BREAKDOWN VOLTAGE OF SILICON DIOXIDE(Microelectronics Technology)Advisor: Prof. Nguyen Đuc ChienStudents: Nguyen Minh - 20132586

Nguyen Van Long - 20132393

Hoang Tuan Linh - 20132263Hanoi, Oct 21st 2016

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CONTENTS

1.Thermal SiO2 Properties2.Review of breakdown of silicon dioxide layer3.Dielectric strength measurement4.Time-dependent breakdown voltage5.Application of Breakdown Voltage

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1. THERMAL SiO2 PROPERTIES

(1) Excellent Electrical Insulator (2) High breakdown Electric Field (>10MV/cm) (3) Stable and Reproducible Si/SiO2 Interface (4) Conformal oxide growth on exposed Si surface (5) Good dissusion mask for common dopants (6) Very good etching selectivity between Si and SiO2

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II. REVIEW OF BREAKDOWN OF SILICON DIOXIDE LAYER

Breakdown VoltageBreakdown Voltage is defined experimentaily as the

exceeding of a preset current2 breakdown measures:

- Fast voltage ramp (dielectric strength)- Constant voltage wearout

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III. DIELECTRIC STRENGTH MEASUREMENTDielectric strength = the field at which it would break down

Itr = the current chosen to define breakdown

IBD = the current at breakdown

Rsi = resistance in the measurement circuit

tbd = time-to-breakdown

Extrapolation of a plot of tbd versus I to zero time gave IBD. VBD could be caculated from this technique via the equation for Fowler-Nordheim tunneling (log(J/E^2) ~ 1/E):

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IV. TIME-DEPENDENT BREAKDOWN VOLTAGE- Consists of the application of a constant

voltage and measuring the time to breakdown

- TDDB (Time-Dependent Dielectric Breakdown)

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IV. TIME-DEPENDENT BREAKDOWN VOLTAGE

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V. APPLICATION OF BREAKDOWN VOLTAGE

Variation in EBD with oxide thickness

Breakdown voltage => thickness of the SiO2 layerE = V/d

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THANKS FOR YOUR LISTENING!

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Q&A

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III. DIELECTRIC STRENGTH MEASUREMENT