BUK7Y38-100E - Nexperia BUK7Y38-100E...

download BUK7Y38-100E - Nexperia BUK7Y38-100E ¯MdR5dwtv¯](m(¯,Dqf(¯Ann¯wtSeco¯wdodwrdh Nexperia BUK7Y38-100E

of 13

  • date post

    11-Mar-2020
  • Category

    Documents

  • view

    4
  • download

    0

Embed Size (px)

Transcript of BUK7Y38-100E - Nexperia BUK7Y38-100E...

  • BUK7Y38-100E N-channel 100 V, 38 mΩ standard level MOSFET in LFPAK56 8 May 2013 Product data sheet

    1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.

    2. Features and benefits • Q101 compliant • Repetitive avalanche rated • Suitable for thermally demanding environments due to 175 °C rating • True standard level gate with VGS(th) rating of greater than 1 V at 175 °C

    3. Applications • 12 V, 24 V and 48 V Automotive systems • Motors, lamps and solenoid control • Transmission control • Ultra high performance power switching

    4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit

    VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 100 V

    ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 1 - - 30 A

    Ptot total power dissipation Tmb = 25 °C; Fig. 2 - - 95 W

    Static characteristics

    RDSon drain-source on-state resistance

    VGS = 10 V; ID = 5 A; Tj = 25 °C; Fig. 11 - 24.5 38 mΩ

    Dynamic characteristics

    QGD gate-drain charge VGS = 10 V; ID = 5 A; VDS = 80 V; Tj = 25 °C; Fig. 13; Fig. 14

    - 11.3 - nC

  • © Nexperia B.V. 2017. All rights reserved

    Nexperia BUK7Y38-100E N-channel 100 V, 38 mΩ standard level MOSFET in LFPAK56

    BUK7Y38-100E All information provided in this document is subject to legal disclaimers.

    Product data sheet 8 May 2013 2 / 13

    5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol

    1 S source

    2 S source

    3 S source

    4 G gate

    mb D mounting base; connected to drain

    mb

    1 2 3 4

    LFPAK56; Power- SO8 (SOT669)

    S

    D

    G

    mbb076

    6. Ordering information Table 3. Ordering information

    PackageType number

    Name Description Version

    BUK7Y38-100E LFPAK56; Power-SO8

    Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads

    SOT669

    7. Marking Table 4. Marking codes Type number Marking code

    BUK7Y38-100E 73810E

    8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit

    VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 100 V

    VDGR drain-gate voltage RGS = 20 kΩ - 100 V

    VGS gate-source voltage Tj ≤ 175 °C; DC -20 20 V

    Tmb = 25 °C; VGS = 10 V; Fig. 1 - 30 AID drain current

    Tmb = 100 °C; VGS = 10 V; Fig. 1 - 21 A

    IDM peak drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 4 - 120 A

    Ptot total power dissipation Tmb = 25 °C; Fig. 2 - 95 W

    Tstg storage temperature -55 175 °C

  • © Nexperia B.V. 2017. All rights reserved

    Nexperia BUK7Y38-100E N-channel 100 V, 38 mΩ standard level MOSFET in LFPAK56

    BUK7Y38-100E All information provided in this document is subject to legal disclaimers.

    Product data sheet 8 May 2013 3 / 13

    Symbol Parameter Conditions Min Max Unit

    Tj junction temperature -55 175 °C

    Source-drain diode

    IS source current Tmb = 25 °C - 30 A

    ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 120 A

    Avalanche ruggedness

    EDS(AL)S non-repetitive drain-source avalanche energy

    ID = 30 A; Vsup ≤ 100 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped; Fig. 3

    [1][2] - 45.2 mJ

    [1] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. [2] Refer to application note AN10273 for further information.

    003aai565

    0 30 60 90 120 150 180 0

    10

    20

    30

    40

    Tj (°C)

    IDID (A)(A)

    Fig. 1. Continuous drain current as a function of mounting base temperature

    Tmb (°C) 0 20015050 100

    03aa16

    40

    80

    120

    Pder (%)

    0

    Fig. 2. Normalized total power dissipation as a function of mounting base temperature

  • © Nexperia B.V. 2017. All rights reserved

    Nexperia BUK7Y38-100E N-channel 100 V, 38 mΩ standard level MOSFET in LFPAK56

    BUK7Y38-100E All information provided in this document is subject to legal disclaimers.

    Product data sheet 8 May 2013 4 / 13

    003aai566

    10-3 10-2 10-1 1 10 10-2

    10-1

    1

    10

    102

    tAL (ms)

    IALIAL (A)(A)

    (1)(1)

    (2)(2)

    (3)(3)

    Fig. 3. Avalanche rating; avalanche current as a function of avalanche time

    003aai567

    1 10 102 103 10-2

    10-1

    1

    10

    102

    103

    VDS (V)

    IDID (A)(A)

    DCDC

    100 ms100 ms 10 ms10 ms 1 ms1 ms

    100 us100 us

    tp = 10 ustp = 10 us

    Limit RDSon = VDS / IDLimit RDSon = VDS / ID

    Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

    9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit

    Rth(j-mb) thermal resistance from junction to mounting base

    Fig. 5 - - 1.58 K/W

  • © Nexperia B.V. 2017. All rights reserved

    Nexperia BUK7Y38-100E N-channel 100 V, 38 mΩ standard level MOSFET in LFPAK56

    BUK7Y38-100E All information provided in this document is subject to legal disclaimers.

    Product data sheet 8 May 2013 5 / 13

    003aai733

    10-6 10-5 10-4 10-3 10-2 10-1 1 10-2

    10-1

    1

    10

    tp (s)

    Zth(j-mb)Zth(j-mb) (K/W)(K/W)

    P

    ttp T

    tp δ = T

    single shotsingle shot

    δ = 0.5δ = 0.5

    0.20.2

    0.10.1

    0.050.05

    0.020.02

    Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration

    10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit

    Static characteristics

    ID = 250 µA; VGS = 0 V; Tj = 25 °C 100 - - VV(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = -55 °C 90 - - V

    ID = 1 mA; VDS = VGS; Tj = 25 °C; Fig. 9; Fig. 10

    2.4 3 4 V

    ID = 1 mA; VDS = VGS; Tj = -55 °C; Fig. 9

    - - 4.5 V

    VGS(th) gate-source threshold voltage

    ID = 1 mA; VDS = VGS; Tj = 175 °C; Fig. 9

    1 - - V

    VDS = 100 V; VGS = 0 V; Tj = 25 °C - 0.05 1 µAIDSS drain leakage current

    VDS = 100 V; VGS = 0 V; Tj = 175 °C - - 500 µA

    VGS = 20 V; VDS = 0 V; Tj = 25 °C - 2 100 nAIGSS gate leakage current

    VGS = -20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA

    VGS = 10 V; ID = 5 A; Tj = 25 °C; Fig. 11 - 24.5 38 mΩRDSon drain-source on-state resistance VGS = 10 V; ID = 5 A; Tj = 175 °C;

    Fig. 12; Fig. 11 - - 105 mΩ

    Dynamic characteristics

    QG(tot) total gate charge - 30.9 - nC

    QGS gate-source charge - 5 - nC

    QGD gate-drain charge

    ID = 5 A; VDS = 80 V; VGS = 10 V; Tj = 25 °C; Fig. 13; Fig. 14

    - 11.3 - nC

  • © Nexperia B.V. 2017. All rights reserved

    Nexperia BUK7Y38-100E N-channel 100 V, 38 mΩ standard level MOSFET in LFPAK56

    BUK7Y38-100E All information provided in this document is subject to legal disclaimers.

    Product data sheet 8 May 2013 6 / 13

    Symbol Parameter Conditions Min Typ Max Unit

    Ciss input capacitance - 1293 1720 pF

    Coss output capacitance - 145 174 pF

    Crss reverse transfer capacitance

    VGS = 0 V; VDS = 25 V; f = 1 MHz; Tj = 25 °C; Fig. 15

    - 109 149 pF

    td(on) turn-on delay time - 6.6 - ns

    tr rise time - 9.9 - ns

    td(off) turn-off delay time - 22 - ns

    tf fall time

    VDS = 80 V; RL = 10 Ω; VGS = 10 V; RG(ext) = 5 Ω; Tj = 25 °C

    - 12.6 - ns

    Source-drain diode

    VSD source-drain voltage IS = 5 A; VGS = 0 V; Tj = 25 °C; Fig. 16 - 0.79 1.2 V

    trr reverse recovery time - 34.2 - ns

    Qr recovered charge

    IS = 10 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 25 V - 45.5 - nC

    003aai569

    0 1.5 3 4.5 6 0

    16

    32

    48

    64

    80

    VDS (V)

    IDID (A)(A)

    VGS = 4 VVGS = 4 V

    4.5 V4.5 V

    5 V5 V

    5.5 V5.5 V

    6 V6 V10 V10 V

    Tj = 25 °C; tp = 300 μs

    Fig. 6. Output characteristics; drain current as a function of drain-source voltage; typical values

    003aai570

    0 4 8 12 16 20 0

    20

    40

    60

    80

    100

    VGS (V)

    RDSonRDSon

    Fig. 7. Drain-source on-state resistance as a function of gate-source voltage; typical values

  • © Nexperia B.V. 2017. All rights reserved

    Nexperia BUK7Y38-100E N-channel 100 V, 38 mΩ standard level MOSFET in LFPAK56

    BUK7Y38-100E All information provided in this document is subject to legal disclaimers.

    Product data sheet 8 May 2013 7 / 13

    003aai572

    0 1 2 3 4 5 6 0

    10

    20

    30

    40

    50

    VGS (V)

    IDID (A)(A)

    Tj = 25°CTj = 25°C

    175°C175°C

    Fig. 8. Transfer characteristics; drain current as a function of gate-source voltage; typical values

    003aah027

    0

    1

    2

    3

    4

    5

    -60 0 60 120 180 Tj (°C)

    VGS(th) (V)

    max

    typ

    min

    Fig. 9. Gate-source threshold voltage as a function of junction temperature

    003aah028