DESIGN GUIDE TDADP-SIL-USBC-65W-RD Description SZ1130 …

DESIGN GUIDE TDADP-SIL-USBC-65W-RD

Description The TDADP-SIL-USBC-65W-RD reference design board describes a 65 W universal input offline power supply with programmable output voltage (5 V/3 A, 9 V/3 A, 15 V/3 A, 20 V/3.25 A). The power supply uses SZ1130 (Flyback PWM controller with integrated active clamp circuit) IC, Transphorm TP65H300G4LSG (650 V SuperGaN® FET) and Weltrend WT6633P USB PD controller. This design shows the high-power density and efficiency that can be achieved due to the high level of integration of the SZ1130 controller.

This document contains the power supply specification, schematic, bill-of-materials, transformer documentation, printed circuit layout, and performance data.

Key Specs Schematics Input 90-265 VacOutput Voltages 5 V, 9 V, 15 V, 20 V Max Output Current 3.25 A Max Output Power 65 W Output Port USB-C PD Efficiency >94% Full Power Efficiency

SZ1130 Features Integrated High Voltage Active Clamp FET,

Active Clamp Driver, and Start-up Regulator Capable of Over 94% Efficiency Flat Efficiency Across Universal (90-265 VAC)

Input Voltage and Load Tight Switching Frequency Regulation for

Improved Input EMI Filter Utilization Up to 140 kHz Switching Frequency Operation OptiModeTM Cycle-by-Cycle Adaptive Digital

Control Multi-Mode Operation (Burst Mode, Quasi-

Resonant, Valley Mode Switching) Advanced Valley Mode Switching for low EMI Self-Tuning Valley Detection OTP, UVLO, OVLO, PCL, OPP and OSC

Protections <50mW No Load Power Consumption of the IC Up to 65 W Output Power

Applications High-Power-Density USB-PD AC/DC Power

Supplies

May 01, 2021 Silanna Semiconductor and Transphorm tdadp-sil-usbc-65w-rd-ov1

https://www.transphormusa.com/en/document/datasheet-tp65h300g4lsg-2/

https://powerdensity.com/wp-content/uploads/2020/08/product-brief-SZ1130.pdf

https://powerdensity.com/wp-content/uploads/2020/08/product-brief-SZ1130.pdf

Tushar Dhayagude

Over 94% efficient, ~ 30W/in3, compact, 65W USB-C Adapter Reference Solution

TDADP-SIL-USBC-65W-RD

Silanna Semiconductor and Transphorm tdadp-sil-usbc-65w-rd-0v1

DESIGN GUIDE

Warning

Disclaimers:

1. Caution – High Voltage Operation: Lethal high voltages are present when this evaluation board ispowered from AC mains. Improper contact with high voltages could lead to electrical shock, burn and/orfire hazards, risking property damage, personal injury, and death.

2. Evaluation Purpose Only: This evaluation board is intended for evaluation purpose only and not forcommercial use. Care must be taken when testing the board, and an isolation transformer should beutilized.

3. Patents: The evaluation board design, along with circuits shown in this test report, may be covered byone or more U.S. and foreign existing/pending patents.



DESIGN GUIDE

Contents EVB Description .................................................. 1 SZ1130 Features ................................................. 1 Applications ......................................................... 1 Warning ............................................................... 2 Power Supply Specifications ............................... 4 SZ-RD19-65W Board Pictures ............................ 5 Schematic ............................................................ 6 Circuit Description ............................................... 7

Input Protection......................................................... 7 EMI Filtering .............................................................. 7 Fault Protections ....................................................... 7

PCB Layout ......................................................... 8 PCB Prints ................................................................ 8

Bill of Materials (BOM) ...................................... 10 Transformer Specification ................................. 13 Common-Mode Choke Specification ................. 14 Performance Data ............................................. 15

Electrical Data ......................................................... 15 Efficiency Graphs .............................................. 18

Key Waveforms ...................................................... 20 Conducted EMI Scans ....................................... 21 Output Voltage Ripple Noise ............................. 23 Thermal Measurements .................................... 26 Revision History ................................................ 28 Hardware Info .................................................... 28

Tables TABLE 1: SZ1130-00 RECOVERY BEHAVIOR .......... 7 TABLE 2: TRANSFORMER MATERIAL LISTS ............ 13 TABLE 3: COMMON-MODE CHOKE MATERIAL LISTS

...................................................................14 TABLE 4: LOAD EFFICIENCY REQUIREMENTS ........ 15 TABLE 5: NO-LOAD POWER CONSUMPTION ........... 19 TABLE 6: OUTPUT VOLTAGE RIPPLE SUMMARY ..... 23

Tushar Dhayagude

TP65H300G4LSG Features



DESIGN GUIDE

Power Supply Specifications The evaluation board performance data presented in this report exceeds the power supply specifications listed in the following table.

Description Symbol Min. Typ. Max. Units Comments

Input Voltage Vin 90 115/230 265 VAC

2 Wire Input Frequency fline 47 60/50 63 Hz

Efficiency 5 V/3 A η5V/3.25A 90 %

@ 115 Vac, 25 °C ambient

9 V/3 A η9V/3.25A 93 %

15 V/3 A η15V/3.25A 93 %

20 V/3.25 A η20V/3.25A 93 % 4-Point Ave Efficiency

5 V ηave_5V 82.37 % CoC version 5 tier 2 4- point (25%, 50%, 75%,

100%) average efficiency @ 115Vac

9 V ηave_9V 87.60 %

15 V ηave_15V 88.99 %

20 V ηave_20V 89.16 % No-Load Input Power Pin 75 mW @ 230 Vac, 25 °C

ambient Programmable Output Voltage VOUT 5 20 V

Environmental Conducted EMI Meets CISPR22B/EN55022

Ambient Temperature TAMB 0 40 °C No airflow, sea level.

NOTE: The circuit board needs to be evaluated for additional tests, such as ESD and Line Surge to use the evaluation board design presented in this test report as a charger/adapter. Furthermore, the layout of the board needs to be adjusted according to the target shape and form factor of the end application.



DESIGN GUIDE

Board Pictures

Figure 1: Top Side of the EVB

Figure 2: Bottom Side of the EVB

Tushar Dhayagude

Tushar Dhayagude

Tushar Dhayagude

Tushar Dhayagude

Transphorm 240mOhmGaN Daughter Card

Tushar Dhayagude

Tushar Dhayagude

Silanna Active ClampFlyback IC SZ1130



DESIGN GUIDE

Schematic

Figure 3: 65W Schematic



DESIGN GUIDE

Circuit Description Input Protection The design incorporates a slow-acting input fuse (F1) as a form of protection in case of destructive failure of any of the downstream components. Furthermore, it has a varistor (RV1) connected between the line and neutral to absorb line surges and minimize the voltage overshoot seen by the downstream converter components. In addition, there is a footprint for an inrush current limiter (RT1) (negative temperature coefficient resistor) for applications which require attenuation of the inrush current.

EMI Filtering To meet the target EN55022 conducted EMI specification with sufficient margin with the least number of components and the highest power processing efficiency, the design utilizes an input filter consisting of an x-capacitor (C1) and a single common- mode choke (L1) as well as transformer (T1) construction for better EMI performance.

Fault Protections The evaluation board features Hiccup Mode Fault Protection using SZ1130-00. Under all applicable fault conditions, the device attempts to auto-restart. Table 1 below lists recovery behaviour under various fault conditions.

Table 1: SZ1130-00 Recovery Behavior

Fault Protection SZ1130

Input Under Voltage Lockout (UVLO)/ Brown-Out Auto-Recovery Input Over Voltage Lockout (OVLO) Auto-Recovery

Internal Over Temp Protection (OTP) Hiccup

External Over Temp Protection (OTP) Hiccup

Peak Current Limit (PCL) Hiccup

Over-Power Protection (OPP) Hiccup

Output Short Circuit (OSC) Hiccup



DESIGN GUIDE

PCB Layout PCB Prints

Figure 4: : Component side horizontal board, top

Figure 5: Solder side horizontal, bottom



DESIGN GUIDE

Figure 6: Component side vertical board, top

Figure 7: Solder side vertical board, middle 1 (left) and 2 (right)

Figure 8: Solder side vertical board, bottom



DESIGN GUIDE

Bill of Materials (BOM) Description Designator Manufacturer Manufacturer part number

Horizontal Board (USB Type-C Connector)BRIDGE RECT 1PHASE 1KV 4A Z4-D BR1, BR2 Comchip Technology Z4DGP410L-HF

CAP CER 220NF X2 C1 W12.5H10T6 CAP ALUM 560UF 20% 25V T/H C5, C6, C20 YMIN SPE1EM681E160L CAP CER 0.1UF 50V X7R 0603 C7, Samsung Electro-Mechanics CL10B104KB8NNNC CAP CER 1UF 25V X7R 0603 C28 Samsung Electro-Mechanics CL10B105KA8NNNC

CAP CER 3300PF 25V X7R 0603 C31 AVX Corporation 06033C332KAT2A CAP CER 0.047UF 25V X7R 0603 C32 AVX Corporation 06033C473KAT2A CAP CER 8200PF 50V X7R 0603 C46 KEMET C0603C822K5RACTU CAP CER 10UF 25V X7R 1206, C8 TDK Corporation C3216X7R1E106K160AB

CAP CER 150PF 200V NPO 0805 C10 Yageo CC0805JRNPOABN151 CAP CER 10UF 25V X5R 0603 C30, C35 Murata Electronics GRM188R61E106MA73D CAP CER 0.1UF 50V X7R 0603 C34, C37 Samsung Electro-Mechanics CL10B104KB8NNNC CAP CER 270PF 50V X7R 0603 C36, C38, C39, C42 Yageo CC0603KRX7R9BB271 CAP CER 1000PF 25V X7R 0603 C40 KEMET C0603C102K3RACTU

CAP CER 1UF 35V X7R 0603 C41, C48 TDK Corporation CGA3E1X7R1V105K080AC CAP CER 0.033UF 50V X7R 0603 C43, C44, C47 Yageo CC0603KRX7R9BB333 CAP CER 0.022UF 50V X7R 0603 C45 Yageo CC0603KRX7R9BB223

C49

FUSE BOARD MNT 3A 250VAC 125VDC F1 Eaton - Electronics Division TR2/1025TD3-R

USB JACK, C TYPE, POWER ONLY, 6 J1 CUI Devices UJC-HP-3-SMT-TR L2

PTNG 120V N-FET PQFN56 (4mohm) Q1 ON Semiconductor FDMS4D0N12C MOSFET N-CH 25V 124A 8PQFN Q4 ON Semiconductor FDMC2D8N025S DNI RES 1206, DNI RES 1206, , R1, R2

RES SMD 470 OHM 1% 1/10W 0603 R8, Yageo RC0603FR-07470RL

RES 0 OHM JUMPER 1/10W 0603 R9 Stackpole Electronics Inc RMCF0603ZT0R00 RES SMD 0 OHM 1/10W 0603 R10 Yageo RC0603JR-070RL

RES SMD 84.5K OHM 1% 1/10W 0603 R14 Yageo RC0603FR-0784K5L

RES SMD 10K OHM 1% 1/10W 0603 R23 Yageo RC0603FR-0710KL DNI R40


RES SMD 1.5K OHM 1% 1/10W 0603 R43 Bourns Inc. CR0603-FX-1501ELF

RES SMD 7.5K OHM 1% 1/10W 0603 R46 Yageo AC0603FR-077K5L

RES SMD 47 OHM 1% 1/10W 0603 R20, R36 Yageo RC0603FR-0747RL RES 0.005 OHM 1% 1W 1206 R25 Bourns Inc. CFN1206-FX-R005ELF

RES SMD 1K OHM 1% 1/10W 0603 R35 Yageo RC0603FR-071KL

RES SMD 1M OHM 1% 1/10W 0603 R37 Yageo RC0603FR-071ML


RES SMD 10K OHM 1% 1/10W 0603 R39 Yageo RC0603FR-0710KL


RES SMD 47K OHM 1% 1/10W 0603 R44 Yageo AC0603FR-0747KL NTC thermistor 0603 5% RT3 Vishay Dale NTHS0603N17N2003JE

VARISTOR 430V 250A 2SMD NO LEAD RV1 Littelfuse Inc. V430CH8 PC TEST POINT NATURAL TP1, TP2 TE Connectivity AMP Connectors RCU-0C

WT6633P USB PD Controller QFN16 U2 Weltrend

FAST TURN-OFF INTELLIGENT RECTIF U3 Monolithic Power Systems Inc. MP6908AGJ-P

OPTOISO 5KV TRANSISTOR SO6L U4 Toshiba Semiconductor TLP383(D4BLLTL,E

Silanna Semiconductor and Transphorm

tdadp-sil-usbc-65w-rd-0v1


USER GUIDE

IC VREF SHUNT 36V 1% SOT23-3 U5 Texas Instruments ATL431AIDBZR

DIODE ZENER 24V 500MW SOD123, Z1 Diodes Incorporated DDZ24C-7,

DIODE ZENER 91V 500MW SOD123 Z3 ON Semiconductor MMSZ5270BT1G CAP CER 2.2nF 25V X7R 0603 C50 Murata Electronics

Vertical Board CAP ALUM 33UF 20% 400V T/H C2, C3, C26, C29 YMIN KCX(33UF-10X18P5) CAP CER 4.7UF 25V X6S 0603 C11 Murata Electronics GRM188C81E475KE11D

CAP CER 10000PF 25V X7R 0603 C12 KEMET C0603C103K3RACTU CAP CER 10000PF 25V X7R 0603 C14 Samsung Electro-Mechanics CL10B103KA8NNNC CAP CER 1000PF 16V X7R 0603 C15 Yageo CC0603KRX7R7BB102 CAP CER 10000PF 25V X7R 0603 C16 Samsung Electro-Mechanics CL10B103KA8NNNC

CAP CER 39PF 50V C0G/NP0 0603 C17 KEMET C0603C390J5GACTU CAP CER 10000PF 25V X7R 0603 C18 Samsung Electro-Mechanics CL10B103KA8NNNC

CAP CER 1UF 35V X7R 0603 C19 Taiyo Yuden GMK107AB7105KAHT CAP CER 100PF 200V NPO 0603 C24 Yageo CC0603JRNPOABN101 CAP CER 100PF 200V NPO 0603 C25 Yageo CC0603JRNPOABN101 CAP CER 150PF 16V X7R 0603 C27 Würth Elektronik 8.85012206029E+11

CAP CER 10000PF 630V X7R 1206, C9 KEMET C1206C103KBRACTU CAP CER 4700PF 630V X7R 1206, C13 TDK Corporation C3216X7R2J472K115AA CAP CER 10000PF 630V X7R 1206, C22 KEMET C1206C103KBRACTU

CAP CER 10UF 35V X7R 1206 C23 Samsung Electro-Mechanics CL31B106KLHNNNE CAP ALUM 68UF 80V 20% T/H C21 YMIN LKMC0902A190MF

CAP ALUM 47UF 20% 16V RADIAL C33 Rubycon 25YXJ47MTA5X11 DIODE GEN PURP 1KV 1A SOD123FA D1, D3 ON Semiconductor US1MFA

DIODE ZENER 4.7V 200MW D2 ON Semiconductor MM3Z4V7B DIODE ZENER 56V 200MW SOD323F Z2 ON Semiconductor MM3Z56VB

D4 D8

50NS 1A 300V HIGH EFFICIENT RECO

D6, D7 Taiwan Semiconductor

Corporation

HS1FFL DIODE SCHOTTKY 100V 250MA SOD323 D10 Nexperia USA Inc. BAT46WJ,115

FB1, FB2 CMC 9 mH 10X15 L1 CUSTOM_10X15

MOSFET 2N-CH 60V 0.35A Q3 Diodes Incorporated DMN61D9UDW-7 RES SMD 24.9 OHM 1% 3/4W 1206, R6 Vishay Dale CRCW120624R9FKEAHP

RES 0.18 OHM 1% 1/4W 1206 R16 Yageo, RL1206FR-070R18L RES 0.16 OHM 1% 1/2W 1206, R17 TE Connectivity Passive Product RLP73K2BR16FTDF

RES SMD 24.9 OHM 1% 3/4W 1206 R24 Vishay Dale CRCW120624R9FKEAHP RES SMD 22M OHM 1% 1/4W 0805, R3, R5, R7, R30 Stackpole Electronics Inc RMCF0805FT22M0

DNI RES 0805, R4 RES SMD 475K OHM 1% 1/10W 0603 R12 Yageo RC0603FR-07475KL

RES SMD 270 OHM 1/10W 0603 R13 Yageo RES SMD 10 OHM 1% 1/10W 0603 R15 Yageo RC0603FR-0710RL

RES SMD 14K OHM 0.1% 1/10W 0603 R18 Yageo RT0603BRD0714KL RES 120K OHM 1% 1/10W 0603 R19 Stackpole Electronics Inc RMCF0603FT120K RES 100K OHM 1% 1/10W 0603 R21 Stackpole Electronics Inc RMCF0603FT100K

RES SMD 10K OHM 1% 1/10W 0603 R22 Yageo RC0603FR-0710KL RES SMD 4.7 OHM 1% 1/10W 0603 R26 Yageo RC0603FR-074R7L

RES SMD 16.2K OHM 1% 1/10W 0603 R27 Yageo RC0603FR-0716K2L RES SMD 100 OHM 1% 1/10W 0603 R28 Yageo RC0603FR-07100RL RES SMD 47 OHM 1% 1/10W 0603 R29 Yageo RMCF0603FT47R0

RES SMD 3.3K OHM 1% 1/10W 0603 R34 Yageo RC0603FR-073K3L DNI R47

RES SMD 825K OHM 1% 1/10W 0603 R48 RES SMD 274K OHM 1% 1/10W 0603 R49 RES SMD 22K OHM 1% 1/10W 0603 R11 Yageo RC0603FR-0722KL

RES SMD 0 OHM 1/10W 0603 R31 Yageo RC0603JR-070RL RES SMD 619K OHM 1% 1/16W 0402, R32, Yageo RC0402FR-07619KL



DESIGN GUIDE

RES SMD 43.2K OHM 1% 1/16W 0402, R33, Yageo RC0402FR-0743K2L R45 Yageo

THERM NTC 100KOHM 4485K 0402 RT2 Murata Electronics NCP15WL104E03RC TRANSFORMER RM 8 T1 TBD YT-0803

Flyback PWM Controller with Integrated Active Clamp Circuit U1 Silanna Semiconductor SZ1130

DIODE, 800V, 200mA D12 Panasonic DA2JF8100L GaN Daugter Board

650V, 240mΩ, SuperGaN FET, PQFN88 Transphorm TP65H300G4LSG Q2



DESIGN GUIDE

Transformer Specification

Table 2: Transformer Material Lists



DESIGN GUIDE

Common-Mode Choke Specification

Table 3: Common-Mode Choke Material Lists

Material Specification Manufacturer Mfr. Part Number Core R12.5 × 7.90 × 6.35 mm dimension

(T38 -10000u) EPCOS/TDK or equivalent B64290L0742X038 or equivalent

AWG26 Magnet wire, dual insulation layer Various Separator PCB or Plastic



DESIGN GUIDE

Performance Data Electrical Data Efficiency DoE Level VI and CoC Version 5 Tier-2 4-point (25%, 50%, 75%, 100%) average efficiency, along with CoC Version 5 Tier-2 10% load efficiency requirements. Table 4: Load Efficiency Requirements

Vout/Iout DoE Level VI 4-Point Average Efficiency

CoC V5 Tier-2 4-Point Average Efficiency CoC V5 Tier-2 10% Efficiency

5 V/3.25 A 81.88% 81.84% 72.99% 9 V/3.25 A 86.87% 87.30% 77.60%

15 V/3.25 A 87.77% 88.85% 78.99%

20 V/3.25 A 87.54% 89.16. % 79.16%

The following efficiency data are averaged from 18 RD-19 65W boards. The boards are soaked for 5 minutes before measuring the efficiency with output measured after the USB-PD disconnect FET.

115 Vac 4-point average efficiency

VOUT / ILOAD_MAX = 5 V / 3 A %LOAD Efficiency (%) Average Efficiency (%)

100 91.66

89.98 75 91.42

50 90.38

25 86.47

10 83.64


100 93.52

92.24 75 93.24

50 92.49

25 89.70

10 83.52


100 93.84

93.36 75 93.90

50 93.66

25 92.05

10 86.42



DESIGN GUIDE

VOUT / ILOAD_MAX = 20 V / 3.25 A %LOAD Efficiency (%) Average Efficiency (%)

100 93.57

93.33 75 93.68

50 93.64

25 92.44

10 87.31

230 Vac 4-point average efficiency


100 89.013

86.34 75 88.00

50 85.20

25 83.15

10 80.82


100 92.45

89.74 75 91.24

50 90.10

25 85.17

10 81.33


100 93.93

92.30 75 93.46

50 92.14

25 89.65

10 83.55

VOUT / ILOAD_MAX = 20 V / 3.25 A %LOAD Efficiency (%) Average Efficiency (%)

100 94.33

93.05 75 94.07

50 93.26

25 90.52

10 84.20



DESIGN GUIDE

Full Load Efficiencies at 90Vac / 115Vac / 230Vac / 265Vac; 5V / 9V / 15V / 20V (measured after the USB-PD disconnect FET)

Vout = 5 V Vin Iout Efficiency (%)

90 Vac @ 50 Hz 3 A 91.46

115 Vac @ 60 Hz 3 A 91.66

230 Vac @ 50 Hz 3 A 89.01

265 Vac @ 50 Hz 3 A 88.27


90 Vac @ 50 Hz 3 A 92.98

115 Vac @ 60 Hz 3 A 93.52

230 Vac @ 50 Hz 3 A 91.79

265 Vac @ 50 Hz 3 A 91.65


90 Vac @ 50 Hz 3 A 93.10

115 Vac @ 60 Hz 3 A 93.84

230 Vac @ 50 Hz 3 A 93.94

265 Vac @ 50 Hz 3 A 93.52


90 Vac @ 50 Hz 3.25 A 92.39

115 Vac @ 60 Hz 3.25 A 93.57

230 Vac @ 50 Hz 3.25 A 94.33

265 Vac @ 50 Hz 3.25 A 94.16



DESIGN GUIDE

Efficiency Graphs

The following graphs demonstrate 5 V/ 9 V/ 15 V/ 20 V efficiency results with output measured after the USB- PD disconnect FET.

Figure 9: Efficiency graphs for various output voltages and load currents



DESIGN GUIDE

Table 5 lists average no-load power consumption of 18 boards across the input voltages.

Table 5: No-load Power Consumption

Input Voltage (Vac) No-Load Power (mW) 115 57.6 230 66.1



DESIGN GUIDE

Key Waveforms The key waveforms for the worst case voltage conditions as seen by the primary side GaN Transistor and secondary side MOSFET are shown below. Due to the active clamp operation of SZ1130, there is practically no voltage spike at the switching node as shown in the following figures.

Vin=265 Vac, Vout=20 V, Iout=3.25 A Vds_pri (max) = 553V

Vds_sec (max) = 101.9V

Vin=265 Vac, Vout=20 V, Iout=0 A Vds_pri (max) = 539V

Vds_sec (max) = 115.7V

Figure 10: Voltage stress on the primary and secondary side MOSFET during worst case operating conditions



DESIGN GUIDE

Conducted EMI Scans The following conducted EMI measurements demonstrate more than 6 dB margin is maintained under all input (115 Vac/ 230 Vac) and output voltage (5 V/ 9 V/ 15 V/ 20 V) conditions with floating output.

Vin=115 Vac, Vout=5 V, Iout=3 A Vin=115 Vac, Vout=9 V, Iout=3 A

Vin=115 Vac, Vout=15 V, Iout=3 A Vin=115 Vac, Vout=20 V, Iout=3.25 A


TDADP-SIL-USBC-65W-RD DESIGN GUIDE

Vin=230 Vac, Vout=5 V, Iout=3 A Vin=230 Vac, Vout=9 V, Iout=3 A

Vin=230 Vac, Vout=15 V, Iout=3 A Vin=230 Vac, Vout=20 V, Iout=3.25 A

Figure 11: Conducted EMI test results under various operating conditions



Output Voltage Ripple Noise The output voltage ripple was measured using a voltage probe with two capacitors (1 µF/50 V ceramic and 33 µF/50 V

low ESR electrolytic) tied in parallel across it. Measurement done at load side using an E-Mark USB cable.

Table 6: Output Voltage Ripple Summary

Input Voltage (Vac) Vout / Iout Measured Output Ripple (mVpk-pk)

115

5V / 0A 34.67 5V / 3A 40.53 9V / 0A 22.18 9V / 3A 46.71

15V / 0A 19.64 15V / 3A 52.67 20V / 0A 21.24

20V / 3.25A 77.64

230

5V / 0A 67.02 5V / 3A 45.56 9V / 0A 40.27 9V / 3A 36.09

15V / 0A 34.49 15V / 3A 46.93 20V / 0A 29.91

20V / 3.25A 55.56

a. 115Vac 60Hz

Vin = 115Vac, 60Hz; Vout = 5V; Iout = 0A Vin = 115Vac, 60Hz; Vout = 5V; Iout = 3A





Vin = 115Vac, 60Hz; Vout = 20V; Iout = 0A Vin = 115Vac, 60Hz; Vout = 20V; Iout = 3.25A

b. 230Vac 60Hz






Vin = 230Vac, 60Hz; Vout = 20V; Iout = 0A Vin = 230Vac, 60Hz; Vout = 20V; Iout = 3.25A

Figure 12: Output Voltage Ripple Waveforms under various operating conditions



Thermal Measurements The key component temperatures are shown below for 90Vac and 265Vac full load (20V/65W) operating conditions after 1hr bake time.

RefDes Description Temp. at 90Vac Temp. at 265Vac U1 SZ1130-00 83.1 72.3

BR1 Bridge Rectifier 92.2 55.3

T1 Transformer 93.1 90.6

Q2 Transphorm GaN Device 91.4 88.7

Q1 Secondary SR MOSFET 87.7 84.3

TOP VIEW 1 Vin = 90Vac, Vout = 20V, Iout = 3.25A

Bx1 = Transphorm GaN FET, Bx2 = Transformer

TOP VIEW 2 Vin = 90Vac, Vout = 20V, Iout = 3.25


HORIZONTAL BOARD, COMPONENT SIDE Vin = 90Vac, Vout = 20V, Iout = 3.25A

Bx1 = Bridge Rectifier, Bx2 = Secondary SR MOSFET

VERTICAL BOARD, COMPONENT SIDE Vin = 90Vac, Vout = 20V, Iout = 3.25A

Bx1 = SZ1130-00



TOP VIEW 1 Vin = 265Vac, Vout = 20V, Iout = 3A


TOP VIEW 2 Vin = 265Vac, Vout = 20V, Iout = 3A


HORIZONTAL BOARD, COMPONENT SIDE Vin = 265Vac, Vout = 20V, Iout = 3.25A

Bx1 = Bridge Rectifier, Bx2 = Secondary SR MOSFET

VERTICAL BOARD, COMPONENT SIDE Vin = 265Vac, Vout = 20V, Iout = 3.25A

Bx1 = SZ1130-00

Document 11075 Ver. 1.0

Revision History Revision Date Author Note

1.0 Mar. 12, 2021 Results collected and report generated.

2.0 Apr. 28, 2021 Average data for 18 boards.

Hardware Info Info Value

Timestamp April 29, 2021 Primary IC Silanna Semiconductor Integrated Flyback PWM Controller (SZ1130-00)

Primary Switch Transphorm 650 V SuperGaN™ FET (TP65H300G4LSG) Secondary IC Weltrend WT6633P

AC Supply Chroma Programable AC Source, 61502 Input Meter Yokogawa WT310E

Output Meter Chroma 66205 Oscilloscope Teledyne Lecroy HD04054A

No-load bake time 300 Input voltages [(90, 60), (115, 60), (230, 50), (265, 50)]

Output voltages [5, 9, 15, 20]

Silanna Semiconductor Proprietary and Confidential Information furnished by Silanna Semiconductor is believed to be accurate and reliable. However, no responsibility is assumed for its use. Silanna Semiconductor makes no representation that the interconnection of its circuits as described herein will not infringe on existing patents rights.

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DESIGN GUIDE TDADP-SIL-USBC-65W-RD Description SZ1130 …

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