BUK768R1-100E BUK768R1-100E N-channel TrenchMOS standard level FET 5 October 2012 Product data sheet

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Transcript of BUK768R1-100E BUK768R1-100E N-channel TrenchMOS standard level FET 5 October 2012 Product data sheet

  • BUK768R1-100E N-channel TrenchMOS standard level FET 5 October 2012 Product data sheet

    1. Product profile

    1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.

    1.2 Features and benefits • AEC Q101 compliant • Repetitive avalanche rated • Suitable for thermally demanding environments due to 175 °C rating • True standard level gate with VGS(th) rating of greater than 1V at 175 °C

    1.3 Applications • 12V, 24V and 48V Automotive systems • Electric and electro-hydraulic power steering • Motors, lamps and solenoid control • Start-Stop micro-hybrid applications • Transmission control • Ultra high performance power switching

    1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit

    VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 100 V

    ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 1 [1] - - 100 A

    Ptot total power dissipation Tmb = 25 °C; Fig. 2 - - 263 W

    Static characteristics

    RDSon drain-source on-state resistance

    VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 11

    - 6.4 8.1 mΩ

    Dynamic characteristics

    QGD gate-drain charge VGS = 10 V; ID = 25 A; VDS = 80 V; Tj = 25 °C; Fig. 13; Fig. 14

    - 38.6 - nC

    [1] Continuous current is limited by package.

  • © Nexperia B.V. 2017. All rights reserved

    Nexperia BUK768R1-100E N-channel TrenchMOS standard level FET

    BUK768R1-100E All information provided in this document is subject to legal disclaimers.

    Product data sheet 5 October 2012 2 / 13

    2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol

    1 G gate

    2 D drain

    3 S source

    mb D mounting base; connected to drain

    mb

    1 3

    2

    D2PAK (SOT404)

    S

    D

    G

    mbb076

    3. Ordering information Table 3. Ordering information

    PackageType number

    Name Description Version

    BUK768R1-100E D2PAK plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped)

    SOT404

    4. Marking Table 4. Marking codes Type number Marking code

    BUK768R1-100E BUK768R1-100E

    5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit

    VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 100 V

    VDGR drain-gate voltage RGS = 20 kΩ - 100 V

    VGS gate-source voltage Tj ≤ 175 °C; DC -20 20 V

    Tmb = 25 °C; VGS = 10 V; Fig. 1 [1] - 100 AID drain current

    Tmb = 100 °C; VGS = 10 V; Fig. 1 - 78 A

    IDM peak drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 4 - 439 A

    Ptot total power dissipation Tmb = 25 °C; Fig. 2 - 263 W

    Tstg storage temperature -55 175 °C

    Tj junction temperature -55 175 °C

  • © Nexperia B.V. 2017. All rights reserved

    Nexperia BUK768R1-100E N-channel TrenchMOS standard level FET

    BUK768R1-100E All information provided in this document is subject to legal disclaimers.

    Product data sheet 5 October 2012 3 / 13

    Symbol Parameter Conditions Min Max Unit

    Source-drain diode

    IS source current Tmb = 25 °C [1] - 100 A

    ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 439 A

    Avalanche ruggedness

    EDS(AL)S non-repetitive drain-source avalanche energy

    ID = 100 A; Vsup ≤ 100 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped; Fig. 3

    [2][3] - 219 mJ

    [1] Continuous current is limited by package. [2] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. [3] Refer to application note AN10273 for further information.

    003aah735

    0

    40

    80

    120

    0 50 100 150 200Tmb(°C)

    ID (A)

    (1)

    (1) Capped at 120A due to package

    Fig. 1. Continuous drain current as a function of mounting base temperature

    Tmb (°C) 0 20015050 100

    03aa16

    40

    80

    120

    Pder (%)

    0

    Fig. 2. Normalized total power dissipation as a function of mounting base temperature

  • © Nexperia B.V. 2017. All rights reserved

    Nexperia BUK768R1-100E N-channel TrenchMOS standard level FET

    BUK768R1-100E All information provided in this document is subject to legal disclaimers.

    Product data sheet 5 October 2012 4 / 13

    003aah736

    10-1

    1

    10

    102

    103

    10-3 10-2 10-1 1 10tAL(ms)

    IAL (A)

    (1)

    (2)

    (3)

    Fig. 3. Avalanche rating; avalanche current as a function of avalanche time

    003aah737

    10-1

    1

    10

    102

    103

    1 10 102 103 VDS(V)

    ID (A) Limit RDSon= VDS/ ID

    DC

    100 µs

    10 ms

    tp =10 µs

    100 ms

    1 ms

    Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

    6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit

    Rth(j-mb) thermal resistance from junction to mounting base

    Fig. 5 - - 0.57 K/W

    Rth(j-a) thermal resistance from junction to ambient

    minimum footprint ; mounted on a printed-circuit board

    - 50 - K/W

  • © Nexperia B.V. 2017. All rights reserved

    Nexperia BUK768R1-100E N-channel TrenchMOS standard level FET

    BUK768R1-100E All information provided in this document is subject to legal disclaimers.

    Product data sheet 5 October 2012 5 / 13

    003aah108

    single shot

    0.2

    0.1

    0.05

    10-3

    10-2

    10-1

    1

    10-6 10-5 10-4 10-3 10-2 10-1 1tp (s)

    Zth(j-mb) (K/W)

    δ = 0.5

    0.02

    tp T

    P

    t

    tp T

    δ =

    Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration

    7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit

    Static characteristics

    ID = 250 µA; VGS = 0 V; Tj = 25 °C 100 - - VV(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = -55 °C 90 - - V

    ID = 1 mA; VDS = VGS; Tj = 25 °C; Fig. 9; Fig. 10

    2.4 3 4 V

    ID = 1 mA; VDS = VGS; Tj = 175 °C; Fig. 9

    1 - - V

    VGS(th) gate-source threshold voltage

    ID = 1 mA; VDS = VGS; Tj = -55 °C; Fig. 9

    - - 4.5 V

    VDS = 100 V; VGS = 0 V; Tj = 25 °C - 0.02 1 µAIDSS drain leakage current

    VDS = 100 V; VGS = 0 V; Tj = 175 °C - - 500 µA

    VGS = 20 V; VDS = 0 V; Tj = 25 °C - 2 100 nAIGSS gate leakage current

    VGS = -20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA

    VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 11

    - 6.4 8.1 mΩRDSon drain-source on-state resistance

    VGS = 10 V; ID = 25 A; Tj = 175 °C; Fig. 11; Fig. 12

    - - 21.9 mΩ

    Dynamic characteristics

    QG(tot) total gate charge - 108 - nC

    QGS gate-source charge - 22.8 - nC

    QGD gate-drain charge

    ID = 25 A; VDS = 80 V; VGS = 10 V; Tj = 25 °C; Fig. 13; Fig. 14

    - 38.6 - nC

  • © Nexperia B.V. 2017. All rights reserved

    Nexperia BUK768R1-100E N-channel TrenchMOS standard level FET

    BUK768R1-100E All information provided in this document is subject to legal disclaimers.

    Product data sheet 5 October 2012 6 / 13

    Symbol Parameter Conditions Min Typ Max Unit

    Ciss input capacitance - 5535 7380 pF

    Coss output capacitance - 521 625 pF

    Crss reverse transfer capacitance

    VGS = 0 V; VDS = 25 V; f = 1 MHz; Tj = 25 °C; Fig. 15

    - 352 482 pF

    td(on) turn-on delay time - 23.5 - ns

    tr rise time - 44.1 - ns

    td(off) turn-off delay time - 72 - ns

    tf fall time

    VDS = 80 V; RL = 3.2 Ω; VGS = 10 V; RG(ext) = 5 Ω

    - 49.6 - ns

    LD internal drain inductance

    from upper edge of mounting base to centre of die

    - 2.5 - nH

    LS internal source inductance

    measured from source lead to source bond pad ; Tj = 25 °C

    - 7.5 - nH

    Source-drain diode

    VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 16 - 0.82 1.2 V

    trr reverse recovery time - 55 - ns

    Qr recovered charge

    IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 25 V - 134 - nC

    003aah739

    0

    60

    120

    180

    240

    0 2 4 6VDS(V)

    ID (A)

    VGS(V) = 10

    4.5

    5

    6

    4

    5.5

    Tj = 25 °C; tp = 300 μs

    Fig. 6. Output characteristics; drain current as a function of drain-source voltage; typical values

    003aah740

    0

    5

    10

    15

    20

    0 5 10 15 20VGS(V)

    RDSon (mΩ)

    Fig. 7. Drain-source on-state resistance as a function of gate-source voltage; typical values

  • © Nexperia B.V. 2017. All rights reserved

    Nexperia BUK768R1-100E N-channel TrenchMOS standard level FET

    BUK768R1-100E All information provided in this document is subject to legal disclaimers.

    Product data sheet 5 October 2012 7 / 13

    003aah742

    0

    50

    100

    150

    200

    250

    0 2 4 6 8 10 VGS (V)

    ID (A)

    Tj = 25 °C

    Tj = 175 °C

    Fig. 8. Transfer charac