DDR Penetrates Mobile Computing

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San Jose San Jose January 23-24, 2001 January 23-24, 2001 Taipei Taipei February February 14-15, 2001 14-15, 2001 DDR Penetrates DDR Penetrates Mobile Computing Mobile Computing Bill Gervasi Technology Analyst Chairman, JEDEC Memory Parametrics Committee

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DDR Penetrates Mobile Computing. Bill Gervasi Technology Analyst Chairman, JEDEC Memory Parametrics Committee. Agenda. Why DDR for Mobile? Standard versus cached DRAMs DDR Configurations Introducing the DDR MicroDIMM Mobile System Design Guidelines. Reasons for DDR in Mobile. - PowerPoint PPT Presentation

Transcript of DDR Penetrates Mobile Computing

Page 1: DDR Penetrates Mobile Computing

San JoseSan Jose January 23-24, 2001 January 23-24, 2001 TaipeiTaipei February 14-15, 2001 February 14-15, 2001

DDR PenetratesDDR PenetratesMobile ComputingMobile Computing

Bill Gervasi

Technology Analyst

Chairman, JEDEC Memory

Parametrics Committee

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AgendaAgenda

• Why DDR for Mobile?

• Standard versus cached DRAMs

• DDR Configurations

• Introducing the DDR MicroDIMM

• Mobile System Design Guidelines

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Reasons for DDR in MobileReasons for DDR in Mobile

• Performance

• Power

• Form factors

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SDRAM EvolutionSDRAM Evolution

1000MB/s

2700MB/sMainstreamMemories

SDR

DDR333

Simple,incrementalsteps

DDR II4800MB/s

2100MB/s

DDR266

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Power: DDR vs SDRPower: DDR vs SDR

0

0.5

1

1.5

2

2.5

3

3.5

Throughput per Second per Unit Power

PC-100

1X

DDR-266

3.2X

PC-133

0.8X

DDR-333

2.6X est.

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DDR Power ManagementDDR Power Management  Relative

PowerCPU ClockLatency**

Active on 100% 0 x 5 = 0

Inactive on   3 x 5 = 15

Active off   1 x 5 = 5

Inactive off 0.2% 4 x 5 = 20

Sleep  0.4% 200 x 5=1000

PowerState*

12%

4%

* Not industry standard terms – simplified for brevity** Assuming memory clock frequency = 1/5 CPU frequency

Op

enP

age

Clo

sed

Pag

e

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Implications: Mobile PowerImplications: Mobile Power

• Encourages closed page policy– Precharge banks as soon as data read– Takes latency hit to reactivate

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Closed Page Power ProfileClosed Page Power Profile

NOP ACT R R PRE NOP

NOP ACT W W PRE NOP

Command Activity

Power Profile

Power Profile

Command ActivityLower Power

Higher Power

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Cached DRAM Power ProfileCached DRAM Power Profile

NOP ACT R-PRE R R NOP

NOP ACT W W PRE NOP

Lower Power

Higher Power

Command Activity

Power Profile

Power Profile

Command Activity

Depending on cached DRAM architecture

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Standard vs CachedStandard vs Cached

• Cached DRAM architectures save power– Improved closed page performance– Latency reduction on page hits– Lower power profile

(See my other presentation at Platform 2001… “An Analysis of Virtual Channel and Enhanced Memories Technologies”)

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DDR ConfigurationsDDR Configurations

TSOP-II

SO-DIMM

DIMM

TQFP

NEW!MicroDIMM

NEW!FBGA

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Next: Small PackagesNext: Small PackagesFBGA (fine pitch BGA)

•Lower inductance•Lower capacitance•Smaller footprint•Tighter layouts enabled

Details:

Package size = 104 mm2 = 54% smaller

Inductance: 1.7nH lower

Inductance variation, pin to pin: 3X less

Capacitance: 0.5pF lower

Performance gain: 300ps of data valid time

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DDR Chip ConfigurationsDDR Chip Configurations• TQFP devices for point to point

– x32 … 64Mb, 128Mb coming– 100 pins, 16 x 22 mm footprint

• TSOP devices– x4, x8, x16 … 64Mb, 128Mb, 256Mb– 66 pins, 12 x 22 mm footprint

• FBGA selection in process– x4, x8, x16 … 128Mb, 256Mb, 512Mb/1Gb coming– 60 ball, 6.4 x 11 mm minimum footprint

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DDR Module ConfigurationsDDR Module Configurations• DDR SO-DIMM – done!

– Sockets, modules in production

• DDR MicroDIMM – in process– Task group active

• System application combinations– One module only– Soldered down + module– Two modules

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Next: DDR MicroDIMMNext: DDR MicroDIMM

• Half the size of the DDR SO-DIMM• Half the capacity if using TSOP

– or –• Same capacity if using FBGA• Target markets:

– PDAs– Internet appliances– Subnotebook computers

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SO- and Micro- DIMMsSO- and Micro- DIMMs

DDR SO-DIMM

TSOP:67.6 x 31.75 mm = 2146 mm2

4 or 8 devices

200 pins on 0.6 mm pin pitch(supports ECC)

---------------------

FBGA:Under consideration if needed

DDR MicroDIMM

TSOP:45.5 x 30 mm = 1365 mm2

4 devices

172 pins on 0.5 mm pin pitch(no ECC)

---------------------

FBGA:45.5 x 25 mm = 1137 mm2

4 or 8 devices

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Module StatusModule Status

• DDR SO-DIMM– DDR266 validated– DDR333 under analysis– Looking okay to 333 MHz with TSOP

• DDR MicroDIMM– TSOP easy, DDR266/333 speeds– FBGA package needed to fit 8 chips– Possible schedule

• Sample April 2001• Approved spec June 2001

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Module DensitiesModule Densities

SO-DIMM MicroDIMM

RawCard

64(Mb)

128(Mb)

256(Mb)

RawCard

64(Mb)

128 (Mb)

256 (Mb)

A: 8 TSOPs(MB) 64 128 256 A: 4 TSOPs

(MB) 32 64 128

B: 8 TSOPs(MB) 64 128 256 B: 4 FBGAs

(MB) 32 64 128

C: 4-5 TSOPs(MB) 32 64 128 C: 8 FBGAs

(MB) 64 128 256

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Small System ConfigurationsSmall System Configurations

• One data bus, one address bus

• Point to point, single socket– Series damped data, address, clock

• Two sockets– SSTL_2 terminated data– Series damped address, clock– Top/bottom or butterfly arrangement

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Top/Bottom Mobile ModulesTop/Bottom Mobile Modules

• Standard for many current full size notebooks• Hard to get at one of the modules• Thickest form factor

CPU

Socket Module

CPUModule SOCKET

Motherboard

Note: There may be patents regarding use of these layouts

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Butterfly Mobile ModulesButterfly Mobile Modules

• Perfect for thin/light notebooks & subnotes• Single access door to both modules• Also good for small form factor desktop PCs

CPU

Module Socket

CPUModule SOCKET

Motherboard

-- or --

Note: There may be patents regarding use of these layouts

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MicroDIMM DesignsMicroDIMM Designs

You know the DDR SO-DIMM, so…

…let’s focus on the MicroDIMM design

First, system configurations…

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Clock TopologyClock Topology

RAM

RAM

RAM

RAM

CK

CK

25

25

Conn

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Data Topology, 1 SlotData Topology, 1 Slot

RAM

RAM

DQ, DQS, DM

25Conn

22

2 bank

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Data Topology, 2 SlotData Topology, 2 SlotRAM

RAM

DQ, DQS, DM

25Conn

22

Conn

RAM

RAM22

25 VTT

2 bank

2 bank

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A/C Topology, 1 SlotA/C Topology, 1 SlotRAM

A, BA, WE,

RAS, CAS

10Conn

RAM

RAM

RAM

RAM

RAM

RAM

RAM

Two Bank

MicroDIMM

shown

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A/C Topology, 1 SlotA/C Topology, 1 Slot

10Conn

RAM RAM RAM RAM

11pF

One Bank

MicroDIMM

shown

A, BA, WE,

RAS, CAS

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A/C Topology, 2 SlotA/C Topology, 2 Slot

10Conn

Conn

RAM RAM RAM RAM

11pF

Two Bank

MicroDIMM

shown

One Bank

MicroDIMM

shown

A, BA, WE,

RAS, CAS

RAM

RAM

RAM

RAM

RAM

RAM

RAM

RAM

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CS & CKE TopologyCS & CKE Topology

CS, CKE

10Conn

RAM RAM RAM RAM

One or Two Bank

MicroDIMM

shown

11pF

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Increasing Focus on SystemsIncreasing Focus on Systems

• JEDEC packaging committee charter extended to include module sockets– Land pattern for pin pads– Mechanical support tab locations– Orientation holes– Shadow area of socket body– Module height & centerline

• Working system configuration first time!

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DDR MicroDIMM ClearancesDDR MicroDIMM Clearances

Standard socket, double sided memory module

Reverse socket, double sided memory module

Reverse socket, single sided memory module

Standard socket, single sided memory module

4.43mm max

0.65mm min

3.78mm max

5.40mm max

3.78mm max

discretes

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Socket Spec StatusSocket Spec Status

• Merging 144, 172 pin sockets into single parameterized MO-214 spec– Priming spring included

• Shoves module “to the left”

– Redimensioned by left edge, not center– Edge bevel defined

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ConclusionsConclusions

• DDR solutions for mobile growing

• Cached DRAM would be even better

• Point to point and DDR SO-DIMM done

• DDR333 development in progress

• FBGA packaged DDR coming

• DDR MicroDIMM development on track

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Memory of choice for the future

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Thank YouThank You