BIST, BIHER, Bharath University,Chennai -73Effect of Eu 3+ ions on structural, optical and...

Effect of Eu3+

ions on structural, optical and morphological properties of electrochemically

deposited ZnSe thin films

D.Manikandan1, V.Jeyachandran2,A.Manikandan3 1, 2,3AssociateProfessor, Department of Chemistry,

BIST, BIHER, Bharath University,Chennai-73 [email protected]

Abstract

Semiconductor ZnSe thin film were deposited on ITO coated contacting glass substrate

together with Eu3+

ions by using electrochemical deposition (ECD) technique in an aqueous

electrolyte bath at a low temperature of 50°C. The bath solution maintains with five different

concentration of Eu solution, the concentration on the properties of ZnSe films has been studied.

The voltammetric curves were obtained from cyclic voltammetric (CV) and linear sweep

voltammetric (LSV) in order to study the electrochemical behavior of ZnSO4/Se2-

system on the

different concentration of Eu3+

ions in reaction bath. From the X-ray diffraction study confirmed

that the crystalline structure of as-deposited ZnSe thin films is cubic zinc bland structure and

hexagonal wurtzite structure. The SEM image results reveal that the films have been large

number of uniform spherical grains and smooth back ground also observed. The average optical

band gap value of the as-deposited ZnSe thin films were recorded in the range between 2.98eV

and 3.56eV respectively, these values are obtained from the Tauc’s plot. Room temperature

photoluminescence and Raman spectroscopic studies were also recorded and these results are

discussed.

Keywords: Electrochemical deposition, voltammetric, crystalline structure and optical band gap

value.

1. Introduction

In the resent year there has been increasing interest in the new development of Zn based

nanostructures are widely investigated. In particular, ZnSe based materials suitable for the

application in thin film solar cells as the window material [1]. Also it has potential application

such as high-density optical storage, full color display, light emitting devices, laser screens and

thin film transistor [2,3]. ZnSe has a large band gap (2.7eV) semiconducting material it can be

used to replacement for CdS material in photovoltaic cell [4]. A number of techniques use to

high quality of ZnSe thin film deposit such as physical vapor deposition[5], metal organic

chemical vapor deposition [6], vacuum deposition [7], molecular beam epitaxy [8], vacuum

evaporation [9], chemical bath deposition [10], sputtering [11] and electrodeposition method

[12] are some of well investigate method for the deposition of ZnSe thin films. However, in the

last few year electrochemical deposition technique has emerged as a simple and viable technique

which growing well adhere and quality of thin film for the photoelectronic devices. Also it has

more promising option like simpleness, low energy consumption, practicality, low cost and

International Journal of Pure and Applied MathematicsVolume 119 No. 12 2018, 3799-3821ISSN: 1314-3395 (on-line version)url: http://www.ijpam.euSpecial Issue ijpam.eu

3799

accurate control of films thickness, morphology and composition of thin films [13]. ZnSe thin

film formation can be easily controlled by various electrolyte parameter of the process [14]. On

the other hand, there are several reports available on the electrochemical deposition from

aqueous electrolyte medium [15-21], from the non aqueous solution medium has been published

[22]. Electrochemical deposition [ECD] of the element from the aqueous electrolyte solution

begins after the electrode has been brought to a potential more negative then the equilibrium

potential characteristic of the chosen ion [s,23]. In general rare-earth (RE) metals have effective

luminescent center for rare earth metals doped compound semiconductors are due to their well

and temperature-stable luminescence because of the involved incompletely field 4f shells that are

well screened and slightly affected by the crystalline field. Hence rare-earth element doped one

of the effective approaches improve the luminescence properties of semiconductor materials for

the wide range of potential application in optoelectronics like nonlinear optics, color thin film

electroluminescence screen devices and optical switches [24-29].

In the present communication we are examined the deposition of Eu3+

doped ZnSe thin

films on ITO coated conducting glass substrate by electrochemical deposition technique in an

aqueous electrolyte medium[30-36]. The influence of deposition conditions and their effect on

the structural, morphological, compositional and optical properties of as-deposited ZnSe thin

films were studied.

2. Experimental section

2.1 Materials

The chemicals used in this study were zinc sulphate (ZnSO4), selenium dioxide (SeO2)

and europium (III) acetate hydrate (C6H9EuO6. xH2O) purchased from sigma-Aldrich and used

without any purification[37-42].

2.2 Deposition of Eu doped ZnSe thin films

Eu3+

ion doped ZnSe thin films have been deposited on ITO coated conducting glass

substrate by electrochemical deposition (ECD) technique with a potentiostatic method from CH

instrument USA (model 604E). Electrochemical deposition (ECD) process was done with a five

different concentration of Eu solution was used. The concentration of Eu solution varied from 1

to 5 % of europium (III) acetate hydrate (C6H9EuO6. xH2O) and 0.3M of ZnSO4, 0.03M of SeO2

solutions were used. A conventional three electrode system was employed for the

electrochemical deposition of ZnSe thin films[43-45]. Indium tin oxide (ITO) coated conducting

glass substrate was used as working electrode, platinum wire as counter electrode and the

saturated calomel electrode (Ag /AgCl/KCl) was used as reference electrode. Approximately

1cm2 size of ITO conducting glass substrate was cleaned with soap solution, acetone and double

distilled water, followed by dried in an oven at 60 °C for 30 min. The deposition potential of -

700 mV was used with bath temperature and deposition time was maintained at 50°C and 30

min, respectively. The deposited Eu3+

ion doped ZnSe thin films were taken from bath and

International Journal of Pure and Applied Mathematics Special Issue

3800

washed with double distilled water followed by dried at room temperature and kept in

desiccators.

2.3. Characterization techniques

The structural properties of electrochemically as-deposited ZnSe thin films were studied

by using X-ray diffraction meter (XPERT-PRO) in the range 2θ = 20-80° with Cu Kα (1.5406

nm) radiation. The surface morphology of as-deposited ZnSe thin films was investigated using a

Quanta 200 FEGE model scanning electron microscopy (SEM). Elemental analysis of the as-

deposited ZnSe thin films were examined using energy diffraction X- ray analysis (EDAX) with

connected to aQuanta 200 FEGE model SEM operating at an accelerating voltage of 20 KV.

Optical absorption studies were performed from UV-visible spectroscopy using PerkinElmer

Lambda 35 UV-visible spectrometer in the wavelength range from 200-1200 nm. Room

temperature photoluminescence (PL) properties of as-deposited ZnSe thin films were carried out

with a Flurospectrometer (FP-5800) spectrograph in range from 300-1100 nm using He-Cd laser

as an excitation source.

3. Results and discussion

3.1Voltammetric study

The cyclic voltammetric experiment was obtained from a stranded three electrode system.

Where ITO glass substrate act as cathode, platinum wire act as anode and saturated calomel

(Ag+/AgCl/KCl) electrode as reference electrode, respectively. The voltammetric curve studied

in the potential of -750 mV Vs SCE. A typical voltammogram scan examined for Eu3+

ions

doped Zn/Se system on ITO glass substrate in an electrolyte solution contains 0.3M ZnSO4 and

0.003M SeO2 at 50°C. When scanning towards negative potential a reduction wave appeared,

when selenium acid is presented in the electrolyte solution.All precursors like Eu, Zn and Se

present in the bath solution the reduction wave appeared at -0.8 V. However increasing Eu

concentration in the bath solution, the reduction wave shifted towards higher potential range and

also changed the shape and height of the subsequent peaks. From this observation we used

potential range of -0.2 to -1.2 V for the deposition of Eu3+

ions doped ZnSe thin films.

Fig 2. Shows linear sweeping voltammetry at various concentrations of Eu3+

ions doped

ZnSe thin films. It clearly showed the doping concentration affected the shape and height of

peaks. The peak current density depends on the square root of scan rate. These features are

studied for an irreversible system and this process is controlled from diffusion [16].

3.2 Structural studies

The crystalline size and crystalline structure characterization of electrochemically

deposited ZnSe:Eu thin films were studied by using X-ray diffraction technique (XRD). From

literature survey ZnSe is known to exist has two structural phase like cubic zinc bland structure


3801

or hexagonal quartzite structure type or some time a mixture of both phase are absorbed [2,5].

The x-ray diffraction pattern of as-deposited ZnSe:Eu thin films on ITO coated glass substrate

with five different concentration of Eu3+

ions is shown in figure1 a-e, respectively. There are

three intense diffraction peaks are observed such as (101), (103), (202) and less intense ITO

substrate peaks also appeared. The (101) observed plane is due to the hexagonal wurtzite

structure is shown in fig 3 (a), 3(c), no other diffraction peaks of ZnO, Zn(OH) observed. Fig

3(b), (d) and (e) shows XRD pattern of as-deposited ZnSe thin films obtained from 2, 4 and 5%

of Eu3+

ions doped. These diffraction samples have some cubic and hexagonal orientation of

intense peaks, the obtained d phasing values were compare with stander d values cod no: ()

which confirm that some hexagonal and cubic phase is also appeared in ZnSe thin films. In order

to examine the crystalline structure of as-deposited thin films with various doping concentration.

The lattice constant ‘a’ is obtained from the high intense diffraction peak using, the following

relation for cubic structure.

2

1222 klhda (1)

and hexagonal structure

2

2

2

22

2 3

41

c

l

a

lhkh

dhkl

(2)

where dhklis different between the crystallographic planes and hkl are miller indices. The

calculated d values are use to examine the lattice constant of thin films and these results are

shown in table 2.The full width at half maximum (FWHM) values is to be smaller with

increasing doping concentration. The average crystalline size of as-deposited ZnSe thin films

was estimated using the scherrer equation.

cos

KD (3)

where D is the crystalline size, k is the constant is taken 0.9, λ is the X-ray wavelength, β is full

width at half maximum value of high intense plane in radian and θ is the bragg angle. Some

additional information of the dislocation density, number of crystalline and micro strain these

values are obtained from high intense diffraction peak (101) FWHM of thin film from XRD,

these values are presented in table 2.

Micro strain (ɛ) 4/cos (4)

Number of crystallites (N) aD/15 (5)

Dislocation density (δ) 3/ Dd (6)


3802

where θ is Bragg’s angle and d is thickness of thin film. From literature, micro strain is indirectly

proportional to particle size.

3.31 Morphological and elemental study

Scanning electron microscopy (SEM) is an exceptional technique to examine

microstructure of the thin films. The SEM micrograph and corresponding EDAX spectra of the

ZnSe thin films were deposited with five different Eu concentrations are shown in figure 1a-e,

respectively. The concentrations of Eu solution play on important role on the surface

morphology of as-deposited ZnSe thin film. Fig 4(a) show SEM image of 1% Eu doped ZnSe

thin film, a uniform and well cover to the substrate surface nicely. From the SEM image it is

clearly indicated seen that the film composed of densely packed minute grains. The presented

uniformly with a smooth homogenous background this may be attributed to the amorphous phase

of ZnSe film. The doping concentrations also affect the surface morphology of electrochemically

deposited ZnSe thin film shown in figure 2 (b). The SEM images shows increasing concentration

of Eu solution about 2% in the reaction, the ZnSe film has a smooth surface with increase the

diameter of spherical grains. It is clearly indicated to the nucleation and growth process. When

the Eu solution concentration is 3% the ZnSe thin films exhibit uniform and good coverage of

the spherical grain on the substrate surface shown in figure 2(c). Hence it is clearly indicate that

the good conductivity of the electrolyte when doping concentration increased about 3% in

reaction. Figure 2(d-e) shows the SEM images of the ZnSe thin films were deposited with 4 and

5% of Eu solution. The surface morphology of the ZnSe films visibly changed with the

concentration of Eu. At both concentrations, the film compactness was good, the film surface

was uniformly covered, and the grain size of films was quite well. From the characteristic

spherical shape of grains are disappeared due do the higher concentration of Eu solution. From

this result, clearly indicate that the present of high selenium stoichiometric in the reaction.

The quantitative analysis of electrochemically as-deposited ZnSe:Eu thin films were

studied by using energy dispersive X-ray analysis (EDAX) technique at different concentration

of Eu3+

ion. The elemental analysis was carried out only for the Zn, Se and Eu elements, the

composition of Eu doped ZnSe thin films were shown in table 1. The as-deposited thin films

shows large amount of elemental selenium can be observed in this studied. From the literature

survey ZnSe thin film deposited by electrodeposition method always Se rich composition [22].

3.4 Optical study

Optical absorption spectra was studied in room temperature at the photons of different

wavelength in the range from 300-1100nm. Fig 5 shows the results of the absorption coefficient

(αhν)2 vs photon energy (hν) curves, for ZnSe thin film deposited on ITO glass substrate with

various doing concentration was used. For the as-deposited ZnSe thin films were carried out

from the doping concentration in between 1 and 3%, a sharp absorption coefficient edge was

observed. It is clearly indicated to the hexagonal phase of films. When doping concentration was


3803

used 2, 4 and 5% the absorption coefficient edge was not sharp at 3.21, 2.98 and 3.56eV and the

band gap values are increased compeer to the bulk band gap of ZnSe (2.7eV). It is clearly

indicated to the mixture phase of cubic and hexagonal phase was presented.

3.5 Photoluminescence study

Typical room temperature photoluminescence spectrums of as-deposited ZnSe thin films

were shown in fig 6. PL spectra of the films were obtained from the excitation wavelength (λe) of

371nm. PL spectra of ZnSe thin films consists of at least three emission peaks such as 410 nm,

435nm and one weak emission peak centre at 461nm.The high intense emission peak present at

435nm. It was noted that when the small amount of Eu (4%) is used in ZnSe thin film deposition,

the emission show very high intensity is compeer to the other emission peaks. The strong

emission peak 435nm is due to the near band edge emission peak of ZnSe. There is a decrease in

the intensity of emission peaks obtain from the Eu concentration of 1, 2, 3 and 5% use thin film

deposition.

3.6 Raman study

Fig 7. Shows the typical room temperature Raman spectra of as-deposited ZnSe thin

films with Eu3+

ions doped. The broad peak centre at 246 cm-1

due do the longitudinal optical

(LO) phonon in ZnSe. Howere in the value of doping concentration increased from 1-5%. Eu3+

ions LO peak shows small shifting towards higher wavelength side 3cm-1

, which may be due to

the higher electronegative nature of Eu3+

ions compeer to ZnSe [23]. The present measurement

condition laser beam used for the excitation of Raman analysis, the amorphous and crystalline

nature of Se shows the optical phonon peak at 240 cm-1

[24]. The beak broad and sharper with

reduction of FWHM value of ZnSe thin films. It clear to the effect of average strain value

decreased in the thin films show in table 2.

4. Conclusions

ZnSe thin films have been successfully deposited on ITO glass substrate by using

electrochemical deposition technique at aqueous electrolyte solution with different Eu3+

ions. The

effects of doping concentration on structural, morphological and optical properties of as-

deposited ZnSe thin films have been investigated. From the different doping conctration, the

optimal condition for the deposition of high quality ZnSe thin film was obtained from 3% doped

film. The grain size of the thin films have been found to the 31.35 -73.34 nm in size and

spherical shapes of the grain are observed. The XRD analysis conformed that the as-deposited

film exhibited hexagonal (wurtzite) structure and cubic zinc bland structure. Optical band gap

energy (Eg) of ZnSe thin film has blue shifted compared to the bulk band gap of ZnSe. The room

temperature photoluminescence measurement show a strong near band edge emission (NBE) and

also broad weak emission conformed that the spherical shape of ZnSe thin film and presence of

few defect.


3804

Acknowledgments

The authors would like to acknowledge the financial support of Science & Engineering

Research Board (SERB), Department of Science and Technology (DST), Fast Track Research

Scheme, India.

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optoelectronic devices, Journal of material science: materials in electronics 1998; 9: 231-

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12. Remigiusz Kowalik, Krzysztof Fitzner, Analysis of the mechanism for electrodeposition

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84.

13. E.B. Chubenko, A.A. Klyshko, V.A. Petrovich, V.P. Bondarenko, Electrochemical

deposition of zinc selenide and cadmium selenide onto poroussilicon from aqueous acidic

solutions, Thin solid films 2009; 517: 5981-5987.

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and its photoelectrical propertiesElectrochemical Acta 2013; 107: 71.

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Electrodeposition and characterization of ZnSe semiconductor thin films Solar energy

mater solar cells 2011; 70: 255-268.


3805

16. Mirtat Bouroushian, Tatjana Kosanovic, Zafiris Loizos Nicholas Spyrellis,

Electrochemical formation of zinc selenide from aqueous solution J. Solid state

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Figure captions

Figure 1 Cyclic voltammogram of as-deposited ZnSe thin film obtained from an

aqueous electrolytic bath consists of five different concentration of Eu

solution.

Figure 2 Linear voltammograms for as-deposited ZnSe thin films at different

concentration of Eu solution.

Figure 3(a-e) XRD patterns of as-deposited ZnSe thin films prepared using different

concentration of Eu solution at (a) 1% , (b) 2%, (c) 3%, (d) 4% and (e) 5%.

Figure 4(a-e) SEM with EDAX spectra of as-deposited ZnSe thin films prepared using

different concentration of Eu solution at (a) 1% , (b) 2%, (c) 3%, (d) 4%

and (e) 5%.


3806

Figure 5 Absorption coefficient vs photon energy spectra of as-deposited ZnSe thin

film with five different of Eu solution.

Figure 6 Photoluminescence spectra of as- deposited ZnSe thin films recorded at room

temperature.

Figure 7 Raman spectra of as-deposited ZnSe thin films prepared with five different

Concentration of Eu solution.

Figure 8 Schottky diode characteristic ofthe semiconducting as-deposited ZnSe thin

films prepared using five different Eu concentration.

Table caption

Table 1 Represent particle size, micro strain and band gap of as-deposited ZnSe thin

films under different preparation conditions.

Table 1 Represent FWHM, d(exp)Å, dislocation density and number of crystallites

per unit area of as-deposited ZnSe thin films from XRD.


3807

Figure 1

-1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0.0

-0.0002

-0.0001

0.0000

0.0001

0.0002

0.0003

0.0004

i[A

/cm

2]

E[V] vs.SCE

1%

2%

3%

4%

5%


3808

Figure 2

-1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0.0

-0.00025

-0.00020

-0.00015

-0.00010

-0.00005

0.00000

0.00005

0.00010

0.00015

0.00020

0.00025

0.00030

0.00035

i[A

/cm

2]

V[E] vs.NEK

%1

%2

%3

%4

%5


3809

Figure 3(a-e)

20 30 40 50 60 70

H

2

(a)

(10

1)

(10

3)

(20

2)

HH

(b)

(10

0) (00

2)

(11

1) (1

01

)(2

00

)

(110)

(10

3)

(20

2)

H C H

C

H H H

Inte

ns

ity

(a.u

)

(c)H

(11

0)

(10

3)

(20

2)

H

H

H

(d)

(10

0)

(00

2)

(11

1)

(10

1)

(20

0)

(11

0)

(10

3)

H

HC

H H

(e)(1

00

)(0

02

)

(11

1)

(10

1)

(20

0)

(11

0)

(10

3)

(20

2)

H

C

HH

HC

HC

HHITO


3810

Figure 4(a-e)

(a)

(b)

(c)

(d)

(e)


3811

Figure 5

2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0 4.2

10

20

30

40

50

60

70

80

90

100

h

eV

cm

-1)2

heV

5 %

4 %

3 %

2 %

1 %


3812

Figure 6

400 425 450 475

PL

In

ten

sit

y (

a.u

.)

Wavelength (nm)

1%

2%

3%

4%

5%


3813

Figure 7

200 300 400 500 600 700

Ra

ma

n I

nte

ns

ity

(a

.u.)

Wavenumber (cm-1)

1%

2%

3%

4%

5%


3814

Figure 8

-0.6 -0.4 -0.2 0.0 0.2 0.4 0.6

-9

-6

-3

0

3

6

9

5 % Eu doped ZnSe

M x

10

-4(e

mu

)

H (T)

-0.6 -0.4 -0.2 0.0 0.2 0.4 0.6

-6

-4

-2

0

2

4

6

H (T)

M x

10

-4 (

em

u)

2 % Eu doped ZnSe

-0.6 -0.4 -0.2 0.0 0.2 0.4 0.6

-6

-4

-2

0

2

4

6

3 % Eu doped ZnSe

H (T)

M x

10

-4(e

mu

)

-0.6 -0.4 -0.2 0.0 0.2 0.4 0.6

-6

-4

-2

0

2

4

6

4 % Eu doped ZnSe

H (T)

M x

10

-4(e

mu

)


3815

Table 1

S.No

Bath temperature (°C)

Particle Size (nm)

Strain (10−3

)

Band Gap (eV)

1 50 36.27 2.17 3.31

2 50 42.71 0.78 3.21

3 50 31.35 0.98 3.26

4 50 70.45 0.64 2.98

5 50 73.34 1.04 3.56

Table: 2

Doping

concentration (%)

Bath

temperature

(°C)

FWHM β

(red)

d(exp)

(Å)

Dislocation density

(1014

lines/m2)

Number of

crystallites/unit

area (1022

m−2

)

1 50 0.003960 2.9468 7.60 9.01

2 50 0.003363 2.9468 5.48 3.39

3 50 0.004589 2.9434 0.001 6.64

4 50 0.002028 2.1936 2.02 1.87

5 50 0.001947 2.1949 1.85 7.81

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13. Manikandan, J., Hussain, J.H., Design on blind shoe using ATMEGA328 micro

controller, International Journal of Mechanical Engineering and Technology, V-8, I-8,

PP-1575-1579, 2017

14. Manikandan, J., Hussain, J.H., Design and fabrication of blind shoe using ATMEGA328

micro controller and vibration motor, International Journal of Pure and Applied


15. Manikandan, J., Hussain, J.H., Design and fabrication of blind shoe using ATMEGA328

micro controller and vibration motor, International Journal of Mechanical Engineering

and Technology, V-8, I-8, PP-1588-1593, 2017


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16. Manikandan, J., Sabarish, R., Waste heat recovery power generation system using

thermoelectric generators, International Journal of Pure and Applied Mathematics, V-

116, I-17 Special Issue, PP-85-88, 2017

17. Meenakshi, D., Udayakumar, R., Protocol with hybridized bluetooth scatternet formation

for wireless network, International Journal of Applied Engineering Research, V-9, I-22,

PP-7299-7307, 2014

18. Meikandaan, T.P., Hemapriya, M., Use of glass FRP sheets as external flexural

reinforcement in RCC Beam, International Journal of Civil Engineering and Technology,

V-8, I-8, PP-1485-1501, 2017

19. Meikandaan, T.P., Hemapriya, M., Use of glass FRP sheets as external flexural

reinforcement in RCC beam, International Journal of Pure and Applied Mathematics, V-


20. Meikandaan, T.P., Hemapriya, M., Study on properties of concrete with partial

replacement of cement by rice husk ash, International Journal of Pure and Applied


21. Meikandaan, T.P., Hemapriya, M., Experimental behaviour of retrofitting of prestressed

concrete beam with FRP laminates, International Journal of Pure and Applied


22. Meikandaan, T.P., Hemapriya, M., Study of damaged RC beams repaired by bonding of

CFRP laminates, International Journal of Pure and Applied Mathematics, V-116, I-13

Special Issue, PP-495-501, 2017

23. Meikandaan, T.P., Hemapriya, M., Experimental study on strengthening of shear

deficient RC beam with externally bonded GFRP sheets, International Journal of Pure

and Applied Mathematics, V-116, I-13 Special Issue, PP-487-493, 2017

24. Michael, G., Arunachalam, A.R., Srigowthem, S., Ecommerce transaction security

challenges and prevention methods-new approach, International Journal of Pure and

Applied Mathematics, V-116, I-13 Special Issue, PP-285-289, 2017

25. Michael, G., Karthikeyan, R., Studies on malicious software, International Journal of

Pure and Applied Mathematics, V-116, I-8 Special Issue, PP-315-319, 2017

26. Michael, G., Srigowthem, S., Vehicular cloud computing security issues and solutions,

International Journal of Pure and Applied Mathematics, V-116, I-8 Special Issue, PP-17-

21, 2017

27. Micheal, G., Arunachalam, A.R., EAACK: Enhanced adaptive acknowledgment for

MANET, Middle - East Journal of Scientific Research, V-19, I-9, PP-1205-1208, 2014

28. Murugesh, Kaliyamurthie, Thooyamani, K.P., ICI self-cancellation schee for OFDM

systems, Middle - East Journal of Scientific Research, V-18, I-12, PP-1775-1779, 2013

29. Murugesh, Kaliyamurthie, Thooyamani, K.P., Preprocessing and postprocessing decision

tree, Middle - East Journal of Scientific Research, V-13, I-12, PP-1599-1603, 2013

30. Nakkeeran, S., Hussain, J.H., Innovative technique for running a petrol engine with diesel

as a fuel, International Journal of Pure and Applied Mathematics, V-116, I-18 Special

Issue, PP-41-44, 2017


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31. Nakkeeran, S., Nimal, R.J.G.R., Anticipation possessions for seismic use carbon black on

rubbers, International Journal of Pure and Applied Mathematics, V-116, I-17 Special

Issue, PP-63-67, 2017

32. Nakkeeran, S., Sabarish, R., New method of running a petrol engine with diesel diesel as

fuel, International Journal of Pure and Applied Mathematics, V-116, I-18 Special Issue,

PP-35-38, 2017

33. Nakkeeran, S., Vino, J.A.V., Prevention effects for earthquakes using carbon black on

rubbers, International Journal of Pure and Applied Mathematics, V-116, I-17 Special

Issue, PP-301-305, 2017

34. Nakkeeran, S., Vino, J.A.V., Performance development by using mesh plates in parallel

and counter flows of heat exchangers, International Journal of Pure and Applied


35. Nalini, C., Arunachalam, A.R., A study on privacy preserving techniques in big data

analytics, International Journal of Pure and Applied Mathematics, V-116, I-10 Special

Issue, PP-281-285, 2017

36. Nalini, C., Ayyappan, G., Academic social network dataset applying various metrics for

measuring author's contribution, International Journal of Pure and Applied Mathematics,

V-116, I-8 Special Issue, PP-341-345, 2017

37. Nalini, C., Brintha Rajakumari, S., Iron toxicity of polluted river water based on data

mining prediction analysis, International Journal of Pure and Applied Mathematics, V-


38. Nandhini, P., Arunachalam, A.R., Fault-tolerant quality using distributed cluster based in

mobile ADHOC networks, International Journal of Pure and Applied Mathematics, V-


39. Nandhini, P., Arunachalam, A.R., Security for computer organize database assaults from

threats and hackers, International Journal of Pure and Applied Mathematics, V-116, I-8


40. Nandhini, P., Arunachalam, A.R., Mobile ADHOC networks: Security and quality of

services, International Journal of Pure and Applied Mathematics, V-116, I-8 Special

Issue, PP-371-374, 2017

41. Naveenchandran, P., Vijayaragavan, S.P., A high performance inverter fed energy

efficient cum compact microcontroller based power conditioned distributed photo voltaic

system, International Journal of Pure and Applied Mathematics, V-116, I-13 Special

Issue, PP-165-169, 2017

42. Naveenchandran, P., Vijayaragavan, S.P., Combination of wind energy-solar energy

power generation, International Journal of Pure and Applied Mathematics, V-116, I-13


43. Naveenchandran, P., Vijayaragavan, S.P., A sensor less control of SPM using fuzzy and

ANFIS technique, International Journal of Pure and Applied Mathematics, V-116, I-13


44. Nima, R.J.G.R., Hussain, J.H., Design and fabrication of an indexing fixture in a shaper

machine, International Journal of Pure and Applied Mathematics, V-116, I-18 Special

Issue, PP-441-445, 2017


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45. Nimal, R.J.G.R., Hussain, J.H., Deflection and stress analysis of spur gear tooth using

steel, International Journal of Pure and Applied Mathematics, V-116, I-17 Special Issue,

PP-119-124, 2017


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BIST, BIHER, Bharath University,Chennai -73Effect of Eu 3+ ions on structural, optical and...

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