DBM 03

: :. . .

, j 2004.

DBM 03 1

...................................................................................................................3

1. DBM 03 .............4

1.1. ...................................................................................41.2. DBM-PS ...............71.3. DBM 03 ...............................................................12

1.3.1. DBM 03 .........................................................121.3.2. DBM 03 .......................................................15

2. IGBT ................................................18

2.1. ................................................182.2. PT-IGBT NPT-IGBT .............25

2.2.1. ...............252.2.2. .....................................................................272.2.3. ...........................................................................272.2.4. .........................................................................................272.2.5. ..........................................................................28

2.3. IGBT ........................292.4. IGBT

.......................................................................................312.4.1. .............................................322.4.2. .............................................402.4.3. ........................................422.4.4. ......................................462.4.5. ................................................................49

2.5. IGBT...................50

2.6. IGBT ......................542.6.1. IPM ........................................................542.6.2. IGBT ....................................552.6.3. IGBT ................................................602.6.4. SiC .................................................................63

3. IGBT DBM 03 ................64

3.1. “ ” ...................................................64

2

3.1.1. ..........................................................................................643.1.2. ....................................................................653.1.3. ..................................................................67

3.2. “ ” .....................................................683.2.1. ..........................................................................................683.2.2. ....................................................................683.2.3. ..................................................................69

4. DBM 03 DBM-PS ...........................................70

4.1. DBM 03 ..................................................................704.1.1.

....................................................................704.1.2. .............................724.1.3. .............................744.1.4. ......754.1.5. ...............................................................784.1.6. ...............................................................784.1.7. IT .........................................................................................804.1.8. ...........................................................814.1.9. Incoherence Phase .............................................................814.1.10.

.................................................................................844.2. DBM-PS .................................................................84

4.2.1. DBM-PS ................................................844.2.2. ...................................................85

5. ...88

5.1. ..................................................................885.1.1. .............885.1.2.

PWM ............................................................895.2. .....................................................................93

5.2.1. DBM 03 .............................................935.2.2. ................................................................................95

6. DBM 03 .......97

6.1. DBM 03 .............................................976.2. DBM 03 ..................................................... 100

............................................................................... 103

................................................................................................ 104

1 ...................................................................................................... 107

2 ...................................................................................................... 111

DBM 03 3

Vickers 1 . DBM 03 .

,. DBM 03

, , DBM-PS .DBM 03 , .

IGBT ,. ,

IGBT ( DBM 03) .

e ., , IGBT , ,, DBM 03 .

IGBT ,.

DBM 03, DBM-PS. ,

.

,, . Ta ,

.PWM ,

.

DBM 03 , ( ) ,

.

, , datasheet IGBTDBM 03 , DBM 03 .

1

Moog Inc., Electric Drives Group, East Aurora, NY 14052-0018, www.moog.com

DBM 03 4

1. DBM 03

1.1.

DBM 03 (Digital Brushless Multiaxis) ,, , ,

( .).

, ..

( ) , ,,

. , ,, low-pass

,, PI

. IGBT ,, . .

PWM (SPWM) .DBM 03

( , ), , 1.1.

1.1. DBM 03

[A] [A] [A] 2

DBM 1.5 1.5 3.5 5DBM 2.5 2.5 5.3 7.5DBM 5 5 10.6 15DBM 10 10 18 25DBM 15 15 32 45DBM 25 25 50 70DBM 50 50 100 140DBM 70 70 127 180DBM 80 80 170 240

Power Supply DBM - PS 100 - 300

2 1s , 4.5s .

DBM 03 5

. DBM 03DBM–PS (Power Supply).

DBM 03 , DBM-PS , 1.2 1.3, .

1.2. DBM 03

300V ± 10% 180V

1.1

1.3. DBM-PS

220V ± 10%, 50/60 Hz 220V 110V( ) ±10%

50/60 Hz55W , 60W

300V ± 10%

1.1

DBM 03 RS485, PC ,

RS232 / RS485 full-duplex.

:

Autophasing- , . o (

[Nm]/[A])

( ) TTL – Drive OK (), .

, ,.

DBM 03 6

:

/ ( )

()

, (),

, ,

:

Drive OK ( )Drive Enable ( )Motor OK ( )Reference Enable ( / )

,Master, Slave.

DBM 03 , DBM-PS ,.

DBM 03 :

IT

Incoherence Phase

DBM 03 (DBM-PS ) :

.

DBM 03 7

1.2. DBM-PS

DBM-PS , ,DBM 03 . , DBM-PS

..

1.1, ,DBM-PS . ,

,. , Low Voltage Enable,

,. DBM-PS-

, DBM 03 ,, DBM 03

DBM-PS .

DBM-a ( ) 300V±10%,

220V±10%, 50/60Hz , , 470μF/400V (

PWRSPLY2 ). , ( ):

sr3 6 297.104VU E (1.1)

– .

, off-line flyback( PWRSPLY1 ). , ,

220V/110V( )±10%,, “ ”

470μF/250V. . MOSFET BUP302,

20kHz. BUP302TL2844, PWM

(current mode PWM controller). Totem-polesource sink 1 ,

CGS CGD, ,. R6 .

pull-down . VGS=0V,

DBM 03 8

1.1. DBM-PS

DBM 03 9

. R5.

TL2844 R18C32 39kHz, :

18 32

1.72[kHz][k ] [μF]

fR C

(1.2)

, OP2 Q6,PWM100A ( PWRSPLY1),

40kHz. 2, R14 R15, R17. RC

R16 C31, RC R10 C29

R8,,

. , , R8, ( )

3. (1.3)

PIN1PK

1.4V3

VV (1.3)

( 1 ), RS flip-flop,, “ ”

totem-pole , .. cycle-by-cycle .

(), 1V.

. , 1V, ,

6 “ ” 5, . ,0TR (

).:

PK(max)8

1VIR

(1.4)

, 10 .D4, R2, C10,

( .) .

DBM 03 10

TL431, Q3. ,8V .

R11 R12P1.

2.5V, ,OP1. ,

“ ” , 8V.

TL2844,,.

8V, OP1P1, .

.

:

-15V -AT, -15V(-AT)+18V(-AT)+18V(0L) -18V(0L)+8V(0L) 0L

“-AT ” , “0L” ( , ). ,

, 10V(0L) 10kHz (

PWM ),, ±18V(-AT) 158kHz (

). ( )

, PWM100A,PWRSPLY1.

PWM100A, , 10kHz , (

PWM23B).TDA2030 (

18W), 10V(0L) 10kHz.

.

,, 316kHz,

PWM , SG2524.

DBM 03 11

,. 12 11,

13 14, .SG2524 R54

C68 300kHz, (PWM100A), 3,

316kHz. C68, 0.5μs.

1 2. , ( 1 9),

( , 8) 2. 5V,

16. ,R41 R42,

4V. “ ” , 0.6V 3.5V, 45%

..

, 4 5, , 200mV ( , ).

,. 5 (

-18V(-AT), ), 4 ,R80 R86, R66,

.Q15 Q19 31 . SG2524

, 10. , ( . -18V(-AT)).

Q19 ,.

SG2524. 13 14, . 13 Z6

8V(-AT), . 26V -18V(-AT) (, -18V(-AT)).

SG2524, (26V) 14. D23,

Q21. Z13 Z14,Q19 15.5V ,

. C76,Q19.

10V. , , SG2524 ,Q21, Q19

-10V C76. “ ”Q19, .

R55 R64, R78 R79 ., ,

158kHz ±18V(-AT).

DBM 03 12

. ,, . ,

.,

, PWM “ ”. ,

, .,

, .

, IGBT

375V. , DBM-PS 3.9 , 370W. , ,

DBM-PS8.2 , 370W.

.

1.3. DBM 03

DBM 03 , , :.

1.3.1. DBM 03

DBM 03 :Full-bridge IGBT

IGBTPWM

,

DBM 03 1.2 , .

,.

DBM

03

13

1.2

. D

BM

03

DBM 03 14

DBM-PS . 158kHz “ ” (

+ ). ,

. , , ,. ,

..

158kHz- , ±18V(-AT), (

). 1:1.

( ) . 10kHz

DBM-a,

. , ,PWM .

ANALOG1. 10kHz- , 46, 11,MC33002 .

clock ( 3) D flip-flop-a MC14013, ( 2) ( 5).

D flip-flop-a ( 1) , , ,

±10V(0L). Z8 ±10V(0L).

1.2 ,

. 1.2 ,

.

DBM 03 15

1.3.2. DBM 03

DBM 03 ,.

DBM 03 :80C31

(DSP) TMS320E14Personality Card

-RS485RAM EPROMA/D D/A ,

DBM 03 1.3, .

80C31 ,DSP-a RS485 .

. , :

.

().

(, , .),

( , ).

[1].

TMS320E14 ,low-pass . DSP

, - ,(dq to abc).

DBM

03

16

1.3

. D

BM

03

DBM 03 17

Personality Card EEPROM (Electrically Erasable Programmable Read Only Memory)

( , Baud rate.). , ,

. , G2 (

CNC-a, PC-a, ).

-, (

) , DSP- .

DBM-a .,

7V 100 . , :

, 128–1024 . B 90°,

, .

C ,.

, , B, C.

DBM 12- D/A A/D,

.

IGBT 18

2. IGBT

2.1.

IGBT (Insulated Gate Bipolar Transistor) , ,,

MOSFET-a (Metal Oxide SemiconductorField Effect Transistor). 2.1 N-IGBT .

N+

N-

N+

P+

PP

SiO

Al

( PT IGBT )

2.1. N-IGBT

N-IGBT-aPT .

N-IGBT ..

, (enhancementtransistors) (depletiontransistors),

. IGBT-aMOSFET-a, ,

P

DBM 03 19

IGBT-a. ,. SFET , ,

( ), IGBT . 2.1

( , ) ( ,

), -. ,

( ) “ ”, . .

. double-implanted gate ,, IGBT-a, MOSFET-a.

, . trench-gate . “ ” ,

, “ ”, .. . IGBT

, IGBT “ ” , “ ”. IGBT,

MOSFET, , 2.1, , .

IGBT 100000 cm2, SFET 820000 [2] cm2,

0.3 – 1.5 cm2.P

, (N- ) (

).

( ). 2.1

PT IGBT-a (PT je ,), .

(- ) .

( )IGBT ( ,

- ). ,,

( , 30% “ ”).

IGBT 2.2.

IGBT 20

N+

N-

N+

P+

P-

N+

P+

SiO2

Al

+ -

+

+

+

+

+

++

+

+

+

++ +

-

-

-

-- -

-

-

-

-

---

+

+

+

+

+

+

+

+

+

+P+

P-

2.2. IGBT-a

IGBT ( N-IGBT

, P-IGBT-a ),(SiO2),

().

(P- ) .. ,

, ( ,

) . MOSFET., , IGBT MOSFET-a

P+ ( ) ., N- (

), (P+ )P+ ,

. ,, . P+

N- ( PT IGBT-a). N-

( , ),

,

DBM 03 21

. , .MOSFET-a, IGBT-a , ,

. je ,

RCE(on) ( . RDS(on) MOSFET-a) IGBT-aMOSFET-a. 95% MOSFET-a

. ,,

, .IGBT-a MOSFET- . MOSFET-a

, ,VDS, [2]:

DS(on) DS(BR) 2.4,2.6R k V (2.1)

k –

[3], 1.6 .MOSFET 1000V, IGBT-a

.

, , eIGBT-a.

IGBT-a , , ( N-IGBT-a) (

). (MOSFET-a) - .

, , ,, .

,IGBT-a . “ ” ,

“ ” . 2.3, .

,. “ ”, “ ”

,. “ ”

,, IGBT

.

P+, (latch-up

e ),. ,

.

IGBT 22

2.3. “ ” IGBT 3

. Latch-up 2.4.

N+

N-

N+

P+

P-

N+

P+

SiO2

Al

P+

P-R

R C

R

GC

B

D

CGE

CCE

G

2.4. IGBT-a

3 [3]

DBM 03 23

2.4 IGBT. latch-up

IGBT , . ,N-IGBT, N-MOSFET ,

NPN .(N- ), P ( ),

. ,,

RB . IGBT- P+ , N- , P , PNP

. RD ,PNP . RG ( , ) .

CGE ,SiO2.

. CCE PN.

IGBT-a, ,. CGC Miller- .

,SiO2 . Miller-

, . 2.4 , , 2.5.

RD

CCE

RBCGE

CGC

RG

2.5. IGBT-a

2.4 PNPN : P+ , N-, P , N+ . O PNPN

( 2.5).

IGBT 24

Latch-up .IGBT ,

. latch-up , NPN, :

PNP NPN PNP NPN T E1, ,M (2.2)

:PNP - PNP

NPN - NPN

T -

E -M -

NPNIGBT-a,

P ( . RB ), NPN . ,

, (2.2) . IGBT-a , . latch-up .

. latch-up., dv/dt IGBT-a,

,NPN .

IGBT-a ( NPN) . .

latch-up. latch-up, ,IGBT-a, ,

dv/dt .Latch-up

, RB. ( 2.2 2.4 ),

N+ . ,, NPN .

, PNP ,. ,

PNP latch-up ,, VCE(on) .

latch-up IGBT, latch-up-a

15 .

DBM 03 25

2.2. PT-IGBT NPT-IGBT

2.2.1.

,IGBT , : PT (Punch Through) NPT (Non PunchThrough) . PT NPT

N+ ( 2.1) PT, NPT . ,

. PT , ,

P+ N-. MOS

- . PT-IGBTIGET (E : epitaxial) .

PT , NPT-IGBT-aN- MOS -

, ,P+ .

,P+ . N-

, NPT IGHT (H : homogeneous)., , PT-IGBT ,

NPT-IGBT .

. , ,P+ N- ,

.,

PT ,VCES ( . 600V IGBT

80μm). P+ ,, . ,

, , “ ” ,

. , P+N+ , . .

, “ ”. , .

IGBT 26

(minority carrier lifetime control).

, X - ,.

, . ,.

, ( . “ ”ZVS-a). ,

VCE(on) , ., NPT ,

P+, , ,. , NPT

., P+

, VCE(on) .

latch-up. ,

latch-up NPN(2.2) .

PT IGBT-a, PNP ( P+ ), latch-up

( . N-N+ ) PNP-a.

,,. 40-45%

PT-IGBT-a., PNP

NPT-IGBT-a, P+. P+ ( E 0.5 )

PNP ,PNP-a,

.NPT-IGBT 20-25% .

P+ , 600V- PT-IGBT 400μm, 100μm 600V- NPT-IGBT-a

( 1μm, 100μm), . NPT-IGBT-a 25%

PT-IGBT-a,PT NPT .

DBM 03 27

2.2.2.

, NPT ,, VCE(on) , PT .

, VCE(on) NPT-IGBT, . , VCE(on)

PT-IGBT .

,. ,

,,

, .VCE(on) (

), , ,PT-IGBT

.VCE(on) , PT

VCE(on) NPT .

2.2.3.

.PT-IGBT , , ,

NPT-IGBT-a. NPT-IGBT

T=125°C, PT-IGBT. NPT ,, , PT .

P, PT.

2.2.4.

a NPT-IGBT, PT-IGBT . o

NPT (avalancheenergy) PT . NPT

IGBT 28

PNP ,. NPT

IGBTNPT , PT .

2.2.5.

PT, NPT .(reverse recovery current) , ,

, , ,. ,

NPT ,, PT 2.2.3 .

NPT-IGBT ( VCE(on) ),

. ,, ,

RCE(on) (). ,

..

PT-IGBT , , ( VCE(on) ),

. PT-IGBT,

,. , ,

.,

VCE(on) , .

DBM 03 29

2.3. IGBT

N-IGBT- 2.6 .

IC

VCEVGE0< VGE(th)

VGE1>VGE0

VGE2>VGE1

VGE3>VGE2

VGE4>VGE3

VGE5>VGE4

V(BR)CES

IGBT

IGBT

2.6. N-IGBT-a

IGBT ( 2.6).

,, VGE .

VGE . , VGE(th) ,. (VCE > 0),

.VCE , . VCE , ,

V(BR)CES (BR: breakdown) ,, . PIN : P+ / N-

/ N+ ( 2.1)VGE , VGE(th) ,

. ,, :

.

IGBT 30

( 2.6)VGE . ,

( ),. ,

VGE , . VGE,

:

Cfs

GE

dIg

dV(2.3)

2.7, .

2.7. N-IGBT

( 2.6

IC

VGE

VGE(th)

Cfs

GE

dIgdV

VCE , . IGBT,

. IGBT, . ,

. ,IGBT ,

, . .

),VGE , VGE(th) . ,

, ., VCE( n) ,

. ,, PT-IGBT-a ,

NPT-IGBT-a .

DBM 03 31

( 2.6) V < 0 . PN

.IGBT 15V.

,. NPT-IGBT

,

. PT-IGBT , ,N+ .

CE

2.4. IGBT

IGBT ,

2 IGBT 6MBI 30L-060

.

,. ,

., .

,,

. ,

.

,. ,

,.

IGBT ,.

FUJI ELECTRIC, DBM 03 .

IGBT 32

2.4.1.

, VCES

,

, VGES

, VGEM

M

IC1 IC2

IC1 IC2

25°C , IC2

25°C.

, .

..

- . 80V, 20V.

.,

,Miller- .

/ VGE , ( ), /

.- ,

( ),

.

, (junction temperature). ,

. IC1

DBM 03 33

, . IC2,

, ICM

,

( 2.6

25°C .

. :

) .

latch-up . ,

ICM

,

,

, - ,,

.

. ICM “ ”.

, ICM,

latch-up-a.

.

, .

.

. ,, ,

, VCE(on) , .

IGBT 34

e: ILM , FBSOA, RBSOA SCSOA

( ),

,- , , .

ILM

. IGBT-a ( , .).

2.8 .

+

IGBT

VCC

2.8. IGBT

, VCE( ) VCC .

, ( 2.1) IGBT-a, “ ”

IGBT-a. ..

,( 2.4) .

NPN , latch-up IGBT-a ( PNP). ILM , ,

latch-up-a, RBSOA .

RBSOA (Reverse Biased Safe Operating Area), ., VCE

IC , ,.

VCE “ ” , .VCE .

DBM 03 35

,,

IGBT-a 4

.RBSOA

, VCE

. 2.9 ( ).

2.9.

. RBSOAlatch-up-a . RBSOA

PNP .

FBSOA (Forward Biased Safe Operating Area), .

IC , ,. ,

( 2.8). 2.10 .

2.10. IGBT-a 4

4 [5]

IGBT 36

FBSOA. FBSOA RBSOA,

., V

., .

. 2.11 .

2.11. 5

, ,

.

SCSOA (Short Circuit Safe Operating Area),CE

IC , ,. IGBT

,. IGBT

10μs. IGBT ,:

,

,

L

+VCCVCE

RG

CGC

CGE

IC

5 [5]

DBM 03 37

., V

,, 2.12

, ,

CE VCC . , VCE (

,), VCC . VCE ,

Miller- CGC , . .

, ,,

ICP ( )., ,

. .,

, ., tw . ,

, VCE VCE(pk) ( VCE = VCE(pk) - VCE L dIC /dt ).

SCSOA.

,( Q1).

, .,

Q1. L1 L2 ., “ ”

( 2.6) , VCE(on) VCC .

( . dVCE /dt) . , Miller- ( , , VCE ,

VCE) ( VCE = VCE(on)) .

(), .

, ,, ,

.

SCSOA ,, tw 10μs .

IGBT 38

+

Q1(ON) Q2(OFF)

Q3(OFF) Q4(ON)

CGE

RG

L2VCC

VCE

CGC

L1IC

2.12. 6

,

. ,

(avalanche) , EAV

25°C,

,. ,

,. ,

. ,.

, .

6 [5]

DBM 03 39

.,

, EAS . : , ,

.

, R JC , C=25

- , -. NPT-IGBT

PT-IGBT.

, PD

, TJmax ,

T °C :

Jmax CD

JC

T TP

R(2.4)

25°C, TC (2.4).

,. ,

.

,, .

, TJ

10°C,

, TSTG

IGBT 40

2.4.2.

, BVCES

-

,, .

VCES

. ,,

,

. BVCES

B . ,,

. ,BVCES .

, RBVCES

. , , -PNP ( 2.4)

15V, .IGBT

VCES .. 2.13

.

2.13.

Q1 D1

Q2 D2

L1

L2

Lopt

VL1

DBM 03 41

. ,

. je Q1 , Q2 . ( L1 L2 ). Lopt

Q2 , D1. VL1 , L1 ,

. VL1- Q1.

PNP ,, . IGBT-a.

, VGEth (th: threshold)

-. MOS

,,

IGBT- ,, -

,

. ,

- . –12mV/°C . : - .

25°C.

, VCE(on)

. 25°C,

( 125°C). ( ) VCE(on)

, - .

VCE(on) . VCE(on) ,

VCE(on) .NPT-IGBT ,PT-IGBT .

,,

PT-IGBT-a.

IGBT 42

, ICES

. - - .,

25°C,

, -.

.4.3.

2.5

( 125°C). .

, IGES

2

IGBT ,.

,, .

- - :

, Cies

ies GC GEC C C (2.5)

IGBT-a,;

).

, (

, .: ,

.

DBM 03 43

, Coes

,e ,

-- :

.

oes CE GCC C C (2 6)

,

.

.,.

), Cres

,

CGC 2.5

:

(Miller-

,. .

: ,

2.14

.

. ( latch-up, .) .

, VGEP

, ,- (

), . ( ).

, .

VGE QG “ ” , 2.14 . ,

.

, 2.14 .

. , VGE QG

VGE t ( QG=IG t). , 2.14

VGE , .

IGBT 44

VGE[ V ]t4(VCE1) t4(VCE2)

QG[ nC ]

VGEP

VG(th)

t1 t2 t3(VCE1) t3(VCE2)

VCE1 VCE2

VCE1< VCE2

VGG+

QG1 QG2 QG3 QGtot1

VGG -

QG - 0QGtot2

2.14. VGE , QG

:

0 t1 ( )

VGG+, (

, - . -

, VGEP , ,

2.6

t=0

), .

, VGEP , , . . t1 ,

QG1.

t1 t2 ( )

t1, -

( ). VGE .

. 2.12,

Q2 Q4. Q4, ( VGE

DBM 03 45

)., .

( , 2.14), (

2

.

, ).

( 2.6

), . t2 .

VGEP=Iopt / gfs . ,. , VCE

, 0 t2, CGC ( VCE).

CGC 0 t2, , ,

CG . t2 ,

, QGE .

t t3 ( y )

t2

, - (

, CGt2 t3 . , VCE ,

CGC , “ ”.

t2 t3 ( QG3 - QG2 ) ,CGC.

, QGC .

t3 t4 ( )

t3 ). VCE VCE = VCE(on) = RCE(on) IC .

VGE .,

- VGG+ . t3 ,

VGG+, VGEP .

, RCE(on) , VGE ,

, Qtot,. , Qtot,

, QG.,

( 2.14).

IGBT 46

, . . VGG- ( 2.14).

“ ”G- .

.

.4.4.

, ,,

( ,, ,

- 10% , 10% .

10% 90% .

ton .

Q

datasheet-a,,

-, ,

- . ,,

datasheet-a .

2

.

,.). ,

.

,.

, tdon

, tr

,

DBM 03 47

- 90% 90%

.

90% 10% .

toff .

. 2.15 .

,,

2.1

, tdoff

,

, tf

,

( ), Eon2

,

+VCC C

Lopt

2.15. ,

0 . .

- ,

IGBT 48

5% ,- 5% VCE

.

( ), Eon1

,.

2.16 .

P1 P2, Lopt.

, , D .

, ,

.- , -

.

(2.3)

.

+

P1 Lopt

P2VCC C D DZ

2.16. ,

DZ.

..

, Eoff

90% ,

, gfs

, 2.7 .

VCE , .

DBM 03 49

, VGEP ,

BT-a , .

,, R JC,

, R CH.

(junction)ase) ,

, TC , R ,

, R CH

(case)eatsink) ,

, TC

, ), ( , ,

, .).

.IGBT

,IG

2.4.5.

, R JC

(c.

,JC

, PD , :

JC J C JC DT T T R P (2.7)

(h

.

, TH , , PD , :

CH C H CH DT T T R P (2.8)

,(

IGBT 50

IGBT ,,

, ,.

.5. IGBT

, :

(self-commutated), .

2

,. ,

,

2.1

2.1. (self-commutated)

GTO BJT(Gate Turn-O tion Transistor) ff Thyristor) (Bipolar Junc

MCT(MOS Controlled Thyristor) Darlington Transistor

FCTh(Field Controlled Thyristor)

SITh(Static Induction Thyristor)

(M ldMOSFET

etal Oxide Semiconductor FieEffect Transistor)

MTO(MOS Turn-Off Thyristor) (Field Controlled Transistor)

FCT

EST(Emitter-Switched Thyristor)

SIT(Static Induction Transistor)

IGTT(Insulated Gate Turn-off Thyristor)

IGT(Insulated Gate Thyristor)

(Injection Enhanced (insulated) Gate IEGT

Transistor)

IGCT(Integrated Gate- utated Thyristor) (Insulated Gate Bipolar Transistor) Comm

IGBT

DBM 03 51

.

) IGCT- ,. IGCT- ,

.

IGCT. 100MW ( ,

30% , ,50MW- (STATCOM),

/ (Intertie), 4kA (

GTO-a 6μF- ).

, ,IGBT . IGBT

( IGBT 6.5kV 600 ), ,

IGBT MOSFET ,

Darlington- IGBT-a.

IGBT-a (BJT)IGBT-o , BJT-

.IGBT- , ,

( BJT-a) ().

,, ( 20 ,

). 200 ,â 10 ,

. , ,,

,. ,

.

, Darlington-a. Darlington-

- . , , VCE(on).

, .

,.

,.

, IGBT.(storage time)

IGBT 52

, IGBT, , (). ,

.,

450kHz. ,

IGB -a MOSFET-a,

NPT-IGBT-a, ,“ ”. , IGBT, ,

. IGBT-alatch-up , .

, IGBTDarlington-e .

MOSFET IGBT .o ,

IGBT-a MOSFET- . IGBT,MOSFET-a.

IGBT-a. IGBT-a ,, MOSFET,

- . ,MOSFET-a , ,

(2.1) . ,IGBT-a MOSFET- .

, IGBT- “ ”,

, , ..

,

. MOSFET, ,. MOSFET

IGBT. IGB -a, MOSFET. , ,

, , ., , ,

, MOSFET-a. ,, .

, IGBT. , MOSFET

300V, 200kHz. IGBT , ,

1000V, 20kHz. ,

, : ,, , , .

DBM 03 53

o 2.2 .

2.2.

BJT Darlington MOSFET IGBT

,

[ns] [μs] [μs]

~1 MHz ~100 kHz <100 kHz <100 kHz

,

,,

SOA

IGBT

). ,

.. ,

(

,,

,

.

IGBT 54

2.6. IGBT

IGBT :

( ,

(VCES),

, :

IPM (Intelligent Power Modules)

, IGBT-a

2.6.1.

IPM , IGBT-a , ( IPM ),

a a .IGBT-a,

. IPM(ASIPM=Application Specific IPM). Semikron-

o S

)

,

,( “chip-on-chip” “silicon-on-insulator”)

IGBT-a

IGBTHVDC

IPM

KiiPPACK (Semikron integrated intelligent Power PACK)., PCB ,

. SKiiPPACKAC , ,

DC ., , ,. SKiiPPACK (TTL

CMOS ). , ,SMPS-a, .

SKiiPPACK 2.17, .

DBM 03 55

2.6.2. IGBT

, IGB

.

600 . , ,“Infineon Technologies” ( Siemens-a

2.17. SKiiPPACK

6.5kV,

). NPT ,

.,

. ,NPT-IGBT-a, “ ”

NPT .. , ,

NPT , :, ,

., 3kV DC,

,. , DC

4.5kV ( ), 200nH

dI/dt 10k /μs . DC 4.5kV, ( repetitive turn-off )

, 4.5kV. , 10μs,

125°C. 2.18 2.19, ,, ,

IGBT 56

, ., .

2.18. 7

6.5kV, , HVDC

, 2.5kV- (

2.19. 7

). ,

7 [15]

DBM 03 57

3 4 ,.

8kV- IGBTABB ( 10kV- IGCT-a).

17.5mm x 17.5mm , 2.20 .

2.21 ,

)

, ABB-SPT-IGBT (Soft Punch Through) .

2.20. 8kV- 8

(N-Base

2.21. ,8kV- IGBT-a 8

8 [16]

IGBT 58

SPT ,

., , ,

. 2.22 ( )

2.23 125°C, .

9

,SPT ,

, 25°C . 125°C, 7.5kV, 5mA.

2.22. 25°C9

2.23. 125°C

9 [16]

DBM 03 59

,, 125°C 5.1V ,

50A. 2.24 2.25 , .

,L ,

.5kV.

2.26

” ” , S

5

2.24. TJ=125°C( VCC=4200V, IC=100A, VGE=15V, LS=6μH ) 10

2.25. TJ=125°C, dI/dt=70A/μs( VCC=4200V, IC=100A, VGE=15V, LS=6μH ) 10

,.

, , SOA(safe operating area), .

10 [16]

IGBT 60

.6.3. IGBT

IGBT ( ),

,

,. ,

tr

2.26. 8kV- IGBT-aTJ=125°C ( VCC=4500V, VGE=15V, LS=6μH ) 11

2

.

., , ,ench-gate ,

.2.27, .

“ ”, . .,

,. ,

30%. ,,

, latch-up ,, .

,.

11 [16]

DBM 03 61

2

N+ N+

N+ POLY PP

PN+

N-

SiO

2.27. Trench-gate IGBT-a ( TIGBT )

, IGBTitsubishi, CSTBT (Carrier Stored Trench-gate Bipolar Transistor)

. Mitsubishi CSTBT, 1200V 1400 . a 2.28

M

, ,.

CSTBT-a N (Carriertorage N layer) ,

,

CSTBT

sP (P base layer) N- (N- layer).

IGBT ,P+ .

. CSTBT-a, ,N , (P base layer)

(Carrier storage N layer)(N- layer). P+

(P base layer). ,N (Carrier storage N layer),

(N- layer).CSTBT-a

trench-gate .

IGBT 62

12

VCES=600V 50A . CSTBT-a

2.29.

-a 12

600V- 720V, .

2.28. CSTBT

2.29. CSTBT

12 [17]

DBM 03 63

CSTBT-a (

125°C 1.15V, 0.3–0.4V TIGBT-a, CSTBT

.

-a 13

CSTBT TIGBT.. trade-off

,MOS .

.6.4.

, -.

SiC, 600°C. SiC 10

, 10 . SiC-

100 ,

2.30

). ,CSTBT-a 25°C 1.22V,

2.30. CSTBT

O

2 SiC

1000 ,. 2001.

Schottky SiC-a,FET .

13 [17]

IGBT DBM 03 64

3. IGBT DBM 03

IGBTDBM 03 ,

. “ ”

), “ ” ( -AT ).

“ ”

( +AT

3.1. “ ”

3.1.1.

PWM79A, .” , . ,

1.3.1“

. Siliconix-Si9910. MOSFET

, ,, “ ”

.

. VCE

( ), CMOS . “ ”

high-side ( . “ ”) ,charge pump bootstrap .

. 1

VCE . , 2μs ( ) 2,

, VCE . VCE

,

, . 1 ( 8.3V 10.2V),

2, . 1 , 6.

2. (Schmidt) ,

DBM 03 65

. ,VCE . ( ),

( 3). ( , bootstrap ),

,

( ).

.1.2.

( V) .,

.”

PWM80A ( PWM80A

2 ().

( ). .

3 . 18V.

4VCE , . dVCE /dt . (DBM- ), .

5 ( ).

“shoot-through” ,

0.8V, 4 5 .

6 (ground) . 7 pull-down 8 pull-up

7 8 , ( )

( )..

3

“ ”

“), .

3 . , 19 PWM80A, OP302( ANALOG2 )

V.OP30 , 19 PWM80A -AT (

PWM80A -AT).“ ” 40106D ,

( 15V(-AT)).9, Z4,

T10. 23, PWM80A,0V(-AT). 23 T27 ( ANALOG2) ,

IGBT DBM 03 66

-6.2V(-AT), 25, PWM80A. T27. D82 D83, D84,

1, PWM79A, “ ” “ ”. “ ” .

“ ” , T27 “ ” .

“ ” , ,( . “ ” ) 1, PWM79A.

PWM79A“ ” . 1 (0V),

LM293D , 10V.

,C147, 4,

PWM79A ( ANALOG2). -12V ( )

10V.. DBM 03 5.2μs.

, 15V, T1. T1,

2, Si9910, 15V. T2, C4 C13.

“ ” VCE “ ”( 13, PWM79A),

, 5, Si9910. ,, VCE ,

. VCE 2.5V.

T1, T5, T2C2 C150 ( ANALOG2).

“ ” VCE “ ” ,VCE , 1, Si9910.

VCE ,8.3V 10.2V.

2, Si9910, ( 7.5V), 8, Si9910,

11V â. T3

T4 ( D4,,

PWM79A), 14, PWM79A,.

“ ” . , T7 T8( T6, PWM79A), Darlington

, T7 “ ” D4.

DBM 03 67

3.1.3.

“ ”PWM80A ( PWM80A ), .

23 . , OP30 , 19 PWM80A , R30, 15V.

( 0V). , , T9, T10

Z4, “ “ T27( ANALOG2), . D82,D83 D84, 15V (“ ” ) 1 ( 15V R1),

PWM79A ( PWM79A ). 1 (15V)

LM293D,10V. , (

C147 ), -12V.

, LM293D., 10V (

), 0V ( ). D1,

T1. , 2, Si9910,0V. 8,

Si9910, 1.3V, T3, T4 ( . D4,PWM79A). ( . )

T7 T6 ( . T8, PWM79A),Darlington ,

“ ” , .PWM79A,

PWM79A. Z2,R13, R14 R15,

LM293D. 10V. -12V,

2, Si9910, 0V, “ ” .

IGBT DBM 03 68

3.2. “ ”

.2.1.

“ ” ,

3

PWM78A, ., . -AT ., “ ” ,

“ ”V) .

,.

“ ”4, PWM80A ( PWM80A

Si9910 .

3.2.2.

(

1 ), 1, PWM78A. “ ”

, “ ” .PWM80A. ,

19, PWM80A ( . 19 15V),

40106D ( 10) 0V ( ).R33 40106D

3. ( 4) 15V ( ), 14,

PWM80A. (15V) 1, PWM78A,

C153 ( ANALOG2), 4, PWM78A.

,LM293D. 6.2V.

C153 ( ),

)

15V ( ).C153 0V 6.48V (6.2V +

, 5.2μs. 15V “ ”

, “ ” .

DBM 03 69

3.2.3.

4,PWM80A

“ ” 1. , 14, PWM80A (

1, PWM78A) ( 0V), C153 ( ANALOG2).

- ), 0V, D1

T1. “ ”

5.8V (6.2V

, “ ” .C153 D2,

..

DBM 03 DBM-PS 70

4. DBM 03 DBM-PS

DBM 03, DBM-PS .

.

( , , ).

4.1.1.

DBM 03

( 15V(-AT), -12V(-AT) -12V(+AT)), (

15V(0L) -15V(0L)).

,

4.1. DBM 03

DBM 03 :

IT

Incoherence Phase

DBM 03 71

15V(-AT), -12V(-AT) -12V(+AT)

PWM82B, ( PWM82B).

15V(-AT)

T3, OP10 ( ANALOG1

R35, R37, R38, Z5,LM293D. 13V(-AT),

-12V(-AT),T3 D8, T1 D4 D6.

), DBM-a

. , T1 ” ” 30, PWM82B 0V(-AT). 30, PWM82B,

PWM80A, ( ANALOG2,ANALOG3 ANALOG4, ). , 1N4148,

33, PWM80A. ,PWM80A. 0V(-AT)

33, PWM80A, T16.D3, D6, D9 14V(-AT), .

40106D13.5V(-AT),( 0V(-AT)). IGBT-a,

, 3. , 15V(-AT),

IGBT . -12V(-AT) -12V(+AT).

-12V(+AT)R2, R4, R5, Z1,

LM293D.-12V(+AT) -9V(+AT). ,

OP6 ( ANALOG1), D10 , 7.5V (

-12V(-AT) ). -12V(-AT), T1 T3,

IGBT.

-12V(-AT)R9, R10, R12, Z2,

LM293D.-12V(-AT) -9V(-AT).

-12V(-AT), T1 T3, a IGBT

.

DBM 03 DBM-PS 72

15V(0L) -15V(0L)

DBM-a, ( ANALOG1).

15V(0L)R117, R122, R123, Z24,

LM293. 15V(0L) 12V(0L).

-15V(0L), T31,OP32. OP32 30,

WM82BP , 0V(-AT). PWM80A, ( ) IGBT

DBM , . -15V(0L)

Z23,LM293.

T31,

( .

, IGBTPWRSPLY2

R114, R119, R120,

-15V(0L) -12(0L). -15V(0L),

OP32. , ,IGBT-a, DBM .

4.1.2.

, )..

( , )

R56, R57, R145, P3.

M293

, “ ” 375V. ,

375V, ,

0V(-AT).

.

L , 5V TL431.

P3,

Q31, D35 D36.

DBM 03 73

IGBT-a 16V, IGBT. , 158kHz- ,

±18V(-AT), C89, IGBT 360V. , D33 D34,

C88 C89, . charge-pump .C89 10V.

( . 360V),Q31. Q30 Q32

( D35 D36) Darlington .IGBT-a -9V(-AT)

C89, IGBT .

( 36kW),

,

. (,

). ( , ) ,

, ,. ,

0.564 ( 4.2.2).

PWM82B ( PWM82B, ).LM293D.

10V Z3, ( )

330k , 120k R21. ,, .

10.2V(-AT) ( 395V),

-12V(-AT), D2 .T2 ( D11), T1 ( D6) , T5 ( D13). T2,

,. T1, 30,

LED (power OK)

PWM82B, 0V(-AT).IGBT , 4.1.1 .

T5, OP9 ( ANALOG1),DBM

. , 395V,

IGBT .,

350V.

DBM 03 DBM-PS 74

4.1.3.

. DBM 03,

.

WM82BP .LM293D.

3,R31 R33 Z4

.6V(-AT). (

200V), -12V(-AT), ..

, LED (powerK), ( DBM-a)

R29, R31, R3

5)

330k , 120k R21. , ,.

5.18V(-AT) (

IGBO

. ,T6, OP11 (

ANALOG1). DBM-a.

, 245V.

DBM-a

DBM 03

Low Voltage Enable DBM 03 .Low Voltage Enable, OP8 (

.

ANALOG1) “ ” 11, PWM82B, 0V(-AT).

“ ” 0V(-AT),.

,42V LM293D. ,

1.35V(-AT) ,

DBM 03 75

( ) 330k , 120k R21.

R125R126) 17, PWM80A

1.08V ( 42V ),

-12V(-AT), . ..

, 62V.

4.1.4.

PWM80 ( ).IGBT ,

. ( V) .

,.

( V), (, 18

D87). ANALOG2( , .V

“ ” V,V ( “ ” ). ,

IGBT . ,

“ ” V,V ( “ ” ).

“ ” , . 19, PWM80A, 0V(-AT).

40106D 15V(-AT),R32 R33. “ ”

, 17, PWM80A,

3,

( “ ” ). , . 17 . T8 ,

“ ” R29Z3. C13 R32

15V ( ).

LM293D, 5.1V(-AT),Z9. 6.5V(-AT),

15V(-AT). 140174. 40174 6 D flip-flop- . flip-flop-

D1, D2, D3, D4, D5 D6,Q1, Q2, Q3, Q4, Q5 Q6. 16 (VDD) , 8

DBM 03 DBM-PS 76

(VSS) . Flip-flop- 9 (CK), 1 (CL).

, 15V(-AT).D flip-flop-a ( 13), flip-

flop- D13 R79. 13 12, LED L4

T18. T18 “ ” 37, ,

PWM80A, 0V(-AT), 35 37 ( ANALOG2).

37 0V(-AT), T16,D11. D11

14V(-AT), D3, D6 D9.40106D 13.5V(-AT),

( 0V(-AT)).IGBT-a ,

, 3. T18OP26 ( ANALOG2).

T21 LED L7,DBM-a.

DBM-a, R95. ,“ ” V, V (

“ ” ),. LED , PWM80A,

IGBT- ( .). , , “ ”

V , ( 17, PWM80A)T8, C13. ,

,. C13 ,

“ ” IGBT- . “ ” .

“ ” V, . 19, PWM80A, 15V(-AT).

14, PWM80A, 15V(-AT). “ ” , D87 (

18, PWM80A, ANALOG2) ( “ ” ).

, . D87 .D87

. T6, T7( PWM80A). R24

C8, 15V(-AT).C8

LM293D,5.1V(-AT). C8 6.5V(-AT),

15V(-AT). 11, 40174 ,

DBM 03 77

flip-flop-a, flip-flop- , 40147.flip-flop-a ( 10) ,

LED L3 T18. T18 “ ” 35, 37, PWM80A, 0V(-AT),

T16 D11. D11 14V(-AT), D3, D6 D9.

40106D 13.5V(-AT), ( 0V(-AT)).

IGBT-a ,, 3. T18

OP26 ( ANALOG2).T21 LED L7,

DBM-a.DBM-a, R95. ,

“ ” V, V ( “ ” ),

. LED , PWM80A,IGBT- ( .

). , , D87 (ANALOG2) , T6 (PWM80A). T7, C80V(-AT), .

( .0V(-AT)), .

,LM293D, “ ” 0V(-AT) (

D4 D5). ,. (

, IGB ,),

40174 LED .,, 40174 LED .

. ,, , U V, ,

( “ ” “ ” )

, . “ ”, “ ”

., IGBT.

,, .

DBM 03 DBM-PS 78

4.1.5.

..

PTC .DBM 03

PTC , ( .Drive Enable ).

LED OVT.,

. Drive Enable,,

).

, Moog.inc . 155°C ( F),

( ,

4.1.6.

DBM-a PWM82B (). DBM

. PTCtermo switch, DBM

. PTC( ) ,

.DBM . PTC- DBM

80°C, a

80°C ,BT-a 130°C . PTC ,

5. (

DBM . , ,,

IG

),

.5,

PTC-a, R47,Z2, R48.

Z7 4.5V. ,

( -AT),

DBM 03 79

0V(-AT). -12V(-AT) (

+15V(-AT)) , D7,-AT ( . 0V(-AT))

R53.

, . PTC 80°C, PTC-a

2V(-AT), 15V(-AT). 15V(-AT)

80°C ,

. ,M5

R48 ( -5.1V(-AT)), PTC-a (15V(-AT)) .

.,

-1

Z6 D7, 9.6V(-AT).

(-12V(-AT)) , 4.5V. ,

M5-12V(-AT), .

T1, D6, 4, R54.1 “ ” 30, PWM82B

0V(-AT), IGBT, 4.1.1 .

4, LED.

OP13 (

,

ANALOG1, ),DBM 03

. DBM-aLED ,

DRV OVT.DBM 03

. ANALOG1,, SA555 NTCJT1. , PTC .

, , ( 3)

:

NTC 103 130

1.442

fR R C

(4.1)

DBM-a 47, J11. DSP ,

. , DSP. ,

DBM 03 DBM-PS 80

, DSP.

DBM 03, , DBM 03

.

4.1.7. IT

. DSP,

( = RT CT), RT, CT .

.,

.. ,

IT .. IT

PTC ,

. ,, ,

.,

, .

,.

,,

DBM- PC.

( ), ., ,

,IT ( Drive Enable).

IT. ,IT PC .

[1]. ,.

, , ,FA [1].

DBM 03 81

4.1.8.

. ,DBM Drive Enable.

DSP.

,,

. , ,,

, . ( ), ( .

). , ,, ,

.,

,

,

. ( ,

).

4.1.9. Incoherence Phase

PWM81C (). Incoherence Phase

, ( , ) .

PWM81C. , 33004AD,

LM293D. U V ,W :

U V W 0i i i (4.2)

R36, R37 R38,6, .

M4 M5 .33004 D,

, ,LM293D, M1, M2 M3,

RIF+ RIF- . RIF+

DBM 03 DBM-PS 82

,RIF-

.DBM ( ANALOG1, )

TL 431 ( ANALOG1). RIF+,

( . )P4. RIF- RIF+

,33002 .

, U, .U

, . ImisU () RIF+ , “ ”

( R31 R32,LM293D) -15V(0L) .

U, . ImisU (

) RIF- . “ ” ( R34 R35,

LM293D) -15V(0L). ,D2, 32, PWM81C “ ”

-14.3V(0L). 32, PWM81C, 27, PWM86B, ANALOG2, .

27, PWM86B (-14.3V(0L) ) D5 ,R6 ( PWM86B), T8

“ ” 0V(0L), ,OP29 ( ANALOG2). OP29,

T28, 11, PWM80A, 0V(-AT). T17 (

PWM80A), D3, D6 D9 , 14V(-AT). IGBT

. , U, ,

, IGBT ( 4.1.1).

, , (). DBM 03

, ,Drive Enable.

,. Incoherence Phase

4024, PWM86B ().

4024 . 14 , 7 . 1 clock

DBM 03 83

,. 2

, . ,. 3 Q6 ,

64 1 , (

15V(0L)).,

RIF- RIF+ , 32, PWM81C ( 27, PWM86B) -14.3V(0L).

D3 ( PWM86B ), -0.7V(0L)( D5). 1 0V(0L). , , 1

. , IGBT, ,

(15V(0L)) (0V(0L)), 1.

. 32, PWM81C ( 27, PWM86B)15V(0L). T8 ( PWM86B),

OP 29, T28 (NALOG2). .

,, .

64 , 3 ( 15V(0L)),

T12, latch- ( clock). ,

17, PWM86B, 64 , Drive

Enable , IGBT. LED 15, PWM86B, Incoherence

Phase DBM .4024 Drive Enable., , T7 ( PWM86B), 2 ( ) (15V(0L)),

.Incoherence Phase

( ,).

DBM 03 DBM-PS 84

4.1.10.

. EV (Error Velocity) , , ( [ / ]),

. ,.

. ,, , Drive Enable

, .Reference Enable,

.

)

DBM-PS.

PWRSPLY1

.

( ,

4.2. DBM-PS

DBM-PS :

4.2.1. DBM-PS

(), . PTC ,

80°C . PTC ,72,

SC2.2.2 R72 R73,

R77, R83TC-a . PTC-a

, R77, R83 PTC-a

TL0

7V(0L)

P

DBM 03 85

2.47V(0L) (2.27V(0L) + ). -15V(0L),

, D21 . SC2,

DBM-PS

SPLY2

, Q23.Q23 , D17 “ “ 0V(0L),

( 5V(0L)). ,, 9, J2,

. ( .PTC) 80°C, PTC-a ,

R77, R83 PTC-a2.47V(0L), 15V(0L).

D21,SC2 . , LED ,

DBM-PS OVER TEMP,

(80°C), . .Q23, D17

4.7V(0L). , 5V(0L). , , 9, J2,

. DBM-aDBM 03 Drive Enable.

, ,DBM 03 .

4.2.2.

DBM 03( . )

, . a:

TBR

PWR .4077 4 EX-NILI ,

SC1.TBR.C89.

D56 .R126 2, 4077. 2, 4077

87, R88 R89. TBR

Q30 Q32

, , .R68, R69 R70.

TBRR

DBM 03 DBM-PS 86

D27 , .

1, 4077, . ,1,

, D42, D43,

1, 2, 4077, ,

, 15.7V(-AT). O

4077, , 2 . 3, 4077,

(0V(-AT)), 5, 4077, . 4

15V(-AT) Q35, SC1.

. ,TBR (

), . , ,, D27

. 1, 4077, .

EX-NILI ( 3) (15V(-AT)). (

C102) D43 5, 4077.EX-NILI ( 4) (

EX-NILI ). Q35, SC1, j. .

LED DBM-PS ,DBR FAULT. OP7 ,

Q58 ( PWRSPLY1). 4, J2, .

DBM-a DBM 03Drive Enable.

TBR. D35 D36, R135 R126,

2, 4077, 15.7V(-AT) ( D45). , 2, 4077 .

R104 C92,( 5V(-AT)) “ ”

LM293, 18V(-AT). ,

12, 4077. 11, ,, 5. ,

. 0.564 (

R104 16.4V(-AT),1.551 ), C92

5V(-AT). , , ( 36kW),

). TBR (

),. D27

0V(-AT). 1, 4077

DBM 03 87

0V(-AT), . , 2, 4077,, 1, , .

3 . 5, 4077,

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..

D25 ( ),Q20, 1, 4077, 15V(-AT) (

). 1, 2, 4077,. EX-NILI ( 3)

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, DBM-PS. , 2, 4077, ,

1 (,

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), ,. D27

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88

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5

,

P

5.1.1.

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LEM, 1:2000, peak 100 ( 50A),

, PWM90A. DBM 03U V, ,

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iW U Vi i (5.1)

, , 10A (25A peak)., .

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( PWM90A). (25 )

DBM 03 89

50mA ( ) ., PWM90A

( ). , 13 ,U (

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. DBM 03 () ,

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.,

- ,.

, DSPd-q a-b-c ,

a-b-c .D/A ,

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), :

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92

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0.000ms 20.00ms 40.00ms 60.00ms 80.00ms 100.0ms

10.00

7.500

5.000

2.500

0.000

-2.500

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uuref-0uuref-harmonikharmonik-0

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, DBM 03.

,

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1200Hz.

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cos

tgU

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,

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i KI(5.7)

KP KI 0 255. 5 –10 Nm

3-5 , 60Hz, 1.5%.

.

A/D D/A.

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DBM 03 97

6. DBM 03

DBM 03 . , ,.

.

.1. DBM 03

DBM 03 ,

. 6.1, 9. 6.1 6.1 .

6.1. 6.1

6

9

1 9 ( 1, 2, 3)2 6 3 3 3 5 2 2 4 4 1 1 5 8 I/O

6 7

7 LEDDRF

:;

,FA

8 LED Watch dogWTD

:;

9 RNC3 3 LED

10 LEDRNC2 2

11 LEDRNC1 1

12 3 LEDOVT3

DBM 03 98

13 LEDOVT2 2

14 1 LEDOVT1

15 TORQ

16 RESET

17 DRV OVT LED

18 LEDSHORT 1

19 SHORT 2 LED

20 SHORT 3 LED

21 J2 RS485

22 J3;

23 REF EN LED

24 DRIVE EN 3 LED

25 DRIVE EN 2 LED

26 DRIVE EN 1 LED

27 POWER AUX OKLED

28 PERSONALITYCARD

Setup

29 J130 GND31 L - 0VDC-HV 3032 L+ 0VDC+HV 30

DBM 03 99

2

3

4

5

6

7

8

9

10

11

12

1

13

14

15

16

21

22

28

30

31

32

29

27

26

25

24

23

20

19

18

17

6.1. DBM 03

DBM 03 100

6.2. DBM 03

DBM 03 . ,,

.,

( ). :

ANALOG1 , ,, .

,ANALOG1

6.2,

.

PWM82B ,,

, .. ,PWM82B.

LEM ., ,U V .

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,. ,

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,

.

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, PWM81C.

PWM86B ,PWM ,

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, PWM86B.

101

DBM

03

6.2

. D

BM

03

PW

M90

A

PW

M81

C

PW

M86

B

PW

M80

A

PW

M78

A

PW

M79

A

IGB

T

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M82

B

152L

013A

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AN

ALO

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DBM 03 102

80A ,,

., PWM80A

PWM

.

152L013A , “ ” .

, .

PWM78A , “ ” .

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PWM79A , “ ” .

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PWM79A.

IGBT . Six Pack IGBT . datasheetDBM 03 .

DBM 03 103

.inc).,

. IGBT

IPM . , DBM 03,

.

DBM 03, Vickers ( Moog

,,

.,

,

. DBM 03 ., DBM 04 , ,

IGBT

,

104

[1] “DBM 03 user’s manual”, Rev. 8, Vickers Electrics, Casella GE, Italy 1997.

[2] “Application manual”, Semikron, http://www.semikron.com/applica_help/

[3] “IGBT Characteristics”, International Rectifier, Application Note an-983, http://www.irf.com/technical-info/appnotes.htm.

[4] Jonathan Dodge, John Hess, “IGBT Tutorial”, Advanced Power Technology, Application Note apt0201, Rev. , Ju y 1, 2002. B lhttp://www.advancedpower.com/TechSupport/ApplicationNotes/default.aspx.

[5] “Using IGBT Modules”, Mitsubishi Power Modules MOS, Mitsubishi Electric, Sep. 1998, http://www.mitsubishichips.com/products/power/papers.html.

[6] K. S. Oh, ”IGBT Basics 1”, Fairchild Semiconductor, Application Note 9016, February 2001.

[7] K. j. Um, “IGBT Basics 2”, Fairchild Semiconductor, Application Note 9020, April 2002.

] Carl Blake, Chris Bull, “IGBT or MOSFET: Choose Wisely”, International Rectifier, 223 Kansas St., El Segundo California 90245.

] M. März, A. Knapp, M. Billmann, “High-speed 600V IGBT in NPT technology”, www.siemens.com

[8

[9.

0] Jonathan Dodge, “Latest Technology PT IGBTs vs. Power MOSFETs”, Advanced Power Technology, Application Note apt0302, Rev. A, April 4, 2003,http://www.advancedpower.com/TechSupport/ApplicationNotes/default.aspx

[1

.

1] Ralph McArthur, ”Making Use of Gate Charge Information in MOSFET and IGBT Data Sheets”, Advanced Power Technology, Application Note apt0103, October 31, 2001, http://www.advancedpower.com/TechSupport/ApplicationNotes/default.aspx

[1

.

2] Junji Yamada, et al., “New MEGA POWER DUAL™ IGBT Module with Advanced 1200V CSTBT Chip”, IEEE 2002.

3] “Application Characterization of IGBTs”, International Rectifier, Application Note an-990, http://www.irf.com/technical-info/appnotes.htm

[1

[1.

DBM 03 105

[14] “Use Gate Charge to Design the Gate Drive Circuit for Power MOSFETs and IGBTs”, International Rectifier, Application Note an-944, http://www.irf.com/technical-info/appnotes.htm.

5] Franz Auerbach, et al., ”6.5kV IGBT-Modules”, www.siemens.com[1

Switzerland Ltd, Semiconductors, Fabrikstrasse 3, CH-5600 Lenzburg, [16] M. Rahimo et al., “The status of IGBTs and IGCTs rated over 8kV”, ABB

Switzerland.

[17] “Mitsubishi Electric ADVANCE”, Power Electronics Edition, vol. 97 / March 2002.

[18] “The Do’s and Don’ts of Using MOS-Gated Transistors”, International Rectifier, Application Note an-936, http://www.irf.com/technical-info/appnotes.htm.

[19] Kenneth Dierberger, “Performance Comparison of the New Generation of IGBTs with MOSFETs at 150kHz”, Advanced Power Technology, ApplicationNote apt9805, Presented at Powersystems 98, Santa Clara http://www.advancedpower.com/TechSupport/ApplicationNotes/default.aspx.

0] E. I. Carroll, “Power Electronics for Very High Power Applications”, ABB

1] Jack Takesuye, Scott Deuty, “Introduction to Insulated Gate Bipolar

2] “

3] . . , . , “ ,

[24], 1997.

[25] d H ur , “ E C ice

6.

[2Semiconductors AG, Switzerland.

[2Transistors”, Motorola Semiconductor Application Note AN1541, 1995.

[2”, , , 2001.

[2, , , ”,

, ,1997.

, “ ”, ,

Muhamma arun Rashid Power lectronics, ircuits, Dev s, and Applications”, Prentice-Hall, Inc., Englewood Cliffs, New Jersey 07632, 1988.

[26] Werner Leonhard, “Control of Electrical Drives”, 2nd Completely Revised and Enlarged Edition, Springer-Verlag, Berlin, 199

[27] “”, , , 2001.

106

[28] , “ ”,, , , 2002.

DBM 03 107

1

1, datasheet IGBT 6MBI 30L-060, Fujilectric.E

108

DBM 03 109DBM 03 109

110110