COMPONENT TESTH4IRRAD15TH NOVEMBER 2011

G. Spiezia, P. Peronnard, G. Foucard, S. Danzeca, P. Gander, E. Fadakis (EN/STI/ECE)

Outline

Component description Goal of the test Setup Radiation conditions and dosimetry Results Conclusions

Components under test

DUT Type-Tec

Voltage Parameters Nb

partsTemperature ºC

AD822 Jfet-Amp +/-5 V

Current bias/OffsetLatch-up

2 Room

AD8220 DiffAmp +/-5 V OffsetLatch-up 2 Room

LTC2052 OpAmp-CMOS +/-5 V Offset

Latch-up 2 Room

XC95108 CPLD +5 V Latch-up 3 70

XC95108 CPLD +5 V Latch-up 3 Room

MAX11046 ADC +5 V Latch-up 3 75

PCM1702k DAC +/-5 V Latch-up 3 75

Motivation Compare test at H4IRRAD and PSI for a

better understanding of the ELDRS effect and destructive events

Some devices taken from the TRAD report AD822

Known to be sensitive to ELDRS To be tested at PSI at higher dose rate

AD8220 Tested at PSI and failed at 40 Gy Comparison with H4IRRAD

LTC2052 LET threshold for latch-up at <10 MeV.cm2/mg.,

sth=10-6 cm2 ssat=10-4

Test at H4IRRAD and PSI to verify if latch-up are induced

Motivation CPLD XC95108

Tested at PSI HI and showed latch-up Comparison with H4IRRAD. Test at room

temperature and heated Implementation of a shift registers

MAX11046-16 bit ADC Tested at PSI. No Latch-up Comparison with H4IRRAD. Test at room

temperature and heated PCM1702K- 20 bit DAC

Possible use of the component Test at H4IRRAD to verify destructive events.

Test at room temperature and heated Test at PSI to verify the TID and the cross

section for Soft and destructive SEE

SETUP Monitoring of the parameter drift

Amplifier parameters, ADC reference, and current consumption measured with a multimeter. Slow acquisition

Latch-up test Separate anti latch-up circuit for each positive and

negative Voltage supply Unique anti latch-up circuit for the 3 ADC MAX11046

and the amplifiers 16 channels acquired at 1 MS/s for the latch-up detection

H4IRRAD – Beam conditions H4IRRAD Internal location Mixed field and high energy hadrons

±5 cm

±10 cm

@ M. Calviani

H4IRRAD – Beam conditions H4IRRAD Internal location

target

Top of internal rack with component test

H4IRRAD – Beam conditions H4IRRAD Internal location

1.2e9 pot per cycle Cycle ~ 45 s Bunch length 5 s TID/Pot ~ 3e-12 [Gy/pot] TID per cycle ~ 3.6 mGy TID during extraction (5s)=2.6Gy/h Average Dose rate (3.6 mGy over 45 sec)

= 0.3 Gy/h Recommended dose rate to evaluate ELDR

H4IRRAD – Dosimetry FLUKA calculation (TID in air)

High gradient on the target line

TID 35 Gy, HEH 4-5x1010 cm-2

H4IRRAD – Dosimetry for TID FLUKA calculation (TID in air)

High gradient on the target line Score position to be reviewed

Radfets on the RADMON (2 oxide Thickness)

FLUKA [Gy Air ]±50% 400nm [Gy -Si] 100nm [Gy -Si] TID ±50%  

19/06-27/06 70  30  46 

19/06-25/07 160  70  100  100±50 

19/06-21/07 130  60  85  85±40 

SLOT 319/10-7/11 32 25(TO be Verified) 35 35±17

H4IRRAD – Dosimetry for TID FLUKA calculation (TID in air)

High gradient on the target line Score position to be reviewed

Radfets on the RADMON (2 oxide Thickness) HEH fluence is ~5x1010cm-2

POT= 1.12e+013 Radmon 1 Radmon 2 Radmon 3 Radmon 4 Radmon 5

Fluka Fluence HEH [cm-2] 5,62E+09 1,20E+10 2,62E+10 6,12E+10 8,35E+09

Fluence with SEU/TID ±11% 3,50E+09 1,07E+10 2,59E+10 4,78E+10 5,66E+09

Fluence with SEU/POT ±16% 0,00E+00 0,00E+00 3,20E+10 5,07E+10 0,00E+00

% Difference Fluka vs SEU/TID

38 11 1 22 32

% Difference Fluka vs SEU/POT

- - -22 17 -

Results

DUT TypeTechnology

PSI, p+, >250Gy/h *

H4IRRAD0.3 Gy/h *

H4IRRADHEH [cm-

2]**

Temperature

AD822 Jfet-Amp No tested 35-ok 0 latch Room

AD8220 DiffAmp 40 Gy - broken 35-ok 0 latch Room

LTC2052 OpAmp-CMOS

Not tested yet 35-ok 0 latch Room

XC95108 CPLD 35 – ok 0 latch Room

XC95108 CPLD 35 - ok 2 latch 70 C

MAX11046

ADC- BiCMOS

200 Gy-Broken 35 – ok 0 latch 80 C

PCM1702k DAC 0 latch 70 C

•*Max TID without failure or TID at which measurements are out of spec•**Fluence/ nb latch

Results Notes

Signals are noisy due to long cables Decimation is applied for analysisA

mplit

ude [

V]

October November

Noise

Expected level

Results – AD822

H4IRRAD 3 Gy/h(per

extraction) 0.3Gy/h (average) 35 Gy Within

specification but TID is low

PSI test to be done

NSREC2009: Ibias degradation at about 50-70 Gy at 0.01 rad/s0.3 Gy/h

~35 Gy (100nm radfet measurement)

Ibias current

Results – AD8220 PSI

250 Gy/h 230 MeV p+ 30 Gy –failure Ibias very high as

soon as the beam is on-1nA

H4IRRAD 3 Gy/h(per

extraction) 0.3Gy/h

(average)

Within specification

Differential amplifier; output signal

October November

Results – CPLD

H4IRRAD 5x1010cm2

2 Latch-up events on the heated CPLD

Results – CPLD

H4IRRAD 5x1010cm2

2 Latch-up events on the heated CPLD

Power ON

Power OFF

Current increase to 500 mA

First event

Results – CPLD

H4IRRAD 5x1010cm2

2 Latch-up events on the heated CPLD

Power ON

Power OFF

Current increase to 500 mA

Results – CPLD

H4IRRAD 5x1010cm2

2 Latch-up events on the heated CPLD

Latch

Conclusions AD822

almost at the limit of specifications;

Seem to agree with literature

PSI test to be done

CPLD

Other components within specifications

2 Latch-up on the CPLD

No Latch-up on MAX11046 and PCM

Note

Signals are noisy

Detailed tests on mixed signal devices require a protected zone where a mother board can be placed

Comparison H4IRRAD (low dose rate and mixed field) – PSI (p+ 230 MeV, high flux, high dose rate)

Total TID 35 Gy; HEH fluence 5x1010cm-2

Less Fluence than expected

Difficult to compare

Back-up http://file.lw23.com/

file1/01589226.pdf

How to explain

H4IRRAD spectrum Spectrum in the target line is dominated

by high energy hadrons (Needed to verify destructive events)

Dose enhancement effect seems to appear mainly in case of Co60 irradiation

Microelectronics may degrade less in a Hadron environment with respect to pure gamma irradiation

Open point: depending on the technology, the Hadron energy (literature focused on proton), and the percentage composition of our spectrum

Results-slot 1 &2DUT

Type-Technology

PSI, p+, >250Gy/h *

H4IRRAD0.3 Gy/h *

Comment

MAX410 OpAmp-Bip 100 Gy-ok 85-ok

OPA2227 OpAmp 200 Gy -ok 85-ok

TL072 OpAmp 200 Gy-ok -

TL431 Voltage Ref 200 Gy-ok 85 – ok

TL432 Voltage Ref 200 Gy-ok 85 - ok

LM4041 Voltage Ref 200 Gy-Ok 85 – ok

INA141 DiffAmp 130Gy-Out of spec 85 - ok Limit of

spec

MAX6341 Voltage Ref (ADC)

25 Gy-Out of spec

25 Gy-Out of spec.

3 mV drift over 100 Gy* Max TID without failure

or TID at which measurements are out of spec