https://reader034.fdocuments.net/reader034/viewer/2022051609/5476f578b4af9f791b8b4572/html5/thumbnails/10.jpg)
ANSWER:
(a) Max VD = E = 10V; because the diode is forward biased, there is no voltage drop in the diode.
Max ID = VD/ R = 10 V/ 1 k = 10 mA
(b) VR = IRR = IDQR = (9.25 mA)(1k) = 9.25 V
Or VR = E – VD = 10 – 0.7 V = 9.3 V
10V
IDQ = 9.25 mA
VDQ = 0.78 V
Q pointQ point
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EXAMPLE 3
For the series diode configuration and employing the diode characteristics below, determine:
(a)VDQ and IDQ
(b)VR
Si
10 VE
R1k
ID
10ID(mA)
VD(V)0 V
![Page 12: Elex1_diode Applications (Part1)](https://reader034.fdocuments.net/reader034/viewer/2022051609/5476f578b4af9f791b8b4572/html5/thumbnails/12.jpg)
ANSWER:
(a) Max VD = E = 10V; because the diode is forward biased, there is no voltage drop in the diode.
Max ID = VD/ R = 10 V/ 1 k = 10 mA
(b) VR = IRR = IDQR = (10 mA)(1k) = 10V
Or VR = E – VD = 10 – 0V = 10 V
10V
IDQ = 10 mA
VDQ = 0.78 V
Q point
VDQ = 0V
![Page 13: Elex1_diode Applications (Part1)](https://reader034.fdocuments.net/reader034/viewer/2022051609/5476f578b4af9f791b8b4572/html5/thumbnails/13.jpg)
SERIES DIODE CONFIGURATIONS
Constants• Silicon Diode: VD = 0.7 V• Germanium Diode: VD = 0.3 V
Analysis (for silicon)• VD = 0.7 V (or VD = E if E < 0.7 V)• VR = E – VD
• ID = IR = IT = VR / R
Forward BiasForward Bias
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Diodes ideally behave as open circuits
Analysis• VD = E• VR = 0 V• ID = 0 A
Reverse BiasReverse Bias
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EXAMPLE 4:
For the series diode configuration of the figure below,
Determine:
(a) VD
(b) ID
(c) and VR.
Si
8 VE
R2.2k
ID
Note: In the preceding discussions, we will be utilizing the simplified equivalent circuit of a diode
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ANSWER:
VD = 0.7VR = E – VD = 8 – 0.7 = 7.3 VID = IR = VD/ RD = VR/IR = 7.3 V/ 2.2 k = 3.32 mA
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EXAMPLE 5:
For the series diode configuration of the figure below,
Determine:
(a) VD
(b) ID
(c) and VR.
Si
8 VE
R2.2k
ID
![Page 18: Elex1_diode Applications (Part1)](https://reader034.fdocuments.net/reader034/viewer/2022051609/5476f578b4af9f791b8b4572/html5/thumbnails/18.jpg)
ANSWER:
VD = 8 VVR = E – VD = 8 – 8 = 0 VID = IR = VD/ RD = VR/IR = 0V/ 2.2 k = 0 A
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EXAMPLE 6:
For the series diode configuration of the figure below,
Determine:
(a) VD
(b) ID
(c) and VR.
Si
0.5 VE
R1.2 k
ID
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ANSWER
VD = 0.5 V; although the diode is forward biased, the forward bias voltage is not enough to make the diode conduct, and so the diode acts like an open switch.
VR = E – VD = 0.5 – 0.5 = 0 V
ID = IR = VD/ RD = VR/IR = 0V/ 1.2 k = 0 A
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EXAMPLE 7
Determine Vo and ID for the series circuit below:
12 V Vo
Si red R680
Color Construction
Typical Voltage
(V)
Amber AlInGaP 2.1
Blue GaN 5.0
Green GaP 2.2
Orange GaAsP 2.0
Red GaAsP 1.8
White GaN 4.1
Yellow AlinGaP 2.1
Note:Typical Forward Voltages for LEDs
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ANSWER
Red LED, Forward voltage = 1.8 V
12 – 0.7 -1.8 – 680IR = 0
ID = IR = (12–0.7 – 1.8)/680
= 13.97 mA
Vo = ID R = 9.500 V
or Vo = 12-0.7-1.8
= 9.500 V
12 V Vo
Si red R680
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EXAMPLE 8
Determine ID, VD2 and Vo for the circuit below:
EXAMPLE 8
Determine ID, VD2 and Vo for the circuit below
R5.6 k
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ANSWER
IR = 0, because the circuit is open at diode 2.
VD2 = 12 V
The KVL:
12 – 0 – 12 – Vo = 0
12 – 0 – 12 – (5.6k)IR = 0
Vo = 0V
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EXAMPLE 9
Determine I, V1, V2 and Vo for the series dc configuration below.
I
+ V1 -
+
V2
-
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ANSWER
10 – (4.7k)I – 0.7 – (2.2k)I –(-5) = 0
10 – (4.7k)I – 0.7 – (2.2k)I + 5 = 0
I = (10 – 0.7 + 5)/(4.7k + 2.2k)
I = 2.07 mA
V1= IR1= 9.73 V
V2 = IR2 = 4.55 V
Vo – V2 – E2 = 0
Vo = V2 + E2 = 4.55 – 5V = - 0.45 V
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PARALLEL CONFIGURATIONS
mA 142
mA 28
D2I
D1I
mA 28.33kΩ
V .7V 10
R
DVE
RI
V 9.3R
V
V 0.7O
VD2
VD1
V
V 0.7D
V
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EXAMPLE 10:
Determine the current I for the network below
R2.2 k
E1=20V E2=4V
I
Si
Si
D1
D2
![Page 29: Elex1_diode Applications (Part1)](https://reader034.fdocuments.net/reader034/viewer/2022051609/5476f578b4af9f791b8b4572/html5/thumbnails/29.jpg)
ANSWER:
Given:
-E1 +IR+VD1+E2 =0
I = (E1 - VD1 - E2)/R
I = 6.95 mA
D1
D2
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EXAMPLE 11
Determine the voltage Vo for the network below12 V
Vo
R2.2 kΩ
Si Ge
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ANSWER
Given:
-12 +VGE + Vo = 0
Vo = 12 -VGE = 12V – 0.3V
Vo = 11.7 V
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EXAMPLE 12
Determine the currents I1, I2 and ID2 for the network below:
R13.3 kΩ
R25.6 kΩ
I1
I2 ID2
E = 20V
Si
Si
D1
D2
![Page 33: Elex1_diode Applications (Part1)](https://reader034.fdocuments.net/reader034/viewer/2022051609/5476f578b4af9f791b8b4572/html5/thumbnails/33.jpg)
ANSWER:
Given
-E +VD1 +VD2 +I2R2 = 0 -E + VD1 + I1R1 + I2R2 = 0
I2 = (E -VD1 -VD2 )/= R2 I1 = (E - VD1 - I2R2)/R1
I2 = 3.321 mA I1 = 0.213 mA
I2 = ID2 + I1; ID2 = I2 – I1
ID2 = 3.108 mA
1
2
D1
D2
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END