CURRICULUM VITAE

Moon Hyung Jang Institute of Physics and Applied Physics, Yonsei University

134 Sinchon-dong, Seodaemoon-Gu, Seoul 120-749, KOREA

Tel : 82-10-9822-7246, Fax : 82-2-392-1592

E-mail : ppicsari@yonsei.ac.kr

PERSONAL DATA

Full Name : Moon Hyung Jang

Nationality : Republic of Korea

Gender : Male

Date of Birth : Aug. 21, 1979

Place of Birth : Seoul, Korea

EDUCATION

2004-2010 Yonsei University Seoul, Korea

Ph.D. in Applied Physics

Advisor : Prof. Mann-Ho Cho

Dissertation : The physical and the device properties of GeSbTe and doped GeSbTe

2002-2004 Yonsei University Seoul, Korea

M.S. in Applied Physics

Advisor : Prof. Chung Nam Whang

Thesis : Luminescent Characteristics of Gd2O3:Eu3+ Films Grown on Si(111)

1998-2002 Yonsei University Seoul, Korea

B. S. in Physics

RESEARCH EXPERIENCE

Phase Change thin film / nanowires including GeSbTe and non-GeSbTe, Surface Analysis :

photoemission, ion scattering, high-resolution transmission electron microscopy and x-ray absorption

spectroscopy, Simulation : ab-initio calculation using Material Studio, high-resolution transmission

electron microscopy, and ion scattering. Extended x-ray absorption fine structure

2007-present • Study on the physical and the device properties of phase change thin film / nanowires

ion beam sputtering deposition system, photoemission, high-resolution transmission

electron microscopy, ab-initio calculation, extended x-ray absorption fine structure,

and I-V measurement.

2005-2006 • Designing and Constructing the nano-medium energy ion scattering (nano-MEIS) at

Korea Research Institute of Standard and Science (KRISS) in Korea. using ion

trajectory simulation code: SIMION and PBGUNS.

• High-dielectric thin film such as HfSiO film with MEIS and synchrotron technique.

2002-2004 • Study on the physical and the luminescence properties of rare-earth oxide phosphor

Gd2O3:Eu3+ film using ion beam cluster deposition system, x-ray diffraction,

photoluminescence, cathodoluminescence, VUV, and extended x-ray absorption fine

structure.

• High-dielectric thin film

• organic semiconductor

HONORS AND AWARDS

2009 Korean Vacuum Society 2009 Summer Meeting Presentation Award

2008 Korean Physical Society 2008 Spring Meeting Presentation Award

TEACHING EXPERIENCES

2006 Yonsei University Seoul, Korea

Teaching Assistant of “General Physics and Lab.” for undergraduate students

2005 Yonsei University Seoul, Korea

Teaching Assistant of “General Physics and Lab.” for undergraduate students

2004 Yonsei University Seoul, Korea

Teaching Assistant of “Intermediate Physics Experiment” for undergraduate students

Vice Manager of Teaching Assistants, Institute of Physics and Applied Physics

2003 Yonsei University Seoul, Korea

Teaching Assistant of “Intermediate Physics Experiment” for undergraduate students

Teaching Assistant of “General Physics and Lab.” for undergraduate students

Teaching Assistant of “Optics” for undergraduate and graduate students

2002 Yonsei University Seoul, Korea

Teaching Assistant of “General Physics and Lab.” for undergraduate students

PUBLICATIONS

In preparation

1 Moon Hyung Jang, Seung Jong Park, Dong Hyeok Lim, Sung Jin Park, Mann-Ho Cho,

Dae-Hong Ko, and Hyun Chul Sohn

“Core-level photoemission study on GeSbTe films”

2 Moon Hyung Jang, Seung Jong Park, Dong Hyeok Lim, Sung Jin Park, Gap Soo Chang,

Mann-Ho Cho, Dae-Hong Ko, and Hyun Chul Sohn

“The role of Ge to the resistance change in GeSbTe films” (using x-ray emission spectroscopy)

3 Moon Hyung Jang, Seung Jong Park, Dong Hyeok Lim, Sung Jin Park, Mann-Ho Cho,

Dae-Hong Ko, and Hyun Chul Sohn

“The physical properties of BN incorporated GeSbTe films”

Submitted

1 Moon Hyung Jang, Seung Jong Park, Dong Hyeok Lim, Sung Jin Park, Mann-Ho Cho,

Dae-Hong Ko, and Hyun Chul Sohn

“The observation of martensite transformation in GeSbTe films by transmission electron microscopy”,

submitted to Electrochem. Solid-State Lett.

2 Moon Hyung Jang, Yoon Ki Choi, Kwun Bum Chung, Hyeongtag Jeon, and Mann–Ho Cho

“Luminescent mechanism of Eu3+-doped epitaxial Gd2O3 films grown on a Si (111) substrate using an

effusion cell”, submitted to Curr. Appl. Phys.

3 Seung Jong Park , Moon Hyung Jang , Sung Jin Park , Jong Ki Kim , Dae-Hong Ko , Hyun

Chul Sohn , Sang-Ok Kim

“Instability in phase transition of Ge-Sb films”, submitted to Electrochem. Solid-State Lett.

4 Moon Hyung Jang, Seung Jong Park, Dong Hyeok Lim, Sung Jin Park, Mann-Ho Cho,

Dae-Hong Ko, and Seong Jin Cho

“The effect of oxygen-incorporation in GeSbTe films on phase change speed”, submitted to Appl. Phys.

Lett.

Published

1 Moon Hyung Jang, Seung Jong Park, Dong Hyeok Lim, Sung Jin Park, Mann-Ho Cho,

Seong-Jin Cho, Yoon Ho Cho, and Jong-Heun Lee

“Effects of oxygen incorporation in GeSbTe films on electrical properties and thermal stability”, Appl.

Phys. Lett. 96, 092108 (2010).

2 Moon Hyung Jang, Seung Jong Park, Dong Hyeok Lim, Sung Jin Park, Mann-Ho Cho,

Dae-Hong Ko, Min Young Heo, Hyun Chul Sohn, and Sang-Ok Kim

“Effect of In incorporated into SbTe on phase change characteristics resulting from changes in

electronic structure”, Appl. Phys. Lett. 96, 052112 (2010)

3 M. H. Jang, S. J. Park, D. H. Lim, M.-H. Cho, K. H. Do, D.-H. Ko, and H. C. Sohn,

“Phase change behavior in oxygen-incorporated Ge2Sb2Te5”, Appl. Phys. Lett. 95, 012102 (2009)

4 M. H. Jang, S. J. Park, D. H. Lim, M.-H. Cho, Y. K. Kim, H.-J. Yi, and H. S. Kim,

“Structural Stability and Phase-Change Characteristics of Ge2Sb2Te5/SiO2 Nano-Multilayered Films”,

Electrochem. Solid-State Lett., 12, H151 (2009).

5 Youngkuk Kim, M. H. Jang, K. Jeong, M.-H. Cho, K. H. Do, D.-H. Ko, H. C. Sohn, and Min

Gyu Kim,

“Investigation of phase transition of Ge2Sb2Te5 and N-incorporated Ge2Sb2Te5 films using x-ray

absorption spectroscopy”, Appl. Phys. Lett. 92, 061910 (2008).

6 C. J. Yim, D.-H. Ko, M. H. Jang, K. B. Chung, M.-H. Cho, and H. T. Jeon,

“Change in band alignment of HfO2 films with annealing treatments”, Appl. Phys. Lett. 92,

012922 (2008).

7 K. B. Chung, Y. K. Choi, M. H. Jang, M. Noh, C. N. Whang, H. K. Jang, E. J. Jung, and D.-H.

Ko

“Formation of GdSi2 film on Si(111) via phase transformation assisted by interfacial SiO2 layer”, J. Vac.

Sci. Technol. B 23, 153 (2005).

8 D. S. Park, S. J. Kang, H. J. Kim, M. H. Jang, M. Noh, K.-H. Yoo, C. N. Whang, Y. S. Lee, and

M. H. Lee

“Characteristics of perylene-based organic thin-film transistor with octadecyltrichlorosilane monolayer”,

J. Vac. Sci. Technol. B 23, 926 (2005).

9 M. H. Jang, J. M. Choi, C. N. Whang, H. K. Jang, B. G. Yu,

“Annealing Effects of Indium Tin Oxide films grown on glass by radio frequency magnetron sputtering

technique”, J. Kor Vac. Soc. 14, 159 (2005)

10 S. J. Kang, K. B. Chung, D. S. Park, H. J. Kim, Y. K. Choi, M. H. Jang, M. Noh and C. N.

Whang

“Fabrication and characterization of the pentacene thin film transistor with a Gd2O3 gate insulator”,

Synthetic Met. 146, 351 (2004).

11 K. B. Chung, Y. K. Choi, M. H. Jang, M. Noh, and C. N. Whang,

“Phase selective synthesis of gadolinium silicide films on Si(111) using an interfacial SiO2 layer”, J.

Appl. Phys. 94, 212 (2003).

12 M. H. Jang, Y.K. Choi, K. B. Chung, S. W. Hwangbo, H. K. Jang, M. Noh, M. H. Cho, K. S.

Sohn, C. H. Kim and C. N. Whang,

“Optical properties of epitaxial Gd2O3: Eu3+ luminescent thin films depending on crystallinity”, J. Kor.

Vac. Soc. 12, 275 (2003)

PATENTS

Domestic application

1. Mann-Ho Cho, Dae Woon Moon, Moon Hyung Jang

“System for analysis of thin film using the scatteringof focused ion beam”,

Application No.: 10-2005-0078386 (2005.08.25)

Registration No.: 10-0687074-0000 (2007.02.20)

2. Mann-Ho Cho, Moon Hyung Jang, Yong Suk Noh

“Spectrometer for high energy charged particle”,

Application No.: 10-2006-0129941 (2006.12.19)

Registration No.: 10-0833647-0000 (2008.05.23)

3. Mann-Ho Cho, Moon Hyung Jang, Seoung Jong Park, Sung Jin Park

“Phase change memory device and method for manufacturing the same”

Application No.: 10-2009-0034509 (2009.04.21)

4. Mann-Ho Cho, Moon Hyung Jang, Seoung Jong Park, Sung Jin Park, Kwang Sik Jeong

“Phase-change Memory Elements and Fabrication Method Thereof”

Application No.: 10-2010-0013724

CONFERENCE

Domestic conference

1 Moon Hyung Jang , Seung Jong Park, Dong Hyeok Lim , Sung Jin Park1, Mann-Ho Cho,

Yoon Ho Cho, and Jong-Heun Lee

“Electrical properties and thermal stability of oxygen incorporated GeSbTe films”

2010 Korean Vacuum Society Winter meeting (Hoengseong, Korea 2010)

2 M. H. Jang, S. J. Park, S. J. Park, M.-H. Cho, D.-H. Ko, and H. C. Sohn

“Transmission electron microscopy investigation of tetragonal transformation in GeSbTe”

2009 Korean Physical Society Fall meeting (Changwon, Korea 2009)

3 M. H. Jang, S. J. Park, D. H. Lim, S. J. Park, M.-H. Cho, K. H. Do, D.-H. Ko, H. C. Sohn, and

Y. Yi

“Phase separation of In doped SbTe films”

2009 Korean Vacuum Society Summer meeting (Yeosu, Korea 2009)

4 M. H. Jang, S. J. Park, S. J. Park, M.-H. Cho, D.-H. Ko, and H. C. Sohn

”The phase change properties for oxygen incorporated Ge2Sb2Te5”

2009 Korean Physical Society Spring meeting (Daejeon, Korea 2009)

5 M. H. Jang, S. J. Park, and M.-H. Cho

“Phase transition characteristics of Ge2Sb2Te5 and N-incorporated Ge2Sb2Te5”

20th Korea Synchrotron Radiation User‘s Workshop (Pohang, Korea 2008)

6 S. J. Park, M. H. Jang, and M.-H. Cho

“Investigation on the electric states and the structural properties of the GeSb films”

2008 Korean Physical Society Fall meeting (Gwangju, Korea 2008)

7 M. H. Jang, Y. Kim, S. J. Park, D. H. Lim, and M.-H. Cho

“Thickness dependence of Ge2Sb2Te5/SiO2 multilayered films”

2008 Korean Physical Society Spring meeting (Daejeon, Korea 2008)

8 M. H. Jang, S. J. Park, and M.-H. Cho

“NEXAFS study on Ge2Sb2Te5 films”

2008 Korean Vacuum Society Winter meeting (Yongin, Korea 2008)

9 M. H. Jang, S. J. Park, Y. Yi, M.-H. Cho, C. N. Whang, Y. H. Cho, and J. H. Lee

“The electronic states and structural properties of oxygen doped Ge2Sb2Te5”

2007 Korean Physical Society Fall meeting (Daejeon, Korea 2007)

10 M. H. Jang, Y. Kim, S. J. Park, M.-H. Cho, C. N. Whang, and Y. Yi

“Changes in the electronic structures and optical band gap of Ge2Sb2Te5 and N-doped Ge2Sb2Te5 during

phase transition”

2007 Korean Vacuum Society Summer meeting (Jeju, Korea 2007)

11 S. J. Kang, D. S. Park, H. J. Kim, K. B. Chung, M. H. Jang, M. Noh and C. N. Whang

“Characteristics of the pentacene thin film transistor with a Gd2O3 gate insulator”

2004 Korean Physical Society Summer meeting (Suwon, Korea 2004)

12 M. H. Jang, Y. K. Choi, K. B. Chung, S. W. Whangbo, H. K. Jang, M. Noh, M.-H. Cho, K. S.

Sohn, C. H. Kim and C. N. Whang

“Luminescence properties of Gd2O3: Eu3+ thin films depending on crystallinity”

2003 Korean Vacuum Society Spring meeting (Chungju, Korea 2003)

International conferences

1 M. H. Jang, S. J. Park, D. H. Lim, and M.-H. Cho

“Phase change properties of In-doped Sb2Te3”

2008 European Materials Research Society Spring Meeting (Strasbourg, France 2008)

2 S. J. Park, M. H. Jang, D. H. Lim, and M.-H. Cho

“XANES study on Ge2Sb2Te5 films”

European Materials Research Society Spring Meeting (Strasbourg, France 2008)

3 Youngkuk Kim, Uk Hwang, M. H. Jang, M. -H. Cho and H. M. Park

“Changes in the chemical states and optical bandgap of Ge2Sb2Te5 and N-doped Ge2Sb2Te5 during

Phase Transition”

2007 Material Research Society Spring Meeting, (San Francisco, CA, USA 2007)

4 S. J. Kang, D. S. Park, H. J. Kim, K. B. Chung, Y. K. Choi, M. H. Jang, M. Noh, C. N. Whang

“Characteristics of the pentacene thin film transistor with a high-k Gd2O3 gate insulator”

2004 European Materials Research Society Fall Meeting (Warsaw, Poland 2004)

INVITED PRESENTATIONS

1 M. H. Jang, S. J. Park, S. J. Park, K. S. Jeong, M. -H. Cho

“Investigation on the physical properties of GeSbTe, doped GeSbTe and InSbTe”

Seminar at Semiconductor Research Laboratory in Yonsei University (Seoul, Korea 2010)

SKILLS

Phase Change Nanowire growth and Characterization

EDX mapping of Ge2Sb2Te5 nanowires using HRTEM equipment (unpublished)

Materials Characterization

• Atomic level characterization using HRTEM and simulation code

Electrochem. Solid-State Lett., 12, H151 (2009)

• Interfacial characteristics, strain measurement and depth profiling using MEIS

Appl. Phys. Lett. 92, 012922 (2008)

• Measurement of stoichiometry and binding state using XPS

Appl. Phys. Lett. 95, 012102 (2009)

• Characteristics of surface morphology and measurement of surface roughness using AFM

Appl. Phys. Lett. 95, 012102 (2009)

• Identify the phase separation in solid using Raman spectroscopy.

Appl. Phys. Lett. 95, 012102 (2009)

• Surface and interfacial characteristics of oxide on Si using photoemission at synchrotron.

• Measurement and fitting the local fine structure using EXAFS.

Appl. Phys. Lett. 95, 012102 (2009)

• Ab-initio calculation and optimization using Material Studio package.

Distorted rocksalt structure of Ge2Sb2Te5 using CASTEP module

(unpublished)

• In-situ sheet resistance measurement.

In-situ sheet resistance of Ge2Sb2Te5

(unpublished)

0 50 100 150 200 250 300

103

104

105

106

107

108

Shee

t Res

ista

nce

(Ohm

/cm

2 )

Temperature (oC)

Ge2Sb2Te5

• Device characterization using source meter and pulse generator

Thin Film Processing

• Design and fabrication of UHV ion beam sputtering deposition (IBSD) system.

• Vacuum equipment handling.

• Thin film growth using ion beam, sputtering, and e-beam methods.

Ion Trajectory Simulation

• Ion trajectory and ion beam simulation using SIMION and PBGUNS.

Korean Patent Registration No.: 10-0833647-0000 (2008.05.23)

REFERENCES

1 Mann-Ho Cho,

Dissertation Advisor, Professor, Institute of Physics and Applied Physics, Yonsei University

Seodaemoon-Gu Sinchon-dong 134, Seoul, 120-749, Korea.

Phone: +82-2-2123-5610, e-mail: mh.cho@yonsei.ac.kr

2 Chung Nam Whang

Professor, Institute of Physics and Applied Physics, Yonsei University

Seodaemoon-Gu Sinchon-dong 134, Seoul, 120-749, Korea.

Phone: +82-2-2123-3841, e-mail: cnwhang@phya.yonsei.ac.kr

3 Kwangho Jeong,

Professor, Institute of Physics and Applied Physics, Yonsei University

Seodaemoon-Gu Sinchon-dong 134, Seoul, 120-749, Korea.

Phone: +82-2-2123-3895, e-mail: khjeong@yonsei.ac.kr