Comparative Evaluation of Static and Dynamic Performance ......d 'rxeoh sxovh whvw flufxlw...
Transcript of Comparative Evaluation of Static and Dynamic Performance ......d 'rxeoh sxovh whvw flufxlw...
Abstract
Keywords— silicon carbide switch; static characteristic; switching characteristics; reverse recovery; commutation
Rdson [m ] (25°C)
Id [A] (25°C) Structure
978-1-5386-1180-7/18/$31.00 ©2018 IEEE 2704
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A. Comparison of commutation with body-diode and SiC SBD
B. Comparison between SiC MOSFET with different Rds(on)
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A. Comparison between SiC MOSFET and cascode SiC JFET
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B. Comparison between planar and trench SiC MOSFET
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2010 Twenty-Fifth Annual IEEE Applied Power Electronics Conference and Exposition
2011 Twenty-Sixth Annual IEEE Applied Power Electronics Conference and Exposition (APEC)
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Journal of Electronic Materials
2010 Twenty-Fifth Annual IEEE Applied Power Electronics Conference and Exposition (APEC)
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in IEEE Trans. on Power Electronics
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