Comments on ‘The influence of the 1st AlN and the 2nd GaN layers on properties of AlGaN/2nd...
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Appl Phys A (2013) 113:339 DOI 10.1007/s00339-013-7937-3 RAPID COMMUNICATION Comments on ‘The influence of the 1st AlN and the 2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure’ Jing-Jing Dong Received: 3 August 2013 / Accepted: 14 August 2013 / Published online: 21 August 2013 © Springer-Verlag Berlin Heidelberg 2013 The influence of the 1st AlN interlayer and the 2nd GaN interlayer on properties of the Al 0.3 Ga 0.7 N/2nd AlN/2nd GaN/1st AlN/1st GaN HEMT structure was theoretically in- vestigated by self-consistently solving coupled Schrödinger and Poisson equations for the first time [1]. Some creative work has been done well in that paper. However, there are a few viewpoints that need to be discussed deeply. 1. The Fermi level should be shown in Figs. 2 and 6 so as to visually explain the decrease of the 2DEG in the potential well. 2. According to physical laws, the 2DEG always tends to be steady and stay in the lower energy level. However, the 2nd potential well in Figs. 2 and 6 is always higher than the 1st one. And, it seems that the 2DEG should not stay in the 2nd potential well. Nevertheless, the 2DEG J.-J. Dong (B ) School of Science, China University of Geosciences, Beijing 100083, China e-mail: [email protected] appears in the 2nd one in some cases. This phenomenon should be explained more deeply. 3. How does the 2DEG transfer from one potential well to another? In other words, under what conditions does the 2DEG transfer happen? This should be discussed further. Acknowledgements This work was financially supported by the Fundamental Research Funds for the Central Universities (Grant No. 2652013067). References 1. Y. Bi, X.L. Wang, C.B. Yang, H.L. Xiao, C.M. Wang, E.C. Peng, D.F. Lin, C. Feng, L.J. Jiang, Appl. Phys. A 104, 1211 (2011)
Transcript of Comments on ‘The influence of the 1st AlN and the 2nd GaN layers on properties of AlGaN/2nd...
Appl Phys A (2013) 113:339DOI 10.1007/s00339-013-7937-3
R A P I D C O M M U N I C AT I O N
Comments on ‘The influence of the 1st AlNand the 2nd GaN layers on properties of AlGaN/2nd AlN/2ndGaN/1st AlN/1st GaN structure’
Jing-Jing Dong
Received: 3 August 2013 / Accepted: 14 August 2013 / Published online: 21 August 2013© Springer-Verlag Berlin Heidelberg 2013
The influence of the 1st AlN interlayer and the 2nd GaNinterlayer on properties of the Al0.3Ga0.7N/2nd AlN/2ndGaN/1st AlN/1st GaN HEMT structure was theoretically in-vestigated by self-consistently solving coupled Schrödingerand Poisson equations for the first time [1]. Some creativework has been done well in that paper. However, there are afew viewpoints that need to be discussed deeply.
1. The Fermi level should be shown in Figs. 2 and 6 so as tovisually explain the decrease of the 2DEG in the potentialwell.
2. According to physical laws, the 2DEG always tends tobe steady and stay in the lower energy level. However,the 2nd potential well in Figs. 2 and 6 is always higherthan the 1st one. And, it seems that the 2DEG should notstay in the 2nd potential well. Nevertheless, the 2DEG
J.-J. Dong (B)School of Science, China University of Geosciences,Beijing 100083, Chinae-mail: [email protected]
appears in the 2nd one in some cases. This phenomenonshould be explained more deeply.
3. How does the 2DEG transfer from one potential well toanother? In other words, under what conditions does the2DEG transfer happen? This should be discussed further.
Acknowledgements This work was financially supported by theFundamental Research Funds for the Central Universities (GrantNo. 2652013067).
References
1. Y. Bi, X.L. Wang, C.B. Yang, H.L. Xiao, C.M. Wang, E.C. Peng,D.F. Lin, C. Feng, L.J. Jiang, Appl. Phys. A 104, 1211 (2011)
