Diffusion in solid

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    Diffusion

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    Important Concepts

    Applications of Diffusion

    Activation Energy for Diffusion

    Mechanisms for Diffusion

    Rate of Diffusion (Ficks First Law)

    Factors Affecting Diffusion

    Composition Profile (Ficks Second Law)

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    Diffusion

    How does diffusion occur? Why is diffusion an important part

    ofprocessing?

    How can the rate of diffusion be

    predicted for some simple cases?

    How does diffusion depend onstructure and temperature?

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    Interdiffusion (impurity diffusion): In an alloy,

    atoms tend to migrate from regions of highconcentration to regions of low concentration.

    Initially

    Interdiffusion

    After some time

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    Self-diffusion: In an elemental solid,

    atoms also migrate.

    specific atom movement

    Self-Diffusion

    A

    B

    C

    D

    After some time

    AB

    C

    D

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    Diffusion Mechanisms

    Atoms in solid materials are in constant motion, rapidly

    changing positions. For an atom to move, 2 conditions must be met:

    1. There must be an empty adjacent site, and

    2. The atom must have sufficient (vibrational) energy to

    break bonds with its neighboring atoms and thencause lattice distortion during the displacement.

    At a specific temperature, only a small fraction of the

    atoms is capable of motion by diffusion. This fraction

    increases with rising temperature. There are 2 dominant models for metallic diffusion:

    1. Vacancy Diffusion

    2. Interstitial Diffusion

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    Vacancy Diffusion

    Vacancy Diffusion: atoms exchange with vacancies applies to substitutional impurity atoms rate depends on:

    -- number of vacancies

    -- activation energy to exchange.

    increasing elapsed time

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    Interstitial Diffusion

    Interstitial diffusion smaller atoms (H,C, O, N) can diffuse between atoms.

    More rapid than vacancy diffusion due to more

    mobile small atoms and more empty interstitial sites.

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    Diffusion

    How do we quantify the rate of diffusion?

    sm

    kgor

    scm

    mol

    timeareasurface

    diffusingmass)(ormolesFlux

    22J

    J slope

    dt

    dM

    AAt

    MJ

    1

    M=mass

    diffused

    time

    Measured empirically

    Make thin film (membrane) of known surface area Impose concentration gradient

    Measure how fast atoms or molecules diffuse through themembrane

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    Rate of diffusion is independent of time; the diffusion flux does

    not change with time.

    The concentration profile shows the concentration (C) vs the position within

    the solid (x); the slope at a particular point is the concentration gradient.

    Steady-state diffusion across a thin plate

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    Steady-State Diffusion

    dx

    dCDJ

    Ficks first law of diffusionC1

    C2

    x

    C1

    C2

    x1 x2

    D diffusion coefficient

    Flux proportional to concentration gradient =dxdC

    12

    12linearifxx

    CC

    x

    C

    dx

    dC

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    Diffusion and Temperature

    Diffusion coefficient increases with increasing T.

    DDoexp

    Qd

    RT

    = pre-exponential [m2/s]

    = diffusion coefficient [m2/s]

    = activation energy [J/mol or eV/atom]

    = gas constant [8.314 J/mol-K]

    = absolute temperature [K]

    D

    Do

    Qd

    R

    T

    Activation energy - energy required to produce the movement

    of 1 mole of atoms by diffusion.

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    The diffusing species, host material and temperatureinfluence the diffusion coefficient.

    For example, there is a significant difference in magnitudebetween self-diffusion and carbon interdiffusion in ironat 500 C.

    Factors that influence diffusion

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    Example 2:At 300C the diffusion coefficient and

    activation energy for Cu in Si are:

    D(300C) = 7.8 x 10-11

    m2

    /sQd= 41,500 J/mol

    What is the diffusion coefficient at 350C?

    350

    0350

    300

    03001lnlnand1lnlnTR

    QDDTR

    QDD dd

    300350300

    350

    300350

    11lnlnln

    TTR

    Q

    D

    DDD d

    transformdata

    D

    Temp = T

    ln D

    1/T

    DDoexp Q

    d

    RT

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    Example 2 (cont.)

    K573

    1

    K623

    1

    K-J/mol314.8

    J/mol500,41exp/s)m10x8.7( 2112D

    12

    12

    11exp

    TTR

    QDD d

    T1 = 273 + 300 = 573K

    T2 = 273 + 350 = 623K

    D2 = 15.7 x 10-11 m2/s

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    Nonsteady State Diffusion

    The concentration of diffusing species is afunction of both time and positionC= C(x,t).More likely scenario than steady state.

    In this case, Ficks Second Law is used.

    2

    2

    x

    CD

    t

    C

    Ficks Second Law

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    10 hours at 600C gives C(x). How many hours would it take to get the same C(x) if processed at 500C?

    Answer:

    Processing Ex 6.3

    Dtx

    CCCtxCos

    o

    2erf1),(

    Copper diffuses into a bar of aluminum.

    pre-existing concentration Co of copper atoms

    Surface concentration

    C of Cu atoms bars

    115.5 hrs

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    Non-steady State Diffusion

    Example 3: An FCC iron-carbon alloy initially

    containing 0.20 wt% C is carburized at an

    elevated temperature and in an atmosphere that

    gives a surface carbon concentration constant at

    1.0 wt%. If after 49.5 h the concentration ofcarbon is 0.35 wt% at a position 4.0 mm below

    the surface, determine the temperature at which

    the treatment was carried out.

    Solution: use Eqn. 6.5

    Dt

    x

    CC

    CtxC

    os

    o

    2erf1

    ),(

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    Example 3 Solution (1):

    t = 49.5 h x = 4 x 10-3 m

    Cx= 0.35 wt% Cs = 1.0 wt%

    Co = 0.20 wt%

    Dt

    x

    CC

    C)t,x(C

    os

    o

    2erf1

    )(erf12

    erf120.00.1

    20.035.0),(z

    Dt

    x

    CC

    CtxC

    os

    o

    erf(z) = 0.8125

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    Example 3 Solution (2):

    We must now determine from Table 6.1 the value ofzfor which the

    error function is 0.8125. An interpolation is necessary as follows

    z erf(z)

    0.90 0.7970

    z 0.8125

    0.95 0.8209

    7970.08209.0

    7970.08125.0

    90.095.0

    90.0

    z

    z 0.93

    Now solve forD

    Dt

    xz

    2

    tz

    xD

    2

    2

    4

    /sm10x6.2s3600

    h1

    h)5.49()93.0()4(

    m)10x4(

    4

    2112

    23

    2

    2

    tz

    xD

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    To solve for the temperature at

    which D has the calculatedvalue, we use a rearranged

    form of Equation (6.9a);)lnln(

    o

    d

    DDR

    QT

    from Table 6.2, for diffusion of C in FCC Fe

    Do = 2.3 x 10-5 m2/s Qd= 148,000 J/mol

    /s)m10x3.2ln/sm10x6.2K)(ln-J/mol314.8(

    J/mol000,148

    25211 T

    Example 4 Solution (3):

    T= 1300 K = 1027C

    DDoexp

    Qd

    RT

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    Applications of Diffusion

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    Furnace for heat treating steel using carburization.

    Carburizing is the addition of carbon to the surface of low-carbon steels at temperatures ranging from 1560F to

    1740F.

    Hardening is achieved when a high carbon martensitic casewith good wear and fatigue resistance is superimposed on atough, low-carbon steel core.

    http://www.americanmetaltreatinginc.com/carburizing.htm

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    Case hardening orsurface

    hardening is the process of

    hardening the surface of a metal,

    often a low carbon steel, by diffusing

    elements into the material's surface,

    forming a thin layer of a harder alloy. Carbon atoms diffuse into the iron

    lattice atoms at the surface.

    This is an example ofinterstitial

    diffusion. The C atoms make iron (steel)

    harder.

    Case Hardening

    Carbide band saw blade can cut

    through case hardened materials.

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    Thermal barrier coatings (TBC) with a ceramic topcoat are widely used for

    protecting highly loaded gas turbine components against overheating.

    For example, on internally cooled turbine blades the ceramic topcoat maintains a

    high temperature difference between the outer surface and the underlying metallic

    substrate.

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    Doping by Diffusion

    Integrated circuits (ICs), found in

    numerous electronic deviceshave been fabricated using

    doping techniques.

    The base material for these ICs

    is silicon that has been dopedwith other materials.

    More precisely, controlled

    concentrations ofimpurities have

    been diffused into specific

    regions of the device to change

    the properties (improve electrical

    conductivity).

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    Doping silicon with phosphorus forn-type semiconductors:

    Process:

    3. Result: Doped

    semiconductorregions.

    silicon

    Processing Using Diffusion

    magnified image of a computer chip

    0.5mm

    light regions: Si atoms

    light regions: Al atoms

    2. Heat.

    1. Deposit P rich

    layers on surface.

    silicon