BUK768R1-100E · BUK768R1-100E N-channel TrenchMOS standard level FET 5 October 2012 Product data...

BUK768R1-100EN-channel TrenchMOS standard level FET5 October 2012 Product data sheet

1. Product profile

1.1 General descriptionStandard level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.

1.2 Features and benefits• AEC Q101 compliant• Repetitive avalanche rated• Suitable for thermally demanding environments due to 175 °C rating• True standard level gate with VGS(th) rating of greater than 1V at 175 °C

1.3 Applications• 12V, 24V and 48V Automotive systems• Electric and electro-hydraulic power steering• Motors, lamps and solenoid control• Start-Stop micro-hybrid applications• Transmission control• Ultra high performance power switching

1.4 Quick reference dataTable 1. Quick reference dataSymbol Parameter Conditions Min Typ Max Unit

VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 100 V

ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 1 [1] - - 100 A

Ptot total power dissipation Tmb = 25 °C; Fig. 2 - - 263 W

Static characteristics

RDSon drain-source on-stateresistance

VGS = 10 V; ID = 25 A; Tj = 25 °C;Fig. 11

- 6.4 8.1 mΩ

Dynamic characteristics

QGD gate-drain charge VGS = 10 V; ID = 25 A; VDS = 80 V;Tj = 25 °C; Fig. 13; Fig. 14

- 38.6 - nC

[1] Continuous current is limited by package.

© Nexperia B.V. 2017. All rights reserved

Nexperia BUK768R1-100EN-channel TrenchMOS standard level FET

BUK768R1-100E All information provided in this document is subject to legal disclaimers.

Product data sheet 5 October 2012 2 / 13

2. Pinning informationTable 2. Pinning informationPin Symbol Description Simplified outline Graphic symbol

1 G gate

2 D drain

3 S source

mb D mounting base; connected todrain

mb

1 3

2

D2PAK (SOT404)

S

D

G

mbb076

3. Ordering informationTable 3. Ordering information

PackageType number

Name Description Version

BUK768R1-100E D2PAK plastic single-ended surface-mounted package (D2PAK); 3 leads(one lead cropped)

SOT404

4. MarkingTable 4. Marking codesType number Marking code

BUK768R1-100E BUK768R1-100E

5. Limiting valuesTable 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 100 V

VDGR drain-gate voltage RGS = 20 kΩ - 100 V

VGS gate-source voltage Tj ≤ 175 °C; DC -20 20 V

Tmb = 25 °C; VGS = 10 V; Fig. 1 [1] - 100 AID drain current

Tmb = 100 °C; VGS = 10 V; Fig. 1 - 78 A

IDM peak drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 4 - 439 A

Ptot total power dissipation Tmb = 25 °C; Fig. 2 - 263 W

Tstg storage temperature -55 175 °C

Tj junction temperature -55 175 °C





Symbol Parameter Conditions Min Max Unit

Source-drain diode

IS source current Tmb = 25 °C [1] - 100 A

ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 439 A

Avalanche ruggedness

EDS(AL)S non-repetitive drain-sourceavalanche energy

ID = 100 A; Vsup ≤ 100 V; RGS = 50 Ω;VGS = 10 V; Tj(init) = 25 °C; unclamped;Fig. 3

[2][3] - 219 mJ

[1] Continuous current is limited by package.[2] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.[3] Refer to application note AN10273 for further information.

003aah735

0

40

80

120

0 50 100 150 200Tmb(°C)

ID(A)

(1)

(1) Capped at 120A due to package

Fig. 1. Continuous drain current as a function ofmounting base temperature

Tmb (°C)0 20015050 100

03aa16

40

80

120

Pder(%)

0

Fig. 2. Normalized total power dissipation as afunction of mounting base temperature





003aah736

10-1

1

10

102

103

10-3 10-2 10-1 1 10tAL(ms)

IAL(A)

(1)

(2)

(3)

Fig. 3. Avalanche rating; avalanche current as a function of avalanche time

003aah737

10-1

1

10

102

103

1 10 102 103VDS(V)

ID(A) Limit RDSon= VDS/ ID

DC

100 µs

10 ms

tp =10 µs

100 ms

1 ms

Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

6. Thermal characteristicsTable 6. Thermal characteristicsSymbol Parameter Conditions Min Typ Max Unit

Rth(j-mb) thermal resistancefrom junction tomounting base

Fig. 5 - - 0.57 K/W

Rth(j-a) thermal resistancefrom junction toambient

minimum footprint ; mounted on aprinted-circuit board

- 50 - K/W





003aah108

single shot

0.2

0.1

0.05

10-3

10-2

10-1

1

10-6 10-5 10-4 10-3 10-2 10-1 1tp (s)

Zth(j-mb)(K/W)

δ = 0.5

0.02

tpT

P

t

tpT

δ =

Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration

7. CharacteristicsTable 7. CharacteristicsSymbol Parameter Conditions Min Typ Max Unit

Static characteristics

ID = 250 µA; VGS = 0 V; Tj = 25 °C 100 - - VV(BR)DSS drain-sourcebreakdown voltage ID = 250 µA; VGS = 0 V; Tj = -55 °C 90 - - V

ID = 1 mA; VDS = VGS; Tj = 25 °C;Fig. 9; Fig. 10

2.4 3 4 V

ID = 1 mA; VDS = VGS; Tj = 175 °C;Fig. 9

1 - - V

VGS(th) gate-source thresholdvoltage

ID = 1 mA; VDS = VGS; Tj = -55 °C;Fig. 9

- - 4.5 V

VDS = 100 V; VGS = 0 V; Tj = 25 °C - 0.02 1 µAIDSS drain leakage current

VDS = 100 V; VGS = 0 V; Tj = 175 °C - - 500 µA

VGS = 20 V; VDS = 0 V; Tj = 25 °C - 2 100 nAIGSS gate leakage current

VGS = -20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA

VGS = 10 V; ID = 25 A; Tj = 25 °C;Fig. 11

- 6.4 8.1 mΩRDSon drain-source on-stateresistance

VGS = 10 V; ID = 25 A; Tj = 175 °C;Fig. 11; Fig. 12

- - 21.9 mΩ

Dynamic characteristics

QG(tot) total gate charge - 108 - nC

QGS gate-source charge - 22.8 - nC

QGD gate-drain charge

ID = 25 A; VDS = 80 V; VGS = 10 V;Tj = 25 °C; Fig. 13; Fig. 14

- 38.6 - nC





Symbol Parameter Conditions Min Typ Max Unit

Ciss input capacitance - 5535 7380 pF

Coss output capacitance - 521 625 pF

Crss reverse transfercapacitance

VGS = 0 V; VDS = 25 V; f = 1 MHz;Tj = 25 °C; Fig. 15

- 352 482 pF

td(on) turn-on delay time - 23.5 - ns

tr rise time - 44.1 - ns

td(off) turn-off delay time - 72 - ns

tf fall time

VDS = 80 V; RL = 3.2 Ω; VGS = 10 V;RG(ext) = 5 Ω

- 49.6 - ns

LD internal draininductance

from upper edge of mounting base tocentre of die

- 2.5 - nH

LS internal sourceinductance

measured from source lead to sourcebond pad ; Tj = 25 °C

- 7.5 - nH

Source-drain diode

VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 16 - 0.82 1.2 V

trr reverse recovery time - 55 - ns

Qr recovered charge

IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;VDS = 25 V - 134 - nC

003aah739

0

60

120

180

240

0 2 4 6VDS(V)

ID(A)

VGS(V) = 10

4.5

5

6

4

5.5

Tj = 25 °C; tp = 300 μs

Fig. 6. Output characteristics; drain current as afunction of drain-source voltage; typical values

003aah740

0

5

10

15

20

0 5 10 15 20VGS(V)

RDSon(mΩ)

Fig. 7. Drain-source on-state resistance as a functionof gate-source voltage; typical values





003aah742

0

50

100

150

200

250

0 2 4 6 8 10VGS (V)

ID(A)

Tj = 25 °C

Tj = 175 °C

Fig. 8. Transfer characteristics; drain current as afunction of gate-source voltage; typical values

003aah027

0

1

2

3

4

5

-60 0 60 120 180Tj (°C)

VGS(th)(V)

max

typ

min

Fig. 9. Gate-source threshold voltage as a function ofjunction temperature

003aah028

10-6

10-5

10-4

10-3

10-2

10-1

0 2 4 6VGS(V)

ID(A)

maxtypmin

Fig. 10. Sub-threshold drain current as a function ofgate-source voltage

003aah745

0

5

10

15

20

25

0 80 160 240ID(A)

RDSon(mΩ)

VGS(V) = 10

54.5 5.5

6

Tj = 25 °C; tp = 300 μs

Fig. 11. Drain-source on-state resistance as a functionof drain current; typical values





003aag818

0

0.6

1.2

1.8

2.4

3

-60 0 60 120 180Tj (°C)

a

Fig. 12. Normalized drain-source on-state resistancefactor as a function of junction temperature

003aah747

0

2

4

6

8

10

0 40 80 120QG (nC)

VGS(V)

VDS= 80V

14 V

Fig. 13. Gate-source voltage as a function of gatecharge; typical values

003aaa508

VGS

VGS(th)

QGS1 QGS2

QGD

VDS

QG(tot)

ID

QGS

VGS(pl)

Fig. 14. Gate charge waveform definitions

003aah748

102

103

104

10-1 1 10 102VDS(V)

C(pF)

Ciss

Crss

Coss

Fig. 15. Input, output and reverse transfer capacitancesas a function of drain-source voltage; typicalvalues





003aah749

0

80

160

240

320

400

0 0.4 0.8 1.2 1.6VSD(V)

IS(A)

Tj = 25 °C

Tj = 175°C

Fig. 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values





8. Package outline

UNIT A

REFERENCESOUTLINEVERSION

EUROPEANPROJECTION ISSUE DATEIEC JEDEC JEITA

mm

A1 D1D

max. E e Lp HD Qc

2.54 2.602.20

15.8014.80

2.902.10

11 1.601.20

10.309.70

4.504.10

1.401.27

0.850.60

0.640.46

b

DIMENSIONS (mm are the original dimensions)

SOT404

0 2.5 5 mm

scale

Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) SOT404

e e

E

b

D1

HD

D

Q

Lp

c

A1

A

1 3

2

mountingbase

05-02-1106-03-16

Fig. 17. Package outline D2PAK (SOT404)





9. Legal information

9.1 Data sheet statusDocumentstatus [1][2]

Productstatus [3]

Definition

Objective[short] datasheet

Development This document contains data fromthe objective specification for productdevelopment.

Preliminary[short] datasheet

Qualification This document contains data from thepreliminary specification.

Product[short] datasheet

Production This document contains the productspecification.

[1] Please consult the most recently issued document before initiating orcompleting a design.

[2] The term 'short data sheet' is explained in section "Definitions".[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case ofmultiple devices. The latest product status information is available onthe Internet at URL http://www.nexperia.com.

9.2 DefinitionsPreview — The document is a preview version only. The document is stillsubject to formal approval, which may result in modifications or additions.Nexperia does not give any representations or warranties as tothe accuracy or completeness of information included herein and shall haveno liability for the consequences of use of such information.

Draft — The document is a draft version only. The content is still underinternal review and subject to formal approval, which may result inmodifications or additions. Nexperia does not give anyrepresentations or warranties as to the accuracy or completeness ofinformation included herein and shall have no liability for the consequencesof use of such information.

Short data sheet — A short data sheet is an extract from a full data sheetwith the same product type number(s) and title. A short data sheet isintended for quick reference only and should not be relied upon to containdetailed and full information. For detailed and full information see therelevant full data sheet, which is available on request via the local Nexperiasales office. In case of any inconsistency or conflict with theshort data sheet, the full data sheet shall prevail.

Product specification — The information and data provided in a Productdata sheet shall define the specification of the product as agreed betweenNexperia and its customer, unless Nexperia andcustomer have explicitly agreed otherwise in writing. In no event however,shall an agreement be valid in which the Nexperia productis deemed to offer functions and qualities beyond those described in theProduct data sheet.

9.3 DisclaimersLimited warranty and liability — Information in this document is believedto be accurate and reliable. However, Nexperia does not giveany representations or warranties, expressed or implied, as to the accuracyor completeness of such information and shall have no liability for theconsequences of use of such information. Nexperia takes noresponsibility for the content in this document if provided by an informationsource outside of Nexperia.

In no event shall Nexperia be liable for any indirect, incidental,punitive, special or consequential damages (including - without limitation -lost profits, lost savings, business interruption, costs related to the removalor replacement of any products or rework charges) whether or not suchdamages are based on tort (including negligence), warranty, breach ofcontract or any other legal theory.

Notwithstanding any damages that customer might incur for any reasonwhatsoever, Nexperia’s aggregate and cumulative liability towardscustomer for the products described herein shall be limited in accordancewith the Terms and conditions of commercial sale of Nexperia.

Right to make changes — Nexperia reserves the right tomake changes to information published in this document, including withoutlimitation specifications and product descriptions, at any time and withoutnotice. This document supersedes and replaces all information supplied priorto the publication hereof.

Suitability for use in automotive applications — This Nexperiaproduct has been qualified for use in automotiveapplications. Unless otherwise agreed in writing, the product is not designed,authorized or warranted to be suitable for use in life support, life-critical orsafety-critical systems or equipment, nor in applications where failure ormalfunction of a Nexperia product can reasonably be expectedto result in personal injury, death or severe property or environmentaldamage. Nexperia and its suppliers accept no liability forinclusion and/or use of Nexperia products in such equipment orapplications and therefore such inclusion and/or use is at the customer's ownrisk.

Quick reference data — The Quick reference data is an extract of theproduct data given in the Limiting values and Characteristics sections of thisdocument, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of theseproducts are for illustrative purposes only. Nexperia makes norepresentation or warranty that such applications will be suitable for thespecified use without further testing or modification.

Customers are responsible for the design and operation of theirapplications and products using Nexperia products, and Nexperiaaccepts no liability for any assistance with applications orcustomer product design. It is customer’s sole responsibility to determinewhether the Nexperia product is suitable and fit for thecustomer’s applications and products planned, as well as for the plannedapplication and use of customer’s third party customer(s). Customers shouldprovide appropriate design and operating safeguards to minimize the risksassociated with their applications and products.

Nexperia does not accept any liability related to any default,damage, costs or problem which is based on any weakness or defaultin the customer’s applications or products, or the application or use bycustomer’s third party customer(s). Customer is responsible for doing allnecessary testing for the customer’s applications and products using Nexperiaproducts in order to avoid a default of the applicationsand the products or of the application or use by customer’s third partycustomer(s). Nexperia does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined inthe Absolute Maximum Ratings System of IEC 60134) will cause permanentdamage to the device. Limiting values are stress ratings only and (proper)operation of the device at these or any other conditions above thosegiven in the Recommended operating conditions section (if present) or theCharacteristics sections of this document is not warranted. Constant orrepeated exposure to limiting values will permanently and irreversibly affectthe quality and reliability of the device.

Terms and conditions of commercial sale — Nexperiaproducts are sold subject to the general terms and conditions of commercialsale, as published at http://www.nexperia.com/profile/terms, unless otherwiseagreed in a valid written individual agreement. In case an individualagreement is concluded only the terms and conditions of the respectiveagreement shall apply. Nexperia hereby expressly objects toapplying the customer’s general terms and conditions with regard to thepurchase of Nexperia products by customer.

http://www.nexperia.com/profile/terms





No offer to sell or license — Nothing in this document may be interpretedor construed as an offer to sell products that is open for acceptance or thegrant, conveyance or implication of any license under any copyrights, patentsor other industrial or intellectual property rights.

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Translations — A non-English (translated) version of a document is forreference only. The English version shall prevail in case of any discrepancybetween the translated and English versions.

9.4 TrademarksNotice: All referenced brands, product names, service names andtrademarks are the property of their respective owners.





10. Contents1 Product profile ....................................................... 11.1 General description .............................................. 11.2 Features and benefits ...........................................11.3 Applications .......................................................... 11.4 Quick reference data ............................................ 12 Pinning information ...............................................23 Ordering information .............................................24 Marking ................................................................... 25 Limiting values .......................................................26 Thermal characteristics .........................................47 Characteristics .......................................................58 Package outline ................................................... 109 Legal information .................................................119.1 Data sheet status ............................................... 119.2 Definitions ...........................................................119.3 Disclaimers .........................................................119.4 Trademarks ........................................................ 12

© Nexperia B.V. 2017. All rights reservedFor more information, please visit: http://www.nexperia.comFor sales office addresses, please send an email to: [email protected] Date of release: 05 October 2012

1. Product profile2. Pinning information3. Ordering information4. Marking5. Limiting values6. Thermal characteristics7. Characteristics8. Package outline9. Legal information

BUK768R1-100E · BUK768R1-100E N-channel TrenchMOS standard level FET 5 October 2012 Product data...

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