Charge Multiplication - a Solution towards Radiation-Hard ... · a Solution towards Radiation...

Charge Multiplication -

a Solution towards Radiation-Hard

Silicon Detectors

Joumlrn Lange University of Hamburg

Erice 2406 - 03072013

Joumlrn Lange Erice 2013 Charge Multiplication in Highly-Irradiated Si Sensors 2

Results of my PhD thesis

Differential Top-Quark-Pair Cross Sections

Standard-model precision measurement

See poster

Radiation-Hard Silicon Detectors

RampD for high-luminosity upgrade of LHC (~2022)

This talk (fitting to Erice 2013 title bdquoNext Steps for LHCldquo)

Introduction

Design

RampD

Construction Commissioning

Calibration Running Particle-Phys

Analysis

EPJ C73 (2013) 2339 arXiv12112220

pTtop


The Future ndash High Luminosity LHC

Upgrade LHC HL-LHC (2022)

Instant luminosity 1034 cm-2s-1 5-10 x 1034 cm-2s-1

Int luminosity 500 fb-1 3000 fb-1

Fluence Feq(r=4cm) 3 x 1015 cm-2 ~ 1016 cm-2

Severe radiation damage of tracker (Si pixel and strip) expected

Tracker - heart of the experiments

pT charge ID vertexing for PU mitigation and b-tagging

Key ingredients of every particle-physics analysis

Needs to survive radiation-hard detectors

Higher occupancy Higher pile-up Higher radiation

Innermost pixel layer


Basics of Si Detectors

Signal-to-Noise Ratio (SNR) figure of merit Determines detection efficiency and resolution (for non-binary hit reco)

ADeffNNN

p+ implant

n-type bulk

with effective doping concentration depletion width and full depletion voltage Udep

electric field distribution

Reverse-biased p+-n diode depleted space-charge region = sensitive detector volume


Radiation Damage

Degradation of signal-to-noise ratio

Most limiting factor at HL-LHC fluences

Higher noise

Higher leakage current


Charge Multiplication ndash a Solution towards Radiation Hardness

before irradiation

Signal loss (trapping)

Charge-Collection Efficiency

deposited

measured

Q

QCCE



CCEgt1 Charge multiplication (CM) trapping overcompensated

In EPI diodes strip detectors

before irradiation



deposited

measured

Q

QCCE





CM well-known in gas APD SiPM - But novel effect in irradiated Si tracking sensors

Does radiation damage heal itself Can CM be used for HL-LHC detectors

Are there detrimental side effects (higher noise instability)

Detailed understanding of the formation and properties of CM in irradiated sensors needed

before irradiation



deposited

measured

Q

QCCE


Investigated Devices

Epitaxial (EPI) Si on thick insensitive substrate

Thin 75 100 150 microm (cf 300 microm now)

High oxygen concentration

24 GeV proton irradiation (CERN PS) to Feq=1016 cm-2

relevant for HL-LHC innermost pixel layer

25 mm or 5 mm

Pad Diodes Unsegmented test structures


Experimental Methods

Charge Collection for Different Radiation

Radiation creates free charge carriers

670 830 1060 nm laser

aparticles (58 MeV 244Cm source)

b particles (90Sr source MIP-like)

Their drift induces signal current

Measure collected charge

Charge Collection Efficiency

by normalising to unirradiated diode CCE = QQ0

dttIQ )(

n p+

Laserab -

+

n+

El field

Setup for diodes


Charge Multiplication and Electric Field

Impact ionisation (avalanche)

Needs high electric field

At low fields only e multiplication

1016 cm-2 high Neff (Udep=750 V)

Unirradiated low Neff (Udep=150 V)

0 n p+ n+ d

U = 900 V dEdx ~ Neff

ae 1016 cm-2

ah 1016 cm-2

Diode

Ionisation coefficient


Localisation of the CM Region

Smaller penetration depth stronger CM

Thin CM region located at the front side

Pen

etra

tion

dep

th

0

|E|

CM

e h

h e

670 nm

1060 nm

n p+ n+

d

all e multiplied

only small fraction multiplied

670 nm

1060 nm

830 nm

a particles

a Particles + 12 microm absorber


EPI-ST 75 microm 1016 cm-2





Pen

etra

tion

dep

th

0

|E|

CM

e h

h e

670 nm

1060 nm

n p+ n+

d

all e multiplied


670 nm

1060 nm

830 nm

a particles








Pen

etra

tion

dep

th

0

|E|

CM

e h

h e

670 nm

1060 nm

n p+ n+

d

all e multiplied


670 nm

1060 nm

830 nm

a particles








Pen

etra

tion

dep

th

0

|E|

CM

e h

h e

670 nm

1060 nm

n p+ n+

d

all e multiplied


670 nm

1060 nm

830 nm

a particles





Uniformity

x-y-scan with focussed 660 nm laser very uniform

Stability

Repeated measurements over days stable in time

Properties of Charge Multiplication

x

y

Example 800V

Proportionality

Proportional mode (not Geiger mode)

700 V

500 V

300 V

900 V



Collected Charge for b particles at 1016 cm-2

Q0 (75 microm)

Q0 (100 microm)

Depends on thickness and oxygen

concentration

For all materialsthicknesses after HL-LHC

target fluence for innermost pixel layer

Mean gt 9 ke (~ MPV gt 7 ke) at high voltages

Mean 5 - 8 ke (~ MPV 4 ndash 6 ke ) at 600 V

~ 2x readout threshold of

current pixel detectors (2 ndash 3 ke)


Noise

1

MshotshotFM

1

MIMI

1

MMQQ

before irradiation

Nois

e [

e]

U [V]

excess noise factor (stat fluctuations in multiplication)

Pad Diodes

Strong noise increase already at low voltages (6 ndash 50 ke at 600 V) Depends on device (materialgeometry) operation conditions and setup


Noise

1

MshotshotFM

1

MIMI

1

MMQQ

before irradiation

Nois

e [

e]

U [V]


Pad Diodes


From pad diodes to pixels smaller area ApixelApad ~ 11700

lower current (I A)

lower shot

(naively by factor 140

130 ndash 300 e at 600 V

excluding two highest)

keeping readout threshold (2 ndash 3 ke)

seems possible

has to be studied with real

pixels and readout chip


Conclusions

Properties of charge multiplication in proton-irradiated EPI diodes investigated

Thin CM region at the front side

Proportional uniform stable

High signals at HL-LHC fluences possible

Impact on noise and SNR depends on conditions (readout device operation)

Outlook

Can noise increase be controlled or tolerated in segmented detectors

Charge multiplication hot topic

Numerous studies on classical irradiated devices

New research field tracking devices with enhanced CM junction engineering thin ultrafast Si detectors low-gain avalanche detectors low-resistivity 3D detectors

More research needs to be done Promising prospects for radiation-hard Si detectors

NIM A 622 (2010) 49 NIM A 624 (2010) 405 PoS Vertex 2010 025


THANK YOU


BACKUP SLIDES


CMS Detector

2-Layer Trigger Level 1 + HLT reduces data rate 4020 MHz 100-300 Hz


Fluence vs Radius

S Muumlller PhD thesis

Mainly charged hadrons at inner radii (mostly 100-500 MeV pions eq ~ to 800 MeV p)

Mainly neutrons backscattered from calo at outer layers


Signal Formation

Ramo-Shockley Theorem (general)

Ramo-Shockley Theorem (pad)

Trapping


Noise and CM

Chynoweth parametrisation

Gain for electron injection at 0

Noise contributions

Excess Noise Factor

(e injection)


Radiation Damage

before irradiation shallow donors

after irradiation + (deep) defects

EC

EV

ED EC

EV

ED

Etr

A Junkes

Minimum energy transferred to Si atom needed for a) Frenkel-Pair (Interstitial-Vacancy) 25 eV b) Cluster 5 keV


Idea Damage of different particles and energies can be compared using energy going into displacement damage

Displacement-damage cross section

Fluence typically scaled to equivalent fluence of mono-chromatic neutrons of 1 MeV with same NIEL

NIEL

Prob for generation of PKA with recoil energy ER by particle with E

Lindhardt partition function portion of energy for displacement damage

Sum over all possible reactions


Trapping


Depletion Voltage (from CV at 10 kHz)rlm

Annealing curve

Stable Damage

CVIV measurable up to 4x1015 cm-2

at room temperature

Annealing curve at 80degC (isothermal) no type inversion

Stable Damage (8 min at 80degC) first donor removal then donor introduction with gC(DO)gtgC(ST)rlm


Depletion Voltagerlm

Pintilie et al NIM A 611 (2009) 52

ST FZ EPI-DO


TCT Setup (Hamburg)

Laser repetition rate 50 Hz (Multi-channel TCT scan 1 kHz spot size 20 microm)


CCE 670 nm laser (Different Fluences)


Localisation

of the CM Region



Pen

etra

tion

dep

th

)dx (E(x))exp(M

d

x 0

e

a


CCE Dependence on Annealing

In the CM regime

Maximum of CCE at 8 min

CCE annealing curve shows the same

behaviour as the one of Udep Neff

higher Neff higher Emax higher CM


CCE Dependence on Temperature

In the CM regime

Decreases with decreasing temperature

Opposite naive expectation due to T dependence of ionisation coefficient

Change of laser light absorption length not a large effect

Does electric field change with T (eg less current) -gt see simulation of field

Simulation E Verbitskaya


MIP-like b particles

Charge-sensitive preamplifier (Ortec 142B)

+ shaper (25 ns shaping time)

Scintillator

high-purity trigger

signals with SNRlt1 measurable

T ~ -29degC

~5000 signals recorded with oscilloscope

Most Probable Value (MPV) not

determinable for highly-irradiated diodes (Landau-Gauss fit failed due to high noise)

Mean still determinable for low

Signal-to-Noise Ratio (SNR)

Collected Charge with 90Sr Beta Setup (Ljubljana)

Oscilloscope

G Kramberger


n-EPI-ST 150 microm unirr 333 V

90Sr Beta Setup

(Ljubljana)

MPV

Mean

37 MBq source Sr-gtY half life 29 a Emax=05 MeV Y half life 29 d Emax=23 MeV Triggered only on high-energetic part (30-50 Hz) Calibrated with Am241 595 keV gamma


Collected Charge with 90Sr b-Setup

At least 2500 single waveforms taken

Most Probable Value (MPV) determined by Landau-

Gauss fit to spectrum

not possible for highly-irradiated diodes due to noise

Mean determined by averaging waveforms also for

low Signal-to-Noise Ratio (SNR) possible

well-defined without truncations

MPVMean 075 ndash 085

Trapping + CM at high fluences and voltages

Unirradiated diodes

Collected charge proportional to thickness

Slightly higher than MPVPDG=73 e-hmicrom

residual difference MIP - b

Noise 2000-3300 e (pad diodes) depending

on size thickness

80 e-hmicrom

97 e-hmicrom


Mean Charge for Different Fluences

Charge multiplication at high fluences

and voltages


MPV Charge for Different Fluences

Landau-Gauss fit to spectrum not

possible at high voltages (too high

noise)


Charge for Different Materials

and Thicknesses at Highest Fluence

Q0 (75 microm)

Q0 (100 microm)

Q(75microm)gtQ(100microm)gtQ(150microm)

due to higher E-field and weighting

field in thin diodes

less trapping effects more CM

Q(DO)ltQ(ST) below the CM regime

Q(DO)gtQ(ST) in the CM regime

due to higher donor introduction

rate in DO

smaller depleted region at low

voltages higher Emaxhigher CM

For all materialsthicknesses

Mean gt 9 ke (~ MPV gt 7 ke)

possible at high voltages

Mean 5 - 8 ke (~ MPV 4 ndash 6 ke )

at 600 V

670 nm laser



Q0 (75 microm)

Q0 (100 microm)


higher E EW in thin diodes



higher donor introduction rate in DO

higher Emax higher CM







|E|

ST

Neff (DO) gt Neff (ST)

x

DO

x

|E| 75 microm

150 microm d

EW

1


Current and Noise

CM expected to increase signal current and noise

Current and noise increase strongly

Larger for thinner diodes

Larger for DO

Same material and thickness dependence as signal

22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

1

MMQQ

b-setup


Current and Noise

Noise not proportional to sqrt(I)

but approximately to I

-gt no bdquoclassicalldquo but multiplied shot noise

22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

Much flatter


TCT Noise at 1016 cm-2

22)(noiseshottotal

M

1

MshotshotFM

1

MIMI

1

MMQQ

TCT

Higher intrinsic noise lsquonoise

Increase only for Ugt650 V

Nois

e [

e]

before irradiation


670 nm

1060 nm

U [V]

Depends on setup device and operation excess noise factor

EPI-ST 75 microm 1016 cm-2 Q0 = 18x106 e

670 nm

1060 nm

TCT

SNR continuously improves

900 V

900 V

22

1

)(noiseshot

M

total M

MQQSNR


Width of Charge Spectrum

Fluctuations due to CM might increase

spectrum width

Statistical fluctuations in CM process

Fluctuations in amount of Q deposited in CM region

Laser no fluctuations in CM process

a particles varying Q deposition in CM region

b particles no signif increase (but high noise)

22

noisemeasspsp

EPI-ST 100 microm

EPI-ST 75 microm

b setup



unirr

CCE1


spectrum width

No significant increase of noise-corrected

relative width with voltage

no significant impact of CM fluctuations


Charge Multiplication in Segmented Sensors

I Mandić NIM A 603 (2009) 263 M Koumlhler NIM A 659 (2011) 272

n-in-p strips 3D


Joumlrn Lange ndash Charge Collection in Si detectors 50

10 June 2009 Wildbad Kreuth

TCT electron signals (n-type)

a) measured Imeas b) trapping-corrected Icorr=Imeasexp((t-t0)teff)

Measurements

30min at 80degC anneal

performed at 20degC

670nm laser (front)

e-signal in n-type

No type inversion

(confirms conclusions from

annealing curve)rlm

Double Junction


Charge Correction Method

Idea Charge in unirradiated diode does not depend on voltage (always full charge) Correct until voltage-independent Q(U) curve found (slope 0) Assumption teff= const (same for all depths and U)


Results from


Relies on trapping correction

of time-resolved TCT signal

(670nm)

Icorr = Imeasexp((t-t0)teff)

Also in Epi

If assumed to be constant at

each fluence trapping

probability found to be

fluence-proportional

Damage parameter b

similar values as in FZ

Determination of teff

cfrlmGKrambergerlsquosrlmPhDrlmthesis

n-type

be [10-16 cm2ns-1]

p-type

bh [10-16 cm2ns-1]

EPI-ST 53 plusmn 04 74 plusmn 09

EPI-DO 45 plusmn 05

EPI comb 50 plusmn 03 74 plusmn 09

cf FZ 51 65

eqhe

heeff

Fbt

1


Comparison Simulation Measured data

Simulation with const teff underestimates measured data (even if vdr=vsat assumed everywhere vdr(E)- and E(x) model uncertainties are not the reason)

Possible Reasons avalanche effects (only at high U F) field-enhanced detrapping non-const teff (variable cross section non-const occupation eg due to trap filling at high Irev)

First try voltage-dependent teff good fits possible cf LBeattie NIM A 421 (1999) 502

n-type a


Results of my PhD thesis

Differential Top-Quark-Pair Cross Sections

Standard-model precision measurement

See poster

Radiation-Hard Silicon Detectors

RampD for high-luminosity upgrade of LHC (~2022)

This talk (fitting to Erice 2013 title bdquoNext Steps for LHCldquo)

Introduction

Design

RampD

Construction Commissioning

Calibration Running Particle-Phys

Analysis

EPJ C73 (2013) 2339 arXiv12112220

pTtop

















ADeffNNN

p+ implant

n-type bulk





Radiation Damage



Higher noise




before irradiation



deposited

measured

Q

QCCE





before irradiation



deposited

measured

Q

QCCE









before irradiation



deposited

measured

Q

QCCE








25 mm or 5 mm






670 830 1060 nm laser







dttIQ )(

n p+

Laserab -

+

n+

El field

Setup for diodes








0 n p+ n+ d


ae 1016 cm-2

ah 1016 cm-2

Diode






Pen

etra

tion

dep

th

0

|E|

CM

e h

h e

670 nm

1060 nm

n p+ n+

d

all e multiplied


670 nm

1060 nm

830 nm

a particles








Pen

etra

tion

dep

th

0

|E|

CM

e h

h e

670 nm

1060 nm

n p+ n+

d

all e multiplied


670 nm

1060 nm

830 nm

a particles








Pen

etra

tion

dep

th

0

|E|

CM

e h

h e

670 nm

1060 nm

n p+ n+

d

all e multiplied


670 nm

1060 nm

830 nm

a particles








Pen

etra

tion

dep

th

0

|E|

CM

e h

h e

670 nm

1060 nm

n p+ n+

d

all e multiplied


670 nm

1060 nm

830 nm

a particles





Uniformity


Stability



x

y

Example 800V

Proportionality


700 V

500 V

300 V

900 V




Q0 (75 microm)

Q0 (100 microm)


concentration








Noise

1

MshotshotFM

1

MIMI

1

MMQQ

before irradiation

Nois

e [

e]

U [V]


Pad Diodes



Noise

1

MshotshotFM

1

MIMI

1

MMQQ

before irradiation

Nois

e [

e]

U [V]


Pad Diodes



lower current (I A)

lower shot


130 ndash 300 e at 600 V



seems possible




Conclusions






Outlook








THANK YOU


BACKUP SLIDES


CMS Detector



Fluence vs Radius





Signal Formation



Trapping


Noise and CM



Noise contributions

Excess Noise Factor

(e injection)


Radiation Damage



EC

EV

ED EC

EV

ED

Etr

A Junkes






NIEL





Trapping



Annealing curve

Stable Damage


at room temperature






ST FZ EPI-DO


TCT Setup (Hamburg)





Localisation

of the CM Region



Pen

etra

tion

dep

th

)dx (E(x))exp(M

d

x 0

e

a



In the CM regime







In the CM regime










Scintillator

high-purity trigger


T ~ -29degC







Oscilloscope

G Kramberger



90Sr Beta Setup

(Ljubljana)

MPV

Mean













Unirradiated diodes





on size thickness

80 e-hmicrom

97 e-hmicrom




and voltages





noise)




Q0 (75 microm)

Q0 (100 microm)








rate in DO







at 600 V

670 nm laser



Q0 (75 microm)

Q0 (100 microm)













|E|

ST


x

DO

x

|E| 75 microm

150 microm d

EW

1


Current and Noise




Larger for DO


22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

1

MMQQ

b-setup


Current and Noise




22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

Much flatter



22)(noiseshottotal

M

1

MshotshotFM

1

MIMI

1

MMQQ

TCT



Nois

e [

e]

before irradiation


670 nm

1060 nm

U [V]



670 nm

1060 nm

TCT


900 V

900 V

22

1

)(noiseshot

M

total M

MQQSNR




spectrum width






22

noisemeasspsp

EPI-ST 100 microm

EPI-ST 75 microm

b setup



unirr

CCE1


spectrum width







n-in-p strips 3D






Measurements


performed at 20degC

670nm laser (front)

e-signal in n-type

No type inversion


annealing curve)rlm

Double Junction





Results from




(670nm)


Also in Epi





Damage parameter b




n-type

be [10-16 cm2ns-1]

p-type

bh [10-16 cm2ns-1]


EPI-DO 45 plusmn 05


cf FZ 51 65

eqhe

heeff

Fbt

1






n-type a

















ADeffNNN

p+ implant

n-type bulk





Radiation Damage



Higher noise




before irradiation



deposited

measured

Q

QCCE





before irradiation



deposited

measured

Q

QCCE









before irradiation



deposited

measured

Q

QCCE








25 mm or 5 mm






670 830 1060 nm laser







dttIQ )(

n p+

Laserab -

+

n+

El field

Setup for diodes








0 n p+ n+ d


ae 1016 cm-2

ah 1016 cm-2

Diode






Pen

etra

tion

dep

th

0

|E|

CM

e h

h e

670 nm

1060 nm

n p+ n+

d

all e multiplied


670 nm

1060 nm

830 nm

a particles








Pen

etra

tion

dep

th

0

|E|

CM

e h

h e

670 nm

1060 nm

n p+ n+

d

all e multiplied


670 nm

1060 nm

830 nm

a particles








Pen

etra

tion

dep

th

0

|E|

CM

e h

h e

670 nm

1060 nm

n p+ n+

d

all e multiplied


670 nm

1060 nm

830 nm

a particles








Pen

etra

tion

dep

th

0

|E|

CM

e h

h e

670 nm

1060 nm

n p+ n+

d

all e multiplied


670 nm

1060 nm

830 nm

a particles





Uniformity


Stability



x

y

Example 800V

Proportionality


700 V

500 V

300 V

900 V




Q0 (75 microm)

Q0 (100 microm)


concentration








Noise

1

MshotshotFM

1

MIMI

1

MMQQ

before irradiation

Nois

e [

e]

U [V]


Pad Diodes



Noise

1

MshotshotFM

1

MIMI

1

MMQQ

before irradiation

Nois

e [

e]

U [V]


Pad Diodes



lower current (I A)

lower shot


130 ndash 300 e at 600 V



seems possible




Conclusions






Outlook








THANK YOU


BACKUP SLIDES


CMS Detector



Fluence vs Radius





Signal Formation



Trapping


Noise and CM



Noise contributions

Excess Noise Factor

(e injection)


Radiation Damage



EC

EV

ED EC

EV

ED

Etr

A Junkes






NIEL





Trapping



Annealing curve

Stable Damage


at room temperature






ST FZ EPI-DO


TCT Setup (Hamburg)





Localisation

of the CM Region



Pen

etra

tion

dep

th

)dx (E(x))exp(M

d

x 0

e

a



In the CM regime







In the CM regime










Scintillator

high-purity trigger


T ~ -29degC







Oscilloscope

G Kramberger



90Sr Beta Setup

(Ljubljana)

MPV

Mean













Unirradiated diodes





on size thickness

80 e-hmicrom

97 e-hmicrom




and voltages





noise)




Q0 (75 microm)

Q0 (100 microm)








rate in DO







at 600 V

670 nm laser



Q0 (75 microm)

Q0 (100 microm)













|E|

ST


x

DO

x

|E| 75 microm

150 microm d

EW

1


Current and Noise




Larger for DO


22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

1

MMQQ

b-setup


Current and Noise




22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

Much flatter



22)(noiseshottotal

M

1

MshotshotFM

1

MIMI

1

MMQQ

TCT



Nois

e [

e]

before irradiation


670 nm

1060 nm

U [V]



670 nm

1060 nm

TCT


900 V

900 V

22

1

)(noiseshot

M

total M

MQQSNR




spectrum width






22

noisemeasspsp

EPI-ST 100 microm

EPI-ST 75 microm

b setup



unirr

CCE1


spectrum width







n-in-p strips 3D






Measurements


performed at 20degC

670nm laser (front)

e-signal in n-type

No type inversion


annealing curve)rlm

Double Junction





Results from




(670nm)


Also in Epi





Damage parameter b




n-type

be [10-16 cm2ns-1]

p-type

bh [10-16 cm2ns-1]


EPI-DO 45 plusmn 05


cf FZ 51 65

eqhe

heeff

Fbt

1






n-type a


Radiation Damage



Higher noise




before irradiation



deposited

measured

Q

QCCE





before irradiation



deposited

measured

Q

QCCE









before irradiation



deposited

measured

Q

QCCE








25 mm or 5 mm






670 830 1060 nm laser







dttIQ )(

n p+

Laserab -

+

n+

El field

Setup for diodes








0 n p+ n+ d


ae 1016 cm-2

ah 1016 cm-2

Diode






Pen

etra

tion

dep

th

0

|E|

CM

e h

h e

670 nm

1060 nm

n p+ n+

d

all e multiplied


670 nm

1060 nm

830 nm

a particles








Pen

etra

tion

dep

th

0

|E|

CM

e h

h e

670 nm

1060 nm

n p+ n+

d

all e multiplied


670 nm

1060 nm

830 nm

a particles








Pen

etra

tion

dep

th

0

|E|

CM

e h

h e

670 nm

1060 nm

n p+ n+

d

all e multiplied


670 nm

1060 nm

830 nm

a particles








Pen

etra

tion

dep

th

0

|E|

CM

e h

h e

670 nm

1060 nm

n p+ n+

d

all e multiplied


670 nm

1060 nm

830 nm

a particles





Uniformity


Stability



x

y

Example 800V

Proportionality


700 V

500 V

300 V

900 V




Q0 (75 microm)

Q0 (100 microm)


concentration








Noise

1

MshotshotFM

1

MIMI

1

MMQQ

before irradiation

Nois

e [

e]

U [V]


Pad Diodes



Noise

1

MshotshotFM

1

MIMI

1

MMQQ

before irradiation

Nois

e [

e]

U [V]


Pad Diodes



lower current (I A)

lower shot


130 ndash 300 e at 600 V



seems possible




Conclusions






Outlook








THANK YOU


BACKUP SLIDES


CMS Detector



Fluence vs Radius





Signal Formation



Trapping


Noise and CM



Noise contributions

Excess Noise Factor

(e injection)


Radiation Damage



EC

EV

ED EC

EV

ED

Etr

A Junkes






NIEL





Trapping



Annealing curve

Stable Damage


at room temperature






ST FZ EPI-DO


TCT Setup (Hamburg)





Localisation

of the CM Region



Pen

etra

tion

dep

th

)dx (E(x))exp(M

d

x 0

e

a



In the CM regime







In the CM regime










Scintillator

high-purity trigger


T ~ -29degC







Oscilloscope

G Kramberger



90Sr Beta Setup

(Ljubljana)

MPV

Mean













Unirradiated diodes





on size thickness

80 e-hmicrom

97 e-hmicrom




and voltages





noise)




Q0 (75 microm)

Q0 (100 microm)








rate in DO







at 600 V

670 nm laser



Q0 (75 microm)

Q0 (100 microm)













|E|

ST


x

DO

x

|E| 75 microm

150 microm d

EW

1


Current and Noise




Larger for DO


22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

1

MMQQ

b-setup


Current and Noise




22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

Much flatter



22)(noiseshottotal

M

1

MshotshotFM

1

MIMI

1

MMQQ

TCT



Nois

e [

e]

before irradiation


670 nm

1060 nm

U [V]



670 nm

1060 nm

TCT


900 V

900 V

22

1

)(noiseshot

M

total M

MQQSNR




spectrum width






22

noisemeasspsp

EPI-ST 100 microm

EPI-ST 75 microm

b setup



unirr

CCE1


spectrum width







n-in-p strips 3D






Measurements


performed at 20degC

670nm laser (front)

e-signal in n-type

No type inversion


annealing curve)rlm

Double Junction





Results from




(670nm)


Also in Epi





Damage parameter b




n-type

be [10-16 cm2ns-1]

p-type

bh [10-16 cm2ns-1]


EPI-DO 45 plusmn 05


cf FZ 51 65

eqhe

heeff

Fbt

1






n-type a



before irradiation



deposited

measured

Q

QCCE





before irradiation



deposited

measured

Q

QCCE









before irradiation



deposited

measured

Q

QCCE








25 mm or 5 mm






670 830 1060 nm laser







dttIQ )(

n p+

Laserab -

+

n+

El field

Setup for diodes








0 n p+ n+ d


ae 1016 cm-2

ah 1016 cm-2

Diode






Pen

etra

tion

dep

th

0

|E|

CM

e h

h e

670 nm

1060 nm

n p+ n+

d

all e multiplied


670 nm

1060 nm

830 nm

a particles








Pen

etra

tion

dep

th

0

|E|

CM

e h

h e

670 nm

1060 nm

n p+ n+

d

all e multiplied


670 nm

1060 nm

830 nm

a particles








Pen

etra

tion

dep

th

0

|E|

CM

e h

h e

670 nm

1060 nm

n p+ n+

d

all e multiplied


670 nm

1060 nm

830 nm

a particles








Pen

etra

tion

dep

th

0

|E|

CM

e h

h e

670 nm

1060 nm

n p+ n+

d

all e multiplied


670 nm

1060 nm

830 nm

a particles





Uniformity


Stability



x

y

Example 800V

Proportionality


700 V

500 V

300 V

900 V




Q0 (75 microm)

Q0 (100 microm)


concentration








Noise

1

MshotshotFM

1

MIMI

1

MMQQ

before irradiation

Nois

e [

e]

U [V]


Pad Diodes



Noise

1

MshotshotFM

1

MIMI

1

MMQQ

before irradiation

Nois

e [

e]

U [V]


Pad Diodes



lower current (I A)

lower shot


130 ndash 300 e at 600 V



seems possible




Conclusions






Outlook








THANK YOU


BACKUP SLIDES


CMS Detector



Fluence vs Radius





Signal Formation



Trapping


Noise and CM



Noise contributions

Excess Noise Factor

(e injection)


Radiation Damage



EC

EV

ED EC

EV

ED

Etr

A Junkes






NIEL





Trapping



Annealing curve

Stable Damage


at room temperature






ST FZ EPI-DO


TCT Setup (Hamburg)





Localisation

of the CM Region



Pen

etra

tion

dep

th

)dx (E(x))exp(M

d

x 0

e

a



In the CM regime







In the CM regime










Scintillator

high-purity trigger


T ~ -29degC







Oscilloscope

G Kramberger



90Sr Beta Setup

(Ljubljana)

MPV

Mean













Unirradiated diodes





on size thickness

80 e-hmicrom

97 e-hmicrom




and voltages





noise)




Q0 (75 microm)

Q0 (100 microm)








rate in DO







at 600 V

670 nm laser



Q0 (75 microm)

Q0 (100 microm)













|E|

ST


x

DO

x

|E| 75 microm

150 microm d

EW

1


Current and Noise




Larger for DO


22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

1

MMQQ

b-setup


Current and Noise




22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

Much flatter



22)(noiseshottotal

M

1

MshotshotFM

1

MIMI

1

MMQQ

TCT



Nois

e [

e]

before irradiation


670 nm

1060 nm

U [V]



670 nm

1060 nm

TCT


900 V

900 V

22

1

)(noiseshot

M

total M

MQQSNR




spectrum width






22

noisemeasspsp

EPI-ST 100 microm

EPI-ST 75 microm

b setup



unirr

CCE1


spectrum width







n-in-p strips 3D






Measurements


performed at 20degC

670nm laser (front)

e-signal in n-type

No type inversion


annealing curve)rlm

Double Junction





Results from




(670nm)


Also in Epi





Damage parameter b




n-type

be [10-16 cm2ns-1]

p-type

bh [10-16 cm2ns-1]


EPI-DO 45 plusmn 05


cf FZ 51 65

eqhe

heeff

Fbt

1






n-type a





before irradiation



deposited

measured

Q

QCCE









before irradiation



deposited

measured

Q

QCCE








25 mm or 5 mm






670 830 1060 nm laser







dttIQ )(

n p+

Laserab -

+

n+

El field

Setup for diodes








0 n p+ n+ d


ae 1016 cm-2

ah 1016 cm-2

Diode






Pen

etra

tion

dep

th

0

|E|

CM

e h

h e

670 nm

1060 nm

n p+ n+

d

all e multiplied


670 nm

1060 nm

830 nm

a particles








Pen

etra

tion

dep

th

0

|E|

CM

e h

h e

670 nm

1060 nm

n p+ n+

d

all e multiplied


670 nm

1060 nm

830 nm

a particles








Pen

etra

tion

dep

th

0

|E|

CM

e h

h e

670 nm

1060 nm

n p+ n+

d

all e multiplied


670 nm

1060 nm

830 nm

a particles








Pen

etra

tion

dep

th

0

|E|

CM

e h

h e

670 nm

1060 nm

n p+ n+

d

all e multiplied


670 nm

1060 nm

830 nm

a particles





Uniformity


Stability



x

y

Example 800V

Proportionality


700 V

500 V

300 V

900 V




Q0 (75 microm)

Q0 (100 microm)


concentration








Noise

1

MshotshotFM

1

MIMI

1

MMQQ

before irradiation

Nois

e [

e]

U [V]


Pad Diodes



Noise

1

MshotshotFM

1

MIMI

1

MMQQ

before irradiation

Nois

e [

e]

U [V]


Pad Diodes



lower current (I A)

lower shot


130 ndash 300 e at 600 V



seems possible




Conclusions






Outlook








THANK YOU


BACKUP SLIDES


CMS Detector



Fluence vs Radius





Signal Formation



Trapping


Noise and CM



Noise contributions

Excess Noise Factor

(e injection)


Radiation Damage



EC

EV

ED EC

EV

ED

Etr

A Junkes






NIEL





Trapping



Annealing curve

Stable Damage


at room temperature






ST FZ EPI-DO


TCT Setup (Hamburg)





Localisation

of the CM Region



Pen

etra

tion

dep

th

)dx (E(x))exp(M

d

x 0

e

a



In the CM regime







In the CM regime










Scintillator

high-purity trigger


T ~ -29degC







Oscilloscope

G Kramberger



90Sr Beta Setup

(Ljubljana)

MPV

Mean













Unirradiated diodes





on size thickness

80 e-hmicrom

97 e-hmicrom




and voltages





noise)




Q0 (75 microm)

Q0 (100 microm)








rate in DO







at 600 V

670 nm laser



Q0 (75 microm)

Q0 (100 microm)













|E|

ST


x

DO

x

|E| 75 microm

150 microm d

EW

1


Current and Noise




Larger for DO


22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

1

MMQQ

b-setup


Current and Noise




22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

Much flatter



22)(noiseshottotal

M

1

MshotshotFM

1

MIMI

1

MMQQ

TCT



Nois

e [

e]

before irradiation


670 nm

1060 nm

U [V]



670 nm

1060 nm

TCT


900 V

900 V

22

1

)(noiseshot

M

total M

MQQSNR




spectrum width






22

noisemeasspsp

EPI-ST 100 microm

EPI-ST 75 microm

b setup



unirr

CCE1


spectrum width







n-in-p strips 3D






Measurements


performed at 20degC

670nm laser (front)

e-signal in n-type

No type inversion


annealing curve)rlm

Double Junction





Results from




(670nm)


Also in Epi





Damage parameter b




n-type

be [10-16 cm2ns-1]

p-type

bh [10-16 cm2ns-1]


EPI-DO 45 plusmn 05


cf FZ 51 65

eqhe

heeff

Fbt

1






n-type a









before irradiation



deposited

measured

Q

QCCE








25 mm or 5 mm






670 830 1060 nm laser







dttIQ )(

n p+

Laserab -

+

n+

El field

Setup for diodes








0 n p+ n+ d


ae 1016 cm-2

ah 1016 cm-2

Diode






Pen

etra

tion

dep

th

0

|E|

CM

e h

h e

670 nm

1060 nm

n p+ n+

d

all e multiplied


670 nm

1060 nm

830 nm

a particles








Pen

etra

tion

dep

th

0

|E|

CM

e h

h e

670 nm

1060 nm

n p+ n+

d

all e multiplied


670 nm

1060 nm

830 nm

a particles








Pen

etra

tion

dep

th

0

|E|

CM

e h

h e

670 nm

1060 nm

n p+ n+

d

all e multiplied


670 nm

1060 nm

830 nm

a particles








Pen

etra

tion

dep

th

0

|E|

CM

e h

h e

670 nm

1060 nm

n p+ n+

d

all e multiplied


670 nm

1060 nm

830 nm

a particles





Uniformity


Stability



x

y

Example 800V

Proportionality


700 V

500 V

300 V

900 V




Q0 (75 microm)

Q0 (100 microm)


concentration








Noise

1

MshotshotFM

1

MIMI

1

MMQQ

before irradiation

Nois

e [

e]

U [V]


Pad Diodes



Noise

1

MshotshotFM

1

MIMI

1

MMQQ

before irradiation

Nois

e [

e]

U [V]


Pad Diodes



lower current (I A)

lower shot


130 ndash 300 e at 600 V



seems possible




Conclusions






Outlook








THANK YOU


BACKUP SLIDES


CMS Detector



Fluence vs Radius





Signal Formation



Trapping


Noise and CM



Noise contributions

Excess Noise Factor

(e injection)


Radiation Damage



EC

EV

ED EC

EV

ED

Etr

A Junkes






NIEL





Trapping



Annealing curve

Stable Damage


at room temperature






ST FZ EPI-DO


TCT Setup (Hamburg)





Localisation

of the CM Region



Pen

etra

tion

dep

th

)dx (E(x))exp(M

d

x 0

e

a



In the CM regime







In the CM regime










Scintillator

high-purity trigger


T ~ -29degC







Oscilloscope

G Kramberger



90Sr Beta Setup

(Ljubljana)

MPV

Mean













Unirradiated diodes





on size thickness

80 e-hmicrom

97 e-hmicrom




and voltages





noise)




Q0 (75 microm)

Q0 (100 microm)








rate in DO







at 600 V

670 nm laser



Q0 (75 microm)

Q0 (100 microm)













|E|

ST


x

DO

x

|E| 75 microm

150 microm d

EW

1


Current and Noise




Larger for DO


22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

1

MMQQ

b-setup


Current and Noise




22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

Much flatter



22)(noiseshottotal

M

1

MshotshotFM

1

MIMI

1

MMQQ

TCT



Nois

e [

e]

before irradiation


670 nm

1060 nm

U [V]



670 nm

1060 nm

TCT


900 V

900 V

22

1

)(noiseshot

M

total M

MQQSNR




spectrum width






22

noisemeasspsp

EPI-ST 100 microm

EPI-ST 75 microm

b setup



unirr

CCE1


spectrum width







n-in-p strips 3D






Measurements


performed at 20degC

670nm laser (front)

e-signal in n-type

No type inversion


annealing curve)rlm

Double Junction





Results from




(670nm)


Also in Epi





Damage parameter b




n-type

be [10-16 cm2ns-1]

p-type

bh [10-16 cm2ns-1]


EPI-DO 45 plusmn 05


cf FZ 51 65

eqhe

heeff

Fbt

1






n-type a








25 mm or 5 mm






670 830 1060 nm laser







dttIQ )(

n p+

Laserab -

+

n+

El field

Setup for diodes








0 n p+ n+ d


ae 1016 cm-2

ah 1016 cm-2

Diode






Pen

etra

tion

dep

th

0

|E|

CM

e h

h e

670 nm

1060 nm

n p+ n+

d

all e multiplied


670 nm

1060 nm

830 nm

a particles








Pen

etra

tion

dep

th

0

|E|

CM

e h

h e

670 nm

1060 nm

n p+ n+

d

all e multiplied


670 nm

1060 nm

830 nm

a particles








Pen

etra

tion

dep

th

0

|E|

CM

e h

h e

670 nm

1060 nm

n p+ n+

d

all e multiplied


670 nm

1060 nm

830 nm

a particles








Pen

etra

tion

dep

th

0

|E|

CM

e h

h e

670 nm

1060 nm

n p+ n+

d

all e multiplied


670 nm

1060 nm

830 nm

a particles





Uniformity


Stability



x

y

Example 800V

Proportionality


700 V

500 V

300 V

900 V




Q0 (75 microm)

Q0 (100 microm)


concentration








Noise

1

MshotshotFM

1

MIMI

1

MMQQ

before irradiation

Nois

e [

e]

U [V]


Pad Diodes



Noise

1

MshotshotFM

1

MIMI

1

MMQQ

before irradiation

Nois

e [

e]

U [V]


Pad Diodes



lower current (I A)

lower shot


130 ndash 300 e at 600 V



seems possible




Conclusions






Outlook








THANK YOU


BACKUP SLIDES


CMS Detector



Fluence vs Radius





Signal Formation



Trapping


Noise and CM



Noise contributions

Excess Noise Factor

(e injection)


Radiation Damage



EC

EV

ED EC

EV

ED

Etr

A Junkes






NIEL





Trapping



Annealing curve

Stable Damage


at room temperature






ST FZ EPI-DO


TCT Setup (Hamburg)





Localisation

of the CM Region



Pen

etra

tion

dep

th

)dx (E(x))exp(M

d

x 0

e

a



In the CM regime







In the CM regime










Scintillator

high-purity trigger


T ~ -29degC







Oscilloscope

G Kramberger



90Sr Beta Setup

(Ljubljana)

MPV

Mean













Unirradiated diodes





on size thickness

80 e-hmicrom

97 e-hmicrom




and voltages





noise)




Q0 (75 microm)

Q0 (100 microm)








rate in DO







at 600 V

670 nm laser



Q0 (75 microm)

Q0 (100 microm)













|E|

ST


x

DO

x

|E| 75 microm

150 microm d

EW

1


Current and Noise




Larger for DO


22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

1

MMQQ

b-setup


Current and Noise




22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

Much flatter



22)(noiseshottotal

M

1

MshotshotFM

1

MIMI

1

MMQQ

TCT



Nois

e [

e]

before irradiation


670 nm

1060 nm

U [V]



670 nm

1060 nm

TCT


900 V

900 V

22

1

)(noiseshot

M

total M

MQQSNR




spectrum width






22

noisemeasspsp

EPI-ST 100 microm

EPI-ST 75 microm

b setup



unirr

CCE1


spectrum width







n-in-p strips 3D






Measurements


performed at 20degC

670nm laser (front)

e-signal in n-type

No type inversion


annealing curve)rlm

Double Junction





Results from




(670nm)


Also in Epi





Damage parameter b




n-type

be [10-16 cm2ns-1]

p-type

bh [10-16 cm2ns-1]


EPI-DO 45 plusmn 05


cf FZ 51 65

eqhe

heeff

Fbt

1






n-type a





670 830 1060 nm laser







dttIQ )(

n p+

Laserab -

+

n+

El field

Setup for diodes








0 n p+ n+ d


ae 1016 cm-2

ah 1016 cm-2

Diode






Pen

etra

tion

dep

th

0

|E|

CM

e h

h e

670 nm

1060 nm

n p+ n+

d

all e multiplied


670 nm

1060 nm

830 nm

a particles








Pen

etra

tion

dep

th

0

|E|

CM

e h

h e

670 nm

1060 nm

n p+ n+

d

all e multiplied


670 nm

1060 nm

830 nm

a particles








Pen

etra

tion

dep

th

0

|E|

CM

e h

h e

670 nm

1060 nm

n p+ n+

d

all e multiplied


670 nm

1060 nm

830 nm

a particles








Pen

etra

tion

dep

th

0

|E|

CM

e h

h e

670 nm

1060 nm

n p+ n+

d

all e multiplied


670 nm

1060 nm

830 nm

a particles





Uniformity


Stability



x

y

Example 800V

Proportionality


700 V

500 V

300 V

900 V




Q0 (75 microm)

Q0 (100 microm)


concentration








Noise

1

MshotshotFM

1

MIMI

1

MMQQ

before irradiation

Nois

e [

e]

U [V]


Pad Diodes



Noise

1

MshotshotFM

1

MIMI

1

MMQQ

before irradiation

Nois

e [

e]

U [V]


Pad Diodes



lower current (I A)

lower shot


130 ndash 300 e at 600 V



seems possible




Conclusions






Outlook








THANK YOU


BACKUP SLIDES


CMS Detector



Fluence vs Radius





Signal Formation



Trapping


Noise and CM



Noise contributions

Excess Noise Factor

(e injection)


Radiation Damage



EC

EV

ED EC

EV

ED

Etr

A Junkes






NIEL





Trapping



Annealing curve

Stable Damage


at room temperature






ST FZ EPI-DO


TCT Setup (Hamburg)





Localisation

of the CM Region



Pen

etra

tion

dep

th

)dx (E(x))exp(M

d

x 0

e

a



In the CM regime







In the CM regime










Scintillator

high-purity trigger


T ~ -29degC







Oscilloscope

G Kramberger



90Sr Beta Setup

(Ljubljana)

MPV

Mean













Unirradiated diodes





on size thickness

80 e-hmicrom

97 e-hmicrom




and voltages





noise)




Q0 (75 microm)

Q0 (100 microm)








rate in DO







at 600 V

670 nm laser



Q0 (75 microm)

Q0 (100 microm)













|E|

ST


x

DO

x

|E| 75 microm

150 microm d

EW

1


Current and Noise




Larger for DO


22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

1

MMQQ

b-setup


Current and Noise




22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

Much flatter



22)(noiseshottotal

M

1

MshotshotFM

1

MIMI

1

MMQQ

TCT



Nois

e [

e]

before irradiation


670 nm

1060 nm

U [V]



670 nm

1060 nm

TCT


900 V

900 V

22

1

)(noiseshot

M

total M

MQQSNR




spectrum width






22

noisemeasspsp

EPI-ST 100 microm

EPI-ST 75 microm

b setup



unirr

CCE1


spectrum width







n-in-p strips 3D






Measurements


performed at 20degC

670nm laser (front)

e-signal in n-type

No type inversion


annealing curve)rlm

Double Junction





Results from




(670nm)


Also in Epi





Damage parameter b




n-type

be [10-16 cm2ns-1]

p-type

bh [10-16 cm2ns-1]


EPI-DO 45 plusmn 05


cf FZ 51 65

eqhe

heeff

Fbt

1






n-type a








0 n p+ n+ d


ae 1016 cm-2

ah 1016 cm-2

Diode






Pen

etra

tion

dep

th

0

|E|

CM

e h

h e

670 nm

1060 nm

n p+ n+

d

all e multiplied


670 nm

1060 nm

830 nm

a particles








Pen

etra

tion

dep

th

0

|E|

CM

e h

h e

670 nm

1060 nm

n p+ n+

d

all e multiplied


670 nm

1060 nm

830 nm

a particles








Pen

etra

tion

dep

th

0

|E|

CM

e h

h e

670 nm

1060 nm

n p+ n+

d

all e multiplied


670 nm

1060 nm

830 nm

a particles








Pen

etra

tion

dep

th

0

|E|

CM

e h

h e

670 nm

1060 nm

n p+ n+

d

all e multiplied


670 nm

1060 nm

830 nm

a particles





Uniformity


Stability



x

y

Example 800V

Proportionality


700 V

500 V

300 V

900 V




Q0 (75 microm)

Q0 (100 microm)


concentration








Noise

1

MshotshotFM

1

MIMI

1

MMQQ

before irradiation

Nois

e [

e]

U [V]


Pad Diodes



Noise

1

MshotshotFM

1

MIMI

1

MMQQ

before irradiation

Nois

e [

e]

U [V]


Pad Diodes



lower current (I A)

lower shot


130 ndash 300 e at 600 V



seems possible




Conclusions






Outlook








THANK YOU


BACKUP SLIDES


CMS Detector



Fluence vs Radius





Signal Formation



Trapping


Noise and CM



Noise contributions

Excess Noise Factor

(e injection)


Radiation Damage



EC

EV

ED EC

EV

ED

Etr

A Junkes






NIEL





Trapping



Annealing curve

Stable Damage


at room temperature






ST FZ EPI-DO


TCT Setup (Hamburg)





Localisation

of the CM Region



Pen

etra

tion

dep

th

)dx (E(x))exp(M

d

x 0

e

a



In the CM regime







In the CM regime










Scintillator

high-purity trigger


T ~ -29degC







Oscilloscope

G Kramberger



90Sr Beta Setup

(Ljubljana)

MPV

Mean













Unirradiated diodes





on size thickness

80 e-hmicrom

97 e-hmicrom




and voltages





noise)




Q0 (75 microm)

Q0 (100 microm)








rate in DO







at 600 V

670 nm laser



Q0 (75 microm)

Q0 (100 microm)













|E|

ST


x

DO

x

|E| 75 microm

150 microm d

EW

1


Current and Noise




Larger for DO


22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

1

MMQQ

b-setup


Current and Noise




22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

Much flatter



22)(noiseshottotal

M

1

MshotshotFM

1

MIMI

1

MMQQ

TCT



Nois

e [

e]

before irradiation


670 nm

1060 nm

U [V]



670 nm

1060 nm

TCT


900 V

900 V

22

1

)(noiseshot

M

total M

MQQSNR




spectrum width






22

noisemeasspsp

EPI-ST 100 microm

EPI-ST 75 microm

b setup



unirr

CCE1


spectrum width







n-in-p strips 3D






Measurements


performed at 20degC

670nm laser (front)

e-signal in n-type

No type inversion


annealing curve)rlm

Double Junction





Results from




(670nm)


Also in Epi





Damage parameter b




n-type

be [10-16 cm2ns-1]

p-type

bh [10-16 cm2ns-1]


EPI-DO 45 plusmn 05


cf FZ 51 65

eqhe

heeff

Fbt

1






n-type a





Pen

etra

tion

dep

th

0

|E|

CM

e h

h e

670 nm

1060 nm

n p+ n+

d

all e multiplied


670 nm

1060 nm

830 nm

a particles








Pen

etra

tion

dep

th

0

|E|

CM

e h

h e

670 nm

1060 nm

n p+ n+

d

all e multiplied


670 nm

1060 nm

830 nm

a particles








Pen

etra

tion

dep

th

0

|E|

CM

e h

h e

670 nm

1060 nm

n p+ n+

d

all e multiplied


670 nm

1060 nm

830 nm

a particles








Pen

etra

tion

dep

th

0

|E|

CM

e h

h e

670 nm

1060 nm

n p+ n+

d

all e multiplied


670 nm

1060 nm

830 nm

a particles





Uniformity


Stability



x

y

Example 800V

Proportionality


700 V

500 V

300 V

900 V




Q0 (75 microm)

Q0 (100 microm)


concentration








Noise

1

MshotshotFM

1

MIMI

1

MMQQ

before irradiation

Nois

e [

e]

U [V]


Pad Diodes



Noise

1

MshotshotFM

1

MIMI

1

MMQQ

before irradiation

Nois

e [

e]

U [V]


Pad Diodes



lower current (I A)

lower shot


130 ndash 300 e at 600 V



seems possible




Conclusions






Outlook








THANK YOU


BACKUP SLIDES


CMS Detector



Fluence vs Radius





Signal Formation



Trapping


Noise and CM



Noise contributions

Excess Noise Factor

(e injection)


Radiation Damage



EC

EV

ED EC

EV

ED

Etr

A Junkes






NIEL





Trapping



Annealing curve

Stable Damage


at room temperature






ST FZ EPI-DO


TCT Setup (Hamburg)





Localisation

of the CM Region



Pen

etra

tion

dep

th

)dx (E(x))exp(M

d

x 0

e

a



In the CM regime







In the CM regime










Scintillator

high-purity trigger


T ~ -29degC







Oscilloscope

G Kramberger



90Sr Beta Setup

(Ljubljana)

MPV

Mean













Unirradiated diodes





on size thickness

80 e-hmicrom

97 e-hmicrom




and voltages





noise)




Q0 (75 microm)

Q0 (100 microm)








rate in DO







at 600 V

670 nm laser



Q0 (75 microm)

Q0 (100 microm)













|E|

ST


x

DO

x

|E| 75 microm

150 microm d

EW

1


Current and Noise




Larger for DO


22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

1

MMQQ

b-setup


Current and Noise




22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

Much flatter



22)(noiseshottotal

M

1

MshotshotFM

1

MIMI

1

MMQQ

TCT



Nois

e [

e]

before irradiation


670 nm

1060 nm

U [V]



670 nm

1060 nm

TCT


900 V

900 V

22

1

)(noiseshot

M

total M

MQQSNR




spectrum width






22

noisemeasspsp

EPI-ST 100 microm

EPI-ST 75 microm

b setup



unirr

CCE1


spectrum width







n-in-p strips 3D






Measurements


performed at 20degC

670nm laser (front)

e-signal in n-type

No type inversion


annealing curve)rlm

Double Junction





Results from




(670nm)


Also in Epi





Damage parameter b




n-type

be [10-16 cm2ns-1]

p-type

bh [10-16 cm2ns-1]


EPI-DO 45 plusmn 05


cf FZ 51 65

eqhe

heeff

Fbt

1






n-type a





Pen

etra

tion

dep

th

0

|E|

CM

e h

h e

670 nm

1060 nm

n p+ n+

d

all e multiplied


670 nm

1060 nm

830 nm

a particles








Pen

etra

tion

dep

th

0

|E|

CM

e h

h e

670 nm

1060 nm

n p+ n+

d

all e multiplied


670 nm

1060 nm

830 nm

a particles








Pen

etra

tion

dep

th

0

|E|

CM

e h

h e

670 nm

1060 nm

n p+ n+

d

all e multiplied


670 nm

1060 nm

830 nm

a particles





Uniformity


Stability



x

y

Example 800V

Proportionality


700 V

500 V

300 V

900 V




Q0 (75 microm)

Q0 (100 microm)


concentration








Noise

1

MshotshotFM

1

MIMI

1

MMQQ

before irradiation

Nois

e [

e]

U [V]


Pad Diodes



Noise

1

MshotshotFM

1

MIMI

1

MMQQ

before irradiation

Nois

e [

e]

U [V]


Pad Diodes



lower current (I A)

lower shot


130 ndash 300 e at 600 V



seems possible




Conclusions






Outlook








THANK YOU


BACKUP SLIDES


CMS Detector



Fluence vs Radius





Signal Formation



Trapping


Noise and CM



Noise contributions

Excess Noise Factor

(e injection)


Radiation Damage



EC

EV

ED EC

EV

ED

Etr

A Junkes






NIEL





Trapping



Annealing curve

Stable Damage


at room temperature






ST FZ EPI-DO


TCT Setup (Hamburg)





Localisation

of the CM Region



Pen

etra

tion

dep

th

)dx (E(x))exp(M

d

x 0

e

a



In the CM regime







In the CM regime










Scintillator

high-purity trigger


T ~ -29degC







Oscilloscope

G Kramberger



90Sr Beta Setup

(Ljubljana)

MPV

Mean













Unirradiated diodes





on size thickness

80 e-hmicrom

97 e-hmicrom




and voltages





noise)




Q0 (75 microm)

Q0 (100 microm)








rate in DO







at 600 V

670 nm laser



Q0 (75 microm)

Q0 (100 microm)













|E|

ST


x

DO

x

|E| 75 microm

150 microm d

EW

1


Current and Noise




Larger for DO


22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

1

MMQQ

b-setup


Current and Noise




22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

Much flatter



22)(noiseshottotal

M

1

MshotshotFM

1

MIMI

1

MMQQ

TCT



Nois

e [

e]

before irradiation


670 nm

1060 nm

U [V]



670 nm

1060 nm

TCT


900 V

900 V

22

1

)(noiseshot

M

total M

MQQSNR




spectrum width






22

noisemeasspsp

EPI-ST 100 microm

EPI-ST 75 microm

b setup



unirr

CCE1


spectrum width







n-in-p strips 3D






Measurements


performed at 20degC

670nm laser (front)

e-signal in n-type

No type inversion


annealing curve)rlm

Double Junction





Results from




(670nm)


Also in Epi





Damage parameter b




n-type

be [10-16 cm2ns-1]

p-type

bh [10-16 cm2ns-1]


EPI-DO 45 plusmn 05


cf FZ 51 65

eqhe

heeff

Fbt

1






n-type a





Pen

etra

tion

dep

th

0

|E|

CM

e h

h e

670 nm

1060 nm

n p+ n+

d

all e multiplied


670 nm

1060 nm

830 nm

a particles








Pen

etra

tion

dep

th

0

|E|

CM

e h

h e

670 nm

1060 nm

n p+ n+

d

all e multiplied


670 nm

1060 nm

830 nm

a particles





Uniformity


Stability



x

y

Example 800V

Proportionality


700 V

500 V

300 V

900 V




Q0 (75 microm)

Q0 (100 microm)


concentration








Noise

1

MshotshotFM

1

MIMI

1

MMQQ

before irradiation

Nois

e [

e]

U [V]


Pad Diodes



Noise

1

MshotshotFM

1

MIMI

1

MMQQ

before irradiation

Nois

e [

e]

U [V]


Pad Diodes



lower current (I A)

lower shot


130 ndash 300 e at 600 V



seems possible




Conclusions






Outlook








THANK YOU


BACKUP SLIDES


CMS Detector



Fluence vs Radius





Signal Formation



Trapping


Noise and CM



Noise contributions

Excess Noise Factor

(e injection)


Radiation Damage



EC

EV

ED EC

EV

ED

Etr

A Junkes






NIEL





Trapping



Annealing curve

Stable Damage


at room temperature






ST FZ EPI-DO


TCT Setup (Hamburg)





Localisation

of the CM Region



Pen

etra

tion

dep

th

)dx (E(x))exp(M

d

x 0

e

a



In the CM regime







In the CM regime










Scintillator

high-purity trigger


T ~ -29degC







Oscilloscope

G Kramberger



90Sr Beta Setup

(Ljubljana)

MPV

Mean













Unirradiated diodes





on size thickness

80 e-hmicrom

97 e-hmicrom




and voltages





noise)




Q0 (75 microm)

Q0 (100 microm)








rate in DO







at 600 V

670 nm laser



Q0 (75 microm)

Q0 (100 microm)













|E|

ST


x

DO

x

|E| 75 microm

150 microm d

EW

1


Current and Noise




Larger for DO


22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

1

MMQQ

b-setup


Current and Noise




22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

Much flatter



22)(noiseshottotal

M

1

MshotshotFM

1

MIMI

1

MMQQ

TCT



Nois

e [

e]

before irradiation


670 nm

1060 nm

U [V]



670 nm

1060 nm

TCT


900 V

900 V

22

1

)(noiseshot

M

total M

MQQSNR




spectrum width






22

noisemeasspsp

EPI-ST 100 microm

EPI-ST 75 microm

b setup



unirr

CCE1


spectrum width







n-in-p strips 3D






Measurements


performed at 20degC

670nm laser (front)

e-signal in n-type

No type inversion


annealing curve)rlm

Double Junction





Results from




(670nm)


Also in Epi





Damage parameter b




n-type

be [10-16 cm2ns-1]

p-type

bh [10-16 cm2ns-1]


EPI-DO 45 plusmn 05


cf FZ 51 65

eqhe

heeff

Fbt

1






n-type a





Pen

etra

tion

dep

th

0

|E|

CM

e h

h e

670 nm

1060 nm

n p+ n+

d

all e multiplied


670 nm

1060 nm

830 nm

a particles





Uniformity


Stability



x

y

Example 800V

Proportionality


700 V

500 V

300 V

900 V




Q0 (75 microm)

Q0 (100 microm)


concentration








Noise

1

MshotshotFM

1

MIMI

1

MMQQ

before irradiation

Nois

e [

e]

U [V]


Pad Diodes



Noise

1

MshotshotFM

1

MIMI

1

MMQQ

before irradiation

Nois

e [

e]

U [V]


Pad Diodes



lower current (I A)

lower shot


130 ndash 300 e at 600 V



seems possible




Conclusions






Outlook








THANK YOU


BACKUP SLIDES


CMS Detector



Fluence vs Radius





Signal Formation



Trapping


Noise and CM



Noise contributions

Excess Noise Factor

(e injection)


Radiation Damage



EC

EV

ED EC

EV

ED

Etr

A Junkes






NIEL





Trapping



Annealing curve

Stable Damage


at room temperature






ST FZ EPI-DO


TCT Setup (Hamburg)





Localisation

of the CM Region



Pen

etra

tion

dep

th

)dx (E(x))exp(M

d

x 0

e

a



In the CM regime







In the CM regime










Scintillator

high-purity trigger


T ~ -29degC







Oscilloscope

G Kramberger



90Sr Beta Setup

(Ljubljana)

MPV

Mean













Unirradiated diodes





on size thickness

80 e-hmicrom

97 e-hmicrom




and voltages





noise)




Q0 (75 microm)

Q0 (100 microm)








rate in DO







at 600 V

670 nm laser



Q0 (75 microm)

Q0 (100 microm)













|E|

ST


x

DO

x

|E| 75 microm

150 microm d

EW

1


Current and Noise




Larger for DO


22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

1

MMQQ

b-setup


Current and Noise




22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

Much flatter



22)(noiseshottotal

M

1

MshotshotFM

1

MIMI

1

MMQQ

TCT



Nois

e [

e]

before irradiation


670 nm

1060 nm

U [V]



670 nm

1060 nm

TCT


900 V

900 V

22

1

)(noiseshot

M

total M

MQQSNR




spectrum width






22

noisemeasspsp

EPI-ST 100 microm

EPI-ST 75 microm

b setup



unirr

CCE1


spectrum width







n-in-p strips 3D






Measurements


performed at 20degC

670nm laser (front)

e-signal in n-type

No type inversion


annealing curve)rlm

Double Junction





Results from




(670nm)


Also in Epi





Damage parameter b




n-type

be [10-16 cm2ns-1]

p-type

bh [10-16 cm2ns-1]


EPI-DO 45 plusmn 05


cf FZ 51 65

eqhe

heeff

Fbt

1






n-type a


Uniformity


Stability



x

y

Example 800V

Proportionality


700 V

500 V

300 V

900 V




Q0 (75 microm)

Q0 (100 microm)


concentration








Noise

1

MshotshotFM

1

MIMI

1

MMQQ

before irradiation

Nois

e [

e]

U [V]


Pad Diodes



Noise

1

MshotshotFM

1

MIMI

1

MMQQ

before irradiation

Nois

e [

e]

U [V]


Pad Diodes



lower current (I A)

lower shot


130 ndash 300 e at 600 V



seems possible




Conclusions






Outlook








THANK YOU


BACKUP SLIDES


CMS Detector



Fluence vs Radius





Signal Formation



Trapping


Noise and CM



Noise contributions

Excess Noise Factor

(e injection)


Radiation Damage



EC

EV

ED EC

EV

ED

Etr

A Junkes






NIEL





Trapping



Annealing curve

Stable Damage


at room temperature






ST FZ EPI-DO


TCT Setup (Hamburg)





Localisation

of the CM Region



Pen

etra

tion

dep

th

)dx (E(x))exp(M

d

x 0

e

a



In the CM regime







In the CM regime










Scintillator

high-purity trigger


T ~ -29degC







Oscilloscope

G Kramberger



90Sr Beta Setup

(Ljubljana)

MPV

Mean













Unirradiated diodes





on size thickness

80 e-hmicrom

97 e-hmicrom




and voltages





noise)




Q0 (75 microm)

Q0 (100 microm)








rate in DO







at 600 V

670 nm laser



Q0 (75 microm)

Q0 (100 microm)













|E|

ST


x

DO

x

|E| 75 microm

150 microm d

EW

1


Current and Noise




Larger for DO


22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

1

MMQQ

b-setup


Current and Noise




22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

Much flatter



22)(noiseshottotal

M

1

MshotshotFM

1

MIMI

1

MMQQ

TCT



Nois

e [

e]

before irradiation


670 nm

1060 nm

U [V]



670 nm

1060 nm

TCT


900 V

900 V

22

1

)(noiseshot

M

total M

MQQSNR




spectrum width






22

noisemeasspsp

EPI-ST 100 microm

EPI-ST 75 microm

b setup



unirr

CCE1


spectrum width







n-in-p strips 3D






Measurements


performed at 20degC

670nm laser (front)

e-signal in n-type

No type inversion


annealing curve)rlm

Double Junction





Results from




(670nm)


Also in Epi





Damage parameter b




n-type

be [10-16 cm2ns-1]

p-type

bh [10-16 cm2ns-1]


EPI-DO 45 plusmn 05


cf FZ 51 65

eqhe

heeff

Fbt

1






n-type a



Q0 (75 microm)

Q0 (100 microm)


concentration








Noise

1

MshotshotFM

1

MIMI

1

MMQQ

before irradiation

Nois

e [

e]

U [V]


Pad Diodes



Noise

1

MshotshotFM

1

MIMI

1

MMQQ

before irradiation

Nois

e [

e]

U [V]


Pad Diodes



lower current (I A)

lower shot


130 ndash 300 e at 600 V



seems possible




Conclusions






Outlook








THANK YOU


BACKUP SLIDES


CMS Detector



Fluence vs Radius





Signal Formation



Trapping


Noise and CM



Noise contributions

Excess Noise Factor

(e injection)


Radiation Damage



EC

EV

ED EC

EV

ED

Etr

A Junkes






NIEL





Trapping



Annealing curve

Stable Damage


at room temperature






ST FZ EPI-DO


TCT Setup (Hamburg)





Localisation

of the CM Region



Pen

etra

tion

dep

th

)dx (E(x))exp(M

d

x 0

e

a



In the CM regime







In the CM regime










Scintillator

high-purity trigger


T ~ -29degC







Oscilloscope

G Kramberger



90Sr Beta Setup

(Ljubljana)

MPV

Mean













Unirradiated diodes





on size thickness

80 e-hmicrom

97 e-hmicrom




and voltages





noise)




Q0 (75 microm)

Q0 (100 microm)








rate in DO







at 600 V

670 nm laser



Q0 (75 microm)

Q0 (100 microm)













|E|

ST


x

DO

x

|E| 75 microm

150 microm d

EW

1


Current and Noise




Larger for DO


22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

1

MMQQ

b-setup


Current and Noise




22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

Much flatter



22)(noiseshottotal

M

1

MshotshotFM

1

MIMI

1

MMQQ

TCT



Nois

e [

e]

before irradiation


670 nm

1060 nm

U [V]



670 nm

1060 nm

TCT


900 V

900 V

22

1

)(noiseshot

M

total M

MQQSNR




spectrum width






22

noisemeasspsp

EPI-ST 100 microm

EPI-ST 75 microm

b setup



unirr

CCE1


spectrum width







n-in-p strips 3D






Measurements


performed at 20degC

670nm laser (front)

e-signal in n-type

No type inversion


annealing curve)rlm

Double Junction





Results from




(670nm)


Also in Epi





Damage parameter b




n-type

be [10-16 cm2ns-1]

p-type

bh [10-16 cm2ns-1]


EPI-DO 45 plusmn 05


cf FZ 51 65

eqhe

heeff

Fbt

1






n-type a


Noise

1

MshotshotFM

1

MIMI

1

MMQQ

before irradiation

Nois

e [

e]

U [V]


Pad Diodes



Noise

1

MshotshotFM

1

MIMI

1

MMQQ

before irradiation

Nois

e [

e]

U [V]


Pad Diodes



lower current (I A)

lower shot


130 ndash 300 e at 600 V



seems possible




Conclusions






Outlook








THANK YOU


BACKUP SLIDES


CMS Detector



Fluence vs Radius





Signal Formation



Trapping


Noise and CM



Noise contributions

Excess Noise Factor

(e injection)


Radiation Damage



EC

EV

ED EC

EV

ED

Etr

A Junkes






NIEL





Trapping



Annealing curve

Stable Damage


at room temperature






ST FZ EPI-DO


TCT Setup (Hamburg)





Localisation

of the CM Region



Pen

etra

tion

dep

th

)dx (E(x))exp(M

d

x 0

e

a



In the CM regime







In the CM regime










Scintillator

high-purity trigger


T ~ -29degC







Oscilloscope

G Kramberger



90Sr Beta Setup

(Ljubljana)

MPV

Mean













Unirradiated diodes





on size thickness

80 e-hmicrom

97 e-hmicrom




and voltages





noise)




Q0 (75 microm)

Q0 (100 microm)








rate in DO







at 600 V

670 nm laser



Q0 (75 microm)

Q0 (100 microm)













|E|

ST


x

DO

x

|E| 75 microm

150 microm d

EW

1


Current and Noise




Larger for DO


22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

1

MMQQ

b-setup


Current and Noise




22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

Much flatter



22)(noiseshottotal

M

1

MshotshotFM

1

MIMI

1

MMQQ

TCT



Nois

e [

e]

before irradiation


670 nm

1060 nm

U [V]



670 nm

1060 nm

TCT


900 V

900 V

22

1

)(noiseshot

M

total M

MQQSNR




spectrum width






22

noisemeasspsp

EPI-ST 100 microm

EPI-ST 75 microm

b setup



unirr

CCE1


spectrum width







n-in-p strips 3D






Measurements


performed at 20degC

670nm laser (front)

e-signal in n-type

No type inversion


annealing curve)rlm

Double Junction





Results from




(670nm)


Also in Epi





Damage parameter b




n-type

be [10-16 cm2ns-1]

p-type

bh [10-16 cm2ns-1]


EPI-DO 45 plusmn 05


cf FZ 51 65

eqhe

heeff

Fbt

1






n-type a


Noise

1

MshotshotFM

1

MIMI

1

MMQQ

before irradiation

Nois

e [

e]

U [V]


Pad Diodes



lower current (I A)

lower shot


130 ndash 300 e at 600 V



seems possible




Conclusions






Outlook








THANK YOU


BACKUP SLIDES


CMS Detector



Fluence vs Radius





Signal Formation



Trapping


Noise and CM



Noise contributions

Excess Noise Factor

(e injection)


Radiation Damage



EC

EV

ED EC

EV

ED

Etr

A Junkes






NIEL





Trapping



Annealing curve

Stable Damage


at room temperature






ST FZ EPI-DO


TCT Setup (Hamburg)





Localisation

of the CM Region



Pen

etra

tion

dep

th

)dx (E(x))exp(M

d

x 0

e

a



In the CM regime







In the CM regime










Scintillator

high-purity trigger


T ~ -29degC







Oscilloscope

G Kramberger



90Sr Beta Setup

(Ljubljana)

MPV

Mean













Unirradiated diodes





on size thickness

80 e-hmicrom

97 e-hmicrom




and voltages





noise)




Q0 (75 microm)

Q0 (100 microm)








rate in DO







at 600 V

670 nm laser



Q0 (75 microm)

Q0 (100 microm)













|E|

ST


x

DO

x

|E| 75 microm

150 microm d

EW

1


Current and Noise




Larger for DO


22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

1

MMQQ

b-setup


Current and Noise




22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

Much flatter



22)(noiseshottotal

M

1

MshotshotFM

1

MIMI

1

MMQQ

TCT



Nois

e [

e]

before irradiation


670 nm

1060 nm

U [V]



670 nm

1060 nm

TCT


900 V

900 V

22

1

)(noiseshot

M

total M

MQQSNR




spectrum width






22

noisemeasspsp

EPI-ST 100 microm

EPI-ST 75 microm

b setup



unirr

CCE1


spectrum width







n-in-p strips 3D






Measurements


performed at 20degC

670nm laser (front)

e-signal in n-type

No type inversion


annealing curve)rlm

Double Junction





Results from




(670nm)


Also in Epi





Damage parameter b




n-type

be [10-16 cm2ns-1]

p-type

bh [10-16 cm2ns-1]


EPI-DO 45 plusmn 05


cf FZ 51 65

eqhe

heeff

Fbt

1






n-type a


Conclusions






Outlook








THANK YOU


BACKUP SLIDES


CMS Detector



Fluence vs Radius





Signal Formation



Trapping


Noise and CM



Noise contributions

Excess Noise Factor

(e injection)


Radiation Damage



EC

EV

ED EC

EV

ED

Etr

A Junkes






NIEL





Trapping



Annealing curve

Stable Damage


at room temperature






ST FZ EPI-DO


TCT Setup (Hamburg)





Localisation

of the CM Region



Pen

etra

tion

dep

th

)dx (E(x))exp(M

d

x 0

e

a



In the CM regime







In the CM regime










Scintillator

high-purity trigger


T ~ -29degC







Oscilloscope

G Kramberger



90Sr Beta Setup

(Ljubljana)

MPV

Mean













Unirradiated diodes





on size thickness

80 e-hmicrom

97 e-hmicrom




and voltages





noise)




Q0 (75 microm)

Q0 (100 microm)








rate in DO







at 600 V

670 nm laser



Q0 (75 microm)

Q0 (100 microm)













|E|

ST


x

DO

x

|E| 75 microm

150 microm d

EW

1


Current and Noise




Larger for DO


22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

1

MMQQ

b-setup


Current and Noise




22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

Much flatter



22)(noiseshottotal

M

1

MshotshotFM

1

MIMI

1

MMQQ

TCT



Nois

e [

e]

before irradiation


670 nm

1060 nm

U [V]



670 nm

1060 nm

TCT


900 V

900 V

22

1

)(noiseshot

M

total M

MQQSNR




spectrum width






22

noisemeasspsp

EPI-ST 100 microm

EPI-ST 75 microm

b setup



unirr

CCE1


spectrum width







n-in-p strips 3D






Measurements


performed at 20degC

670nm laser (front)

e-signal in n-type

No type inversion


annealing curve)rlm

Double Junction





Results from




(670nm)


Also in Epi





Damage parameter b




n-type

be [10-16 cm2ns-1]

p-type

bh [10-16 cm2ns-1]


EPI-DO 45 plusmn 05


cf FZ 51 65

eqhe

heeff

Fbt

1






n-type a


THANK YOU


BACKUP SLIDES


CMS Detector



Fluence vs Radius





Signal Formation



Trapping


Noise and CM



Noise contributions

Excess Noise Factor

(e injection)


Radiation Damage



EC

EV

ED EC

EV

ED

Etr

A Junkes






NIEL





Trapping



Annealing curve

Stable Damage


at room temperature






ST FZ EPI-DO


TCT Setup (Hamburg)





Localisation

of the CM Region



Pen

etra

tion

dep

th

)dx (E(x))exp(M

d

x 0

e

a



In the CM regime







In the CM regime










Scintillator

high-purity trigger


T ~ -29degC







Oscilloscope

G Kramberger



90Sr Beta Setup

(Ljubljana)

MPV

Mean













Unirradiated diodes





on size thickness

80 e-hmicrom

97 e-hmicrom




and voltages





noise)




Q0 (75 microm)

Q0 (100 microm)








rate in DO







at 600 V

670 nm laser



Q0 (75 microm)

Q0 (100 microm)













|E|

ST


x

DO

x

|E| 75 microm

150 microm d

EW

1


Current and Noise




Larger for DO


22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

1

MMQQ

b-setup


Current and Noise




22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

Much flatter



22)(noiseshottotal

M

1

MshotshotFM

1

MIMI

1

MMQQ

TCT



Nois

e [

e]

before irradiation


670 nm

1060 nm

U [V]



670 nm

1060 nm

TCT


900 V

900 V

22

1

)(noiseshot

M

total M

MQQSNR




spectrum width






22

noisemeasspsp

EPI-ST 100 microm

EPI-ST 75 microm

b setup



unirr

CCE1


spectrum width







n-in-p strips 3D






Measurements


performed at 20degC

670nm laser (front)

e-signal in n-type

No type inversion


annealing curve)rlm

Double Junction





Results from




(670nm)


Also in Epi





Damage parameter b




n-type

be [10-16 cm2ns-1]

p-type

bh [10-16 cm2ns-1]


EPI-DO 45 plusmn 05


cf FZ 51 65

eqhe

heeff

Fbt

1






n-type a


BACKUP SLIDES


CMS Detector



Fluence vs Radius





Signal Formation



Trapping


Noise and CM



Noise contributions

Excess Noise Factor

(e injection)


Radiation Damage



EC

EV

ED EC

EV

ED

Etr

A Junkes






NIEL





Trapping



Annealing curve

Stable Damage


at room temperature






ST FZ EPI-DO


TCT Setup (Hamburg)





Localisation

of the CM Region



Pen

etra

tion

dep

th

)dx (E(x))exp(M

d

x 0

e

a



In the CM regime







In the CM regime










Scintillator

high-purity trigger


T ~ -29degC







Oscilloscope

G Kramberger



90Sr Beta Setup

(Ljubljana)

MPV

Mean













Unirradiated diodes





on size thickness

80 e-hmicrom

97 e-hmicrom




and voltages





noise)




Q0 (75 microm)

Q0 (100 microm)








rate in DO







at 600 V

670 nm laser



Q0 (75 microm)

Q0 (100 microm)













|E|

ST


x

DO

x

|E| 75 microm

150 microm d

EW

1


Current and Noise




Larger for DO


22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

1

MMQQ

b-setup


Current and Noise




22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

Much flatter



22)(noiseshottotal

M

1

MshotshotFM

1

MIMI

1

MMQQ

TCT



Nois

e [

e]

before irradiation


670 nm

1060 nm

U [V]



670 nm

1060 nm

TCT


900 V

900 V

22

1

)(noiseshot

M

total M

MQQSNR




spectrum width






22

noisemeasspsp

EPI-ST 100 microm

EPI-ST 75 microm

b setup



unirr

CCE1


spectrum width







n-in-p strips 3D






Measurements


performed at 20degC

670nm laser (front)

e-signal in n-type

No type inversion


annealing curve)rlm

Double Junction





Results from




(670nm)


Also in Epi





Damage parameter b




n-type

be [10-16 cm2ns-1]

p-type

bh [10-16 cm2ns-1]


EPI-DO 45 plusmn 05


cf FZ 51 65

eqhe

heeff

Fbt

1






n-type a


CMS Detector



Fluence vs Radius





Signal Formation



Trapping


Noise and CM



Noise contributions

Excess Noise Factor

(e injection)


Radiation Damage



EC

EV

ED EC

EV

ED

Etr

A Junkes






NIEL





Trapping



Annealing curve

Stable Damage


at room temperature






ST FZ EPI-DO


TCT Setup (Hamburg)





Localisation

of the CM Region



Pen

etra

tion

dep

th

)dx (E(x))exp(M

d

x 0

e

a



In the CM regime







In the CM regime










Scintillator

high-purity trigger


T ~ -29degC







Oscilloscope

G Kramberger



90Sr Beta Setup

(Ljubljana)

MPV

Mean













Unirradiated diodes





on size thickness

80 e-hmicrom

97 e-hmicrom




and voltages





noise)




Q0 (75 microm)

Q0 (100 microm)








rate in DO







at 600 V

670 nm laser



Q0 (75 microm)

Q0 (100 microm)













|E|

ST


x

DO

x

|E| 75 microm

150 microm d

EW

1


Current and Noise




Larger for DO


22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

1

MMQQ

b-setup


Current and Noise




22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

Much flatter



22)(noiseshottotal

M

1

MshotshotFM

1

MIMI

1

MMQQ

TCT



Nois

e [

e]

before irradiation


670 nm

1060 nm

U [V]



670 nm

1060 nm

TCT


900 V

900 V

22

1

)(noiseshot

M

total M

MQQSNR




spectrum width






22

noisemeasspsp

EPI-ST 100 microm

EPI-ST 75 microm

b setup



unirr

CCE1


spectrum width







n-in-p strips 3D






Measurements


performed at 20degC

670nm laser (front)

e-signal in n-type

No type inversion


annealing curve)rlm

Double Junction





Results from




(670nm)


Also in Epi





Damage parameter b




n-type

be [10-16 cm2ns-1]

p-type

bh [10-16 cm2ns-1]


EPI-DO 45 plusmn 05


cf FZ 51 65

eqhe

heeff

Fbt

1






n-type a


Fluence vs Radius





Signal Formation



Trapping


Noise and CM



Noise contributions

Excess Noise Factor

(e injection)


Radiation Damage



EC

EV

ED EC

EV

ED

Etr

A Junkes






NIEL





Trapping



Annealing curve

Stable Damage


at room temperature






ST FZ EPI-DO


TCT Setup (Hamburg)





Localisation

of the CM Region



Pen

etra

tion

dep

th

)dx (E(x))exp(M

d

x 0

e

a



In the CM regime







In the CM regime










Scintillator

high-purity trigger


T ~ -29degC







Oscilloscope

G Kramberger



90Sr Beta Setup

(Ljubljana)

MPV

Mean













Unirradiated diodes





on size thickness

80 e-hmicrom

97 e-hmicrom




and voltages





noise)




Q0 (75 microm)

Q0 (100 microm)








rate in DO







at 600 V

670 nm laser



Q0 (75 microm)

Q0 (100 microm)













|E|

ST


x

DO

x

|E| 75 microm

150 microm d

EW

1


Current and Noise




Larger for DO


22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

1

MMQQ

b-setup


Current and Noise




22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

Much flatter



22)(noiseshottotal

M

1

MshotshotFM

1

MIMI

1

MMQQ

TCT



Nois

e [

e]

before irradiation


670 nm

1060 nm

U [V]



670 nm

1060 nm

TCT


900 V

900 V

22

1

)(noiseshot

M

total M

MQQSNR




spectrum width






22

noisemeasspsp

EPI-ST 100 microm

EPI-ST 75 microm

b setup



unirr

CCE1


spectrum width







n-in-p strips 3D






Measurements


performed at 20degC

670nm laser (front)

e-signal in n-type

No type inversion


annealing curve)rlm

Double Junction





Results from




(670nm)


Also in Epi





Damage parameter b




n-type

be [10-16 cm2ns-1]

p-type

bh [10-16 cm2ns-1]


EPI-DO 45 plusmn 05


cf FZ 51 65

eqhe

heeff

Fbt

1






n-type a


Signal Formation



Trapping


Noise and CM



Noise contributions

Excess Noise Factor

(e injection)


Radiation Damage



EC

EV

ED EC

EV

ED

Etr

A Junkes






NIEL





Trapping



Annealing curve

Stable Damage


at room temperature






ST FZ EPI-DO


TCT Setup (Hamburg)





Localisation

of the CM Region



Pen

etra

tion

dep

th

)dx (E(x))exp(M

d

x 0

e

a



In the CM regime







In the CM regime










Scintillator

high-purity trigger


T ~ -29degC







Oscilloscope

G Kramberger



90Sr Beta Setup

(Ljubljana)

MPV

Mean













Unirradiated diodes





on size thickness

80 e-hmicrom

97 e-hmicrom




and voltages





noise)




Q0 (75 microm)

Q0 (100 microm)








rate in DO







at 600 V

670 nm laser



Q0 (75 microm)

Q0 (100 microm)













|E|

ST


x

DO

x

|E| 75 microm

150 microm d

EW

1


Current and Noise




Larger for DO


22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

1

MMQQ

b-setup


Current and Noise




22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

Much flatter



22)(noiseshottotal

M

1

MshotshotFM

1

MIMI

1

MMQQ

TCT



Nois

e [

e]

before irradiation


670 nm

1060 nm

U [V]



670 nm

1060 nm

TCT


900 V

900 V

22

1

)(noiseshot

M

total M

MQQSNR




spectrum width






22

noisemeasspsp

EPI-ST 100 microm

EPI-ST 75 microm

b setup



unirr

CCE1


spectrum width







n-in-p strips 3D






Measurements


performed at 20degC

670nm laser (front)

e-signal in n-type

No type inversion


annealing curve)rlm

Double Junction





Results from




(670nm)


Also in Epi





Damage parameter b




n-type

be [10-16 cm2ns-1]

p-type

bh [10-16 cm2ns-1]


EPI-DO 45 plusmn 05


cf FZ 51 65

eqhe

heeff

Fbt

1






n-type a


Noise and CM



Noise contributions

Excess Noise Factor

(e injection)


Radiation Damage



EC

EV

ED EC

EV

ED

Etr

A Junkes






NIEL





Trapping



Annealing curve

Stable Damage


at room temperature






ST FZ EPI-DO


TCT Setup (Hamburg)





Localisation

of the CM Region



Pen

etra

tion

dep

th

)dx (E(x))exp(M

d

x 0

e

a



In the CM regime







In the CM regime










Scintillator

high-purity trigger


T ~ -29degC







Oscilloscope

G Kramberger



90Sr Beta Setup

(Ljubljana)

MPV

Mean













Unirradiated diodes





on size thickness

80 e-hmicrom

97 e-hmicrom




and voltages





noise)




Q0 (75 microm)

Q0 (100 microm)








rate in DO







at 600 V

670 nm laser



Q0 (75 microm)

Q0 (100 microm)













|E|

ST


x

DO

x

|E| 75 microm

150 microm d

EW

1


Current and Noise




Larger for DO


22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

1

MMQQ

b-setup


Current and Noise




22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

Much flatter



22)(noiseshottotal

M

1

MshotshotFM

1

MIMI

1

MMQQ

TCT



Nois

e [

e]

before irradiation


670 nm

1060 nm

U [V]



670 nm

1060 nm

TCT


900 V

900 V

22

1

)(noiseshot

M

total M

MQQSNR




spectrum width






22

noisemeasspsp

EPI-ST 100 microm

EPI-ST 75 microm

b setup



unirr

CCE1


spectrum width







n-in-p strips 3D






Measurements


performed at 20degC

670nm laser (front)

e-signal in n-type

No type inversion


annealing curve)rlm

Double Junction





Results from




(670nm)


Also in Epi





Damage parameter b




n-type

be [10-16 cm2ns-1]

p-type

bh [10-16 cm2ns-1]


EPI-DO 45 plusmn 05


cf FZ 51 65

eqhe

heeff

Fbt

1






n-type a


Radiation Damage



EC

EV

ED EC

EV

ED

Etr

A Junkes






NIEL





Trapping



Annealing curve

Stable Damage


at room temperature






ST FZ EPI-DO


TCT Setup (Hamburg)





Localisation

of the CM Region



Pen

etra

tion

dep

th

)dx (E(x))exp(M

d

x 0

e

a



In the CM regime







In the CM regime










Scintillator

high-purity trigger


T ~ -29degC







Oscilloscope

G Kramberger



90Sr Beta Setup

(Ljubljana)

MPV

Mean













Unirradiated diodes





on size thickness

80 e-hmicrom

97 e-hmicrom




and voltages





noise)




Q0 (75 microm)

Q0 (100 microm)








rate in DO







at 600 V

670 nm laser



Q0 (75 microm)

Q0 (100 microm)













|E|

ST


x

DO

x

|E| 75 microm

150 microm d

EW

1


Current and Noise




Larger for DO


22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

1

MMQQ

b-setup


Current and Noise




22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

Much flatter



22)(noiseshottotal

M

1

MshotshotFM

1

MIMI

1

MMQQ

TCT



Nois

e [

e]

before irradiation


670 nm

1060 nm

U [V]



670 nm

1060 nm

TCT


900 V

900 V

22

1

)(noiseshot

M

total M

MQQSNR




spectrum width






22

noisemeasspsp

EPI-ST 100 microm

EPI-ST 75 microm

b setup



unirr

CCE1


spectrum width







n-in-p strips 3D






Measurements


performed at 20degC

670nm laser (front)

e-signal in n-type

No type inversion


annealing curve)rlm

Double Junction





Results from




(670nm)


Also in Epi





Damage parameter b




n-type

be [10-16 cm2ns-1]

p-type

bh [10-16 cm2ns-1]


EPI-DO 45 plusmn 05


cf FZ 51 65

eqhe

heeff

Fbt

1






n-type a





NIEL





Trapping



Annealing curve

Stable Damage


at room temperature






ST FZ EPI-DO


TCT Setup (Hamburg)





Localisation

of the CM Region



Pen

etra

tion

dep

th

)dx (E(x))exp(M

d

x 0

e

a



In the CM regime







In the CM regime










Scintillator

high-purity trigger


T ~ -29degC







Oscilloscope

G Kramberger



90Sr Beta Setup

(Ljubljana)

MPV

Mean













Unirradiated diodes





on size thickness

80 e-hmicrom

97 e-hmicrom




and voltages





noise)




Q0 (75 microm)

Q0 (100 microm)








rate in DO







at 600 V

670 nm laser



Q0 (75 microm)

Q0 (100 microm)













|E|

ST


x

DO

x

|E| 75 microm

150 microm d

EW

1


Current and Noise




Larger for DO


22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

1

MMQQ

b-setup


Current and Noise




22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

Much flatter



22)(noiseshottotal

M

1

MshotshotFM

1

MIMI

1

MMQQ

TCT



Nois

e [

e]

before irradiation


670 nm

1060 nm

U [V]



670 nm

1060 nm

TCT


900 V

900 V

22

1

)(noiseshot

M

total M

MQQSNR




spectrum width






22

noisemeasspsp

EPI-ST 100 microm

EPI-ST 75 microm

b setup



unirr

CCE1


spectrum width







n-in-p strips 3D






Measurements


performed at 20degC

670nm laser (front)

e-signal in n-type

No type inversion


annealing curve)rlm

Double Junction





Results from




(670nm)


Also in Epi





Damage parameter b




n-type

be [10-16 cm2ns-1]

p-type

bh [10-16 cm2ns-1]


EPI-DO 45 plusmn 05


cf FZ 51 65

eqhe

heeff

Fbt

1






n-type a


Trapping



Annealing curve

Stable Damage


at room temperature






ST FZ EPI-DO


TCT Setup (Hamburg)





Localisation

of the CM Region



Pen

etra

tion

dep

th

)dx (E(x))exp(M

d

x 0

e

a



In the CM regime







In the CM regime










Scintillator

high-purity trigger


T ~ -29degC







Oscilloscope

G Kramberger



90Sr Beta Setup

(Ljubljana)

MPV

Mean













Unirradiated diodes





on size thickness

80 e-hmicrom

97 e-hmicrom




and voltages





noise)




Q0 (75 microm)

Q0 (100 microm)








rate in DO







at 600 V

670 nm laser



Q0 (75 microm)

Q0 (100 microm)













|E|

ST


x

DO

x

|E| 75 microm

150 microm d

EW

1


Current and Noise




Larger for DO


22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

1

MMQQ

b-setup


Current and Noise




22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

Much flatter



22)(noiseshottotal

M

1

MshotshotFM

1

MIMI

1

MMQQ

TCT



Nois

e [

e]

before irradiation


670 nm

1060 nm

U [V]



670 nm

1060 nm

TCT


900 V

900 V

22

1

)(noiseshot

M

total M

MQQSNR




spectrum width






22

noisemeasspsp

EPI-ST 100 microm

EPI-ST 75 microm

b setup



unirr

CCE1


spectrum width







n-in-p strips 3D






Measurements


performed at 20degC

670nm laser (front)

e-signal in n-type

No type inversion


annealing curve)rlm

Double Junction





Results from




(670nm)


Also in Epi





Damage parameter b




n-type

be [10-16 cm2ns-1]

p-type

bh [10-16 cm2ns-1]


EPI-DO 45 plusmn 05


cf FZ 51 65

eqhe

heeff

Fbt

1






n-type a



Annealing curve

Stable Damage


at room temperature






ST FZ EPI-DO


TCT Setup (Hamburg)





Localisation

of the CM Region



Pen

etra

tion

dep

th

)dx (E(x))exp(M

d

x 0

e

a



In the CM regime







In the CM regime










Scintillator

high-purity trigger


T ~ -29degC







Oscilloscope

G Kramberger



90Sr Beta Setup

(Ljubljana)

MPV

Mean













Unirradiated diodes





on size thickness

80 e-hmicrom

97 e-hmicrom




and voltages





noise)




Q0 (75 microm)

Q0 (100 microm)








rate in DO







at 600 V

670 nm laser



Q0 (75 microm)

Q0 (100 microm)













|E|

ST


x

DO

x

|E| 75 microm

150 microm d

EW

1


Current and Noise




Larger for DO


22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

1

MMQQ

b-setup


Current and Noise




22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

Much flatter



22)(noiseshottotal

M

1

MshotshotFM

1

MIMI

1

MMQQ

TCT



Nois

e [

e]

before irradiation


670 nm

1060 nm

U [V]



670 nm

1060 nm

TCT


900 V

900 V

22

1

)(noiseshot

M

total M

MQQSNR




spectrum width






22

noisemeasspsp

EPI-ST 100 microm

EPI-ST 75 microm

b setup



unirr

CCE1


spectrum width







n-in-p strips 3D






Measurements


performed at 20degC

670nm laser (front)

e-signal in n-type

No type inversion


annealing curve)rlm

Double Junction





Results from




(670nm)


Also in Epi





Damage parameter b




n-type

be [10-16 cm2ns-1]

p-type

bh [10-16 cm2ns-1]


EPI-DO 45 plusmn 05


cf FZ 51 65

eqhe

heeff

Fbt

1






n-type a




ST FZ EPI-DO


TCT Setup (Hamburg)





Localisation

of the CM Region



Pen

etra

tion

dep

th

)dx (E(x))exp(M

d

x 0

e

a



In the CM regime







In the CM regime










Scintillator

high-purity trigger


T ~ -29degC







Oscilloscope

G Kramberger



90Sr Beta Setup

(Ljubljana)

MPV

Mean













Unirradiated diodes





on size thickness

80 e-hmicrom

97 e-hmicrom




and voltages





noise)




Q0 (75 microm)

Q0 (100 microm)








rate in DO







at 600 V

670 nm laser



Q0 (75 microm)

Q0 (100 microm)













|E|

ST


x

DO

x

|E| 75 microm

150 microm d

EW

1


Current and Noise




Larger for DO


22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

1

MMQQ

b-setup


Current and Noise




22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

Much flatter



22)(noiseshottotal

M

1

MshotshotFM

1

MIMI

1

MMQQ

TCT



Nois

e [

e]

before irradiation


670 nm

1060 nm

U [V]



670 nm

1060 nm

TCT


900 V

900 V

22

1

)(noiseshot

M

total M

MQQSNR




spectrum width






22

noisemeasspsp

EPI-ST 100 microm

EPI-ST 75 microm

b setup



unirr

CCE1


spectrum width







n-in-p strips 3D






Measurements


performed at 20degC

670nm laser (front)

e-signal in n-type

No type inversion


annealing curve)rlm

Double Junction





Results from




(670nm)


Also in Epi





Damage parameter b




n-type

be [10-16 cm2ns-1]

p-type

bh [10-16 cm2ns-1]


EPI-DO 45 plusmn 05


cf FZ 51 65

eqhe

heeff

Fbt

1






n-type a


TCT Setup (Hamburg)





Localisation

of the CM Region



Pen

etra

tion

dep

th

)dx (E(x))exp(M

d

x 0

e

a



In the CM regime







In the CM regime










Scintillator

high-purity trigger


T ~ -29degC







Oscilloscope

G Kramberger



90Sr Beta Setup

(Ljubljana)

MPV

Mean













Unirradiated diodes





on size thickness

80 e-hmicrom

97 e-hmicrom




and voltages





noise)




Q0 (75 microm)

Q0 (100 microm)








rate in DO







at 600 V

670 nm laser



Q0 (75 microm)

Q0 (100 microm)













|E|

ST


x

DO

x

|E| 75 microm

150 microm d

EW

1


Current and Noise




Larger for DO


22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

1

MMQQ

b-setup


Current and Noise




22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

Much flatter



22)(noiseshottotal

M

1

MshotshotFM

1

MIMI

1

MMQQ

TCT



Nois

e [

e]

before irradiation


670 nm

1060 nm

U [V]



670 nm

1060 nm

TCT


900 V

900 V

22

1

)(noiseshot

M

total M

MQQSNR




spectrum width






22

noisemeasspsp

EPI-ST 100 microm

EPI-ST 75 microm

b setup



unirr

CCE1


spectrum width







n-in-p strips 3D






Measurements


performed at 20degC

670nm laser (front)

e-signal in n-type

No type inversion


annealing curve)rlm

Double Junction





Results from




(670nm)


Also in Epi





Damage parameter b




n-type

be [10-16 cm2ns-1]

p-type

bh [10-16 cm2ns-1]


EPI-DO 45 plusmn 05


cf FZ 51 65

eqhe

heeff

Fbt

1






n-type a




Localisation

of the CM Region



Pen

etra

tion

dep

th

)dx (E(x))exp(M

d

x 0

e

a



In the CM regime







In the CM regime










Scintillator

high-purity trigger


T ~ -29degC







Oscilloscope

G Kramberger



90Sr Beta Setup

(Ljubljana)

MPV

Mean













Unirradiated diodes





on size thickness

80 e-hmicrom

97 e-hmicrom




and voltages





noise)




Q0 (75 microm)

Q0 (100 microm)








rate in DO







at 600 V

670 nm laser



Q0 (75 microm)

Q0 (100 microm)













|E|

ST


x

DO

x

|E| 75 microm

150 microm d

EW

1


Current and Noise




Larger for DO


22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

1

MMQQ

b-setup


Current and Noise




22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

Much flatter



22)(noiseshottotal

M

1

MshotshotFM

1

MIMI

1

MMQQ

TCT



Nois

e [

e]

before irradiation


670 nm

1060 nm

U [V]



670 nm

1060 nm

TCT


900 V

900 V

22

1

)(noiseshot

M

total M

MQQSNR




spectrum width






22

noisemeasspsp

EPI-ST 100 microm

EPI-ST 75 microm

b setup



unirr

CCE1


spectrum width







n-in-p strips 3D






Measurements


performed at 20degC

670nm laser (front)

e-signal in n-type

No type inversion


annealing curve)rlm

Double Junction





Results from




(670nm)


Also in Epi





Damage parameter b




n-type

be [10-16 cm2ns-1]

p-type

bh [10-16 cm2ns-1]


EPI-DO 45 plusmn 05


cf FZ 51 65

eqhe

heeff

Fbt

1






n-type a



In the CM regime







In the CM regime










Scintillator

high-purity trigger


T ~ -29degC







Oscilloscope

G Kramberger



90Sr Beta Setup

(Ljubljana)

MPV

Mean













Unirradiated diodes





on size thickness

80 e-hmicrom

97 e-hmicrom




and voltages





noise)




Q0 (75 microm)

Q0 (100 microm)








rate in DO







at 600 V

670 nm laser



Q0 (75 microm)

Q0 (100 microm)













|E|

ST


x

DO

x

|E| 75 microm

150 microm d

EW

1


Current and Noise




Larger for DO


22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

1

MMQQ

b-setup


Current and Noise




22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

Much flatter



22)(noiseshottotal

M

1

MshotshotFM

1

MIMI

1

MMQQ

TCT



Nois

e [

e]

before irradiation


670 nm

1060 nm

U [V]



670 nm

1060 nm

TCT


900 V

900 V

22

1

)(noiseshot

M

total M

MQQSNR




spectrum width






22

noisemeasspsp

EPI-ST 100 microm

EPI-ST 75 microm

b setup



unirr

CCE1


spectrum width







n-in-p strips 3D






Measurements


performed at 20degC

670nm laser (front)

e-signal in n-type

No type inversion


annealing curve)rlm

Double Junction





Results from




(670nm)


Also in Epi





Damage parameter b




n-type

be [10-16 cm2ns-1]

p-type

bh [10-16 cm2ns-1]


EPI-DO 45 plusmn 05


cf FZ 51 65

eqhe

heeff

Fbt

1






n-type a



In the CM regime










Scintillator

high-purity trigger


T ~ -29degC







Oscilloscope

G Kramberger



90Sr Beta Setup

(Ljubljana)

MPV

Mean













Unirradiated diodes





on size thickness

80 e-hmicrom

97 e-hmicrom




and voltages





noise)




Q0 (75 microm)

Q0 (100 microm)








rate in DO







at 600 V

670 nm laser



Q0 (75 microm)

Q0 (100 microm)













|E|

ST


x

DO

x

|E| 75 microm

150 microm d

EW

1


Current and Noise




Larger for DO


22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

1

MMQQ

b-setup


Current and Noise




22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

Much flatter



22)(noiseshottotal

M

1

MshotshotFM

1

MIMI

1

MMQQ

TCT



Nois

e [

e]

before irradiation


670 nm

1060 nm

U [V]



670 nm

1060 nm

TCT


900 V

900 V

22

1

)(noiseshot

M

total M

MQQSNR




spectrum width






22

noisemeasspsp

EPI-ST 100 microm

EPI-ST 75 microm

b setup



unirr

CCE1


spectrum width







n-in-p strips 3D






Measurements


performed at 20degC

670nm laser (front)

e-signal in n-type

No type inversion


annealing curve)rlm

Double Junction





Results from




(670nm)


Also in Epi





Damage parameter b




n-type

be [10-16 cm2ns-1]

p-type

bh [10-16 cm2ns-1]


EPI-DO 45 plusmn 05


cf FZ 51 65

eqhe

heeff

Fbt

1






n-type a





Scintillator

high-purity trigger


T ~ -29degC







Oscilloscope

G Kramberger



90Sr Beta Setup

(Ljubljana)

MPV

Mean













Unirradiated diodes





on size thickness

80 e-hmicrom

97 e-hmicrom




and voltages





noise)




Q0 (75 microm)

Q0 (100 microm)








rate in DO







at 600 V

670 nm laser



Q0 (75 microm)

Q0 (100 microm)













|E|

ST


x

DO

x

|E| 75 microm

150 microm d

EW

1


Current and Noise




Larger for DO


22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

1

MMQQ

b-setup


Current and Noise




22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

Much flatter



22)(noiseshottotal

M

1

MshotshotFM

1

MIMI

1

MMQQ

TCT



Nois

e [

e]

before irradiation


670 nm

1060 nm

U [V]



670 nm

1060 nm

TCT


900 V

900 V

22

1

)(noiseshot

M

total M

MQQSNR




spectrum width






22

noisemeasspsp

EPI-ST 100 microm

EPI-ST 75 microm

b setup



unirr

CCE1


spectrum width







n-in-p strips 3D






Measurements


performed at 20degC

670nm laser (front)

e-signal in n-type

No type inversion


annealing curve)rlm

Double Junction





Results from




(670nm)


Also in Epi





Damage parameter b




n-type

be [10-16 cm2ns-1]

p-type

bh [10-16 cm2ns-1]


EPI-DO 45 plusmn 05


cf FZ 51 65

eqhe

heeff

Fbt

1






n-type a



90Sr Beta Setup

(Ljubljana)

MPV

Mean













Unirradiated diodes





on size thickness

80 e-hmicrom

97 e-hmicrom




and voltages





noise)




Q0 (75 microm)

Q0 (100 microm)








rate in DO







at 600 V

670 nm laser



Q0 (75 microm)

Q0 (100 microm)













|E|

ST


x

DO

x

|E| 75 microm

150 microm d

EW

1


Current and Noise




Larger for DO


22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

1

MMQQ

b-setup


Current and Noise




22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

Much flatter



22)(noiseshottotal

M

1

MshotshotFM

1

MIMI

1

MMQQ

TCT



Nois

e [

e]

before irradiation


670 nm

1060 nm

U [V]



670 nm

1060 nm

TCT


900 V

900 V

22

1

)(noiseshot

M

total M

MQQSNR




spectrum width






22

noisemeasspsp

EPI-ST 100 microm

EPI-ST 75 microm

b setup



unirr

CCE1


spectrum width







n-in-p strips 3D






Measurements


performed at 20degC

670nm laser (front)

e-signal in n-type

No type inversion


annealing curve)rlm

Double Junction





Results from




(670nm)


Also in Epi





Damage parameter b




n-type

be [10-16 cm2ns-1]

p-type

bh [10-16 cm2ns-1]


EPI-DO 45 plusmn 05


cf FZ 51 65

eqhe

heeff

Fbt

1






n-type a












Unirradiated diodes





on size thickness

80 e-hmicrom

97 e-hmicrom




and voltages





noise)




Q0 (75 microm)

Q0 (100 microm)








rate in DO







at 600 V

670 nm laser



Q0 (75 microm)

Q0 (100 microm)













|E|

ST


x

DO

x

|E| 75 microm

150 microm d

EW

1


Current and Noise




Larger for DO


22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

1

MMQQ

b-setup


Current and Noise




22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

Much flatter



22)(noiseshottotal

M

1

MshotshotFM

1

MIMI

1

MMQQ

TCT



Nois

e [

e]

before irradiation


670 nm

1060 nm

U [V]



670 nm

1060 nm

TCT


900 V

900 V

22

1

)(noiseshot

M

total M

MQQSNR




spectrum width






22

noisemeasspsp

EPI-ST 100 microm

EPI-ST 75 microm

b setup



unirr

CCE1


spectrum width







n-in-p strips 3D






Measurements


performed at 20degC

670nm laser (front)

e-signal in n-type

No type inversion


annealing curve)rlm

Double Junction





Results from




(670nm)


Also in Epi





Damage parameter b




n-type

be [10-16 cm2ns-1]

p-type

bh [10-16 cm2ns-1]


EPI-DO 45 plusmn 05


cf FZ 51 65

eqhe

heeff

Fbt

1






n-type a




and voltages





noise)




Q0 (75 microm)

Q0 (100 microm)








rate in DO







at 600 V

670 nm laser



Q0 (75 microm)

Q0 (100 microm)













|E|

ST


x

DO

x

|E| 75 microm

150 microm d

EW

1


Current and Noise




Larger for DO


22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

1

MMQQ

b-setup


Current and Noise




22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

Much flatter



22)(noiseshottotal

M

1

MshotshotFM

1

MIMI

1

MMQQ

TCT



Nois

e [

e]

before irradiation


670 nm

1060 nm

U [V]



670 nm

1060 nm

TCT


900 V

900 V

22

1

)(noiseshot

M

total M

MQQSNR




spectrum width






22

noisemeasspsp

EPI-ST 100 microm

EPI-ST 75 microm

b setup



unirr

CCE1


spectrum width







n-in-p strips 3D






Measurements


performed at 20degC

670nm laser (front)

e-signal in n-type

No type inversion


annealing curve)rlm

Double Junction





Results from




(670nm)


Also in Epi





Damage parameter b




n-type

be [10-16 cm2ns-1]

p-type

bh [10-16 cm2ns-1]


EPI-DO 45 plusmn 05


cf FZ 51 65

eqhe

heeff

Fbt

1






n-type a





noise)




Q0 (75 microm)

Q0 (100 microm)








rate in DO







at 600 V

670 nm laser



Q0 (75 microm)

Q0 (100 microm)













|E|

ST


x

DO

x

|E| 75 microm

150 microm d

EW

1


Current and Noise




Larger for DO


22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

1

MMQQ

b-setup


Current and Noise




22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

Much flatter



22)(noiseshottotal

M

1

MshotshotFM

1

MIMI

1

MMQQ

TCT



Nois

e [

e]

before irradiation


670 nm

1060 nm

U [V]



670 nm

1060 nm

TCT


900 V

900 V

22

1

)(noiseshot

M

total M

MQQSNR




spectrum width






22

noisemeasspsp

EPI-ST 100 microm

EPI-ST 75 microm

b setup



unirr

CCE1


spectrum width







n-in-p strips 3D






Measurements


performed at 20degC

670nm laser (front)

e-signal in n-type

No type inversion


annealing curve)rlm

Double Junction





Results from




(670nm)


Also in Epi





Damage parameter b




n-type

be [10-16 cm2ns-1]

p-type

bh [10-16 cm2ns-1]


EPI-DO 45 plusmn 05


cf FZ 51 65

eqhe

heeff

Fbt

1






n-type a




Q0 (75 microm)

Q0 (100 microm)








rate in DO







at 600 V

670 nm laser



Q0 (75 microm)

Q0 (100 microm)













|E|

ST


x

DO

x

|E| 75 microm

150 microm d

EW

1


Current and Noise




Larger for DO


22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

1

MMQQ

b-setup


Current and Noise




22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

Much flatter



22)(noiseshottotal

M

1

MshotshotFM

1

MIMI

1

MMQQ

TCT



Nois

e [

e]

before irradiation


670 nm

1060 nm

U [V]



670 nm

1060 nm

TCT


900 V

900 V

22

1

)(noiseshot

M

total M

MQQSNR




spectrum width






22

noisemeasspsp

EPI-ST 100 microm

EPI-ST 75 microm

b setup



unirr

CCE1


spectrum width







n-in-p strips 3D






Measurements


performed at 20degC

670nm laser (front)

e-signal in n-type

No type inversion


annealing curve)rlm

Double Junction





Results from




(670nm)


Also in Epi





Damage parameter b




n-type

be [10-16 cm2ns-1]

p-type

bh [10-16 cm2ns-1]


EPI-DO 45 plusmn 05


cf FZ 51 65

eqhe

heeff

Fbt

1






n-type a



Q0 (75 microm)

Q0 (100 microm)













|E|

ST


x

DO

x

|E| 75 microm

150 microm d

EW

1


Current and Noise




Larger for DO


22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

1

MMQQ

b-setup


Current and Noise




22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

Much flatter



22)(noiseshottotal

M

1

MshotshotFM

1

MIMI

1

MMQQ

TCT



Nois

e [

e]

before irradiation


670 nm

1060 nm

U [V]



670 nm

1060 nm

TCT


900 V

900 V

22

1

)(noiseshot

M

total M

MQQSNR




spectrum width






22

noisemeasspsp

EPI-ST 100 microm

EPI-ST 75 microm

b setup



unirr

CCE1


spectrum width







n-in-p strips 3D






Measurements


performed at 20degC

670nm laser (front)

e-signal in n-type

No type inversion


annealing curve)rlm

Double Junction





Results from




(670nm)


Also in Epi





Damage parameter b




n-type

be [10-16 cm2ns-1]

p-type

bh [10-16 cm2ns-1]


EPI-DO 45 plusmn 05


cf FZ 51 65

eqhe

heeff

Fbt

1






n-type a


Current and Noise




Larger for DO


22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

1

MMQQ

b-setup


Current and Noise




22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

Much flatter



22)(noiseshottotal

M

1

MshotshotFM

1

MIMI

1

MMQQ

TCT



Nois

e [

e]

before irradiation


670 nm

1060 nm

U [V]



670 nm

1060 nm

TCT


900 V

900 V

22

1

)(noiseshot

M

total M

MQQSNR




spectrum width






22

noisemeasspsp

EPI-ST 100 microm

EPI-ST 75 microm

b setup



unirr

CCE1


spectrum width







n-in-p strips 3D






Measurements


performed at 20degC

670nm laser (front)

e-signal in n-type

No type inversion


annealing curve)rlm

Double Junction





Results from




(670nm)


Also in Epi





Damage parameter b




n-type

be [10-16 cm2ns-1]

p-type

bh [10-16 cm2ns-1]


EPI-DO 45 plusmn 05


cf FZ 51 65

eqhe

heeff

Fbt

1






n-type a


Current and Noise




22

noiseshotnoise)M(

1

MshotshotFM

1

MIMI

Much flatter



22)(noiseshottotal

M

1

MshotshotFM

1

MIMI

1

MMQQ

TCT



Nois

e [

e]

before irradiation


670 nm

1060 nm

U [V]



670 nm

1060 nm

TCT


900 V

900 V

22

1

)(noiseshot

M

total M

MQQSNR




spectrum width






22

noisemeasspsp

EPI-ST 100 microm

EPI-ST 75 microm

b setup



unirr

CCE1


spectrum width







n-in-p strips 3D






Measurements


performed at 20degC

670nm laser (front)

e-signal in n-type

No type inversion


annealing curve)rlm

Double Junction





Results from




(670nm)


Also in Epi





Damage parameter b




n-type

be [10-16 cm2ns-1]

p-type

bh [10-16 cm2ns-1]


EPI-DO 45 plusmn 05


cf FZ 51 65

eqhe

heeff

Fbt

1






n-type a



22)(noiseshottotal

M

1

MshotshotFM

1

MIMI

1

MMQQ

TCT



Nois

e [

e]

before irradiation


670 nm

1060 nm

U [V]



670 nm

1060 nm

TCT


900 V

900 V

22

1

)(noiseshot

M

total M

MQQSNR




spectrum width






22

noisemeasspsp

EPI-ST 100 microm

EPI-ST 75 microm

b setup



unirr

CCE1


spectrum width







n-in-p strips 3D






Measurements


performed at 20degC

670nm laser (front)

e-signal in n-type

No type inversion


annealing curve)rlm

Double Junction





Results from




(670nm)


Also in Epi





Damage parameter b




n-type

be [10-16 cm2ns-1]

p-type

bh [10-16 cm2ns-1]


EPI-DO 45 plusmn 05


cf FZ 51 65

eqhe

heeff

Fbt

1






n-type a




spectrum width






22

noisemeasspsp

EPI-ST 100 microm

EPI-ST 75 microm

b setup



unirr

CCE1


spectrum width







n-in-p strips 3D






Measurements


performed at 20degC

670nm laser (front)

e-signal in n-type

No type inversion


annealing curve)rlm

Double Junction





Results from




(670nm)


Also in Epi





Damage parameter b




n-type

be [10-16 cm2ns-1]

p-type

bh [10-16 cm2ns-1]


EPI-DO 45 plusmn 05


cf FZ 51 65

eqhe

heeff

Fbt

1






n-type a



unirr

CCE1


spectrum width







n-in-p strips 3D






Measurements


performed at 20degC

670nm laser (front)

e-signal in n-type

No type inversion


annealing curve)rlm

Double Junction





Results from




(670nm)


Also in Epi





Damage parameter b




n-type

be [10-16 cm2ns-1]

p-type

bh [10-16 cm2ns-1]


EPI-DO 45 plusmn 05


cf FZ 51 65

eqhe

heeff

Fbt

1






n-type a




n-in-p strips 3D






Measurements


performed at 20degC

670nm laser (front)

e-signal in n-type

No type inversion


annealing curve)rlm

Double Junction





Results from




(670nm)


Also in Epi





Damage parameter b




n-type

be [10-16 cm2ns-1]

p-type

bh [10-16 cm2ns-1]


EPI-DO 45 plusmn 05


cf FZ 51 65

eqhe

heeff

Fbt

1






n-type a






Measurements


performed at 20degC

670nm laser (front)

e-signal in n-type

No type inversion


annealing curve)rlm

Double Junction





Results from




(670nm)


Also in Epi





Damage parameter b




n-type

be [10-16 cm2ns-1]

p-type

bh [10-16 cm2ns-1]


EPI-DO 45 plusmn 05


cf FZ 51 65

eqhe

heeff

Fbt

1






n-type a





Results from




(670nm)


Also in Epi





Damage parameter b




n-type

be [10-16 cm2ns-1]

p-type

bh [10-16 cm2ns-1]


EPI-DO 45 plusmn 05


cf FZ 51 65

eqhe

heeff

Fbt

1






n-type a






n-type a

Charge Multiplication - a Solution towards Radiation-Hard ... · a Solution towards Radiation...

Documents

Transcript of Charge Multiplication - a Solution towards Radiation-Hard ... · a Solution towards Radiation...