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Compound Semiconductor Week 2012
39th
International Symposium on Compound Semiconductors
24th
International Conference on Indium Phosphide and Related Materials
August 27-30, 2012
University of California
Santa Barbara, CA USA
Table of Contents
Welcome 2
General Information 3
ISCS/IPRM Conference Proceedings & Awards 5
ISCS 2012 Committees 7
IPRM 2012 Committees 10
Short Course Descriptions 13
Plenary Speakers 14
Conference Program-at-a-Glance 17
Oral Sessions Monday Aug. 27 21
Joint Poster Sessions Monday Aug. 27 26
Joint Rump Session Monday Aug. 27 33
Oral Sessions Tuesday Aug. 28 34
Joint Late News Tuesday Aug. 28 49
Oral Sessions Wednesday Aug. 29 50
Oral Sessions Thursday Aug 30 61
Exhibitors & Sponsors 68
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WELCOME
We welcome you to Compound Semiconductor Week (CSW) 2012 in Santa Barbara,
California, following CSW 2010 in Takamatsu, Japan and CSW 2011 in Berlin, Germany. This
is the premier forum for the dissemination of research findings on all aspects of compound
semiconductors. The 39th International Symposium on Compound Semiconductors (ISCS 2012)
and the 24th International Conferences on Indium Phosphide and Related Materials (IPRM 2012)
will again be co-located in Santa Barbara during CSW 2012. This will allow you to freely attend
sessions at both conferences.
CSW 2012 will start with a joint plenary session. The four distinguished plenary
speakers this year and the titles of their talks are William Deal, THz Integrated Circuits; John
Geisz, III-V Semiconductors for High-Efficiency Multijunction Photovoltaics; Andrew Shields,
Semiconductor Devices for Quantum Information Applications; Marc A. Taubenblatt, Optical
Interconnects for Computer-com. The opening session will be followed by 35 invited talks, 143
contributed oral presentations, and 55 poster presentations. Also included in the technical
program are two short courses and a rump session organized by IPRM.
The week will also include an awards session, an excursion to downtown Santa Barbara
with wine tasting and the conference barbeque on Goleta beach.
We extend our sincere thanks and appreciation to members of the Program Committees
for their tireless efforts in assembling a high quality technical program and to members of the
International Steering Committees and the UCSB Committee on Local Arrangements for their
help. We also thank the exhibitors for their participation and support and gratefully
acknowledge the support provided by the Office of Naval Research.
We wish you all a pleasant stay in Santa Barbara and an enjoyable week attending CSW
2012, mingling with your colleagues, and taking in the sights and sounds of the Pacific coast.
Pallab Bhattacharya Mark Rodwell
Conference Chair, ISCS 2012 Kent Choquette
Conference Chairs, IPRM 2012
Diana Huffaker Miguel Urteaga
Program Chair, ISCS 2012 Tom Koch
Program Chairs, IPRM 2012
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Important On-Site Information
Welcome to UC Santa Barbara! The campus community has joined in an effort to make your
stay a pleasant and rewarding experience. We hope that you will take the opportunity to explore
the campus and local area, and that you will enjoy your time here.
ISCS/IPRM Program Schedule Please refer to this program book for details regarding session locations and special events. This
program book also contains a University Center floor plan with internet stations, Lagoon Plaza
exhibition floor plan and a UCSB campus map specific to the conference.
Registration Hours will be posted during the conference.
Parking Information
Your parking permit is only valid in the lot designated on the permit. After 5:00pm and during
the evening events on Monday and Tuesday, your Lot 22 Parking Permit is valid in Lot 3 near
the University Center. Please refer to the campus map in this program book for the location of
both of these lots. Your permit is NOT VALID in the following spaces: 30-Minute, Disabled,
Meters, Reserved or Restricted, Coastal Access, Enforced at all Times.
Meals in the Dining Commons
All participants staying on-campus should use their room keys to allow them access to meals in
the dining commons.
Additional Meals Your conference registration fee also includes the Welcome Reception Dinner on Sunday, Poster
Session Reception on Monday, Rump Session Reception on Monday, refreshment breaks,
catered lunches Monday through Wednesday, Exhibitor Reception on Tuesday and the Beach
Barbeque on Wednesday.
Participants Staying On-Campus (Campus Shuttle Service) Please make sure that you sign up at the Manzanita Village Residence Hall front desk for a
return shuttle, should you need one, to either the Santa Barbara Airport or the Goleta location for
the Santa Barbara Airbus.
Residential Network & University Center Wireless Network/Computer Stations All residence hall sleeping rooms offer free wireless high-speed Internet access.
Participants staying on-campus will receive a Perm Number & Pin at the residence hall upon
check-in. These numbers will also be used to access the wireless network in the common areas
in the residence hall and in the University Center. A Residential Network Service Center is
available for support: Please call the ResNet Service Center at 805-893-8777 (hours are
weekdays, 4:00-8:00pm / Saturdays and Sundays, 11:00am-3:00pm).
Off-campus attendees (those NOT staying in the residence halls), can receive a User ID and
Password for wireless access in the University Center at the Conference Registration Desk.
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Exhibition Schedule The exhibit area will be located adjacent to the University Center on the outdoor Lagoon Plaza.
Monday, August 27 9:30am - 5:00pm & 7:00 - 8:30pm
Tuesday, August 28 8:30am - 6:30pm
Wednesday, August 29 8:30am - Noon
Thursday, August 30 8:30am - Noon
Compound Semiconductor Week Abstracts
Both the IPRM and ISCS conference abstracts will be distributed at the conference on memory
stick.
Technical Program
The scientific program of CSW 2012 consists of plenary and invited talks as well as contributed
oral and poster presentations.
Invited talks will be divided into 25 minutes of presentation and 5 minutes for questions and
discussion.
Contributed oral presentation will be divided into 12 minute presentations with additional 3
minutes for questions and discussion.
ISCS/IPRM speakers have the opportunity to upload their talk to the UCSB “presentation
server.” Presentations will be accepted on the server if they are submitted at least 1 full business
day prior to the conference. After that time, you will need to bring your presentation materials on
removable media such as a USB flash drive.
Poster Presentation Guidelines
The Poster Session Reception will be held on Monday inside Corwin Pavilion East and outside
in Lagoon Plaza from 3:00-5:00pm. Push pins will be provided. There will be 1 poster on each
side of the board, for a total of 2 posters per board. Participants may begin putting up their
posters at Noon on Monday. Posters will remain up all day, and must be removed by 8:30pm on
Monday. Posters left behind will not be saved.
Excursion
On Wed. Aug. 29 from 1:30-5:30PM there will be a Santa Barbara Wine Tour Excursion.
Payment is separate for this activity. Departure from Manzanita Village Bus Loop at 1:30 PM.
Joint Conference Barbeque
On Wed. Aug. 29 from 5:30-7:30PM there will be a Goleta Beach BBQ. Payment is included in
registration.
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ISCS 2012 Conference Proceedings
Proceedings of the ISCS 2012 will be published as peer reviewed articles in physica status
solidi(c). The guest editors for this issue will be Professor Sanjay Krishna and Dr. Elena Plis,
University of New Mexico, Albuquerque. Manuscripts submitted for publication in pss(c)
should be up to 4 printed pages for contributed presentations and up to 8 printed pages for
invited presentations. Manuscripts in MS Word or PDF format must be submitted by August 26,
2012, using the online manuscript submission system: http://mc.manuscriptcentral.com/pssc
IPRM 2012 Conference Proceedings
The IPRM four page extended abstracts will be published on IEEExplore. The abstracts are due
July 13, 2012.
ISCS 2012 Awards
The International Symposium for Compound Semiconductors is the venue for presentation of
four prestigious awards:
• The Welker Award
• The Quantum Device Award
• The Young Scientist Award
• The Best Student Paper Award
The Welker Award was established in 1976 by Siemens AG in honor of Heinrich Welker, a
pioneer in the field of III-V compound semiconductors. The award is now supported by Osram
GmbH and presented for outstanding and pioneering research in the area of III-V compound
semiconductors.
The Quantum Device Award was initiated by Fujitsu Quantum Devices Ltd. in 2000 and is
now sponsored by the Japanese Section of the ISCS Steering Committee. The award honors
pioneering contributions to the field of compound semiconductor and quantum/nanostructure
devices which have made a major impact in the past two decades. New device concepts and
structures, device physics and modeling as well as device realization and characterization are
areas included in the award.
The Young Scientist Award is supported by the Symposium. Established in 1986, the award
acknowledges technical achievements in the field of compound semiconductors by a scientist
younger than 40 years on the first day of the Symposium.
The Best Student Paper will be selected by members of the program committee.
Presentation of the ISCS Awards will be made at a special session at 5 PM on Tuesday, August
28, 2012.
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IPRM Awards
Following a long-standing tradition two IPRM awards will be presented:
• IPRM 2012 Award
• IPRM 2012 Best Student Paper Award
The IPRM 2012 Award honors scientific and technical achievements in the field as well as major
contributions to the organization of IPRM. The recipient will be selected by the IPRM
International Steering Committee prior to the conference. The Best Student Paper Award will be
presented on behalf of the Organization and the Program Committee.
Presentation of the IPRM Awards will be made at a special session at 5 PM on Tuesday, August
28, 2012.
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ISCS 2012 COMMITTEES
Conference Chair
Pallab Bhattacharya, University of Michigan, Ann Arbor, MI, USA
Program Chair
Diana Huffaker, University of California, Los Angeles, CA, USA
Program Committee
A. Crystal Growth and Deposition Techniques
Chair: James Gupta, National Research Council, Ottawa, Canada
Richard Arès, Université de Sherbrooke, Canada
Richard Campion, The University of Nottingham, UK
Fumitaro Ishikawa, Osaka University, Japan
Tsong-Sheng Lay, National Sun Yat-Sen University, Taiwan
Soile Suomalainen, Tampere University of Technology, Finland
Shumin Wang, Chalmers University, Gothenburg, Sweden
Erin Young, University of California, Santa Barbara, USA
B. Oxides and Carbon Related Materials
Chair: Shizuo Fujita, Kyoto University, Japan
Taichi Otsuji, Tohoku University, Sendai, Japan
Alexander A. Balandin, University of California, Riverside, USA
Christopher J. Stanton, University of Florida, Gainesville, USA
Shintaro Sato, AIST, Ibaraki, Japan
Junichiro Kono, Rice University, Houston, USA
Shigefusa Chichibu, Tohoku University, Sendai, Japan
C. Nanotechnologies and Nanostructures
Chair: Yoshiro Hirayama, Tohoku University, Sendai, Japan
Munetaka Arita, University of Tokyo, Japan
Jonathan Finley, Technical University, Munich, Germany
Thomas Ihn, ETH Zürich, Switzerland
Chennupati Jagadish, Australian National University, Canberra, Australia
Kazuhiko Matsumoto, Osaka University, Japan
Robert Westervelt, Harvard University, Cambridge, USA
Baolai Liang, University of California, Los Angeles, USA
Andy Sachrajda, National Research Council, Ottawa, Canada
D. Physics, Simulation and Characterization
Chair: Holger Eisele, Technical University, Berlin, Germany
Randall M. Feenstra, Carnegie-Mellon University, Pittsburgh, USA
Shiro Tsukamoto, Anan National College of Technology, Tokushima, Japan
Friedhelm Bechstedt, Friedrich-Schiller University, Jena, Germany
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E. Emitters, Photodectors, Photovoltaics
Chair: Eric Tournié, Université Montpellier, France
Connie Chang-Hasnain, University of California, Berkeley, USA
John P. David, University of Sheffield, UK
Jérome Faist, ETH Zürich, Switzerland
Takeji Komiyama, University of Tokyo, Japan
Sanjay Krishna, University of New Mexico, Albuquerque, USA
Sarah Kurtz, National Renewable Energy Laboratory, Washington DC, USA
François Lelarge, Alcatel - Thales 3-5 Lab, Marcoussis, France
Martin Walther, Fraunhofer Institute, Freiburg, Germany
F. High Frequency and High Power Electronics
Chair: Tomás Palacios, Massachusetts Institute of Technology, Cambridge, USA
Kevin J. Chen, Hong Kong University of Science and Technology, Kowloon, Hong Kong
Toshihide Kikkawa, Fujitsu Laboratories Ltd., Atsugi, Japan
Tetsuya Suemitsu, Tohoku University, Sendai, Japan
Martin Kuball, University of Bristol, United Kingdom
Rüdiger Quay, Fraunhofer, Institute, Freiburg, Germany
Colombo R. Bolognesi, ETH Zürich, Switzerland
Mark Rodwell, University of California, Santa Barbara, USA
T. Paul Chow, Rensselaer Polytechnic Institute, Troy, USA
Gaudenzio Meneghesso, University of Padova, Italy
G. New Device Concepts (Spintronics, Metamaterials, Nanomagnetics)
Chair: Igor Zutic, University of Buffalo, USA
Pavle Radovanovic, University of Waterloo, Canada
Karel Vyborny, Academy of Sciences, Czech Republic
Hanan Dery, University of Rochester, USA
H. Flexible Optoelectronics Materials and Devices
Chair: Stephen Pearton, University of Florida, Gainesville, FL, USA
Chennupati Jagadish, Australian National University, Canberra, Australia
Elvira Fortunato, Universidade Nova de Lisboa, Portugal
Bengt Svensson, University of Oslo, Norway
Young Woo Heo, Kyungpook National University, Daegu, South Korea
I. Sensors and Actuators
Chair: Fan Ren, University of Florida, Gainesville, USA
Wayne Johnson, Kopin Corporation Inc., Taunton, USA
Jihyn Kim, Korea University, Seoul, South Korea
Shangjr (Felix) Gwo, National Tsing Hua University, Hsinchu, Taiwan
Jeffrey LaRoche, Raytheon, Andover, USA
ISCS International Steering Committee
Chair: Yasuhiko Arakawa, University of Tokyo, Japan
Oliver Ambacher, Fraunhofer IAF, Freiburg, Germany
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Colombo Bolognesi, ETH Zürich, Switzerland
James Coleman, University of Illinois at Urbana Champaign, USA
Nicolas Grandjean, École Polytechnique Fédérale de Lausanne, Switzerland
James S. Harris, Stanford University, Stanford, USA
Yoshiro Hirayama, Tohoku University, Sendai, Japan
Diana Huffaker, University of California at Los Angeles, USA
Umesh Mishra, University of California at Santa Barbara, USA
Henning Riechert, Paul Drude Institute, Berlin, Germany
Tom Tiedje, University of British Columbia, Canada
Eric Tournié, University of Montpellier, France
Charles Tu, University of California at San Diego, USA
Jong-Chun Woo, Seoul National University, South Korea
Naoki Yokoyama, National Institute of Advanced Industrial Science and Technology, Japan
Awards Committee
Chair: James J. Coleman, University of Illinois, Urbana-Champaign, USA
Henning Riechert, Paul Drude Institute, Berlin, Germany
Klaus Streubel, OSRAM, München, Germany
Charles Tu, University of California, San Diego, USA
Osamu Wada, Kobe University, Kobe, Japan
Claude Weisbuch, Ecole Polytechnique,Palaiseau, France
Naoki Yokoyama, National Institute of Advanced Science and Technology, Japan
Pallab Bhattacharya, Ex-Officio, University of Michigan, USA
Publication Editor (Physica Status Solidi)
Sanjay Krishna, University of New Mexico, Albuquerque, USA
UCSB Committee on Local Arrangements
Chair: Umesh Mishra
Whitney Morris
Angelica Diaz
Lisa Dahlen
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IPRM 2012 COMMITTEES
Conference Chairs
Mark Rodwell, University of California, Santa Barbara, USA
Kent D. Choquette, University of Illinois at Urbana-Champaign, USA
Program Chairs
Miguel Urteaga, Teledyne Scientific, Thousand Oaks, California, USA
Tom Koch, University of Arizona, Tuscon, USA
Program Committees
A. Bulk Materials and Epitaxy Minjoo Larry Lee (chair), Yale University, USA
Mark Wistey, University of Notre Dame, USA
John Geisz, National Renewable Energy Laboratory, USA
Amy Liu, IQE, USA
Paul Pinsukanjana, Intelliepi, USA
Bernardette Kunert, NAsP III/V GmbH, Germany
Kerstin Volz, Philipps-University Marburg, Germany
Thomas Hannappel, Ilmenau University of Technology, Germany
Yoon Soon Fatt, Nanyang Technological University, Singapore
K.Y. Norman Cheng, National Tsing Hua University, Taiwan
Akihiro Wakahara, Toyohashi University of Technology, Japan
Hiroo Yonezu, Toyohashi University of Technology, Japan
B. Nanostructures and Novel Materials Lars-Erik Wernersson (Chair), Lund University, Sweden
Ali Javey, UCBerkeley, USA
Val Zwiller, TU Delft , Netherlands
Suman Datta, Penn State, USA
Philip Pool, CNRC, Canada
Zhiming M. Wang, University of Arkansas, USA
Philippe Caroff, IEMN Lille, France
Ikuo Suemune, Hokkaido University, Japan
Udo Pohl, TU Berlin, Germany
C. Photonic and Photonic/Electronic Integration Technologies Christopher R. Doerr (Chair), Alcatel-Lucent Bell Labs, USA
Francisco Soares, Heinrich-Hertz-Institut (FhG/HHI), Germany
Fouad Karouta, Australian National Fabrication Facility, Australia
Jean-Louis Gentner, Alcatel-Thales III-V Lab, France
Masaki Kato, Infinera, USA
Pavel Cheben, NRC Institute for Microstructural Sciences, Canada
Michael Robertson, CIP, UK
Takaeshi Fujisawa, NTT, Japan
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D. Electron Devices Keisuke Shinohara (Chair), HRL Labs, USA
Gerry Mei, Northrop Grumman Corporation, USA
Arnulf Leuther, Fraunhofer IAF, Germany
Tom Low, Agilent, USA
Minoru Ida, NTT, Japan
Colombo Bolognesi, ETHZ, Switz
Josh Bergman, Teledyne Scientific, USA
Mitsuru Taneka, University of Tokyo, Japan
Yasuyuki Miyamoto, Tokyo Instititute of Technology, Japan
Eric Lind, Lund University, Sweden
E. Optoelectronics and Related Processing Technologies Joe Campbell (Chair), University of Virginia, USA
Christophe Kazmierski, Alcatel-Thales III-V Laboratories, France
Wyn Meredith, Compound Semiconductor Technologies, USA
Martin Moehrle, FhG-HHI, Germany
Sebastian Lourdudos, KTH, Sweden
Andreas Steffan, u²t Photonics AG, Germany
Eun Soo Nam, ETRI, Korea
Tongning Li, InPhenix, Inc., USA
Hideo Arimoto, Hitachi, Japan
IPRM International Steering Committee
Norbert Grote (Chair), Fraunhofer HHI, Germany
Shigehisa Arai, Tokyo Tech, Japan
Hajime Asahi, Osaka University, Japan
Brad Boos, Naval Research Laboratories, USA
Kent D. Choquette, University of Illinois, USA
Russ Dupuis, Georgia Institute of Technology, USA
Takatomo Enoki, NTT, Japan
Stephen Forrest, University of Michigan, USA
Hideki Hasegawa, Hokkaido University, Japan
Tahir Hussain, Hughes Research Laboratories, USA
Joe Lorenzo, Air Force Research Laboratories, USA
Sebastian Lourdudoss, Royal Institute of Technology, Sweden
John Marsh, Intense, UK
Yuichi Matsushima, Waseda University, Japan
Drew Nelson, IQE, UK
Greg Olsen, Sensors Unlimited, USA
Abderrahim Ramdane, CNRS/LPN, France
Mark Rodwell, University of California at Santa Barbara, USA
André Scavennec, Alcatel Thales III-V Lab, France
Franz-Josef Tegude, University of Duisburg, Germany
Iain Thayne, Glasgow University, UK
Osamu Wada, Kobe University, Japan
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Joel N Schulman, Aerospace, USA
Young-Kai Chen, Alcatel-Lucent, USA
Yoshiaki Nakano, University of Tokyo, Japan
UCSB Committee on Local Arrangements
Chair: Mark Rodwell
Trea DePrima
Whitney Morris
Angelica Diaz
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Short Course Descriptions
On Sunday August 26, two short courses will be presented. Registration is separate for each of
the two courses.
GaN Transistors: Physics and Technology (1-3pm) Debdeep Jena ([email protected])
University of Notre Dame, Notre Dame, IN 46556 USA
GaN transistors are attractive for high-power RF electronics, and are becoming increasingly
attractive for high-voltage switching. The advantages stem from the wide bandgaps, availability
of heterostructures with large band offsets, and electronic polarization. Since the concept of
polarization is relatively new in semiconductors, and yet, plays the central role in the design of
high-performance GaN transistors, the goals of this short course will be to discuss:
1) The concept of electronic polarization in semiconductors,
2) Effect of polarization in device electrostatics and transport,
3) How polarization has guided the design of high performance GaN HEMTs,
4) Open problems, and possible directions in the future.
InP HBT Circuits: RF, Tera-hertz and Mixed-Signal Circuits (3:30-5:30pm) Myung-Jun Choe ([email protected]) and Munkyo Seo ([email protected])
Teledyne Scientific Company, Thousand Oaks, CA, 91360 USA
Recent advances in InP HBT technologies have enabled design and implementation of 300-500+
GHz ICs, opening a pathway to fully integrated tera-hertz (0.3-3 THz) systems for imaging,
radar and communication. At these frequencies, we face several fundamental design challenges:
available active device gain is relatively low, while losses from passive devices are relatively
high. Local interconnects become an essential circuit element, as overall circuit sizes are
relatively large compared to a wavelength. Traditional analog-IC design style may not directly
scale to sub-millimeter-wave frequencies, while traditional RF design style may not be optimal
in terms of circuit size and operating bandwidth. For a successful IC design, a holistic design
approach is therefore necessary, where device, circuit, and their electromagnetic environment are
altogether considered from the early design phase. In the first part of this class, the design and
implementation of InP HBT ICs will be presented to illustrate such a design approach, including
various transceiver building blocks and a single-chip phased-locked loop, operating at 300 GHz
and beyond.
InP HBT technology has reached to a stage that high performance analog circuits can benefit
from its superior device performance. The device and interconnect technology has become
mature enough to lead to successful demonstrations of more complicated mixed-signal circuits
with unprecedented performance. During the latter part of this short course, a digital-to-analog
converter (DAC) is used as an example mixed-signal circuit that enjoys the high-speed operation
and large-scale integration of today’s InP HBT technology, and we will discuss:
1) DAC performance limitations,
2) A short review of DAC architectures ,
3) An example implementation of high-frequency high-dynamic range DAC,
4) Remaining issues and potential solutions to overcome the limitations.
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PLENARY SPEAKERS
THz Integrated Circuits
William Deal
Northrop-Grumman
Abstract:
In this talk, progress in scaling integrated circuits towards 1 THz operating frequencies is
described. In particular, integrated receiver results at 670 GHz will be presented, along with
Low Noise Amplifier (LNA) and Power Amplifier (PA) results. Packaging approaches will be
described, along with progress towards scaling to 850 GHz.
Biography
Dr. Bill Deal is a Department Staff Engineer at Northrop Grumman’s RF Product Center in
Redondo Beach, CA. He leads several MMIC development efforts, including Northrop
Grumman’s contract for the DARPA THz Electronics program, as well as developing his own
microwave and millimeter wave designs. He has authored and co-authored more than 75 journal
and conference papers, as well as 5 book chapters. Dr. Deal received the IEEE MTT-S
Outstanding Young Engineer Award in 2009, and the 2012 IEEE MTT-S “Tatsuo Itoh” Best
Paper Award for his work on Sub-Millimeter Wave Electronics.
III-V Semiconductors for High-Efficiency Multijunction Photovoltaics
John Geisz
National Renewable Energy Laboratory
Abstract
High-efficiency conversion of sunlight into electrical energy using III-V semiconductor materials
has been improving steadily in recent years. Partitioning the solar spectrum with multiple III-V
pn junctions, connected in series with tunneling diodes, can theoretically achieve 85% efficiency.
Lattice-matched three-junction GaInP/GaAs/Ge solar cells have achieved over 41% efficiency
under concentration, but continued improvements require a wider palette of compatible band
gaps. Novel III-V materials such as dilute nitrides and metamorphic (lattice-mismatched)
InGaAs ternaries are promising to better optimize band gaps and increase the number of
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junctions. Indeed, these materials have already pushed the efficiencies to 43.5% and 42.6%
respectively, but low defect densities are required to realize the full potential. When non-
radiative recombination is reduced significantly, the radiative limits of efficiency can almost be
reached with proper optical management as demonstrated with a recent 28.2% single junction
GaAs solar cell. Luminescent coupling between adjacent junctions can also become an important
optical effect when non-radiative mechanisms are minimized.
Biography
John Geisz is a Senior Scientist at the National Renewable Energy Laboratory. He earned his
Ph.D. degree in Chemical Engineering from the University of Wisconsin (Madison) and his
bachelor's degree from the University of Michigan (Ann Arbor). John joined NREL in 1995
where he has been studying the OMVPE growth and characterization of a variety of III-V
semiconductor materials for high-efficiency photovoltaic applications, including dilute nitrogen
and boron-containing III-V alloys, III-V growth on silicon, and lattice-mismatched growth. His
work includes demonstration of several world record-setting solar cell efficiencies. John is an
author of over 100 scientific publications. He is a member of the executive committee of the
American Association of Crystal Growth and has helped organize several crystal growth
conferences.
Semiconductor Devices for Quantum Information Applications
Andrew Shields
Toshiba Research Europe Limited
Abstract:
Light emitting diodes containing a self-organized quantum dot as the emissive element may be
used to generate single photons, as well as polarization-entangled pairs. Electrical injection of
the recombining carriers has the advantage of negating the need for a pump laser and its
awkward alignment with the dot, while potentially also allowing individual devices to be
addressed in a quantum integrated circuit. Moreover, the contacts may also be used to control
several aspects of the emission. For example, using sub-nanosecond voltage pulses it is possible
to coherently control the dot states, allowing the wavefunction of the emitted single photons or
entangled pairs to be manipulated. Furthermore, indistinguishable photons may be generated
from different dots, a prerequisite for scaling photonic approaches to quantum information
processing, by tuning the emission wavelength of each dot with an applied voltage. Recent
progress in using semiconductor devices for quantum communications and quantum logic gates
will also be presented.
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Biography:
Andrew Shields received a First Class Degree and PhD in Physics from Imperial College,
London. He was awarded a Royal Society Fellowship to work at the Max Planck Institute for
Solid State Research in Stuttgart, before joining the permanent staff at Toshiba Research Europe
in Cambridge in 1993, where he is currently Assistant Managing Director. He is best known for
R&D on semiconductor devices and their applications, having co-authored over 230 peer
reviewed articles, generating over 4400 citations, and over 70 patent applications in the field. He
pioneered the use of quantum dots to generate single photon pulses, demonstrating a device
described as the “world’s dimmest” LED, and more recently the first LED for entangled light.
Other research interests include high-speed single photon and photon number detection using
avalanche photodiodes. His team developed the first quantum key distribution system with a
range over 100km and the first with a sustained secure bit rate over 1 Mbit/sec.
Optical Interconnects for Computer-com
Marc A. Taubenblatt,
IBM Research
Abstract: Computing systems are exponentially increasing their dependence on optical
interconnects to meet their scaling bandwidth needs. Steady increases in computation density
have put pressure on the interconnect infrastructure to keep up. The requirements for these
interconnects include a critical set of metrics, that historically have focused on cost, but
increasingly consider power and density. Furthermore, reliability (component and data) and
latency must be considered as well. Thus the path forward to increasing bandwidth in these
systems is becoming an increasingly complex set of trade-offs. This talk will describe the major
applications for optical interconnects in computer systems, the relative metrics for these
applications and consider new technologies in this context.
Biography:
Marc Taubenblatt is currently Senior Manager, Optical Communications and High Speed Test, at
IBM's T.J. Watson Research Center, focusing on optical interconnects and high speed electrical
packaging for computer systems, and test and innovative diagnostic techniques for high
performance computer chips. Marc has had responsibility for the IBM Research world wide
optical interconnect strategy for the past 11 years. He also manages a research program on
advanced computing technology. He received a BS degree in Electrical Engineering from
Princeton University and MS and PhD degrees in Electrical Engineering from Stanford
University. Marc has been at IBM Research for over 26 years and is a member of the IBM
Academy of Technology.
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Conference-at-a-Glance
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Conference-at-a-Glance
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Conference-at-a-Glance
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Conference-at-a-Glance
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Monday August 27
8:15 AM – 12:00 PM
Opening and Plenary Session Room: Corwin Pavilion
Session Chairs: Mark Rodwell, University of California, Santa Barbara, USA
Pallab Bhattacharya, University of Michigan, USA
8:15 Opening Remarks
8:30 Plenary I
THz Integrated Circuits
William Deal, Northrop-Grumman, Redondo Beach, CA.
9:15 Plenary II
III-V Semiconductors for High-Efficiency Multijunction Photovoltaics
John Geisz, National Renewable Energy Laboratory, Golden, CO.
10:00 Coffee Break
10:30 Plenary III
Semiconductor Devices for Quantum Information Applications
Andrew Shields, Toshiba Research Europe Limited Cambridge, UK.
11:15 Plenary IV
Optical Interconnects for Computer-com
Marc A. Taubenblatt, IBM Research, T.J. Watson Research Center, NY.
12:00 PM – 1:30 PM Lunch Break
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Monday August 27
1:30 PM – 3:00 PM
Mo 1A: Nanowire Epitaxy and Applications Room: Corwin West
Session Chair: Yasuhiko Arakawa, University of Tokyo, Japan
1:30 Mo-1A.1
Emission Enhancement of Axial Ga(In)As Nanopillar Heterostructures with
GaAs(P) Diffusion Barriers (Invited)
A.C. Scofield, C. Tu, J.N. Shapiro, A. Lin, B.L. Liang, D.L. Huffaker, University of
California, Los Angeles, USA
2:00 Mo-1A.2
Polarization-Induced pn-Diodes in Wide Band Gap Nanowires with Tunable Deep
Ultraviolet Electroluminescence S. D. Carnevale, T. F. Kent, P. J. Phillips, M. J. Mills, S. Rajan, R. C. Myers, The Ohio
State University, USA
2:15 Mo-1A.3
Au-Assisted Growth of InAs Nanowires on GaAs(111)B, GaAs(100), InP(111)B,
InP(100) by MOVPE
Shin Murakami, Akihiro Funayama, Kazuhiko Shimomura, Takao Waho, Sophia
University, Japan
2:30 Mo-1A.4
Carrier Lifetimes in InGaN/GaN Disks- in- Nanowire and Characteristics of Green
Light Emitting Diodes
Shafat Jahangir, Animesh Banerjee, Pallab Bhattacharya, University of Michigan, Ann
Arbor, USA
2:45 Mo-1A.5
The Nanopillar Lasers: Enabling Monolithic Integration with Si-Photonics
Fanglu Lu, Kun Li, Kar Wei Ng, Wai Son Ko, Connie Chang-Hasnain, University of
California, Berkeley, USA
3:00 PM – 3:30 PM Coffee Break
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Monday August 27
1:30 PM – 3:00 PM
Mo 1B: High Frequency Electronics Room: MultiCultural Center Theater
Session Chair: Tetsuya Suemitsu, Tohoku University, Sendai, Japan
1:30 Mo-1B.1
On-Chip Terahertz Photon Manipulation (Invited)
Kenji Ikushima, Tokyo University of A & T, Japan
2:00 Mo-1B.2
Impact of Vertical Leakage on the DC Performance of a Wafer-Bonded Aperture
Unipolar Transistor
Shalini Lal, Jing Lu, Stacia Keller, Steven P. Denbaars, Umesh K. Mishra, University of
California, Santa Barbara, USA
2:15 Mo-1B.3
AlGaN/GaN MIS-Gate HEMTs with SiCN Gate Stacks
K. Kobayashi, M. Kano, T. Yoshida, R. Katayama, T. Matsuoka, T. Otsuji, T. Suemitsu,
Tohoku University, Japan
2:30 Mo-1B.4
Influence of a Thin InAlN Cap Layer on the Device Performance of N-Polar
InAlN/GaN MISHEMTs Grown by MOCVD
Jing Lu, Dan Denninghoff, Matthew Laurent, Geetak Gupta, Stacia Keller, Steven P.
DenBaars, Umesh K. Mishra, University of California, Santa Barbara, USA
2:45 Mo-1B.5
On the Origin of Electroluminescence Spots and Surface Defects on AlGaN/GaN
HEMTs upon Off-State Stress
M. Montes, M. J. Uren, M. Kuball, University of Bristol, United Kingdom
3:00 PM – 3:30 PM Coffee Break in Lagoon Plaza
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Monday Aug. 27
1:30 PM – 3:00 PM
Mo 1C: Hybrid Integration Room: University Center Harbor Room
Session Chair:
1:30 Mo-1C.1
Compact InP-based 1Ã 2 MMI Splitter on Si Substrate with BCB Wafer Bonding
for Membrane Photonic Circuits
J. Lee, Y. Yamahara, Y. Atsumi, T. Shindo, N. Nishiyama, and S. Arai, Department of
Electrical and Electronic Engineering, Tokyo Institute of Technology, Tokyo, Japan
1:45 Mo-1C.2
Reflection-Assisted Unidirectional Hybrid-Silicon Microring Lasers
D. Liang, S. Srinivasan, D. A. Fattal, M. Fiorentino, Z. Huang, D. T. Spencer, J. E.
Bowers, R. G. Beausoleil, Intelligence and Infrastructure Lab, HP Labs, Palo Alto, CA,
USA
2:00 Mo-1C.3
Integrated Hybrid III-V/Si Laser and Transmitter (Invited)
Guang-Hua Duan, III-V Lab
2:30 Mo-1C.4
Hybrid InP-Polymer 30 nm tunable DBR Laser for 10 Gbit/s direct Modulation in
the C-Band
H. Klein, C. Wagner, W. Brinker, F. Soares, D. Felipe, Z. Zhang, C. Zawadzki, N. Keil
and M. Moehrle, Fraunhofer Institute for Telecommunications, Heinrich-Hertz-Institute,
Berlin, Germany
2:45 Mo-1C.5
High-Speed Optical Phased Array Using High-Contrast Grating All-Pass Filters
W. Yang, T. Sun, Y. Rao, M. Megens, T. Chan, B. W. Yoo1, D. A. Horsley, M. C. Wu1,
and C. J. Chang-Hasnain, Department of Electrical Engineering and Computer Sciences,
University of California at Berkeley, Berkeley, California, USA
3:00 PM – 3:30 PM Coffee Break in Lagoon Plaza
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Monday Aug. 27
1:30 PM – 3:00 PM
Mo 1D: Resonant Tunneling Devices Room: University Center State Street Room
Session Chair: Patrick Fay, University of Notre Dame. USA
1:30 Mo-1D.1
Tunnel Field-Effect Transistor Perspective (Invited)
Alan Seabaugh, University of Notre Dame
2:00 Mo-1D.2
71 mV/dec of Sub-Threshold Slope in Vertical Tunnel Field-Effect Transistors with
GaAsSb/InGaAs Heterostructure
M. Fujimatsu, H. Saito, and Y. Miyamoto, Department of Physical Electronics, Tokyo
Institute of Technology, Tokyo, Japan
2:15 Mo-1D.3
A 1.3 pJ/bit Energy-Efficient Ultra-Low Power On-off mode Oscillator Using an
InP-based Quantum-effect Tunneling Device
J. Lee, J. Lee, J. Park and K. Yang, Department of Electrical Engineering, Korea
Advanced Institute of Science and Technology, Daejeon, Republic of Korea
2:30 Mo-1D.4
Optimized RTD-HBT VCO Design Based On Large Signal Transient Simulations
B. M nstermann, A. Tchegho, G. Keller and F. J. Tegude, Solid-State Electronics
Department, University of Duisburg-Essen, Germany
2:45 Mo-1D.5
Sensitive High Frequency Envelope Detectors Based on Triple Barrier Resonant
Tunneling Diodes
G. Keller, A. Tchegho, B. M nstermann, W. Prost, and F. J. Tegude, Center for
Semiconductor Technology and Optoelectronics, University of Duisburg Essen,
Duisburg, Germany
3:00 PM – 3:30 PM Coffee Break in Lagoon Plaza
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Monday Aug. 27
3:30 PM – 5:00 PM
Mo P: Joint Posters Room: Corwin Pavilion East & Lagoon Plaza
Session Chair: Diana Huffaker, University of California Los Angeles, USA
Miguel Murteaga, Teledyne Scientific, Thousand Oaks, California, USA
Mo-P.1
CF4 Plasma Treatment for Leakage Reduction in N-Polar
Geetak Gupta, Jing Lu, Shalini Lal, Stacia Keller, Umesh Mishra, University of
California, Santa Barbara, USA
Mo-P.2
Impact of a Source Connected Field Plate on the High Voltage Performance of GaN-
on-Silicon HEMTs T. Boles, C. Varmazis, D. Carlson, M/ACOM Technology Solutions, USA; T. Palacios,
G. W. Turner, R. J. Molnar, Massachusetts Institute of Technology, USA
Mo-P.3
Insulating Behaviour of Interfaces in Regrown
B. Reuters, H. Hahn, H. Behmenburg, M. Heuken, H. Kalisch, A. Vescan, RWTH
Aachen University, Germany; M. Heuken, AIXTRON SE, Germany
Mo-P.4
Impact Ionisation on Planar GaAs Gunn Diodes: Analysis and Reduction by Anode
Design
M. Kuball, M. Montes, University of Bristol, U.K.; G. Dunn, A. Stephen, University of
Aberdeen, U.K.; Ata Khalid, C. Li, V. Papageorgiou, D. R. S. Cumming, University of
Glasgow, U.K.; C. H. Oxley, R. H. Hopper, DeMontfort University, U.K.
Mo-P.5
Hot-Carrier Degradation of AlGaN HEMT
Shubhajit Mukherjee, Ronald D. Schrimpf, M. Fleetwood, Yevgeniy S. Puzyrev,
Sokrates T. Pantelides, Vanderbilt University, USA; John M. Hinckley, Daniel Jasprit
Singh, University of Michigan, USA
Mo-P.6
Stress-Assisted Chemical Wet-Etching Process to Remove the Sapphire Substrate
for Vertical Devices
Wang Liancheng, Yi Xiaoyan, Guo Enqing, Zhang Yiyun, Xie Haizhong, Zheng
Haiyang,Wang Guohong, Chinese Academy of Sciences, China
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Mo-P.7
Electrical Property of C16TAB/Si Hetero-Structure Yoko Deguchi, Mari Taguchi, Eriko Otsuka, Atsumi Ozawa, Hajime Imai, Japan
Women’s University
Mo-P.8
The Properties of the Interlayer on Vertical n-GaN Nanoneedle/p-Type Organic
Hybrid Heterostructure
Min Jeong Shin, Minji Kim, Dong Oh Kwon, Hyung Soo Ahn, Sam Nyung Yi, Korea
Maritime University, Korea; Young-Moon Yu, Pukyong National University, Korea;
Dong Han Ha, Korea Research Institute of Standards and Science, Korea
Mo-P.9
Anisotropic Metal-Assisted-Chemical-Etching for III-V Compound Semiconductors
Parsian Mohseni, Karthik Balasundaram, Matt DeJarld, Jae Cheol Shin, Debashis
Chanda, John A. Rogers, Xiuling Li, University of Illinois, Urbana, USA
Mo-P.10
Behavior of Hydride Vapor Phase Epitaxy-Grown GaN Layers on Sapphire
Substrates in Successful Natural Stress-Induced Separation
K. Yamane, M. Ueno, N. Okada, K. Tadatomo, Yamaguchi University, Japan; H. Furuya,
Tokuyama Corporation, Japan
Mo-P.11
Regrowth of AlGaN/GaN HEMT on N-Implanted Template W. Witte, B. Reuters, D. Fahle, H. Behmenburg, H. Hahn, H. Kalisch, A. Vescan, RWTH
Aachen University, Germany; M. Heuken, AIXTRON SE, Germany
Mo-P.12
AlGaAs Anode Heterojunction PIN Diodes
T. Boles, J. Brogle, D. Hoag, D. Carlson, M/ACOM Technology Solutions, USA
Mo-P.13
GaInAsP System Growth on InP/SiO2-Si and SiO2 Templates Fabricated by Direct
Wafer Bonding
Keiichi Matsumoto, Tatsunori Makino, Katsuya Kimura, Kazuhiko Shimomura, Sophia
University, Japan
Mo-P.14
Migration Enhanced Epitaxial Growth of m-Plane GaN on a m-Sapphire Substrates
Using Tungsten Carbide Buffer Layer
Wonbeom Chang, Sungkuk Choi, Soohoon Jung, Jinyeop Yoo, Jeungwoo Lee,
Byeongwoo Lee, Jiho Chang, National Korea Maritime University, Korea; Dongcheol
Oh, Hoseo University, Korea; Wonjae Lee, Dong eui university, Korea
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Mo-P.15
Abnormal Change of Growth Rate During GaN Growth by Gas-Source MBE Under
the High V/III Ratio
Sungkuk Choi, Jinyeop Yoo, Soohoon Jung, Wonbeom Chang, Jeungwoo Lee, Sangtae
Lee, Jiho Chang, Korea Maritime University, Korea; Wonjae Lee, Dong eui University,
Korea; Takafumi Yao, Tohoku University, Japan
Mo-P.16
Effects of Nitridation Temperature for m-Plane GaN Grown on the m-Plane
Sapphire Substrate by Gas-Source Molecular Beam Epitaxy
Soohoon Jung, Sungkuk Choi, Jinyeop Yoo, Wonbeom Chang, Youngji Cho, Jeungwoo
Lee, Jiho Chang, Sangtae Lee, Korea Maritime University, Korea; Dongcheol Oh, Hoseo
University, Korea; Wonjae Lee, Dong Eui University
Mo-P.17
Selective Area Growth of GaAs Nanowires on Si Substrates Using Thin Porous SiOx
Layer
F. Karouta, S. Breuer, J. Tian, H. H. Tan, C. Jagadish, The Australian National
University, Australia
Mo-P.18
Doping Control in InAs Epitaxial Layers on Si
M. Berg, J. Svensson, S. Gorji Ghalamestani, E. Lind, L-E. Wernersson, Lund
University, Sweden
Mo-P.19
Strain Relaxation Mechanism in GaInN/GaN Heterostructure Characterized by in
situ X-ray Diffraction Monitoring During Metalorganic Vapor Phase Epitaxy
Growth
Motoaki Iwaya, Yasunari Kondo, Hiroyuki Matsubara, Mihoko Sowa, Toru Sugiyama,
Daisuke
Iida, Tetsuya Takeuchi, Satoshi Kamiyama, Meijo University, Japan; Isamu Akasaki,
Nagoya University, Japan
Mo-P.20
Characterization of Defects in InAs/GaSb Superlattice Infrared Detectors Using
Synchrotron White Beam X-ray Topography and Etch Pit Decoration
Martin Walther, Volker Daumer, Frank Rutz, Matthias Wauro, Johannes Schmitz, Lutz
Kirste, Robert Rehm, Fraunhofer-Institut für Angewandte Festkörperphysik, Germany;
Andreas Danilewsky, Albert-Ludwigs-Universität Freiburg, Germany; Ralf Scheibner,
AIM Infrarot-Module GmbH, Germany
Mo-P.21
Incident Angle Resolved Cathodoluminescence Study of ZnO Single Crystals
T. Onuma, Tokyo National College of Technology, Japan; T. Yamaguchi, T. Honda,
Kogakuin University, Japan
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Mo-P.22
Carrier Dynamics and Localization in AlInN/GaN Heterostructures S. Marcinkevičius, V. Liuolia, KTH Royal Institute of Technology, Sweden; D.
Billingsley, M. Shatalov, J. Yang, R. Gaska, Sensor Electronic Technology, USA; M. S.
Shur, Rensselaer Polytechnic Institute, USA
Mo-P.23
Minority Carrier Recombination Mechanisms of Heavily Be-Doped InGaAsSb
C. M. Chang, S. Y. Wang, J.-I. Chyi, National Central University, Taiwan; W. T. Hsu,
W. H. Chang, National Chiao Tung University, Taiwan
Mo-P.24
Optical Investigation of Al-Rich AlGaN/AlGaN Quantum Wells by Time-Resolved
Photoluminescence
Jianping Zeng, Jianchang Yan, Junxi Wang, Peipei Cong, Wei Li, Weiying Wang, Peng,
Jin, Jinmin Li, Chinese Academy of Sciences, China
Mo-P.25
X-Ray Photoelectron Spectroscopy Measurements around the Valence-Band of Ga-
and N-face (0001)GaN
Yohei Sugiura, Daiki Tajimi, Ryosuke Amiya, Tomohiro Yamaguchi, Tohru Honda,
Kogakuin University, Japan
Mo-P.26
Atomic Imaging of Nucleation and Passivation of SiGe(100) and Ge(100) via H2O
and HOOH Dosing
Tobin Kaufman-Osborna, Kiarash Kiantajb, Joon Sung Leea,, Andrew C. Kummel,
University of California, San Diego, USA
Mo-P.27
Optical Constants of Type-II InAs/InAsSb Superlattices Measured using
Spectroscopic Ellipsometry
P. T. Webster, N. A. Riordan, H. Liang, S. R. Johnson, O. O. Cellek, E. H. Steenbergen,
X.-M. Shen, H. Li, S. Liu, D. Ding, Q. Zhang, D. J. Smith, Y.-H. Zhang, Arizona State
University, USA
Mo-P.28
Using SEM-EBIC FIB and STEM to Locate and Characterize Defects in Epitaxial
GaN
Michael E. Salmon, Chunzhi Jitty Gu, Gary R. Mount, James P. Vitarelli, Evans
Analytical Group, USA
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Mo-P.29
Tensile Strain Induced Formation of Micro-Cracks around Surface Pits for
AlGaN/GaN Heterostructures
Junji Kotani, Shuichi Tomabechi, Toyoo Miyajima, Norikazu Nakamura, Toshihide
Kikkawa, Keiji Watanabe, Kenji Imanishi, Fujitsu Laboratories Ltd., Japan
Mo-P.30
The Critical Thickness of the 2D to 3D Transition of GaSb/GaAs Quantum Dots
Holger Eisele, Technische Universität Berlin, Germany
Mo-P.31
Improved Electrical Properties of Pressurized High Temperature Annealing of
Indium-Tin-Oxide and Its Application to Gas Sensor
Jieun Koo, Seunghwan Park, Woong Lee, Youngji Cho, Sangtae Lee, Jiho Chang,
National Korea Maritime University, Korea; Hyojong Lee, Dong-A University, Korea
Mo-P.32
Integration of LaLuO3 as High-κ Gate Dielectric into AlGaN/GaN MISHEMTs
Shu Yang, S. Huang, Kevin J. Chen, Hong Kong University of Science and Technology,
Hong Kong; M. Schnee, Q.-T. Zhao, J. Schubert, Peter Grünberg Institute, Germany
Mo-P.33
Impact of Native Defects in High-κ Dielectric Oxides on GaN/Oxide Metal-Oxide-
Semiconductor Devices
Minseok Choi, John L. Lyons, Anderson Janotti, Chris G. Van de Walle, University of
California, Santa Barbara, USA
Mo-P.34
Ultrathin Graphene Nanoribbon Transistors on Wafer-Scale Chemical-Vapor-
Deposited Graphene
Wan Sik Hwang, Pei Zhao, Kristof Tahy, Huili (Grace) Xing, Alan C. Seabaugh,
Debdeep Jena, University of Notre Dame, USA; Xuesong Li, Chun-Yung Sung, IBM T.
J. Watson Research Center, USA
Mo-P.35
InGaAs HEMTs with T-Gate Electrodes Formed by Multi-Layer SiCN Molds
Tomohiro Yoshida, Kengo Kobayashi, Taiichi Otsuji, Tetsuya Suemitsu, Tohoky
University, Japan
Mo-P.36
Improvement of the Electrical Properties of Al2O3 AlGaN/GaN MOSHFETs by
Gate-First Process
Eiji Miyazaki, Shigeru Kishimoto, Takashi Mizutani, Nagoya University, Japan
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Mo-P.37
High Transconductance Ion-Implanted GaN MISFETs Using Atomic Layer
Deposited High- κ Dielectrics
S. Gu, A. Ohoka, K. Lee, W. Lu, P. M. Asbeck, University of California, San Diego,
USA; H. Katayose, K. Nomoto, T. Nakamura, Hosei University, Japan
Mo-P.38
Potential of GaInNAs for Its Application to Micro-fabrication Optical Devices
Hiroaki Goto, Fumitaro Ishikawa, Masato Morifuji, Masahiko Kondow, Osaka
University, Japan
Mo-P.39
Fast GaN based Schottky Diodes on Si(111) Substrate with Low Onset Voltage and
Strong Reverse Blocking
E. Bahat Treidel, O. Hilt, A. Wentzel, J. Würfl, G. Tränkle, Ferdinand-Braun-Institut
Leibniz-Institut für Höchstfrequenztechnik, Germany
Mo-P.40
Low Sheet Resistance N-Polar GaN High Electron Mobility Transistor Structures
with Strain Management for Scaled Designs
Man Hoi Wonga, James S. Speck, Umesh K. Mishra, University of California, Santa
Barbara, USA
Mo-P.41
InAs/GaSb Type-II Strained Layer Superlattice Material on 111 GaSb Substrates
for High Operating Temperature Detection
Elena Plis, Brianna Klein, Nutan Gautam, Sanjay Krishna, University of New Mexico,
USA
Mo-P.42
Nitrate-Selective Gallium Nitride Transistor-Based Ion Sensors with Low Detection
Limit
M. Myers, A. Podolska, T. Pope, F.M.L. Khir, B.D. Nener, M.V. Baker, The University
of Western Australia, Australia; U.K. Mishra, University of California, Santa Barbara,
USA
Mo-P.43
Femto-Second Electron Transit Time Characterization in GaN/AlGaN Quantum
Cascade Detector at 1.5 Micron
A Vardi, G. Bahir, Technion-Israel Institute of Technology, Israel; S. Sakr, J. Mangeney,
M. Tchernycheva, F. H. Julien, Université Paris-Sud XI, France; K.W. Kandaswamy, E.
Monroy, Equipe Mixte CEA-CNRS, France; S. E. Schacham, Ariel University Center,
Israel
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Mo-P.44
Photoluminescence Peak Wavelength Behavior and Luminescent Efficiency of
InAs/InGaAsP/InP Quantum Dots Structure
Rie Sato, Ayako Fukuda, Tomomi Suzuki, and Hajime Imai; Faculty of Science, Japan
Women’s University, Toyko, Japan
Mo-P.45
Lattice Matched and Pseudomorphic InGaAs MOSHEMT with fT of 200GHz
Jiongjiong Mo; Institute of Electronics Microelectronics and Nanotechnology of Lille 1,
France
Mo-P.46
Monte Carlo Simulation of InGaAs/Strained-InAs/InGaAs Channel HEMTs
Considering Self-Consistent Analysis of 2-Dimensional Electron Gas
Akira Endoh, Issei Watanabe, and Takashi Mimura; National Institute of Information
and Communications Technology, Japan; Fujitsu Laboratories Ltd., Japan
Mo-P.47
Investigation of GaAs based MOVPE-grown AlxGa1-xAsyP1-y strain compensating
layers
A. Maassdorf, Anatol Lochmann, and M. Weyers; Ferdinand-Braun-Institut, Leibniz-
Institut fuer Hoechstfrequenztechnik Berlin, Germany; LayTec AG, Berlin, Germany
Mo-P.48
Enhancement-Mode Pseudomorphic High-Electron-Mobility Transistor with a
Nanoscale Oxidized GaAs Gate
Kuan-Wei Lee, Department of Electronic Engineering, I-Shou University, Taiwan,
R.O.C; Hsien-Cheng Lin, and Yeong-Her Wang; Institute of Microelectronics,
Department of Electrical Engineering, Advanced Optoelectronic Technology Center,
National Cheng-Kung University, Taiwan, R.O.C.
Mo-P.49
Source-Drain Scaling of Ion-Implanted InAs/AlSb HEMTs
Ginseppe Moschetti, Chalmers University of Technology, Goteborg, Sweden
Mo-P.50
Electro-Absorption Modulator Chirp Profile Influence on DEML Modulation
Scheme at 10 Gb/s
T. Anfray, C. Aupetit-Berthelemot, XLIM Dpt. C2S2 UMR CNRS 7252/University of
Limoges, Limoges, France; D. Erasme, K. Kechaou, Institut TELECOM, TELECOM
ParisTech, CNRS LTCI, Paris, France; G. Aubin, Laboratory for Photonics and
Nanostructures/CNRS, Marcoussis, France; C. Kazmiersky, III-V Lab, Marcoussis,
France; and P. Chanclou, Orange Labs, Lannion, France
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Mo-P.51
Fabrication and DC characterization of InAs/AlSb Self-Switching Diodes
Andreas Westlund, Chalmers University of Technology, Gothenburg, Sweden
Mo-P.52
Effect of temperature on series resistance determination of Au/polyvinyl alcohol/n-
InP Schottky structures
M. Siva Pratap Reddy, Hee-Sung Kang, Dong-Seok Kim, Young-Woo Jo, Chul-Ho Won,
Ryun-Hwi Kim, Kyu-Il Jang, Chandrashekhar C.H, Jung-Hee Lee, School of Electrical
Engineering & Computer Science, Kyungpook National University, Daegu, Korea; and
V. Rajagopal Reddy, Department of Physics, Sri Venkateswara University, Tirupati,
India
Mo-P.53
Estimation of Effective Mass and Subbands in Multiquantum Wells using Polarized
Light Irradiation
K. Tanaka, N. Happo, M. Fujiwara, Hiroshima City University, Hiroshima, Japan; N.
Kotera, Kyushu Institute of Technology, Iizuka, Japan
Mo-P.54
Single-Event Transient Sensitivity to Gate Bias in InAlSb/InAs/AlGaSb High
Electron Mobility Transistors
V. Ramachandran, R. D. Schrimpf, and R. A. Reed, Department of Electrical Engineering
and Computer Science, Vanderbilt University, Nashville, USA
Mondy August 27
7:00 PM – 8:30 PM
Joint Rump Session
Room: Corwin Pavilion West
Organizer: Alan Seabaugh (University of Notre Dame)
The final embodiment of the MOSFET at technology nodes below 15 nm is unknown. Will the
channel remain Si, will it become III-V, will it morph into a tunnel FET? Are nanowires,
nanotubes, or 2D materials viable options? Are there alternatives beyond the transistor for low
power, high density computing applications? This panel will address these questions and discuss
the ultimate MOSFET and beyond.
(panelists to be confirmed)
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Tuesday August 28
8:30 AM – 10:00 AM
Tu 1A: Photovoltaics Room: Corwin Pavilion West
Session Chair: Martin Walther, Fraunhofer Institute, Freiburg, Germany
8:30 Tu-1A.1
Optimization of Growth and Device Performance for InAs Quantum Dot Solar Cells
(Invited)
Seth M. Hubbard, Adam Podell, Chelsea Mackos, Steve Polly, David V. Forbes,
Rochester Institute of Technology, USA
9:00 Tu-1A.2
Patterned Core-Shell Nanopillar Photovoltaics Employing in Situ InGaP Surface
Passivation
Giacomo Mariani, Adam Scofield, Zhengliu Zhou, D. L. Huffaker, University of
California, Los Angeles, USA
9:15 Tu-1A.3
InP/AlInP Core-Multishell Nanowire Array Solar Cells
Masatoshi Yoshimura, EijiNakai, and Takashi Fukui, Hokkaido University, Japan;
Katsuhiro Tomioka, Japan Science and Technology Agency (JST)-PRESTO
9:30 Tu-1A.4
Hybrid Heterojunction Solar Cells Based on GaAs Nanopillar Arrays
M. A. Haddad, R. B. Laghumavarapu, D. L. Huffaker, University of California, Los
Angeles, USA; Liang Yan, Wei You, University of North Carolina, USA
9:45 Tu-1A.5
Temperature Dependence Photoreflectance Spectroscopy of InAs/GaAs Quantum
Dot Solar Cell S. S. Min, C. W. Sohn, I. S. Han, S. H. Lee, S. Jo Lee, Jong S. Kim, Yeungnam
University, Korea; S. K. Noh, Korea Research Institute of Standards and Science; Jin S.
Kim, Chonbuk National University, Korea; H. Choi, J. Y. Leem, Inje University, Korea
10:00 AM – 10:30 AM Coffee Break in Lagoon Plaza
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Tuesday August 28
8:30 AM – 10:00 AM
Tu 1B: Nanostructures and Nitrides Room: Corwin Pavilion East
Session Chair: Erin Young, University of California, Santa Barbara, USA
8:30 Tu-1B.1
High Density Mobile Two-Dimensional Hole Gas at GaN/AlN Heterostructures
Grown by MBE
Guowang Li, Ronghua Wang, Jai Verma, Huili (Grace) Xing, Debdeep Jena, University
of Notre Dame, USA
8:45 Tu-1B.2
High Quality Strain-Compensated Multiple InAs/GaNAs Quantum Dot Layers
Grown by MBE
Hong Ye, Yuxin Song, Mahdad Sadeghi, Shumin Wang, Chalmers University of
Technology, Sweden; Yi Gu, Shanghai Institute of Microsystem and Information
Technology, Chinese Academy of Sciences, China
9:00 Tu-1B.3
Gas-Source Molecular Beam Epitaxy of GaP/GaNP Core/Shell Nanowires: Growth
Structure Analysis and Optical Properties
Y. J. Kuang, S. Sukrittanon, C. W. Tu, University of California, San Diego, USA
9:15 Tu-1B.4
NH3-Rich Growth of InGaN and InGaN/GaN Superlattices by NH3-Based
Molecular Beam Epitaxy
J. R. Lang, J.S. Speck, University of California, Santa Barbara, USA
9:30 Tu-1B.5
Electrical Properties of S Doped n-Type GaPN by Alternately N Supplied
Organometallic Vapor Phase Epitaxy
Y. Nagamoto, K. Matsuoka, H. Sekiguchi, H. Okada, A. Wakahara, Toyohashi
University of Technology, Japan
9:45 Tu-1B.6
Molecular Beam Epitaxial Growth of GaAsN Nanowire on Si(111) Substrate
Yoshiaki Araki, Fumitaro Ishikawa, Osaka University, Japan; Masahito Yamaguchi,
Nagoya University, Japan
10:00 AM – 10:30 AM Coffee Break in Lagoon Plaza
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Tuesday August 28
8:30 AM – 10:00 AM
Tu 1C: Graphene Devices and Characteristics Room: MultiCultural Center Theater
Session Chair: Tetsuya Suemitsu, Tohoku University, Japan
8:30 Tu-1C.1
Graphene Synthesis and Devices (Invited)
Xiangfeng Duan, University of California at Los Angels
9:00 Tu-1C.2
Investigation of Graphene-Oxide-Semiconductor Band Alignment by Internal
Photoemission Spectroscopy Rusen Yan, Qin Zhang, Wei Li, Irene Calizo, Curt Richter, Angela R. Hight-Walker,
David Gundlach, Nhan V. Nguyen, National Institute of Standards and Technology,
USA; Alan Seabaugh, Huili Grace Xing, University of Notre Dame, USA; Xuelei Liang,
Peking University, China; Tian Shen, Purdue University, USA
9:15 Tu-1C.3
THz Reconfigurable Optoelectronic Devices Employing Graphene
Berardi Sensale-Rodriguez, Rusen Yan, Mingda Zhu, Subrina Rafique, Suresh
Vishwanath, Michelle Kelly, WanSik Hwang, Kristof Tahy, Vladimir Protasenko, Lei
Liu, Debdeep Jena, Huili (Grace) Xing, University of Notre Dame, USA
9:30 Tu-1C.4
Metal/Semiconducting Selective Synthesis of Single-Walled Carbon Nanotubes for
FET Applications Shunsuke Sakurai, Kenji Hata, Collaborative Research Team Green Nanoelectronics
Center (GNC), AIST, Japan; Maho Yamada, Hiroko Nakamura, Don N. Futaba,
Nanotube Research Center, AIST, Japan
9:45 Tu-1C.5
Top-Gated Epi-Graphene Nanoribbon Field-Effect Transistors with Output
Current of 10 mA/µm
Wan Sik Hwang, Kristof Tahy, Pei Zhao, Soo Doo Chae, Huili (Grace) Xing, Alan
Seabaugh, Debdeep Jena, University of Notre Dame, USA; Luke O. Nyakiti, Virginia D.
Wheeler, Rachael. L. Myers-Ward, C. R. Eddy Jr., D. Kurt Gaskill, U. S. Naval Research
Laboratory, USA
10:00 AM – 10:30 AM Coffee Break in Lagoon Plaza
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Tuesday Aug. 28
8:30 AM – 10:00 AM
Tu 1D - Optical Nanodevices on Si Room: University Center Harbor Room
Session Chair:
8:30 Tu-1D.1
III-V Nanowires on Si for Optoelectronics and Solar Applications (Invited) Anna Fontcuberta I Morral, EPFL
9:00 Tu-1D.2
Selective Area Heteroepitaxy of InP Nanopyramidal Frusta on Si for Nanophotonics
W. Metaferia, J. Tommila , H. Kataria, C. Junesand, Y. Sun, M. Guina,T. Niemi and S.
Lourdudoss, Laboratory of Semiconductor Materials, Kista, Sweden
9:15 Tu-1D.3
Characteristics of InP nanoneedles Grown on Silicon by low-temperature MOCVD
K. Li, F. Ren, R. Chen, T. T. D. Tran, K. W. Ng, and C. J. Chang-Hasnain, Department
of Electrical Engineering and Computer Sciences, University of California at Berkeley,
Berkeley, California, USA
9:30 Tu-1D.4
Silicon-based long-wavelength III-V quantum-dot lasers (Invited)
Huiyun Lun , University College London
10:00 AM – 10:30 AM Coffee Break in Lagoon Plaza
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Tuesday Aug. 28
8:30 AM – 10:00 AM
Tu 1E - High Speed Diode Technologies Room: University Center State Street Room
Session Chair: Yasuyuki Miyamoto, Tokyo Institute of Technology, Japan
8:30 Tu-1E.1
High Efficiency and Broad-Band Operation of Monolithically Integrated W-Band
HBV Frequency Tripler
Aleksandra Malko, Tomas Bryllert, Josip Vukusic and Jan Stake, Chalmers University of
Technology, Gothenburg, Sweden
8:45 Tu-1E.2
Lattice-Matched p+-GaAsSb/i-InAlAs/n-InGaAs Zero-Bias Backward Diodes for
Millimeter-Wave Detectors and Mixers
T. Takahashi, M. Sato, Y. Nakasha, and N. Hara, Fujitsu Laboratories Limited, Japan
9:00 Tu-1E.3
A W-Band InGaAs PIN-MMIC Digital Phase-Shifter Using the Switched
Transmission-Line Structure
J. G. Yang, J. Lee and K. Yang, Department of Electrical Engineering, Korea Advanced
Institute of Science and Technology, Daejeon, Republic of Korea
9:15 Tu-1E.4
Development of a 557 GHz GaAs Monolithic Membrane-Diode Mixer
H. Zhao, V. Drakinsky, P. Sobis, J. Hanning, A. Y. Tang, J. Stake, GigaHertz Center,
Department of Microtechnology and Nanoscience, Chalmers University of Technology,
Sweden
9:30 Tu-1E.5
Fundamental Oscillation up to 1.31 THz in Thin-Well Resonant Tunneling Diodes
H. Kanaya, H. Shibayama, S. Suzuki, and M. Asada, Interdisciplinary Graduate School of
Science and Technology, Tokyo Institute of Technology, Tokyo, Japan
9:45 Tu-1E.6
Design and Fabrication of InGaAs Photodiodes for SWIR Imagers with Low Dark
Current A. Djedidi, A. Rouvie, JL.Reverchon, M. Pires, N. Chevalier, D. Mariolle, N. Gambacorti, H.J.
Drouhin, III-V Lab, Palaiseau Cedex, France
10:00 AM – 10:30 AM Coffee Break in Lagoon Plaza
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Tuesday August 28
10:30 AM – 12:00 PM
Tu 2A: Infrared Sensors Room: Corwin Pavilion West
Session Chair: Elena Plis, University of New Mexico, Albuquerque, USA
10:30 Tu-2A.1
InN Based Chemical Sensor (Invited)
J. Andrew Yeh, Taiwan University, Taiwan
11:00 Tu-2A.2
Photovoltaic Operation of Quantum Dot Quantum Cascade Infrared Photodetector
A.V. Barve, S. Krishna, University of New Mexico, USA
11:15 Tu-2A.3
Multicolor Broad Band (5-20 µm) InAs/GaAs Quantum Dot Infrared Photodetector
with Ultra-High (7.7 A/W) Responsivity Sourav Adhikary, Subhananda Chakrabarti, Indian Institute of Technology, India; A. G.
U. Perera, Yigit Aytac, Georgia State University, USA
11:30 Tu-2A.4
InAsSb Nanowires for Long Wavelength Infrared Detectors
Johannes Svensson, B. Mattias Borg, Lars-Erik Wernersson, Kimberly A. Dick, Lund
University, Sweden
11:45 Tu-2A.5
InGaAsSb/AlInGaAsSb Laterally-Coupled Index-Grating Distributed Feedback
Laser Diodes for Hydrocarbon Detection Near 3.3µm - CANCELLED
J.A. Gupta, A. Bezinger, P.J. Barrios, J. Lapointe, D. Poitras, P. Waldron, National
Research Council of Canada, Canada
12:00 PM – 1:30 PM Lunch Break in Lagoon Plaza
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Tuesday August 28
10:30 AM – 12:00 PM
Tu 2B: Nanowire Epitaxy Room: Corwin Pavilion East
Session Chair: Kerstin Volz, Philipps-University Marburg, Germany
10:30 Tu-2B.1
Growth and Characterization of InAs/AlxIn1-xAs(P) Nanowires by Gas Source
Molecular Beam Epitaxy
C. M. Haapamaki, R. R. LaPierre, McMaster University, Canada; J. Baugh, University of
Waterloo, Canada
11:00 Tu-2B.2
InAs/InP Nanopillar Heterostructures by Selective-Area Epitaxy
Andrew Lin, Joshua Shapiro, Adam Scofield, Baolai Liang, D. L. Huffaker, University of
California, Los Angeles, USA
11:15 Tu-2B.3
Controlled n- and p-Type Doping of GaAs Nanowires
O. Salehzadeh, K. L. Kavanagh, S. P. Watkins, Simon Fraser University, Canada
11:30 Tu-2B.4
Sub-Micron Growth of InGaAs/GaAs Core-Shell Pillars on Silicon
Kar Wei Ng, Wai Son Ko, Thai-Truong D. Tran, Roger Chen, Fanglu Lu, Connie J.
Chang-Hasnain, University of California, Berkeley, USA; Maxim V. Nazarenko,
Vladimir G. Dubrovskii, St Petersburg Academic University, Russia; Martin Kamp,
Alfred Forchel, University of Würzburg, Germany
11:45 Tu-2B.5
Wafer-Scale InGaAs Nanowire Epitaxy on Si and Graphene Substrates
Parsian Mohseni, Jae Cheol Shin, Xiuling Li, University of Illinois, USA
12:00 PM – 1:30 PM Lunch Break in Lagoon Plaza
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Tuesday August 28
10:30 AM – 12:00 PM
Tu 2C: Oxides Room: MultiCultural Center Theater
Session Chair: James Speck, University of California, Santa Barbara, USA
10:30 Tu-2C.1
Single-crystal gallium oxide metal-semiconductor field-effect transistors (Invited)
Masataka Higashiwaki, Kohei Sasaki, National Institute of Information and
Communications Technology, Japan; Akito Kuramata, Shigenobu Yamakoshi, Tamura
Corporation, Japan; Takekazu Masui, Koha Co., Ltd., Japan
11:00 Tu-2C.2
Mist Chemical Vapor Deposition of Gamma-Phase Ga2O3 Thin Films
Takayoshi Oshima, Taishi Nakazono, Akira Mukai, Tokyo Institute of Technology,
Japan; Akira Ohtomo, ALCA, Japan Science and Technology Agency, Japan
11:15 Tu-2C.3
Room Temperature Ferromagnetism in Highly Crystalline Alpha-(GaFe)2O3 Thin
Films
Kentaro Kaneko, Shizuo Fujita, Kyoto University, Japan
11:30 Tu-2C.4
Synthesis of Al-O-N Ceramic Materials for UV Emitting Devices
Yujin Cho, Jiho Chang, National Korea Maritime University, Korea; Takashi Sekiguchi,
Benjamin Dierre, Takashi Takeda, Naoto Hirosaki, Woong Lee, National Institute for
Material Science, Japan
11:45 Tu-2C.5
Enhancement Mode AlInGaN/GaN MISHFETs with Plasma-Oxidised AlOx/TiOx as
Gate Insulator
H. Hahn, H. Behmenburg, N. Ketteniss, H. Kalisch, A. Vescan, RWTH Aachen
University, Germany; M. Heuken, AIXTRON SE, Germany
12:00 PM – 1:30 PM Lunch Break in Storke Plaza
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Tuesday Aug. 28
10:30 AM – 12:00 PM
Tu 2D - Optical Components Room: University Center Harbor Room
Session Chair: Kent Choquette, University of Illinois, Urbana, USA
10:30 Tu-2D.1
Integrated Optoelectronic Components for the Transmission and Reception of
Polarization- and Phase-Coded Optical Signals (Invited)
Andreas Umbach, U2T
11:00 Tu-2D.2
40 Gbit/s identical layer InGaAlAs-MQW electroabsorption-modulated DFB-lasers
operating between 1298 nm and 1311 nm
C. Bornholdt, H. Klein, G. Przyrembel, A. Sigmund, W. D. Molzowa, and M. Moehrle,
Fraunhofer Institute for Telecommunications, Heinrich-Hertz-Institute, Berlin, Germany
11:15 Tu-2D.3
Reflective Amplified Modulator Operating at 40 Gb/s up to 85ºC as Colorless
Transceiver for Optical Access Networks
K. Ławniczuk, O. Patard, R. Guillamet, N. Chimot, A. Garreau3 and C. Kazmierski, G.
Aubin and K. Merghem, Eindhoven University of Technology, Eindhoven, the
Netherlands
11:30 Tu-2D.4
InP Photonic Integrated Circuit with an AWG-like design for Optical Beam
Steering
Weihua Guo, ECE Department, Santa Barbara, California, USA
11:45 Tu-2D.5
Design Fabrication and Preliminary Test Results of a New InGaAsP/InP High-Q
Ring Resonator for Gyro Applications
F. Dell’Olio, C. Ciminelli, M.N. Armenise, F. M. Soares, W. Rehbein, Optoelectronics
Laboratory, Politecnico di Bari, Bari, Italy
12:00 PM – 1:30 PM Lunch Break in Storke Plaza
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Tuesday Aug. 28
10:30 AM – 12:00 PM
Tu 2E - Heterogeneous Integration Room: University Center State Street Room
Session Chair: Minjoo Lee, Yale University, USA
10:30 Tu-2E.1
Double-Layer Stepped Si(100) for III-V-on-Silicon Integration
H. D scher, P. Kleinschmidt, S. Br ckner, O. Supplie, A. Dobrich, and T. Hannappel,
Helmholtz- entrum Berlin f r Materialien und Energie, Berlin, Germany
10:45 Tu-2E.2
Atomic-Plane-Thick Reconstruction Across the Interface During Heteroepitaxial
Bonding of InP-Clad Quantum Wells to Si
A. Talneau, C. Roblin, A. Itawi, O. Mauguin, L. Largeau, G. Beaudouin, I. Sagnes and G.
Patriarche, Laboratoire de Photonique et de Nanostructures, Marcoussis, France
11:00 Tu-2E.3
Lattice Engineered Substrates (Invited) Eugene Fitzgerald, MIT
11:30 Tu-2E.4
Electrical Conduction Property at InAs/Si(111) Interface by Selective-Area MOVPE
S. Watanabe, K. Watanabe, A. Higo, M. Sugiyama, Y. Nakano, School of Eng, The
University of Tokyo, Tokyo, Japan
11:45 Tu-2E.5
Interface and Surface Dielectric Anisotropies of GaP/Si(100)
O. Supplie, T. Hannappel, M. Pristovsek, and H. D scher, Helmholtz- entrum Berlin f r
Materialien und Energie, Institut f r Solare Brennstoffe und Energiespeichermaterialien,
Berlin, Germany
12:00 PM – 1:30 PM Lunch Break in Storke Plaza
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Tuesday August 28
1:30 PM – 3:00 PM
Tu 3A: Optoelectronics and Photovoltaics Room: Corwin Pavilion West
Session Chair: Sanjay Krishna, University of New Mexico, Albuquerque, USA
1:30 Tu-3A.1
Flexible Optoelectronics (Invited) Elvira Fortunato, New University of Lisbon, Portugal
2:00 Tu-3A.2
Structural and Optical Properties of InAs/ AlAsSbSelf-Assembled Quantum Dots
for Intermediate Band Solar Cells
M. Sun, R. B. Laghumavarapu, A. Lin, D. L. Huffaker, University of California, Los
Angeles, USA; P. J. Simmonds, B. Liang, California NanoSystems Institute, USA
2:15 Tu-3A.3
Efficiency Enhancement in Solid Dye-Sensitized Solar Cell by Three-Dimensional
Photonic Crystal
Dae-Kue Hwang, Dae-Hwan Kim, Daegu-Gyeongbuk Institute of Science and
Technology, Korea; Byunghong Lee, Robert. P. H. Chang, Northwestern University,
USA
2:30 Tu-3A.4
Carrier Escape Mechanism Dependence on Barrier Thickness and Temperature in
InGaN Quantum Well Solar Cells
J. R. Lang, N. G. Young, R. M. Farrell, J. S. Speck, University of California, Santa
Barbara, USA; Y.-R. Wu, National Taiwan University, Taiwan
2:45 Tu-3A.5
GaAs/AlAs Superlattice Solar-Cell with X-Electron Conduction
Atsushi Kawaharazuka, Waseda University, Japan
3:00 PM – 3:30 PM Coffee Break in Lagoon Plaza
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Tuesday August 28
1:30 PM – 3:00 PM
Tu 3B: Power Electronics Room: Corwin Pavilion East
Session Chair: Paul Saunier, Triquint Semiconductor Inc., USA
1:30 Tu-3B.1
The Role of Microsystems for a Clean Energy Future (Invited)
Rajeev Ram, Advanced Research Projects Agency – Energy (ARPA-E)
2:00 Tu-3B.2
>1200 volt GaN-on-Silicon Schottky Diode
T. Boles, C. Varmazis, D. Carlson, M/ACOM Technology Solutions, USA; T. Palacios,
G. W. Turner, R. J. Molnar, Massachusetts Institute of Technology, USA
2:15 Tu-3B.3
GaN-Based High Voltage Transistors for Efficient Power Switching
P. Waltereit, R. Reiner, H. Czap, D. Peschel, S. Müller, R. Quay, M. Mikulla, O.
Ambacher
Fraunhofer Institute for Applied Solid State Physics, Germany
2:30 Tu-3B.4
Over 550 V Breakdown Voltage of InAlN/GaN HEMT on Si
H. Saito, Y. Takada, M. Kuraguchi, M. Yumoto, K. Tsuda, Toshiba Corporation, Japan
2:45 Tu-3B.5
Low ON-Resitance CAVETS with Ammonia MBE Regrown Active p-GaN Layer as
the Current Blocking Layer
Ramya Yeluri, Srabanti Chowdhury, Christophe A. Hurni, James S. Speck, Umesh K.
Mishra, University of California, Santa Barbara, USA
3:00 PM – 3:30 PM Coffee Break in Lagoon Plaza
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Tuesday August 28
1:30 PM – 3:00 PM
Tu 3C: Spin and Transport Room: MultiCultural Center Theater
Session Chair: Mark Sherwin, University of California, Santa Barbara, USA
1:30 Tu-3C.1
Spin Logic and Spin Communications (Invited)
Hanan Dery, Yang Song, Pengke Li, University of Rochester, USA; Igor Zutic, State
University of New York, USA
2:00 Tu-3C.2
Effect of Gate Dielectric on Transport Properties of InSb Two-Dimensional
Electron Gas
M. M. Uddin, Y. Hirayama, Tohoku University, Japan; K. F. Yang, K. Nagase, ERATO
Nuclear Spin Electrsonics Project, Japan; H. W. Liu, Jilin University, People’s Republic
of China; T. D. Mishima, M. B. Santos, University of Oklahoma, USA
2:15 Tu-3C.3
High-Order Sideband Generation from Electron-Hole Recollisions
B. Zaks, H. Banks, M. S. Sherwin, University of California, Santa Barbara, USA; R. B.
Liu, The Chinese University of Hong Kong, China
2:30 Tu-3C.4
Electronic Transport Properties in Vertically Coupled Quantum Point Contacts
S. Ichinokura, W. Izumida, Y. Hirayama, Tohoku University, Japan; T. Hatano, K.
Nagase, JST-ERATO, Japan
2:45 Tu-3C.5
Boundary-Enhanced Momentum Relaxation of Longitudinal Optical Phonons in
GaN - CANCELLED
N. Ma, B. Shen, L. W. Lu, F. J. Xu, L. Guo, X. Q. Wang, F. Lin, Peking University,
China; Z. H. Feng, S. B. Dun, B. Liu, Hebei Semiconductor Research Institute, China
3:00 PM – 3:30 PM Coffee Break in Lagoon Plaza
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Tuesday Aug. 28
1:30 PM – 3:00 PM
Tu 3D - Lasers I Room: University Center Harbor Room
Session Chair: Keith Williams, Naval Research Laboratory, USA
1:30 Tu-3D.1
Ultralow-power Nanophotonic Devices Based on Buried-Heterostructure Photonic-
Crystal Nanocavities (Invited)
Masaya Notomi, NTT
2:00 Tu-3D.2
Metal-Clad Photonic Crystal Membrane Nanolasers
Joshua D. Sulkin and Kent D. Choquette, Department of Electrical and Computer
Engineering University of Illinois, Urbana, IL, USA
2:15 Tu-3D.3
10-Gbit/s Direct Modulation of Optically Pumped InGaAlAs Multiple-Quantum-
Well Photonic-Crystal Nanocavity Laser up to 100C
T. Sato, K. Takeda, H. Imai, A. Shinya, K. Nozaki, H. Taniyama, K. Hasebe, W.
Kobayashi, T. Kakitsuka, M. Notomi, and S. Matsuo, NTT Photonics Labs, NTT
Corporation, Japan
2:30 Tu-3D.4
Multi-Stack Quantum Cascade Laser (Invited)
Romain Blanchard, Harvard University
3:00 PM – 3:30 PM Coffee Break in Lagoon Plaza
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Tuesday Aug. 28
1:30 PM – 3:00 PM
Tu 3E - III-V MOS Room: University Center State Street Room
Session Chair: Erik Lind, Lund University, Sweden
1:30 Tu-3E.1
Design of High-Current L-Valley GaAs/AlAs0.56Sb0.44/InP (111)Ultra-Thin-Body
nMOSFETs
S. Mehrotra, M. Povolotskyi, J. Law, T. Kubis, G. Klimeck, and M. Rodwelly, Network
for Computational Nanotechnology, Purdue University, West Lafayette, IN, USA
1:45 Tu-3E.2
High Performance Substitutional-Gate MOSFETs Using MBE Source-Drain
Regrowth and Scaled Gate Oxides
S. Lee, A. D. Carter, J. J. M. Law, D. C. Elias, V. Chobpattana, H. Lu, B. J. Thibeault,
W. Mitchell, S. Stemmer, A. C. Gossard, and M. J. W. Rodwell, Department of Electrical
and Computer Engineering, University of California,
Santa Barbara, CA, USA
2:00 Tu-3E.3
Epitaxy of III-V based channels on Si and transistor integration for 12nm node
CMOS (Invited)
Matty Caymax, IMEC
2:30 Tu-3E.4
Novel Atomic Layer Deposited Thin Film Beryllium Oxide for InGaAs MOS
Devices
D. Koh, J. H. Yum, T. Akyol1, D. A. Ferrer, M. Lei, T. W. Hudnall, M. C. Downer, C.
W. Bielawski, R.Hill, G. Bersuker and S. K. Banerjee, Microelectronics Research Center,
Department of Electrical and Computer Engineering, The University of Texas at Austin,
Austin, Texas, USA
2:45 Tu-3E.5
Sulfur Cleaning for (100) (111)A and (111)B InGaAs Surfaces with In Content of
0.70 and their Al2O3/InGaAs MOS Interface Properties
M. Yokoyama, O. Ichikawa, H. Yamada, N. Fukuhara, M. Hata, M. Sugiyama, Y.
Nakano, M. Takenaka, and S. Takagi, The University of Tokyo, Tokyo, Japan
3:00 PM – 3:30 PM Coffee Break in Lagoon Plaza
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Tuesday Aug. 28
3:30 PM – 5:00 PM
Tu 4A - Late News Room: Corwin Pavilion
Session Chair: Diana Huffaker, University of California Los Angels, USA
Miguel Murteaga, Teledyne Scientific, Thousand Oaks, California, USA
Tuesday Aug. 28
5:00 PM – 5:45 PM
Compound Semiconductor Week Award Ceremony Room: Corwin Pavilion
The International Symposium for Compound Semiconductors will present four prestigious
awards. The awards to be made at ISCS 2012 are:
The Welker Award
The Quantum Device Award
The Young Scientist Award
The Best Student Paper Award
The Indium Phosphide and Related Materials Conference will present the IPRM 2012 Award.
Tuesday Aug. 28
5:00 PM – 6:30 PM
Exhibitor Reception Room: Lagoon Plaza
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Wednesday August 29
8:30 AM – 10:00 AM
We 1A: Alloys and Heterostructures Room: Corwin Pavilion West
Session Chair: Subhananda Chakrabarti, Indian Institute of Technology, Bombay, India
8:30 We-1A.1
Growth and Optical Properties of High Bi Content GaAsBi Alloys (Invited)
R.B. Lewis, V. Bahrami-Yekta, M. Masnadi-Shirazi, T. Tiedje, University of Victoria, Canada
9:00 We-1A.2
The Molecular Beam Epitaxial Growth-Space of InAsBi and InGaAsBi on InAs
S. J. Maddox, H. P. Nair, V. D. Dasika, E. M. Krivoy, R. Salas, S. R. Bank, The
University of Texas at Austin, USA
9:15 We-1A.3
Quantitative Structure of the GaP/Si (001) Interface Grown by MOVPE
Andreas Beyer, Benedikt Haas, Kakhaber Jandieri, Wolfgang Stolz, Kerstin Volz
Philipps-Universität Marburg, Marburg, Germany
9:30 We-1A.4
Molecular Beam Epitaxy of Dilute Nitride Solar Cells (Invited) M. Guina, A. Tukiainen, A. Aho, V. Polojarvi, V.-M. Korpijarvi, J. Salmo, Tampere
University of Technology, Finland
10:00 AM – 10:30 AM Coffee Break in Lagoon Plaza
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Wednesday August 29
8:30 AM – 10:00 AM
We 1B: Theory and Simulation Room: Corwin Pavilion East
Session Chair: Jürgen Christen, Otto-von-Guericke-University, Germany
8:30 We-1B.1
Theory of Quasi-Localized States and Resonant Scattering of Charge Carriers in
Dilute Nitride Semiconductors (Invited)
Stephen Fahy, University College Cork, Ireland
9:00 We-1B.2
An Accuate Interband Tunneling Model InAs/GaSb Heterostructure Devices
Md. Itrat Bin Shams, Yi Xie, Yeqing Lu, Patrick Fay, University of Notre Dame, USA
9:15 We-1B.3
GaN/AlN QDs: Modeling Exciton-Biexciton Crossover and Strong Polar Exciton-
LO Phonon Interaction
G. Hönig, J. Settke, G. Callsen, J. Brunnmeier, A. Hoffmann, C. Thomsen, A. Schliwa,
Technschische Universität Berlin, Germany
9:30 We-1B.4
Systematic Theoretical Investigations for the Polytypism in SiC
Tomonori Ito, Toru Akiyama, Kohji Nakamura, Mie University, Japan
9:45 We-1B.5
Modeling of Sb-Heterostructure Backward Diode for Millimeter- and
Submillimeter-Wave Detection
Parisa Yadranjee Aghdam, Huan Zhao, Chalmers University of Technology, Sweden
10:00 AM – 10:30 AM Coffee Break in Lagoon Plaza
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Wednesday August 29
8:30 AM – 10:00 AM
We 1C: Sensors: Noise and Bandwidth Room: MultiCultural Theater
Session Chair: Pradeep Senanayake, University of California, Los Angeles
8:30 We-1C.1
Development of Very Low Noise High Gain InAs Avalanche Photodiodes (Invited)
J. P. R. David, C. H. Tan, University of Sheffield, UK
9:00 We-1C.2
Exploiting the Characteristics of InAs Electron Avalanche Photodiodes for
Unlimited Gain-Bandwidth Product
Pin Jern Ker, A. B. Krysa, John P. R. David, Chee Hing Tan, University of Sheffield,
UK; Andrew R. J. Marshall, Lancaster University, UK
9:15 We-1C.3
MOVPE Grown Photodiodes in the 2.5 μm Region with InGaAs/GaAsSb Type-II
Quantum Wells
K. Fujii, T. Ishizuka, Y. Nagai, Y.Iguchi, K. Akita, Sumitomo Electric Industries, Ltd.,
Japan
9:30 We-1C.4
Noise Characterization of Mid-Infrared InAs/GaSb Superlattice Photodiodes
A. Wörl, P. Kleinow, R. Rehma, J. Schmitz, M. Walther, Fraunhofer-Institut für
Angewandte Festkörperphysik (IAF), Germany
9:45 We-1C.5
High Bandwidth GaSb Photodiodes for 1.55 μm Communications on GaAs
Substrates Using an Interfacial Misfit Array A. R. J. Marshall, A. P. Craig, Lancaster University, UK; C. J. Reyner, G. Mariani, K.L.
Wang, University of California, Los Angeles, USA; K. Nunna, B. L. Liang, D. L.
Huffaker, California NanoSystems Institute, Los Angeles, USA
10:00 AM – 10:30 AM Coffee Break in Lagoon Plaza
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Wednesday Aug. 29
8:30 AM – 10:00 AM
We 1D - QD Lasers and Technology Room: University Center Harbor Room
Session Chair: Ikou Suemune, Hokkaido University, Japan
8:30 We-1D.1
Recent Advances in High-Speed Lasers and Amplifiers Based on 1.5 um QD/QDash
Material (Invited)
J.P. Reithmaier, University of Kassel
9:00 We-1D.2
1550nm InAs/InP Quantum Dash Based Directly Modulated Lasers for Next
Generation Passive Optical Network
N. Chimot, S. Joshi, G. Aubin, K. Merghem, S. Barbet, A. Accard, A. Ramdane and F.
Lelarge, III-V Lab, a joint Laboratory of "Alcatel Lucent Bell Labs", "Thales Research &
Technology" and CEALETI, Marcoussis, France
9:15 We-1D.3
20 GHz to 83 GHz Single Section InAs/InP Quantum Dot Mode-Locked Lasers
Grown on (001) Misoriented Substrate
K. Klaime, R. Piron, C. Paranthoen, T. Batte, F. Grillot, O. Dehaese, S. Loualiche, A. Le
Corre, R. Rosales, K. Merghem, A. Martinez and A. Ramdane, UEB INSA-RENNES,
CNRS UMR6082 Foton, France
9:30 We-1D.4
InAs/InP Quantum Dash Based Mode Locked Lasers for 60 GHz Radio over Fiber
Applications
R. Rosales, B. Charbonnier, K. Merghem, F. Van Dijk, F. Lelarge, A. Martinez & A.
Ramdane, CNRS, Laboratory for Photonics and Nanostructures, Marcoussis, France
9:45 We-1D.5
MOVPE Growth of Ga(AsBi)/GaAs Quantum Well Structures
P. Ludewig, N. Knaub, W. Stolz, K. Volz, Philipps-Universität Marburg, Materials
Science Center and Faculty of Physics, Marburg, Germany
10:00 AM – 10:30 AM Coffee Break in Lagoon Plaza
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Wednesday Aug. 29
8:30 AM – 10:00 AM
We 1E - HBTs Room: University Center State Street Room
Session Chair: Tom Low, Agilent Technologies, USA
8:30 We-1E.1
InP HBT with 55-nm-wide Emitter and Relationship between Emitter Width and
Current Density
K. Tanaka, and Y. Miyamoto, Department of Physical Electronics, Tokyo Institute of
Technology, Tokyo, Japan
8:45 We-1E.2
InP/GaInAs DHBT with TiW Emitter Demonstrating fT/fmax ~340/400GHz for 100
Gb/s Circuit Applications
V. Nodjiadjim, S. Cros-Chahrour, J-Y. Dupuy, M. Riet, P. Berdaguer, J-L Gentner, B.
Saturnin, J. Godin, III-V Lab (Bell Labs, TRT and CEA/LETI joint Lab), Marcoussis,
France
9:00 We-1E.3
Lower Limits to Specific Contact Resistivity
A. Baraskar, A. C. Gossard, M. J. W. Rodwell, Global Foundries, Yorktown Heights,
NY, USA
9:15 We-1E.4
Study of the NiGaInAs Alloy as an Ohmic Contact to the p-type Base of InP/GaInAs
HBTs
Shlomo Mehari, Technion - Israel Institute of Technology, Haifa, Israel
9:30 We-1E.5
Multi-finger 250nm InP HBTs for 220GHz mm-Wave Power
Z. Griffith, M. Urteaga, P. Rowell, R. Pierson, and M. Field
Teledyne Scientific Company, Thousand Oaks, CA, USA
9:45 We-1E.6
Analysis of InP/GaAsSb DHBT Failure Mechanisms Under Accelerated Aging Tests
G.A. Koné, C. Maneux, N. Labat, T. Zimmer, B. Grandchamp and H. Maher, IMS,
Université Bordeaux 1, Talence, France
10:00 AM – 10:30 AM Coffee Break in Lagoon Plaza
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Wednesday August 29
10:30 AM – 12:00 PM
We 2A: Modulators and Resonators Room: Corwin Pavilion West
Session Chair: François Lelarge, Alcatel - Thales III-V Lab, Marcoussis, France
10:30 We-2A.1
Intradot Dynamics of InAs/GaAs Quantum Dot Based Electroabsorbers (Invited)
Guillaume Huyet, Tyndall National Institute, Ireland
11:00 We-2A.2
Parametric Mode-Mixing in Structurally-Coupled Mechanical Resonators
Hiroshi Yamaguchi, Hajime Okamoto, Imran Mahboob, Nippon Telegraph and
Telephone Corporation, Japan
11:15 We-2A.3
Ultra-broadband Wavelength Tuning Range of Quantum Dot Comb Laser
Fabricated Using Structure Modulation Growth Technique
Yuki Yoshioka, Naokatsu Yamamoto, Kouichi Akahane, Tetsuya Kawanishi, National
Institute of Information and Communications Technology (NICT), Japan; Hiroshi Takai,
Tokyo Denki University, Japan; Hideyuki Sotobayashi, Aoyama Gakuin University,
Japan
11:30 We-2A.4
Self-Pulsating Multi-Section InGaN Laser Diode
L. Sulmoni, J.-M. Lamy, J.-F. Carlin, N. Grandjean, Ecole Polytechnique Fédérale de
Lausanne (EPFL), ICMP, Switzerland; X. Zeng, D. L. Boïko, Centre Suisse
d’Electronique et de Microtechnique (CSEM) SA, Switzerland
11:45 We-2A.5
Electro-Optic Modulators by Using Spatially-Ordered InGaAs Quantum Dot
Chains
Baolai Liang, Wei Liu, Harold Fetterman, Diana Huffaker, University of California, Los
Angeles, USA
12:00 PM – 1:30 PM Lunch Break in Storke Plaza
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Wednesday August 29
10:30 AM – 12:00 PM
We 2B: Characterization I Room: Corwin Pavilion East
Session Chair: Matteo Meneghini, University of Padova, Italy
10:30 We-2B.1
Comparison of GaAs/GaSb(001) and GaSb/GaAs(001) Nanostructures at the
Atomic Scale (Invited)
A. Lenz, H. Eisele, J. Schuppang, M. Dähne , Technschische Universität Berlin,
Germany; A. Gassenq, T. Talierco, E. Tournié, Université Montpellier 2, France
11:00 We-2B.2
Spatio-Time-Resolved Cathodoluminescence Study Using a Femtosecond Focused
Electron Beam on Freestanding GaN Substrates Grown by Hydride Vapor Phase
Epitaxy
S. F. Chichibu, Y. Ishikawa, M. Tashiro, K. Hazu, K. Furusawa, Tohoku University,
Japan; S. Nagao, K. Fujito, Mitsubishi Chemical Corporation, Japan; A. Uedono,
University of Tsukuba, Japan
11:15 We-2B.3
Cathodoluminescence Investigations of Single GaN Quantum Dots Directly
Performed in a Scanning Transmission Electron Microscope
F. Bertram, G. Schmidt, M. Müller, P. Veit, J. Christen, Otto-von-Guericke-University
Magdeburg, Germany; E. Monroy, CEA-Grenoble, France
11:30 We-2B.4
Growth Process and Morphology of Three-Dimensional GaSb Islands on Ga/Si(111)
Shinsuke Hara, Ryuto Machida, Keisuke Yoshiki, Katsumi Irokawa, Hirofumi Miki,
Hiroki I. Fujishiro, Tokyo University of Science, Japan; Akira Kawazu, Tokyo Denki
University, Japan
11:45 We-2B.5
Characterization Individual Near Surface N-Atoms in Diluted Ga(As,N) by Cross-
Sectional Scanning Tunneling Microscopy
V. Vossebuerger, K. Jandieri, W. Stolz, K. Volz, Philipps University Marburg, Germany;
A. Lenz, H. Eisele, Technschische Universität Berlin, Germany
12:00 PM – 1:30 PM Lunch Break in Storke Plaza
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Wednesday August 29
10:30 AM – 12:00 PM
We 2C: Quantum Effects in Nanostructures Room: MultiCultural Theater
Session Chair: Yoshiro Hirayama, Tohoku University, Sendai, Japan
10:30 We-2C.1
Room-Temperature Polariton Parametric Scattering Driven by Polariton
Condensate in a One-Dimensional ZnO Microcavity (Invited)
Wei Xie, Hongxing Dong, Saifeng Zhang, Liaoxin Sun, Zhanghai Chen, Fudan
University, China
11:00 We-2C.2
General Photon Autocorrelation Function Including Carrier Repopulation Process
in Single-Photon Emitters
Hideaki Nakajima, Hidekazu Kumano, Ikuo Suemune, Hokkaido University, Japan
11:15 We-2C.3
Engineering Surface Plasmon Absorption for High Efficiency Nanopillar
Photodetectors Pradeep Senanayake, Chung-Hong Hung, Joshua Shapiro, Andrew Lin, Baolai Liang,
Benjamin S. Williams, D. L. Huffaker, University of California, Los Angeles, USA
11:30 We-2C.4
Single Photon Emission and Detection with Quantum Dots in Nanowire Devices
Gabriele Bulgarini, Michael E. Reimer, Erik P.A.M. Bakkers, Leo P. Kouwenhoven, Val
Zwiller, Delft University of Technology, The Netherlands
11:45 We-2C.5
Plasmonic Nanolaser Using Epitaxially Grown Silver Film
Yu-Jung Lu, Hung-Ying Chen, Chun-Yuan Wang, Ming-Yen Lu, Juann Chen, Shangjr
Gwo, National Tsing-Hua University, Taiwan; Jisun Kim, Chihhui Wu, Nima Dabidian,
Charlotte E. Sanders, Lih- Gennady Shvets, Chih-Kang Shih, The University of Texas at
Austin, USA; Bo-Hong Li, Xianggang Qiu, Chinese Academy of Sciences, China; Wen-
Hao Chang, National Chiao-Tung University, Taiwan
12:00 PM – 1:30 PM Lunch Break in Storke Plaza
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Wednesday Aug. 29
10:30 AM – 12:00 PM
We 2D - Photodiodes Room: University Center Harbor Room
Session Chair: Andreas Beling, University of Virginia, USA
10:30 We-2D.1
Microwave Photonics (Invited)
Keith Williams, NRL
11:00 We-2D.2
Lateral Scalability of Inverted p-down InAlAs/InGaAs Avalanche Photodiode
M. Nada, H. Yokoyama, Y. Muramoto, T. Ishibashi and S. Kodama, NTT Photonics
Laboratories, NTT Corporation 3-1, Atsugi City, Japan
11:15 We-2D.3
Phase Characterization of Intermodulation Distortion in High-Linearity
Photodiodes
Y. Fu, H. Pan, A. Beling, J. Campbell, Department of Electrical Engineering, University
of Virginia, Charlottesville, VA, USA
11:30 We-2D.4
High speed AlInGaAs Quantum Well Waveguide Photodiode for Wavelengths
Around 2 microns
H. Yang, N. Ye, A. Gocalinska, M. Manganaro, K. Thomas, E. Pelucchi, B. Roycroft, F.
Peters and B. Corbett, Tyndall National Institute, Cork, Ireland
11:45 We-2D.5
MOCVD Based Zinc Diffusion Process for Planar InP/InGaAs Avalanche
Photodiode Fabrication
Oliver J. Pitts, National Research Council Canada, Ottawa, Ontario, Canada
12:00 PM – 1:30 PM Lunch Break in Storke Plaza
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Wednesday Aug. 29
10:30 AM – 12:00 PM
We 2E- HEMT Technologies Room: University Center State Street Room
Session Chair: Gerry Mei, Northrup Grumman, USA
10:30 We-2E.1
450 GHz Amplifier MMIC in 50 nm Metamorphic HEMT Technology
A. Leuther, A. Tessmann, H. Massler, R. Aidam, M. Schlechtweg, O. Ambacher,
Fraunhofer Institute for Applied Solid State Physics (IAF), Freiburg, Germany
10:45 We-2E.2
100nm-Gate InAlAs/InGaAs HEMTs on Plastic Flexible Substrate with High Cut-
Off Frequencies
Jinshan. Shi, N. Wichmann, Y. Roelens and S. Bollaert, Institute of Electronics,
Microelectronics and Nanotechnology Technology, University of Lille, Villeneuve
d’Ascq, France
11:00 We-2E.3
High Electron Mobility InAs-Based Heterostructure on Exact (001) Si Using
GaSb/GaP Accommodation Layer
L. Desplanque, S. El Kazzi, C. Coinon, S. Ziegler , B. Kunert, A. Beyer, K. Volz, W.
Stolz, Y.Wang, P.Ruterana and X.Wallart, Institute of Electronics, Microelectronics and
Nanottechnology, CNRS and University of Lille, Villeneuve d’Ascq, France
11:15 We-2E.4
Analysis of Performances of InSb HEMTs Using Quantum-Corrected Monte Carlo
Simulation
J. Sato, Y. Nagai, S. Hara, H. I. Fujishiro, A. Endoh, and I. Watanabe, Tokyo University
of Science, Chiba, Japan
11:30 We-2E.5
Optimized InP HEMTs for Low Noise at Cryogenic Temperatures
Helena Rodilla, Chalmers University of Technology, Goteborg, Sweden
11:45 We-2E.6
Metal-Organic Vapor-Phase Epitaxy Growth of InP-Based HEMT Structures with
InGaAs/InAs Composite Channel
H. Sugiyama, T. Hoshi, H. Yokoyama and H. Matsuzaki, NTT Photonics Laboratories,
NTT Corporation, Kanagawa, Japan
12:00 PM – 1:30 PM Lunch Break in Storke Plaza
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Wednesday Aug. 29
1:30 PM – 5:30 PM
Santa Barbara Wine Tour Excursion Departs from the Manzanita Village Bus Loop at 1:30PM.
Wednesday Aug. 29
5:30 PM – 7:30 PM
Goleta Beach Barbeque
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Thursday August 30
8:30 AM – 10:00 AM
Th 1A: Sources Room: Corwin Pavilion West
Session Chair: Paul Simmons, University of California, Los Angeles
8:30 Th-1A.1
Overcoming Limiting Factors in Blue VCSEL Technology (Invited)
Cosendey, A. Castiglia, J.-F. Carlin, R. Butté, N. Grandjean, EPFL, Switzerland
9:00 Th-1A.2
Study of Transient Responses of InGaAs Quantum-Dot Microdisk Lasers under
Optical Excitation M.-H. Mao, Y. C. Shen, H. C. Chien, C.Y. Cheng, P. C. Lin, National Taiwan University,
Taiwan
9:15 Th-1A.3
High Temperature, Single Mode, Continuous Wave Operation of Electrically-
Pumped Monolithic GaSb VCSELs D. Sanchez, L. Cerutti, E. Tournié, University of Montpellier, France
9:30 Th-1A.4
Ridge Waveguide InGaN/GaN Quantum Dot Edge Emitting Visible Lasers
Animesh Banerjee, Thomas Frost, Pallab Bhattacharya, University of Michigan, USA
9:45 Th-1A.5
Optical Polarization Characteristics on Semipolar (30-31) and (30-3-1) InGaN/GaN
Light-Emitting Diodes
Yuji Zhao, Qimin Yan, Daniel Feezell, Steven P. DenBaars, James S. Speck, C. G. Van
de Walle, Shuji Nakamura, University of California, Santa Barbara, USA; Kenji Fujito,
Mitsubishi Chemical Co., Japan
10:00 AM – 10:30 AM Coffee Break in Lagoon Plaza
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Thursday August 30
8:30 AM – 10:00 AM
Th 1B: Characterization II Room: Corwin Pavilion East
Session Chair: Holger Eisele, Technical University, Berlin, Germany
8:30 Th-1B.1
Nano-scale Characterization of Nitrides using Helium Temperature Scanning
Transmission Electron Microscopy Cathodoluminescence (Invited)
Jürgen Christen, Otto-von-Guericke-University, Germany
9:00 Th-1B.2
Surface Studies of InAs Nanowires M. Hjort, S. Lehmann, J. Knutsson, R. Timm, E. Lundgren, K. Deppert, L. Samuelson,
K.A. Dick, A. Mikkelsen, Lund University, Sweden
9:15 Th-1B.3
Polarization Dependent Photocurrent Spectroscopy for Identification of Quantum
Confined Interband Transitions in Type-II InAs/GaSb Superlattices Nutan Gautam, A.V. Barve, S. Krishna, University of New Mexico, USA
9:30 Th-1B.4
An Atomic Scale Comparison of Trimethylaluminum Nucleation on InGaAs (4x2)
vs. (2x4) Surfaces
T. Kent, W. Melitz, A Kummel, University of California, San Diego, USA; R. Droopad,
Texas State University, USA
9:45 Th-1B.5
Cathodoluminescence Microscopy of InGaN Nano-Structures on Self-Organized
GaN Pyramids
G. Schmidt, F. Bertram, S. Metzner, M. Müller, P. Veit, J. Christen, Otto-von-Guericke-
University Magdeburg, Germany; M. Jetter, C. Wächter, P. Michler, Stuttgart University,
Germany
10:00 AM – 10:30 AM Coffee Break in Lagoon Plaza
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Thursday August 30
8:30 AM – 10:00 AM
Th 1C: Electronics Room: MultiCultural Theater
Session Chair: Mark Rodwell, University of California, Santa Barbara, USA
8:30 Th-1C.1
InAlN/AlN/GaN HEMTs Low-Voltage State-of-the-Art X-band Power
Performances (Invited)
Paul Saunier, Hua-Quen Tserng, Andrew Ketterson, Michael Schuette, Triquint
Semiconductor Inc., USA; Xiang Gao, Shiping Guo, IQE RF LLC, USA
9:00 Th-1C.2
InGaAs/InP DHBTs with Emitter and Base Defined through Electron-Beam
Lithography for Reduced Ccb and Increased RF Cut-off Frequency Evan Lobisser, Johann C. Rode, Vibhor Jain, Han-Wei Chiang, Ashish Baraskar, William
J. Mitchell, Brian J. Thibeault, Mark J. W. Rodwell, University of California, Santa
Barbara, USA; M. Urteaga, Teledyne Scientific & Imaging, USA; D. Loubychev, A.
Snyder, Y. Wu, J. M. Fastenau, A. W. K. Liu, IQE Inc., USA
9:15 Th-1C.3
InAs Hot Electron Transistors with Cutoff Frequency above 200 GHz H. Nguyen van, A.N. Baranov, R. Teissier, Institut d’Electronique du Sud, France; M.
aknoune, Institut d’Electronique de Microélectronique et de Nanotechnologie, France
9:30 Th-1C.4
317 GHz InAlGaN/GaN HEMTs with Extremely Low On-Resistance
Dong Seup Lee, Tomás Palacios, Massachusetts Institute of Technology, USA; Oleg
Laboutin, Yu Cao, Wayne Johnson, Kopin Corporation, Taunton, USA; Edward Beam,
Andrew Ketterson, Michael Schuette, Paul Saunier, Triquint Semiconductor Inc., USA;
David Kopp, Patrick Fay, University of Notre Dame, USA
9:45 Th-1C.5
N-Polar GaN/InAlN/AlGaN MIS-HEMTs with Highly Scaled GaN Channels
D. Denninghoff, J. Lu, E. Ahmadi, S. Keller, U. K. Mishra, University of California,
Santa Barbara, USA
10:00 AM – 10:30 AM Coffee Break in Lagoon Plaza
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Thursday Aug. 30
8:30 AM – 10:00 AM
Th 1D- Nanowires and Quantum Dots Room: University Center Harbor Room
Session Chair:
8:30 Th-1D.1
Selective-area Growth InP-based Nanowires and Their Optical Properties (Invited)
Junichi Motohisa, Hokkaido University
9:00 Th-1D.2
Single GaAs Nanowire Photovoltaic Devices under Very High Power Illumination
A. Lysov, C. Gutsche, W. Prost, F.-J. Tegude, Center for Nanointegration, University of
Duisburg-Essen, Duisburg, Germany
9:15 Th-1D.3
Radial InP/InAsP Quantum Wells with High Arsenic Compositions on Wurtzite-InP
Nanowires in the 1.3-µm Region
K. Kawaguchi, Y. Nakata, M. Ekawa, T. Yamamoto, and Y. Arakawa, Fujitsu
Laboratories Ltd., Atsugi, Japan
9:30 Th-1D.4
Site-controlled Growth of InP/InGaP Quantum Dots
V. Baumann, F. Stumpf, S. Kremling, T. Steinl, A. Forchel, C. Schneider, S. Höfling, and
M. Kamp, Technische Physik, Physikalisches Institut and Wilhelm Conrad Röntgen
Research Center for Comple Material Systems, Universit t W rzburg, W rzburg,
Germany
9:45 Th-1D.5
Catalyst Design for Native Oxide Based Selective Area InP Nanowire Growth
Yonatan Calahorra, EE faculty, Technion, Haifa, Israel
10:00 AM – 10:30 AM Coffee Break in Lagoon Plaza
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Thursday August 30
10:30 AM – 12:00 PM
Th 2A: Nanoheterostructures Room: Corwin Pavilion East
Session Chair: Baolai Liang, University of California, Los Angeles, USA
10:30 Th-2A.1
Coherent manipulation of three-spin states in a GaAs/AlGaAs triple dot device
(Invited)
Sergei Studenikin, G. Aers, G. Granger, L. Gaudreau, A. Kam, P. Zawadzki, Z. R.
Wasilewski, A. Sachrajda, National Research Council Canada, Canada
11:00 Th-2A.2
Random Behavior in Stimulated Emission of Regularly Arranged InGaN/GaN
MQW Nanocolumns
Shunsuke Ishizawa, Sophia University, Japan; Katsumi Kishino, Sophia Nanotechnology
Research Center, Japan
11:15 Th-2A.3
Plastic Strain Relaxation in Axial (In,Ga)N/GaNNanorodHeterostructures
X. Kong, A. Trampert, Paul-Drude-InstitutfürFestkörperelektronik, Germany; S. Albert,
A. Bengoechea-Encabo, M. A. Sanchez-Garcia, E. Calleja, Ciudad Universitaria,Spain;
M. Mandl, M. Binder, B. Galler, M. Strassburg,OSRAM Opto Semiconductors GmbH,
Germany
11:30 Th-2A.4
Improving Electron Mobility of InAs Quantum Well High Electron Mobility
Transistors Grown on Si Substrates by a GaAs/GaAsSb Step-Graded Buffer Layer
Pei-Chin Chiu, Han-Chieh Ho, Yu-Ming Hsin, Jen-Inn Chyi, Sheng-Wei Lee, National
Central University, Taiwan
11:45 Th-2A.5
Intersubband Absorption and Photocurrent Response in Non-Polar III-Nitrides
Multi-Quantum Well Structures
E. Gross, A. Vardi, A. Pesach, G. Bahir, Technion-Israel Institute of Technology, Israel;
C-Y. Huang, Y-D. Lin, S. Nakamura, University of California Santa Barbara, Santa
Barbara, USA; S. E. Schacham, Ariel University Center, Israel
12:00 PM – 1:30 PM Lunch Break
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Thursday August 30
10:30 AM – 12:00 PM
Th 2B: III-N Characterization Room: Corwin Pavilion East
Session Chair: Andrea Lenz, Technical University, Berlin, Germany
10:30 Th-2B.1
Reverse-Bias Degradation of AlGaN/GaN Vertical Schottky Diodes: An
Investigation Based on Electrical and Capacitive Measurements (Invited)
M. Meneghini, M. Bertin, G. Dal Santo, A. Stocco, D. Bisi, G. Meneghesso, E. Zanoni,
University of Padova, Italy; D. Marcon, P. E. Malinowski, IMEC, Belgium; A. Chini,
University of Modena and Reggio Emilia, Italy
11:00 Th-2B.2
Stress Relaxation in Semipolar AlGaN/GaN Heterostructures
Erin C. Young, F. Wu, D. Haeger, A. Romanov, D. Cohen, J.S. Speck, University of
California, Santa Barbara, USA
11:15 Th-2B.3
Extraction of Conduction Band Offsets and Interface Charges on Polar Non-Polar
and Semi-Polar GaN/AlGaN Heterostructures through Capacitance-Voltage
Profiling
C. A. Hurni, U. K. Mishra, J. S. Speck, University of California, Santa Barbara, USA
11:30 Th-2B.4
The Strain-Modulated Hole Concentration Enhancement in p-Type
Al0.15Ga0.85N/GaN Superlattices via AlN Interlayers
Lei Li, Ding Li, Lei Liu, Weihua Chen, Zhijian Yang, Xiaodong Hu, Peking University,
China
11:45 Th-2B.5
Characterization of Polar AlN/GaN Interfaces Using Atom Probe Tomography
B. Mazumder, M. H. Wong, C.A. Hurni, U.K. Mishra, J. S. Speck, University of
California, Santa Barbara, USA
12:00 PM – 1:30 PM Lunch Break
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Thursday Aug. 30
10:30 AM – 12:00 AM
Th 2C- Lasers II Room: MultiCultural Theater
Session Chair:
10:30 Th-2C.1
High Speed VCSELS for Optical Interconnects (Invited)
Anders Larsson, Chalmers University
11:00 Th-2C.2
Slotted Tunable Laser with Monolithic Integrated Mode Coupler
James R. O'Callaghan, Tyndall Nation Institute, Cork, Munster, Ireland
11:15 Th-2C.3
C-band Operation of Lateral-grating-assisted Lateral Co-directional Coupler
Tunable Laser with High-mesa Buried Hetero-structure
Takanori Suzuki, Central Research Laboratory, Hitachi Ltd., Kokubunji-shi, Tokyo,
Japan
11:30 Th-2C.4
Multiple Coherent Outputs from Single Growth Monolithically Integrated Injection
Locked Tunable Lasers
Padraic Morrissey, Tyndall Nation Institute, Cork, Munster, Ireland
11:45 Th-2C.5
Low-Threshold Operation of LCI-Membrane-DFB Lasers with Be-doped GaInAs
Contact Layer
M. Futami, T. Shindo, K. Doi, T. Amemiya, N. Nishiyama, S. Arai, Department of
Electrical and Electronic Engineering, Tokyo Institute of Technology, Tokyo, Japan
12:00 PM – 1:30 PM Lunch Break
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EXHIBITORS
Booth Number Company Page Number
1 Wafer Technology Ltd 69
2 Aixtron 69
3 Laytec AG 69
4 IOP Publishing 70
5 Vesco-NM 70
6 LakeShore Cryotronics 70
7 Evans Analytical Group 71
8 abcr & Osaka Asahi Metal Mfg. Co., Ltd. 71, 72
9 Dockweiler Chemical 72
10 K-Space 72
11 IntelliEPI 73
12 CS CLEAN SYSTEMS 73
13 nanometrics 73
14 AXT Inc. 74
15 Vacuum Barrier Corporation 74
16 Riber Inc. 74
17 JX Nippon 75
====================================================================
The following profiles were provided by the companies/exhibitors.
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ISCS/IPRM EXHIBITORS
Booth 1: Wafer Technology LTD
Wafer Technology, a member of the IQE plc group of companies, manufactures the world's
broadest range of III-V substrates (GaAs, InP, GaSb, InSb and InAs) using both VGF and LEC
growth techniques. Material is supplied as epi-ready substrates in 2”, 3” and 4'' diameter. All
products are manufactured at the company’s Milton Keynes (U.K.) headquarters according to
ISO 9001/14001 certified processes.
http://www.wafertech.co.uk/
Booth 2: Aixtron
AIXTRON is a leading provider of deposition equipment to the semiconductor industry. The
Company's technology solutions are used by a diverse range of customers worldwide to build
advanced components for electronic and opto-electronic applications based on compound,
silicon, or organic semiconductor materials, as well as polymers, carbon nanotubes (CNT),
graphene and other nanomaterials. Such components are used in fiber optic communication
systems, wireless and mobile telephony applications, optical and electronic storage devices,
computing, signaling and lighting, as well as a range of other leading-edge technologies.
http://www.aixtron.com/
Booth 3: Laytec AG
LayTec is a major provider of in-situ and in-line optical metrology for thin-film processes. Our
integrated metrology gives direct access to all key thin-film parameters in real-time during the
film deposition. LayTec in-situ metrology systems uniquely combine optical measurement
techniques such as reflectometry, emissivity corrected pyrometry, laser deflectometry, and
reflectance anisotropy spectroscopy. The implementation of LayTec in-situ metrology systems
in MOVPE production processes significantly shortens development cycles and enables an
efficient quality control that helps to considerably reduce production and development costs.
Supported by a global distribution and service network, LayTec products are used worldwide in
leading industrial enterprises and research institutions.
http://www.laytec.de/
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Booth 4: IOP Publishing
IOP Publishing is a world leader in scientific publishing and the electronic dissemination of
physics. Our portfolio includes a number of exceptional journals, magazines and websites across
many scientific, technical and medical disciplines. We have continued this reputation for
innovation with the full digitization of our complete Journal Archive and our web products and
services for the STM community, including physicsworld.com, medicalphysicsweb.org,
nanotechweb.org and IOPscience.org.
http://www.iop.org/
Booth 5: Vesco-NM
VESCO-NM was founded in 2005 and is specialized in crystal growth reactors, MBE and
MOCVD, and semiconductor materials growth and development. Our products and services
reach the highest standards and the best performance with competitive price. VESCO-NM
fabricates many components for MBE and MOCVD that make customers success
straightforward and easy. Our products are designed to minimize problems and to achieve high
reliability under all growth conditions. VESCO-NM offers also technical support and
maintenance agreements for crystal growth reactors, characterization tools, and clean room
equipment. We also provide refurbishment, installation, operation, for MBE and MOCVD and
semiconductor fabrication tools.
http://www.vesconm.com/
Booth 6: Lakeshore Cryotronics
LakeShore Cryotronics is an international leader in precision measurement and control solutions
for scientific applications. They offer high performance tools for magnetic and electronic
transport property characterization of materials, including hi-sensitivity integrated
magnetometers and Hall effect measurement systems. The new 8400 series AC field Hall effect
measurement system now enables reliable characterization of materials with very low carrier
mobilities. Their extensive line of cryogenic probe stations enable non-destructive testing of
devices on full and partial wafers. Providing sales and support in over 40 countries, Lake Shore
is a well-respected brand in academic research, national lab, and technology industry markets.
http://www.lakeshore.com/
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Booth 7: Evans Analytical Group
EAG’s e pertise in materials characterization and microscopy of compound semiconductor
materials is second to none. Our SIMS services offer unique capabilities for the measurement of
composition, contaminants and dopants in all types of structures, from LEDs to solid state lasers
to cutting edge electronics. Furthermore, our advanced electron microscopy services (including
SEM, TEM and STEM) provide excellent imaging capabilities. With all our services, we aim to
be your primary source for fast, reliable, high quality materials characterization, helping support
your R&D, production and supply chain.
Evans Analytical Group® (EAG) is the global leader in outsourced surface analysis and
materials characterization services for compound semiconductor manufacturing. EAG has been
delivering innovative analytical services and solutions since its original founding in 1978 as
Charles Evans & Associates and now has over 20 different sites covering Europe, Asia and
North America.
http://www.eaglabs.com/
Booth 8: ABCR
abcr is an established supplier of specialty chemicals, including organo-silanes,
specialtyfluorinated organics and inorganics, catalysts, metal-organics and heterocycles.
Furthermore, we can offer the full range of high purity metals up to 7N purity in collaboration
with Osaka Asahi, Japan, and further companies. abcr currently supplies more than 80.000
compounds from catalogue up to bulk quantities and is focused on the individual needs of
semiconductor and material science orientated companies worldwide. Competent assistance by
our chemists and engineers, global sourcing activities, reliable deliveries at fair prices and
excellent quality have made abcr the “preferred supplier” for many customers.
http://www.abcr.de/
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Booth 8: Osaka Asahi Metal Mfg. Co., Ltd.
Since 1958 we have been specializing in manufacturing High Purity Metals in several levels of
purity and serving for electronics and semiconductor industry. Our current products are:
5N:Mn(new),Mg(new), Fe(new), In, Sb, Te, Al, Sn, Zn, Bi, Cd, Pb,
6N: In, Se, Sb, Zn, Cd, Te, Bi, Pb
7N Level: In, Sb, Zn, Se, Cd, Te
Metal forms: ingot, shot, chunk, rod, tapered rod
Packaging: Vacuum-seals in polyethylene-nylon film; sealed in argon atmosphere in
polyethylene-nylon film; sealed in argon atmosphere in plastic bottle; vacuum-sealed in glass
ampoule
http://www.asahimetal.co.jp/index%20english.html/
Booth 9: Dockweiler Chemicals
Dock/Chemicals is the leading MO-V producer of highest purity TBAs, TBP. Our offering also
includes highest quality CVD precursors enabling III/V on Si and low temperature epitaxial
processes by introducing novel materials. In addition to our chemicals we provide customers
with advanced equipment solutions (bubbler, delivery systems, chillers,…) to meet the technical
and commercial requirements for epitaxial processes of the future.
http://www.dockweiler-chemicals.com/
Booth 10: K-Space
Founded in 1992, k-Space Associates is a leading supplier of advanced instrumentation and
software for the surface science and thin-film technology industry. k-Space sets the standard for
analytical RHEED with the kSA400. kSA MOS yields in-situ curvature, stress, and strain while
our kSA MOS Ultra-Scan and Thermal-Scan provides full two-dimensional stress mapping of
samples from RT up to 1200 degrees C. kSA RateRat monitors real-time deposition rate and
optical constants via laser reflectivity. Our kSA BandiT, for monitoring substrate wafer
temperature during film growth, now provides Blackbody temperature capability below 200
degrees C!
http://www.k-space.com/
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Booth 11: Intelliepi
Intelligent Epitaxy Technology, Inc. (IntelliEPI), a leading "Pure Play" epi supplier of GaAs,
InP, and GaSb based epi wafers for electronic/optoelectronic industries. Products include
HEMT, HBT, Laser, photodetector, and III/V on Si. Capabilities include Sb-based materials.
http://www.intelliepi.com/
Booth 12: CS Clean Systems
CS CLEAN SYSTEMS stands for safe abatement of MOCVD gases and provides:
· Waste gas treatment for MOCVD research and manufacturing
· Safe, dry chemical conversion of toxic gases to stable solids
· Proprietary CLEANSORB media specially developed for high PH3 gas flows
· Backup column for 100% uptime
· Local refill service worldwide
· No handling of toxic waste
· Newly-developed chemisorber for SiGe and III-V-Si applications
The company’s eco-friendly CLEANSORB technology safely removes hazardous waste gases
without consuming energy, water or fuel. It is the most elegant and environmentally friendly
purification technology of exhaust gas abatement.
http://www.cscleansystems.com/
Booth 13: Nanometrics
Nanometrics is a leading provider of advanced process control systems and solutions used
primarily in the characterization of silicon and compound semiconductors, including
photoluminescence, carrier concentration profiling, defect inspection, hall measurement and
analysis of various other film properties. Nanometrics’ automated and integrated systems address
numerous applications in high-brightness LEDs, data storage devices, photovoltaics and basic
materials research. The company maintains its headquarters in Milpitas, California, with sales
and service offices worldwide.
http://www.nanometrics.com/
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Booth 15: AXT Inc.
AXT, Inc. manufactures and distributes compound and single element compound semiconductor
substrates (Gallium Arsenide, Indium Phosphide and Germanium). It offers semi-insulating and
semiconducting substrates. In addition, the company, through its joint ventures, manufactures
and sells gallium, arsenic, germanium, germanium dioxide, and pyrolytic boron nitride crucibles.
http://www.axt.com/
Booth 16: Vacuum Barrier Corporation
VACUUM BARRIER CORPORATION is the industry leader in the design and fabrication of
liquid nitrogen piping systems. We have provided both static and dynamic vacuum-jacketed
flexible piping and modular components from our own factory since 1958. Closed-Loop LN2
piping systems for Molecular Beam Epitaxy are engineered to be safe, reliable, and interface
with all MBE production and research tools.
http://www.vacuumbarrier.com/
Booth 17: Riber Inc.
RIBER is the leading supplier of Molecular Beam Epitaxy products and related services for the
compound semiconductor industry. RIBER delivers MBE machines and components worldwide
to major Universities, Material Science Institutes, Compound Semiconductor foundries or
epiwafer merchant suppliers. RIBER is indisputably the world leader in the field. Riber designs
and produces Molecular Beam Epitaxy (MBE) systems as well as evaporation sources and cells
for the semiconductor industry. This high-tech equipment is essential for the manufacturing of
compound semiconductor materials and new materials that are used in numerous consumer
applications, from new information technologies to OLED flat screens and new generation solar
cells.
http://www.riber.com/
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Booth 18: JX Nippon
Compound Semiconductor Materials division of JX Nippon Mining & Metals produces high
quality substrates including InP, CdZnTe, and ZnTe under the brand name ACROTEC.
Additional products include high purity metals: In, Cd, Te, and various others.
http://www.nikkometals.com/index.html
Technical Co-Sponsor:
IEEE
IEEE is the world’s largest professional association dedicated to advancing technological
innovation and excellence for the benefit of humanity. IEEE and its members inspire a global
community through IEEE's highly cited publications, conferences, technology standards, and
professional and educational activities.
http://www.IEEE.org/
Financial Sponsor:
Staib Instruments
STAIB designs and manufactures high performance, reliable instruments for in situ material
analysis and Multi-technique Surface Analysis Chambers: Electron Guns for analytical surface
studies-flood, microfocus, general purpose, low energy, nano-focus; RHEED systems to study
structure, film quality in UHV & high pressure; CMA energy spectrometers (Auger, SAM, XPS,
and UPS)for analytical surface studies; SEM using our micro-focus guns; Photo-Electron
Emission Microscopes-PEEM; ESCA;X-ray Sources.
http://www.staibinstruments.com/