ACEPACK™ 2

Features• ACEPACK™ 2 power module

– DBC Cu Al2O3 Cu• Sixpack topology

– 1200 V, 75 A IGBTs and diodes– Soft and fast recovery diode

• Integrated NTC

Applications• Inverters• Industrial• Motor drives

DescriptionThis power module is a sixpack topology in an ACEPACK™ 2 package with NTC,integrating the advanced trench gate field-stop technologies fromSTMicroelectronics. This new IGBT technology represents the best compromisebetween conduction and switching loss, to maximize the efficiency of any convertersystem up to 20 kHz.

Product status

A2P75S12M3

Product summary

Order code A2P75S12M3

Marking A2P75S12M3

Package ACEPACK™ 2

Leads type Solder contact pins

ACEPACK™ 2 sixpack topology, 1200 V, 75 A trench gate field-stop IGBT M series, soft diode and NTC

A2P75S12M3

Datasheet

DS11655 - Rev 6 - January 2019For further information contact your local STMicroelectronics sales office.

www.st.com

1 Electrical ratings

1.1 IGBTLimiting values at TJ = 25 °C, unless otherwise specified.

Table 1. Absolute maximum ratings of the IGBT

Symbol Parameter Value Unit

VCES Collector-emitter voltage (VGE = 0) 1200 V

IC Continuous collector current (TC = 100 °C) 75 A

ICP (1) Pulsed collector current (tp = 1 ms) 150 A

VGE Gate-emitter voltage ±20 V

PTOT Total power dissipation of each IGBT (TC = 25 °C, TJ = 175 °C) 454.5 W

TJMAX Maximum junction temperature 175 °C

TJop Operating junction temperature range under switching conditions -40 to 150 °C

1. Pulse width limited by maximum junction temperature.

Table 2. Electrical characteristics of the IGBT

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)CESCollector-emitterbreakdown voltage IC = 1 mA, VGE = 0 V 1200 V

VCE(sat)

(terminal)Collector-emittersaturation voltage

VGE = 15 V, IC= 75 A 1.95 2.3

VVGE = 15 V, IC = 75 A,TJ = 150 ˚C 2.3

VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 5 6 7 V

ICES Collector cut-off current VGE = 0 V, VCE = 1200 V 100 µA

IGESGate-emitter leakagecurrent VCE = 0 V, VGE = ± 20 V ± 500 nA

Cies Input capacitance

VCE = 25 V, f = 1 MHz, VGE = 0 V

4700 pF

Coes Output capacitance 350 pF

CresReverse transfercapacitance 190 pF

Qg Total gate charge VCC = 960 V, IC = 75 A, VGE = ±15 V 350 nC

td(on) Turn-on delay timeVCC = 600 V, IC = 75 A, RG = 10 Ω,

VGE = ±15 V, di/dt = 1900 A/µs

198 ns

tr Current rise time 32 ns

Eon (1) Turn-on switchingenergy 3.59 mJ

A2P75S12M3 Electrical ratings

DS11655 - Rev 6 page 2/13

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(off) Turn-off delay timeVCC = 600 V, IC = 75 A,

RG = 10 Ω, VGE = ±15 V,dv/dt = 6000 V/µs;

250 ns

tf Current fall time 159 ns

Eoff (2) Turn-off switchingenergy 5.13 mJ

td(on) Turn-on delay time VCC = 600 V, IC = 75 A,

RG = 10 Ω, VGE = ±15 V,

di/dt = 1718 A/µs, TJ = 150 °C

200 ns

tr Current rise time 35 ns

Eon (1) Turn-on switchingenergy 6.28 mJ

td(off) Turn-off delay time VCC = 600 V, IC = 75 A,

RG = 10 Ω, VGE = ±15 V,

dv/dt = 4900 V/µs, TJ = 150 °C

266 ns

tf Current fall time 251 ns

Eoff (2) Turn-off switchingenergy 7.7 mJ

tSCShort-circuit withstandtime

VCC ≤ 600 V, VGE ≤ 15 V,

TJstart ≤ 150 °C10 µs

RTHj-cThermal resistancejunction-to-case Each IGBT 0.30 0.33 °C/W

RTHc-hThermal resistancecase-to-heatsink Each IGBT, λgrease = 1 W/(m·°C) 0.60 °C/W

1. Including the reverse recovery of the diode.2. Including the tail of the collector current.

1.2 DiodeLimiting values at TJ = 25 °C, unless otherwise specified.

Table 3. Absolute maximum ratings of the diode

Symbol Parameter Value Unit

VRRM Repetitive peak reverse voltage 1200 Vrms

IF Continuous forward current (TC = 100 °C) 75 A

IFP (1) Pulsed forward current (tp = 1 ms) 150 A

TJMAX Maximum junction temperature 175 °C

TJop Operating junction temperature range under switching conditions -40 to 150 °C

1. Pulse width limited by maximum junction temperature.

A2P75S12M3Diode

DS11655 - Rev 6 page 3/13

Table 4. Electrical characteristics of the diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

VF

(terminal)Forward voltage

IF = 75 A - 2.95 4.1V

IF = 75 A, TJ = 150 °C - 2.3

trr Reverse recovery timeIF = 75 A, VR = 600 V,

VGE = ±15 V,

di/dt = 1900 A/μs

- 200 ns

Qrr Reverse recovery charge - 6.0 µC

Irrm Reverse recovery current - 78 A

Erec Reverse recovery energy - 2.2 mJ

trr Reverse recovery time IF = 75 A, VR = 600 V,

VGE = ±15 V,

di/dt = 1718 A/μs,

TJ = 150 °C

- 500 ns

Qrr Reverse recovery charge - 12.5 µC

Irrm Reverse recovery current - 90 A

Erec Reverse recovery energy - 5.2 mJ

RTHj-cThermal resistancejunction-to-case Each diode - 0.55 0.60 °C/W

RTHc-hThermal resistance case-to-heatsink Each diode, λgrease = 1 W/(m·°C) - 0.75 °C/W

1.3 NTC

Table 5. NTC temperature sensor, considered as stand-alone

Symbol Parameter Test conditions Min. Typ. Max. Unit

R25 Resistance T = 25 °C 5 kΩ

R100 Resistance T = 100 °C 493 Ω

ΔR/R Deviation of R100 -5 +5 %

B25/50 B-constant 3375 K

B25/80 B-constant 3411 K

T Operating temperature range -40 150 °C

Figure 1. NTC resistance vs temperature

GADG260720171142NTC

10 4

10 3

10 2 0 25 50 75 100 125

R (Ω)

TC (°C)

Figure 2. NTC resistance vs temperature, zoom

GADG260720171151NTCZ

800

700

600

500

400

30085 90 95 100 105 110

R (Ω)

TC (°C)

max

min

typ

A2P75S12M3NTC

DS11655 - Rev 6 page 4/13

1.4 Package

Table 6. ACEPACK™ 2 package

Symbol Parameter Min. Typ. Max. Unit

Visol Isolation voltage (AC voltage, t = 60 s) 2500 Vrms

Tstg Storage temperature -40 125 °C

CTI Comparative tracking index 200

Ls Stray inductance module P1 - EW loop 33.5 nH

Rs Module single lead resistance, terminal to chip 3.6 mΩ

A2P75S12M3Package

DS11655 - Rev 6 page 5/13

2 Electrical characteristics curves

Figure 3. IGBT output characteristics(VGE = 15 V, terminal)

IGBT191020171345OC25

125

100

75

50

25

00 1 2 3 4

IC (A)

VCE (V)

TJ = 25 °C

TJ = 150 °C

Figure 4. IGBT output characteristics(TJ = 150 °C, terminal)

IGBT191020171348OC25

125

100

75

50

25

00 1 2 3 4

IC (A)

VCE (V)

TJ = 150 °C 19 V

17 V 13 V

11 V

15 V 9 V

Figure 5. IGBT transfer characteristics(VCE = 15 V, terminal)

IGBT191020171350OC25

125

100

75

50

25

05 7 9 11

IC (A)

VGE (V)

TJ = 25 °C

TJ = 150 °C

Figure 6. IGBT collector current vs case temperature

GADG160120190936CCT

140

120

100

80

60

40

20

00 25 50 75 100 125 150

IC (A)

TC (°C)

VCC = 15 VTJ = 175 °C

A2P75S12M3Electrical characteristics curves

DS11655 - Rev 6 page 6/13

Figure 7. Switching energy vs gate resistance

IGBT191020171351SLG

14

12

10

8

6

4

2

00 10 20 30 40

E (mJ)

RG (Ω)

VCC = 600 V, IC = 75 A, VGE = ±15 V

EON (TJ =150°C)

EOFF (TJ =25°C)

EON (TJ =25°C)

EOFF (TJ =150°C)

Figure 8. Switching energy vs gate resistance

IGBT191020171351SLG

14

12

10

8

6

4

2

00 10 20 30 40

E (mJ)

RG (Ω)

VCC = 600 V, IC = 75 A, VGE = ±15 V

EON (TJ =150°C)

EOFF (TJ =25°C)

EON (TJ =25°C)

EOFF (TJ =150°C)

Figure 9. IGBT reverse biased safe operating area(RBSOA)

IGBT191020171358OC175

70

60

50

40

30

20

10

00 300 600 900

IC (A)

VCE (V)TJ = 125 °C, VGE = ±15 V, RG = 10 Ω

Figure 10. Diode forward characteristics (terminal)

IGBT191020171401DVF

125

100

75

50

25

00 1 2 3 4

IF (A)

VF (V)

TJ = 150 °C

TJ = 25 °C

Figure 11. Diode reverse recovery energy vs diode currentslope

IGBT191020171402RRE

5.5

4.5

3.5

2.5

1.5

0.5600 1000 1400 1800

Erec (mJ)

di/dt (A/µs)

VCE = 600 V, VGE = ±15 V, IF = 75 A

TJ = 150 °C

TJ = 25 °C

Figure 12. Diode reverse recovery energy vs forwardcurrent

IGBT191020171408RRE

6

5

4

3

2

1

010 30 50 70 90 110 130 150

Erec (mJ)

IF (A)

VCE = 600 V, VGE = ±15 V, RG = 10 Ω

TJ = 150 °C

TJ = 25 °C

A2P75S12M3Electrical characteristics curves

DS11655 - Rev 6 page 7/13

Figure 13. Diode reverse recovery energy vs gateresistance

IGBT191020171410RRE

7

6

5

4

3

2

1

00 10 20 30 40

Erec (mJ)

RG (Ω)

VCE = 600 V, VGE = ±15 V, IF = 75 A

TJ = 150 °C

TJ = 25 °C

Figure 14. IGBT thermal impedance

IGBT191020171416ZTH

10 -1

10 -2

10 -3 10 -2 10 -1 10 0

Zth(°C/W)

t (s)

Zth(typ.)JH

Zth(max.)JC

JC

i 1 2 3 4ri (˚C/W) 0.0306 0.1563 0.0897 0.0518τi (s) 0.0004 0.0112 0.0897 0.4563

JH

i 1 2 3 4ri (˚C/W) 0.0324 0.1591 0.4715 0.2345τi (s) 0.0004 0.0190 0.1303 0.4773

RC - Foster Thermal Network

RC - Foster Thermal Network

Figure 15. Inverter diode thermal impedance

IGBT191020171415MT

10 0

10 -1

10 -2

10 -3 10 -2 10 -1 10 0

Zth(°C/W)

t (s)

Zth(max.)JC

Zth(typ.)JH

JC

i 1 3 2 4ri (˚C/W) 0.0580 0.2865 0.1661 0.0857τi (s) 0.0007 0.0090 0.0585 0.3810

JH

i 1 2 3 4ri (˚C/W) 0.0718 0.2823 0.6107 0.3305τi (s) 0.0009 0.0152 0.1025 0.4110

RC - Foster Thermal Network

RC - Foster Thermal Network

A2P75S12M3Electrical characteristics curves

DS11655 - Rev 6 page 8/13

3 Test circuits

Figure 16. Test circuit for inductive load switching

A AC

E

G

B

RG+

-

G

C 3.3µF

1000µF

L=100 µH

VCC

E

D.U.T

B

AM01504v1

Figure 17. Gate charge test circuit

AM01505v1

k

k

k

k

k

k

Figure 18. Switching waveform

AM01506v1

90%

10%

90%

10%

VG

VCE

ICTd(on)

TonTr(Ion)

Td(off)

ToffTf

Tr(Voff)

Tcross

90%

10%

Figure 19. Diode reverse recovery waveform

25

A2P75S12M3Test circuits

DS11655 - Rev 6 page 9/13

4 Topology and pin description

Figure 20. Electrical topology and pin description

P

G1 G3 G5

G2 G4 G6

UV

W

EWE’W

EVE’V

EUE’U

T1

T2

Figure 21. Package top view with sixpack pinout

EV

EV

EV

EW

EW

E'W

EU

EU

EU

E'U

EW

E'V

G6

G4

G2 T1 T2

P P P P

G1

G3

G5W

W

W

V

V

V

U

U

U

A2P75S12M3Topology and pin description

DS11655 - Rev 6 page 10/13

5 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®

packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitionsand product status are available at: www.st.com. ECOPACK® is an ST trademark.

5.1 ACEPACK™ 2 SIXPACK solder pins package information

Figure 22. ACEPACK™ 2 sixpack solder pins package outline (dimensions are in mm)

56.7±0.3

51±0.15

22.7±0.3

16.4±0.2

4.5±0.1

12±

0.35

15.

5±0.

5

3.2 BSC

1.3±0.2

2.5±0.2

3.2

BSC

62.

8±0.

5

48±

0.3

53±

0.1

42.5

±0.

2

52.7 REF

37 R

EF

A A

Detail A 3.5 REF x 45°

2.3

REF

8.5

0.00

3.20

6.40

9.6012.80

16.00

19.20

22.40

25.60

28.80

32.00

0.00

3.20

19.2

0

22.4

0

25.6

0

28.8

0

32.0

0

44.8

0

48.0

0

EV

EV

EV

EW

EW

E'W

EU

EU

EU

E'U

EW

E'V

G6

G4

G2 T1 T2

P P P P

G1

G3

G5W

W

W

V

V

V

U

U

U

0.64±0.03

8569722_rev4

• The lead size includes the thickness of the lead plating material.• Dimensions do not include mold protrusion.• Package dimensions do not include any eventual metal burrs.

A2P75S12M3Package information

DS11655 - Rev 6 page 11/13

Revision history

Table 7. Document revision history

Date Revision Changes

19-May-2016 1 Initial release.

24-May-2016 2Updated Table 5: "Electrical characteristics of the diode".

Minor text changes.

01-Feb-2017 3Added Figure 19: "Package top view with pinout" and Section 2: "Electrical characteristics(curves)".

Minor text changes.

19-Oct-2017 4Updated Section 1: "Electrical ratings", Section 2: "Electrical characteristics curves", andSection 5: "Package information".

Minor text changes.

06-Mar-2018 5

Document status promoted from preliminary data to production data.

Removed maturity status indication from cover page.

Updated features in cover page, Section 1.1 IGBT, Section 1.2 Diode, Section 1.4 Package,Section 2 Electrical characteristics curves and Figure 22. ACEPACK™ 2 sixpack solder pinspackage outline (dimensions are in mm).

Minor text changes.

16-Jan-2019 6Added Figure 6.

Minor text changes.

A2P75S12M3

DS11655 - Rev 6 page 12/13

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A2P75S12M3

DS11655 - Rev 6 page 13/13