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A charge-coupled device (CCD) is an analog shift registerthat enables the transportation ofanalog signals (electric charges) through successive stages (capacitors), controlled by a clock
signal. Charge-coupled devices can be used as a form of memory or for delaying samples ofanalog signals. Today, they are most widely used in arrays of photoelectric light sensors to
serialize parallel analog signals. Not all image sensors use CCD technology; for example,
CMOS chips are also commercially available.
"CCD" refers to the way that the image signal is read out from the chip. Under the control of
an external circuit, each capacitor can transfer its electric charge to one or another of its
neighbors. CCDs are used in digital photography, digitalphotogrammetry, astronomy
(particularly inphotometry), sensors, electron microscopy, medical fluoroscopy, optical and
UVspectroscopy, and high speed techniques such as lucky imaging.
history
Eugene F. Lally of the Jet Propulsion Laboratory wrote a paper published in 1961, "Mosaic
Guidance for Interplanetary Travel", illustrating a mosaic array of optical detectors that
formed a photographic image using digital processing. Digital photography was conceived by
this paper. Lally noted such an optical array required development so digital cameras could
be produced. The required array consisting of CCD technology was invented in 1969 by
Willard Boyle and George E. Smith at AT&T Bell Labs. The lab was working on the picture
phone and on the development ofsemiconductorbubble memory. Merging these two
initiatives, Boyle and Smith conceived of the design of what they termed 'Charge "Bubble"
Devices'. The essence of the design was the ability to transfer charge along the surface of a
semiconductor. As the CCD started its life as a memory device, one could only "inject"
charge into the device at an input register. However, it was immediately clear that the CCD
could receive charge via thephotoelectric effect and electronic images could be created. By
1969, Bell researchers were able to capture images with simple linear devices; thus the CCD
was born. Several companies, including Fairchild Semiconductor, RCA and Texas
Instruments, picked up on the invention and began development programs. Fairchild was thefirst with commercial devices and by 1974 had a linear 500 element device and a 2-D 100 x100 pixel device. Under the leadership of Kazuo Iwama, Sony also started a big development
effort on CCDs involving a significant investment. Eventually, Sony managed to massproduce CCDs for their camcorders. Before this happened, Iwama died in August 1982.
Subsequently, a CCD chip was placed on his tombstone to acknowledge his contribution.[1]
In January 2006, Boyle and Smith were awarded theNational Academy of EngineeringCharles Stark Draper Prize for their work on the CCD.[2
Basics of operation
In a CCD for capturing images, there is a photoactive region (an epitaxial layer of silicon),
and a transmission region made out of a shift register (the CCD, properly speaking).
An image is projected by a lens on the capacitor array (the photoactive region), causing each
capacitor to accumulate an electric charge proportional to the light intensity at that location.
A one-dimensional array, used in line-scan cameras, captures a single slice of the image,
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whil two-di ional array, used in video and still cameras, captures a two-dimensionalpicture corresponding to the scene projected onto the focal plane ofthe sensor. Once the array
has been exposed to the image, a control circuit causes each capacitorto transferits contentsto its neighbor. The last capacitorin the array dumps its charge into acharge amplifier, which
converts the charge into a voltage. By repeating this process, the controlling circuit convertsthe entire semiconductor contents ofthe array to a sequence of voltages, which it samples,
digiti es and stores in some form of memory.
"One-dimensional"CC from a fax machine.
[edi ] etailed physi s of operation
The photoactive region ofthe CC is, generally, anepitaxiallayer ofsilicon. It has a doping
of p+ (Boron) and is grown upon the substrate material, often p++. Inburied channel devices,the type of design utili ed in most modern CC s, certain areas ofthe surface ofthe silicon
are ion implanted withphosphorus, giving them an n-doped designation. This region definesthe channelin which the photogenerated charge packets willtravel. The gate oxide, i.e. the
capacitordielectric, is grown on top ofthe epitaxiallayer and substrate. Later on in theprocesspolysilicon gates are deposited by chemical vapor deposition, patterned with
photolithography, and etched in such a way thatthe separately phased gates lie perpendicular
to the channels. The channels are further defined by utili ation oftheLOCOS process to
produce the channel stop region. Channel stops are thermally grownoxidesthat serve to
isolate the charge packets in one column from those in another. These channel stops are
produced before the polysilicon gates are, as the LOCOS process utili es a high temperature
step that would destroy the gate material. The channels stops are parallelto, and exclusive of,
the channel, or"charge carrying", regions. Channel stops often have a p+ doped region
underlying them, providing a further barrierto the electrons in the charge packets (this
discussion ofthe physics ofCC devices assumes anelectrontransfer device, though hole
transferis possible).
One should note thatthe clocking ofthe gates, alternately high and low, will forward andreverse bias the diode thatis provided by the buried channel (n-doped) and the epitaxiallayer
(p-doped). This will cause the CC to deplete, nearthep-njunction and will collect and
move the charge packets beneath the gates and within the channels ofthe device.
It should be noted thatCC manufacturing and operation can be optimi ed fordifferent uses.
The above process describes a frame transferCC . While CC s may be manufactured on aheavily doped p++ waferitis also possible to manufacture a device inside p-wells that have
been placed on an n-wafer. This second method, reportedly, reduces smear, dark current, and
infrared and red response. This method of manufacture is used in the construction ofinterline
transfer devices.
Another version ofCC is called a peristaltic CC . In a peristaltic charge-coupled device,
the charge packettransfer operation is analogous to the peristaltic contraction and dilation ofthe digestive system. The peristaltic CC has an additionalimplantthat keeps the charge
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away from the silicon/silicon dioxide interface and generates a large lateral electric field fromone gate to the next. This provides an additional driving force to aide in transfer of the charge
packets.
[edit Architecture
The CCD image sensors can be implemented in several different architectures. The most
common are full-frame, frame-transfer and interline. The distinguishing characteristic of eachof these architectures is their approach to the problem of shuttering.
In a full-frame device, all of the image area is active and there is no electronic shutter. A
mechanical shutter must be added to this type of sensor or the image will smear as the device
is clocked or read out.
With a frame transfer CCD, half of the silicon area is covered by an opaque mask (typically
aluminium). The image can be quickly transferred from the image area to the opaque area or
storage region with acceptable smear of a few percent. That image can then be read out
slowly from the storage region while a new image is integrating or exposing in the activearea. Frame-transfer devices typically do not require a mechanical shutter and were a
common architecture for early solid-state broadcast cameras. The downside to the frame-
transfer architecture is that it requires twice the silicon real estate of an equivalent full-framedevice; hence, it costs roughly twice as much.
The interline architecture extends this concept one step further and masks every other column
of the image sensor for storage. In this device, only one pixel shift has to occur to transfer
from image area to storage area; thus, shutter times can be less than a microsecond and smear
is essentially eliminated. The advantage is not free, however, as the imaging area is now
covered by opaque strips dropping the fill factorto approximately 50% and the effective
quantum efficiency by an equivalent amount. Modern designs have addressed this deleterious
characteristic by adding microlenses on the surface of the device to direct light away from theopaque regions and on the active area. Microlenses can bring the fill factor back up to 90% or
more depending on pixel size and the overall system's optical design.
The choice of architecture comes down to one of utility. If the application cannot tolerate an
expensive, failure prone, power hungry mechanical shutter, then an interline device is the
right choice. Consumer snap-shot cameras have used interline devices. On the other hand, for
those applications that require the best possible light collection and issues of money, powerand time are less important, the full-frame device will be the right choice. Astronomers tend
to prefer full-frame devices. The frame-transfer falls in between and was a common choicebefore the fill-factor issue of interline devices was addressed. Today, the choice of frame-
transfer is usually made when an interline architecture is not available, such as in a back-
illuminated device.
CCDs containing grids ofpixels are used in digital cameras, optical scanners and video
cameras as light-sensing devices. They commonly respond to 70% of the incident light
(meaning a quantum efficiency of about 70%) making them far more efficient than
photographic film, which captures only about 2% of the incident light.
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CC from a 2.1 megapixelArgus digital camera.
CC from a 2.1 megapixelHewlett-Packard digital camera.
Most common types ofCC s are sensitive to near-infrared light, which allows infrared
photography, night-vision devices, and zero lux (or near zero lux) video-recording/photography. For normal silicon based detectors the sensitivity is limited to 1.1m.
One other consequence oftheir sensitivity to infrared is thatinfrared fromremote controlswill often appear on CC -based digital cameras or camcorders ifthey don't have infrared
blockers.
Cooling reduces the array's dark current, improving the sensitivity ofthe CC to low lightintensities, even for ultraviolet and visible wavelengths. Professional observatories will often
cooltheir detectors with liquid nitrogen, to reduce the dark current, and hence the thermal
noise, to negligible levels.
[edit] Astronomi al CCDs
Due to the high quantum efficiencies ofCCDs, linearity oftheir outputs (one count for onephoton oflight), ease of use compared to photographic plates, and a variety of other reasons,
CCDs were very rapidly adopted by astronomers for nearly all UV-to-infrared applications.
Thermal noise, dark current, and cosmic rays may alterthe pixels in the CCD array. To
counter such effects, astronomers take an average of several exposures with the CCD shutter
closed and opened. The average ofimages taken with the shutter closed is necessaryto lower
the random noise. Once developed, thedark frame average image is then subtractedfromthe open-shutterimage to remove the dark current and other systematic defects in the CCD
(dead pixels, hot pixels, etc.). The Hubble Space Telescope, in particular, has a highlydeveloped series of steps (data reduction pipeline) used to convertthe raw CCD data to
usefulimages. See[3]
for a more in-depth description ofthe steps in processing astronomicalCCD data.
CCD cameras used in astrophotography often require sturdy mounts to cope with vibrations
and breezes, along with the tremendous weight of mostimaging platforms. To take long
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exposures of galaxies and nebulae, many astronomers use a technique known as auto-guiding.Most autoguiders use a second CCD chip to monitor deviations during imaging. Thischip
can rapidly detect errors in tracking and command the mount's motors to correct forthem.
Array of 30 CCDs used on Sloan Digital Sky Surveytelescope imaging camera, an example
of"drift-scanning."
An interesting unusual astronomical application ofCCDs, called "drift-scanning", is to use a
CCD to make a fixed telescope behave like a tracking telescope and follow the motion ofthesky. The charges in the CCD are transferred and read in a direction parallelto the motion of
the sky, and atthe same speed. In this way, the telescope can image a larger region ofthe skythan its normal field of view. The Sloan Digital Sky Surveyis the most famous example of
this, using the technique to produce the largest uniform survey ofthe sky yet.
[edit] Color cameras
A Bayer filteron a CCD
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CCD-Colorsensor
Canon PowerShot A720 IS has an 1/2,5 inch CCD-Colorsensorinside
Digital color cameras generally use a Bayer maskoverthe CCD. Each square of four pixels
has one filtered red, one blue, and two green (the humaneyeis more sensitive to green than
either red or blue). The result ofthis is thatluminanceinformation is collected at every pixel,
butthe color resolution is lowerthan the luminance resolution.
Better color separation can be reached by three-CCD devices (3CCD) and a dichroic beam
splitter prism, that splits the imageinto red, green andblue components. Each ofthe threeCCDs is arranged to respond to a particular color. Some semi-professional digital video
camcorders (and most professionals) use this technique. Another advantage of 3CCD over a
Bayer mask device is higherquantum efficiency (and therefore higherlight sensitivity for a
given aperture size). This is because in a 3CCD device most ofthe light entering the aperture
is captured by a sensor, while a Bayer mask absorbs a high proportion (about 2/3) ofthe light
falling on each CCD pixel.
Since a very-high-resolution CCD chip is very expensive (as of 2005), a 3CCD high-resolution still camera would be beyond the price range even of many professional
photographers. There are some high-end still cameras that use a rotating color filterto
achieve both color-fidelity and high-resolution. These multi-shot cameras are rare and can
only photograph objects that are not moving.
[edit] Sensor sizes
Sensors (CCD /CMOS) are often referred to with an imperial fraction designation such as1/1.8" or 2/3", this measurement actually originates backin the 1950s and the time of
Vidicon tubes. Compact digital cameras and Digicams typically have much smaller sensorsthan a Digital SLRand are thus less sensitive to light and inherently more prone to noise.
Some examples ofthe CCDs found in modern cameras can be found inthis tablein a DigitalPhotography Review article
Type Aspect Ratio Widthmm
Hei htmm
Diagonalmm
Areamm2
Relati eArea
1/ " 4:3 2.300 1.730 2.878 3.979 1.000
1/4" 4:3 3.200 2.400 4.000 7.680 1.930
1/3.6" 4:3 4.000 3.000 5.000 12.000 3.016
1/3.2" 4:3 4.536 3.416 5.678 15.495 3.894
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1/3" 4:3 4.800 3.600 6.000 17.280 4.343
1/2.7" 4:3 5.270 3.960 6.592 20.869 5.245
1/2" 4:3 6.400 4.800 8.000 30.720 7.721
1/1.8" 4:3 7.176 5.319 8.932 38.169 9.593
2/3" 4:3 8.800 6.600 11.000 58.080 14.597
1" 4:3 12.800 9.600 16.000 122.880 30.882
4/3" 4:3 18.000 13.500 22.500 243.000 61.070
Other image sizes as a comparison
APS-C 3:2 25.100 16.700 30.148 419.170 105.346
35mm 3:2 36.000 24.000 43.267 864.000 217.140
645 4:3 56.000 41.500 69.701 2324.000 584.066
Electron-multiplying CCD
From Wikipedia, the free encyclopedia
(Redirected from Electron multiplying CCD)
Jump to: navigation, search
Electrons are transferred serially through the gain stages making up the multiplication register of an
EMCCD. The high voltages used in these serial transfers induce the creation of additional charge
carriers through impact ionisation.
There is a dispersion (variation) in the number of electrons output by the multiplication register for a
given (fixed) number of input electrons (shown in the legend on the right). The probability
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distribution for the number of output electrons is plottedlogarithmically on the vertical axis for a
simulation of a multiplication register. Also shown are results from theempirical fit equation shown
on this page.
An electron-multiplying CCD (EMCCD, also known as an L3Vision CCD, L3CCD or
Impactron CCD) is a charge-coupled devicein which a gain registeris placed between the
shift register and the output amplifier. The gain registeris split up into a large number of
stages. In each stage the electrons are multiplied byimpactionizationin a similar way to an
avalanche diode. The gain probability at every stage ofthe registeris small (P< 2%) but as
the number of elements is large (N > 500), the overall gain can be very high (g= (1 + P)N
),
with single input electrons giving many thousands of output electrons. Reading a signal from
a CCD gives a noise background, typically a few electrons. In an EMCCD this noise is
superimposed on many thousands of electrons ratherthan a single electron;the devices thus
have negligible readout noise.
EMCCDs show a similar sensitivity to Intensified CCDs (ICCDs). However, as with ICCDs,
the gain thatis applied in the gain registeris stochastic and theexactgain that has been
applied to a pixel's charge is impossible to know. At high gains (> 30), this uncertainty hasthe same effect on the signal-to-noise ratio (SNR) as halving the quantum efficiency with
respectto operation with a gain of unity. However, at very low lightlevels (where the
quantum efficiency is mostimportant) it can be assumed that a pixel either contains an
electron - or not. This removes the noise associated with the stochastic multiplication atthecost of counting multiple electrons in the same pixel as a single electron. The dispersion in
the gain is shown in the graph on the right. For multiplication registers with many elementsand large gains itis well modelled by the equation:
if
where Pis the probability of getting n output electrons givenminput electrons and a total
mean multiplication register gain ofg.
Because ofthe lower costs and the somewhat better resolution EMCCDs are capable of
replacing ICCDs in many applications. ICCDs still have the advantage thatthey can be gated
very fast and thus are usefulin applications like range-gated imaging. EMCCD cameras
indispensably need a cooling system to coolthe chip down to temperatures around 170K.
This cooling system unfortunately adds additional costs to the EMCCD imaging system and
often yields heavy condensation problems in the application.
The low-light capabilities of L3CCDs are starting to find use in astronomy. In particulartheir
low noise at high readout speeds makes them very useful forlucky imaging of faint stars, andhigh speed photon counting photometry.
Commercial EMCCD cameras typically have clock-induced charge and darkcurrent
(dependent on the extent of cooling) thatleads to an effective readout noise ranging from0.01 to 1 electrons per pixel read. Custom-built deep-cooled non-inverting mode EMCCD
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cameras have provided effective readout noise lowerthan 0.1 electrons per pixel read[1] forlucky imaging observations.
Super CCD
From Wikipedia, the free encyclopedia
Jump to: navigation, search
Layout of sensors on Super CCD matrices.
Super CCDis a proprietary charge-coupled devicethat has been developed byFujifilm since1999.[1] The SuperCCD uses octagonal, ratherthan rectangular, pixels. This allows a higher
horizontal and vertical resolution (atthe expense of diagonal resolution) to be achieved than atraditional sensor of an equivalent pixel count.
On January 21, 2003 Fujifilm announced the fourth generation of SuperCCD sensors, in two
variations: SuperCCD HRand SuperCCD SR.[2][3]
HRstands for"High Resolution" and SRstands for"Super dynamic Range". The SRsensor has twophotodiodes per photosite, one
much largerthan the other. Appropriately processing information from both can yield larger
blackto white range of brightness (dynamic range).
The 4th Generation SuperCCD HRhas sensors placed at 45 degrees to the horizontal. Inorderto convertthe images into the normal horizontal/vertical pixel orientation, it
interpolates one pixel between each pair of sensors, thereby producing 12 recordedmegapixels from 6 effective megapixels. By contrast, Fujifilm says that 5th Generation Super
CCD HRsensors are also at 45 degrees but do notinterpolate. However, it omits to explainhow the sensors turn the image into horizontal/vertical pixels withoutinterpolating.
On July 29, 2005 Fujifilm announced cameras with "5th Generation SuperCCD HRsensors",the FinePix S5200 (S5600) and FinePix S9000 (S9500).
The FinePix F10 and F11 were released laterin 2005, and in a test at dpreview.com, the F10
clearly outperformed the S9000 at 400 ISO.
In 2006 Fujiintroduced the 6th generation ofthe SuperCCD sensor (size 1/1.7", 6.3 millioneffective pixels, except forthe F40fd which has size 1/1.6", 8.3 million effective pixels). This
sensor allows for acceptable image quality even at ISO 800. Itis builtinto theFinePix
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S6500fd (2006) bridge camera and the FinePix F-series F30, F20 (2006), F31fd and F40fd(2007) compact cameras, all of which are widely accredited for their class leading low-light
capabilities.[4][5]
In late 2007 the 7th generation was introduced (size 1/1.6", 12 million effective pixels).
Included in Fuijfilm FinePix F50d (2007). This sensor, although sharp, has significantly
decreased ISO performance compared to earlier generations, dropping in quality to mereaverage level.
[6]In mid 2008 the 8th generation was introduced (same size 1/1.6", 12 million
effective pixels), included in Fujifilm FinePix F100d (2008). This sensor improves slightly on
the previously lost ISO performance, but does still not seem to compare with the 6th
generation sensors.
In September 2008 Fujifilm announced a new type of Super CCD sensor, theSuper CCD
EXR.[7]
This sensor aims at combining the advantages of the HR and SR sensor types in a
single chip. It uses a new color filter array layout that allows for binning (combining) of
pixels of the same color.
Three-CCD or3CCD is a term used to describe an imaging system employed by some still
cameras, video cameras, telecine and camcorders. Three-CCD cameras have three separate
charge-coupled devices (CCDs), each one taking a separate measurement of red, green, and
blue light. Light coming into the lens is split by a trichroic prism assembly, which directs the
appropriate wavelength ranges of light to their respective CCDs. Three-CCD cameras are
generally regarded to provide superior image quality to cameras with only one CCD. By
taking a separate reading of red, green, and blue values for each pixel, three-CCD cameras
achieve much better precision than single-CCD cameras. Almost all single-CCD cameras use
abayer filter, which allows them to detect only one-third of the color information for each
pixel. The other t wo-thirds must be interpolated with a demosaicing algorithm to 'fill in the
gaps'.
The combination of the three sensors can be done in the following ways :
y Composite sampling, where the three sensors are perfectly aligned to avoid any colorartifact when recombining the information from the three color planes
y Pixel shifting, where the three sensors are shifted by a fraction of a pixel. Afterrecombining the information from the three sensors, higher spatial resolution can be
achieved.[1]
Pixel shifting can be horizontal only to provide higher horizontal
resolution in standard resolution camera, or horizontal and vertical to provide high
resolution image using standard resolution imager for example. The alignment of thethree sensors can be achieved by micro mechanical movements of the sensors relativeto each other.
y Arbitrary alignment, where the random alignment errors due to the optics arecomparable to or larger than the pixel size.
Three-CCD cameras are generally more expensive than single-CCD cameras because they
require three times as many elements to form the image detector, and because they require a
precision color-separation beam-splitter optical assembly.
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The concept of cameras using three image pickups, one for eachprimary color, was firstdeveloped for color photography on three glass plates in the late nineteenth century, and in
the 1960s through 1980s was the dominant method to record colorimages in television, asother possibilities to record more than one color on the video camera tube were difficult.
Three-CCD cameras are often referred to as "three-chip" cameras;this term is actually more
descriptive and inclusive, since itincludes cameras that use CMOSactive pixel sensorsinstead ofCCDs.
A color-separation beam splitter prism assembly, with a white beam entering the front, and red,
green, and blue beams exiting the three focal-plane faces.
A Philips type trichroic beam splitter prism schematic, with a different color separation order than
the assembly shown in the photo. The red beam undergoes total internal reflection at the air gap,
while the other reflections are dichroic
[edit]Efficiency
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Dielectric mirrors can be produced as low-pass, high-pass, band-pass, or band-stop filters. Inthe example shown, a red and a blue mirror reflect the respective bands back, somewhat off
axis. The angles are kept as small as practical to minimize polarization-dependent coloreffects. To reduce unwanted reflections, air-glass interfaces are minimized; the image sensors
may be attached to the exit faces with an index-matched optical epoxy, sometimes with an
intervening color trim filter. The Philips type prism includes an air gap with total internal
reflection in one light path, while the other prism shown above does not. A typical Bayerfiltersingle-chip image sensor absorbs at least two-thirds of the visible light with its filters,
while in a three-CCD sensor the filters absorb only stray light and invisible light, and
possibly a little more for color tuning, so that the three-chip sensor has better low light
capabilities.