Don’t Forget the Memory…
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Don’t Forget the Memory…Dean Klein, VP Memory System DevelopmentMicron Technology, Inc.
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©2007 Micron Technology, Inc. All rights reserved.
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Memory is Everywhere
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One size DOES NOT fit all…
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Question:
• How many different memories does your computer use?
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The Evolving Memory Hierarchy
Level 1 Cache
Level 2 Cache
Main Memory
Disk Boot ROM
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Question:
• How many different memories does your cell phone use?
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The Cell Phone Memory Hierarchy
Instruction Cache
Data Cache
Boot ROM
uSD Card NAND
NAND Flash
PSRAM or LPDRAM
MCP
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What is the Ideal Memory?
• Fast – to keep pace with processors• Reliable – not susceptible to corruption• Low cost – pennies per mm2
• Small – helps with low cost, but also for new platforms
• Embeddable – ability to be integrated with logic
• Low power – for dense systems and un-tethered systems
• Non-volatile – no power required to retain data
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Industry Reported Cell SizesCell Size (u2) Tech Node (nm) Cell size (F2) Endurance
IBM/Infineon MRAM0.74 130 44 Excellent
Freescale 6T-SRAM0.69 65 163 Excellent
Intel 45nm 6T-SRAM0.27 45 135 Excellent
Freescale TFS: Nanocrystaline0.13 90 16 Unknown
Freescale eDRAM0.12 65 28 Excellent
Samsung 512Mbit PRAM Device0.050 95 5.5 1E7??
Micron 40-series DRAM0.037 78 6 Excellent
Micron 60-series NAND0.0046 34 4 Good
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Benefit of Shrinking
• The ability to fit more bits on a wafer, thereby reducing the cost of those bits.
• The ability to add features to a product, thereby increasing performance.
• The ability to lower the power of the device.
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DRAM Operation
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NAND Flash Memory
• The “ideal” memory?• Non-volatile• Small cells – Under 6F2
• Low cost process• Scaleable?• Wear issues?• Slow writes• Ideal for some applications
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NAND Operation
• Control Gate traps electrons injected by Fowler-Nordheim tunneling.
• Voltages of up to 20V exist during cell programming. p-sub
N-well
p-wellN+ N+
Source Drain
ControlGate
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NAND Programming Operation
• Control Gate traps electrons injected by Fowler-Nordheim tunneling.
• Voltages of up to 20V exist during cell programming. p-sub
N-well
p-wellN+ N+
SourceOpen
Drain0V
ControlGate20V
0V0V0V
Cell is programmed to “0”
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NAND Storage Operation
• Control Gate traps electrons injected by Fowler-Nordheim tunneling.
• Voltages of up to 20V exist during cell programming. p-sub
N-well
p-wellN+ N+
Source Drain
ControlGate
Cell retains its “0” state
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NAND Read Operation
• Control Gate traps electrons injected by Fowler-Nordheim tunneling.
• Voltages of up to 20V exist during cell programming. p-sub
N-well
p-wellN+ N+
SourceReads
0V
Drain4.5V
ControlGate
0V
0V0V0V
Cell read in “0” state
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NAND Read Operation
• Control Gate traps electrons injected by Fowler-Nordheim tunneling.
• Voltages of up to 20V exist during cell programming. p-sub
N-well
p-wellN+ N+
SourceReads >0V
Drain4.5V
ControlGate
0V
0V0V0V
Cell read in “1” state
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Questions:
• In 1982, as the personal computer became successful, how many memory bits were there in a standard memory chip?
• In 2010 how many memory bits are in a leading edge standard NAND Flash memory chip?
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Questions:
1. How fast is the speed of light?
2. How far can light travel in the single “tick” of a 3GHz processor clock?
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Question:
• How many ticks of the 3GHz processor clock does it take to access the average piece of data on a 7200RPM hard drive?
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Why SSD’s?
• Performance
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SSDs in Computing
1 L1 Cache 1,800
2.5 L2 Cache 1,400
1,200 DRAM 10
RelativeLatency
RelativeCost/bit
CPU
NAND Flash Closes the Latency GapCost/bit Data as of November 2007
25,000,000 HDD 1NAND 25,000 SSD 3
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Why SSD’s?
• Performance• Power
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Notebooks: SSD’s Can Improve Battery Life
Power consumption decreases when solid state drives are used in today’s notebook computers.
HDD SSD
Power
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SSD: Power and Performance
SSDs do more with less power
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Why SSD’s?
• Performance• Power• Reliability
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HDD & SSD in the Enterprise Server Market
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Why SSD’s?
• Performance• Power• Reliability• New Form Factors
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Innovative Platforms
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Memory Research Areas
• DRAM: New materials, High-K gates, Low-K dielectrics New structures: 3D transistors, lattices New features: Ultra-high bandwidth, lower power
• New types: MRAM FeRAM Polymer Programmable conductor Phase Change memory ‘Nano’ (?) Micromechanical/nano (Millipede)
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Top 10 Reasons You Want to Be an Engineer
1. For the great memories!2. It rationalizes why you always took things apart as a
kid3. You always were fascinated by trains4. It sure beats flippin’ burgers!5. You love calculus, differential equations, numerical
analysis…6. At least your computer listens to you7. You would have been a doctor or a lawyer, but
where’s the challenge?8. You believe anything is possible9. You’re going to get rich off that cold fusion project
you have going in your bathtub10.It’s logical
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Final Advice:
Be a “T” person!
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Questions?
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