Development of GaN SSPA for Satellite-Borne Application · High RF Power C-Band Uplink Downlink ......

of 25 COMPANY PROPRIETARY

NOT TO BE REPRODUCED OR DISCLOSED WITHOUT SPECIFIC

WRITTEN PERMISSION OF MITSUBISHI ELECTRIC TOKKI SYSTEMS CORPORATION

TKE-2010-0906 A

MELOS��Mitsubishi Electric TOKKI Systems Corporation

MELOS��Mitsubishi Electric TOKKI Systems Corporation

Microelectronics Work Shop 23Microelectronics Work Shop 23

November 10, 2010November 10, 2010

Development of GaN SSPA for Satellite-Borne Application

Development of GaN SSPA for Satellite-Borne Application




TKE-2010-0906 A

1. The high power amplifier for satellite use

2. GaN device characteristics

3. GaN Device: Achieved Performance

4. GaN SSPA: Achieved Performance

5. Conclusion and Next Target

Table of Contents




TKE-2010-0906 A1. High Power Amplifier1. High Power Amplifier

The present situation of the high power amplifier for satellite use

Command Signals

Figure 1-1

Space Segment (Satellite)

Uplink

Telemetry Signals

Downlink �� Needs

Service Station Interface Station TTC Station

Ground Segment Control Segment

High RF Power

C-Band Uplink Downlink6GHz 4GHz

14GHz 12GHzKu-Band




TKE-2010-0906 A

Figure 1-2 Typical Communication Subsystem in the Communication Satellite

Uplink Downlink

HPA

PFTC

Ch.

HYB

1:3

Ch.

Ch.

Ch.

Ch.

LNA

LNA

LNA

LNA

LNA

PFTC

PFTC

TWT

TWT

TWT

TWT

TWT

TWT

TWT

TWT

CA

BCN

BCN

C

BCN

BCN

C

TC

Tx FIL

TCTx FIL

TC

Tx FIL

FEED

FEED

FEED

HYB

1:4

HYB

1:4

HYB

1:2

CA

D/C

CA

CA

CA

CA

CA

CA

D/C

D/C

D/C

D/C

D/C

D/C

D/C

O-MUX

O-MUX

O-MUX

1. High Power Amplifier1. High Power Amplifier

HPAs are applied to each communication channels

�� Applied many HPAs�Required

Light WeightSmall Footprint




TKE-2010-0906 A

Main Performance :Frequency: L/S/C BandOutput Power:70 to 150 wattsEfficiency: 60%Mass: L/S-band : 3400g

C-band : 2200gFoot print: 380 cm2

EPC

TWT

Channel Amplifier Main Performance :Frequency: L/S/C BandOutput Power: L/S-band : 150 watts

C-band : 70 wattsEfficiency: L/S-band : 55%

C-Band : 50%Mass: L/S-band : 1200g

C-band: : 1200gFoot print: 200 cm2

EPC

LP portionHP portion

The following two kinds of hardware take a part of high power amplification.- TWTA: Traveling Wave Tube Amplifier- SSPA: Solid State Power Amplifier

Equipment of High Power AmplificationEquipment of High Power Amplification1. High Power Amplifier1. High Power Amplifier

Figure 1-3a Figure 1-3b




TKE-2010-0906 APerformance ComparisonPerformance Comparison

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TWTATWTA::Higher OHigher Output Power, Efficiencyutput Power, Efficiency

CConventional GaAs SSPAonventional GaAs SSPA::Light WeightLight Weight

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T [ Z\ ] ]^ ZT [ Z\ ] ]^ ZT [ Z\ ] ]^ ZT [ Z\ ] ]^ Z SS SS = A= A= A= A__ __ < A< A< A< A YY YY WW WW

XY X Z SQ [ ` [ abc O M d [ a O M WXY X Z SQ [ ` [ abc O M d [ a O M WXY X Z SQ [ ` [ abc O M d [ a O M WXY X Z SQ [ ` [ abc O M d [ a O M W

T [ Z\ ] ]^ ZT [ Z\ ] ]^ ZT [ Z\ ] ]^ ZT [ Z\ ] ]^ Z

Figure 1-4a RF Output Power

Figure 1-4b Efficiency

Figure 1-4c Mass




TKE-2010-0906 A

Limit of the conventional GaAs SSPALimit of the conventional GaAs SSPA

More Powerful device is desiredMore Powerful device is desired

Limit of handling power (25W max)Limit of handling power (25W max)

Multiple power combining to achieve higher Multiple power combining to achieve higher output poweroutput power

Wider footprint / Heavier massWider footprint / Heavier mass

1. High Power Amplifier1. High Power Amplifier




TKE-2010-0906 A

25 0.6 1.6 68 108 37%40GaAsC

Band58 1.0 1.2 70 140 50%70GaN

233%170%135%175%

ef g hief g hief g hief g hij f kj f kj f kj f k

/

j f lmj f lmj f lmj f lm

531%191%141%375%

ef g hief g hief g hief g hij f kj f kj f kj f k

/

j f lmj f lmj f lmj f lm

125 1.2 1.2 123 273 55%150GaN

24 0.6 1.7 63 103 39%40GaAsL/S

Band

Figure of Merit #2

Pout/Mass (W/kg)

Figure of Merit #1

Pout/Pdissipation

(W/W)

Typical Mass (kg)

SSPA Heat Dissipation

(W)

SSPA Power

Consumption (W)

SSPA Efficiency

(%)

SSPA RF Pout

(W)

DeviceType

Frequency

2.1 What will be new and be improved with GaN?2.1 What will be new and be improved with GaN?

2. Application of GaN to SSPA 2. Application of GaN to SSPA

Table 2-1 GaAs HEMT and GaN HEMT




TKE-2010-0906 A

If GaN is applied to the SSPAIf GaN is applied to the SSPA……

2.2 Expected GaN SSPA Performance2.2 Expected GaN SSPA Performance

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T [ Z\ ] ]^ ZT [ Z\ ] ]^ ZT [ Z\ ] ]^ ZT [ Z\ ] ]^ Z

GaN SSPA

GaN SSPA

GaN SSPA

L/S-Band: 150 W 55% 1.2 kgC-Band: 70 W 50% 1.4 kg

EfficiencyOutputPower Mass

55��Figure 2-1a RF Output Power

Figure 2-1b Efficiency

Figure 2-1c Mass




TKE-2010-0906 A

��Development of GaN device for space application�� SQT:Space Qualification Test

��Applying GaN performance to SSPA design- Thermal performance- Prevent arcing in vacuum environment

��Radiation effect confirmation

2.3 2.3 Issues to be solvedIssues to be solved




TKE-2010-0906 A

GaN for space application was developed by Mitsubishi Electric.

PAE(%) & I��(A)

3.1 Device Electrical Performance3.1 Device Electrical Performance3. GaN Device: Achieved Performance3. GaN Device: Achieved Performance

Input to Output Powerand Gain completion.

Figure 3-1a Figure 3-1b

30

35

40

45

50

55

20 25 30 35 40 45

Pin (dBm)

Pout

(dB

m)

5

10

15

20

25

30

Gp (

dB)

f=3.90GHz

f=4.00GHz

f=4.10GHz<--Pout

Gp -->

0

20

40

60

80

20 25 30 35 40 45

Pin (dBm)P

.A.E

. (%

)

0.0

2.0

4.0

6.0

8.0

Ids(

RF)

(A

)

f=3.90GHz

f=4.00GHz

f=4.10GHz

<-- PAE

Ids(RF) -->

At device level, RF output power of over 50 dBm (at P2dB) is achieved. Power added efficiency (PAE) exceeds 60 %.




TKE-2010-0906 A

(1) SQT Summary for GaN device

Figure 3-2 MTTF Evaluation

3.2 Device Qualification Status3.2 Device Qualification Status

Group Test Item Results

Temperature Cycling 1051 -65/+175 deg.C, 210cycles

Shock 2016 1500G, 3 axis

Vibration 2051 100-2000 Hz

Constant Acceleration 2006 10000 G

Seal Test 1071 Gross and Fine leak

Internal Visual 2075SEM 2077Bond Strength 2037Die Shear Strength 2017RF Life Test 1026 1000 hr r/n=0/2DC Life Test 1026 1000 hr r/n=0/8Li

feTe

stM

echa

nica

l Tes

t

Test Condition MIL-STD-750Method

r/n=0/11

r/n=0/3

Table 3-1 SQT Result of GaN HEMT

2 test results with Vds=47V are obtained.� Expected MTTF = 1.0x106 h at Tch=175 degC

Test Result with 270 degC, Vds 45V is obtained�MTTF with Vds=45 degC :1.3x106 hr at Tch=175 degC




TKE-2010-0906 A

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100WClass GaN HPA

Test Fixture for Arcing Test

High Vacuum

Figure 3-4 Output Power MonitorFigure 3-3 Test Set-up for Arcing Test

no p3.2 (2) Arcing Test Results

qr sSG PM

tu v

qr s

Vacuum Chamber

Signal Generator

Power Monitor

Vacuum gauge

Arcing test was performed with GaN device (100W class) . There was no arcing at all from ambient pressure to high vacuum environment.

RF output power monitor remains stable during depressurization




TKE-2010-0906 A

(1) Single Event Tests:Radiation hardness test for single event effect (SEB, SEGR)Test condition;- Ion Beam : Br+13 (145MeV) (Br: Bromine)- LET (Liner Energy Transfer): 31.2MeV/(mg/cm2)- Beam fluence : 1x106 ions/cm2

3.3 Device Radiation Hardness Tests3.3 Device Radiation Hardness Tests

Figure 3-5 Radiation Test Equipment

Figure 3-6 GaN Test Fixture




TKE-2010-0906 A

The device operating condition: Vds=50V,Pout=P13dBTable3-2 RF drive condition & irradiation result

3.3 (1) Single Event

no degradation

Figure 3-7a Figure 3-7b Figure 3-7c




TKE-2010-0906 A

Cobalt-60 gamma ray was irradiated on GaN device.126kGy with RF input, bias Vds=45V,Ids=0.22A �� No Degradation86kGy with no RF, pinch-off bias Vds=45V,Vgs=-5V �� No Degradation

Table3-3 Bias condition & irradiation result

The Result of Irradiation test after Vd=45V, Id=0.22A operation

3.3 (2) Total Ionizing Dose

Figure 3-8a Figure 3-8b Figure 3-8c




TKE-2010-0906 A

Performance Summary- Frequency band : 3.95 GHz +/- 150MHz- Output Power: >70 watts - Spurious Output: <-50dBc/Inband- Power consumption: 190 watts (Pout 84W)- Efficiency : 45%- Mass : 1370g- Size : 265 x 95 x 125

Driver Amp.

High-power Amp.

EPC

4. GaN SSPA4. GaN SSPA: Achieved Performance: Achieved Performance

C-Band SSPA is developed by utilizing GaN device- Single ended configuration forRF portion to minimize size

- The EPC (electrical power conditioner) isnewly developed to drive GaN drainvoltage (35V to 50V)

Figure 4-1 GaN C-SSPA




TKE-2010-0906 A

Frequency vs. Output Power characteristics Frequency vs. Output Power characteristics

The output power achieved 70W

Figure 4-3 Liner Gain

Figure 4-2 Output Power versus Frequency Characteristics

60

70

80

90

100

110

3 3.5 4 4.5 5Frequency [GHz]

Gai

n [d

B]

Linear Gain achieved 100dB


30

35

40

45

50

55

3.7 3.8 3.9 4 4.1 4.2

Frequency [GHz]

Out

put P

ower

[dB

m]

Target line:70W




TKE-2010-0906 A

Figure 4-4 Output Power & Efficiency at CW

CW characteristicsCW characteristics


30.00

35.00

40.00

45.00

50.00

-25.00 -20.00 -15.00 -10.00 -5.00 0.00 5.00

Relative Input Power [dB]

Out

put P

ower

[dB

m]

0.00

20.00

40.00

60.00

80.00

Pow

er A

dded

Effi

cien

cy [%

]

-10deg.C+25deg.C+60deg.C

Pout>85WPAE>45% at P2dB

Normalized with 2dB output power compression point (P2dB)

45.93dBm=85W Output Power

Power Added Efficiency

45

w

min.




TKE-2010-0906 A

Out put Power at Multi carriers

Figure 4-6 NPR:Noise Power Ratio

30

35

40

45

50

55

-15 -10 -5 0 5

Relative Input Power [dB]

Out

put P

ower

[dB

m]

MultiMulti--carrier characteristicscarrier characteristics

Multi carrier BW=80MHzTone value:80001


xy

z xz y

{ x{ y

| x| y

} x~ z x ~ y x y

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Noise BW=80MHz

Tone value:80001

Figure 4-5 Input to Output Power with Multi-Carrier




TKE-2010-0906 A

Thermal Analysis ResultThermal Analysis Result


Enough margin to the rated channel temperature of 175 deg.C

Thermal analysis is performed with the following thermal resistance:

- GaN package- Thermal filer (GaN/Chassis)- Chassis- Thermal filer (SSPA/panel)

Result: Tj=142.8 deg.C

Figure 4-7 Junction Temperature




TKE-2010-0906 A4. GaN SSPA4. GaN SSPA: Achieved Performance: Achieved Performance

Qualification TestsQualification Tests

1. Thermal Vacuum Test:- Temperature : -10 deg.C to +60 deg.C- Vacuum condition :1x10-6 Torr- Test Cycle : 33 cycle

2. Vibration Test : Pass3. Mechanical Shock Test : Pass4. Electro Magnetic Compatibility : MIL-STD 462 applied

Level Remarks

Sine 20G all 3axis

14.1 Grms X, Y axis

19.7 Grms Z axis

1000G all 3axis

Item

Shock

RandomVibration

Table 4-1 Vibration & Shock Test condition

Qualification test was performed successfully based on the following test items and test conditions




TKE-2010-0906 A5. Conclusion and Next Target 5. Conclusion and Next Target

GaN SSPA was developed and achieve the following performance.

GaN device- 100 Watts class GaN is developed- Space Qualification Test is successfully completed- No arcing from ambient pressure to high vacuum environment. - Radiation Hardness is confirmed

- No SEB, No SEGR with Vd 50V, P13dB condition- No TID degradation with operation condition (Vd 45V, Id 0.22A)

SSPA Performance- 85 Watts RF output power with 45% efficiency is achieved- Single stage configuration, without power combining�� Slim and light weight is accomplished

- Qualification test is successfully completed

5.1 Achieved Results5.1 Achieved Results




TKE-2010-0906 A

30

35

40

45

50

55

3.7 3.8 3.9 4 4.1 4.2

Frequency [GHz]

Pow

er A

dded

Eff

icie

ncy

[%]

QT result

EPC efficiency:87%

Final Stage GaN efficiency:60%

Total efficiency:45%

For Next Model

EPC efficiency:94%

Final Stage GaN efficiency:65%

Total efficiency up to 50%

The total efficiency at normal temperature is 45��.

��EPC have already realized efficiency 94% in other development.

��The efficiency in finale stage GaN will be achieved 65% by the improvement of device characteristics improvement.

Power added efficiency will be improved

5.2 Target to Be Improved5.2 Target to Be Improved

Figure 5-1 Efficiency Improvement




TKE-2010-0906 A5. Conclusion and Next Target5. Conclusion and Next Target

Next Target

- Actual operation in the orbit

- Development for higher frequency operation…depends on the manufacturer




TKE-2010-0906 A

End of PresentationEnd of Presentation

Development of GaN SSPA for Satellite-Borne Application · High RF Power C-Band Uplink Downlink ......

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