EE 247B/ME 218: Introduction to MEMS Design CTN...

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1 EE 247B/ME 218 : Introduction to MEMS Design Lecture 12m1 : Mechanics of Materials CTN 2/25/16 Copyright © 2016 Regents of the University of California EE C245 : Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 28 Quality Factor (or Q) EE C245 : Introduction to MEMS Design LecM 29 L r h W r V P v i Clamped-Clamped Beam Resonator Smaller mass higher freq. range and lower series R x (e.g., m r = 10 -13 kg) Young’s Modulus Density Mass Stiffness i v o i 2 03 . 1 2 1 r r r o L h E m k f Frequency : Q ~10,000 v i Resonator Beam Electrode V P C(t) dt dC V i P o Note : If V P = 0V device off i o EE C245 : Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 30 Quality Factor (or Q) Measure of the frequency selectivity of a tuned circuit Definition : Example : series LCR circuit Example : parallel LCR circuit dB 3 Cycle Per Lost Energy Cycle Per Energy Total BW f Q o CR R L Z Z Q o o 1 Re Im LG G C Y Y Q o o 1 Re Im BW -3dB f o f EE C245 : Introduction to MEMS Design LecM 7 Selective Low-Loss Filters: Need Q In resonator-based filters: high tank Q low insertion loss At right : a 0.1% bandwidth, 3- res filter @ 1 GHz (simulated) heavy insertion loss for resonator Q < 10,000 -40 -35 -30 -25 -20 -15 -10 -5 0 998 999 1000 1001 1002 Frequency [MHz] Transmission [dB] Tank Q 30,000 20,000 10,000 5,000 4,000 Increasing Insertion Loss

Transcript of EE 247B/ME 218: Introduction to MEMS Design CTN...

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EE 247B/ME 218: Introduction to MEMS DesignLecture 12m1: Mechanics of Materials

CTN 2/25/16

Copyright © 2016 Regents of the University of California

EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 28

Quality Factor (or Q)

EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 29

Lr hWr

VPvi

Clamped-Clamped Beam Resonator

Smaller mass higher freq. range and lower series Rx

Smaller mass higher freq. range and lower series Rx(e.g., mr = 10-13 kg)(e.g., mr = 10-13 kg)

Young’s Modulus

Density

Mass

Stiffness

ivoi

203.1

2

1

rr

ro

L

hE

m

kf

Frequency:

Q ~10,000

vi

Resonator Beam

Electrode

VP

C(t)

dt

dCVi Po

Note: If VP = 0V device off

Note: If VP = 0V device off

io

EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 30

Quality Factor (or Q)

•Measure of the frequency selectivity of a tuned circuit

• Definition:

• Example: series LCR circuit

• Example: parallel LCR circuit

dB3CyclePer Lost Energy

CyclePer Energy Total

BW

fQ o

CRR

L

Z

ZQ

o

o

1

Re

Im

LGG

C

Y

YQ

o

o

1

Re

Im

BW-3dB

fo f

EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 31

Selective Low-Loss Filters: Need Q

• In resonator-based filters: high tank Q low insertion loss

• At right: a 0.1% bandwidth, 3-res filter @ 1 GHz (simulated)

heavy insertion loss for resonator Q < 10,000 -40

-35

-30

-25

-20

-15

-10

-5

0

998 999 1000 1001 1002

Frequency [MHz]

Tra

nsm

issi

on

[d

B]

Tank Q30,00020,00010,0005,0004,000

Increasing Insertion

Loss

2

EE 247B/ME 218: Introduction to MEMS DesignLecture 12m1: Mechanics of Materials

CTN 2/25/16

Copyright © 2016 Regents of the University of California

EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 32

•Main Function: provide a stable output frequency

• Difficulty: superposed noise degrades frequency stability

ivoi

A

Frequency-SelectiveTank

SustainingAmplifier

ov

Ideal Sinusoid:

tofVotov 2sin

Real Sinusoid:

ttoftVotov 2sin

=2/TO

TO

Zero-Crossing Point

Tighter SpectrumTighter Spectrum

Oscillator: Need for High Q

Higher QHigher Q

EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 33

• Problem: IC’s cannot achieve Q’s in the thousandstransistors consume too much power to get Qon-chip spiral inductors Q’s no higher than ~10off-chip inductors Q’s in the range of 100’s

•Observation: vibrating mechanical resonances Q > 1,000

• Example: quartz crystal resonators (e.g., in wristwatches)extremely high Q’s ~ 10,000 or higher (Q ~ 106 possible)mechanically vibrates at a distinct frequency in a

thickness-shear mode

Attaining High Q

EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 34

Energy Dissipation and Resonator Q

supportviscousTEDdefects QQQQQ

11111

Anchor LossesAnchor Losses

Material Defect Losses

Material Defect Losses Gas DampingGas Damping

Thermoelastic Damping (TED)Thermoelastic Damping (TED)

Bending CC-Beam

Compression Hot Spot

Tension Cold Spot Heat Flux(TED Loss)

Elastic Wave Radiation(Anchor Loss)

At high frequency, this is our big problem!

At high frequency, this is our big problem!

EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 35

Thermoelastic Damping (TED)

•Occurs when heat moves from compressed parts to tensioned parts heat flux = energy loss

QfT

2

1)()(

pC

TET

4)(

2

222)(

ff

fff

TED

TEDo

22 hC

Kf

pTED

Bending CC-Beam

Compression Hot Spot

Tension Cold Spot Heat Flux(TED Loss)

= thermoelastic damping factor = thermal expansion coefficientT = beam temperatureE = elastic modulus = material densityCp = heat capacity at const. pressureK = thermal conductivityf = beam frequencyh = beam thicknessfTED = characteristic TED frequency

h

3

EE 247B/ME 218: Introduction to MEMS DesignLecture 12m1: Mechanics of Materials

CTN 2/25/16

Copyright © 2016 Regents of the University of California

EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 36

TED Characteristic Frequency

• Governed byResonator dimensionsMaterial properties

22 hC

Kf

pTED

= material densityCp = heat capacity at const. pressureK = thermal conductivityh = beam thicknessfTED = characteristic TED frequency

Critical Damping F

acto

r,

Relative Frequency, f/fTED

Q

[from Roszhart, Hilton Head 1990]

Peak where Q is minimizedPeak where Q is minimized

EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 37

Q vs. Temperature

Quartz Crystal Aluminum Vibrating Resonator

Q ~5,000,000 at 30K

Q ~5,000,000 at 30K

Q ~300,000,000 at 4KQ ~300,000,000 at 4K

Q ~500,000 at 30K

Q ~500,000 at 30K

Q ~1,250,000 at 4KQ ~1,250,000 at 4K

Even aluminum achieves exceptional Q’s at

cryogenic temperatures

Even aluminum achieves exceptional Q’s at

cryogenic temperatures

Mechanism for Q increase with decreasing temperature thought to be linked to less hysteretic motion of material defects

less energy loss per cycle

Mechanism for Q increase with decreasing temperature thought to be linked to less hysteretic motion of material defects

less energy loss per cycle

[from Braginsky, Systems With

Small Dissipation]

EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 38

Output

Input

Input

Output

Support Beams

Wine Glass Disk Resonator

R = 32 m

Anchor

Anchor

Resonator Data

R = 32 m, h = 3 m

d = 80 nm, Vp = 3 V

Resonator Data

R = 32 m, h = 3 m

d = 80 nm, Vp = 3 V

-100

-80

-60

-40

61.325 61.375 61.425

fo = 61.37 MHzQ = 145,780

Frequency [MHz]

Un

matc

hed

Tra

nsm

issio

n [

dB

]

Polysilicon Wine-Glass Disk Resonator

[Y.-W. Lin, Nguyen, JSSC Dec. 04]

Compound Mode (2,1)

EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 39

-100

-98

-96

-94

-92

-90

-88

-86

-84

1507.4 1507.6 1507.8 1508 1508.2

1.51-GHz, Q=11,555 NanocrystallineDiamond Disk Mechanical Resonator

• Impedance-mismatched stem for reduced anchor dissipation

•Operated in the 2nd radial-contour mode

•Q ~11,555 (vacuum); Q ~10,100 (air)

• Below: 20 m diameter disk

PolysiliconElectrode R

Polysilicon Stem(Impedance Mismatched

to Diamond Disk)

GroundPlane

CVD DiamondMechanical Disk

Resonator Frequency [MHz]

Mix

ed

Am

plitu

de [

dB

]

Design/Performance:

R=10m, t=2.2m, d=800Å, VP=7Vfo=1.51 GHz (2nd mode), Q=11,555

fo = 1.51 GHzQ = 11,555 (vac)Q = 10,100 (air)

[Wang, Butler, Nguyen MEMS’04]

Q = 10,100 (air)

4

EE 247B/ME 218: Introduction to MEMS DesignLecture 12m1: Mechanics of Materials

CTN 2/25/16

Copyright © 2016 Regents of the University of California

EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 40

Disk Resonator Loss Mechanisms

Disk Stem

Nodal Axis

Strain Energy Flow No motion along

the nodal axis, but motion along the finite width

of the stem

No motion along the nodal axis,

but motion along the finite width

of the stem

Stem Height/4 helps

reduce loss, but not perfect

/4 helps reduce loss,

but not perfect

Substrate Loss Thru Anchors

Substrate Loss Thru Anchors

Gas Damping

Gas Damping

Substrate

Hysteretic Motion of

Defect

Hysteretic Motion of

Defect

e-

Electronic Carrier Drift Loss

Electronic Carrier Drift Loss

(Not Dominant in Vacuum)

(Dwarfed By Substrate Loss)

(Dwarfed By Substrate Loss)

(Dominates)

EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 41

MEMS Material Property Test Structures

EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 42

Stress Measurement Via Wafer Curvature

• Compressively stressed film bends a wafer into a convex shape

• Tensile stressed film bends a wafer into a concave shape

• Can optically measure the deflection of the wafer before and after the film is deposited

• Determine the radius of curvature R, then apply:

Rt

hE

6

2

= film stress [Pa]E′ = E/(1-) = biaxial elastic modulus [Pa]h = substrate thickness [m]t = film thicknessR = substrate radius of curvature [m]

Si-substrate

Laser

Detector

Mirror

xScan the mirror

x

Slope = 1/R

h

t

R

EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 43

MEMS Stress Test Structure

• Simple Approach: use a clamped-clamped beamCompressive stress causes

bucklingArrays with increasing length

are used to determine the critical buckling load, where

Limitation: Only compressive stress is measurable

2

22

3 L

Ehcritical

E = Young’s modulus [Pa]I = (1/12)Wh3 = moment of inertiaL, W, h indicated in the figure

L

W

h = thickness

5

EE 247B/ME 218: Introduction to MEMS DesignLecture 12m1: Mechanics of Materials

CTN 2/25/16

Copyright © 2016 Regents of the University of California

EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 44

More Effective Stress Diagnostic

• Single structure measures both compressive and tensile stress

• Expansion or contraction of test beam deflection of pointer

• Vernier movement indicates type and magnitude of stress

Expansion Compression

Contraction Tensile

EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 45

Output

Input

Input

Output

Support Beams

Wine Glass Disk Resonator

R = 32 m

Anchor

Anchor

Resonator Data

R = 32 m, h = 3 m

d = 80 nm, Vp = 3 V

Resonator Data

R = 32 m, h = 3 m

d = 80 nm, Vp = 3 V

-100

-80

-60

-40

61.325 61.375 61.425

fo = 61.37 MHzQ = 145,780

Frequency [MHz]

Un

matc

hed

Tra

nsm

issio

n [

dB

]

Q Measurement Using Resonators

[Y.-W. Lin, Nguyen, JSSC Dec. 04]

Compound Mode (2,1)

EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 46

Folded-Beam Comb-Drive Resonator

• Issue w/ Wine-Glass Resonator: non-standard fab process

• Solution: use a folded-beam comb-drive resonator

8.3 Hz

3.8

500,342Q

fo=342.5kHzQ=41,000

EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 47

Comb-Drive Resonator in Action

• Below: fully integrated micromechanical resonator oscillator using a MEMS-last integration approach

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EE 247B/ME 218: Introduction to MEMS DesignLecture 12m1: Mechanics of Materials

CTN 2/25/16

Copyright © 2016 Regents of the University of California

EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 48

Folded-Beam Comb-Drive Resonator

• Issue w/ Wine-Glass Resonator: non-standard fab process

• Solution: use a folded-beam comb-drive resonator

8.3 Hz

3.8

500,342Q

fo=342.5kHzQ=41,000

EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 49

Measurement of Young’s Modulus

• Use micromechanical resonatorsResonance frequency depends on EFor a folded-beam resonator: 21

3)(4

eqo

M

LWEhfResonance Frequency =

L

W

h = thickness

Young’s modulus

Equivalent mass

• Extract E from measured frequency fo

•Measure fo for several resonators with varying dimensions

• Use multiple data points to remove uncertainty in some parameters

EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 50

Anisotropic Materials

EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 51

Elastic Constants in Crystalline Materials

• Get different elastic constants in different crystallographic directions 81 of them in allCubic symmetries make 60 of these terms zero, leaving

21 of them remaining that need be accounted for

• Thus, describe stress-strain relations using a 6x6 matrix

xy

zx

yz

z

y

x

xy

zx

yz

z

y

x

CCCCCC

CCCCCC

CCCCCC

CCCCCC

CCCCCC

CCCCCC

665646362616

565545352515

464544342414

363534332313

262524232212

161514131211

Stiffness CoefficientsStresses Strains

7

EE 247B/ME 218: Introduction to MEMS DesignLecture 12m1: Mechanics of Materials

CTN 2/25/16

Copyright © 2016 Regents of the University of California

EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 52

Stiffness Coefficients of Silicon

• Due to symmetry, only a few of the 21 coefficients are non-zero

•With cubic symmetry, silicon has only 3 independent components, and its stiffness matrix can be written as:

xy

zx

yz

z

y

x

xy

zx

yz

z

y

x

C

C

C

CCC

CCC

CCC

66

55

44

332313

232212

131211

00000

00000

00000

000

000

000

whereC11 = 165.7 GPaC12 = 63.9 GPaC44 = 79.6 GPa

EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 53

Young’s Modulus in the (001) Plane

[units = 100 GPa]

[units

= 1

00 G

Pa]

EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 54

Poisson Ratio in (001) Plane

EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 55

Anisotropic Design Implications

• Young’s modulus and Poisson ratio variations in anisotropic materials can pose problems in the design of certain structures

• E.g., disk or ring resonators, which rely on isotropic properties in the radial directionsOkay to ignore variation in RF

resonators, although some Q hit is probably being taken

• E.g., ring vibratory rate gyroscopesMode matching is required,

where frequencies along different axes of a ring must be the same

Not okay to ignore anisotropic variations, here Ring Gyroscope

Drive AxisDrive Axis

Sense

Axis

Sense

Axis

Wine-Glass Mode Disk