Carbon sputtering technology for ATLAS MicroMEGAS resistive

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Carbon sputtering technology for ATLAS MicroMEGAS resistive Atsuhiko Ochi 1 , Yasuhiro Homma 1 , Tsuyoshi Takemoto 1 , Fumiya Yamane 1 , Yousuke Kataoka 2 , Tatsuya Masubuchi 2 , Yuki Kawanishi 2 , Shingo Terao 2 Kobe University 1 , Univ. Tokyo ICEPP 2 06/02/2014 13 th RD51 meeting@ CERN

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Carbon sputtering technology for ATLAS MicroMEGAS resistive. Atsuhiko Ochi 1 , Yasuhiro Homma 1 , Tsuyoshi Takemoto 1 , Fumiya Yamane 1 , Yousuke Kataoka 2 , Tatsuya Masubuchi 2 , Yuki Kawanishi 2 , Shingo Terao 2 Kobe University 1 , Univ. Tokyo ICEPP 2. - PowerPoint PPT Presentation

Transcript of Carbon sputtering technology for ATLAS MicroMEGAS resistive

Page 1: Carbon sputtering technology for ATLAS  MicroMEGAS  resistive

Carbon sputtering technology

for ATLAS MicroMEGAS resistive

Atsuhiko Ochi1, Yasuhiro Homma1, Tsuyoshi Takemoto1, Fumiya Yamane1, Yousuke Kataoka2,

Tatsuya Masubuchi2, Yuki Kawanishi2, Shingo Terao2

Kobe University1, Univ. Tokyo ICEPP2

06/02/2014 13th RD51 meeting@ CERN

Page 2: Carbon sputtering technology for ATLAS  MicroMEGAS  resistive

High position resolution for one dimension◦ <100 μm for eta direction.

(Resolution of a few cm is allowed for second coordinate.)

Tolerant for high rate HIP particles◦ ~ 5kHz/cm2

Resistive layer should be formed as strips

Resistivity: ~20MΩ/cm◦ To protect from spark

Mass production should be available, with large size (1m)◦ ~2000 board should be produced

in half year. Low cost

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Requirements for ATLAS NSW MM

+HV

Mesh(GND)

Page 3: Carbon sputtering technology for ATLAS  MicroMEGAS  resistive

Screen printing ◦ Already several prototypes (@ CERN and Japan) has

been produced.◦ Made from carbon loaded polymer.◦ Large size (>1m2) is available◦ 400 μm pitch was available for MAMMA production.

Carbon sputtering with liftoff process◦ New technique. (Since 2013)◦ Fine pattern (~10μm) is available.◦ Large size (>1m2) is available in industrial facilities.◦ Production quality is very well.

It is not affected by production environment

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Two option for resistive electrodes

Page 4: Carbon sputtering technology for ATLAS  MicroMEGAS  resistive

Very fine structure (a few tens micro meter) can be formed using photo resist. (same as PCB)

Surface resistivity can be controlled by sputtering material and their thickness

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Liftoff process using sputtering

Substrate (polyimide)

Photo resist(reverse pattern of surface strips)

Substrate (polyimide)

Metal/Carbon

sputtering

Substrate (polyimide)

Developing the resists

@PCB company(Laytech inc.)

@Sputtering company(Be-Sputter inc.)

@PCB company(Laytech inc.)

Page 5: Carbon sputtering technology for ATLAS  MicroMEGAS  resistive

June, 2013 – bulk MM◦ Surface resistivity: 10MΩ/sq.

With 300Ǻ carbon + 50Ǻ W November, 2013 – floating mesh

◦ Surface resistivity: 500kΩ/sq. With 3600Ǻ carbon

The readout board consists of Readout strips (Rigid PCB). Resistive strip foil (Polyimide film).

◦ Fine strip pitch of 200 μm is formed on 25μm polyimide foil.

◦ Substrate thickness : 60 μm.

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Prototype of small MicroMEGAS

Flexible foil (polyimide)

Rigid PCB (epoxy)

Resistive strips (sputtered)

Readout strips

Bonding film

MeshPillar

25μm

35μm

Substrate (polyimide)

Carbon (300-600Å)

Tungsten (10-50Å)

Page 6: Carbon sputtering technology for ATLAS  MicroMEGAS  resistive

Beamtests for sputtering MPGD Gain curve of 5.9 keV X-ray.

◦ Drift = -300V◦ Drift spacing: 5mm◦ Gas: Ar(93%) + CO2(7%)

Fast Neutron test for spark probability◦ @Kobe Univ.

17-23 Jun. 2013 20-27 Jan. 2014

◦ HV current log under intense neutron. Neutron intense : ~ 105 cps/cm2. 0.01V correspond to 1 μA ~600nA of base current was found

while beam ON.

Be(d, n)B480 490 500 510 520 530 540 550 560

1000

10000

100000

Gain1 μA

Very preliminary

neutro

n

Drift

-HV(~-300V)

Anode = ~500V

A

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Fast neutron test

Page 7: Carbon sputtering technology for ATLAS  MicroMEGAS  resistive

No damage is observed on the resistive strips after neutron test

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After sparks by neutrons

Page 8: Carbon sputtering technology for ATLAS  MicroMEGAS  resistive

SRS system

Cosmic test using 4 MMs◦ At Kobe Univ, Sept. 2013

1.4GeV electron beam◦ At Spring-8 BL33 beamline,

Nov. 2013

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Charged particle tracking

MM x 6 + Scintillators + APV25 x 12

Page 9: Carbon sputtering technology for ATLAS  MicroMEGAS  resistive

Requirements for carbon strips◦ Resistive control

20 MΩ/cm is required It correspond to 600kΩ/sq. for 300μm line width. Our first prototype has 10MΩ /sq. Thicker carbon sputter is required

Long time stability of resistivity The resistivity of early prototypes were growing up as time goes on

(~2%/day) It was thought that the oxidation of metal (tungsten layer) Is the carbon sputtering without metal layer possible?

◦ Mechanical / chemical robustness test Peeling off property (cross cut method) Resistive stability against the bending of the foil Chemical stabilities

For alkali and acid, used for PCB process.

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Further improvements and tests for carbon sputtering

Page 10: Carbon sputtering technology for ATLAS  MicroMEGAS  resistive

Resistivity dependence on carbon thickness◦ 300Ǻ 2GΩ/sq.◦ 3600Ǻ 500kΩ/sq.◦ Conductivity is not

proportional to the thickness (t < 1000Ǻ)

◦ At t > 1000Ǻ, good reproducibility found

New prototype:(delivered at September)◦ Carbon, 3600Ǻ◦ Surface resistivity ~

500kΩ/sq.◦ No time variation founds

after several days from sputtering

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Resistivity and it’s stability

Substrate (polyimide)

Carbon (3600Å)

No time variation founds

100 1000 100000.1

1

10

100

1000

10000

Max

Min

Preliminary

Cupper thickness [Ǻ]day

Surf

ace

Resi

stiv

ity [

/sq.]

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Adhesion test◦ Cross-cut test

(JIS k5400-8.5 standard, similar to the ISO 2409)

◦ No peeled carbon founded Bending test

◦ Bending diameter > 4cm No resistivity change found

◦ Jackknife bending Conductivity is lost

◦ Bending diameter = 1.2cm Outer wrap: resistivity is increased 10-20%

Inner wrap: no resistivity change

Mechanical robustnessfor thick sputtering carbon

Making cut lines as grid(11 x 11, 1mm pitch)

Tape up the foils strongly

Peel off the tape at once

Observe the tape and foils.

Cross-cut test  (JIS k5400-8.5)

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0.51MΩ/sq. 0.57M Ω/sq. (+12%)

0.44MΩ/sq. 0.44M Ω/sq. (0%)

Before bending

After bending

Before bending After bending

Page 12: Carbon sputtering technology for ATLAS  MicroMEGAS  resistive

Acid and alkali for PCB processing◦ Hydrochloric acid◦ Nitric acid◦ Sulfuric acid◦ Sodium carbonate

No damage on sputtered carbon◦ Sodium hydroxide

No damage for short dip Peeling is found after 90 minutes dipping

Almost all process of PCB production will not affect to the sputtering carbon

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Chemical robustnessfor new sputtering carbon

Page 13: Carbon sputtering technology for ATLAS  MicroMEGAS  resistive

We can divide the production process of resistive strip from that of readout board.◦ Resistive strip is formed on thin foil◦ We don’t need fine alignment between

resistive strips and readout strips. Dividing those processes will make the

yield of production growing up. We are preparing the large resistive

strip foil.◦ Size of foils: 500mm x 1000mm◦ 4 foils are need for a quadruplet

8 Foils (4 foils and 4 spare) were delivered to us at 25th October.◦ Some basic resistive parameters are

checked.◦ Those have been already come to CERN

Prototype of large MMs

Readout board

ResistiveStrip foil

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Page 14: Carbon sputtering technology for ATLAS  MicroMEGAS  resistive

PCB company◦ They are expert for FPC (Flexible Printed Circuit)

production.◦ Liftoff is basic process for FPC production

For patterning process: Laytech inc.

Exposure machines in clean room

Electro forming machines Etching machines

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Large size sputtering is available◦ 4.5m x 1m for flexible film

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Sputtering facilities

Vacuum chamber (with Ar gas)

Rotating drum4.5 m round

Sample

Sputteringtarget

Be-Sputter Co. Ltd.(Kyoto Japan)

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Large resistive strip foil866.4mm

425.3mm

Page 17: Carbon sputtering technology for ATLAS  MicroMEGAS  resistive

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Enlarged picture of resistive strip foil

10 mm

1 mm

0.3 mm

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We have no systematic way for resistivity test yet, so these results are based on rough measurements.

However, we have check surface resistivity on several points for 8 foils as figure.

The prove has about 2cm width.

Distance between proves are, A,B,C: 1.5-2.5 cm, D: 30 cm, E: cross over a center line.

“Inf” means more than 50MΩ.

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Resistivity check

A

BC

D

E

No. A B C D E1 1.4 4 15 6 Inf2 2.7 2.2 15 9.5 Inf3 1.5 2.2 13.1 8.3 Inf4 2.8 1.5 11 6.6 Inf5 2.2 1.8 10.5 6.3 Inf6 1.9 2.1 10 6.9 Inf7 2.5 2.3 10.6 7.4 Inf8 2.4 2.5 12.3 7.3 Inf

Unit: MΩ

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45.2 32.3 24.9 21 17.6 15.5

22.9 18.9 17.2 15.9 14 12.2

20.1 17.9 16.3 14.9 13.4 11.8

25.8 20.9 17.2 15.5 13.9 12.6 11

22.4 19.7 18.2 16.6 15.5 13.8 11.8

38.0

22.6 22.4 19.4 18.0 17.4 16.6 17.1

39.8 30.6 29.5 25.8 24.0 21.1 19.6 16

24.1 28.0 32.6 33.3 39.1 39.9

18.2 20.0 24.0 22.7 22.7 25.8

14.7 16.5 17.9 18.7 18.7 23

13.9 15.0 16.5 16.8 16.8 20.3 27.3

17.4 15.6 16.9 18.4 18.4 20.8 23.5

15.6 16.9 18.9 19.3 19.3 21.8 24.238.2

16.0 18.8 20.6 23.5 23.5 28.8 32.8 40.5

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Resistivity check Resistivity from edge to lattice point (5cm x

5cm) were measured (by Fabien Kuger).Foil: No.1, Unit: MΩ

ABCDEFG

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Comparison of different foils

Variability of ~ 30% were found for different foils◦ Reducing it is one of future issue

5 10 15 20 25 30 350.40

0.60

0.80

1.00

1.20

1.40

1.60

'Normalized' results along Line D (Side A)- comparison of different foils -

Foil 1 (18MΩ)

Foil 2 (25MΩ)

Foil 3 (24MΩ)

Foil 4 (25MΩ)

Foil 5 (18MΩ)

Foil 6 (21MΩ)

Foil 7 (27MΩ)

Foil 8 (24MΩ)

Distance to HV contact [cm]

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4 foils are attached to readout board successfully (at Rui’s workshop)◦ For making quadruplet prototype (MSW)◦ Resistivity did not change after gluing

Pillars will be formed soon

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With readout board

Page 22: Carbon sputtering technology for ATLAS  MicroMEGAS  resistive

Sputtering technology is very promising for making MPGD resistive electrodes◦ Fine structure (~10μm)◦ Large area ( a few meter)

Prototype of MicroMEGAS using sputtered resistive electrodes were produced and tested.◦ It works as same as conventional resistive strip MicroMEGAS◦ Gain curve, operation in HIP were tested. It’s OK.

Carbon sputtering process is improved for ATLAS MicroMEGAS◦ Appropriate resistivity ~ 500kΩ/sq with thick (3600Ǻ) sputtering.◦ Good mechanical/chemical properties

Large resistive strip foils (0.5m x 1m) are produced for functional prototype (MSW).◦ Qualitative resistivity check is ok.◦ The foils are already put on the readout board.◦ No resistivity change found before/after foil gluing.

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Conclusion