EE210 Digital Electronics Class Lecture 9 April 08, 2009.

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EE210 Digital Electronics Class Lecture 9 April 08, 2009

Transcript of EE210 Digital Electronics Class Lecture 9 April 08, 2009.

Page 1: EE210 Digital Electronics Class Lecture 9 April 08, 2009.

EE210 Digital Electronics

Class Lecture 9

April 08, 2009

Page 2: EE210 Digital Electronics Class Lecture 9 April 08, 2009.

2

Digital CMOS Logic CircuitsDigital CMOS Logic Circuits

In This ClassIn This Class

We Will Discuss:

10.3 CMOS Logic-Gate Circuits

Page 3: EE210 Digital Electronics Class Lecture 9 April 08, 2009.

Chapter 10:Chapter 10: Digital CMOS Logic Digital CMOS Logic CircuitsCircuits

We will Start from

10.3 CMOS Logic-Gate Circuits

But First Home Work# 03…

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Home Work# 03…

For the circuit in Fig., consider the application of inputs of 5 V and 0.2 V to X and Y in any combination ,and find the output voltage for each combination .• Tabulate your results. How many input combinations are there? (4 Marks)•What happens when any input is high? (3 Marks)• What happens when both inputs are low? (3 Marks)

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10.3 CMOS Logic-Gate Circuits10.3 CMOS Logic-Gate Circuits• Using Inverter knowledge we consider

CMOS ckts that realize combinational-logic functions

• In combinational ckts output at any time is function only of the value of input signal at that time. Thus, these do not have memory.

• Combinational-logic circuits are used in large quantities in many applications. Indeed, every digital system contains large numbers of Combinational-logic circuits

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10.3.1 Basic Structure10.3.1 Basic Structure• CMOS logic ckt is

extension or generalization of the CMOS Inverter

• As we learned, CMOS inverter consists of NMOS pull-down transistor, and a PMOS pull-up transistor, operated by input voltage in complementary fashion

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10.3.1 Basic Structure10.3.1 Basic Structure

• CMOS Logic Gate has two Networks: Pull-Down Network (PDN) constructed of NMOS transistors and Pull-up Network (PUN) constructed of PMOS Transistors

• Two Networks are Operated by Input Variables, in Complementary fashion

Page 8: EE210 Digital Electronics Class Lecture 9 April 08, 2009.

10.3.1 Basic Structure10.3.1 Basic Structure

• When All Three input combinations are High PDNPDN will conduct and will Pull the output node down to Ground making Output Low (Y=0) (Voltage Zero)

• Simultaneously, PUN will be OFF and no path will Exists between VDD and Ground

Page 9: EE210 Digital Electronics Class Lecture 9 April 08, 2009.

10.3.1 Basic Structure10.3.1 Basic Structure

• When All Three input combinations are Low PUNPUN will conduct and will Pull the output node Up to VDD making Output High (Y=1) (Voltage = VDD )

• Simultaneously, PDN will be OFF and no path will Exists between VDD and Ground

Page 10: EE210 Digital Electronics Class Lecture 9 April 08, 2009.

10.3.1 Basic Structure10.3.1 Basic Structure• PDN and PUN each Utilize Devices in Parallel

to form an OR Function

PDN :

QA will conduct when A is

Hi and will Pull the Output

Down to ground (Y=0)

QB will conduct when B is Hi

and will Pull the Output

Down to ground (Y=0)

Thus Y=0, when A OR B is High

BAY BAY

Page 11: EE210 Digital Electronics Class Lecture 9 April 08, 2009.

10.3.1 Basic Structure10.3.1 Basic Structure• PDN and PUN each Utilize Devices in Parallel

to form an OR Function

PUN :

QA will conduct when A is

Lo and will Pull the Output

Up to VDD (Y=1)

QB will conduct when B is Lo

and will Pull the Output

Up to VDD (Y=1). Thus

Y=1 (Hi), when A OR B is LoBAY

Page 12: EE210 Digital Electronics Class Lecture 9 April 08, 2009.

10.3.1 Basic Structure10.3.1 Basic Structure

• PDN and PUN each Utilize Devices in Series to form an AND Function

PDN :

QA and QB will conduct ONLY when both A and B are Hi Simultaneously.Thus Y=0 (low), when A is High AND B is High

ABY ABY

Page 13: EE210 Digital Electronics Class Lecture 9 April 08, 2009.

10.3.1 Basic Structure10.3.1 Basic Structure

• PDN and PUN each Utilize Devices in Series to form an AND Function

PUN :

QA and QB will conduct

ONLY when both A and B

are Lo Simultaneously.

Thus Y=1 (High),

when A is High AND B is High

BAY

Page 14: EE210 Digital Electronics Class Lecture 9 April 08, 2009.

10.3.1 Basic Structure10.3.1 Basic Structure

PDN :

Y=0 (low),

when A is High OR when

A AND B are both High

BCAY

BCAY

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10.3.1 Basic Structure10.3.1 Basic Structure

PUN :

Y=1 (low),

when A is Lo OR when

A AND B are both Lo

CBAY

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10.3.1 Basic Structure10.3.1 Basic Structure

• After understanding structure and operation of PDNs and PUNs we will consider complete CMOS gates

• BUT Before that we need to introduce alternative ckt symbols which are almost universally used for MOS transistors by digital-ckt designers

Page 17: EE210 Digital Electronics Class Lecture 9 April 08, 2009.

10.3.1 Basic Structure10.3.1 Basic Structure

• Circle at Gate Terminal for PMOS indicate that the Signal at gate has to be low for it to be activated (conduct)

• These symbol omit indication of source and drain

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Basic Boolean IdentitiesFundamental Laws:

OR AND NOT (Inverter)

Associative Law: Commutative Law

0AA

AAA

AA1

0 A0

AA

0AA

1 AA

1AA

AAA

11A

A 0A

A(BC)(AB)C

C)(BA C B)(A

BAABAB BA

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Basic Boolean Identities

Distributive Law:

DeMorgan’s Law:

Auxiliary Identities:

......

...BA AB...

BABA

ACAB C) A(B

BCACABA

BAB

))((

AAA ABA

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PDN :

Y=0 (Low), when A OR B is High

PUN :

Y=1 (High),

when A is Low AND B is Low

BAY BAY

BAY

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10.3.2 Two Input NOR Gate10.3.2 Two Input NOR Gate

Combining both PDN and PUN realizes Complete CMOS NOR Gate with NOR Function

Input Output

A B Y

0 0 1

0 1 0

1 0 0

1 1 0

BABAY

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PDN :

Y=0 (low), when

A is High AND B is High

PUN : Y=1 (Hi), when A OR B is Lo

ABY ABY

BAY

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10.3.3 Two Input NAND Gate10.3.3 Two Input NAND Gate

Combining both PDN and PUN realizes Complete CMOS NAND Gate with NAND Function

Input Output

A B Y

0 0 1

0 1 1

1 0 1

1 1 0

BAABY

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10.3.4 A Complex Gate10.3.4 A Complex Gate

Consider More Complex Logic Function

Y should be Low for A High AND Simultaneously either B High

OR C AND D both High.

The PDN for this is.

To get PUN we need to

Express Y in terms of

Complemented variables

)( CDBAY )( CDBAY

Page 25: EE210 Digital Electronics Class Lecture 9 April 08, 2009.

10.3.4 A Complex Gate10.3.4 A Complex Gate

So we use DeMorgan’s Law

Thus, Y is High for A OR B Low AND either C OR D Low. Thus PUN for this is.

)(

)(

DCBA

CDBA

CDBA

CDBAY

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10.3.4 A Complex Gate10.3.4 A Complex Gate

Combining both PDN and PUN realizes Complete CMOS Complex Gate Function

)( CDBAY

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10.3.5 Obtaining PUN from PDN10.3.5 Obtaining PUN from PDN

• So far, we have seen that PDN and PUN are dual networks: A series branch exist in one and Parallel branch exist in other.

• Thus, we can obtain one from the other – a simple process than using Boolean expressions.

• For Complex Gate we found PDN relatively easy Y (bar) in terms of un-complemented inputs. We could obtain PUN using this duality method instead of Boolean Expression.

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10.3.5 Obtaining PUN from PDN10.3.5 Obtaining PUN from PDN

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10.3.5 Obtaining PUN from PDN10.3.5 Obtaining PUN from PDN

Complex Gate using duality of both PDN and PUN

)( CDBAY

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10.3.6 Exclusive OR Function (XOR)10.3.6 Exclusive OR Function (XOR)

• An important Function that is often used in logic design is the Exclusive-OR (XOR) function:

• Y instead of Y(bar) is given so we can synthesize PUN easily.

• Unfortunately Y is not function of complemented variables only, thus we will need additional inverters.

BABAY

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10.3.6 Exclusive OR Function (XOR)10.3.6 Exclusive OR Function (XOR)

PUN Obtained directly from:

Note that we have used two inverters to generate A(bar) and B(bar)

PDN can be synthesized from PUN using duality or developing the Y(bar) expression.

BABAY

Page 32: EE210 Digital Electronics Class Lecture 9 April 08, 2009.

10.3.6 Exclusive OR Function (XOR)10.3.6 Exclusive OR Function (XOR)

First: PDN from PUN using duality

Second: develop the Y(bar) expression using DeMorgan Law on

Gives

BABAY

BAABY

Page 33: EE210 Digital Electronics Class Lecture 9 April 08, 2009.

10.3.6 Exclusive OR Function (XOR)10.3.6 Exclusive OR Function (XOR)

So the complete XOR using PUN and PDN

Note that we have used two inverters to generate A(bar) and B(bar) which are not shown.XOR requires 12 transistors

BABAY

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10.3.7 Synthesis Method Summary10.3.7 Synthesis Method Summary

• To synthesize PDN we need Y(bar) expression in terms of uncomplemented variables. If complemented variables appear in expression we need inverters.

• To synthesize PUN we need Y expression in terms of complemented variables and then apply uncomplemented variables to the gates of PMOS transistors. If uncomplemented variables appear in expression we need inverters.

• PDN can be obtained from PUN (and vice versa) using duality

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In Next Class

We Will Continue to Discuss:

CMOS Logic Gates