Cutting Power Consumption in HDD Electronics9 HDD Performance Impacting Power Consumption zHDD...
Transcript of Cutting Power Consumption in HDD Electronics9 HDD Performance Impacting Power Consumption zHDD...
Cutting Power Consumption in HDD Electronics
Duncan Furness
Senior Product Manager
2
Situation Overview
The industry continues to drive to lower power solutions• Driven by:
— Need for higher reliability— Extended battery life for mobile and handheld devices
• Performance requirements continue to increase
Being competitive requires IP directed at reducing power consumption• Process shrink is an enabler, but not the driver
• Innovations focused in two key pieces of IP— Read channels— Serial interface
3
Storage IC Technology Explained
VCM
Disk Platter
SpindleMotor
PreampPreampInterfaceController Read
Channel
Read/Write Head
HardDisk
Controller MotorController
MotorController
System on a Chip (SoC)
Memory
Host
ExternalMemory
4
Sample HDD Power Budget
Roughly ½ the budget is electronics• A large opportunity for improving power savings
SoC
Power
PA SpinUp
SteadyStateSpin
Seek
Electromechanical
And MechanicalElectronics
5
Reliability Driver
With higher data rates, increasing the power in a given form factor increases temperature
• Decreases inherent electronics reliability— Failure rate is exponential
with temp
• Results in a rich system failure pareto— head / disk failures in the
system– …
Semi Failure vs Junction Temp
Junction Temperature
Failu
re R
ate
Dec
reas
e
Power
(T)
λ~exp(ФKT)
Decreasing power (temperature) improves reliability
6
Extending Battery LifeMajor factor in handheld devices
• Translates into extended ‘live-time’
In order to minimize storage power the host utilizes a data buffer:
• Reduces on-time of HDD
With advent of video:• Battery ‘live-time’
expectation set from audio— Reduce power dramatically
and/or— Increase buffer size –costs
more
Must reduce storage power and operate at low battery voltage
2.7V
4.2V
Operation time
Full charged
0
CF 3.0V
A Consumer Electronicsproducts battery voltage characteristics example
DRAM Buffer
HDD
Native Speed
Application Speed
MP3or
MPEGFAST SLOW
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Process-Enabled Power Reduction
Reduction in operating power through process shrink:• Dynamic power shrinks with process
— Applies to digital logic
— Analog doesn’t scale
• Resulting mixed signal power reduction is less.
Dynamic Power = C V2 f
’01-’04 ’04-’06 ’06-’09
130 nm 90 nm 65 nm
• Additional wrinkle:—Leakage current increases with
process shrink
—With finer geometries, leakage becomes more significant.
Dynamic Power
Leakage Power
8
Handheld Device Challenge
Leakage power is an important aspect of battery-operated handheld devices
• Standby mode needs extremely low power
Requires higher threshold devices
• Thresholds required for 65 nm are high, requiring a high core voltage
Cannot take full advantage of:
• (Core Voltage)2 related power reduction
Drives the need for innovation in:
• Process
• Architecture
• Implementation
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HDD Performance Impacting Power Consumption
HDD transfer rates driven by density increases:• Every double of capacity results in:
~1.4X transfer rate
~1.4X number of servo fields
• Results in channel clocks scaling proportionally and processor speed requirements increasing.
Areal Density
1990 1992 1994 1996 1998 2000 2002 2004
60% CAGR10
0% C
AGR
Driving towards increased ECC capabilities• Results in more area/logic.
All of these increase power…
40%
CAGR
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Power Solutions –Read Channel
New 90 nanometer read channel designs offer 70 percent power reduction over 130 nm
The IP improvements are architectural in scope across all product segments
Power optimization must preserve signal-to-noise ratio performance
100%
30%
130nm 90nm
-55% Intellectual Property
-15% Process Shrink
Next Gen
Relative Power
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Serial Interface Adoption Impacting Power Consumption
Seeing adoption of High-speed SATA interface across product segments:• Used widely in desktop drives
— Desktop is converging on 3 Gb/s
• Transitioning to the mobile market — ~1 year behind desktop— Mobile will probably hold at 1.5 Gb/s for the near term due
to power sensitivity
• Enterprise will spearhead 6 Gb/s on SAS (~2008)
Most significant power consuming block is the Physical Layer Interface block (PHY)
Data rates are moving higher, so how can we maintain or reduce power budgets?
PowerPerformance
Area
Pin count
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Power Solutions -Serial Interface PHYRelative Power
100%
60%
-30% Intellectual Property
-10% Process Shrink
Next Gen
90nm130nm
New 90 nm serial PHY’s offering 40 percent power reduction over 130 nm design
Still able to produce performance improvements (6 Gb/s)
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Summary –Mixed Signal Power
Increasing Performance requirements, Reliability and Battery live-time push the need for power reduction.
Mixed signal analog power improvements are best addressed by design innovation.• Target architectural improvements to span product
segments
HDD silicon and system manufacturers will continue to be challenged to reduce or maintain power.• Be aligned with a silicon provider producing the necessary
innovation.
IDEMAAdvances in HDD Electronics
IDEMAAdvances in HDD Electronics
Dave MosleyVP – Emerging Products DevelopmentDave MosleyVP – Emerging Products Development
December, 2005December, 2005
Page 2© Seagate ConfidentialIDEMADecember 2005
1997 2001 2005 Beyond
DR
AM
Flash
Read Channel
Servo & Spindle Control
VoltageRegulators
Interface
uProcessor
Formatter
Interface Block
Buffer
Manager SR
AM
Glue
Logic
DRAM
Servo & Spindle
Control + Volt. Regs
Interface
uProcessor
Formatter
Interface Block
Buffer Manager
SRAM
ReadChannel
Glue
Logic
Servo & Spindle Control +
Voltage Regs
Interface
uProcessor
Formatter
Interface Block
Buffer M
anager
SRA
M
ReadChannel
Glue
Logic
DR
AM
A multitude of technologies A multitude of technologies have been used to enable have been used to enable dramatic reductions in the dramatic reductions in the
footprint and power of HDD footprint and power of HDD electronics!electronics!
DR
AM
Flash
Read Channel
Servo & Spindle Control
VoltageRegulators
Interface
Formatter
Glue
Logic
uProcessor
Interface Block
Buffer Manager
SRA
M
InterfaceInterface
Interface
Interface
275Components
150Components
75Components
35Components
Page 3© Seagate ConfidentialIDEMADecember 2005
HDD Electronics Advances• Silicon Integration
• ECC
• Packaging
• Buffer memory utilization
• Functional Integration
DR
AM
Flash
Read Channel
Servo & Spindle Control
VoltageRegulators
Interface
Formatter
Glue
Logic
uProcessor
Interface Block
Buffer Manager
SRA
M
DR
AM
Flash
Read Channel
Servo & Spindle Control
VoltageRegulators
Interface
uProcessor
Formatter
Interface Block
Buffer
Manager SR
AM
Glue
Logic
DRAM
Servo & Spindle
Control + Volt. Regs
InterfaceuProcessor
Formatter
Interface Block
Buffer Manager
SRAM
ReadChannel
Glue
Logic
Servo & Spindle Control +
Voltage Regs
Interface
uProcessor
Formatter
Interface Block
Buffer M
anager
SRA
M
ReadChannel
Glue
Logic
DR
AM
• Pull read channel into SoC
• Incorporate voltage regulators into spindle control device
• Eliminate flash by storing code on disc
• Combine controller, formatter & glue logic• Embed SRAM
• Embed DRAM in SoC• Reduce Power to allow SoC• Reduce Pads/connections
Interface
Interface
Interface
Interface
Page 4© Seagate ConfidentialIDEMADecember 2005
HDD Electronics Advances• Silicon Integration
• ECC
• Packaging
• Buffer memory utilization
• Functional Integration
• Faster DRAM• Code moved from Flash
to Disc. Executed out of DRAM
• Faster DRAM enabled smaller SRAM which was moved internal to SoC
• Future designs will have the DRAM buffer embedded in the SoC. This supports very high bandwidth and very low power.
Gains made with improved ECC schemes enable the use of smaller less powerful read channels
Du=2.0, 18dB 69/70 CCE
Du=2.0, 18dB 30/31 ECC
Du=2.0, 19dB 69/70 CCE
Du=2.0, 19dB 30/31 ECC
Du=2.0, 20dB 69/70 CCE
Du=2.0, 20dB 30/31 ECC
Du=2.0, 21dB 69/70 CCE
Du=2.0, 21dB 30/31 ECC
69/70 CCE vs 30/31 ECC,Du=2.0, 18-22dB, 90%Jitter, S=10, I=1
1.00E-08
1.00E-07
1.00E-06
1.00E-05
1.00E-04
1.00E-03
0 2 4 6 8 10 12 14 16 18 20 22 24 26
Correction capability, T
CB
ER (S
ecto
r per
bit)
Gain in error rates with
reverse ECC
DR
AM
Buf
fer
uPuP
uP
SRA
MD
RA
MB
uffe
rFl
ash
SRAM SRAM
DRAM
Page 5© Seagate ConfidentialIDEMADecember 2005
HDD Electronics Advances• Silicon Integration
• ECC
• Packaging
• Buffer memory utilization
• Functional Integration.
TQFP
COB
Flip Chip
Page 6© Seagate ConfidentialIDEMADecember 2005
Optimization at the system level is the key to the future!
Servo & Spindle Control +
Voltage Regs
Interface
uProcessor
Formatter
Interface Block
Buffer M
anager
SRA
M
ReadChannel
Glue
Logic
DR
AM
HDD optimization is reaching it’s minimum point
The storage device is the largest factor to BOM cost in many CE
devices
• Functional integration of system and storage device(s)
• Fully utilize HDD electronics to eliminate redundant system functions
• Take an HDD centric approach to optimize system BOM cost and reduce power usage
• Allows more flexibility for data
– Storage
– Usage and delivery
AND
The answer
is…..
Interface
Optimize the system around the
storage device!
PMP BOM Cost Break-down
ApplicationElectronics
20%
Battery2%
Mechanical5%
HDD54%
LCD19%
Page 7© Seagate ConfidentialIDEMADecember 2005
What’s next : Increased functionality in the HDD!
In a typical compressedaudio player the HDD is
spun up and transferring data less than 1% of the time.
An average personal video player has the
HDD active only 5 seconds out of every 11 minutes.
• In many systems the processing capability of the HDD electronics is predominantly idle
• Future system design will take advantage of this available capability; moving more functionality into the HDD and further minimizing the overall design
Downloadfrom hdisk
Power off
Music Playback
Personal Video Player Current
0
200
400
600
800
1000
1200
5 505 1005 1505 2005 2505 3005
Time (s)
Cur
rent
(mA
)
Optimized Semiconductor Optimized Semiconductor Process Choices for MixedProcess Choices for Mixed--Signal Signal
HDD DevicesHDD Devices
Deames DavisDeames DavisManager, Marketing/Manager, Marketing/
Business DevelopmentBusiness DevelopmentStorage Products GroupStorage Products Group
12/06/0512/06/05 Deames DavisDeames Davis
Myths about MixedMyths about Mixed--signal Processessignal Processes
••Device in next generation process is Device in next generation process is alwaysalways::–– Smaller die sizeSmaller die size–– Lower costLower cost–– Better power handlingBetter power handling–– Better performanceBetter performance
12/06/0512/06/05 Deames DavisDeames Davis
HDD Segment ConsiderationsHDD Segment Considerations
SegmentSegment CostCost Die SizeDie Size PowerPower PerformancePerformance
EnterpriseEnterprise 33 44 22 11
DesktopDesktop 11 44 33 22
NotebookNotebook 22 44 11 33
MicrodriveMicrodrive 33 11 22 44
12/06/0512/06/05 Deames DavisDeames Davis
Die Size ImpactDie Size Impact•• Minimum feature size shrinks with each Minimum feature size shrinks with each
successive process nodesuccessive process node•• Digital functions get full entitlement of shrinkDigital functions get full entitlement of shrink•• Analog functions are sized based on Analog functions are sized based on
voltage/current requirementsvoltage/current requirements–– Many analog functions need transistors larger than Many analog functions need transistors larger than
minimumminimum--featurefeature--sizesize–– Die area for given block may not change in successive Die area for given block may not change in successive
process nodesprocess nodes
•• Die size reduction is probable, but not Die size reduction is probable, but not guaranteedguaranteed
12/06/0512/06/05 Deames DavisDeames Davis
MixedMixed--Signal Process Roadmap Enables Signal Process Roadmap Enables Increased Integration, Performance, and Increased Integration, Performance, and FunctionalityFunctionality
LBC4 LBC6LBC3s LBC7
-22%-40%
-40%
Production ~1997
Production~1999
Production~2002
Production~2005
Ex: 12V Combo Motor Driver IC
1µm .72µm .45µm .35µm
Mixed-signal lithography follows in digital process footsteps Smaller chip plus increased integration
Preamp: Head Heaters, ADCs, Vertical Recording, etc.Servo: Dual Stage Actuation, Shock interface, Vreg FETs, etc.
12/06/0512/06/05 Deames DavisDeames Davis
Cost ImpactCost Impact
•• Wafer prices tend to be set by complexityWafer prices tend to be set by complexity–– Mask levels, process steps, etc.Mask levels, process steps, etc.–– Metallization technologyMetallization technology–– Manufacturing cycle time is also set by Manufacturing cycle time is also set by complexitiycomplexitiy
•• New processes may need new New processes may need new fabfab equipmentequipment–– Depreciation costDepreciation cost–– Highest cost during early productionHighest cost during early production
•• Volume/time will reduce cost, but device cost at Volume/time will reduce cost, but device cost at process transition is ~parityprocess transition is ~parity
12/06/0512/06/05 Deames DavisDeames Davis
TI Motor Driver Process RoadmapTI Motor Driver Process Roadmapmetal
system
DECMOS
core logic
HV
DMOS
analog
bipolar
R & C
2000 2001 2002 2003 2004
A12 A07 A07s
LBC7
LBC8LBC5
LBC6
LBC
LinEPIC
LBC4
LV
HV
1533C035 1218C027
1533A035
1833C05ASIC / CMOS
Bubble Positions indicate approx Process QUAL dates
2005
12/06/0512/06/05 Deames DavisDeames Davis
Power ImpactPower Impact
•• DissipationDissipation–– For like feature set and performance, device in next For like feature set and performance, device in next
generation process tends to use less powergeneration process tends to use less power
•• Power DensityPower Density–– Processes can be optimized to handle higher power Processes can be optimized to handle higher power
density (e.g. topdensity (e.g. top--layer copper)layer copper)
•• HandlingHandling–– Small die handles less power than larger die due to Small die handles less power than larger die due to
less physical contact with thermal path less physical contact with thermal path
12/06/0512/06/05 Deames DavisDeames Davis
ConclusionsConclusions••Device in next generation process is Device in next generation process is alwaysalways::
–– Smaller die sizeSmaller die size (Mostly, Yes)(Mostly, Yes)–– Lower costLower cost (Over time, Yes)(Over time, Yes)–– Better power handlingBetter power handling (Match power to die size)(Match power to die size)–– Better performanceBetter performance (Mostly, Yes)(Mostly, Yes)
••Process choice involves tradeProcess choice involves trade--offs and timing within offs and timing within process lifeprocess life--cyclecycle
•• It is important to have a “quiver” of processes to It is important to have a “quiver” of processes to provide the right process for the right productprovide the right process for the right product
–– Need to consider all aspects of performance (speed, Need to consider all aspects of performance (speed, power, voltage, current) before choosing process power, voltage, current) before choosing process