ELEG 422/622

Electronic Materials Processing

Homework #1

View the following two videotapes that are on file in the library.

(You can get them at the Media Services desk in the lower level and

view them in one of their viewing rooms.)

VHS 2588

"At the Limits -Making the Microchip"

VHS2589

"Cleanroom Technology and

Procedures"

It shou1d take about an hour to view both tapes and up to 4 persons can

view at the same time.

Note:These two tapes are supplemental, intended for on-campus students only.(We do not have permission from the copyright holder to distribute themoff campus.) Equivalent material is covered in the lectures.

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ELEG 622 Electronic Materials Processing

Homework #2

1. Do problems # 7-4, 8-1, 8-8, and 9-5 from the Campbell text

2. What is the amount of penumbral blur in an x-ray lithography system in

which the source diameter is 3 mm, the mask to wafer distance is 40 microns

and the distance from the source to the wafer is 50 cm?

3.In the system of question #2 what is the lateral magnification error (run

out error) at a point on the wafer spaced a radial distance = 60 mm from

its center?

4. Do problems # 8-2, 8-5, 8-6, 8-8, 8-9

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Electronic Materials Processing ELEG622

Homework #5 Continued Ion Implantation Problems (Chapter #5 in the Campbell Text)

2. Do Problem 5-1 3. Do Problem 5-2 4. Do Problem 5-8

Electronic Materials Processing ELEG622

Homework #5 Continued Additional Oxide Growth Problems

(Use the equations of the Deal-Grove Model to solve these problems)

From the Campbell text, do Problems 4-1, 4-2, 4-4

ELEG 622Electronic Materials Processing

Homework Set # 6

1. A silicon wafer is dry-etched by Ar ion plasma sputtering. If the ion energy is 500 eV and 1017 Ar ions/cm2

strike the wafer each second, what thickness of Si is removed in a 10 minute etch?Hint! The atomic density of silicon is 5 x 1022 atoms/cm3

2. A Penning-type ion source produces a 2 mA beam of Ar+ ions when operated at an extraction voltage of 100 volts.

a) What must the extraction voltage be to increase beam current to 6 mA?

b) If the voltage is kept constant at 100 V but the distance between the extraction electrode and thecathode is reduced from its original magnitude of 100 micro :m, what must be the new spacing to produce acurrent of 6 mA?

3. A layer of polycrystalline silicon is grown from silane decomposition at a temperature of 580 oC and a deposition pressure of 200 mTorr for a time period of 1 hour. What is the thickness of the layer?

4. Do problem 13-3 from the Campbell text.

5. Do problem 15-9 from the Campbell text.

6. Do problem 12-3 from the Campbell text.

7. Do problem 12-4 from the Campbell text.

8. A GaAs-air interface has a bulk carrier concentration = 1x1017/cm2, a surface carrier concentration = 5x1016/cm3. If a surface recombination current density = 9.6 A/cm2 is measured, what is the surface recombination velocity?

ELEG622/422Homework #8

1. If a silicon rod of 1 mm diameter is exposed to a tensional force by supporting

a 3 g weight, a. What axial stress does the rod experience? b. What is the axial strain?

2. A square membrane of silicon, 7 mm on a side and 150 µm thick, is exposed uniformly over its surface to a pressure of 1 x 104 N/m2 . a. What is the deflection at the center point of the membrane? b. What is the maximum longitudinal stress? c. What is the maximum transverse stress? d. What is the resonant frequency of the membrane?

3. A silicon cantilever beam, 1.5 mm long, 500 µm wide and 250 µm thick, is loaded with a point load of 0.01N at the free end. a. What is the deflection at the point 0.5 mm from the free end? b. What is the maximum stress? c. What is the frequency of the fundamental vibrational mode?

4. A silicon torsion plate is supported by (silicon) beams that are 200 µm long, 100 µm wide and 100 µm thick. What is the restoring torque that is developed when the plate is rotated through an angle of 45 degrees?