Discussion of the potential step method ... -...
Transcript of Discussion of the potential step method ... -...
J. Electroanal. Chem., sous presse
Discussion of the potential step method for the determination of the diffusion coefficients of guest species in host materials.
I. Influence of charge transfer kineticsand ohmic potential drop
C. Montella*
École Nationale Supérieure d'Électrochimie et d'Électrométallurgie de Grenoble,
Laboratoire d’Électrochimie et de Physicochimie des Matériaux et Interfaces, UMR 5631 CNRS-INPG,
associé à l’UJF, Domaine Universitaire, B.P. 75, 38402 Saint Martin d'Hères, France
Abstract
Theoretical expressions are given for the output response of ion-insertion electrodes to a
potential step assuming linear diffusion, restricted (blocking) diffusion conditions and possible
limitations by insertion reaction kinetics. The effects of ohmic potential drop are also investigated.
It is shown that slow interfacial charge transfer cannot be distinguished from ohmic drop effects, in
contrast to impedance diagrams where ohmic drop and charge transfer effects can be separated.
The influence of potential step amplitude is discussed. Chronocoulometric analysis is dealt with
considering diffusion controlled processes as well as mixed control conditions. The error in the
determination of the chemical diffusion coefficient of a guest species from chronoamperometric
data, when using the limiting Cottrell equation in the short-time range or the exponential decay of
current in the long-time domain, is evaluated in relation to insertion reaction kinetics and ohmic
potential drop. Determination of the diffusion coefficients by curve fitting is also envisaged using
the current vs. time and charge vs. time relationships. Finally previous results in the electrochemical
literature are discussed in the light of the theoretical derivations proposed in this paper.
Keywords: Potential step; chronoamperometry; chronocoulometry; absorption; intercalation;
diffusion coefficient.
* Member of the Institut des Sciences et Techniques de Grenoble
Tel.: + 33-4-76826526; fax: + 33-4-76826630; e-mail: [email protected]
1. INTRODUCTION
The potential step chronoamperometry (PSCA) method is widely used for the determination of
the diffusion coefficients of guest species in host materials [1] based on the theoretical derivation
presented initially by Wen et al. [2] for diffusion controlled processes. Moreover, the potentiostatic
intermittent titration technique (PITT) [2, 3], which is based on a staircase potential signal, is an
extension of this method.
First, the diffusion model, the different graphical representations of the current transient used in
the electrochemical literature to characterize insertion processes and the principles for the
determination of the diffusion coefficients of guest species from PSCA data are reviewed. Next,
some examples of deviation from the diffusion model are quoted and finally the aim of this paper
is presented in the introduction.
1.1. Diffusion model
A restricted (or blocking) diffusion condition is satisfied for a planar electrode, i.e. the
diffusion flux is zero at some distance L from the electrolyteelectrode interface, either considering
linear diffusion in a thin film of host material, of thickness L, deposited on a substrate impermeable
to the diffusing species (Fig. 1A) or linear diffusion in a material foil or in platelet particles, of
thickness 2L, symmetrically submitted to insertion on both sides (Fig. 1B). In the latter case,
restricted diffusion is due to the symmetry for the concentration profile with respect to the middle
plane at the abscissa L.
Assuming diffusion control (very fast insertion reaction kinetics), linear diffusion and restricted
diffusion conditions, neglecting the effects of ohmic potential drop and double-layer charging
current, finally disregarding phase transition processes, equivalent expressions of the output
response to a potential step have been derived in the electrochemical literature. The following series
which converges rapidly in the long-time domain ( t > τ d ) can for example be used [2, 4, 5]:
I tQ
nt
n
dd d
( ) exp – ( – )=
=
∞
∑2 2 14
22
1
∆τ
πτ
(1)
or alternatively:
I tQ
tn t
n
dd
nd( ) – exp –= + ( ) ( )
=
∞
∑∆π τ
τ1 2 1 2
1
(2)
which is well suited to calculation for short times ( t < τ d ). In the above equations, Id is the
- 2 -
diffusion current, t the elapsed time from the beginning of the step, τ d the diffusion time constant
and ∆Q the total amount of Faradaic charge passed following a potential step, with:
τ d = L D2 , ∆ ∆Q I t t FAL c= ( ) = −∞
∫ d d0
(3)
where L is the diffusion length, D the chemical diffusion coefficient of guest species, F the Faraday
constant, A denotes the electrochemically active surface area and ∆c the variation of guest species
concentration in the host material due to the applied potential step. Equilibrium is assumed for the
insertion reaction both at the initial and final times, and positive and negative values of ∆c
correspond to insertion and de-insertion processes, respectively. Minus sign in Eq. (3) applies to
cation-insertion reactions ( H , Li , Na , K etc.+ + + + , ), so the Faradaic current and the related charge
are both negative (reduction reaction) for insertion processes ( ∆E < 0, ∆Q < 0 and ∆c > 0) in
accordance with the IUPAC convention.
Neglecting all exponential terms in Eq. (2), the well known Cottrell relationship is obtained for
short times (st):
I t I tQ
t
FA D c
td st Cottrelld
( ) = ( ) = = −∆ ∆π τ π
(4)
while an exponential decay of diffusion current with respect to time is predicted for long times (lt),
considering the leading term in Eq. (1), as:
I tQ t
FAD
Lc
Dt
Ld ltd d
( ) exp – exp –=
= −
24
24
2 2
2
∆ ∆τ
πτ
π(5)
1.2. Representations of the current transient
From Eqs. (1) and (2), the current is plotted vs. time in Fig. 2A. The current is divided by the
scale factor, 2 2∆ ∆Q FA D L cτ d = − ( ) , and the time divided by the diffusion time constant, τ d , to
obtain dimensionless quantities in the figure for the sake of generality. The current variation
shows a rapid decay, as usually observed for diffusion controlled processes.
The ratio of the diffusion current to the limiting Cottrell relationship in Eq. (4) is shown in
Fig. 2B. The theoretical representation in Fig. 2B is the dimensionless form of the Cottrell function
plot, I t t t( ) vs. log , used by Levi and Aurbach [6] to represent their experimental data for lithium
ion insertion into graphite electrodes. Deviation from semi-infinite linear diffusion, i.e. deviation
from a horizontal straight line in a I t t t( ) vs. log plot, can be visualized easily by plotting such a
- 3 -
graph.
In addition, the usual Cottrell plot (current vs. time–1/2) is given in Fig. 2C in dimensionless
form and compared to the Cottrell straight line (dashed line) plotted from Eq. (4). Finally, the
decimal logarithm of current is plotted vs. time in Fig. 2D, using dimensionless notation, and
compared to the asymptotic straight line (dashed line) predicted from Eq. (5).
Less than 1 % deviation from the limiting Cottrell equation is observed in Fig. 2B for
t τ d < 0 19. , i.e. 1 2 3t τ d > . in the Cottrell plot of Fig. 2C, while the linear variation in Fig. 2D is
satisfied (less than 1 % deviation from the limiting current in Eq. (5)) when t τ d > 0 23. . Hence, the
transition between the two limiting expressions for the diffusion current, respectively semi-infinite
linear diffusion current in Eq. (4) and exponential decay in Eq. (5), is observed within a narrow
time range near t = 0 2. τ d for diffusion controlled processes and restricted linear diffusion
conditions.
Some authors noted that ‘the change in shape of the current transient is of greater importance
than the absolute current level, and therefore it is very effective to introduce the derivative of the
current transient or logarithmic current with respect to time or logarithmic time’ [7, 8].
The logarithm of diffusion current is plotted in Fig. 3B vs. logarithm of time, using
dimensionless notation. The transient due to the diffusion process shows a linear dependence,
log current vs. log time, with a slope of (– 1/2) characteristic of semi-infinite linear diffusion,
followed by a steep exponential decay due to restricted diffusion. The derivative of logarithmic
current with respect to logarithmic time is plotted in Fig. 3C with the constant value (– 1/2) in the
short-time domain. Such plots are used in the electrochemical literature to discriminate between
diffusion in single-phase materials, as studied in this paper, and diffusion coupled with phase
transition processes in two-phase materials, such as lithium-ion insertion into Li CoO1 2−δ
electrodes [7, 8].
Finally, the graphical representation of Fig. 3D has not yet been used in electrochemical
literature, to the best of our knowledge. Nevertheless, it is well suited to the characterization of
diffusion controlled processes and restricted linear diffusion conditions because of the two limiting
expressions respectively valid for short and long times:
d dd stlog ( ) log /I t t = − 1 2 (6)
and:
- 4 -
d dd lt dlog ( ) logI t t t= − ( )π τ2 4 (7)
The validity domains for the above expressions are separated by a narrow time range near
t = 0 2. τ d , which is characteristic of restricted linear diffusion.
1.3. Determination of the diffusion coefficient of a guest species
The diffusion coefficient of a guest species is generally determined either from the short-time
expression of the diffusion current in Eq. (4) where I t tCottrell( ) is the characteristic time-invariant
function [6] and also the slope ( Sl ,stI ) of the Cottrell straight line in a current vs. time 1/2− plot,
from which D is obtained as:
DI t t
QL
QL
FA cI I= ( )
=
=
π π πCottrell ,st ,stSl Sl
∆ ∆ ∆
2 2 2
(8)
provided the diffusion length L is known independently, or from the long-time domain where an
exponential decay of current is predicted. Taking the decimal logarithm of both sides in Eq. (5) and
plotting log current vs. time, the diffusion coefficient can be obtained from both the intercept
( Int ,ltI ) and slope (Sl ,ltI ) of the portion of straight line, according to:
DL
Q
L
FA cI I= =
2
210
210
∆ ∆Int Int,lt ,lt (9)
and:
DL
I= 4102
2
lnπ
Sl ,lt (10)
More generally, using a curve fitting procedure, experimental chronoamperograms can be
compared to Eqs. (1) and (2) over a large time range provided ohmic potential drop is disregarded
and the double-layer charging current is negligible compared to the Faradaic current. The total
Faradaic charge ∆Q passed following a potential step is obtained by integration of the current
transient with respect to time, so only one adjustable parameter, τ d = L D2 , is needed to compare
experimental chronoamperograms to Eqs. (1) and (2).
1.4. Deviation from the diffusion model
Nevertheless, deviations from the theoretical relationships in Eqs. (1) to (10) and related graphs
in Figs. 2 and 3 are frequently observed in experimental works focused on host materials and
- 5 -
insertion reactions. Recent examples include studies on lithium-ion insertion in thin graphite,
Li NiOx 2 and Li Co Ni Ox 0.2 0.8 2 electrodes by Levi et al. [4, 6, 9] and Li CoO1- 2δ electrodes by Shin
and Pyun [7, 8], potassium-ion insertion in thin films of prussian blue (ferric ferrocyanide, PB) by
Garcia-Jareño et al. [10], as well as other works not discussed in this paper.
Potassium-ion insertion in thin PB films deposited on ITO substrate was thoroughly examined
by Garcia-Jareño et al. using PSCA [10], cyclic voltammetry [11] and the EIS method [12].
Considering chronoamperometric results, deviation from the Cottrell equation was analyzed by the
above authors in terms of ohmic potential drop in the electrolytic solution and the ITO substrate.
Numerical simulations were carried out by these authors, taking ohmic drop into consideration, and
the theoretical model was consistent with experimental data.
However, the impedance diagrams plotted for the same materials [12] clearly show the presence
of a large interfacial charge transfer resistance compared to the solution and substrate resistances,
which denotes slow ion-transfer kinetics at the solutionPB interface and/or slow electron-transfer
kinetics at the PBITO interface. Hence, the question to be answered is whether or not kinetic
limitations by interfacial charge transfer can be neglected when analyzing the current transient due
to a potential step for potassium-ion insertion in PBITO electrodes.
On the other hand, Levi et al. [4, 6, 9] studied lithium-ion insertion in thin graphite, Li NiOx 2
and Li Co Ni Ox 0.2 0.8 2 electrodes using cyclic voltammetry, chronoamperometry (PITT), current
pulses and the EIS method. Considering potential step experiments, these authors always observed
that the Cottrell region (Eq. (4)) is narrow with respect to time given that the short-time domain is
affected by ohmic potential drop, lithium-ion migration through superficial passivation layers on
particles of host material and slow ion-transfer at the particle surface, while the long-time deviation
from Eq. (5) is connected with particle size distribution. Similarly, deviation from the restricted
(or finite space) diffusion impedance was observed by these authors in the low frequency domain,
considering the impedance diagrams plotted for the same materials [6, 9].
Finally, Shin and Pyun [7, 8] observed that the log current vs. log time plot for lithium-ion
insertion in Li CoO1- 2δ electrodes and potential stepping in the single α phase domain deviates
from the theoretical prediction in Fig. 3B and ‘shows a monotonic increase in its slope from an
almost flat value to the infinite one in absolute value’. These authors interpreted their
chronoamperometric data in terms of ‘purely cell-impedance controlled diffusion’ of lithium-ion in
Li CoO1- 2δ [8].
- 6 -
1.5. This work
The aim of this work is to point out and discuss theoretically the effects of insertion reaction
kinetics and ohmic potential drop on the output response of ion-insertion electrodes to a potential
step and to demonstrate the advantage of the simultaneous application of potential step and EIS
methods for the determination of the chemical diffusion coefficients of guest species in host
materials.
The theoretical response to a potential step depends on the geometric model used to represent
insertion and diffusion processes in host materials. In this paper we are concerned with planar
films of host material, of thickness L, deposited on a substrate impermeable to the diffusing species
(Fig. 1A), as generally assumed for thin films obtained by electrodeposition, sputtering or spray
deposition. Diffusion of guest species starts at the electrolytefilm interface, while electron transfer
is observed simultaneously at the substratefilm interface. Ideal thin films (isotropic material, no
structural defects) are assumed, so that the diffusion coefficient of intercalated species takes on a
simple meaning in this case due to one-dimensional diffusion.
The model used below for insertion and diffusion processes also applies to linear diffusion in
material foils, of thickness 2L, symmetrically submitted to insertion on both faces (Fig. 1B). Levi
and Aurbach [6] used the same geometric model to represent lithium-ion insertion into platelet
particles of graphite in thin film composite electrodes.
Two-phase interfaces are considered in the above model. A reaction front advancing from the
three-phase junction, electrolytesubstrateactive material, was envisaged alternatively by Schröder
et al. [13] and Lovric and Scholz [14, 15] for modeling the propagation of a redox reaction through
microcrystals (mixed ionic-electronic conductor) immobilized at an electrode surface and in contact
with an electrolyte solution. The influence of crystal shape and crystal size on the output response
to a potential step was thoroughly examined in these papers using algebraic as well as numerical
methods.
A three-phase junction, electrolyteactive particleelectronic conductor, may also be considered
in composite electrodes where additives, such as carbon black, are generally used to improve
electronic conduction in the electrode, which results in a complicated geometry for coupled mass-
transport of ions and electrons in electroactive particles.
Two- or three-dimensional diffusion occurring from a three-phase junction is disregarded in
this paper because of the simple geometric model assumed for the thin film electrodes and particles
- 7 -
in Fig. 1. Moreover, to focus on insertion reaction kinetics and ohmic drop effects, linear diffusion
of guest species in single phase materials and/or potential domains (no phase transformation) is
assumed below. Other effects related to the geometry of diffusion in host materials and the
distribution of diffusion lengths in particles of composite electrodes will be dealt with in the second
and third parts of this work [16].
First the theoretical response to a potential step is derived in this paper and the possible shapes
for the Faradaic current transient discussed, next chronocoulometric analysis is dealt with and
finally the conditions for the determination of the diffusion coefficients of guest species are
analyzed. Previous results in the electrochemical literature are also discussed in the light of the
theoretical derivations given in this paper.
2. CHRONOAMPEROMETRY
To our knowledge, the first theoretical work focusing on the response of insertion electrodes to
a potential step and taking into account kinetic limitations by surface processes is that of Krapvinyi
et al. [17, 18] who studied hydrogen extraction from metallic sheets using large-amplitude potential
steps. More recently, Chen et al. [19] given the theoretical response to a small-amplitude potential
step for hydrogen absorption in thin metal films or foils, under restricted linear diffusion
conditions, assuming no hydride formation and taking kinetic limitations at the metalelectrolyte
interface into consideration.
Using the metallic-type potential distribution in host materialelectrolyte systems, as discussed
by Levi and Aurbach [6], the model in Ref. [19] also applies to ion-insertion processes in thin
films, foils or platelet particles of host material with planar geometry. This model is extended below
to cover the case where ohmic potential drop is present.
The insertion material is assumed to be initially ( t < 0) in the equilibrium state corresponding
to an electrode potential E0 and a uniform concentration of guest species, c c E0 0= ( ), given by the
insertion isotherm c(E), which is the reverse function of the coulometric titration curve E c( ) generally used in the literature. A potential step from E0 to E E E1 0= + ∆ , where ∆E can be either
positive or negative, which corresponds respectively to de-insertion and insertion processes for
cations, is imposed on the electrode at t = 0. After the current transient, the electrode tends towards
the new equilibrium state corresponding to potential E1 and uniform concentration of guest species
c c E1 1= ( ) , with c c c1 0= + ∆ .
- 8 -
2.1. Laplace transform of Faradaic current
Assuming small-signal (linearity) conditions for both potential step and EIS methods, the
Laplace transform of the current transient due to a potential step from E0 to E E0 + ∆ , with
∆E RT nF<< ( ) where the number (n) of electron involved in the reaction is equal to one in this
paper and the other symbols have their usual meaning, is related to the electrode impedance Z s( )
measured at the steady-state potential E0 through the following equation where s denotes the
Laplace complex variable:
I sE
sZ s( ) =
( )∆
(11)
Using the usual equivalent circuit for the impedance of electrochemical systems [20], Z s( ) can
be written as:
Z s R sC Z s( ) = + + ( )[ ]Ω 1 1dl F (12)
where Z sF ( ) is the Faradaic impedance, Cdl the differential (double-layer) capacitance and RΩ the
sum of ohmic resistances in the electrolyte, bulk material and material substrate or current collector.
More complicated equivalent circuits are sometimes proposed for insertion processes to include the
effects of ion migration through superficial passivation layers when considering lithium-ion
insertion into graphite electrodes [4, 9] for example.
Provided the differential (double-layer) capacitance, as well as the possible capacitances of
superficial layers on the host material (e.g. passivation layers on graphite particles), are sufficiently
low with respect to the insertion capacitance of the bulk material, the electrode impedance can be
approximated, except in the high frequency (or s) domain, by:
Z s R Z s( ) ≈ + ( )Ω F (13)
Assuming a uniformly accessible electrode, the Faradaic impedance for insertion reactions is
well known. Neglecting limitations by mass transport in the electrolyte, considering a direct (one-
step) insertion reaction, assuming linear diffusion of guest species in a thin film or foil of host
material or in platelet particles of a composite electrode (in the latter case the potential gradient in
the electrode is neglected), with restricted diffusion conditions (Fig. 1), finally disregarding phase
transition processes, Z sF ( ) takes on the following expression [19, 21, 22]:
Z s R R s sF ct d d d( ) = + coth τ τ , τ d = L D2 (14)
- 9 -
where the interfacial charge transfer resistance, Rct , and the diffusion resistance, Rd , are written in
terms of thermodynamic, kinetic and diffusion parameters [19] as:
R FAvEct = − ( )1 (15)
R FAm c Ed d d= − ( )[ ]1 , m D L= (16)
In these equations, m is the diffusion constant, τ d the diffusion time constant and d dc E the
insertion isotherm slope which satisfies:
d dc E v vE c= − (17)
because of equilibrium state at the initial potential of potential step. vE and vc are the partial
derivatives of insertion reaction rate (v) with respect to potential and concentration of guest species,
both evaluated at the initial potential E0 :
v v EE c= ∂ ∂( ) , v v cc E
= ∂ ∂( ) (18)
The quantities d dc E , vE and vc are all negative in Eqs. (15) to (18) due to the assumption of
cation-insertion reactions in this paper. Moreover, considering small signals (linearity condition),
the concentration variation in the host material is related to the potential step amplitude by the
linearised relationship:
∆ ∆c c E E= ( )d d (19)
Introducing the dimensionless parameter:
Λ =+
=+
=+
R
R R
v m
R R m v R Rc
c
d
ct ct dΩ Ω Ω11
(20)
where all quantities are evaluated at the initial potential E0 , the Laplace transform of Faradaic
current is derived from the above equations as:
I sE R R
s s s( ) =
+( )+( )
∆ Ω ct
d d1 Λ coth τ τ(21)
Setting s → ∞ in Eq. (21), the term coth τ τd ds s tends towards zero, and, using the inverse
Laplace transform, the Faradaic current at the initial time is given by the equivalent expressions:
- 10 -
Ι Λ Λ Λ0( ) =+
= = = −∆ ∆ ∆ ∆Ω
E
R R
E
R
QFA
D
Lc
ct d dτ(22)
The initial current depends linearly on the concentration variation in the host material, ∆c , the total
charge passed following a potential step, ∆Q , and the potential step amplitude ∆E . Hence, the
Faradaic current vs. potential relationship follows Ohm’s law for short times ( t → 0) provided
∆E RT F<< .
From Eqs. (21) and (22), we obtain finally:
I sI
s s s( ) = ( )
+( )0
1 Λ coth τ τd d
(23)
2.2. General expressions for the Faradaic current
Inverse Laplace transform of Eq. (23) gives the Faradaic current transient caused by a small-
amplitude potential step as the infinite series expansion:
I t Ib
b tn
n
n
( ) exp –= ( )+ ( )
=
∞
∑2 0 2 22
1
ΛΛ Λ +
τ d (24)
where bn is the nth positive root of the equation:
b btan – Λ = 0 (25)
Equivalent formulations of I t( ) are easily derived from Eqs. (22) and (24) as:
I tE
R R bb t
nn
n
( ) exp –=+ + ( )
=
∞
∑2 2 22
1
∆
Ω ctd
ΛΛ Λ +
τ (26)
and:
I tE
R bb t
nn
n
( ) exp –=+ ( )
=
∞
∑22
2 22
1
∆
dd
ΛΛ Λ +
τ (27)
Eqs. (26) and (27) give the current transient in terms of electrical components of the equivalent
circuit for the electrode impedance. These equations can also be written in terms of thermodynamic,
kinetic, diffusion and ohmic parameters, from Eq. (22), as:
I t FAD
Lc
bb
Dt
Lnn
n
( ) exp –= −+ +
=
∞
∑22
2 22
21
∆ ΛΛ Λ
(28)
- 11 -
where minus sign applies to cation-insertion reactions ( H , Li , Na , K etc.+ + + + , ). A in Eq. (28) is
the total surface area (both faces) when using the electrode or particle geometry of Fig. 1B, while it
is the area of the materialelectrolyte interface (single face) for the thin film in Fig. 1A.
Finally, using the diffusion time constant and the total amount of Faradaic charge passed
following a potential step, as defined in Eq. (3), an alternative formulation of the current transient is
derived from Eq. (28) as:
I tQ
bb t
nn
n
( ) exp –=+ + ( )
=
∞
∑22
2 22
1
∆τ
τd
dΛ
Λ Λ(29)
The above relationship is valid for both electrode geometries in Fig. 1 and generalizes the well
known Eq. (1) which is obtained as a limiting case setting Λ → ∞ (diffusion control) in Eq. (29)
with b nn = ( )2 1 2– π from Eq. (25).
Eq. (24) and Eqs. (26) to (29) give five equivalent formulations of the electrode response to a
small-amplitude potential step for cation-insertion processes studied by the PSCA method under
restricted linear diffusion conditions, in the absence of phase transition processes. Due to the use
of a small signal amplitude, the theoretical derivation is valid whatever the insertion isotherm type
(Langmuir, Frumkin or other isotherm) and reaction rate expression (Butler-Volmer or other
relationship).
The relationship between the chemical diffusion coefficient of a guest species and the insertion
isotherm was derived first by Armand [23], to the best of our knowledge, and discussed more
recently by Chen et al. [24] and Levi and Aurbach [6]. However, Eqs. (24) to (29) apply whether
the diffusion coefficient is constant or depends on the guest species concentration in the host
material because of (i) a small signal amplitude, (ii) restricted diffusion conditions and therefore
(iii) uniform concentration of guest species in the host material and equilibrium for the insertion
reaction under steady-state conditions [25].
The theoretical expressions for the current transient caused by a small-amplitude potential step
have been derived in this Section assuming that the capacitive current is negligible compared to the
Faradaic current. Therefore, these equations cannot be used to fit experimental data obtained for
very short times where measurements are corrupted due to the presence of the double-layer
capacitance. In particular, the initial current in Eq. (22) cannot be measured directly and
extrapolation techniques should be used to determine I 0( ).
2.3. Parameter ΛΛΛΛ: a key factor for the kinetics of insertion processes
- 12 -
Clearly, the dimensionless parameter Λ is a key factor for the kinetics of insertion processes
studied by PSCA. In Eq. (20), v mc compares the diffusion constant, m D L= , and the reaction
rate constant which is included in the partial derivative vc . In addition, the influence of ohmic
potential drop is characterized by the resistance ratio R RΩ ct or R RΩ d .
The general expression for the parameter Λ, irrespective of insertion isotherm type and rate
control conditions, is obtained from Eqs. (15) and (20), in terms of partial derivatives of reaction
rate, as:
Λ =+
v L D
R FA vc
E1 Ω
(30)
while equivalent formulations can be written using the insertion isotherm slope, d dc E , and the
derivative calculus rule in Eq. (17).
The Λ value for PSCA experiments depends on the insertion isotherm type, the initial potential
of potential step, the reaction rate constant, the diffusion coefficient of guest species, the film, foil
or particle thickness in Figs. 1A and B, and the presence of ohmic drop. For example, assuming
Langmuir isotherm conditions for the insertion process (formation of a solid solution with no
interaction in the host material) and a cation concentration of 1mol L 1− (standard concentration) in
the electrolyte solution, Λ takes on the following expression derived in the Appendix A:
Λ =°( ) −( ) +( )
+ ° −( )[ ] +( )k L D
R fFAk c
exp exp
exp exp
α ξ ξα ξ ξ
r
max r
0 0
0 0
1
1 1 1Ω
(31)
where k° is the standard rate constant for the insertion reaction, α r the symmetry factor of
interfacial charge transfer in the direction of reduction, cmax the maximal (saturation) concentration
of guest species in the host material, ξ0 the initial potential of potential step written in
dimensionless form, ξ0 0= − °( )f E E with f F RT= ( ), and E° denotes the standard potential, i.e.
the equilibrium potential corresponding to the standard concentration in the solid solution,
c c° = max 2.
On the other hand, whatever the insertion isotherm, Λ can be estimated from Eq. (20) using
experimental values of the diffusion resistance, charge transfer resistance and electrolyte and/or
substrate resistances measured on an impedance diagram plotted for the same potential range.
- 13 -
2.4. Parameter ΛΛΛΛ and concentration profile in the host material
The influence of the parameter Λ is well illustrated by the concentration profile vs. time
variation plotted in Figs. 4 to 6. Solving the diffusion equations together with the boundary
conditions at the material surfaces (continuity condition at x = 0 and blocking diffusion condition
at x = L), the Laplace transform of guest species concentration in the host material is given by:
c x sc
s
I x L
FAms,
sinh( ) = −
( ) −( )[ ]+[ ]
00 1cosh s
cosh s s sd
d d d
ττ τ τΛ
, 0 ≤ ≤x L (32)
where x is the distance from the electrolytehost material interface. Using inverse Laplace
transforms of the different terms, we obtain, after some reorganization, the normalized
concentration vs. space and time dependence due to potential stepping:
c x t c
c c b
b x L
bb t
n
n
nn
n
,cos
exp –( ) −
−= −
+ +( )−( )[ ] ( )
=
∞
∑0
1 02 2
2
1
1 21Λ
Λ Λcos
dτ (33)
This relationship can alternatively be obtained from the theoretical expression given by Crank [26]
for similar problems of diffusion in a plane sheet coupled with surface evaporation processes,
because of the same diffusion equations and boundary conditions once written in dimensionless
form.
Large Λ values are characteristic of diffusion controlled processes due to very fast insertion
reaction kinetics and negligible ohmic drop or IR compensation. A concentration step from c0 to
c1 is imposed at the electrolytehost material interface ( x = 0) when Λ → ∞ , due to the applied
potential step from E0 to E1, and the mass transport process varies from semi-infinite diffusion
conditions for short times to restricted diffusion conditions for long times (Fig. 4). The related
limiting expression for the concentration is derived, setting Λ → ∞ in Eqs. (25) and (33), as:
c x t c
c c nn
x
Ln
t
n
,sin exp –
( ) −−
= −−( )
−( )
−( )
→∞
=
∞
∑Λ 0
1 0
22
1
14 1
2 12 1
22 1
4ππ π
τ d
(34)
In opposition, considering small Λ values due to slow charge transfer kinetics at the interface
and/or large ohmic drop in the different phases, we have b1 = Λ and b nn = π (for n > 1) from
Eq. (25), so all exponential terms, except the first, can be neglected in Eq. (33) when Λ tends
towards zero. It follows that:
c x t c
c ct
,exp
( ) −−
= − −( )→Λ Λ0 0
1 0
1 τ d (35)
c depends only on the time variable under the above conditions and quasi-uniform concentration of
- 14 -
guest species (negligible concentration gradient in the host material) is predicted over the whole
time domain, as shown in Fig. 5.
Finally, intermediate values of the parameter Λ in Eqs. (20) and (30) are characteristic of mixed
control conditions, i.e. control by diffusion and interfacial charge transfer kinetics and/or ohmic
drop. An example for such a concentration profile vs. time variation is presented in Fig. 6. The
mass transport process varies from semi-infinite diffusion conditions for short times to restricted
diffusion conditions for long times, but, in contrast to Fig. 4, the interfacial concentration of guest
species is time dependent, which is generally the case for most real systems.
2.5. Influence of capacitive current and ohmic drop
In Ref. [19] focused on hydrogen absorption in thin metal films, we wrote: ‘We have not taken
into consideration the electrolytic solution resistance Rs in the preceding calculation as the
influence of such a resistance and of the differential (double-layer) capacitance Cdl can be
neglected for times longer than the time constant, τ = +( )[ ]R R R R Cs ct s ct dl , whose value ...’.
This is incorrect and should be replaced by: under restricted diffusion conditions, the current
transient caused by a small potential step is not modified, due to the presence of the differential
(double-layer) capacitance, for times longer than the time constant, τ = +( )[ ]R R R R Cs ct s ct dl ,
provided Cdl takes on a very low value with respect to the insertion capacitance of the host material,
i.e. C FAL c Edl d d<< , which is generally observed for most real systems. However, if the latter
condition is not satisfied, the double-layer capacitance influences the response to a potential step
also in the long-time range due to the blocking condition, J L t,( ) = 0, for the diffusion process in
the host material.
On the other hand, whatever the kinetic and diffusion conditions, uncompensated ohmic drop
affects the current transient over the whole time domain, in opposition to the assertion in Ref. [19].
2.6. Influence of insertion reaction kinetics and ohmic drop
The shape of the current vs. time curve calculated from Eqs. (25) and (29) depends only on the
dimensionless parameter Λ given that the ratio ∆Q τ d and the diffusion time constant τ d are scale
factors for current and time, respectively. Looking at Eq. (20), we note that the effects of slow ion-
transfer kinetics at the electrolytehost material interface, as well as slow electron-transfer kinetics
at the host materialsubstrate (or current collector) interface, cannot be distinguished from ohmic
drop effects. Due to slow interfacial charge transfer (high Rct value compared to Rd) and/or large
ohmic drop (high RΩ value), the Λ value decreases in Eq. (20) and the current transient due to a
- 15 -
potential step is affected over the whole time domain, as indicated by Eqs. (25) and (29). Hence, the
effects of surface reaction kinetics and ohmic potential drop should be discussed at the same time
for the PSCA method. In contrast, ohmic drop effects and kinetic limitations by interfacial charge
transfer can be discriminated using the EIS method and the Nyquist representation of impedance
diagrams (see Fig. 13B below).
Hereafter, we assume that the double-layer charging current is negligible compared to the
Faradaic current over the time range considered and we use Eqs. (20), (25) and (29) to model the
current transient. The current is plotted in Fig. 7 using the same dimensionless representations as
in Fig. 2. Large Λ values (∞ in the figure) give the same theoretical dependences as in Fig. 2 due to
diffusion control.
The limiting response observed for short times (st) depends on Λ. Diffusion control and semi-
infinite linear diffusion (which corresponds to the concentration profile of Fig. 4 for short times),
i.e. the Cottrell equation, are satisfied when Λ → ∞ and t → 0, as shown in Figs. 7B and C:
I t I tQ
t
FA D c
t( )st, Cottrell
dΛ→∞ = ( ) = = −∆ ∆
π τ π(36)
In contrast, interfacial charge transfer and/or ohmic drop control ( Λ → 0 and therefore
b1 = Λ from Eq. (25)), which corresponds to quasi-uniform insertion conditions (Fig. 5), yields
the exponential dependence over the whole time domain:
I tQ
tE
R Rt
FA v c
R FA v
v t L
R FA vc
E E
( ) exp exp exp –Λ Λ Λ Λ→ = −( ) =+
−( ) = −+ +
0 1 1
∆ ∆ ∆
Ω Ω Ωττ τ
dd
ctd
c
(37)
which can be linearised for short times as:
I tQ
tE
R Rt
FA v c
R FA v
v t L
R FA vc
E E
( ) – –st,d
dct
dc
Λ Λ Λ Λ→ = ( ) =+
( ) = −+
−+
0 1 1
11
1∆ ∆ ∆
Ω Ω Ωττ τ
(38)
In the above equations, the partial derivative ( vc < 0) is replaced by ( − vc ), so minus sign is
apparent for cation insertion processes (reduction reaction, with ∆E < 0, ∆Q < 0 and ∆c > 0).
Finally, intermediate Λ values, which correspond to mixed control by diffusion and insertion
- 16 -
reaction kinetics and/or ohmic drop, lead for short times (semi-infinite linear diffusion in Fig. 6 for
t << τ d) to the relationships:
I tQ
t tE
R Rt t( ) exp expst
dd d
ctd derfc erfc= ( ) ( ) =
+ ( ) ( )Λ Λ Λ Λ Λ∆ ∆
Ωττ τ τ τ2 2
= −+ +( )
+
FA v c
R FA v
v t D
R FA v
v t D
R FA vc
E
c
E
c
E
∆
Ω Ω Ω1 1 1
2
2exp erfc (39)
which can be simplified for very short times (vst), using Maclaurin series expansions of
exponential function and error function complement, as:
I t Q tE
R Rt( ) – –vst d d
ctd= ( ) ( )[ ] =
+( )[ ]Λ Λ Λ∆ ∆
Ωτ πτ πτ1 2 1 2
= −+
−( )
+
FA v c
R FA v
v t D
R FA vc
E
c
E
∆
Ω Ω11 2
1
π(40)
In contrast, Eq. (39) becomes equivalent to (less than 1 % deviation from) the Cottrell relationship
in Eq. (36) when Λ2 48 5t τ d > . .
Setting RΩ = 0 (no ohmic drop or IR compensation) and H v Dc= =Λ τ d , Eqs. (39)
and (40) are similar in shape to the relationships given by Bard and Faulkner [27] for one-step
redox reactions with semi-infinite linear diffusion in the electrolyte and kinetic limitations at the
electrolyteelectrode interface. Nevertheless, the influence of ohmic drop is taken into
consideration in Eqs. (39) and (40), in contrast to the derivation by the above authors.
Deviation from diffusion controlled processes, due to limitations by insertion reaction kinetics
and/or ohmic potential drop, is well characterized by the presence of the maximum of the function
in Fig. 7B, which is equivalent to a maximum of the Cottrell function plot, I t t t( ) vs. log , from
the experimental point of view. No portion of straight line is present in the Cottrell plot of Fig. 7C
under the above conditions. This is observed, for example, considering the experimental results
obtained by Levi et al. [6, 9] for lithium-ion insertion into thin graphite electrodes.
The asymptotic behavior observed in the long-time domain is illustrated in Fig. 7D. For long
times (large t τ d ), restricted diffusion is satisfied in Figs. 4 to 6 whatever the Λ value. Only the
first term of the series in Eq. (29) and the equivalent expressions of Faradaic current is considered,
so the absolute value of current shows an exponential decay vs. time. It follows that a log I t( ) vs.
time plot should be linear for long times whether diffusion control ( Λ → ∞ = and b1 2π ):
I tQ t E
R
tFA
D
Lc
Dt
L( ) exp – exp – exp –lt,
d d d dΛ→∞ =
=
= −
24
24
24
2 2 2
2
∆ ∆ ∆τ
πτ
πτ
π
(41)
- 17 -
or control by interfacial charge transfer and/or ohmic drop ( Λ Λ→ =0 1 and b ):
I tQ
tE
R Rt
FA v c
R FA v
v t L
R FA vc
E E
( ) exp exp exp –lt,d
dct
dc
Λ Λ Λ Λ→ = −( ) =+
−( ) = −+ +
0 1 1
∆ ∆ ∆
Ω Ω Ωττ τ
(42)
or mixed control by diffusion and interfacial charge transfer and/or ohmic drop (intermediate Λ
value and b1 given by the first positive root of Eq. (25)) is satisfied:
I tQ
b
b tFA
D
Lc
bb
Dt
L( ) exp – exp –lt
d d
=+ +( )
= −+ +( )
2 2
2
212
12 2
212 1
22
∆ ∆τ τ
ΛΛ Λ
ΛΛ Λ
(43)
Levi et al. [6, 9] noted that the short-time response of ion-insertion electrodes to a potential step
is modified due to slow ion-transfer kinetics at the host material surface. More generally, slow
interfacial charge transfer and ohmic potential drop affect the current transient over the whole time
domain as shown in Fig. 7. Moreover, an important feature of Eqs. (41) to (43) is that an
exponential decrease of current with respect to time, in the long-time range, is not a sufficient
condition for predicting a diffusion controlled rate for insertion processes in thin films, foils or
particles of host material.
The logarithm of current is plotted vs. logarithm of time in Fig. 8B, using the same
dimensionless representation as in Fig. 3B, and the derivative of this curve is given in Fig. 8C. The
influence of insertion reaction kinetics and ohmic drop is clearly shown in the short-time domain
where d dlog ( ) logI t t varies from (– 1/2) for diffusion controlled processes to zero due to
constant current at short times for interfacial charge transfer and/or ohmic drop control.
The effects of insertion reaction kinetics and ohmic drop on the current transient are also
illustrated in Fig. 8D. Diffusion control ( Λ → ∞ ) gives the same characteristic curve as in Fig. 3D
with the limiting value (– 1/2) for short times and the limiting slope, − ( )π τ2 4 d , for long times in
a d d vs. timelog ( ) logI t t plot. In contrast, d dlog ( ) logI t t tends towards zero when t → 0
due to control by insertion reaction kinetics and/or ohmic drop, while a portion of straight line is
predicted in the long-time range, whatever the Λ value, according to:
d dlt dlog ( ) logI t t b t= − 12 τ (44)
- 18 -
Hence, deviation from diffusion controlled processes, due to limitations by interfacial charge
transfer kinetics and/or ohmic drop, is well characterized by the value ( d dlog ( ) logI t t > −1 2)
noted in the short-time domain. This is observed, for example, in the papers by Shin and Pyun [7,
8] for lithium-ion insertion in Li CoO1- 2δ electrodes and potential stepping in the single α phase
domain. The experimental results in Ref. [8] were interpreted by these authors assuming ‘purely
cell-impedance controlled diffusion’ of lithium-ion in Li CoO1- 2δ , i.e. assuming that the current-
potential relationship is ‘purely ohmic’. This model is an alternative to the theoretical derivation
presented in this work. The two models will be compared in a separate paper.
As a first conclusion, it should be emphasized that the use of the classical diffusion laws in thin
film materials, i.e. Eqs. (1) and (2) above, is only valid when considering very fast insertion
reaction kinetics, negligible ohmic drop or IR compensation, and therefore diffusion controlled
processes. In contrast, Eqs. (24), (28) and (29) derived in this paper apply for kinetic, diffusion and
ohmic drop control, as well as mixed control conditions. In addition, the current transient can be
modeled alternatively in terms of electrical components of the equivalent circuit for the electrode
impedance in Eqs. (26) and (27). Whatever the expression considered for the current transient, the
key factor for the kinetics of insertion processes studied by the PSCA method is the dimensionless
parameter Λ in Eqs. (20) and (30)
2.7. Potential step method vs. EIS method
As indicated above, the Laplace transform of the current transient caused by a potential step and
the electrode impedance measured at the same initial potential are related through Eq. (11) provided
a sufficiently small potential step is considered. Under the above conditions direct correspondences
can be stated between the results obtained by the two methods. The limiting Cottrell behavior
observed in the short-time domain corresponds to the Warburg impedance satisfied for high
frequencies, the exponential decay of current noted for long-time chronoamperometric experiments
is related to the low frequency capacitive behavior in EIS data, etc. Hence, the same theoretical
model should be used to fit experimental chronoamperograms and EIS data collected for the same
material.
Correspondences between PSCA and EIS data were noted in the experimental work by Levi
and Aurbach [6] focused on lithium-ion insertion in thin graphite electrodes. These authors noted
that chronoamperometric data deviate from Eq. (1) in the long-time range and EIS data are not
fitted well by the restricted diffusion impedance in the low frequency domain, due to particle size
distribution. Levi and Aurbach used the so-called Frumkin and Melik-Gaykazyan (FMG)
impedance to fit their EIS data. However, the FMG impedance is given by the series combination
of a bounded diffusion impedance [28] (or finite length diffusion impedance in Ref. [6]) and the
- 19 -
insertion capacitance; in contrast, restricted diffusion (finite space diffusion according to Ref. [6])
is generally assumed for insertion materials. Moreover, these authors propose no theoretical
expression for the output response of a composite electrode to a potential step that is consistent
with the FMG impedance. Therefore, the use of the FMG impedance cannot be recommended to fit
experimental data collected for ion-insertion materials.
2.8. Influence of potential step amplitude
A small-amplitude potential step was assumed in the above Sections of this paper in order to
linearise the kinetic equations. The situation is more complicated when considering non-linear
conditions due to a large potential step amplitude, as used experimentally by Garcia-Jareño et al.
[10] for studying potassium-ion insertion in PBITO electrodes. These authors imposed a
potential step from the initial potential, E0 = 0.6 V vs. Ag/AgCl/KCl 1M reference electrode,
corresponding to the prussian blue domain, to the final potential, E1 = – 0.2 V vs. the same
reference, which corresponds to the prussian white (or Everitt salt) domain. The same remark
applies to the experiments of Shin and Pyun [7, 8] focusing on lithium-ion insertion in Li CoO1- 2δ
electrodes. These authors imposed potential steps with amplitudes of several hundred of mV.
No general analytical solution of the diffusion and kinetic equations is possible under the above
conditions and numerical calculation, using a finite difference method for example, is needed to
simulate the theoretical behavior of the insertion electrode. However, a particular situation can be
treated theoretically in closed form to understand the influence of potential step amplitude.
Assuming that the diffusion coefficient of guest species does not depend on its concentration
inside the host material, and therefore on the electrode potential, that Langmuir isotherm conditions
(formation of an ideal solid solution with no interaction in the host material) are satisfied for the
insertion process, and disregarding ohmic drop and double-layer charging current effects, the
theoretical derivation presented for small-amplitude potential steps in Eqs. (24), (28) and (29)
above can be generalized to large potential steps [19] provided (i) the expression for the
dimensionless parameter Λ in Eq. (20) is replaced by:
Λ = v mc (45)
because of the assumption of a negligible ohmic drop or IR compensation, and (ii) the partial
derivative of reaction rate with respect to guest species concentration is evaluated at the applied
potential E1 rather than the initial potential E0 . Under the above conditions, the parameter Λ takes
on the expression:
- 20 -
Λ = °( ) −( ) +( )k L D exp expα ξ ξr 1 11 , ξ1 1= − °( )f E E (46)
and Eqs. (24), (28) and (29) remain valid for large potential step. In contrast, the linear dependence
of the concentration variation ∆c on the potential step amplitude ∆E in Eq. (19) is not satisfied
due to a large signal amplitude and therefore Eqs. (26) and (27) cannot be used to fit experimental
data for large potential steps.
Disregarding ohmic drop effects, large Λ values (diffusion control) can be achieved for thin
films, foils or platelet particles of host materials, and therefore the limiting relationships in Eqs. (1)
and (2) satisfied, either considering a small-amplitude potential step and a very high insertion rate
constant, irrespective of the insertion isotherm type and the dependence or not of the diffusion
coefficient on the electrode potential, or using a sufficiently large potential step amplitude,
irrespective of insertion reaction kinetics, provided D is constant.
In contrast, in the presence of ohmic drop, Garcia-Jareño et al. [10] neglected kinetic limitations
by interfacial charge transfer for potassium-ion insertion in PBITO electrodes submitted to a
large potential step despite the fact that the impedance diagrams plotted by these authors [12] for
the same electrodes in the PB region (which corresponds to the initial potential of potential step)
clearly show the presence of a large charge transfer resistance compared to the electrolyte and
substrate resistances. Pure ohmic drop control was assumed by these authors to fit their
experimental data. This should be discussed using a numerical method to solve the diffusion
equations.
- 21 -
3. CHRONOCOULOMETRY
The electrical charge variation (potential step chonocoulometry (PSCC) method) can also be
used to characterize insertion processes and determine the diffusion coefficients and kinetic
parameters from experimental data. The charge is obtained by integration of the current with
respect to time:
Q t It
( ) = ( )∫ τ τ0
d (47)
and, using dimensionless notation, Q t( ) is divided by the total amount of charge passed following
a potential step, ∆Q Q= ∞( ) , and the time divided by the diffusion time constant τ d .
3.1. Diffusion controlled processes
The Faradaic charge vs. time relationship is derived from Eq. (1), for diffusion controlled
processes and restricted linear diffusion conditions, as:
Q t
Q nn
t
n
d
d
( )–
–exp – ( – )
∆=
( )
=
∞
∑18 1
2 12 1
42 22
2
1π
πτ
(48)
or, which is equivalent, from Eq. (2):
Q t
Q
tn t
tn
n
tn n
nn
d
dd
d d
erfc( )
exp∆
= + −( ) −( ) − −( )
=
∞
=
∞
∑∑2 1 2 12
12
11πτ
τ πτ τ
(49)
The dimensionless charge is plotted vs. dimensionless time in Fig. 9A. The short-time
(Cottrell-domain) expression is obtained either setting t τ d → 0 in Eq. (49) or integrating the
current with respect to time in Eq. (4):
Q t
Q
tQ t Q t FA
Dtcd st
dd st Cottrell
( )( ) ( )
∆∆= ⇔ = = −2 2
πτ π(50)
as indicated by the dashed lines in Figs. 9B and C using the Q t Q t td Cottrell dvs.( ) ( ) ( )log τ and
Q t Q td dvs.( ) ∆ τ graphical representations. Less than 1 % deviation from the limiting Eq. (50)
is observed in Eqs. (48) and (49) when t < 0 32. τ d .
Under the above conditions, the diffusion time constant and therefore the diffusion coefficient
can be determined from the slope of the portion of straight line observed for short times in a
Q t t( ) vs. plot.
On the other hand, the dimensionless charge in Eq. (48) tends towards unity for long times,
- 22 -
according to:
Q t
Q
td lt
d
( )exp
∆= − −
18
42
2
ππτ
(51)
and a log 1 − ( )[ ]Q t Qd ∆ vs. time plot gives a portion of straight line (Fig. 9D) with intercept,
log 8 2π( ) , and slope, − ( )π τ2 4 10d ln , from which the diffusion coefficient can be obtained
provided t > 0 14. τ d (less than 1 % deviation in Eq. (48) from Eq. (51)).
3.2. Influence of insertion reaction kinetics and ohmic drop
The influence of insertion reaction kinetics and ohmic drop on the Faradaic charge variation is
shown in Fig. 10 using the same dimensionless representations as in Fig. 9. The theoretical curve
shape depends only on the parameter Λ in Eqs. (20) and (30), according to the following
expression derived from Eq. (29) by integration of the current with respect to time:
Q t
Q b bb t
n nn
n
( )– exp –
∆=
+ +( ) ( )=
∞
∑1 22
2 2 22
1
ΛΛ Λ
τ d (52)
Large Λ values (diffusion control, ∞ in the figure) give the same theoretical dependences as in
Eq. (48) and Fig. 9. In contrast, small Λ values corresponding to control by interfacial charge
transfer kinetics and/or ohmic drop give the following limiting form of Eq. (52):
Q t Q t( ) – exp –Λ Λ→ = ( )0 1∆ τ d (53)
which can be linearised for short times as:
Q t Q t( )st, dΛ Λ→ =0 ∆ τ (54)
A linear dependence is therefore predicted for the charge vs. time variation in the short-time range
(Fig. 10A) due to constant current for short times when insertion reaction kinetics and/or ohmic
drop control is satisfied.
Deviation from diffusion controlled processes and related Eqs. (48) and (49), due to limitations
by interfacial charge transfer kinetics and/or ohmic drop, is well characterized by the presence of
the maximum of the function plotted in Fig. 10B, which is equivalent to a maximum of the Cottrell
function plot for the charge, Q t t t( ) vs. log , from the experimental point of view. Such a
deviation can also be characterized by the inflection point observed in the graphical representation
(Cottrell plot for the electrical charge) of Fig. 10C.
- 23 -
Finally, from Eq. (52), the long-time variation of Faradaic charge follows the equation:
Q t
Q b bb t
( )explt
d∆= −
+ +( ) −( )1 22
12 2
12 1
2ΛΛ Λ
τ (55)
as illustrated by the semi-logarithmic plot of Fig. 10D. Whatever the Λ value, a portion of straight
line is predicted for long times in a log 1 − ( )[ ]Q t Q∆ vs. time plot with slope, − ( )b12 10τ d ln , and
intercept, log 2 212 2
12Λ Λ Λb b+ +( )[ ] , from which the diffusion coefficient can be obtained if Λ is
not too small. Less than 1 % deviation from Eq. (55) is predicted in Eq. (52) when t > 0 14. τ d for
diffusion controlled processes ( Λ → ∞ ), while a straight line is observed over the whole time
domain when Λ → 0, according to Eq. (53), due to rate control by insertion reaction kinetics
and/or ohmic drop.
As indicated above for the current transient, the theoretical predictions for the Faradaic charge
in Eqs. (48) to (55) and Figs. 9 and 10 are valid either considering small-amplitude potential steps,
irrespective of the insertion isotherm type, the reaction rate expression, the presence or not of
ohmic drop in the electrolyte, bulk material, etc., and the dependence or not of the diffusion
coefficient on the guest species concentration (here the partial derivatives vc and vE in Eq. (30) are
calculated at the initial potential E0 ), or using larger potential steps provided the diffusion
coefficient is constant, the Langmuir isotherm satisfied for the insertion process, ohmic drop
effects can be neglected and the partial derivatives vc and vE are evaluated at the applied potential
E1.
4. DETERMINATION OF THE DIFFUSION COEFFICIENT
OF A GUEST SPECIES
As indicated in the introduction of this paper, the chemical diffusion coefficients of guest
species in host materials are generally determined either from the limiting Cottrell equation or the
exponential decay of current for short- or long-time experiments, respectively.
The error in the determination of D due to limitations by surface reaction kinetics and/or ohmic
potential drop is discussed in this Section. Hereafter we assume that the double-layer charging
current is negligible compared to the Faradaic current over the time range considered and we use
Eqs. (25) and (29) to model the current transient where the parameter Λ takes on the expressions in
Eqs. (20) and (30). Determination of the diffusion coefficients of guest species by curve fitting is
also envisaged using the current vs. time and charge vs. time relationships.
- 24 -
4.1. Determination of D from a Cottrell plot (current vs. time–1/2)
Less than 1% deviation from the limiting Cottrell relationship (Eq. (4)) is predicted in Eq. (29)
when the condition, Λ2 48 5t τ d >( ). I t τ d <( )0 19. , is satisfied, as indicated in Fig. 11. Λ > 16
(very fast insertion kinetics and negligible ohmic drop) is therefore required to observe the Cottrell
domain in PSCA experiments for the diffusion geometry of Fig. 1.
The above condition corresponds to the time domain, 48 5 0 192 2. .R R R Dt Lct d+( )[ ] < <Ω ,
written in terms of characteristic resistances, or alternatively:
48 5 0 191 2
2. .D v R FA c E t L Dc
− +[ ] < <Ω d d (56)
written in terms of thermodynamic, kinetic, diffusion and ohmic parameters. Hence, determination
of the diffusion coefficient from the slope of a Cottrell straight line, using Eq. (8), is only possible
within a limited time range for very fast interfacial charge transfer kinetics (high vc value) and
negligible ohmic drop or IR compensation (low RΩ value).
In contrast, a typical Cottrell plot (current vs. time– /1 2 ) for the current transient caused by a
small-amplitude potential step is given in Fig. 12A, taking kinetic limitations by surface processes
and ohmic drop into consideration (Λ = 3). The plot of I t( ) vs. t– /1 2 (thick solid line) does not
show a linear dependence for short times (no Cottrell straight line for large t– /1 2 values), in
agreement with the predictions in Fig. 11, and therefore Eq. (8) cannot be used to determine
accurately the diffusion coefficient of the guest species.
However, Garcia-Jareño et al. proposed (see Fig. 3 in Ref. [10]) to evaluate an apparent
diffusion coefficient ( Dap ) from the slope of the tangent line (dashed line) in Fig. 12A, using
Eq. (4) and setting the slope of the tangent line equal to ∆Q D Lap π . The Cottrell straight line,
with slope ∆Q D Lπ , is also plotted in Fig. 12A (thin solid line) for the sake of comparison.
On the other hand, Levi et al. noted in Figs. 6(b) and 7(c) of Ref. [9] that the Cottrell function
plot, I t t t( ) vs. log , is expressed experimentally by a shallow peak rather than a horizontal
straight line in the short-time range and taken the peak value of I t t( ) equal to ∆Q D Lap π as
indicated in Fig. 12B of this paper where the characteristic time-invariant function,
I t t Q D LCottrell( ) = ∆ π , is also plotted for comparison.
- 25 -
Despite the different graphical representations in the papers by Levi et al. [9] and Garcia-Jareño
et al. [10], the approximation used by the above authors to determine the apparent diffusion
coefficients of guest species is the same. Moreover, the diffusion coefficient is underestimated
using Eq. (8) and replacing the characteristic time-invariant function, I t tCottrell( ) , by the slope of
the tangent line in Fig. 12A or the peak value of the function in Fig. 12B. The ratio of the apparent
diffusion coefficient to the exact value of D is given by:
D D I t t I t tap max Cottrell= ( )( ) ( )( )[ ]2(57)
This ratio depends only on the dimensionless parameter Λ and is plotted vs. log Λ in Fig. 13A.
Less than 5 % relative error on D is predicted provided Λ > 11 (fast charge transfer kinetics). In
contrast, the determination error taken in absolute value increases rapidly when Λ decreases due to
slow insertion reaction kinetics and/or large ohmic drop.
The Λ value for a given electrode depends on the insertion isotherm type (Langmuir, Frumkin
or other isotherm), the initial potential of potential step, the insertion reaction rate constant, the
diffusion coefficient of guest species, the film, foil or particle thickness in Figs. 1A and B, and the
presence of ohmic drop in the electrolyte, bulk material, etc. However, considering Eq. (20), Λ can
be estimated from experimental values of the diffusion resistance, charge transfer resistance and
electrolyte and/or substrate resistances measured on an impedance diagram plotted for the same
potential range, as shown in Fig. 13B. The corresponding error for the diffusion coefficient, when
using the approximation proposed by Levi et al. [9] and Garcia-Jareño et al. [10], is then given in
Fig. 13A. For example, Λ = 3, which corresponds to the dashed line in Fig. 13A and the impedance
diagram of Fig. 13B, gives a relative error of ε = – 26 % for the diffusion coefficient.
4.2. Determination of D from a logcurrent vs. time plot
The diffusion coefficient of a guest species can be determined alternatively from the slope and
intercept of the straight line observed when plotting log current vs. time for sufficiently long
times. The intercept ( Int ,ltI ) and slope (Sl ,ltI ), for this line, are given from Eq. (43) by:
Int ,ltd
IQ
b=
+ +( )
log 22
212
∆τ
ΛΛ Λ
(58)
and:
Sl ,ltd
Ib= − 1
2
10τ ln(59)
- 26 -
Eqs. (58) and (59) should be solved together with the equation:
b b1 1 0tan − =Λ (60)
to determine Λ , τ d and therefore D, provided the diffusion length is known independently and Λ
is not too small. In contrast, if Λ takes on a very low value, due to slow interfacial charge transfer
kinetics and/or large ohmic drop, we have b1 = Λ and b v L R FA v12 1τ d c E= ( ) +( )Ω from
Eqs. (25) and (30), respectively, so the diffusion coefficient cannot be obtained from Eqs. (58) to
(60).
A portion of straight line is predicted for a log current vs. time plot, in the time domain
indicated in Fig. 11 (less than 1 % deviation in Eq. (29) from Eq. (43)), whether diffusion control
(Eq. (41)), charge transfer and/or ohmic drop control (Eq. (42)) or mixed control conditions
(Eq. (43)) are satisfied for insertion processes. Hence, Eq. (43) and Eqs. (58) to (60) derived in
this paper should be used rather than the usual Eqs. (5), (9) and (10) to fit PSCA data in the long-
time domain. The use of the latter equations give only apparent values of the diffusion coefficient
and the ratio of Dap to the exact value of D is calculated as:
D D bap = 4 12 2π (61)
and:
D D bap = + +( )Λ Λ Λ2 212 (62)
considering respectively the slope and intercept of the straight line. The diffusion coefficient ratio
depends only on the dimensionless parameter Λ and is plotted vs. log Λ in Figs. 14A and B. Less
than 5 % relative error on D is predicted provided Λ > 38 (or 21) using the slope (or intercept) of
the straight line, which corresponds to very fast insertion kinetics and very low ohmic drop. The
error increases rapidly in absolute value when Λ decreases. For example, the relative error on D
predicted for Λ = 3, which corresponds to the dashed lines in Fig. 14 and the impedance diagram
of Fig. 13B, is equal to ε = – 42 % and ε = – 33 % from Figs. 14A and B, respectively.
The problem in the determination of D from the slope of a log I t( ) vs. time plot in the long-
time range was pointed out first by Chen [29] for hydrogen absorption in thin foils of Pd and Pd
alloys, to the best of our knowledge. Chen observed that the diffusion coefficient of hydrogen
determined from Eq. (10) disagreed with the values obtained from EIS data. This was the starting
point of our previous theoretical work [19]. Lundqvist and Lindberg [30] discussed more recently
- 27 -
the same problem for diffusion of hydrogen inside spherical particles of hydrogen absorbing
alloys.
4.3. Determination of D by current vs. time curve fitting
The more general way to determine the diffusion coefficients of guest species from
experimental chronoamperograms is to use Eqs. (25) and (29) and a curve fitting procedure with
adjustable parameters Λ and τ d = L D2 , from which D can be obtained. Such a procedure was
used by Chen [29] to study hydrogen absorption in α phase Pd-H and Pd alloy-H electrodes. The
hydrogen concentration and the diffusion coefficient of this species determined by curve fitting
were in very good agreement with the values obtained from EIS data.
Levi et al. [9] indicated that lithium-ion insertion into Li Co Ni Ox 0.2 0.8 2 in the potential range of
3.65 to 4.05 V vs. Li+Li proceeds via the formation of a solid solution. They calculated the
apparent diffusion coefficient of lithium-ion vs. electrode potential from PSCA data using Eq. (8)
above where the time-invariant Cottrell function, I t tCottrell( ) , is replaced by the peak value
I t t( )max
as indicated in Fig. 12B. Under the above conditions, Dap is underestimated with
respect to D as discussed in Section 4.1. We therefore decided to check whether or not the
experimental results of Levi et al. can be fitted by Eqs. (25) and (29) derived in this work.
Experimental data taken from Fig. 6(b) in Ref. [9] are plotted in Fig. 15 of this paper for a
potential step from 3.70 to 3.73 V vs. Li+Li, using the Cottrell function representation of the
current transient, I t t t( ) vs. log . Fig. 15A shows that the experimental results obtained by Levi et
al. are not fitted very well by the theoretical model assuming restricted linear diffusion conditions
and limitations by insertion reaction kinetics and/or ohmic drop. Therefore, from Eq. (11), we
predict that EIS data collected for the same material cannot be fitted in the low frequency range to
the theoretical expression for the restricted (finite space) diffusion impedance in Eqs. (13)
and (14). This was observed by Levi and Aurbach for lithium-ion insertion in thin graphite
electrodes (see Figs. 13 and 14 in Ref. [6]).
Despite the fact that the potential step amplitude, ∆E = 30 mV in the work by Levi et al. [9] and
in Fig. 15 of this paper, does not satisfy the small-signal condition, ∆E RT F<< , and therefore the
diffusion coefficient of lithium-ion cannot be considered strictly constant in this potential range,
deviation from Eq. (29) is due mainly to long-time experimental data (compare Figs. 15A and B)
and is related probably to the geometry of diffusion in graphite particles and/or the distribution of
- 28 -
particle size and therefore diffusion length in the composite electrode. This will be investigated in
the second and third parts of this work [16].
4.4. Determination of D from chronocoulometric data
Considering diffusion controlled processes, due to very fast insertion reaction kinetics and
negligible ohmic drop or IR compensation, the diffusion coefficient of a guest species can be
determined (i) from the slope ( Sl stQ, ) of the straight line predicted for short times ( t < 0 32. τ d) in a
Q t t( ) vs. plot (Cottrell plot for the charge), derived from Eq. (50) as:
DQ
LFA c
Q Q=
=
π πSl Slst st, ,
2 2
2 2
∆ ∆(63)
(ii) from the slope ( Sl ltQ, ) of the portion of straight line observed for long times ( t > 0 14. τ d) in a
log 1 − ( )[ ]Q t Q∆ vs. time plot, according to Eq. (51):
D L Q= 4 102 2ln ,Sl lt π (64)
and, more generally, over a larger time range (iii) using Eq. (48) or Eq. (49) and a curve fitting
procedure with adjustable parameter τ d = L D2 .
On the other hand, under mixed control conditions, D could be obtained from the slope and
intercept of the portion of straight line predicted for long times in a log 1 − ( )[ ]Q t Q∆ vs. time plot.
From Eq. (55), the intercept and slope, for this line, are given by:
Int ltQb b
, log=+ +( )
2 2
12 2
12
ΛΛ Λ
(65)
and:
Sl ltQ b D L, ln= − ( )12 2 10 (66)
Eqs. (65) and (66) should be solved together with Eq. (60) to determine Λ and D, provided Λ is not
too small (no charge transfer and/or ohmic drop control).
More generally, chronocoulometric data could be compared with Eq. (55) using a curve fitting
procedure with adjustable parameters Λ and τ d .
5. CONCLUSION
In this paper, we have given five equivalent theoretical expressions for the Faradaic current
transient caused by a potential step, assuming linear diffusion of guest species in thin films, foils or
- 29 -
platelet particles of host material (in the latter case the potential gradient is neglected in the
composite electrode), restricted (blocking) diffusion conditions (Figs. 1A and B) and kinetic
limitations at the host material surface. Provided a direct (one-step) insertion reaction is assumed,
restricted linear diffusion satisfied, phase transition processes disregarded and ohmic potential
drop as well as double-layer charging current effects neglected, the current vs. time relationship can
be written as:
I tQ
bb t
nn
n
( ) exp –=+ + ( )
=
∞
∑22
2 22
1
∆τ
τd
dΛ
Λ Λ(A)
where bn is the nth positive root of the equation: b btan – Λ = 0 . The above expression includes
only two adjustable parameters: the diffusion time constant, τ d = L D2 , and the dimensionless
parameter, Λ = v mc , which compares the reaction rate constant and diffusion constant. A large Λ
value means a diffusion controlled rate; in contrast a small value of Λ is characteristic of control by
interfacial charge transfer kinetics. Mixed control conditions are achieved for intermediate values of
this parameter. Finally, the total amount of Faradaic charge passed following a potential step is
obtained by integration of the current with respect to time, assuming equilibrium for the insertion
reaction both at the initial and final times, as ∆Q I t t= ( )∞
∫ d0
. Alternative formulations of the above
equation have been derived in this paper in terms of electrical components of the equivalent circuit
for the electrode impedance in Eqs. (26) and (27), as well as in terms of thermodynamic, kinetic
and diffusion parameters in Eq. (28).
Eq. (A) applies either considering small-amplitude potential steps, irrespective of the insertion
isotherm type (Langmuir, Frumkin or other isotherm), the related kinetic equation (Butler-Volmer
or other relationship) and the dependence or not of the diffusion coefficient on the guest species
concentration and therefore on the electrode potential, or using larger potential steps provided the
diffusion coefficient is constant and the Langmuir isotherm applies for the insertion process. The
formation of an ideal solid solution, with no interaction in the host material, is assumed in the latter
case. The only difference between the two situations lies in the electrode potential where the partial
derivative vc is calculated. For a small potential step from E0 to E E E1 0= + ∆ , with ∆E RT F<<, the partial derivative is considered for the initial potential of potential step. In contrast, vc is
calculated for the applied potential when considering larger potential steps.
Setting Λ → ∞ in Eq. (A), we obtain the well-known diffusion law in thin film materials for
diffusion controlled processes and restricted linear diffusion conditions [2, 4]:
I tQ
nt
d ( ) exp – ( – )=
∞
∑2 2 1 22∆
τπτ
(B)
- 30 -
and the two limiting relationships satisfied respectively for short and long times respectively:
I tQ
td std
( ) = ∆π τ
(C)
and:
I tQ t
d ltd d
( ) exp –=
24
2∆τ
πτ
(D)
Accurate determination of the diffusion coefficient of a guest species from the linear part of a
Cottrell plot (current vs. time–1/2) in the short time domain or a semi-logarithmic plot
( log current vs. time) in the long time domain, using respectively Eqs. (C) and (D) to fit
experimental data, requires (i) very fast charge transfer kinetics at the interfaces, (ii) very low
double-layer charging current compared to the Faradaic current, (iii) negligible ohmic drop or IR
compensation, (iv) no or negligible film resistance (or more generally impedance) on the electrode
surface due to passivation layers (on graphite doped by lithium for example), and finally (v) no
phase transition processes.
Under the above conditions, the electrode impedance is close to the diffusion impedance which
is characteristic of restricted linear diffusion. Experimental observation of more complicated
impedance diagrams for insertion materials, due to ohmic drop, charge transfer limitations,
presence of superficial passivation layers, radial diffusion with cylindrical or spherical symmetry,
particle size distribution in composite electrodes, porous electrode effects or phase transition
processes should indicate that the diffusion model in Eqs. (B) to (D), which is widely used in the
electrochemical literature to fit experimental data, cannot accurately represent potential step
chronoamperometric data obtained for the same materials. Hence, there is an advantage to the
simultaneous application of PSCA and EIS methods for the characterization of ion-insertion
materials.
In contrast to Eq. (B), Eq. (A) applies whether diffusion, interfacial charge transfer or mixed
control conditions are satisfied experimentally. In addition, considering small-amplitude potential
steps, typically when ∆E RT F<< , this equation can be extended to cover the case where ohmic
drop is present by setting Λ = +( )R R Rd ctΩ where the charge transfer resistance Rct , the
diffusion resistance Rd , and the resistance RΩ related to ohmic drop in the electrolyte, the host
material, etc., can be obtained from an impedance diagram plotted at the initial potential of potential
step.
Using small potential steps and considering single-phase materials and/or potential domains,
- 31 -
the dimensionless parameter Λ in Eq. (A) is the key factor for the kinetics of insertion processes
studied by the PSCA method. The general expression for this parameter is written in terms of
partial derivatives of insertion reaction rate with respect to electrode potential and interfacial
concentration of guest species, both evaluated at the initial potential E0 , as:
Λ =+
v L D
R FA vc
E1 Ω
(E)
The Λ value for PSCA experiments depends on the insertion isotherm type (Langmuir, Frumkin or
other isotherm), the initial potential of potential step, the reaction rate constant which is included in
the partial derivatives, the diffusion coefficient of guest species, the film, foil or particle thickness in
Figs. 1A and B, and the presence of ohmic drop in the electrolyte, bulk material, etc.
An important feature of Eq. (A) is that additional resistances, i.e. electrolyte, bulk material and
substrate resistances, superficial film resistances and interfacial charge transfer resistance,
depending on the electrochemical system considered, severely distort the shape of the current
transient as well as the Cottrell function plot, I t t t( ) vs. log , in the short-time domain, thus
masking the expected responses for diffusion controlled processes, as envisaged by Levi et al. [6,
9], but the current is also largely affected in the long-time domain by slow charge transfer kinetics
and/or ohmic drop. Under the above circumstances, the effects of slow ion-transfer kinetics at the
host materialelectrolyte interface, as well as slow electron-transfer kinetics at the host
materialsubstrate (or current collector) interface, cannot be distinguished from ohmic drop effects.
In contrast, ohmic drop effects and kinetic limitations by interfacial charge transfer can be
discriminated using the EIS method and the Nyquist representation of impedance diagrams.
For long-time experiments, only the first term of the series in Eq. (A) is considered, so the
current taken in absolute value decreases exponentially with increasing time according to:
I tQ
bb t( ) exp –lt
dd=
+ +( ) ( )22
212 1
2∆τ
τΛΛ Λ
(F)
Hence, experimental observation of an exponential decay of current with respect to time, in the
long-time range, is not a sufficient condition for predicting a diffusion controlled rate for insertion
processes in thin films, foils or particles of host materials. It follows that a log I t( ) vs. t plot
should be linear for long times whether diffusion, charge transfer, ohmic drop or mixed control by
diffusion and interfacial charge transfer and/or ohmic drop is satisfied experimentally.
The validity domains for the Cottrell current in Eq. (C) and the exponential decay of current vs.
time in Eq. (F) are visualized in Fig. 11 of this paper in terms of the dimensionless parameter Λ
and dimensionless time t τ d .
- 32 -
Considering experimental PSCA or PSCC data obtained under restricted linear diffusion
conditions, deviation from diffusion controlled processes and the usual Eq. (B), due to limitations
by insertion reaction kinetics and/or ohmic drop, can be characterized from (i) the presence of a
maximum in a I t t t t( ) vs. or log plot as well as in a Q t t t t( ) vs. or log plot, i.e. using the
Cottrell function representation for current and charge, respectively, (ii) the absence of a portion of
straight line in a I t t( ) vs. 1 plot (usual Cottrell plot) for short times (large 1 t values), (iii) the
presence of an inflection point in a Q t t( ) vs. plot (Cottrell plot for the charge) and finally, (iv)
from the value of the slope of a log logcurrent vs. time plot, i.e. − < ( ) <1 2 0d dlog logI t t ,
measured for short times.
We also predicted in this work the errors in the determination of the diffusion coefficients of
guest species due to limitations by surface reaction kinetics and/or ohmic drop when using the
methods proposed in the electrochemical literature and based on the slope of the tangent line in a
Cottrell plot, I t t( ) vs. – /1 2, the peak value of the Cottrell function plot, I t t t( ) vs. log , and finally
the slope and intercept of a semi-logarithmic plot, log .I t t( ) vs . In all cases, the apparent diffusion
coefficient obtained using the limiting Eqs. (C) and (D) instead of the more general equations
given in this paper is underestimated with respect to the exact value of D. In addition, we envisaged
the possibility for determining D from chronocoulometric data using a Cottrell plot for the charge,
Q t t( ) vs. , in the short-time domain, or a semi-logarithmic plot, log 1 − ( ) ∞( )[ ]Q t Q vs. time, in
the long-time domain.
The more general way to determine the diffusion coefficients of guest species from expe-
rimental chronoamperograms obtained for small-amplitude potential steps (as well as large
potential steps if D is constant with respect to the electrode potential, Langmuir isotherm conditions
are satisfied for the insertion process and ohmic drop effects can be disregarded) is to use Eq. (A)
and a curve fitting procedure with adjustable parameters Λ and τ d = L D2 , from which D can be
obtained provided the diffusion length L is known independently. Alternatively, the electrical
charge can be measured vs. time and compared to the following expression with the same
adjustable parameters, Λ and τ d , as above:
Q t Qb b
b tn n
n
n
( ) = ∞( )+ +( ) ( )
=
∞
∑1 22
2 2 22
1
– exp –Λ
Λ Λτ d (G)
It should be noted that the theoretical derivations in this paper are based on a simple geometric
model for insertion and diffusion processes in thin film electrodes and particles schematized in
Fig. 1. Real cases will certainly be more complex and the derivation of diffusion coefficients more
difficult. Complications with respect to ideal conditions may be encountered for insertion
- 33 -
processes in relation to the geometry of diffusion in host materials and the distribution of diffusion
lengths in electroactive particles of composite electrodes. This will be dealt with respectively in the
second and third parts of this series [16].
Finally, the ‘cell-impedance controlled diffusion’ model presented recently by Shin and Pyun
[8] and used by Shin et al. [31] to fit experimental data for lithium-ion insertion in transition metal
oxides is an alternative to the theoretical derivation in this work. The two models will be compared
in a separate paper [32].
Acknowledgments
Thanks are due to J.-P. Diard for his help in using Mathematica software.
- 34 -
APPENDIX A
The insertion reaction for cations can be written formally as:
M e M , e+ − + −+ + ↔ (A.1)
where M+ , and M , e+ − denote respectively a cation in the electrolyte solution, the insertion
site in the host material and the intercalated species. Assuming Langmuir isotherm conditions
(formation of an ideal solid solution) for the insertion process and a constant concentration ( cM+ )
in the electrolyte solution, the reaction rate is given by:
v t K t c c c t K t c t( ) = ( ) − ( )[ ] − ( ) ( )r M max o+ 0 0, , (A.2)
where c t0,( ) is the guest species concentration at the interface (x = 0, Fig. 1), cmax the maximal
(saturation) concentration, and K to( ) and K tr ( ) denote the rate constants in the direction of
oxidation and reduction, respectively, with:
K t k fE to o o( ) = ( )[ ]exp α , K t k fE tr r r( ) = − ( )[ ]exp α (A.3)
where E t( ) is the electrode potential, f F RT= ( ) and the symmetry factors for charge transfer
satisfy α αo r+ = 1.
E* denotes below the equilibrium potential corresponding to the constant concentrations cM+
in the electrolyte and cmax 2 in the host material. The formal rate constant, k* cms 1− , is given by:
k k fE k c fE* * *exp exp= ( ) = −( )o o r M r+α α (A.4)
and the reaction rate can be rewritten from Eqs. (A.2) to (A.4), setting:
ξ t f E t E( ) = ( ) −[ ]* (A.5)
as:
v t k c c t t c t t( ) = − ( )[ ] − ( )[ ] − ( ) ( )[ ] * , exp , expmax r o0 0α ξ α ξ (A.6)
The partial derivatives of reaction rate with respect to interfacial concentration of guest species
and electrode potential, both evaluated at the initial potential E0 , are calculated as:
- 35 -
v kc = − −( ) +( )* exp expα ξ ξr 0 01 (A.7)
v f k c c cE = − −( ) −( ) +[ ]* exp expα ξ α α ξr r max o0 0 0 0 (A.8)
where:
ξ0 0= −( )f E E* (A.9)
and, due to the assumption of Langmuir isotherm conditions:
c c0 01= +( )max expξ (A.10)
From Eqs. (A.8) and (A.10), we obtain:
v f k cE = −−( )[ ]
+* exp
expmaxr1
10
0
α ξξ
(A.11)
and the theoretical expression for the dimensionless parameter Λ, under Langmuir isotherm
conditions for the insertion process, is finally derived from Eqs. (30), (A.7) and (A.11) as:
Λ =( ) −( ) +( )
+ −( )[ ] +( )k L D
R f FAk c
*
*
exp exp
exp exp
α ξ ξα ξ ξ
r
max r
0 0
0 0
1
1 1 1Ω
(A.12)
Taking cM
1+ mol L= −1 (standard concentration in the electrolyte solution) for the sake of
simplification, E* is the standard (formal) potential E°, k* in Eq. (A.4) is the standard rate
constant k°, and Eq. (31) in the text is obtained from Eq. (A.12).
- 36 -
APPENDIX B. NOMENCLATURE
Abbreviations
EIS Electrochemical impedance spectroscopy.
Int Intercept.
PITT Potentiostatic intermittent titration technique.
PSCA Potential step chronoamperometry.
PSCC Potential step chronocoulometry.
Sl Slope.
Subscripts
ct Related to charge transfer.
d Related to diffusion.
dl Double layer.
F Faradaic.
I Related to current.
lt Long time.
Q Related to charge.
st Short time.
vst Very short time.
Ω Related to ohmic drop.
Roman letters
A Interfacial surface area.
bn nth positive root of the equation: b btan − =Λ 0 .
c Guest species concentration.
c0 Equilibrium concentration at the initial potential E0 .
c1 Equilibrium concentration at the applied potential E1.
cmax Maximal (saturation) concentration in the host material.
c° Standard concentration in the solid solution: c c° = max 2 .
Cdl Differential (double-layer) capacitance.
D Diffusion coefficient.
Dap Apparent diffusion coefficient.
- 37 -
E Electrode potential.
E0 Initial potential.
E1 Applied potential.
E° Standard potential.
E* Formal potential.
f f F RT= ( ).
F Faraday constant.
I Faradaic current.
Id Diffusion current.
ICottrell Semi-infinite linear diffusion current.
J Diffusion flux of guest species.
k° Standard rate constant.
k* Formal rate constant.
L Film thickness (Fig. 1A), or foil or particle half-thickness (Fig. 1B).
m Diffusion constant for linear diffusion: m D L= .
Q Faradaic charge.
QCottrell Faradaic charge related to the Cottrell current.
Qd Faradaic charge related to the diffusion current.
R Perfect gas constant.
Rct Charge transfer resistance.
Rd Diffusion resistance.
Rs Electrolyte solution resistance.
RΩ Sum of ohmic resistances.
s Laplace complex variable.
t Time variable.
T Absolute temperature.
v Insertion reaction rate.
vc Partial derivative: v v cc E= ∂ ∂( ) .
vE Partial derivative: v v EE c= ∂ ∂( ) .
x Space variable.
y Insertion level: y c c= max .
Z Electrode impedance.
Zd Diffusion impedance.
ZF Faradaic impedance.
Greek letters
α α phase material.
- 38 -
αo Symmetry factor for charge transfer in the direction of oxidation.
αr Symmetry factor for charge transfer in the direction of reduction: αo + αr = 1.
∆c Variation of guest species concentration due to a potential step: ∆c c c= −1 0 .
∆E Potential step amplitude: ∆E E E= −1 0.
∆Q Total amount of Faradaic charge passed following a potential step: ∆Q Q= ∞( ) .
∆Qd ∆Q for diffusion controlled processes.
Λ Key parameter for the kinetics of insertion processes in Eqs. (20) and (30).
τ d Time constant for linear diffusion: τ d = L D2 .
ξ Dimensionless potential: ξ = − °( )f E E .
ξ0 Dimensionless initial potential: ξ0 0= − °( )f E E .
ξ1 Dimensionless applied potential: ξ1 1= − °( )f E E .
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[25] C. Montella, J. Electroanal. Chem. 462 (1999) 73.
- 40 -
[26] J. Crank, The Mathematics of Diffusion, 2nd edition, Clarendon Press, Oxford, 1975, p. 60.
[27] A.J. Bard, L.R. Faulkner, Électrochimie, Principes, Méthodes et Applications, Masson, Paris,
1983, p. 185.
[28] IUPAC, M. Sluyters-Rehbach (ed.), Pure & Appl. Chem. 66 (1994) 1831.
[29] J.S. Chen, Thesis, Grenoble, 1992.
[30] A. Lundqvist, G. Lindbergh, J. Electrochem. Soc. 145 (1998) 3740.
[31] H.-C. Shin, S.-I. Pyun, S.-W. Kim, M.-H. Lee, Electrochim. Acta 46 (2001) 897.
[32] C. Montella, in preparation.
Figure captions
Fig. 1: Schematic representation of ion-insertion and diffusion processes, and examples of
concentration profiles, c x t x,( ) vs. at a time t, in thin film electrodes, under restricted linear
diffusion conditions. (A) Thin film, of thickness L, deposited on a substrate impermeable to the
diffusing species. (B) Thin foil or platelet particle, of thickness 2L, symmetrically submitted to
insertion on both sides. Arrows indicate the directions for ion transfer through the interfaces.
Fig. 2: Dimensionless representations of the current transient caused by a potential step for
diffusion controlled processes and restricted linear diffusion conditions. (A) Current vs. time curve
calculated from Eqs. (1) and (2). (B) Ratio of the diffusion current to the limiting Cottrell Eq. (4)
plotted vs. the decimal logarithm of time (solid line). (C) Cottrell plot of the current transient (solid
line) and limiting Cottrell relationship (dashed line) plotted from Eq. (4). (D) Decimal logarithm of
current plotted vs. time (solid line) and asymptotic straight line (dashed line) plotted from Eq. (5).
Fig. 3: Dimensionless representations of the current transient caused by a potential step for
diffusion controlled processes and restricted linear diffusion conditions. (A) Current vs. time curve
calculated from Eqs. (1) and (2). (B) Logarithm of current plotted vs. logarithm of time (solid line)
and same representation of the Cottrell relationship from Eq. (4) (dashed line). (C) Derivative of
the curve in (B) plotted vs. logarithm of time (solid line). (D) Derivative of the curve in (B) plotted
- 41 -
vs. time (solid line). The asymptotic straight line (dashed line) satisfied for long times is plotted
from Eq. (7).
Fig. 4: Evolution of normalized concentration profile vs. time calculated from Eqs. (25) and (33)
for Λ = 103 (diffusion controlled processes) and t τ d = 0.002 (a), 0.01, 0.025, 0.05, 0.1 (e), 0.2,
0.3, 0.4, 0.5, 0.7, 1 (k).
Fig. 5: Evolution of normalized concentration profile vs. time calculated from Eqs. (25) and (33)
for Λ = −10 2 (rate control by insertion reaction kinetics and/or ohmic drop) and t τ d = 10 (a), 30,
50, 70, 90 (e), 110, 130, 150, 170, 190, 210, 230 (1).
Fig. 6: Evolution of normalized concentration profile vs. time calculated from Eqs. (25) and (33)
for Λ = 3 (mixed control by diffusion and insertion reaction kinetics and/or ohmic drop) and
t τ d = 0.002 (a), 0.01, 0.025, 0.05, 0.1 (e), 0.2, 0.3, 0.4, 0.5, 0.7, 1, 1.5 (l).
Fig. 7: Influence of interfacial charge transfer kinetics and/or ohmic potential drop on the Faradaic
current transient caused by a potential step, under restricted linear diffusion conditions, using the
same dimensionless representations as in Fig. 2. The current is calculated from Eqs. (25) and (29)
and plotted in dimensionless form for Λ = 0.25, 0.5, 1, 2, 5 and very large values (∞). (A) Current
vs. time curve. (B) Ratio of the Faradaic current to the limiting Cottrell Eq. (4) plotted vs. the
decimal logarithm of time (solid lines). (C) Cottrell plot of the current transient (solid lines) and
limiting Cottrell equation (dashed line) plotted from Eq. (4). (D) Decimal logarithm of current
plotted vs. time (solid lines) and asymptotic straight lines (dashed lines) plotted from Eqs. (25) and
(43).
Fig. 8: Influence of interfacial charge transfer kinetics and/or ohmic potential drop on the Faradaic
current transient caused by a potential step, under restricted linear diffusion conditions, using the
same dimensionless representations as in Fig. 3. The current is calculated from Eqs. (25) and (29)
and plotted in dimensionless form for Λ = 0.25, 0.5, 1, 2, 5 and very large values (∞). (A) Current
vs. time curve. (B) Logarithm of current plotted vs. logarithm of time. (C) Derivatives of the curves
in (B) plotted vs. logarithm of time. (D) Derivatives of the curves in (B) plotted vs. time (solid
lines). The asymptotic straight lines (dashed lines) are plotted from Eqs. (25) and (44).
Fig. 9: Dimensionless representations of the Faradaic charge variation due to a potential step for
diffusion controlled processes under restricted linear diffusion conditions. (A) Charge vs. time
curve plotted from Eq. (48) or (49). (B) Charge referred to the Cottrell relationship in Eq. (50) and
- 42 -
plotted vs. the decimal logarithm of time (solid line). (C) Cottrell plot of the Faradaic charge (solid
line) and limiting straight line (dashed line) plotted for short times from Eq. (50). (D) Logarithm of
1 − ( )Q t Qd ∆ plotted vs. time (solid line) and asymptotic straight line (dashed line) plotted from
Eq. (51).
Fig. 10: Influence of interfacial charge transfer kinetics and/or ohmic potential drop on the
Faradaic charge variation caused by a potential step, under restricted linear diffusion conditions,
using the same dimensionless representations as in Fig. 9. The charge is calculated from Eqs. (25)
and (52) and plotted in dimensionless form for Λ = 0.1, 0.2, 0.5, 1, 2, 5, 10 and very large values
(∞). (A) Charge vs. time curve. (B) Charge referred to the Cottrell relationship in Eq. (50) and
plotted vs. the decimal logarithm of time (solid lines). (C) Cottrell plot of the Faradaic charge (solid
lines) and limiting straight line (dashed line) for short times plotted from Eq. (50). (D) Logarithm
of 1 − ( )Q t Q∆ plotted vs. time (solid lines) and asymptotic straight lines (dashed lines) plotted
from Eqs. (25) and (55).
Fig. 11: Validity domains for (less than 1 % deviation from) the Cottrell current in Eq. (4) and the
exponential decay of current vs. time in Eq. (43), determined from Eqs. (25) and (29).
Fig. 12: Principles for the determination of the apparent diffusion coefficients of guest species in
host materials used in Refs. [9, 10]. (A) Cottrell plot of the Faradaic current obtained from
Eqs. (25) and (29) (thick solid line), tangent line (dashed line) and Cottrell straight line (thin solid
line) plotted for Λ = 3, ∆Q = 50 mC and τ d s= 500 . (B) Cottrell function plot for the current
transient (thick solid line) vs. the decimal logarithm of time, using the same parameter values as
above. The maximal value of this function is compared to the characteristic time-invariant function
I t tCottrell( ) (thin solid line).
Fig. 13: (A) Error in the determination of the diffusion coefficient of a guest species due to slow
charge transfer kinetics and/or ohmic potential drop when using Eq. (8) and the slope of the
tangent line in Fig. 12A or the peak value of the function in Fig. 12B instead of the characteristic
time-invariant function I t tCottrell( ) in Eq. (4). The ratio of the apparent diffusion coefficient to the
exact value of D is plotted vs. the decimal logarithm of the dimensionless parameter
Λ = +( )R R Rd ctΩ . (B) Example of impedance diagram plotted using the Nyquist representation
for R R RΩ = =ct d 6 and therefore Λ = 3, assuming that the differential (double-layer) capacitance
is very low compared to the insertion capacitance of the host material. Characteristic angular
frequencies and resistances are given in the graph. Additional impedances due to superficial films
on the host material (e.g. for lithium-ion insertion into graphite) are omitted in the impedance
diagram for the sake of simplicity.
- 43 -
Fig. 14: Ratio of the apparent diffusion coefficient to the exact value of D given as a function of
log Λ when using the slope (A) and intercept (B) of the straight line ( log .I t t( ) vs ) observed in the
long-time range and the usual relationships in Eqs. (5), (9) and (10) instead of the more general
Eq. (43) and Eqs. (58) to (60) derived in this paper.
Fig. 15: Experimental data (•) taken from Fig. 6(b) in Ref. [9] for lithium-ion insertion in
Li Co Ni Ox 0.2 0.8 2 and a potential step from 3.70 to 3.73 V vs. Li Li+ , plotted using the Cottrell
function representation of the current transient ( I t t t( ) vs. log ) and compared to the model in
Eqs. (25) and (29) of this paper for restricted linear diffusion conditions with limitations by
surface reaction kinetics and/or ohmic drop. Best fit parameter ( Λ and dτ ) values correspond to the
solid lines. (A) Data fit over the whole time domain. (B) Data fit limited to the short-time range.
A B
0
elec
trol
yte
elec
trol
yte
L 2L
c(x, t)elec
trol
yte
0
subs
trat
e
L
c(x, t)
hostmaterial
host material
Figure 1
- 44 -
0 2 40
.5
1
0 1-1
0
0 1 20
1
2
-1 0 10
.5
1
t τ d
t τ d
log t τ d( )
1 t τ d
It
Qd
d2
()(
)∆
τI
tQ
dd
2()
()
∆τ
It
It
dC
ottr
ell
()()
log
It
Qd
d2
()(
)[
]∆
τ
A
0.5
B
C D
Figure 2
- 45 -
-2 -1 0 1
0
-1
0 0.25 0.5
0
-1
0 1 20
1
2
-2 -1 0 1
0
-1
-2
t τ d
t τ d
log t τ d( )
It
Qd
d2
()(
)∆
τ
log
It
Qd
d()
()
[]
2∆τ
log t τ d( )
dd
dlo
glo
gI
tt
()
dd
dlo
glo
gI
tt
()
–1/2 –1/2
A B
C D
Figure 3
- 46 -
0 10
1
x L
cx
tc
cc
,(
)−[
]−
()
01
0
a
e
k
Figure 4
0 10
1
x L
cx
tc
cc
,(
)−[
]−
()
01
0
a
e
l
Figure 5
0 10
1
x L
cx
tc
cc
,(
)−[
]−
()
01
0
a
e
l
Figure 6
- 47 -
0 2 40
.5
1
0 1
-1
0
0 1 20
1
2
-1 0 10
.5
1
t τ d
t τ d
log t τ d( )
1 t τ d
It
Q()
()
2d
∆τ
It
Q()
()
2d
∆τ
It
It
()()
Cot
trel
llo
gI
tQ
()(
)[
]2
d∆
τ
0.250.25
0.25 0.25
∞
11
1
0.5
∞
∞ ∞
C D
A B
Figure 7
- 48 -
-2 -1 0 1
0
-1
0 .5 1
0
-1
0 1 20
1
2
-2 -1 0 1
0
-1
-2
t τ d
t τ d
log t τ d( )
It
Q()
()
2d
∆τ
log
It
Q()
()
[]
2∆τ d
log t τ d( )
dd
log
log
It
t()
dd
log
log
It
t()
–1/2 –1/2
0.25
0.25
0.25
0.25
∞
1
1
1
∞
∞ ∞
A B
C D
Figure 8
- 49 -
0 1 2 30
.5
1
0 0.5 1
0
-1
0 1 2 30
.5
1
-1 0 1 20
.5
1
t τ d
Qt
Qd()
∆
Qt
Qt
dC
ottr
ell
()()
t τ d log t τ d( )
Qt
Qd()
∆
t τ d
log
1−
()[
]Q
tQ
d∆
A B
C D
Figure 9
- 50 -
0 1 2 3 40
.5
1
0 0.25 0.5
0
.2
.4
0 1 2 3 40
.5
1
-1 0 1 20
.5
1
t τ d
Qt
Q()
∆
Qt
Qt
()()
Cot
trel
lt τ d log t τ d( )
Qt
Q()
∆
0.1
0.1
∞
1
1
∞
∞
1
10
0.1
0.1
1
10∞
t τ d
log
1−
()[
]Q
tQ∆
A B
C D
Figure 10
- 51 -
-3 -2 -1 0 1-2
-1
0
1
2
3Cottrell domain
Eq. ( )4
Exponentialdecay
Eq. ( )43
b b1 1tan = Λ
Eq. ( )42 b1 ≈ Λ
Eq. ( )41
b1 2≈ π
log t τ d( )
log
Λ
Figure 11
0 0.2 0.40
0.2
0.4
0 1 2 3 40
0.5
1.0
1.5
log t s( )1 t s
It ()
mA
It
t()
mA
s12/
I t tCottrell ( )
I t t( )max
I tCottrell ( )
A B
Figure 12
-2 -1 0 1 20
0.2
0.4
0.6
0.8
1.0
log Λ
DD
ap
Re Z
–Im
Z
RΩ Rct Rd 3
3 88. τ d
1 R Cct dl( )
A B
Figure 13
- 52 -
-2 -1 0 1 20
0.2
0.4
0.6
0.8
1.0
-2 -1 0 1 20
0.2
0.4
0.6
0.8
1.0
log Λ
DD
ap
log Λ
DD
ap
A B
Figure 14
-1 0 1 2 30
0.5
1.0
-1 0 1 20
0.5
1.0
log t s( ) log t s( )
It
t()
mA
s1/2
A B
It
t()
mA
s1/2
Figure 15
- 53 -