Data Sheet
15
Chip V F (V ) @ I F =50m A Ee(mW/cm 2 ) @I F =50m A Part Number Material Wavelength p Lens Colo r Typ. Max. Min. Typ. Viewin g Angle 2 1/2 BIR-BM1331 GaAlAs/GaAs 940 1.25 1.50 1.4 2.3 BIR-BM1331-A GaAlAs/GaAs 940 1.25 1.50 1.4 2.3 BIR-BO1331 GaAlAs/GaAlAs 850 1.50 1.80 1.8 4.8 BIR-BO0331 GaAlAs/GaAlAs 850 1.50 1.80 1.8 4.8 BIR-BN0331 GaAlAs/GaAlAs 880 Water clear 1.30 1.70 1.8 4.8 30 BIR-BM1731 GaAlAs/GaAs 940 1.25 1.50 1.4 2.3 BIR-BM1731-A GaAlAs/GaAs 940 1.25 1.50 1.4 2.3 BIR-BO0731 GaAlAs/GaAlAs 850 1.50 1.80 1.8 4.8 BIR-BO1731 GaAlAs/GaAlAs 850 1.50 1.80 1.8 4.8 BIR-BN0731 GaAlAs/GaAlAs 880 Blue Transparent 1.30 1.70 1.8 4.8 30 .americanbrightled.com AMERICAN BRIGHT www (909) 628-5050 FAX (909) 628-5006 © 2003 American B right Optoelectronics C orporation. S pecifications s ubject to change without notice. Infrared Emitting Diode End Look IR-03
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ChipV F (V ) @ IF =50m A
Ee(mW/cm 2)@ I F =50m APart Number
MaterialWavelength
p
Lens Color
Typ. Max. Min. Typ.
ViewingAngle2 1/2
BIR-BM1331 GaAlAs/GaAs 940 1.25 1.50 1.4 2.3
BIR-BM1331-A GaAlAs/GaAs 940 1.25 1.50 1.4 2.3
BIR-BO1331 GaAlAs/GaAlAs 850 1.50 1.80 1.8 4.8
BIR-BO0331 GaAlAs/GaAlAs 850 1.50 1.80 1.8 4.8
BIR-BN0331 GaAlAs/GaAlAs 880
Water clear
1.30 1.70 1.8 4.8
30
BIR-BM1731 GaAlAs/GaAs 940 1.25 1.50 1.4 2.3
BIR-BM1731-A GaAlAs/GaAs 940 1.25 1.50 1.4 2.3
BIR-BO0731 GaAlAs/GaAlAs 850 1.50 1.80 1.8 4.8
BIR-BO1731 GaAlAs/GaAlAs 850 1.50 1.80 1.8 4.8
BIR-BN0731 GaAlAs/GaAlAs 880
Blue
Transparent
1.30 1.70 1.8 4.8
30
. a m e r i c a n b r i g h t l e d . c o mAMERICAN BRIGHT w w w(909) 628-5050 FAX (909) 628-5006 © 2003 American B right Optoelectronics C orporation. S pecifications subject to change without notice.
Infrared Emitting Diode End Look
I R - 0 3
ChipV F (V)@ IF =50mA
Ee(mW/cm 2)@ I F =50m APart Number
MaterialWave lengt h
p
Lens Color
Typ. Max. Min. Typ.
ViewingAngl e2 1/2
BIR-BM13J4G GaAlAs/GaAs 940 1.25 1.50 3.00 5.80
BIR-BO13J4G GaAlAs/GaAlAs 850 1.50 1.80 3.20 6.10
BIR-BO03J4G GaAlAs/GaAlAs 850 1.50 1.80 3.20 6.10
BIR-BN03J4G GaAlAs/GaAlAs 880
Water Clear
1.30 1.70 3.20 6.10
20
BIR-BM17J4G GaAlAs/GaAs 940 1.25 1.50 3.00 5.80
BIR-BO17J4G GaAlAs/GaAlAs 850 1.50 1.80 3.20 6.10
BIR-BO07J4G GaAlAs/GaAlAs 850 1.50 1.80 3.20 6.10
BIR-BN07J4G GaAlAs/GaAlAs 880
Blue
Transparent
1.30 1.70 3.20 6.10
20
. a m e r i c a n b r i g h t l e d . c o mAMERICAN BRIGHT w w w(909) 628-5050 FAX (909) 628-5006 © 2003 American B right Optoelectronics C orporation. S pecifications subject to change without notice.
Infrared Emitting Diode End Look
I R - 0 4
ChipV F (V)@ IF =50m A
Ee(mW/cm 2)@ I F =50mAPart Number
MaterialWave length
p
Lens Color
Typ. Max. Min. Typ.
Vi ewingAngle2 1/2
BIR-BM13V4V-2 GaAlAs/GaAs 940 1.25 1.50 1.20 2.00
BIR-BO13V4V-2 GaAlAs/GaAlAs 850 1.50 1.80 1.30 2.90
BIR-BO03V4V-2 GaAlAs/GaAlAs 850 1.50 1.80 1.30 2.90
BIR-BN03V4V-2 GaAlAs/GaAlAs 880
Water Clear
1.30 1.70 1.30 2.90
60
BIR-BM13E4G-2 GaAlAs/GaAs 940 1.25 1.50 1.50 2.80
BIR-BO13E4G-2 GaAlAs/GaAlAs 850 1.50 1.80 2.10 3.70
BIR-BO03E4G-2 GaAlAs/GaAlAs 850 1.50 1.80 2.10 3.70
BIR-BN03E4G-2 GaAlAs/GaAlAs 880
Water Clear
1.30 1.70 2.10 3.70
40
. a m e r i c a n b r i g h t l e d . c o mAMERICAN BRIGHT w w w(909) 628-5050 FAX (909) 628-5006 © 2003 American B right Optoelectronics C orporation. S pecifications subject to change without notice.
Infrared Emitting Diode End Look
I R - 0 5
ChipV F (V ) @ IF =50m A
Ee(mW/cm 2)@I F =50mAPart Number
MaterialWave length
p
Lens Color
Typ. Max. Min. Typ.
Vi ewingAngle2 1/2
BIR-BM18V4V-2 GaAlAs/GaAs 940 1.25 1.50 1.20 2.00
BIR-BO18V4V-2 GaAlAs/GaAlAs 850 1.50 1.80 1.30 2.90
BIR-BO08V4V-2 GaAlAs/GaAlAs 850 1.50 1.80 1.30 2.90
BIR-BN08V4V-2 GaAlAs/GaAlAs 880
Blue
Transparent
1.30 1.70 1.30 2.90
60
BIR-BM18E4G-2 GaAlAs/GaAs 940 1.25 1.50 1.50 2.80
BIR-BO18E4G-2 GaAlAs/GaAlAs 850 1.50 1.80 2.10 3.70
BIR-BO08E4G-2 GaAlAs/GaAlAs 850 1.50 1.80 2.10 3.70
BIR-BN08E4G-2 GaAlAs/GaAlAs 880
Blue
Transparent
1.30 1.70 2.10 3.70
40
. a m e r i c a n b r i g h t l e d . c o mAMERICAN BRIGHT w w w(909) 628-5050 FAX (909) 628-5006 © 2003 American B right Optoelectronics C orporation. S pecifications subject to change without notice.
Infrared Emitting Diode End Look
I R - 0 6
ChipV F (V ) @ IF =50m A
Ee(mW/cm 2)@ I F =50m APart Number
MaterialWave length
p
Lens Color
Typ. Max. Min. Typ.
ViewingAngle2 1/2
EN D L OOK INFR AR ED
BIR-BM13K4Q GaAlAs/GaAs 940 Water Clear 1.25 1.50 1.20 2.00 50
SIDE LOOK INFR AR ED
BIR-NM23C1 GaAlAs/GaAs 940 1.25 1.50 0.40 0.65
BIR-NN03C1 GaAlAs/GaAlAs 880Water Clear
1.30 1.70 - 0.8040
BIR-NM23C2 GaAlAs/GaAs 940 1.25 1.50 0.40 0.65
BIR-NN03C2 GaAlAs/GaAlAs 880Water Clear
1.30 1.70 - 0.8050
. a m e r i c a n b r i g h t l e d . c o mAMERICAN BRIGHT w w w(909) 628-5050 FAX (909) 628-5006 © 2003 American B right Optoelectronics C orporation. S pecifications subject to change without notice.
Infrared Emitting Diode End & Side Look
I R - 0 7
ChipV F (V ) @ IF =50m A
Ee(mW/cm 2)@I F =50mAPart Number
MaterialWave length
p
Lens Color
Typ. Max. Min. Typ.
ViewingAngle2 1/2
GaAlAs/SHSuper Red
660 1.70 2.60 200(1*)BL-BS0N0301
GaAlAs/GaAlAs 880Water Clear
1.30 1.70 2.50 4.0030
GaAlAs/GaAs 940 1.25 1.50 0.40 0.85BIR-CM1J3301A-2 InGaAlP/Ultra
Orange635
Water Clear2.2 2.6 70(1*)
120
GaAlAs/GaAs 880 1.25 1.50 0.60 1.10
BIR-CN0F4301A-2 GaAlAs/GaAlAs/Sup
Super Red650
Water Clear2.0 2.6 350(1*)
120
1*:IV(mcd)@IF=20mA
. a m e r i c a n b r i g h t l e d . c o mAMERICAN BRIGHT w w w(909) 628-5050 FAX (909) 628-5006 © 2003 American B right Optoelectronics C orporation. S pecifications subject to change without notice.
Infrared Emitting & Visible Diode
I R - 0 8
Chip Electrical & Optical Characteristics
Light Current
Ic(on )(m A)
@V CE =5V
Ee=0.5mW /cm2
Saturation
Voltag e
VCE(sat )( V )
@I C =0.1 mA
Ee=0.5mW /cm2
Breakdown
Voltag e
V BR(CEO )(V )
@I C=0.1 mA
Ee=0 mW /cm2
Dark Current
ID(n A)
@V CE =10V
Ee=0mW /cm2
Part Nu mberMateri al
Wave length
p(nm )
Lens
Color
Typ. Max. Min. Max.
Vi ewing
Angl e
2 1/2
BPT-BP0331 940(400-1100) 0.35 0.50 30 100
BPT-BP1331 940(400-1100) 0.60 0.50 30 100
BPT-BP2331
Si-Phototransistor
(NPN)940(400-1100)
Water
Clear0.80 0.50 30 100
30
BPT-BP0931 940(750-1100) 0.35 0.50 30 100
BPT-BP1931 940(750-1100) 0.60 0.50 30 100
BPT-BP2931
Si-Phototransistor
(NPN)940(750-1100)
Black
0.80 0.50 30 100
30
BPT-BP0A31 940(820-1100) 0.35 0.50 30 100
BPT-BP1A31 940(820-1100) 0.60 0.50 30 100
BPT-BP2A31
Si-Phototransistor
(NPN)940(820-1100)
Black
0.80 0.50 30 100
30
. a m e r i c a n b r i g h t l e d . c o mAMERICAN BRIGHT w w w(909) 628-5050 FAX (909) 628-5006 © 2003 American Bright Optoelectronics Corporation. Specifications subject to change without notice.
Phototransistors End Look
I R - 0 9
Chip Electrical & Optical Characteristics
Light Current
Ic(on )(m A)
@V CE =5V
Ee=0.5mW /cm2
Saturation
Voltage
V CE (sat )( V )
@I C =0.1 mA
Ee=0.5mW /cm2
Breakdow n
Vo ltag e
V BR(CE O) (V )
@I C=0.1 mA
Ee=0 mW /cm2
Dark Current
ID(n A)
@ V CE =10V
Ee=0 mW /cm2
Part Nu mberMaterial
Wave length
p(nm)
Lens
Colo r
Typ. Max. Min. Max.
ViewingAngle
2 1/2
BPT-BP0314 940(400-1100) 0.65 0.50 30 100
BPT-BP1314 940(400-1100) 0.80 0.50 30 100
BPT-BP2314
Si-Phototransistor
(NPN)940(400-1100)
Water
Clear1.00 0.50 30 100
35
BPT-BP0334 940(400-1100) 0.45 0.50 30 100
BPT-BP1334 940(400-1100) 0.60 0.50 30 100
BPT-BP2334
Si-Phototransistor
(NPN)940(400-1100)
Water
Clear0.80 0.50 30 100
35
. a m e r i c a n b r i g h t l e d . c o mAMERICAN BRIGHT w w w(909) 628-5050 FAX (909) 628-5006 © 2003 American B right Optoelectronics C orporation. S pecifications subject to change without notice.
Phototransistors End Look
I R - 1 0
2 1
Chip Electrical & Optical Characteristics
Light Current
Ic(on) (mA)
@VCE =5V
Ee=0.5mW /cm2
Saturation
Voltage
V CE(sat)(V)
@I C =0.1 mA
Ee=0.5mW /cm2
Breakdown
Voltage VBR(C EO) (V)
@I C=0.1 mA
Ee=0 mW /cm2
Dark Current
ID(n A)
@V CE =10V
Ee=0 mW /cm2
Part NumberMaterial
Wave Length
p(nm)
Lens
Color
Typ. Max. Min. Max.
Viewing
Angl e
/2
BPT-BP0934 940(750-1100) 0.45 0.50 30 100
BPT-BP1934 940(750-1100) 0.60 0.50 30 100
BPT-BP2934
Si-Phototransistor
(NPN)940(750-1100)
Black
0.80 0.50 30 100
35
BPT-BP0A34 940(820-1100) 0.45 0.50 30 100
BPT-BP1A34 940(820-1100) 0.60 0.50 30 100
BPT-BP2A34
Si-Phototransistor
(NPN)940(820-1100)
Black
0.80 0.50 30 100
35
. a m e r i c a n b r i g h t l e d . c o mAMERICAN BRIGHT w w w(909) 628-5050 FAX (909) 628-5006 © 2003 American Bright Optoelectronics Corporation. Specifications subject to change without notice.
Phototransistors End Look
I R - 1 1
/22 1
END LOOK PHOTOTRANSISTOR
BPT-BP7341K Si-Phototransistor
(NPN)940(400-1100) Water
Clear0.65 0.50 30 100 35
BPT-RP4APK Si-Phototransistor
(NPN)940(820-1100) Black 0.40 0.50 30 100 -
BPT-RP4APK-H Si-Phototransistor
(NPN)940(820-1100) Black 0.40 0.50 30 100 -
. a m e r i c a n b r i g h t l e d . c o mAMERICAN BRIGHT w w w(909) 628-5050 FAX (909) 628-5006 © 2003 American Bright Optoelectronics Corporation. Specifications subject to change without notice.
Phototransistors End & Side Look
I R - 1 2
Chip Electrical & Optical Characteristics
Light Current
Ic(on) (mA)
@VCE =5V
Ee=0.5mW /cm2
Saturation
Voltage
VCE(sat) (V)
@IC =0.1 mA
Ee=0.5mW /cm2
Breakdown
Voltage VBR(CEO)(V)
@IC=0.1 mA
Ee=0 mW /cm2
Dark Current
ID(nA)
@VCE =10V
Ee=0 mW /cm2
Part NumberMaterial
Wave Length
p(nm)
Lens
Color
Typ. Max. Min. Max.
Viewing
Angle
SIDE LOOK PHOTOTRANSISTOR
Chip Electrical & Optical Characteristics
Light Current
Ic(on )(m A)
@V CE =5V
Ee=0.5mW /cm2
Saturation
Vo ltage
V CE(sat )( V )
@I C =0.1 mA
Ee=0.5mW /cm2
Breakdow n
Voltag e V BR(C EO ) (V)
@I C=0.1 mA
Ee=0 mW /cm2
Dark Current
ID(n A)
@V CE =10V
Ee=0 mW /cm2
Part Nu mberMateri al
Wave length
p(nm )
Lens
Colo r
Typ. Max. Min. Max.
Viewing
Angle
2 1/2
BPT-NP03C1 940(400-1100) 0.50 0.50 30 100
BPT-NP13C1 940(400-1100) 0.45 0.50 30 100
BPT-NP23C1
Si-Phototransistor
(NPN)
940(400-1100)
Water
Clear
0.45 0.50 30 100
-
BPT-NP03C2 940(400-1100) 0.65 0.50 30 100
BPT-NP13C2 940(400-1100) 0.45 0.50 30 100
BPT-NP23C2
Si-Phototransistor
(NPN)940(400-1100)
Water
Clear0.65 0.50 30 100
-
. a m e r i c a n b r i g h t l e d . c o mAMERICAN BRIGHT w w w(909) 628-5050 FAX (909) 628-5006 © 2003 American B right Optoelectronics C orporation. S pecifications subject to change without notice.
Phototransistors Side Look
I R - 1 3
Chip Electrical & Optical Characteristics
Light Current
IL (u A) @V R =5V
Ee=5 mW /cm2
Open Circui t
Vo ltag e
Voc(mV)@
Ee=0.5 mW /cm2
Reverse
Breakdown
Voltag e
V BR (V)@ IR =0.1 mA
Ee=0 mW /cm2
Reverse Dark
Current ID(n A)
@V R =10V
Ee=0 mW /cm2
Part Nu mberMateri al
Wave length
p(nm )
Lens
Colo r
Typ. Max. Min. Max.
ViewingAngle
2 1/2
BPD-BQA331 940(400-1100) 60 400 30 30
BPD-BQB331
Si-Photodiode
(PIN) 940(400-1100)
Water
Clear 70 400 30 3035
BPD-BQA334 940(400-1100) 60 400 30 30
BPD-BQB334 940(400-1100) 70 400 30 30
BPD-BQD334
Si-Photodiode
(PIN)940(400-1100)
Water
Clear80 400 30 30
30
BPD-BQA934 940(750-1100) 60 400 30 30
BPD-BQB934 940(750-1100) 70 400 30 30
BPD-BQD934
Si-Photodiode
(PIN)
940(750-1100)
Black
80 400 30 30
30
. a m e r i c a n b r i g h t l e d . c o mAMERICAN BRIGHT w w w(909) 628-5050 FAX (909) 628-5006 © 2003 American B right Optoelectronics C orporation. S pecifications subject to change without notice.
Photodiode End Look
I R - 1 4
END LOOK PHOTODIODE
BPD-BQAA34 940(820-1100) 60 400 30 30
BPD-BQBA34 940(820-1100) 70 400 30 30
BPD-BQDA34
Si-Photodiode(PIN)
940(820-1100)
Black
80 400 30 30
35
BPD-RQ0ADY-A Si-Photodiode(PIN)
940(820-1100) Black 120 350 30 30 140
Chip Electrical & Optical Characteristics
Light Current
IL (uA) @VR =5V
Ee=5 mW /cm2
Open Circuit
Voltage
Voc(mV)@
Ee=0.5 mW /cm2
Reverse
Breakdown
Voltage
VBR (V) @ IR =0.1 mA
Ee=0 mW /cm2
Reverse Dark
Current ID(n A)
@V R =10V
Ee=0 mW /cm2
Part NumberMaterial
Wave Length
λp(nm)
Lens
Color
Typ. Max. Min. Max.
ViewingAngle
2 1/2
. a m e r i c a n b r i g h t l e d . c o mAMERICAN BRIGHT w w w(909) 628-5050 FAX (909) 628-5006 © 2003 American Bright Optoelectronics Corporation. Specifications subject to change without notice.
Photodiode End & Side Look
I R - 1 5
SIDE LOOK PHOTODIODE
BPD-RQ03DV-1Si-Photodiode
(PIN)940(400-1100)
Water
Clear115 350 30 30 140
BPD-RQ09DV-1Si-Photodiode
(PIN)940(750-1100) Black 115 350 30 30 140
BPD-RQ09DY-ASi-Photodiode
(PIN)940(750-1100) Black 120 350 30 30 140
Chip Electrical & Optical Characteristics
Light Current
IL (u A) @V R =5V
Ee=5 mW /cm2
Open Circui t
Vo ltag e
Voc(mV)@
Ee=0.5 mW /cm2
Reverse
Breakdown
Voltag e
V BR (V)@ IR =0.1 mA
Ee=0 mW /cm2
Reverse Dark
Current ID(n A)
@V R =10V
Ee=0 mW /cm2
Part Nu mberMateri al
Wave length
p(nm )
Lens
Colo r
Typ. Max. Min. Max.
ViewingAngle
2 1/2
. a m e r i c a n b r i g h t l e d . c o mAMERICAN BRIGHT w w w(909) 628-5050 FAX (909) 628-5006 © 2003 American B right Optoelectronics C orporation. S pecifications subject to change without notice.
Photodiode Side Look
I R - 1 6
BPD-RQ0AIV1* Si-Photodiode(PIN)
940(820-1100) Black 120 350 30 30 140
Chip Electrical & Optical Characteristics
Light Current
IL (u A) @V R =5V
Ee=5 mW /cm2
Open Circui t
Vo ltag e
Voc(mV)@
Ee=0.5 mW /cm2
Reverse
Breakdown
Voltag e
V BR (V)@ IR =0.1 mA
Ee=0 mW /cm2
Reverse Dark
Current ID(n A)
@V R =10V
Ee=0 mW /cm2
Part Nu mberMateri al
Wave length
p(nm )
Lens
Colo r
Typ. Max. Min. Max.
ViewingAngle
2 1/2
. a m e r i c a n b r i g h t l e d . c o mAMERICAN BRIGHT w w w(909) 628-5050 FAX (909) 628-5006 © 2003 American Bright Optoelectronics Corporation. Specifications subject to change without notice.
Photodiode Side Look
I R - 1 7* Preliminary Drawings
