HiP2471

23

AM01475v1_noZen

D(2, TAB)

G(1)

S(3)

FeaturesOrder code VDS RDS(on) max. ID

SCTW90N65G2V 650 V 24 mΩ 119 A

• Very high operating junction temperature capability (TJ = 200 °C)• Very fast and robust intrinsic body diode• Extremely low gate charge and input capacitances

Applications• Switching applications• Power supply for renewable energy systems• High frequency DC-DC converters

DescriptionThis silicon carbide Power MOSFET device has been developed using ST’sadvanced and innovative 2nd generation SiC MOSFET technology. The devicefeatures remarkably low on-resistance per unit area and very good switchingperformance. The variation of switching loss is almost independent of junctiontemperature.

Product status link

SCTW90N65G2V

Product summary

Order code SCTW90N65G2V

Marking SCT90N65G2V

Package HiP247

Packing Tube

Silicon carbide Power MOSFET 650 V, 119 A, 18 mΩ (typ., TJ = 25 °C) in an HiP247 package

SCTW90N65G2V

Datasheet

DS11832 - Rev 5 - July 2019For further information contact your local STMicroelectronics sales office.

www.st.com

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

VDS Drain-source voltage 650 V

VGSGate-source voltage -10 to 22

VGate-source voltage (recommended operating values) -5 to 18

IDDrain current (continuous) at TC = 25 °C 119

ADrain current (continuous) at TC = 100 °C 90

IDM (1) Drain current (pulsed) 220 A

PTOT Total power dissipation at TC = 25 °C 565 W

Tstg Storage temperature range-55 to 200

°C

TJ Operating junction temperature range °C

1. Pulse width is limited by safe operating area.

Table 2. Thermal data

Symbol Parameter Value Unit

Rthj-case Thermal resistance junction-case 0.31 °C/W

Rthj-amb Thermal resistance junction-ambient 40 °C/W

SCTW90N65G2VElectrical ratings

DS11832 - Rev 5 page 2/12

2 Electrical characteristics

(TC = 25 °C unless otherwise specified).

Table 3. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA 650 V

IDSS Zero gate voltage drain currentVDS = 650 V, VGS = 0 V 10

µAVDS = 650 V, VGS = 0 V, TJ = 150 °C 10

IGSS Gate-body leakage current VDS = 0 V, VGS = -10 to 22 V ±100 nA

VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 1.9 3.2 5.0 V

RDS(on) Static drain-source on-resistanceVGS = 18 V, ID = 50 A 18 24

mΩVGS = 18 V, ID = 50 A, TJ = 200 °C 30

Table 4. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Ciss Input capacitance

VDS = 400 V, f = 1 MHz, VGS = 0 V

- 3380 - pF

Coss Output capacitance - 294 - pF

Crss Reverse transfer capacitance - 49 - pF

Qg Total gate charge

VDD = 400 V, ID = 50 A, VGS = -5 to 18 V

- 157 - nC

Qgs Gate-source charge - 43 - nC

Qgd Gate-drain charge - 42 - nC

Rg Gate input resistance f = 1 MHz, ID = 0 A - 1 - Ω

Table 5. Switching energy (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

Eon Turn-on switching energy VGS = -5 to 18 V, VDD = 400 V, ID = 50 A,

RG = 2.2 Ω

- 130 -

µJEoff Turn-off switching energy - 210 -

Eon Turn-on switching energy VGS = -5 to 18 V, VDD = 400 V, ID = 50 A,

RG = 2.2 Ω, TC = 150 °C

- 135 -

Eoff Turn-off switching energy - 200 -

SCTW90N65G2VElectrical characteristics

DS11832 - Rev 5 page 3/12

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time

VDD = 400 V, ID = 50 A,

RG = 2.2 Ω, VGS = -5 V to 18 V

- 26 - ns

tf Fall time - 16 - ns

td(off) Turn-off delay time - 58 - ns

tr Rise time - 38 - ns

Table 7. Reverse SiC diode characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

VSD Forward on voltage IF = 30 A, VGS = 0 V - 2.5 - V

trr Reverse recovery time

IF = 50 A, di/dt = 4000 A/µs, VDD = 400 V

- 17 - ns

Qrr Reverse recovery charge - 308 - nC

IRRM Reverse recovery current - 30 - A

SCTW90N65G2VElectrical characteristics

DS11832 - Rev 5 page 4/12

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area

GADG110720191006SOA

10 2

10 1

10 0

10 -1 10 0 10 1 10 2 VDS (V)

tp =100µs

tp =10µs

tp =1ms

tp =10ms

IDM

single pulse

TC = 25 °CTJ ≤ 200°C

V(BR)DSS

Opera

tion i

n this

area

is lim

ited b

y RDS(

on)

RDS(on) max.

ID (A)

Figure 2. Maximum transient thermal impedanceGADG110720191010ZTH

10-1

10-2

10-3

10-4

10-6 10-5 10-4 10-3 10-2 10-1 tp (s)

ZthJ-C(°C/W)

0.01

0.10.050.02

duty=0.5

0.2

ton

T

duty = ton / TRthJ-C = 0.31 (°C/W)

Single pulse

Figure 3. Typical output characteristics (TJ = -50 °C)

GADG110720191014OCH_-50

120

100

80

60

40

20

00 1 2 3 4 5 6 VDS (V)

VGS =16V

VGS =10V

VGS = 8V

VGS = 18, 20V

VGS =12V

VGS =14V

ID (A)

Figure 4. Typical output characteristics (TJ = 25 °C)

GADG120720191341OCH_25

120

100

80

60

40

20

00 1 2 3 4 5 6 VDS (V)

VGS =16, 18, 20V

VGS =6V

VGS =8V

VGS =10V

VGS =12V

VGS =14V

ID (A)

Figure 5. Typical output characteristics (TJ = 200 °C)

GADG110720191015OCH_200

120

100

80

60

40

20

00 1 2 3 4 5 6

ID (A)

VDS (V)

VGS =6V

VGS =8VVGS =10V

VGS =12V

VGS =14,16,18, 20V

Figure 6. Typical transfer characteristics

GADG110720191016TCH

120

100

80

60

40

20

00 4 8 12 16

ID (A)

VGS (V)

VDS = 3 V

TJ = 200 °C TJ = 25 °C

SCTW90N65G2VElectrical characteristics (curves)

DS11832 - Rev 5 page 5/12

Figure 7. Typical capacitances

GADG110720191017CVR

10 3

10 2

10 1

10 -1 10 0 10 1 10 2

C (pF)

VDS (V)

CISS

CRSS

COSS

f = 1 MHz

Figure 8. Typical gate charge

GADG110720191018QVG

15

10

5

0

-50 30 60 90 120 150

VGS (V)

Qg (nC)

ID = 50 AVDD = 400 V

Figure 9. Maximum total power dissipation

GADG110720191023PDT

500

400

300

200

100

0-75 -25 25 75 125 175

PTOT (W)

TC (°C)

TJ =200 °C

Figure 10. Typical drain-source on-resistance

GADG110720191025RID

20

19

18

17

16

150 20 40 60 80 100 ID (A)

VGS = 18 V

RDS(on)(mΩ)

Figure 11. Normalized on-resistance vs temperature

GADG110720191026RON

1.8

1.6

1.4

1.2

0.8-75 -25 25 75 125 175

RDS(on) (norm.)

TJ (°C)

VGS = 18 V

1.0

Figure 12. Normalized gate threshold voltage vstemperature

GADG110720191027VTH

1.4

1.2

1.0

0.8

0.6

0.4-75 -25 25 75 125 175 TJ (°C)

VGS(th) (norm.)

ID = 250 µA

SCTW90N65G2VElectrical characteristics (curves)

DS11832 - Rev 5 page 6/12

Figure 13. Normalized breakdown voltage vs temperature

GADG110720191027BDV

1.06

1.04

1.02

1.00

0.98

0.96-75 -25 25 75 125 175

V(BR)DSS (norm.)

TJ (°C)

ID = 1 mA

Figure 14. Typical switching energy vs drain current

GADG110720191040SDC

600

500

400

300

200

100

020 30 40 50 60 70 ID (A)

Etot

Eoff

Eon

VDD = 400 V

RG = 2.2 ΩVGS = -5 to 18 V

(µJ)E

Figure 15. Typical switching energy vs temperature

GADG110720191041SLT

360

300

240

180

120

60

0-25 25 75 125 175 TC (°C)

(µJ)E

VDD = 400 V, ID = 50 A,VGS = -5 to 18 V, RG = 2.2 Ω

Etot

Eoff

Eon

Figure 16. Typical reverse conduction characteristics(TJ = -50 °C)

GADG110720191046RCC_-50

-20

-40

-60

-80

-100

-120

-140-6 -5 -4 -3 -2 -1 VDS (V)

VGS =15VVGS =10VVGS =5V

VGS =0V

VGS =-3, -5V

ID (A)

Figure 17. Typical reverse conduction characteristics(TJ = 25 °C)

GADG110720191043RCC_25

-20

-40

-60

-80

-100

-120

-140-6 -5 -4 -3 -2 -1

ID (A)

VDS (V)

VGS =15V

VGS =10V

VGS =-5, -3V

VGS =5VVGS =0V

Figure 18. Typical reverse conduction characteristics(TJ = 150 °C)

GADG110720191048RCC_150

-20

-40

-60

-80

-100

-120

-140-6 -5 -4 -3 -2 -1

ID (A)

VDS (V)

VGS =10V

VGS =15VVGS =5V

VGS =0V

VGS =-3, -5V

SCTW90N65G2VElectrical characteristics (curves)

DS11832 - Rev 5 page 7/12

3 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,depending on their level of environmental compliance. ECOPACK specifications, grade definitions and productstatus are available at: www.st.com. ECOPACK is an ST trademark.

3.1 HiP247 package information

Figure 19. HiP247 package outline

8581091_2

SCTW90N65G2VPackage information

DS11832 - Rev 5 page 8/12

Table 8. HiP247 package mechanical data

Dim.mm

Min. Typ. Max.

A 4.85 5.00 5.15

A1 2.20 2.60

A2 1.90 2.00 2.10

b 1.00 1.40

b1 2.00 2.40

b2 3.00 3.40

c 0.40 0.80

D 19.85 20.00 20.15

E 15.45 15.60 15.75

E3 1.45 1.65

e 5.30 5.45 5.60

L 14.20 14.80

L1 3.70 4.30

L2 18.30 18.50 18.70

P 3.55 3.65

Q 5.65 5.95

S 5.30 5.50 5.70

SCTW90N65G2VHiP247 package information

DS11832 - Rev 5 page 9/12

Revision history

Table 9. Document revision history

Date Revision Changes

15-Sep-2016 1 First release

29-Mar-2017 2

Updated Table 7: "Switching times" and Table 8: "Reverse diode characteristics".

Updated Section 2.1: "Electrical characteristics (curves)".

Minor text changes

25-Jun-2018 3

Updated cover page.

Updated Section 2 Electrical characteristics and Section 3 Package information.

Minor text changes.

24-Jan-2019 4

Modified Table 1. Absolute maximum ratings, Table 3. On/off states.

Modified Figure 1. Safe operating area and Figure 2. Normalized thermal impedance.

Minor text changes.

15-Jul-2019 5

Updated Section 1 Electrical ratings.

Updated Section 2 Electrical characteristics and Section 2.1 Electrical characteristics(curves).

Minor text changes.

SCTW90N65G2V

DS11832 - Rev 5 page 10/12

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

3 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8

3.1 HiP247™ package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

SCTW90N65G2VContents

DS11832 - Rev 5 page 11/12

IMPORTANT NOTICE – PLEASE READ CAREFULLY

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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.

© 2019 STMicroelectronics – All rights reserved

SCTW90N65G2V

DS11832 - Rev 5 page 12/12