DOMINANT TM Opto Technologies Mini DomiLEDTM Innovating …€¦ · InGaN : DNZP-DJG-I1 About Us...
Transcript of DOMINANT TM Opto Technologies Mini DomiLEDTM Innovating …€¦ · InGaN : DNZP-DJG-I1 About Us...
21/04/2014 V2.01
Features:> High brightness surface mount LED.> Based on InGaN technology.> 120° viewing angle.> Small package outline (LxWxH) of 2.0 x 1.4 x 1.3mm.> Qualified according to JEDEC moisture sensitivity Level 2.> Compatible to both IR reflow soldering.> Environmental friendly; RoHS compliance.
Mini DomiLEDTM
With the intense colors that seem to glow with energy and its significant brightness, Mini DomiLEDTM white LED is a highly reliable design device. Its dynamic nature makes it perfect choice for lighthing applications, office and home applications and standard industrial applications.
DATA SHEET:
Mini DomiLEDTM
InGaN : DNZP-DJG-I1
© 2005 DomiLED is a trademark of DOMINANT Opto Technologies.All rights reserved. Product specifications are subject to change without notice.
Applications:> Automotive: interior applications, eg: switches, telematics, climate control system, dashboard, etc.> Communication: indicator and backlight in mobilephone.> Display: full color display video notice board.> Industry: white goods (eg: Oven, microwave, etc.).
DOMINANTOpto TechnologiesInnovating Illumination
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InGaN : DNZP-DJG-I1
Part OrderingNumber
Color ViewingAngle˚
Luminous Intensity @ IF = 10mA IV (mcd)
NOTE1. All part number above comes in a quantity of 3000 units per reel.2. Other luminous intensity groups are also available upon request.3. Luminous intensity is measured with an accuracy of ± 11%.4. Color binning is carried for all units as per the color binning table. Only one color group is allowed for each reel.
DNZP-DJG-RS1-1-I1 InGaN Pure Green 120 112.5
Electrical Characteristics at Tj=250CVf @ If = 10 mA
3.0
Forward Voltage, Vf is measured with an accuracy of ± 0.1 V.
Part NumberMin. (V) Typ. (V) Max. (V)
DNZP-DJG 2.7 3.5
Optical Characteristics at Tj=250C
Min. Typ. Max.
180.0 224.0
Unit
Absolute Maximum RatingsMaximum Value
DC forward current
Peak pulse current; (tp ≤ 10µs, Duty cycle = 0.005)
Reverse voltage
ESD threshold (HBM)
LED junction temperature
Operating temperature
Storage temperature
Power dissipation (at room temperature)
Thermal resistance- Junction / ambient, Rth JA- Junction / solder point, Rth JS(Mounting on FR4 PCB, pad size >= 5 mm2 per pad)
20
100
5
2000
110
-40 … +100
-40 … +100
70
530280
mA
mA
V
V
˚C
˚C
˚C
mW
K/WK/W
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Vr @ Ir = 10 µA
5.0
Min. (V)
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CharacteristicsSymbol Part Number Value Unit
Temperature coefficient of VF (typ)IF = 10mA; 0 ˚C <= T <= 100 ˚C
Temperature coefficient of IV (typ)IF = 10mA; 0 ˚C <= T <= 100 ˚C
Temperature coefficient of Cx (typ)IF = 10mA; 0 ˚C <= T <= 100 ˚C
Temperature coefficient of Cy (typ)IF = 10mA; 0 ˚C <= T <= 100 ˚C
TCV
TCIV
TCCx
TCCy
DNZP-DJG
DNZP-DJG
DNZP-DJG
DNZP-DJG
-2.0
-0.28
0.00002
-0.00003
mV / K
% / K
Cx / K
Cy / K
0.500
0.550
0.600
0.650
0.700
0.300 0.350 0.400 0.450
A
B
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DNZP, White Color Grouping
Bin
A
B
0.35170.64520.37310.6245
Cx Cy Cx Cy
0.34890.59830.36710.5804
0.36710.58040.38510.5620
0.37310.62450.39450.6036
Dominant White Bin Structure
Chromaticity coordinate groups are measured with an accuracy of ± 0.01.
1 2 3 4
Dominant color coordinate is measured with an accuracy of ± 0.01.
R1R2S1
112.50 ... 140.00140.00 ... 180.00180.00 ... 224.00
Brightness Group Luminous Intensity IV (mcd)
Luminous Intensity Group at Tj=25˚C
Luminous intensity is measured with an accuracy of ± 11%.
InGaN : DNZP-DJG-I1DOMINANTOpto TechnologiesInnovating Illumination
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Relative Luminous Intensity Vs Forward Current
Forward Current, mA
Rel
ativ
e In
tens
ity
0 10 20 30 40 50
0
0.4
0.8
1.2
1.6
2
2.4
Forward Current Vs Forward Voltage
Forward Voltage, V
Forw
ard
Cur
rent
, mA
2 2.5 3 3.5 4
0
10
20
30
40
50
Maximum Current Vs Ambient Temperature
Ambient temperature
Forw
ard
Cur
rent
, If
0 10 20 30 40 50 60 70 80 90 100
5
10
15
20
25
Relative Intensity Vs. Wavelength
Wavelength, nm
Rel
ativ
e In
tens
ity
400 450 500 550 600 650 700 750 800
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
Radiation Pattern
0.270°
90°
80°
0
60°
50°
40°
30° 20°
0.6
0.4
1.0
0.8
10° 0°
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Relative Intensity Vs Forward Current
Forward Current; mA
Rel
ativ
e In
tens
ity; N
orm
aliz
ed a
t 5m
A
0 10 20 30 40 50
0
1
2
3
4
5
6
7
8
Forward Current Vs Forward Voltage
Forward Voltage; V
Forw
ard
Cur
rent
; mA
2 2.5 3 3.5 4
0
10
20
30
40
50
Maximum Current Vs Ambient Temperature
Ambient Temperature
Forw
ard
Cur
rent
; mA
0 10 20 30 40 50 60 70 80 90 100
5
10
15
20
25
Relative Intensity Vs Wavelength
Wavelength; nm
Rel
ativ
e In
tens
ity
400 450 500 550 600 650 700 750 800
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
Relative Luminous Intensity Vs Forward Current
Forward Current, mA
Rel
ativ
e In
tens
ity
0 10 20 30 40 50
0
0.4
0.8
1.2
1.6
2
2.4
Forward Current Vs Forward Voltage
Forward Voltage, V
Forw
ard
Cur
rent
, mA
2 2.5 3 3.5 4
0
10
20
30
40
50
Maximum Current Vs Ambient Temperature
Ambient temperature
Forw
ard
Cur
rent
, If
0 10 20 30 40 50 60 70 80 90 100
5
10
15
20
25
Relative Intensity Vs. Wavelength
Wavelength, nm
Rel
ativ
e In
tens
ity
400 450 500 550 600 650 700 750 800
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
Rel
ativ
e In
tens
ity; N
orm
aliz
ed a
t 20m
ARelative Intensity Vs Forward Current
Forward Current; mA
Rel
ativ
e In
tens
ity; N
orm
aliz
ed a
t 10m
A
0 10 20 30 40 50
0
1
2
3
4
Forward Current Vs Forward Voltage
Forward Voltage; V
Forw
ard
Cur
rent
; mA
2 2.5 3 3.5 4
0
10
20
30
40
50
Maximum Current Vs Ambient Temperature
Ambient Temperature
Forw
ard
Cur
rent
; mA
0 10 20 30 40 50 60 70 80 90 100
0
5
10
15
20
25
Dominant Wavelength Shift Vs Forward Current
Forward Current, mA
0 5 10 15 20 25 30
-4
-2
0
2
4
6
8
10
12
Relative Intensity Vs Wavelength
Wavelength, nm
400 450 500 550 600 650 700 750 800
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
Forward Current Vs Forward Voltage
Forward Voltage, V
Variables
IF mA
2 2.5 3 3.5 4
0
10
20
30
40
50
Relative Intensity Vs Wavelength
Wavelength, nm
Variables
Relative Intensity
350 400 450 500 550 600 650 700 750 8000
0.10.20.30.40.50.60.70.80.9
1
InGaN : DNZP-DJG-I1
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Mini DomiLEDTM • InGaN : DNZP-DJG-I1 Package Outlines
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Material
Material
Lead-frame
Package
Encapsulant Soldering Leads
Cu Alloy With Ag Plating
High Temperature Resistant Plastic, PPA
Silicone
Sn Plating
21/04/2014 V2.08
InGaN : DNZP-DJG-I1
Recommended Solder Pad
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DOMINANT Semiconductors
11/05/10 Mini DomiLED InGaN White DNW-DZJG - Catalogue-pv3 Page 5 of 9
PRELIMINARY UNDER DEVELOPMENT
Engineering reference data are not verified. The specifications are subject to change without notice.
Recommended Solder Pad
21/04/2014 V2.09
Taping and orientation
• Reels come in quantity of 3000 units.• Reel diameter is 180 mm.
InGaN : DNZP-DJG-I1DOMINANTOpto TechnologiesInnovating Illumination
TM
DOMINANT Semiconductors
11/05/10 Mini DomiLED InGaN White DNW-DZJG - Catalogue-pv3 Page 7 of 9
PRELIMINARY UNDER DEVELOPMENT
Engineering reference data are not verified. The specifications are subject to change without notice.
Taping And Orientation. Reels come in quantity of 3000 units.
Reel diameter is 180 mm.
21/04/2014 V2.010
Packaging Specification
InGaN : DNZP-DJG-I1DOMINANTOpto TechnologiesInnovating Illumination
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Packaging Specification
Average 1pc Mini DomiLED 1 completed bag (3000pcs)
0.034 190 ± 10Weight (gram)
CardboardBox
Dimensions (mm) Empty BoxWeight (kg)
300 x 250 x 250
416 x 516 x 476
15 reels MAX
96 reels MAX
Small
Large
For Mini DomiLEDTM
Reel / Box Quantity / Box (pcs)Cardboard BoxSize
0.58
1.74
45,000 MAX
288,000 MAX
Weight (gram) 0.007 140 ± 10
InGaN : DNZP-DJG-I1
DOMINANT TM
D/C: date codeS/N : serial no
GROUP : group
QTY : product quantity per reel
PART NO : partno
LOT NO : lotno
Moisture sensitivity level
Moisture absorbent material +Moisture indicator
The reel, moisture absorbent material and moisture indicator aresealed inside the moisture proof foil bag
Reel
Barcode label
DOMINANT ROHS Compliant
PB Free
Label
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Time (sec)0 50 100 150 200
300
250
225
200
175
150
125
100
75
50
25
275
Tem
pera
ture
(˚C
)Classification Reflow Profile (JEDEC J-STD-020C)
Ramp-up3˚C/sec max.
255-260˚C10-30s
60-150s
Ramp-down
6˚C/secmax.
Preheat 60-180s
480s max
217˚C
Recommended Pb-free Soldering Profile
InGaN : DNZP-DJG-I1DOMINANTOpto TechnologiesInnovating Illumination
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Revision History
Page
-
2, 3
Subjects
Initial Release
Add Thermal ResistanceAdd Characteristics
Date of Modification
24 Jan 2014
21 Apr 2014
InGaN : DNZP-DJG-I1
21/04/2014 V2.013
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NOTE
All the information contained in this document is considered to be reliable at the time of publishing. However, DOMINANT
Opto Technologies does not assume any liability arising out of the application or use of any product described herein.
DOMINANT Opto Technologies reserves the right to make changes to any products in order to improve reliability, function
or design.
DOMINANT Opto Technologies products are not authorized for use as critical components in life support devices or systems
without the express written approval from the Managing Director of DOMINANT Opto Technologies.
InGaN : DNZP-DJG-I1
About Us
DOMINANTOpto TechnologiesInnovating Illumination
TM
DOMINANT Opto Technologies is a dynamic Malaysian Corporation that is among the world’s leading SMT LED Manufacturers. An excellence – driven organization, it offers a comprehensive product range for diverse industries and applications. Featuring an internationally certifi ed quality assurance acclaim, DOMINANT’s extra bright LEDs are perfectly suited for various lighting applications in the automotive, consumer and communications as well as industrial sectors. With extensive industry experience and relentless pursuit of innovation, DOMINANT’s state-of-art manufacturing, research and testing capabilities have become a trusted and reliable brand across the globe. More information about DOMINANT Opto Technologies can be found on the Internet at http://www.dominant-semi.com.
DOMINANTOpto TechnologiesInnovating Illumination
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Please contact us for more information:
DOMINANT Opto Technologies Sdn. BhdLot 6, Batu Berendam, FTZ Phase III, 75350 Melaka, Malaysia.Tel: +606 283 3566 Fax: +606 283 0566E-mail: [email protected]