Die Attach Materials

Die Attach G, TECH. 2U.

TECHNICAL R&D DIV.

Topics

2

3

What it is

Resin Ag

Au

Plating

Si Chip

X 10,000 X 50,000 X 5,000

Substrate

4

Current Products H9890-6A H9890-6S H9890-6

Characteristics

Viscosity 30 Pa.s @ 25°C 30 Pa.s @ 25°C 30 Pa.s @ 25°C

T.I. 7.0 7.0 7.0

Density 4.2 g/cm3 4.1 g/cm3 4.0 g/cm3

Non-Volatile Content 91% 90% 90%

Silver Contents 87% 85% 82%

Shrinkage Ratio at Cure 25% 25% 30%

Volume Resistivity 8 x 10-6 Ohm.cm 11 x 10-6 Ohm.cm 20 x 10-6 Ohm.cm

Die Shear RT 50 N/mm2 45 N/mm2 25 N/mm2

Strength 260° C 25 N/mm2 20 N/mm2 5 N/mm2

Storage RT 17 GPa 11 GPa 6 GPa

Modulus 200° C 8.2 GPa 5.0 GPa 3.5 GPa

C.T.E. 23 ppm 30 ppm 45 ppm

Water Absorption 0.1% 0.1% 0.1%

Thermal Conductivity (Bulk) 140 W/mK 100 W/mK 60 W/mK

Pot Life 2 days 2 days 2 days

High Thermal Conductivity High Modulus Long Open Time High Hot Die Shear Strength

High Thermal Conductivity Middle Modulus Long Open Time High Hot Die Shear Strength

High Thermal Conductivity

Low Modulus Long Open Time

5

XH9890-6

2320 20

11

1513

5 4 4

0.1 0.1 0.20

5

10

15

20

25

30

Ag plated Ni/Pd/Au

plated

Bare Cu Ni plated Sn plated Bare Al

Substrate

Die

sh

ear

stre

ng

th(M

Pa)

RT 260degC

XH9890-6S

4239

24

52 1

18 19

11

0.3 0.4 0.40

10

20

30

40

50

60

Ag plated Ni/Pd/Au

plated

Bare Cu Ni plated Sn plated Bare Al

Substrate

Die

sh

ear

stre

ng

th(M

Pa)

RT 260degC

XH9890-6A

4643

26

2 0.5 0.9

24 23

16

0.4 0.1 0.50

10

20

30

40

50

60

Ag plated Ni/Pd/Au

plated

Bare Cu Ni plated Sn plated Bare Al

Substrate

Die

sh

ear

stre

ng

th(M

Pa)

RT 260degC

H9890-6

H9890-6S H9890-6A

- Die shear strength was high on Ag plated and Au plated. (It is considered

to be due to metallic bond.)

- On the other hand, die shear strength was low on Ni plated, Sn plated and bare Al substrate.

Selectivity Of Plating

6

Thermal Cycling

− Test Vehicle / Curing

− Si Chip: 2 mm x 2 mm x 100 micron Si chips (backside: Au)

− Substrate: Ag plated Cu LF

− Curing condition: 60 min. ramp to 2000C + 60 min. at 2000C

− Thermal Cycling: - 550C to 1500C for 1,000 hours at 2 cycles per hour

− Die shear strength (DSS) at room temperature

− Thermal resistance using T3Ster

7

8

Conventional High Thermal H9683

Characteristics

- For QFN and QFP

- High Thermal Conductivity at 3 Layer

- High Resistivity

- High Adhesion Strength

- Good Dispensability

Curing 150oC x 120min

Viscosity [Pa･s] (@ 2.5 rpm) 25

T.I (0.5 rpm / 5 rpm) 6.0

Volume Resistivity [x10 -̂4 W -cm] 0.5

Adhesive Strength [N/mm2] RT 18

200oC 2.5

Thermal Conductivity [W/mK] 1 layer 11

3 layer 6.5

Tg [oC] *1 61

Storage Modulus*1 25oC 7.8

200oC 0.07

*1: A film was prepared by curing paste between two glass pieces.

9

H9683 SAT

Initial state

After

JEDEC Lv.3

Frame: PPF (Ni/Pd/Au); Thickness: 200 µm; Die Pad Size: 11.5 x 8 mm; Die Size: 3 mm Square;

Die Thickness: 330 µm; Passivation: Polyimide

SAT Results After JEDEC Lv.3 (30oC / 70% / 264hrs + 3X Reflow at 260oC

SAT After JEDEC Level 3

10

11

Resin Powder Technology

SubstrateSubstrate

Before Processing

(wet)

Die

After Processing

(cured)

Ag Filler

Die

Polymer Powder

Liquid Carrier

12

Resin Powder

13

Current Products

*: Interim tested values

PRODUCT Sk30 Sk70N/AP2 H9940 XH9952-3 (DEVELOPMENT)

Sk100N (DEVELOPMENT)

Type

Thermoplastic Thermoplastic / Thermoset Combination Thermoset

- Lowest Elastic

Modulus

- For Large Dies

- Low Elastic

Modulus

- For Middle

Sized Dies

- High Adhesion

Strength

- For

Semiconductor

Devices

- BLT < 1 mil

possible

- For Middle

Sized Dies

- High Thermal

Conductivity

Viscosity [Pa･s] @ 5 rpm 15* 14 TBA 15* 15*

T.I [0.5 rpm / 5 rpm] 3.0* 3,2 TBA 4.0* 5.0*

Silver Contents [%] TBA 93,0 76,0 TBA TBA

Die Shear Strength (Si/Ag) [N/mm2]

@RT 45* 21 13 27* 18*

Tg [oC] 73* 89 40 TBA TBA

Thermal Conductivity [W/mK] 20* 35 12 27* 70*

Elastic Modulus [GPa] @RT < 1.0* 5,5 4,5 5.6* TBA

14

12.7mm

Cu/Al

5.0mm

Sk30N

Sk60N Sk70N

Sk100N

E’=4.1GPa E’=2.0GPa

E’=1.2GPa

E’=0.6GPa

Application Stress Chart

Sk100 Sk70N/AP2

Sk60

Sk30

15

16

Current Materials

Product XS8488-1 XS8488-7

Characteristics

High Die Shear Strenght High Die Shear Strenght

Elevated Thermal Conductivity High Thermal Conductivity

AluminaFiller AluminaFiller

Viscosity @

5rpm Pas 8 14

TI 2,2 1,3

Tg °C 53 40

CTE < Tg ppm/°K 30 20

> Tg ppm/°K 130 80

Adhesion

Strength

RT 19 20

200°C 8 5

Storage

Modulus GPa 4,3 8

Thermal

Conductivity W/mK 1,2 2,5

Curing 30 Min ramp-up + Hold for 30 Min. @150°C

17

18

Conductive Materials

Product H9800 XH9870-3 XH9801-1 XH9871-1

Characterisitcs

High Adhesion

Strength

Low Elastic Modulus,

No Bleeding

High Adhesion Strength on Au & Ag

plated Lead-Frame

No Bleeding Passes MSL3 Good Moisture Resistance

Viscosity @ 5

rpm Pas 9,4 10,1 11,2 11,9

TI 6,4 5,3 6,6 5,9

Tg °C 73,0 35,0 70,0 55,0

CTE < Tg ppm/°K 50,0 50,0 45,0 50,0

> Tg ppm/°K 130,0 125,0 130,0 125,0

Elastic

Modulus

RT GPa 7,4 1,1 8,4 6,1

260°C GPa 0,2 0,1 0,2 0,2

Die Shear

Strength

(Si/Cu)

RT N/mm 2 45,0 15,0 58,0 43,0

260°C N/mm 3 5,0 2,0 5,8 8,4

Curing 30 Min Ramp-Up + Hold 30 Min. @150°C

30 Min Ramp-Up + Hold 30 Min.

@175°C

19

Non-Conductive

Product DA8481-8

Characteristics

Low Modulus

High Reliability

No Bleeding

Viscosity Pas 8

TI 4,7

Tg (DMA) °C 57

CTE < Tg ppm/°K 40

> Tg ppm/°K 160

Elastic Modulus RT GPa 4

260°C GPa 0,13

Die Shear Strength RT N/mm² 25

260°C N/mm² 4

Moisture Absorption % 0,5

Curing 30 Min. Ramp-up + Hold for 30 Min. @

150°C

20

Low Cost Conductive

Product XH9816-8F

Characteristics Ag Coated Filler

Low Weight

Viscosity @ 5 rpm Pas 9,7

TI 5,6

Tg °C 60

CTE < Tg ppm/°K 35

> Tg ppm/°K 120

Elastic

Modulus

RT GPa 2,3

260°C GPa 0,1

Die Shear

Strength

(Si/Cu)

RT N/mm² 31

260°C N/mm² 4,5

Curing

Ramp-up for 0

Min. + Hold 60

Min. @ 150°C

21

22

Dicing Tape

Wafer

Dicing Tape

Ag Paste

Wafer Printing

D/A Paste

Wafer

Squeegee

Metal Mask

B-stage (First Curing)

Wafer

Wafer

Dicing Tape

Ag Paste

Dicing Pick up

Chip Mounting Curing (Second Curing)

Heating

Lead-Frame

Wire Bonding

Molding Compound

Wafer-Applied B-Stage Process

23

Wafer Applied / B-Stage

Product XH9811-5

XS8483W-8

(Development) Type Conductive Non-Conductive

Characteristic

Printable Easy Pick-up

Good Bondability Good Bondability

High Die Shear Strength High Die Shear Strength

Viscosity @ 5 rpm Pas 25 50

TI 6,5 1,1

Tg °C 135 125

Storage

Modulus

RT GPa 8 5,5

200°C GPa 0,22 0,12

Adhesion

Strength

RT N/mm² 25 50

200°C N/mm² 3,5 6

Volume Resisitvity Ohm.cm 9 X 10E-3 N/A

Thermal Conductivity W/m°K 2,6 TBA

Curing B-Stage 60 Min. @ 110°C 60 Min. @ 120°C

Final Cure 30 Min. @ 175°C 90 Min. @ 175°C

24

Thickness Measurement After B-Staging

XH9811-5 XS8483W-

8

1. Lamination

Back Grind Tape

SB-165HRB-BH20-R2 (Mitsui Chemicals. Inc)

or

SB-228LBP-CH8-PB2 (Mitsui Chemicals. Inc)

Dicing Tape JE-115AJ

(Nitto Denko）

SPV-224S (Nitto

Denko)

2. Dicing

Cut Method 1 time 1 time

Blade S233JH

50.4D0.035T-40H

S233JH 50.4D0.035

T-40H

Spindle Speed

30000 rpm 30000 rpm

Cut Speed 7 mm/sec 3 mm/sec

3. Mounting

Die Temp. 25 deg. C 25 deg. C

Sub. Temp. 220 deg. C (>100 deg.

C) 160 deg. C

Pressure > 0.1 kg 0.12 kg

Time > 0.1 sec. 0.2 sec

Ave : 36.2 um

45

45

40

40

45

40

40

45

Ave:42.7um

42

43

43

44

Rz：4.5um

Thickness Measuring

25

Current Development – Ink-Jet

Product XS8469IJ-1

Characteristic Easy Printing

B-Stage

Viscosity @ 30 rpm Pas 20

Solid Contents % ~25

Tg °C 90

Sorage

Modulus

RT GPa 2,4

200°C GPa 0,04

Die Shear

Strength

RT N/mm² 15

200°C N/mm² 4

Curing TBA

26

UV cure within 1 min. after Ink-Jet printing

Substrate Temp.: 80°C

Open Time: < 24 hours

1.Ink Jet 2.B-Stage

(UV Applied)

3.Chip Attach 4.Final Curing

Post Cure

Ink-Jet Process

27

Thermal Interface Material

Product XH9813-5

Characteristics

High Thermal Conductivity

Low Modulus

High Reliability

Viscosity @ 5 rpm Pas 50

TI 6,2

Tg °C 11

CTE < Tg ppm/°K 45

> Tg ppm/°K 110

Storage Modulus RT GPa 0,5

200°C GPa 0,1

Adhesion Strenght RT N/mm² 15

200°C N/mm² 4,4

Volume Resisitivity Ohm.cm 3,3 X 10E-4

Thermal Conductivy W/mK 5,3

Curing 30 Min Ramp-up + Hold for 60

Min. @ 150°C

28

29

LED Adhesives Conductive

Product H9863 H9607

Type

Blue White LEDs,

Dispensing and

Transferring

General Type LED,

Dispensing and

Transferring

Characteristics

High Thermal

Conductivity

High Thermal

Conductivity

High Hot Die Shear

Strength

High Hot Die Shear

Strength

Less Susceptible to

Heat and Light Easy Processing

Viscosity @ 2.5 rpm Pas 25,0 25,0

T.I. 6,1 7.0

Tg °C 175,0 70,0

Adhesion Strength

RT N/mm² 11,0 16,0

200o

C N/mm² 3,2

3,2

Thermal Conductivity W/mK 17,0 10,0

Volume Resistivity Ohmcm 0.3 X 10E-4 1,5 X 10E-4

30

Color Stability

Conventional type @150oC

0102030405060708090

100

400 450 500 550 600 650 700

Wave length [nm]

Ref

lect

ance

[%

]

INI

250hr

500hr

1000hr

2000hr

XH9680-63 @150oC

0102030405060708090

100

400 450 500 550 600 650 700

Wave length [nm]

Re

flect

an

ce [%

]

INI

250hr

500hr

1000hr

2000hrH9863 (XH9680-63)

XH9680-63 BUV

0102030405060708090

100

400 450 500 550 600 650 700

Wave length [nm]

Ref

lect

ance

[%]

INI

250hr

500hr

1000hr

2000hr

Conventional type BUV

0102030405060708090

100

400 450 500 550 600 650 700

Wave length [nm]

Ref

lect

ance

[%]

INI

250hr

500hr

1000hr

2000hr

H9863

@ 150°C

@ 450 nm

31

LED Non-Conductive

Product DA8465-12 DA8472-1

Type Epoxy - Silicone Hybrid Resin

Transferring and Dispensing

Color Transparent White

Characteristics

High Die Shear and Hot Die Shear

Strength

High Die Shear and Hot Die Shear

Strength

No Bleeding High Thermal Conductivity

Viscosity @5rpm Pas 7,0 15,0

Gel Time Sec. 60,0 47,0

Tg °C 65,0 90,0

Storage Modulus GPa 2,0 7,5

Adhesion Strength

RT N/mm² 23,0 22,0

200o

C N/mm² 2,5 7.0

Storage Modulus GPa 2.0 7,5

Thermal Conductivity W/mK 0.2 2,4

Curing 60 Min. @ 160oC

32

Transmittance Change

Conventional type BUV

XS8465-3 UV

50

60

70

80

90

100

110

300 400 500 600 700 800 900

Wave length [nm]

Tra

ncem

itta

nce [%

]

INI

100hr

250hr

500hr

1000hr

2000hr

XS8465-3 150oC

50

60

70

80

90

100

110

300 400 500 600 700 800 900

Wave length [nm]

Tra

nce

mitta

nce

[%

]

INI

100hr

250hr

500hr

1000hr

2000hr

XS8465-7 150oC

50

60

70

80

90

100

110

300 400 500 600 700 800 900

Wave length [nm]

Tra

nsm

itta

nce [%

] INI

100hr

250hr

500hr

1000hr

2000hr

XS8465-7 BUV

50

60

70

80

90

100

110

300 400 500 600 700 800 900

Wave length [nm]

Tra

nsm

itta

nce

[%

] INI

100hr

250hr

500hr

1000hr

2000hr

DA8465-12

DA8465-12

Conventional Type @ 150oC

33

XS8472-1 BUV

0102030405060708090

100

400 450 500 550 600 650 700

Wave length [nm]R

eflecta

nce [

%]

INI

250hr

500hr

1000hr

2000hr

XS8472-1 @150oC

0102030405060708090

100

400 450 500 550 600 650 700

Wave length [nm]

Reflecta

nce [%

]

INI

250hr

500hr

1000hr

DA8472-1 DA8472-1

Reflectance Change

34

Sintering Die Attach For LED

35

Product XH9889-1 XH9889-2 Type Dispense Stamping

Characteristics

High Thermal Conductivity

High Modulus

High Reflectance

High Die Shear and Hot Die Shear Strength

Viscosity Pas 25 60

T.I. 7,8 8,0

Silver Contents % 86 91

Volume

Resistivity Ohmcm 4,00E-06 2,50E-06

CTE ppm/°K 20 20

Storage

Modulus

RT GPa 22 23

200° C GPa 11 12

Die Shear

Strength

RT RT 45 35

260° C 260° C 30 20

Thermal

Conductivity W/mK 280 W/mK 300

Curing 60 Min. Ramp + 60 Min. Hold @ 200°C

36