2000 Fairchild Semiconductor International Rev. A, February 2000

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NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings TC=25C unless otherwise noted

Electrical Characteristics TC=25C unless otherwise noted

hFE Classification

Symbol Parameter Value Units

VCBO Collector-Base Voltage 200 V

VCEO Collector-Emitter Voltage 200 V

VEBO Emitter-Base Voltage 5 V

IC Collector Current (DC) 100 mA

ICP Collector Current (Pulse) 200 mA

PC Collector Dissipation (TC=25C) 5 W

PC Collector Dissipation (Ta=25C) 1.2 W

TJ Junction Temperature 150 C

TSTG Storage Temperature - 55 ~ 150 C

Symbol Parameter Test Condition Min. Typ. Max. Units

BVCBO Collector-Base Breakdown Voltage IC = 10A, IE = 0 200 V BVCEO Collector-Emitter Breakdown Voltage IC = 1mA, IB = 0 200 V

BVEBO Emitter-Base Breakdown Voltage IE = 10A, IC = 0 5 V ICBO Collector Cut-off Current VCB = 150V, IE = 0 0.1 A IEBO Emitter Cut-off Current VEB = 4V, IC = 0 0.1 A hFE DC Current Gain VCE = 10V, IC = 10mA 40 320

VCE(sat) Collector-Emitter Saturation Voltage IC = 20mA, IB = 2mA 0.6 V

VBE(sat) Base-Emitter Saturation Voltage IC = 20mA, IB = 2mA 1 V

fT Current Gain Bandwidth Product VCE = 30V, IC = 10mA 150 MHz

Cob Output Capacitance VCB = 30V, f= 1MHz 1.7 pF

Cre Reverse Transfer Capacitance VCB = 30V, f= 1MHz 1.2 pF

Classification C D E F

hFE 40 ~ 80 60 ~ 120 100 ~ 200 160 ~ 320

KSC3502

CRT Display, Video Output High Voltage : VCEO=200V Low Reverse Transfer Capacitance: Cre=1.2pF @ VCB=30V

1 TO-126

1. Emitter 2.Collector 3.Base

2000 Fairchild Semiconductor International

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Rev. A, February 2000

Typical Characteristics

Figure 1. Static Characteristic Figure 2. Static Characteristic

Figure 3. DC current Gain Figure 4. Base-Emitter Saturation VoltageCollector-Emitter Saturation Voltage

Figure 5. Base-Emitter On Voltage Figure 6. Collector Output Capacitance

0 2 4 6 8 100

4

8

12

16

20IB = 160A

IB = 140A

IB = 120A

IB = 100A

IB = 80A

IB = 60A

IB = 40A

IB = 20A

IB = 0

I C[m

A],

CO

LLE

CT

OR

CU

RR

EN

T

VCE[V], COLLECTOR-EMITTER VOLTAGE

0 20 40 60 80 1000

2

4

6

8

10

IB = 80A

IB = 70AIB = 60A

IB = 50A

IB = 40A

IB = 30A

IB = 20A

IB = 10A

IB = 0

I C[m

A],

CO

LLE

CT

OR

CU

RR

EN

T

VCE[V], COLLECTOR-EMITTER VOLTAGE

0.1 1 10 100 10001

10

100

1000

VCE = 10V

hF

E,

DC

CU

RR

EN

T G

AIN

IC[mA], COLLECTOR CURRENT

0.1 1 10 1000.01

0.1

1

10

IC = 10 IB

VCE(sat)

VBE(sat)

V

BE(s

at)

, VC

E(s

at)

[V],

SA

TU

RA

TIO

N V

OLT

AG

E

IC[mA], COLLECTOR CURRENT

0.0 0.2 0.4 0.6 0.8 1.0 1.20

20

40

60

80

100

120

140

160

VCE = 10V

I C[m

A],

CO

LLE

CT

OR

CU

RR

EN

T

VBE[V], BASE-EMITTER VOLTAGE

0.1 1 10 100 10000.1

1

10

100

f = 1MHz

Co

b[p

F],

CA

PA

CIT

AN

CE

VCB[V], COLLECTOR-BASE VOLTAGE

2000 Fairchild Semiconductor International

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Rev. A, February 2000

Typical Characteristics (Continued)

Figure 7. Reverse Transfer Capacitance Figure 8. Current Gain Dandwidth Product

Figure 9. Safe Operating Area Figure 10. Power Derating

0.1 1 10 100 10000.1

1

10

100f=1MHz

Cre[p

F],

CA

PA

CIT

AN

CE

VCB[V], COLLECTOR-BASE VOLTAGE

0.1 1 10 100 10001

10

100

1000

VCE = 30V

f T[M

Hz]

, C

UR

RE

NT

GA

IN B

AN

DW

IDT

H P

RO

DU

CT

IC[mA], COLLECTOR CURRENT

1 10 100 10001

10

100

1000

DC (Ta = 25 o

C)

500s

10ms1ms

DC (Tc = 25 o

C)

IC MAX. (Pulse)

IC MAX.

I C[m

A],

CO

LLE

CT

OR

CU

RR

EN

T

VCE[V], COLLECTOR-EMITTER VOLTAGE

0 25 50 75 100 125 150 1750

1

2

3

4

5

6

7

8

Ta

Tc

P

C[W

], P

OW

ER

DIS

SIP

AT

ION

T[oC], TEMPERATURE

Package Demensions

2000 Fairchild Semiconductor International Rev. A, February 2000

KS

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502

Dimensions in Millimeters

3.25 0.208.00 0.30

3.20 0.10

0.75 0.10

#1

0.75 0.10

2.28TYP[2.280.20]

2.28TYP[2.280.20]

1.60 0.10

11.0

0 0

.20

3.90

0.

10

14.2

0MA

X

16.1

0 0

.20

13.0

6 0

.30

1.75 0.20

(0.50)(1.00)

0.50 +0.100.05

TO-126

2000 Fairchild Semiconductor International Rev. E

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and isnot intended to be an exhaustive list of all such trademarks.

ACExBottomlessCoolFETCROSSVOLTE2CMOSFACTFACT Quiet SeriesFAST

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SuperSOT-8SyncFETTinyLogicUHCVCX

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2. A critical component is any component of a life supportdevice or system whose failure to perform can bereasonably expected to cause the failure of the life supportdevice or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In Design

This datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.

Preliminary First Production This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.

No Identification Needed Full Production This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.