Charge Long-range magnetic order Implemented by Coupling Xavier Marti,...

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Charge Long-range magnetic order Implemented by Coupling Xavier Marti, [email protected] http://usuaris.tinet.cat/ xmarti/talks 1. Metals: AMR,GMR 2. Semiconductors 3. Insulators Standard substrates Room temperature Grown on Boston Feb2012 tute of Physics (Prague) – University Nottin COBRA Inter-University Eindhoven -ORNL

Transcript of Charge Long-range magnetic order Implemented by Coupling Xavier Marti,...

Charge Long-range magnetic order

Implemented by Coupling

Xavier Marti, [email protected]://usuaris.tinet.cat/xmarti/talks

1. Metals: AMR,GMR2. Semiconductors3. Insulators

Standard substratesRoom temperature

Grown on

Boston Feb2012

Institute of Physics (Prague) – University Nottingham COBRA Inter-University Eindhoven -ORNL

DopingTemperature

Xavier Marti, [email protected]://usuaris.tinet.cat/xmarti/talks

GaAs

Ga

As

(Ga,Mn)As

Ga

As

Mn

MnAs

FerromagneticSemiconductor

III-V FM TC (K) AFM TN (K)FeN 100FeP 115FeAs 77FeSb 100-220GdN 72GdP 15GdAs 19GdSb 27

II-VI FM TC (K) AFM TN (K)MnO 122MnS 152MnSe 173MnTe 323EuO 67EuS 16EuSe 5EuTe 10

Xavier Marti, [email protected]://usuaris.tinet.cat/xmarti/talks

Intrinsic III-V and II-VI semiconductors

Maca et al., JMMM 324, 1606 (2012)

Large SOC Large momentLarge moment

Large SOC Large momentLarge moment

Schick et al., PRB 81, 212409 (2010)

Xavier Marti, [email protected]://usuaris.tinet.cat/xmarti/talks

Large SOC Large momentLarge moment

Large SOC Large momentLarge moment

Schick et al., PRB 81, 212409 (2010)

Xavier Marti, [email protected]://usuaris.tinet.cat/xmarti/talks

T15 Room 213

Helena Reichlova

Large SOC Large momentLarge moment

Large SOC Large momentLarge moment

Schick et al., PRB 81, 212409 (2010)

Xavier Marti, [email protected]://usuaris.tinet.cat/xmarti/talks

Crystal and magnetic structure: Bronger et al, Z. anorg. allg. Chem. 539, 175 (1986)

THEORYSemiconductor with huge spin-orbit coupling

GAP

Xavier Marti, [email protected]://usuaris.tinet.cat/xmarti/talks

InAs

4.27A

4.28A

THIN FILM EPILAYERS

V. Novak, et al., J. Cryst. Growth 323, 348 (2011)

log(

inte

nsit

y)

InAs

4.27A

4.28A

THIN FILM EPILAYERS

LiMnAs has a bandgap

InAs

Li MnAs

4.27A

4.28A

I. Wijnheijmer et al, Appl. Phys. Lett. In press

dI/dV map

Is LiMnAs the only choice available?

Xavier Marti, [email protected]://usuaris.tinet.cat/xmarti/talks

Xavier Marti, [email protected]://usuaris.tinet.cat/xmarti/talks

V. M. Ryzhkovsky, et al., Inorg. Mater. 32 117 (1995)

A.E. Austin, et al.,J. Appl. Phys. 33 1356 (1962)

TNRT

Xavier Marti, [email protected]://usuaris.tinet.cat/xmarti/talks

[110]

[110]_

CuMnAs grown on GaAs

0 0.1 0.2 0.3 0.4 0.5 0.6 0.70

1

2

3

4

5x 10

6

Qz (A

-1)

Out-of-plane param (A):6.2933

Qx (A

-1)

Qy (

A-1

)

Spectra of in-plane periodicities in the substrate

-0.5 0 0.5-0.6

-0.4

-0.2

0

0.2

0.4

0.6

Qx (A

-1)

Qy (

A-1

)

Spectra of in-plane periodicities in the thin film

-0.5 0 0.5-0.6

-0.4

-0.2

0

0.2

0.4

0.6

GaAs

CuMnAs

Xavier Marti, [email protected]://usuaris.tinet.cat/xmarti/talks

CuMnAs grown on GaAs

0 0.1 0.2 0.3 0.4 0.5 0.6 0.70

1

2

3

4

5x 10

6

Qz (A

-1)

Out-of-plane param (A):6.2933

Qx (A

-1)

Qy (

A-1 )

Spectra of in-plane periodicities in the substrate

-0.5 0 0.5-0.6

-0.4

-0.2

0

0.2

0.4

0.6

Qx (A

-1)

Qy (

A-1 )

Spectra of in-plane periodicities in the thin film

-0.5 0 0.5-0.6

-0.4

-0.2

0

0.2

0.4

0.6

GaAs

CuMnAs

L=1 L=2 L=3

ab

c

a = b = 5.407 Åc = 6.313 Å

GaAs, a = 5.65 Å

Xavier Marti, [email protected]://usuaris.tinet.cat/xmarti/talks

TEM: Jaume Gazquez, Oak Ridge NL

Growth: R. Campion, Nottingham

Xavier Marti, [email protected]://usuaris.tinet.cat/xmarti/talks

TEM: Jaume Gazquez, Oak Ridge NL

Growth: R. Campion, Nottingham

GaAs

CuMnAs

Xavier Marti, [email protected]://usuaris.tinet.cat/xmarti/talks

GaAs

Fe 10 nm

(c)

[001](e)

300 K

GaAs

CuMnAs

Fe

Xavier Marti, [email protected]://usuaris.tinet.cat/xmarti/talks

(c)

[001](e)

300 K

Fe/CuMnAs exchange bias

GaAs

CuMnAs

Fe

CuMnAs grown on GaAs

Xavier Marti, [email protected]://usuaris.tinet.cat/xmarti/talks

(c)

[001](e)

GAP

300 K

Fe/CuMnAs exchange bias

Xavier Marti, [email protected]://usuaris.tinet.cat/xmarti/talks

Prague : P. Wadley, H. Reichlova, M. Cukr, F. Maca, A.B. Shick, J. Masek, P. Horodyska, P. Nemec, V. Holy, J. Zemen, P. Kuzel, I. Nemec, K. Olejnik, J. Wunderlich, O. Stelmakhovych, K. Ulrihova, P. Beran, V. Novak, T. JungwirthNottingham : R. Campion, K. Edmonds, B. Gallagher, C.T. FoxonEindhoven : I. Wijnheijmer, P. KoenraadORNL: J. Gazquez, M. Varela

Charge Long-range magnetic order

Implemented by Coupling

1. Metals: AMR,GMR2. Semiconductors3. Insulators

Standard substratesRoom temperature

Grown on

Thanks for your attention

LiMnAsCuMnAs