CREE 1200V 80mohm MOSJFET CMF20120 - System Plus · 9 rue Alfred Kastler - BP 10748 - 44307 Nantes...
Transcript of CREE 1200V 80mohm MOSJFET CMF20120 - System Plus · 9 rue Alfred Kastler - BP 10748 - 44307 Nantes...
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© 2011 by SYSTEM PLUS CONSULTING, all rights reserved. CREE 1200V 80mohm MOSJFET – CMF20120 1
9 rue Alfred Kastler - BP 10748 - 44307 Nantes Cedex 3 - France
Phone : +33 (0) 240 180 916 - email : [email protected] - website : www.systemplus.fr
April 2011 - Version 1
Written by: Sylvain HALLEREAU
DISCLAIMER : System Plus Consulting provides cost studies based on its knowledge of the manufacturing and selling prices of electronic components and systems. The given values are realistic
estimates which do not bind System Plus Consulting nor the manufacturers quoted in the report. System Plus Consulting is in no case responsible for the consequences related to the use which is
made of the contents of this report. The quoted trademarks are property of their owners.
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© 2011 by SYSTEM PLUS CONSULTING, all rights reserved. CREE 1200V 80mohm MOSJFET – CMF20120 2
Table of Contents
Executive Summary
Table of Contents
Reverse Costing Methodology
1. Physical Analysis
Physical Analysis Methodology
Package
Die Overview
Guard Ring
Passivation
Metal Layer
MOSFET Gate
SIMS Analysis
Substrate and epitaxy
Back Side
Thickness Synthesis
MOSFET Structure &Characteristics
2. Manufacturing Process
Process Flow
Wafer Fabrication Unit
2
4
5
6
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3. Manufacturing Cost
Wafer Cost data
Yields Explanation
MOSFET Unprobed Wafer Cost
Wafer Cost per process steps
Equipment Cost per Family
Material Cost per Family
Die per Wafer and Probe Test
Probe Test
Dicing and Package
Final Test Cost
MOSFET Die Cost
Yields synthesis
Price estimation
Contact
Glossary
42
57
61
62
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© 2011 by SYSTEM PLUS CONSULTING, all rights reserved. CREE 1200V 80mohm MOSJFET – CMF20120 3
Die in the Package
Gate bond
Source bond The Drain is directly soldered on the
package leadframe with SAC solder.
5 Aluminum wire bonds :
Gate bond : 7mm and 200µm of diameter.
Source bond : 7mm and 200µm of diameter.
G
S D
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© 2011 by SYSTEM PLUS CONSULTING, all rights reserved. CREE 1200V 80mohm MOSJFET – CMF20120 4
Gate contacts
Source area
Source
SEM views : Die after the delayering. The passivation and aluminum layer are etched.
Die Overview - Delayering
Gate
Area where the
aluminum pad is in
contact with
source doping
Gate under an
SiO2 dielectric
layer.
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© 2011 by SYSTEM PLUS CONSULTING, all rights reserved. CREE 1200V 80mohm MOSJFET – CMF20120 5
SEM view : metal and passivation layer details
Si3N4 layer
Optical view : passivation details
Aluminum layer
Passivation borderline
Passivation Layer
Pad
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© 2011 by SYSTEM PLUS CONSULTING, all rights reserved. CREE 1200V 80mohm MOSJFET – CMF20120 6
MOSFET Gate
Gate in Polysilicon
Gate in Polysilicon
SiO2 : 3 layers of SiO2 are deposited
on the gate to insulate it.
Thin gate oxide =
52nm
SEM view : Gate detail, small recess
The recesses may be done to eliminate the first atomic
layers damaged by the ionic implantations.
SEM view : Gate detail high magnification
Second SiO2 thin layer
First SiO2 thin layer
Third SiO2 thin layer
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© 2011 by SYSTEM PLUS CONSULTING, all rights reserved. CREE 1200V 80mohm MOSJFET – CMF20120 7
SIMS analysis
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© 2011 by SYSTEM PLUS CONSULTING, all rights reserved. CREE 1200V 80mohm MOSJFET – CMF20120 8
Process Flow (1/3)
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© 2011 by SYSTEM PLUS CONSULTING, all rights reserved. CREE 1200V 80mohm MOSJFET – CMF20120 9
MOSFET Unprobed Wafer Cost
• The main part of the wafer cost is due to the
raw wafer (XX.X%).
• The manufacturing yield is around XX% in 2011.
Details of the cost per step are given in the Excel
Spreadsheet
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© 2011 by SYSTEM PLUS CONSULTING, all rights reserved. CREE 1200V 80mohm MOSJFET – CMF20120 10
Selling Price
Note: These calculated selling prices are for large quantities purchased directly from CREE.
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