Dipartimento di Matematica Applicata Università di Firenze Two-band models for electron transport...

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Dipartimento di Matematica Applicata Università di Firenze Two-band models for electron transport in semiconductor devices Kinetic Equations: direct and inverse Kinetic Equations: direct and inverse problems problems Mantova, May 15-17, 2005 Mantova, May 15-17, 2005 n. 1 di 42 KINETIC EQUATIONS: KINETIC EQUATIONS: Direct and Inverse Problems Direct and Inverse Problems Università degli Studi di Pavia Università degli Studi di Pavia (sede di Mantova) (sede di Mantova) Mantova Mantova May 15-17, 2005 May 15-17, 2005 Giovanni Frosali Dipartimento di Matematica Applicata “G.Sansone” [email protected] TWO-BAND MODELS FOR ELECTRON TRANSPORT IN SEMICONDUCTOR DEVICES

Transcript of Dipartimento di Matematica Applicata Università di Firenze Two-band models for electron transport...

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Dipartimento di Matematica Applicata Università di Firenze

Two-band models for electron transport in semiconductor devices

Kinetic Equations: direct and inverse problems Kinetic Equations: direct and inverse problems Mantova, May 15-17, 2005Mantova, May 15-17, 2005

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KINETIC EQUATIONS:KINETIC EQUATIONS:Direct and Inverse ProblemsDirect and Inverse Problems

Università degli Studi di Pavia (sede di Mantova)Università degli Studi di Pavia (sede di Mantova)Mantova Mantova

May 15-17, 2005May 15-17, 2005

Giovanni Frosali Dipartimento di Matematica Applicata “G.Sansone”

[email protected]

TWO-BAND MODELS FOR ELECTRON TRANSPORT IN SEMICONDUCTOR DEVICES

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University of Florence research group on semicoductor modeling

Dipartimento di Matematica Applicata “G.Sansone” Giovanni Frosali

Dipartimento di Matematica “U.Dini” Luigi Barletti

Dipartimento di Elettronica e Telecomunicazioni Stefano Biondini Giovanni Borgioli Omar Morandi

Università di Ancona Lucio Demeio

Scuola Normale Superiore di Pisa (Munster) Chiara Manzini

Others: G.Alì (Napoli), C.DeFalco (Milano), M.Modugno (LENS-INFM Firenze), A.Majorana(Catania), C.Jacoboni, P.Bordone et. al. (Modena)

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In the standard semiconductor devices, like the Resonant Tunneling Diode, the single-band approximation, valid if most of the current is carried by the charged particles of a single band, is usually satisfactory. Together with the single-band approximation, the parabolic-band approximation is also usually made. This approximation is satisfactory as long as the carriers populate the region near the minimum of the band.

SINGLE-BAND APPROXIMATIONSINGLE-BAND APPROXIMATION

Also in the most bipolar electrons-holes models, there is no coupling mechanism between energy bands which are always decoupled in the effective-mass approximation for each band and the coupling is heuristically inserted by a "generation-recombination" term.

Most of the literature is devoted to single-band problems, both from the modeling and physical point of view and from the numerical point of view.

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It is well known that the spectrum of the Hamiltonian of a quantum particle moving in a periodic potential is a continuous spectrum which can be decomposed into intervals called "energy bands". In the presence of external potentials, the projections of the wave function on the energy eigenspaces (Floquet subspaces) are coupled by the Schrödinger equation, which allows interband transitions to occur.

-2

-1

0

1

2

Ener

gy (

ev)

6050403020100Position (nm)

RITD Band Diagram The single-band approximation is no longer valid when the architecture of the device is such that other bands are accessible to the carriers. In some nanometric semiconductor device like Interband Resonant Tunneling Diode, transport due to valence electrons becomes important.

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Various mathematical tools are employed to exploit the multiband quantum dynamics underlying the previous models:• the Schrödinger-like models (Sweeney,Xu, etc.)

• the nonequilibrium Green’s function (Luke, Bowen, Jovanovic, Datta, etc.)

• the Wigner function approach (Bertoni, Jacoboni, Borgioli, Frosali, Zweifel, Barletti, etc.)

• the hydrodynamics multiband formalisms (Alì, Barletti, Borgioli, Frosali, Manzini, etc)

It is necessary to use more sophisticated models, in which the charge carriers can be found in a super-position of quantum states belonging to different bands.

Different methods are currently employed for characterizing the band structures and the optical properties of heterostructures, such as• envelope functions methods based on the effective mass theory (Liu, Ting, McGill, Chao, Chuang, etc.)

• tight-binding (Boykin, van der Wagt, Harris, Bowen, Frensley, etc.)

• pseudopotential methods (Bachelet, Hamann, Schluter, etc.)

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MULTI-BAND, NON-PARABOLIC ELECTRON TRANSPORTMULTI-BAND, NON-PARABOLIC ELECTRON TRANSPORT

• Wigner-function approach• Formulation of general models for multi-band non-parabolic electron transport

• Use of Bloch-state decomposition (Demeio, Bordone, Jacoboni)• Envelope functions approach (Barletti)• Wigner formulation of the two-band Kane model (Borgioli, Frosali, Zweifel)

• Numerical applications (Demeio, Morandi)

• The Wigner function for thermal equilibrium of a two-band (Barletti)

• Multiband envelope function models (MEF models) (Modugno, Morandi)

• Two-band hydrodynamic models (Two-band QDD equations) (Alì, Biondini, Frosali, Manzini)

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QUANTUM MECHANICS LEVELQUANTUM MECHANICS LEVEL

In this talk we present different Schrödinger-like models.

The first one is well-known in literature as the Kane model. The second, based on the Luttinger-Kohn approach, disregards the interband tunneling effect.

The third, recently derived within the usual Bloch-Wannier formalism, is formulated in terms of a set of coupled equations for the electron envelope functions by an expansion in terms of the crystal wave vector k (MEF model).

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Electromagnetic and spin effects are disregarded, just like the field generated by the charge carriers themselves. Dissipative phenomena like electron-phonon collisions are not taken into account.

The dynamics of charge carriers is considered as confined in the two highest energy bands of the semiconductor, i.e. the conduction and the (non-degenerate) valence band, around the point is the "crystal" wave vector. The point is assumed to be a minimum for the conduction band and a maximum for the valence band.

The physical environment

k0k 0k

where

The HamiltonianHamiltonian introduced in the Schrödinger equation is2

,2o o per

hH H V H V

m

where is the periodic potential of the crystal and an external potential.perV V

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KANE MODELKANE MODEL

The Kane model consists in a couple of Schrödinger-like equations for the conduction and the valence band envelope functions.

v x t( , )be the valence band envelope functionLet c x t( , ) be the conduction band electron envelope function and

• m is the bare mass of the carriers, • is the minimum (maximum) of the conduction (valence) band energy• P is the coupling coefficient between the two bands (the matrix element of the

gradient operator between the Bloch functions)

cE ( )vE, ,i iV E V i c v

cc

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Interband Tunneling: PHYSICAL PICTURE

Interband transition in the 3-d dispersion diagram.The transition is from the bottom of the conduction band to the top of the val-ence band, with the wave number becoming imaginary. Then the electron continues propagating into the valence band.

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Remarks on the Kane modelRemarks on the Kane model

• The envelope functions are obtained expanding the wave function on the basis of the periodic part of the Bloch functions evaluated at ,

( , ) ( , ),ikxn nb x t e u k x

,c v

0 0( ) ( ) ( )c c v vx x u x u 0, ,( ) (0, )c v c vu x u xwhere .

0k

• The external potential affects the band energy terms , but it does not appear in the coupling coefficient P .

• There is an interband coupling even in absence of an external potential.

• The interband coefficient P increases when the energy gap between the two bands increases (the opposite of physical evidence).gE

( )c vV VV

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This model is a model, i.e. the crystal momentum is used as a perturbation parameter of the Hamiltonian. The wave function is expanded on a different basis with respect to Kane model:

LUTTINGER-KOHN modelLUTTINGER-KOHN model

where n, n' are the band index and the bare electron mass.

As a result, if we limit ourselves to the two-band case, we have:

0m

k P k

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where are envelope functions in the conduction and valence bands, respectively and and are, respectively, the isotropic effective masses in the conduction and valence bands.

As it is manifest, disregarding the off-diagonal terms implies the achievement of two uncoupled equations for the envelope functions in the two bands. This means that the model, at this stage of approximation, is not able to describe an interband tunneling dynamics.

,c v*cm

*vm

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MMEEF MODEL F MODEL (Morandi, Modugno, Phys.Rev.B, 2005)

The MEF model consists in a couple of Schrödinger-like equations as follows.A different procedure of approximation leads to equations describing the intraband dynamics in the effective mass approximation as in the Luttinger-Kohn model, which also contain an interband coupling, proportional to the momentum matrix element P. This is responsible for tunneling between different bands induced by the applied electric field proportional to the x-derivative of V. In the two-band case they assume the form:

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*cm• (and ) is the isotropic effective mass

• and are the conduction and valence envelope functions• is the energy gap• P is the coupling coefficient between the two bands

*vm

c vgE

• Expansion of the wave function on the Bloch functions basis

• Insert in the Schrödinger equation

Which are the steps to attain MEF model formulation?

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• Approximation

• Simplify the interband term in

• Introduce the effective mass approximation

• Develope the periodic part of the Bloch functions to the first order

• The equation for envelope functions in x-space is obtained by inverse Fourier transform

( , )nu k x

0k

See: Morandi, Modugno, Phys.Rev.B, 2005

Vai a lla 19

For more rigorous details:For more rigorous details:

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More rigorously MEF model can be obtained as follows:

• projection of the wave function on the Wannier basis which depends on where are the atomic sites positions, i.e.ix R iR

Wn

where the Wannier basis functions can be expressed in terms of Bloch functions as

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The use of the Wannier basis has some advantages.

As a matter of fact the amplitudes that play the role of envelope functions on the new basis, can be obtained from the Bloch coefficients by a simple Fourier transform

( )n iR

Moreover they can be interpreted as the actual wave function of an electron in the n-band. In fact, ''macroscopic'' properties of the system, like charge density and current, can be expressed in term of averaging on a scale of the order of the lattice cell.

( )n iR

Performing the limit to the continuum to the whole space and by using standard properties of the Fourier transform, equations for the coefficients are achieved.( )n x

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• The envelope functions can be interpreted as the effective wave functions of the electron in the conduction (valence) band

• The coupling between the two bands appears only in presence of an external (not constant) potential

• The presence of the effective masses (generally different in the two bands) implies a different mobility in the two bands.

• The interband coupling term reduces as the energy gap increases, and vanishes in the absence of the external field V.

c v,

gE

Comments on the MEF MODELComments on the MEF MODEL

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QUANTUM HYDRODYNAMICS LEVELQUANTUM HYDRODYNAMICS LEVEL

From the point of view of practical applications, the approaches based on microscopic models are not completely satisfactory.

Hence, it is useful to formulate semi-classical models in terms of macroscopic variable. Using the WKB method, we obtain a system for densities and currents in the two bands.

In this context zero and nonzero temperatures quantum drift quantum drift diffusion modelsdiffusion models are derived, for the Kane and MEF systems.

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Hydrodynamic version of the KANE MODELHydrodynamic version of the KANE MODEL

We can derive the hydrodynamic version of the Kane model using the WKB method (quantum system at zero temperature).

Look for solutions in the form

we introduce the particle densitiesThen is the electron density in conduction and valence bands.

We write the coupling terms in a more manageable way, introducing the complex quantity

with

c c v vn

( , )( , ) ( , ) exp c

c c

iS x tx t n x t

( , )( , ) ( , ) exp v

v v

iS x tx t n x t

: icv c v c vn n n e : c vS S

( , ) ( , ) ( , ).ij i jn x t x t x t

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Quantum hydrodynamic quantities

• Quantum electron current densities

when i=j , we recover the classical current densities

• Complex velocities given by osmotic and current velocities, which can

be expressed in terms of plus the phase difference

• Osmotic and current velocities

c c cJ n S

Im( )ij i jJ

v v vJ n S

, , , ,c os c el c v os v el vu u iu u u iu

, ,, , ,i ios i el i i

ii

n Ju u S i c v

nn

, , ,c v c vn n J J

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The quantum counterpart of the classical continuity equation

Taking account of the wave form, the Kane system gives rise to

Summing the previous equations, we obtain the balance law

where we have used the “interband density” and the complex velocities

, ,(cos sin )( )c v cv v c v os v el vn u n n i u iu

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The previous balance law is just the quantum counterpart of the classical continuity equation. Next, we derive a system of coupled equations for phases , obtaining an equivalent system to the coupled Schrödinger equations. Then we obtain a system for the currents

(similar equation for ). JvThe left-hand sides can be put in a more familiar form with the quantum Bohm potentials

,c vS S

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We express the right-hand sides of the previous equations in terms of the hydrodynamic quantities

It is important to notice that, differently from the uncoupled model, equations for densities and currents are not equivalent to the original equations, due to the presence of .

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Recalling that and are given by the hydrodynamic quantities

and , we have the HYDRODYNAMIC SYSTEM

, , ,c v c vn n J Jvu, ,cv vn u

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The DRIFT-DIFFUSION scaling

• We rewrite the current equations, introducing a relaxation time term in order to simulate all the mechanisms which force the system towards the statistical mechanical equilibrium characterized by the relaxation time

• In analogy with the classical diffusive limit for a one-band system, we introduce the scaling

, , , .c c v v

tt J J J J

• We express the osmotic and current velocities, in terms of the other hydrodynamic quantities.

Vai alla 31

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ZER0-TEMPERATURE QUANTUM DRIFT-DIFFUSION MODEL for the Kane system.

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NON ZERO TEMPERATURE hydrodynamic model

We consider an electron ensemble which is represented by a mixed quantum mechanical state, with a view to obtaining a nonzero temperature model for a Kane system. We rewrite the Kane system for the k-th state

We use the Madelung-type transform exp / , ,k k ki i in iS i c v

We define the densities and the currents corresponding to the two mixed states

We define , , , , , .k k k k k kc v cv c vJ J n u u

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HYDRODINAMIC SYSTEM for the KANE MODEL

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QUANTUM DRIFT-DIFFUSION for the KANE MODEL

withwith

Vai alla 33Vai alla 32

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HYDRODINAMIC SYSTEM for the MEF MODEL

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QUANTUM DRIFT-DIFFUSION for the MEF MODEL

withwith

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Physical meaning of the envelope functions

A more direct physical meaning can be ascribed to the hydrodynamical variables derived from the second approach.

The envelope functions and are the projections of on the Wannier basis, and therefore the corresponding multi-band densities represent the (cell-averaged) probability amplitude of finding an electron on the conduction or valence bands, respectively..The Wannier basis element arises from applying the Fourier transform to the Bloch functions related to the same band index .

Mc M

v

The Kane envelope functions and the MEF envelope functions The Kane envelope functions and the MEF envelope functions are linked by the relationare linked by the relation

This This simple picture does not apply to the Kane model.

2

0

, , , .( )

K M Mj j h

j h

Pi j h c vm E E

n

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This fact confirms that even in absence of external potential , when no interbandThis fact confirms that even in absence of external potential , when no interbandtransition can occur, the Kane model shows a coupling of all the envelope transition can occur, the Kane model shows a coupling of all the envelope functions.functions.

We considerWe consider a a heterostructure heterostructure which consists of two which consists of two homogeneous regions separated homogeneous regions separated by a by a potential barrierpotential barrier and which and which realizes a single realizes a single quantum wellquantum well in in valence band.valence band.

NUMERICAL SIMULATION

See: Alì, F.,Morandi, SCEE2005 Proceedings

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Dipartimento di Matematica Applicata Università di Firenze

Two-band models for electron transport in semiconductor devices

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The incident (from the left) conduction electron beam is The incident (from the left) conduction electron beam is mainly mainly reflectedreflected by the barrier and the valence states are by the barrier and the valence states are almost unexcitedalmost unexcited..

KaneKane MEFMEF

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Dipartimento di Matematica Applicata Università di Firenze

Two-band models for electron transport in semiconductor devices

Kinetic Equations: direct and inverse problems Kinetic Equations: direct and inverse problems Mantova, May 15-17, 2005Mantova, May 15-17, 2005

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The incident (from the left) conduction electron beam is The incident (from the left) conduction electron beam is partially partially reflectedreflected by the barrier and by the barrier and partially captured partially captured by the wellby the well

KaneKane MEFMEF

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Dipartimento di Matematica Applicata Università di Firenze

Two-band models for electron transport in semiconductor devices

Kinetic Equations: direct and inverse problems Kinetic Equations: direct and inverse problems Mantova, May 15-17, 2005Mantova, May 15-17, 2005

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KaneKane MEFMEF

When the electron energy approaches the resonant level, the electron When the electron energy approaches the resonant level, the electron can can travel travel from the left to the right, using the bounded valence resonant state as a from the left to the right, using the bounded valence resonant state as a bridge state.bridge state.

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Two-band models for electron transport in semiconductor devices

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QUANTUM KINETICS LEVELQUANTUM KINETICS LEVEL

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Wigner function:

MEF-Wigner Model

*1, / 2 / 2 '

2iv

ij i jf x v x m x m e dv d

*0

*0

2*

0

2 Im

2 Im

4

MM M Mcc cc c cv

g

MM M Mvv vv v cv

g

MM M M M Mcvcv cv cv cv c v

g

f p Pf i f f

t m m E

f p Pf i f f

t m m E

f i Pi f p f i f i f f

t m m E

'

'

/ 2 / 21'

2i v vi j

ij ij

v

V x m V x mf e dv d

Wigner pictureWigner picture

Vai alla 42

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Numerical results: Kane-Wigner

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Numerical results: MEF-Wigner

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Dipartimento di Matematica Applicata Università di Firenze

Two-band models for electron transport in semiconductor devices

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Numerical results: MEF-WIGNER model

Valence bandConduction band

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Thanks for your attention !!!!!

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Wigner pictureWigner picture

0

0

0

Im 2 Re

Im 2 Re

2

KaneKane Kane Kane Kanecccc cc cc cv cv

KaneKane Kane Kane Kanevvvv vv vv cv cv

KaneKane Kane Kane Kane Kane Kanecvcv cv cv cc vv cc vv

f Pv f i f f Pv f

t m

f Pv f i f f Pv f

t m

f Pv f i f i f f Pv f f

t m

*1, / 2 / 2 '

2iv

ij i jf x v x m x m e dv d

Wigner function:

Kane-Wigner Model

'

'

/ 2 / 21' '

2i v vi j iv

ij ij

v

V x m V x mf e dv d e dv d

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Dipartimento di Matematica Applicata Università di Firenze

Two-band models for electron transport in semiconductor devices

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REMARKS

We have derived a set of quantum hydrodynamic equations from the two- band Kane model, and from the MEF model. These systems, which can be considered as a nonzero-temperature quantum fluid models, are not closed.

In addition to other quantities, we have the tensors and ,

similar to the temperature tensor of kinetic theory.

• Closure of the quantum hydrodynamic system

• Numerical treatment

• Heterogeneous materials

, ,c v cv vc

Numerical validation for the quantum drift-diffusion equations (Kane and MEF models) are work in progress.