C

ZnO

kristall bindning

N st Si atoms

Filled; 2N electons

Filled; 2N + 6N

Filled; 2N

Filled; 2NUnfilled; 4N

N st Si atoms

Filled; 2N electons

Filled; 2N + 6N

Filled; 2N

Filled; 2NUnfilled; 4N

Eks: SiEks: GaAs

Par av e- og hull (h+) (EHP) !

Intrinsisk Si

Ekstrinsisk Si

N-type

P-type

Kvantbrunn

Fermifordelning i intrinsisk, n-type og p-type material

n

p

n = p

Schematic band diagram

Density of states

Fermi-Dirac distribution

Carrier concentration

RT

Variation of mobility as a

function of total doping

concentration (Na + Nd)

for Si, Ge and GaAs at

300 K

To materialer i likevekt

Hall effekt