Dr. Robert P. Meagley Intel’s Researcher in Residence Lawrence Berkeley National Laboratory
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Beyond PFOS- Preorganized Lithographic Materials at Intel’s
Molecules for Advanced Patterning Program
Dr. Robert P. MeagleyIntel’s Researcher in Residence Lawrence Berkeley National Laboratory
MAPPMAPPhttp://www.intel.com/technology/techresearch/people/bios/meagley_r.htm
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Outline
•Why MAPP?
•Why deploy at the Molecular Foundry?
• What do we do here?
• 1st 18months: Conclusions
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Lithography
Meagley, Robert P., “Sub 30nm Photoresist Design Considerations: Molecular Nanotechnology”, Future Fab International, 21, 2006
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Nearly two billion transistors “Montecito”193nm litho into 32nm node then EUV
Intel Lithography Roadmap
SA Challenges:SA Challenges:•RoughnessRoughness•ResolutionResolution•DefectsDefects
MolecularMolecularDefectsDefects
MolecularMolecularCDsCDs
EWH35nm
DUV
EUV
65nm Node
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Accelerate discovery in nano-lithography
IntelIntel
National Lab
SupplierUniversity
“Technology Tetrahedron”
Molecules for Advanced Patterning
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• Capabilities– Metrology (Foundry, NCEM)
• Chemical: LC/MS, MALDI, NMR• Surface: elipsometry, SEM, CFM
– Lithography (ALS, Foundry, UCB)• 248nm, e-beam UCB Microlab• EUV MET, Nanowriter
– Synthesis (Foundry)• Prototyping in <10g lots• 4 Fume hoods & drybox in two 500 sq. ft. labs
• People– Intel Components Research Sr. Staff Scientist – 3 Post-docs one position now open (LBNL)– Contractors, assistants & visitors
• Collaborations: NIST, UWI & tech transfer
Program Structure
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500nm
Photoresist Structures
AFM reveals high levels of organization
Intrinsic ordering impacts imageSeveral levels 50 10 nmEmpirically engineered for HVM
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H+ Polymer (i) Polymer (s) PAG H+ B- + H+ HB
Base
AcidPixel Micelle/Dendrimer Oligomer Film• Catalysis fast within pixel, slow outside• Higher Eact PGs/ Higher pKa acids• Self-assembly disruption adds contrast• Diffusion control beyond PFOSPFOS
Benefits of Preorganization
Greener chemistry, enhanced performance
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Some Prototypes
Class Types Result
APPAGLong & Short Diffusion helps
DOF & profile248nm, 193, EUV, e-
beam
Scissionable Steroidal
Dendrimer
Scissionable Host for PAG Guest
6 kinds of G0 madeG1 made in June
G0 gave <5mJ/cm**2 EUV working on
increased temperature resistance
Scissionable Quencher Backbone
Preorganized quencher directs acid to protection
6 copolymers
10mJ/cm**2 EUV working on increased
temperature resistance
Nano-composite C, Si filler
Diamond nano-powder needs better dispersion
Advanced Developer proprietary
Fast photospeed, low PEB, short diffusion,
large margin
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APPAG
• Adhesion Promoting Photo Acid Generator
• Pre-organizes catalyst boost signal/noise
• Siloxane with pendant active species
• Ultra thin films and SAMs
• Building block for more complex structures
• Pre-organiz e cata lyst & s witch for k inetic a dvantage
• Bas e loca lizes c atalys t for pixel discrimination
Moiety placement guides proton trajectory
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Corrected profile
Sloped profile
H+H+
H+
H+
H+
H+H+H+
H+H+
H+
H+
H+H+
APPAG Chemistry
Monomer MALDI- TOF
• Tuned diffusion for CD contol• Tuned thickness with Mw control• Surface-seeking PAG• Faster photospeed
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Control: square at zero focus but footed out of the focus
APPAG: Square profile retained at zero and out of focus
36 mj/cm2, 0 micron focus 40mj/cm2, 0.8 micron focus
1st APPAG Print Test
Commercial resist applied over an underlayerThe control is a commercial BARC
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-1.5 -0.9 -0.26 +0.38 +1Defocus,
300
238
175
115
50
CD, nm
defocus 0
APPAG9
APPAG6
Control
-1.5 -0.9 -0.26 +0.38 +1Defocus,
300
238
175
115
50
CD, nm
defocus 0
APPAG9
APPAG6
Control
36mJ/cm2
250nm mask
Triflate improved DUV depth of focus
Bossung plots (DUV exposure)
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Scissionable Quencher Backbone
• Quencher integration in the polymer backbone
• Pre-organize catalyst & switch for kinetic advantage
• Base localizes catalyst for pixel discrimination
• Pre-organiz e cata lyst & s witch for k inetic a dvantage
• Bas e loca lizes c atalys t for pixel discrimination
Moiety placement guides proton trajectory
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SQB 1st Prototype
Flexible linker
EUV Dose mJ/cm2
Geometric Acceleration: “Spatio-temporal Effect”
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Rigid SQB Prototype
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Scissionable Steroidal Dendrimer
Moiety placement guides proton trajectory
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Morphology from Casting Solvent
Scissionable Steroidal Dendrimer
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G1 Dendron & Hyperbranching
OH
CH3
O
OH
CH3CH3
OH
Swern
O
CH3
O
OH
CH3CH3
O
TFAAO
CH3
O
R
CH3CH3
O
R= O(O)CCF3
I
1) MeLi2) I
O
CH3
O
O
CH3CH3
O
O
CH3
O CH3CH3
O
CH3
O
OH
CH3CH3
CH3
O
CH3
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G1 Dendrimer
extended conformation
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18th Month Conclusions
• MAPP in Molecular Foundry “Jumpstart”– 6 months from empty room to 1st prototype – 4 designs and 18 prototypes in 1st year
• Diffusion control through preorganization– APPAG steers proton with interface – SBQ steers proton with base– SDR Steers proton with polarity
• Future materials needed– Pattern anticipation– Dimensional decoupling (Z from X-Y, X from Y)
Diffusion control to eliminate PFOS
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Acknowledgements
• Intel: Dr. Mike Mayberry, Melissa Shell, Dr. Michael Leeson, Dr. Heidi Cao, Dr. Adam Schafer, Dr. Wang Yueh, Vani Thirumala
• Molecular Foundry: Dr. Eduardo Saiz, Dr. Geeta Sharma, Dr. Shalini Sharma, Ankur Gupta, Kate Goodin, Michael Rattner, Igor Tregub
• NCEM: Doreen Ah Tye & DOE* • ALS: Brian Hoef and Paul Denham• UCB Microlab team• UWI: Prof. Paul Nealey, Prof. Padma Gopalan, Dr.
Insik In, Young-Hye Na • Thank you for your attention!
•# DE-AC02-05CH11231
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Backup
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APPAG Mass Spectroscopy
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DOE in synthesis: ES MS of APPAG intermediate
• Initial results inconsistent
• DOE revealed “cliff” at 120 degrees
RT 120 1h 120 2h
140 1h 160 1h 140 1h APPAG6
• Low level light exclusion key in 2nd step
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SBQ Mass Spectroscopy
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2006 Publications/Presentations
• R. Meagley, S. Sharma, G. Sharma, K. Goodin, M. Rattner, “Smart Interfaces: improving pattern fidelity with the gain enhancing underlayers, APPAG”, J. Macromolecular Sci., 45(6), 2006 (invited paper, in Press)
• R. Meagley “Sub 30nm photoresist design” Future fab International, Issue 26, June 2006 (invited paper)
http://www.future-fab.com/documents.asp?d_ID=4005• G. Sharma, S. Sharma, R. Meagley “Preorganization in
Photoresist Architecture” 12th Wintertur Symposium on Polymers for Microelectronics May 3, 2006 (invited talk)
• J.M. Roberts, R. Meagley, T.H. Fedynyshyn, R.F. Sinta, D.K. Astolfi, R.B. Goodman, and A. Cabral, Proc. SPIE 6153 (2006).
• T.H. Fedynyshyn, R.F. Sinta, D.K. Astolfi, A. Cabral, J.M. Roberts, and R. Meagley, Proc. SPIE 6153 (2006).