BIODATA of Prof.Dr.Krishnan BASKARctdt.annauniv.edu/cv/Baskar _ CV_website.pdf · 1 BIODATA of...

1

BIODATA of

Prof.Dr.Krishnan BASKAR

1. General Information

Name

Prof. Dr. Krishnan BASKAR

Place and Date of

Birth (Day/Month/Year)

Kottaikuppam, India

10 December 1961

Nationality

Indian

Community

OC

Mother Tongue

Tamil

Correspondence

Address

Vice-Chancellor

ManonmaniamSundaranar University,

Abishekapatti, Tirunelveli – 627 012,

Tamil Nadu, INDIA

Permanent Address

No. 5020, 4th Street, Ram Nagar North,

Madipakkam, Chennai 600091, INDIA

Phone No.

Mobile No.:

Landline No.:

+91-9444125126

+91-462-2322973

Email

[email protected]

2

2. Present Position

a. Designation Vice-Chancellor

b. Organization

Manonmaniam Sundaranar University Abishekapatti, Tirunelveli – 627 012, Tamil Nadu, INDIA

c. Pay Scale

Basic Pay Rs. 2,10,000

d. Date of Appointment to the present post

16 February 2016

3. Details of Experience and Qualifications:

S.No Post held Pay Scale Organization

Nature of duties

Experience (In Years and

Months)

1. Vice-Chancellor

UGC Pay Scale

Manonmaniam Sundaranar University, Tirunelveli, Tamil Nadu, INDIA

Administration of the University and its 89 affiliated colleges in the three districts of Tirunelveli, Tuticorin & Kanyakumari in Tamil Nadu

Since 2016 -Till date

2. Director, Crystal Growth Centre

UGC

Pay

Scale

Anna University, Chennai Tamil Nadu, INDIA

To make top class research Centre in the international scenario through training, research and development.

4 Years and 7 Months

3. Director, Centre for International Affairs

UGC

Pay

Scale


Promoted Academic & research exchange programs


4. Professor

UGC

Pay

Scale


Teaching and Research

Since 2008 -Till date (Over 10 Years)

5. Assistant Professor

UGC

Pay

Scale


Growth and characterization of III-V materials and devices

8 Years

6. Senior Lecturer

UGC

Pay

Scale


Growth and characterization of III-V materials and devices


7. Lecturer UGC

Pay

Scale


Crystal Growth and characterization of III-V materials


3

4. Educational Qualifications (In chronological order from latest to Graduation level)

S.No. Qualification University Year Subject(s)

/Topics(s)

%

Achieved

Distinctions

Etc.

1 DOCENT

Royal Institute of

Technology (KTH),

Sweden

2003

Semiconductors-

Engineering

Sciences

Highly

Commended

Highly

Commended

2 Ph.D., Anna University,

Chennai 1991

Faculty of

Science

Highly

Commended

Highly

Commended

3 M.Sc., University of Madras,

Chennai 1985

Physics

(Specialization in

Electronics)

First Class Distinction

5. Administrative Experience / Post(s) & Responsibilities held

S.No. Post Organization/

University

Duration Experience

(In Years and

Months) From

(Date)

To (Date)

1. Vice-

Chancellor

Manonmaniam

Sundaranar University,

Tirunelveli,

Tamil Nadu, INDIA

February

2016 Present Till Date

2.

Director,

Centre for

International

Affairs

Anna University, Chennai

Tamil Nadu, INDIA

August

2008

February

2013

04 Years

&

06 Months

3.

Director,

Crystal

Growth

Centre


Tamil Nadu, INDIA

May

2012

February

2016

03Years

&

08 Months

4

6. (a) Academic/Teaching Experience & Responsibilities (In chronological order from latest to oldest)

S.No. Post Organization/ University

Duration Experience (In Years and

Months) From (Date)

To (Date)

1 Vice-Chancellor Manonmaniam Sundaranar

University, Tirunelveli, Tamil Nadu, India

February 2016

Present Till Date

2 Director

Crystal Growth Centre

Anna University, Chennai May 2012

February 2016


3 Professor Anna University, Chennai Sept.2008 Present Till Date

4 Director

Centre for International Affairs , Anna University,

Chennai

August 2008

Feb. 2013 04Years and

07 Months

5 Assistant Professor

Anna University, Chennai Sept.2000 Sept. 2008

8 Years

6 Senior Lecturer Anna University, Chennai March 1995

Sept. 2000


7 Lecturer Anna University, Chennai Sept.1991 March 1995


8 Researcher SIMAP, Grenoble INP,

France June 2014 June 2014 25 days

9 Researcher Ecole Central Nantes,

France April 2014 May 2014 25 days

10 Researcher SIMAP, Grenoble Nantes,

France May 2010

June 2010

One Month

11 Researcher IMRE-Tohoku University,

Sendai, Japan Oct. 2007 Nov. 2007 Two months

12. Visiting Scientist Royal Institute of

Technology(KTH), Stockholm, Sweden

January 2001

January 2004

3 Years

13 Guest researcher Electrotechnical Laboratory,

Tsukuba, Japan June 2000 June 2000 30 days

14 Guest researcher Electrotechnical Laboratory,

Tsukuba, Japan Sept.1999 Sept.1999 20 days

15 Postdoctoral

Fellow STA Fellow

Electrotechnical Laboratory, Tsukuba, Japan

July 1997 July 1999 Two Years

16

Postdoctoral Fellow

Monbusho Fellow

Nagoya Institute of Technology, Japan

April 1995 March 1997

Two Years

17 Senior Research

Fellow Anna University, Chennai June 1990

September 1991

One Year 4 Months

18 Junior Research

Fellow Anna University, Chennai May 1986 June 1990

4 Year 2 Months

5

(b) Participation and Contribution in relevant areas in higher education

Organization Area of specialization

Visiting Professor

Royal Institute of Technology, Sweden

Semiconductor materials, optoelectronics devices

Resource Person

Ecole Central Nantes, France And several other national and international organizations

Internationalization, Physics of materials and Devices. Solar Cells, laser diodes, field effect transistors, light emitting diodes, sensors

( c ) Involvement with formulation of academic programmes:

S.No. Nomenclature of Innovative Academic Programmes formulated

Date of approval by Academic Council

Year of Introduction

1

Double masters in Engineering Programme with Five Ecole Centrals in France and Anna University

Through MoU signed on 16 August 2011

2011

2

Semester abroad programe in UG, PG and Programs of University Departments of Anna University

Through MoUs and Erasmusmundus

Programmes of European commission

2008

3

Five Year Integrated program in University Department of Manonmaniam Sundaranar University 1. M.Sc. Physics, 2. M.Sc. Chemistry 3. M.Sc. Mathematics 4. M.Sc. Environmental Science

44th Standing Committee on Academic Affairs (SCAA)

held on 30th May 2016

2016

4

Yoga ad-on course at UG level – Manonmaniam Sundaranar University

44th Standing Committee on Academic Affairs (SCAA) held on 30th May 2016

2016

5 New regulations for UG, PG, M.Phil and Ph.D. – Manonmaniam Sundaranar University


2016

6

Social harmony and youth leadership as electives in 2nd and 5th semesters of UG programme - Manonmaniam Sundaranar University


2016

7 Computers for modern era (Compulsory subject in all UG Programs)

46th Standing Committee on Academic Affairs (SCAA)

2017

6

Yoga for holistic health (Compulsory subject in all UG Programs) M.Sc Cyber Security (2 years) M.Sc Business Analytics (2 years) M.Sc Media Science (5 years) M.Sc Biotechnology (5 years) M.Sc Marine Science (5 years) M.Com Commerce (5 years)

(d) Important MoUs formulated for academic collaborations:

S.No. MoUs formulated Name of Agencies/Departments involved (S.No.01-59 with Anna University and 60-62 with Manonmaniam Sundaranar University)

Year and Date of MoU

1. PASCO Corporation, Japan 20.09.2008

2. Osaka City University, Japan 22.09.2008

3. Cypress Semiconductor Corporation, USA 06.11.2008

4. Maastricht University, Netherlands 14.11.2008

5. University of Joseph Fourier (Grenoble 1), France 10.12.2008

6. University of Nebraska-Lincoln, USA 05.02.2009

7. Aston University, UK 17.02.2009

8. Bern University of Applied Sciences, Switzerland 05.03.2009

9. The Universite Francois Rabelais, Tours, France 10.03.2009

10. Hiroshima University, Japan 17.03.2009

11. Dongguk University, Korea 13.04.2009

12. Yonsei University, Korea 21.04.2009

13. The Athabasca University Governing Council, Canada 01.08.2009

14. MIMOS BERHAD, Malaysia 11.08.2009

15. Fundacion fondo de cultura de Seville focus-Abengoa

Seville (BEFESA), Spain

18.08.2009

16. The University of Western Australia, Australia 07.09.2009

17. The Rovira I Virgili University, Spain 09.09.2009

18. Uppsala University, Sweden 23.09.2009

19. University of Southampton, UK 25.09.2009

20. Brunel University, West London 28.09.2009

21. National Tsing Hua University, Taiwan 09.10.2009

22. National Chiao Tung University, Taiwan 13.11.2009

7

23. FOOD Denmark Research School, Denmark 04.12.2009

24. LOICZ Central IPO., Germany 07.12.2009

25. Ecole Centrale De Nantes, France 14.12.2009

26. Hunter College of the City University of New York, USA 22.12.2009

27. ESIGELEC-School of Engineering Rouen, France 19.01.2010

28. The University of Nottingham, UK 03.03.2010

29. University of Malaya, Malaysia 11.03.2010

30. Ecole Centrale De Nantes (Double Degree Agreement of

Academic cooperation), France

08.12.2010

31. Nagoya Institute of Technology, Japan 20.09.2011

32. The University of ANGERS, France 18.02.2011

33. Polytech Nantes, University of Nantes, France 02.03.2011

34. Royal Institute of Technology, Sweden 23.03.2011

35. Birmingham City University, UK 11.05.2011

36. University of Wuppertal, Germany 09.06.2011

37. North Dakota State University, USA 20.06.2011

38. Ryerson University, Canada 05.07.2011

39. The University of Sydney, Australia 04.08.2011

40. University of New South Wales, Australia 04.08.2011

41. Ecole Centrale De Lille, France 16.08.2011

42. Ecole Centrale De Lyon, France 16.08.2011

43. Ecole Centrale De Marseille, France 16.08.2011

44. Ecole Centrale De Nantes (Double Degree Agreement of

Academic Coopration), France

16.08.2011

45. Ecole Cenrale Paris, France 16.08.2011

46. Ansbach University of Applied Sciences, Germany 05.09.2011

47. The University of Findlay, USA 05.09.2011

48. Peoples’ Friendship University of Russia (PFUR), Russia 05.09.2011

49. University of Technology Berlin, Germany 19.09.2011

50. Technical University of Liberec, Czech republic 27.09.2011

51. Gerindtec, Germany 08.11.2011

52. Panasonic Coperation (“ATR1”), Japan 01.12.2011

53. The National Institute for Materials Science (Post

Graduate Students and Researchers), Japan

01.03.2012

54. Curtin University of Technology, Australia 20.02.2012

55. Queen Mary, University of London, UK 24.04.2012

8

56. Plymouth University, UK 28.05.2012

57. University of Central Florida, USA 28.05.2012

58. Nippon Chemical Industrial Co.ltd, Japan 28.05.2012

59. Freie Universitat Berlin, Germany 06.06.2012

60 Software Technology Park of India, New Delhi, India 20 .06 2016

61 Indian Institute of Geomagnetism (IIG), INDIA 13 .072016

62 Centre of Central Marine Fisheries Research Institute,

INDIA

18.08 2016

7. International academic Exposure : More than Seven Years

S.No. Post/ Assignment

Organization

University

Area of

Assignment

Duration

From To In Years

&

Months

1. Researcher SIMAP, Grenoble

INP, France

Erasmus Mundus-Staff Mobility, European

Commission (Raman studies on Nitrides)

June 2014

June

2014 25 days

2. Researcher Ecole Central

Nantes, France


Commission (TEPL studies on Nitrides)

April

2014

May

2014 25 days

3. Researcher SIMAP, Grenoble Nantes, France


Commission (CVD Growth of AIN)

Aug.

2010

June

2010

One Month

4. Researcher IMRE-Tohoku

University, Sendai, Japan

Experimental aspects of MOCVD

Oct.

2007

Nov.

2007

Two months

5. Visiting

Scientist

Royal Institute of Technology(KTH),

Stockholm, Sweden

Fabrication of BAL& RWG lasers, MOVPE growth and

characterizations of GaInNAs and GaInAs.

GaN and related materials growth, characterization

and processing with emphasis on LEDs and

modulators

January 2001

January 2004

03 Years

6. Guest

researcher

Electrotechnical Laboratory,

Tsukuba, Japan

MBE growth of III-V/Si semiconductors and

characterization

June 2000

June 2000

30 days

7. Guest

researcher


Tsukuba, Japan


characterization

Sept.

1999

Sept.

1999 20 days

9

8. Scholarly achievements:

Prof. K. Baskar, Vice-Chancellor, has made tremendous advancements in

academics, finance and administration in Mamonmaniam Sundaranar University,

Tirunelveli, Tamil Nadu. University was subjected to NAAC accreditation process in

August 2018 and upgraded from B-grade to A-grade with a score of 3.13. The

University was enrolled in NIRF ranking and obtained the national rank in the band

of 151-200 in the year 2018. This could be possible due to reforms in curriculum,

examination automation, affiliation, research and infrastructure. The finance of the

University has been improved by Rs.40 crores within two years and the University

is now on self-reliance in finance. The decentralized administrative ambience

resulted in speedy disposal of administrative work efficiently and transparently with

near zero grievances.

The following accomplishments were made during the tenure in Anna University (1991-2016)

Solar cells with light conversion efficiency of 21.4% were successfully fabricated

and published

UV (260-360nm) L E D s , visible light emitting diodes and Laser diodes (1.33 and

1.55 micron) were successfully fabricated at wafer level and published in journals.

Signed 59 MoUs with foreign Institutions and developed bilateral academic and

research cooperations.

Introduced the Japanese Language in the Curriculum of Anna University.

Several Japanese language books have been brought to Anna University under

Japanese Library donation programme.

8.

Postdoctoral Fellow

STA Fellow


Tsukuba, Japan


characterization

July

1997

July

1999 2 Years

9.

Postdoctoral Fellow

Monbusho Fellow

Nagoya Institute of Technology,

Japan

MOCVD growth of III-V semiconductors on Si,

characterization and solar cell fabrication

April 1995

March 1997

2 Years

10

Established a First international MoU between Nagoya Institute of Technology and

Anna University in 1997.

One of the Coordinators for Erasmus Mundus bilateral projects of European

Commission with Italy, Sweden, France, Belgium for the total grant of about 12

million Euros.

Member of many committees in DRDO, UGC, DST, IITs and Universities

Member of several scientific societies

Has proficiency in Tamil, English, Japanese and Telugu languages.

Established class 10000 clean room with MOCVD facility for the preparation of

GaN and related alloys for LEDs and electron devices with a funding of Rs. 6.126

Crores.

Established a Liquid Phase Epitaxy Laboratory for the cost more than Rs.40 lakhs

with a funding from Government of India and Japan Collaboration.

Visitors programme and modernization of office equipment under Crystal Growth

Center-UGC: Anna University Facility

Organizing committee member of several seminars/Workshops/Schools organized

at Crystal Growth Centre.

Undertaken funded research projects over Rs.10.00 Crores, Supervised the Ph.D

and Master’s thesis in addition to regular teaching.

Introduced double master degree programmes in Anna University with top five

Ecole Centrals in France.

An Exclusive International hostel for NRI and Foreign National students both for

boys and girls (Tulip & Lavender) has been created at cost of Rs.15.00 crores.

All the rooms are equipped with air conditioner, geyser, a mini-fridge and a

microwave oven. In addition, the hostel premises are fitted with surveillance

cameras, fire alarm, access controller devices and washing machines.

International hostel has high quality state of art kitchen facilities (Gourmet Basket)

to cater the needs of international students.

11

Enhanced the admission of foreign and NRI students through single window

admission and increased the revenue of Centre for International affairs, Anna

University, from less than one crores to rupees 36 crores by increasing students

admission strength to over nine hundred with in four years (2008-2012)

Established sophisticated Equipment facilities like HRXRD, PL, XRD, SEM, FTIR,

UV-Visible, Hall system and I-V measurement system costing Rs.4.20 crores at

Crystal Growth Centre.

Established building costing Rs.1.10crores at the second floor of Crystal Growth

Centre under UGC-National Facility.

Visited 27 foreign countries including Japan, Sweden, Germany, Finland,

Norway, France, Switzerland, Italy, Belgium, UK, USA, Canada, Australia, etc.,

A. Contribution to Journals and Books:

Details

Books authored ( Chapters) Two

Peer reviewer

Several Journals

Member of the International Advisory Board Advisory committee ICCG-18,

Nagoya, Japan

12

B. Publications: in recognized professional and/or academic Journals

Total Publications: One hundred and fifty six (156)

S. No. Date Title Name of Journal

Refereed Journals

Number of citations

1. 1988

Growth and micro hardness studies of mercuric iodide

single crystals

J. Materials Science Letters

Refereed Journals

4 (Springer)

2. 1989 Ice nucleation of AgI solid

solutions Springier

Verlag series Refereed Journals

5(Google Scholar)

3. 1989

X-ray analysis and ice nucleation behavior of AgI-CuI-

KI system

J. materials Science

Refereed Journals

5 (Google Scholar

2 (Web of science)

4. 1989 Molecular dynamics of

dihalosilanes

Acta Ciencia Indica

Refereed Journals

3 (PMC)

5. 1990 Hardness anisotropy of

mercuric iodide single crystals


Refereed Journals

2(Google Scholar)

6. 1990

Growth and characterization of mercurous chloride single

crystals

Crystal Research and Technology

Refereed Journals

2 (Research

gate)

7. 1990

Growth and micro hardness studies of melt grown lead (II)

chloride single crystals

Crystal Research and Technology

Refereed Journals

6 (Wiley Online Library)

8. 1991

A study on the mechanical and optical properties of mercurous

chloride single crystals

Materials Chemistry

and Physics

Refereed Journals

2(Research gate)

9. 1992 Ice nucleation studies of AgI-

NaCl system

Proc. of 13th International

conf. on nucleation

and atmospheric

aerosols

Refreed proceedings

10. 1996

Studies on ice nucleating behaviour of AgI-AgBr-CuBr

system

Mat. Res. Refereed Journals

13

11. 1993 LPE growth of GaAlAs/GaAs,

Proc. of Fifth National

Seminar on Crystal

Growth, Anna University, Madras,

India

Proceedings

12. 1995

Crystal growth and characterization of gallium

arsinide and indium phosphide and nucleation kinetics of

binary, ternary and quaternary semiconductors

Proceedings of

International conference

on emerging optoelectronic technologies.

Tata McGraw-Hill Publishing Company Ltd., New

Delhi.

Proceedings

13. 1996-05

High efficiency tandem solar cells of compound

semiconductors on silicon

Technical Report of the

Institute of Electronics, Information

and Communication Engineers

(IEICE)

Refereed Journals

14. 1996 Deep level studies of AlGaAs/

GaAs grown by LPE


Refereed Journals

15. 1996

High quality AlGaAs layers grown on Si substrates by

MOCVD

J. Applied Physics

Refereed Journals

16. 1996 High efficiency AlGaAs/Si tandem solar cells under

improved growth conditions

Technical Digest 9th

International Photovoltaic Science and Engineering Conference (PVSEC-9)

Refereed Journals

14

17. 1996

Deep level transient spectroscopy study of AlGaAs layers grown on Si substrate

by MOCVD.

The Japan Society of

Applied Physics (43rd spring

meeting)

Refereed Journals

18. 1996

AFM, PL and DXRD studies of GaAs and AlGaAs grown on Si

substrates by MOCVD

The Japan Society of

Applied Physics (57th autumn

meeting)

Refereed Journals

19. January-

1997

MOCVD growth of high quality AlGaAs on Si substrate for high

efficiency solar cells

J. Crystal Growth

Refereed Journals

2 (Science Direct)

20. April- 1997

Effect of thermal cyclic growth on deep levels in AlGaAs/Si heterostructures Grown by

MOCVD

Applied surface science

Refereed Journals

2(Cite Web)

21. 01-

January-1997

MOCVD growth of high efficiency current -matched AlGaAs/Si tandem solarcell

J. Crystal Growth

Refereed Journals

42(My Science

Work

22. 1997

High quality GaAs epitaxial layers grown from Ga-As-Bi

solutions liquid phase Epitaxy

Japan. J. Appl. Phys.

Refereed Journals

11(IOP Science)

23. 1997

Liquid phase epitaxial system for the growth of III-V

compound semiconductors

Communications in

Instrumentation

Refereed Journals

24. January -

1998 Heteroepitaxial technologies on Si for high efficiency solar cells

Solar Energy Materials and

Solar Cells

Refereed Journals

14(Science Direct

25. June - 1997

Investigation on the concentration profiles of

arsenic atoms during LPE growth of GaAs from Ga-As-Bi

solution

Materials Chemistry and

Physics

Refereed Journals

10(Research gate)

26. January-

1997

Si surface preparation with Si beam irradiation on the growth

of III-V on Si

Proceedings of MRS 1997 fall

meeting December 1-5,

1997,

Refereed Journals

1(MRS online

Proceedings Library archive)

27. June- 1997

Investigations on the liquid phase epitaxial growth of GaAs

using Ga-As-Bi solution

Semi-conductor Devices

Refereed Journals

9(Science direct)

28. 1997 Liquid Phase Epitaxial system

for the growth of III-V Compound semiconductors

Communications in

Instrumentation

Refereed Journals

15

29. 1998

Optical and structural quality of GaAs epilayers from Gallium,

Bismuth Mixed solvents by LPE

Japan Journal of applied Physics

Refereed Journals

30. February

- 1998

On the bismuth composition dependent concentration of arsenic atoms during LPE

growth of GaAs layers from Ga-As-Bi solution

Physica Status Solidi (a)

Refereed Journals

8(Wiley Online Library)

31. August-

1998

Crystal growth of high quality hybrid GaAs heteroepitaxial

layers on Si substrate by metalorganic chemical vapor deposition and liquid phase

epitaxy

Journal of Crystal Growth

Refereed Journals

9(Science direct)

32. July-1998

Photoluminescence study of GaAs grown on Si by two step

growth and thermal cycle annealing using MBE

Proc.of 2nd World Con. and

Exhibition on Photovoltaic Solar Energy Conversion

---

33. 1999

Investigations on the estimation of arsenic atoms and growth of

GaAs epilayers from Bi solution

Materials Science and Engineering

Refereed Journals

34. January-

1999

Thermal cycle annealing and Si doping effects on the crystalline

quality of GaAs/Si grown by MBE

Inst. Phys. Conf. Ser.

IOP Publishing Co., UK.

---

35. 1999

Crystal growth of III-V materials on Si substrates for solar cell

applications

Proc. Of the tenth Inter nat. workshop on

the Physics of Semiconductor

Devices

--

16

36. April – 2000

Investigations on the undersaturated liquid phase

epitaxial growth of AlxGa1xAs


Refereed Journals

4(Research gate)

37. Novembe

r- 2000

Impurity investigation and structural quality determination of GaAs epilayers From mixed

solvents (Ga + Bi)


Refereed Journals

38. August-

2002

High performance 1.2µm highly strained InGaAs/GaAs

quantum well lasers

14th Indium Phosphide

and Related Materials

Conference, (Stockholm,

Sweden)

--- 5(IEEE Explore)

39. August-

2002

Morphological instability of GaInNAs quantum wells on

AlGaAs/GaAs distributed Bragg reflectors grown by

metalorganic vapor-phase epitaxy



Conference, (Stockholm,

Sweden)

---

40. 20 –

January- 2002

Preparation and characterization of

Ti/BaTiO3/InP MIS structures

Journal of Modern

Physics B

Refereed Journals

1(World Scientific)

41. 2002

Surface morphology and localized states of GaInNAs

single quantum wells grown by MOVPE


Refereed Journals

1(Research Gate)

1(Web of Science)

42. 2003 Effect of buffer layer thickness

on morphology and optical prperty of GaAs/Si


Refereed Journals

43. April- 2003

Morphological instability of GaInNAs quantum wells on Al-

containing layer grown by metalorganic vapor-phase

epitaxy

Applied Physics letters

Refereed Journals

11(Applied Physic letters) (IEEE

Explore)

44. 2003

Orientation dependence of thermal strain in InP layers on Si (001) substrates grown by epitaxial lateral overgrowth

J Applied Phys

Refereed Journals

17

45. 12-16- May - 2003

InGaAsP multi-quantum wells at 1.5µm wavelength grown on

indium phosphide templates on silicon



Conference, California,

USA

---

9(IEEE Explore)

20 – June - 2003

46. 25-30

May-2003

Thermal cycle annealing on the quality of GaN grown on

sapphire substrate by MOVPE

The fifth international

conference on nitride

semiconductors (ICNS-5),

Nara, Japan.

---

47. 25-27, Aug. 2003

Influence of initial growth conditions on the quality of GaN

grown on sapphire substrates

The 20th Nordic

semiconductor Meeting, Tampere, Finland.

----

48. 13-15, Oct. 2003

Selective Area Growth of GaInNAs/GaAs by MOVPE

5th International Workshop on Epitaxial Semi conductors on

Patterned Substrates and Novel

Index Surfaces

(ESPS-NIS), Stuttgart, Germany

--

1(My Science

Work) (01-January-

2004) (Elsevier)

49. 16–20, Dec. 2003

InGaN/GaN based monolithic white light emitting diodes grown

by MOVPE

Twelfth international workshop on the physics of semiconductor

devices (IWPSD),

Chennai, India

---

18

50. March –

2004

Effect of SeS2 treatment on the surface modification of GaAs

and adhesive wafer bonding of GaAs with silicon

Crystal Growth

Refereed Journals

3(Research Gate)

51. 2004

On the improvement of interface state density of

SiO2/nGaN and SiO2/n-AIGaN metal oxide semiconductor devices using water vapor

oxidation technique

Proc. of International workshop on crystal growth

and characterizati

on of Technolog-

ically important materials,

Anna University, Chennai,

India

---

52. March -

2004

Growth and characterization of selenium sulfide (SeS2) and

selenium tin sulfide (SeSnS2) microcrystals.

J. Crystal Growth

Refereed Journals

4(Research Gate)

53. July - 2004

Optical properties of high energy Tin (Sn5+) ion

irradiated MOCVD grown GaN on sapphire

Japan J. Applied Physics

Refereed Journals

2(Research Gate)

54. 2004

Gallium nitride growth process in MOVPE and Fabrication of

LEDs

Proc. of Indo, Japan

Workshop on Crystal

Growth and Applications of Advanced Materials for Optoelectroni

cs, Vijay Nikole

imprints Private Ltd, Chennai,

India

--- ---

19

55. 2004

Demonstration of silicon-oxy nitride Metal-Oxide-

Semiconductor High– Electron Mobility Transistors

Proc. of Indo, Japan

Workshop on Crystal

Growth and Applications

of Advanced

Materials for Optoelectroni

cs, Vijay Nikole

imprints Private Ltd, Chennai,

India

---- ----

56. Jan. 2005

Optical study of GaN epilayer grown by metal organic

chemical vapour deposition and pulsed laser

deposition

J. Cryst. Growth

Refereed Journals

5(Science Direct)

57. Jan. 2005

Studies on electron beam evaporated ZrO2/AlGaN/GaN

metal-oxide semiconductor high-electron mobility

transistors

Materials Science and Engineering

Physica Status Solidi

(a)

----

42 29(Wiley Online Library)

58. May – 2005

Demonstration of AlGaN/GaN metal-oxide-semiconductor

high-electron–mobility transistors with Silicon-Oxy Nitride as the gate insulator

Materials Science and Engineering -

B

Refereed Journals

11(Science Direct)

59. 15th Feb.

2005

Fabrication of double-insulator AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistor with SiO2 and SiN as gate

insulators

Physica Status Solidi

(a)

Refereed Journals

16(wiley Online Library)

60. 8th July 2005

A comparison on the electrical characteristics of

SiO2, SiON, and SiN as gate insulators for the fabrication of AlGaN/GaN MOSHEMTs

and MISHEMTs

Japan Journal of Applied Physics

Refereed Journals

4(IOP Science)

61. Oct. 2007

High energy irrdiation effects on AlGaN/GaN HFET devices

Semi-conductor

Science and Technology

Refereed Journals

3 (Research

Gate)

20

62. 16th Aug. 2007

Liquid Phase Epitaxial Growth of II-V semiconductor compound Zn3As2

J. Physics. D. Applied Physics

Refereed Journals

3 (IOP Science)

63. 15th

May - 2008

Influence of cooling rate on the liquid-phase epitaxial growth of

Zn3P2

J. Crystal Growth

Refereed Journals

5(Science Direct)

64. July - 2008

2 MeV ion irradiation effects on AlGaN/GaN HFET devices

Solid State Electronics

Refereed Journals

23 (Science Direct)

65. 05th Feb, 2008

Irradiation effects on AlGaN HFET devices and GaN Layers

J. Mater Sci: Mater

Electron

Refereed Journals

1(Research Gate)

66. 2008

Structural and surface characteristics of room temperature and low

temperature swift heavy ion implanted InAs and InSb

wafers

Nucl. Inst. and Meth. in Phys. Res. B

Refereed Journals

2(IAEA / INIS)

67. 10th Oct. 2008

Liquid phase epitaxial growth of Zn3As2 and the effect of 100

MeV Ni ion Irradiation


Refereed Journals

2 (Science Direct)

68. Oct. 2008

Reactive ion etching of GaN in SF6 + Ar and SF6 + N2 plasma

Semicond. Sci. Technol.

Refereed Journals

5(IOP Science)

69. May - 2009

Particulate assisted growth of ZnO nanorods and microrods

by pulsed laser deposition

Appl. Surf. Sci.

Refereed Journals

15(Research Gate)

70. 7th

May 2009

Reduced Charge Trapping in GaN MIS using Novel Gate

Oxide Deposition

Electronics Letters

Refereed Journals

2(IEEE Explore)

71. Oct. 2010

Studies on the Effect of Ammonia Flow Rate Induced

Defects in Gallium Nitride grown by MOCVD

J. Crystal Growth

Refereed Journals

11(Science Direct)

8(Research Gate)

72. Sept. 2010

Investigations on the nonidelaities in Pd/n-GaN Schottky diodes grown by

MOCVD

J. Alloys Compd.

Refereed Journals

5(Science Direct) 5(IEEE Explore)

73. 8th

Sept. 2010

Structural, Optical and Electrical characteristics of 70Mev Si5+ Ion Irradiation Induced nanoclusters of

Gallium Nitride”

Journal of materials Science

Refereed Journals

3(Springer Nature)

21

74.

Jan. 2009

Modifications of Defects Concentration Induced by Ammonia Flow rate and its Effects on gallium Nitride

Grown by MOCVD

Mater. Res. Soc. Proc.

Refereed Journals

75. 30th

Sept. 2010

Optical and field emission properties of ZnO nanoclusters deposited using high pressure

pulsed laser deposition

ACS Appl. Mater

Refereed Journals

56 47(Researc

h Gate)

76. 21st May 2010

Synthesis and characterization of nanocrystalline Gallium Nitride by nitridation of Ga-

EDTA complex

J. Alloys. Compd

Refereed Journals

11 (Science Direct)

77. Jan. 2010

Structural and magnetic properties of pure and cobalt

doped Gallium nitride nanocrystals

Mater. Res. Soc. Symp.

Refereed Journals

1

78. 1st

Jan. 2011

Growth of Zn3 AS2 on GaAs by liquid phase epitaxy and their

characterization


Refereed Journals

2(Web of Science)

3(Science Direct)

79. Feb. 2011

Structural, optical and Electrical characteristics of 70 Mev Si5+

Ion Irradiation Induced Nanoclusters of Gallium Nitride

Journal of Materials Science

Refereed Journals

6 (Springer)

80. 2011

Structural, characteristics of 70 Mev Si5+ Ion Irradiation

Induced Nanoclusters of Gallium Nitride

International Journal of

Nanoscience

Refereed Journals

Same 74

81.

15th Jan.

2012 (online)

Synthesis and characterization of pure and Co-doped gallium

nitride nanocrystals

Appl. Nanoscience

Refereed Journals

1(Springer)

82.

15th Jan. 2012

Morphological transistion of ZnO nanostructures influenced

by magnesium doping

Appl. Surf. Sci.,

Refereed Journals

5(Science Direct)

83. 2012

Significance of initial stages on the epitaxial growth of AIN

using High Temperature Halide Chemical Vapor Deposition”

Phys. Status Solidi C

Refereed Journals

1

22

84. Jun. 2012

Effects of AIN nucleation layer on the growth of AIN

films using high temperature hydride vapour phase

epitaxy

Journal of Alloys and compounds

Refereed Journals

14 (Science Direct)

85. 15th Oct. 2012

Growth and Characterization of AlxGal-xN on GaN/A12O3

Proceedings of SPIE

Refereed Journals

86. 15th Oct. 2012

Studies on the dislocation densities of gallium nitride

grown by MOCVD

Proceedings of SPIE

Refereed Journals

87. 15th Oct. 2012

Photon decay time studies on

Al0.45Ga0.55N/Al0.18Ga0.82N/ Al0.45Ga0.55N double

heterostructures grown on sapphire substrate by

MoCVD

Proceeding of SPIE

Refereed Journals

88. 15th Oct.

2012

On the emission state sin MQWs of InGaN/GaN and

A1GaN based SQW

Proceedings of SPIE

Refereed Journals

89. 2013 (First online)

Structural and Carrier Dynamics of GaN and AlGaN-based Double

Heterostructures in the UV Region

Journal of Electronic Materials

Refereed Journals

2 (Research

Gate) 2 (Springer)

90. 03th

July 2013

Rapid growth of m-plane oriented gallium nitride nanoplates on silicon substrate using laser-assisted metal organic

chemical vapour deposition

Cryst. Growth Design

Refereed Journals

1

91. 1st Sept.

2014

Structural and optical characterization of AlGaN/GaN layers

Journal of Crystal Growth Design

Refereed Journals

5 (Science Direct)

92. 15th

Dec. 2014

Studies on dislocation and surface morphology of

AlxGal-xN/GaN heterostructures grown by

MOCVD

Journal of Alloys and

Compounds

Refereed Journals

5 (Science Direct)

93. 3rd

Jan. 2014

‘Controlled nucleation and growth of nanostructures by employing surface modified

GaN based layers/heterostructurdes as

bottom layer’

Royal Society of Chemistry

Advances

Refereed Journals

2

23

94. 2014

Effect of Temperature on Quality and Composition of AlGaN Epilayers Grown by

MOVPE’

AIP conference

Proceedings

Refereed Journals

95. 2014 Growth and Characterization

of AlInGaN/AIN/GaN grown by MoCVD’,

Physics of semiconductor

e devices, Environmental Dcience and Engineering,

Springer international Publishing

Refereed Journals

Google Books

96. 2014

Structural optical and electrical studies of AlGaN/GaN

heterostructures with AlN interlayer grown on sapphire

substrate by MOCVD

Physics of semi-

conductore devices,

Environmental Dcience and Engineering,

Springer international Publishing

Refereed Journals

Google books

97. Apr. 2014

Synthesis, morphology and optical properties of GaN and

AlGaN semiconductor nanostructures

AIP Conference Proceedings

Refereed Journals

98. 2014

Preparation and characterization of ZnO

nanorods, nanowalls, and nanochains

Springer Science in Materials Science

Refereed Journals

1

99. May- 2014

Morphology and spectroscopic studies on nanostructured wurtzite ZnO-GaN solid

solution for photocatalytic applications

Advance Science letters

Journal of Computational and Theoretical

Nanoscience

Refereed Journals

2

100. July

2014

Synthesis and characterization of brownmillerite SrFeO2.5 in

nanostructured form

Optical Materials

Refereed Journals

6(Research gate)

101. Nov. 2014

Hydrothermal synthesis of chalcopyrite CuInS2, CuInSe2

and CuInTe2 Nanocubes and their

characterization

Current Applied Physics

Refereed Journals

4 (Science direct)

102. Nov. 2014

Influence of the V/III ratio in the gas phase on thin epitaxial

AlN layers grown on (0001) sapphire by high temperature hydride vapor phase epitaxy

Thin Solid Films

Refereed Journals

3(Science Direct)

24

103. Dec. 2014

Growth of AlN nanostructure on GaN using MOCVD


---

104. 2014 “Pure and nd added NBT-BT single crystals-Growth and

their characterization

AIP Conference proceedings

----

105. 15th Mar.

2015

Influence of intial growth stage on AlN epilayers grown by

metalorganic chemical vapour deposition


Refereed Journals

3(Science direct)

106. 5th

Oct. 2015

Structural, morphological and optical studies on CuAlS2 and CuAlSe2 nanorods prepared

by hydrothermal method


Compounds

Refereed Journals

107. June – 2015

Growth and characterization of InXGa1-XN/GaN single

quantum well prepared by MOCVD

AIP Conference proceedings

---

108.

15th June – 2015

(online) 2016

(volume)

Time-Resolved Photoluminescence Studies

on AlGaN Double Heterostructures

IETE Technical Review

Refereed Journals

109. 2015

Structural, optical and thermal properties of CuGaS2 crystals by chemical vapor transport

(CVT) method

Optic – International Journal of Light and

electron optics

Refereed Journals

110. July

2015

The effect of growth temperature on structural

quality of AlInGaN/AlN/GaN heterostructures grown by

MoCVD

J mater Sci Mater Electron

Refereed Journals

2(Springer)

111. Aug. 2015

Effect of swift heavy ion (SHI) irradiation on the structural and optical properties of N

implanted CVT grown ZnSe single crystals

Materials Science in

Semiconductor Processing

Refereed Journals

2(Research Gate)

112. Sept. 2015

Realization of high photocatalytic hydrogen

generation activity by nanostructured Ga1-xZnxO1-zNz

solid-solution without cp-catalyst,

Journal of Hydrogen

Energy

Refereed Journals

3(Research Gate)

25

113. 28th

Oct-2015

Anomalous room temperature magnetoresistance in

brownmillerite Ca2Fe2O5

An International Journal to

Further The Chemical Sciences

Refereed Journals

2(Research gate)

114. Dec. 2015

Growth and characterization of tris thiourea magnesium zinc

sulphate single crystals

Optik – Internation Journal for Light and Electron Optics

Refereed Journals

5(Science Direct)

2(Reserach Gate)

115. Dec. 2015

Effect of gamma ray irradiation on sodium borate single

crystals

Radiation Physics and chemistry,

Refereed Journals

1(Science Direct)

116. Dec. 2015

Preparation of GaN on GaAs (100) substrate by annealing

and post-nitridation


Refereed Journals

117. 2016

Influence on TMIn flow rate on structural and optical quality of AlIGaN/Gan epilayers grown

by MOCVD

J Alloys Compd

Refereed Journals

1(Research gate)

118. 2016 Structural and electrical

characteristics of GaN, n-GaN and AlxGa1-xN,

J Alloys Compd

Refereed Journals

2(Research Gate)

119. April 2016

Synthesis, structural, morphological and electrical

properties of NBT–BT ceramics for piezoelectric

applications

Ceramics International

Refereed Journals

2(Research Gate)

120. April 2016

Cu catalyst assisted growth of GaN nanowires on sapphire substrate for p-type behavior

Optik - International Journal for Light and Electron Optics

Refereed Journals

121. May 2016

Structural, morphology and optical properties of

nanocrystalline GaN and AlGaN alloys prepared by

EDTA complex route

Materials Research Bulletin

Refereed Journals

1(Science Direct)

122. 1st May 2016,

Growth of NBT-BT single crystals by flux method and

their structural, morphological and electrical

characterizations


Refereed Journals

26

123. May - 2016

Investigation on structural, optical and electrical

properties of Cp2Mg flow varied p-GaN grown by

MOCVD


--- 1(citation)

124. May - 2016

Synthesis of GaN:ZnO solid solution by solution

combustion method and characterization for

photocatalytic application


---

125. July 2016

Investigation of Er3+, Yb3+, Nd3+ doped yttrium calcium

oxyborate for photon upconversion applications

Solid State Sciences

Refereed Journals

126. Sept. 2016

Growth and characterization of neodymium and ytterbium

doped barium chloride dihydrate single crystals


Refereed Journals

127. Sept. 2016

Structural, surface potential and optical studies of AlGaN

based double heterostructures irradiated by 120 MeV Si9+

swift heavy ions


Compounds,

Refereed Journals

128.

22nd Sept. 2016

(online)

Growth and Comparison of Single Crystals and

Polycrystalline Brownmillerite Ca2Fe2O5,


Refereed Journals

129. Oct. 2016

Influence of AlN thickness on AlGaN epilayer grown by

MOCVD

Superlattices and Micro-structures

Refereed Journals

130. Nov. 2016

Effect of Growth Temperature on InGaN/GaN

Heterostructures Grown by MOCVD,


Refereed Journals

131. 7th Dec. 2016

COMPARATIVE STUDY ON Ga1-xZnxN1-yOy

OXYNITRIDE SYNTHESIZED BY DIFFERENT

TECHNIQUES AND ITS APPLICATION IN

PHOTOCATALYTIC HYDROGEN PRODUCTION


Refereed Journals

132. 1st March

2017

Electronic excitation induced structural and optical

modifications in InGaN/GaN quantum well structures grown

by MOCVD

Nuclear Instruments

and Methods in Physics Research Section B:

Beam Interactions

Refereed Journals

1(citation)

27

with Materials and Atoms

133. 1st April

2017

Effect of low Cobalt doping on morphology and properties of

calcium ferrite and its application as cathode in Solid

Oxide Fuel Cell


Refereed Journals

2(citation)

134. 3rd May 2017

Thermal and optical studies on induced smectic phases of inter molecular hydrogen

bonded liquid crystals between decyloxy benzoic

acid and citric acid

Molecular

Crystals and Liquid

Crystals

Refereed Journals

2(citation)

135. 19th May

2017

Effect of varying Ga content in ZnO: GaN solid solution synthesized by solution

combustion technique for photocatalytic applications


Refereed Journals

136. 19th May

2017

Effect of silicon doping in InGaN/GaN heterostructure

grown by MOCVD


Refereed Journals

137. 19th May

2017

Electrochemical performance of brownmillerite calcium ferrite for application as

supercapacitor


Refereed Journals

1(citation)

138. June 2017

Optical investigations and strain effect in AlGaN/GaN

epitaxial layers

Journal of Physics:

Conference Series

Refereed Journals

139. 5th June

2017

Correlation between indium content in monolithic

InGaN/GaN multi quantum well structures on

photoelectrochemical activity for water splitting


Compounds

Refereed Journals

2 (citation)

140. 15th June

2017

Self-catalytic growth of AlN microrods on sapphire

substrate


Refereed Journals

141. 15th June

2017

Growth and comparison of single crystals and

polycrystalline brownmillerite Ca2Fe2O5


Refereed Journals

3 (citation)

142. 15th June

2017

Effect of growth temperature on InGaN/GaN

heterostructures grown by MOCVD


Refereed Journals

2 (citation)

143. 1st Dec 2017

Influence of Hydrogen Bond on Thermal and Phase

Transitions of Binary Complex Liquid Crystals

Russian Journal of Physical

Chemistry A

Refereed Journals

28

144. 31st Dec

2017

Blue-Green-Red Emission From the InGaN/GaN

Heterostructures Grown By Metal Organic Chemical

Vapour Deposition

Materials Today:

Proceedings

Refereed Journals

145. 15th Feb

2018

The role of indium composition on thermo-electric properties

of InGaN/GaN heterostructures grown by

MOCVD


Compounds

Refereed Journals

2 (citation)

146. 1st March

2018

Catalyst-free deposition of few layer graphene on c-plane

sapphire substrates by drop casting technique

Journal of Materials Science:

Materials in Electronics

Refereed Journals

1 (citation)

147. 1st March

2018

Formation of graphitic and diamond-like carbon by low

energy carbon ion implantation on c plane

sapphire substrate

Thin Solid Films

Refereed Journals

1 (citation)

148. 30th

March 2018

Large area ultraviolet photodetector on surface modified Si: GaN layers

Applied Surface Science

Refereed Journals

3 (citation)

149. 15th April

2018

Growth of gold-palladium alloy catalyzed gallium nitride

nanowires by chemical vapour deposition

Materials Letters

Refereed Journals

1 (citation)

150. 18th April

2018

Circular Transmission Line Measurement (CTLM) Studies on Epitaxial Layers of AlGaN

Materials Today:

Proceedings

Refereed Journals

151. 22nd June

2018

Fabrication of Schottky barrier diodes on clump of gallium nitride nanowires grown by chemical vapour deposition

Applied Surface Science

Refereed Journals

152. 1st Aug 2018

Effect of gamma irradiation on AlInGaN/AlN/GaN

heterostructures grown by MOCVD

Superlattices and

Microstructures

Refereed Journals

153. 1st Aug 2018

Hybrid gallium nitride/organic heterojunction with improved

electrical properties for optoelectronic applications

Journal of Materials Science

Refereed Journals

154. 1st Aug 2018

Development of Zn1-x-yGaxCoyO1-zNz as a non-

oxide semiconductor material with visible light

photoelectrochemical activity

Vacuum Refereed Journals

155. 15th Oct

2018

Passivation of yellow luminescence of MOCVD

grown InGaN/GaN

Nuclear Instruments

and Methods

Refereed Journals

29

heterostructures by Nitrogen-ion implantation

in Physics Research Section B:

Beam Interactions

with Materials and Atoms

156. 30th Aug

2018

Investigations on morphology, growth mode and indium incorporation in MOCVD

grown InGaN/n-GaN heterostructures

Optik Refereed Journals

C. Participation and Scholarly Presentations in Conference:

CONFERENCES, WORKSHOPS AND REFRESHER COURSES ORGANISED

1. November 2004

Co-Coordinator, UGC Refresher course on Recent Trends in Crystal Growth and Characterization, Nov 1-7, Anna University, Chennai, India

2. December 2004

Coordinator, Indo-Japan workshop on Crystal Growth and Applications of Advanced Materials

for Optoelectronics, December 7-10, Anna University, Chennai, India

3. October 2008

Indo-UK Seminar on Bio-Technology was jointly organized by the British Council, the Centre for

International Affairs and the Centre for Biotechnology at the Centre for Biotechnology, Anna

University, Chennai on 17th and 18th October 2008.

4. November 2008 A joint meeting of scientists and delegates from Russia, facult y of the Centre for International

Affairs and the Centre for Bio-technology, Anna University, Chennai was conducted on 20th

and 21st

November 2008 under the banner of Indo – Russian Seminar on Biotechnology

5. January 2009 Indo –US workshop on “Visible and Ultra Violet Sources for Solid State Lighting and Water

Purification” was jointly organized by Crystal Growth Centre and the Centre for International during 5

th to 7

th January 2009

6. August 2009

Three day International workshop on “Content based Image Fusion and Retrieval” in

collaboration with the faculty of School of Electronics and Communication and Electrical

Engineering, University of Hertfordshire, UK during 7 - 9 August 2009 was jointly conducted

by Department of Electronics, MIT Campus and the Centre for International Affairs, Anna

Universit y Chennai.

30

7. August 2009

The Centre for International Affairs organized an Indo-US seminar on research perspective for

University Excellence: A US model for India on 10th

August 2009 in collaboration with the University of Nebraska-Lincoln, USA.

8. September 2009 An Indo - UK Seminar on Biotechnology “UK and Indian Perspectives” was jointly organized by

the Centre for Biotechnology and the Centre for International Affairs, Anna University, Chennai

during 11th

and 12th

September 2009

9. October 2009 The third “International Workshop on advances in Nano Science and Technology” was held

between 28th

and 30th

October 2009 jointly organized by International Centre for theoretical Physics (ICTP), Trieste, Italy, Crystal Growth Centre and the Centre for International Affairs, Anna University, Chennai.

10. December 2009 The Centre for International Affairs and the Department of Aerospace Engineering, MIT

campus jointly organized the Indo-German workshop on advanced technologies during 3 – 4 December 2009.

11. January 2010

International Conference on Advances in Industrial Engineering Applications (ICAIEA –

2010) was jointly organized by Department of Industrial Engineering and the Centre for

International Affairs, Anna University, Chennai during January 6 - 8, 2010.

12. January 2010

International workshop on “Materials Science for Energy Storage” was jointly organized

by the Department of Physics and the Centre for International Affairs, Anna University,

Chennai during 18 – 22 January 2010

13. August 2010 The International Conference on “Emerging Technologies in Renewable Energy” (ICETRE

- 2010) was organized by Anna University, Chennai during 18-21 August, 2010 at the College of Engineering, Guindy Campus. The Centre for International Affairs jointly organized this International Conference in association with faculty members from Crystal Growth Centre, Institute for Energy Studies and IC Engineering Division.

14. August 2010

The Centre for International Affairs organized a “Workshop on Fatigue of Materials and

Fracture Mechanics” during 10-12 August 2010 in association with University of Tours, France.

15. September 2010

An “INDO – ITALIAN advanced level workshop” was conducted jointly by Crystal Growth

Centre and the Centre for International Affairs, Anna University, Chennai during 8 – 10

September 2010

16. October 2010

A one-day INDO–SWEDISH International Workshop on “Applied Engineering” was jointly

organized by Anna University, Chennai, India and Royal Institute of Technology – KTH

& Uppsala University, Sweden on 22 October 2010

31

17. January 2011 International Workshop on “Wide Band Gap Semiconductor Nanostructures” was jointly

organized by Crystal Growth Centre and Centre for International Affairs during 10-11

January 2011

18. March 2011 International Workshop on “Biomedical Sciences and Technologies” was conducted jointly by

the Department of Electronics and Communication Engineering and Centre for International

Affairs, Anna University during 02 – 04 March 2011

19. September 2011 Indo-Japan Workshop on “Recent Trends in Materials and Devices” was jointly organized by

Hiroshima University, Japan and Centre for International Affairs, Anna University, Chennai

during 05 – 06 September 2011

20. December 2011 International Workshop on “Palaeoclimate and Human Dispersal during Marine

Isotope Stage 3” was jointly organized with the Department of Geology during 12-17 December

2011

21. February 2012

International conference on “Climate change and CO2 Management: Mitigation, Separation and

Utilization” was organized by Centre for Environmental Sciences and Centre for International

Affairs, Anna University, Chennai during 2 – 3 February 2012

22. July 2012

Indo-UK Workshop on Advanced Materials for Engineering and Technology during 27-28 July

2012 at Anna University, Chennai .

23. December 2012

International Workshop on Crystal Growth and Characterization of Advanced Materials

and Devices during 16-19 December 2012 at Anna University, Chennai.

24. December2012

Twenty Fourth National Seminar on Crystal Growth (XXIV-NSCG) during 20-22 December


25. January 2013 International Workshop on Renewable Energy, Climate Change & Energy Mangement

2013 during 24-25 January 2013 at Anna University, Chennai .

26. January 2013

Second International Workshop on Advanced Functional Nanomaterials SIWAN- 2013

during 28-30 January 2013 at Anna University, Chennai .

27. August 2013 Workshop on Powder, Nano and Thin film characterization by X-ray diffraction (X’Raydiate

2013) during 28-30 August 2013, Anna University, Chennai.

28. February 2015

International Symposium on semiconductor materials and devices (ISSMD-3), during 02-05

February 2015

32

29. February 2015

Twenty Fifth National Seminar on Crystal Growth (XXV-NSCG) during 05-06 February


C. II International Conferences

S.No. Date Title of Conference or Institution

Nature of

Duties

(Papers

Presented/

Organized)

1. 10-15

August 1989

International Conference

ICCG-9, Sendai, Japan

Presented

2. 3-7 June

2002

International Conference

ICMOVPE

Berlin, Germany

Presented

3. 25-30

May

2003

The fifth international conference on nitride

semiconductors

(ICNS-5), Nara, Japan.

Presented

4. 09-10

December

2010

International Conference on Compound

Semiconductors,

Seoul, Korea

Presented

5. 6-8

January

2010

International Conference on Advances in

Industrial Engineering Applications (ICAIEA-

2010),


Organized

6. 18-21

August

2010

The international Conference on “Emerging

Technologies in renewable Energy” (ICETRE

– 2010), Anna University, Chennai

Organized

7. 02-03

February

2012

International Conference on “Climate change

and Com2 management: Mitigatio,

Separation and utilization”


Organized

8. 1992 13th Internat.l conf. on nucleation and

atmospheric aerosols

Presented

33

9. 1995 International conference on

emerging optoelectronic

technologies

Presented

10. 01-05

July

1996

8th International Conference on

Solid Films and surfaces, Osaka,

Japan.

Presented

11. 11-15

November

1996

9th International Photovoltaic

Science and Engineering

Conference (PVSEC-9), Miyazaki,

Japan.

Presented

12. 06-100

July

1998

2nd World Con. and Exhibition on

Photovoltaic Solar Energy

Conversion, Vienna

Presented

13. 20-24

September

1999

Eleventh International Conference

on Photovoltaic Science and

Engineering

Conference, Sapporo, Japan.

Attended

14. 1-3

March

2000

Fifth National conference on High

pressure Science and Technology,

Anna University, Chennai.

Attended

15. 22-24

March

2000

First Asian Conference on Solid-

state Ionic devices, Anna

University, Chennai.

Attended

16. 9th August 2000 National conference on Crystal

Growth (Tamil), Anna

University, Chennai.

Attended

17. 3-7

June

2002

Eleventh International Conference

on Metalorganic Vapor Phase

Epitaxy (IC

MOVPE-XI), Ludwig-erhard-haus,

Berlin, Germany,

Attended

18. 2002 14th Indium Phosphide and Related

Materials Conference, (Stockholm,

Sweden)

Presented

34

19. 2002 14th Indium Phosphide and Related

Materials Conference, (Stockholm,

Sweden)

Presented

20. 12-16

May

2003

15th Indium Phosphide and Related

Materials Conference, California,

USA

Presented

9. Research Projects:

S.No. Funding Agency

Nature of Project Duration of

Project

Amount of Grant

(Rupees)

1. MHRD Development of Semiconductor laser for optoelectronic devices

1995-1997 Rs. 15.00 lakhs

2. ISRO Development of Germanium substrates suitable for epitaxial growth of GaAs layers for space quality solar cells

1997-2004 Rs. 10.80 lakhs

3. NSC Oxygen irradiation effects on InGaAs based devices

2001-2004 Rs. 0.45 lakhs

4. NSC Fabrications of GaAs schottky diode and PN junction solar cells by wafer bonding on silicon substate using chalcogenides

2002-2005 Rs. 2.34 lakhs

5. NSC Growth and characterization of alloys of INSb abd InAs epitaxial layers for infrared applications

2005-2008 Rs. 3.33 lakhs

6. Tamil Nadu Government

Establishment of national Facility for Semiconductor Materials and Devices for Nanotechnology at Anna University, Chennai

2008 Rs. 50.00 lakhs

7. DST, New Delhi

Semiconductor Nanostructures

2008-2011 Rs. 6.1624 crores (about

1.5 million USD)

8. DST, New Delhi

Growth and Characterization of AlGaN Heterostructures

2010-2013 Rs.1.8 crores

9. DRDO, New Delhi

Supply of High resistive GaN epitaxial layers

2010-2011 Rs. 20 lakhs

10. DST, New Delhi

Surface modified GaN/InGaN heterostructures with AIGaN

2014-2017 Rs. 60.00 lakhs

35

barrier layers for photovolatics applications

11. UGC-DAE, Indore

Synthesis and characterization of poly crystalline and single crystals of oxygen deficient perovskite caFeO2.5 and SrFeO2.5

2014-2017 Rs. 6.39 lakhs

12. IUAC-Delhi Irradiation effects on InGaN and AlInGaN epilayers grown by MOCVD

2015-2018 Rs. 5.60 lakhs

10. Consulting Experience: Undertaken consultancy work in project mode with

ISRO Rs.15 lakhs and DRDO Rs19.90 lakhs

11. Honours / Awards & Fellowships for outstanding work:

S.No. Name of Award/ fellowship etc.

Elected/Honorary Fellow

Awarded by Year Award

1. Junior Research

Fellow

award Anna University,

Madras

May1986 –

June 1990

2. Youngsters

attractive paper

award winner

(140000 Yen)

award 9th international

Conference on

crystal growth,

Sendai, Japan

August

1989

3. CSIR Senior

Research fellow


Madras

June1990 -

Sept.1991

4. Postdoctoral

fellow

award NIT, Japan April 1995 –

March 1997

5. Monbusho Fellow

thorough MHRD

India

award Nagoya Institute of

Technology, Japan

April 1995 -

March 1997

6. STA Fellow

Government of

Japan

award Electrotechnical

Laboratory,

Tsukuba, Japan

July1997 –

July 1999

7. Active researcher

Award 2011


Chennai

2011

8. Youngsters

attractive paper

award 9th international

Conference on

August

1989

36

award winner

(140000 Yen)

crystal growth,

Sendai, Japan

12. No. of Research Scholars Successfully guided/completed:

(completed : 18, Ongoing : 2 Ph.D. - Fulltime with Fellowship)

1. S.SARAVANAN

Ph.D 1998 GROWTH AND CHARACTERIZATION OF GaAs

AND AlGaAs EPILAYERS ON GaAs AND Si

SUBSTRATE BY LPEAND MOCVD

2. P.PREMCHANDER Ph.D 2004 PULSED LASER DEPOSITION OF GaN,

IRRADIATION OF GaN AND WAFER BONDING

3. K.BALACHANDER Ph.D 2005 FABRICATION AND ELECTRICAL

CHARACTERIZATION OF ALGAN/GAN METAL-

INSULATOR-SEMICONDUCTOR HIGH-ELECTRON

MOBILITY –TRANSISTORS (MISHEMTS) WITH

DIFFERENT GATE INSULATORS

4. SONIA

GNANAPRAGASM

Ph.D 2007 INVESTIGATIONS ON HIGH AND LOW ENERGY

RADIATION EFFECTS ON AlGaN/GaN HFET

DEVICES AND THICK GaN LAYER

5. S.SUDHAKAR

Ph.D 2008 LIQUID PHASE EPITAXIAL GROWTH OF InAs,

Zn3As2 AND Zn3P2 AND EFFECTS OF SWIFT

HEAVY ION IRRADIATION

6. S.SURESH Ph.D 2010 EFFECTS OF V/III RATIO AND IRRADIATION

INDUCED DEFECTS ON STRUCTURAL,OPTICAL

,ELECTRICAL AND DEVICE CHARACTERISTICS

OF GALLIUM NITRIDE

7. V.GANESH

Ph.D 2010 SYNTHESIS AND CHARACTERIZATION OF PURE

AND COBALT DOPED GaN NANOCRYSTALS

8. T.PREMKUMAR

Ph.D 2010 GROWTH AND CHARACTERIZATION OF ZnO

NANORODS,NANOWALLS AND NANOCHAINS

USING PULSED LASER DEPOSITION

9. M.NAGARAJAN Ph.D 2013 HETEROEPITAXIAL GROWTH OF ZINC

ARSENIDE OF GALLIUM ARSENIDE AND INDIUM

PHOSPHIDE ON SILICON

10. M.BALAJI

Ph.D 2013 EPITAXIAL GROWTH AND CHARACTERIZATION

OF AlN AND EFFECTS OF ION IRRADIATION ON

AlGaN/GaN HETEROSTRUCTURES

11. P. ARIVAZHAGAN Ph.D 2015 STRUCTURAL , OPTICAL AND ELECTRICAL

STUDIES ON GaN, AlGaN AND AlGaN BASED

DOUBLE HETEROSTRUCTURES GROWN BY

37

METAL ORGANIC CHEMICAL VAPOR

DEPOSITION(MOCVD)

12. R. RAMESH

Ph.D 2015 GROWTH AND CHARACTERIZATION OF

AlGaN/GaN HETEROSTRUCTURES GROWN BY

METAL ORGANIC CHEMICAL VAPOUR

DEPOSITION (MOCVD)

13. R. LOGANATHAN Ph.D 2016 EPITAXIAL GROWTH OF AlInGaN, AlGaN AND AlN

HETEROSTRUCTURES BY MOCVD

14. B. KUPPULINGAM

Ph.D 2016

GROWTH AND CHARACTERIZATIONS OF GaN,

AlGaN AND AlN SEMICONDUCTOR

NANO/MICROSTRUCTURES

15. M. JAYASAKTHI Ph.D 2016

EPITAXIAL GROWTH AND CHARACTERIZATION

OF AlGaN/GaN AND AlGaN/AlN

HETEROSTRUCTURES

16. K. SREENADHA RAO Ph.D 2017 GROWTH AND CHARACTERIZATION OF NBTBT

SINGLE CRYSTALS SYNTHESIS AND

IRRADIATION EFFECTS ON NBT BT CERAMICS

FOR PIEZOELECTRIC APPLICATIONS

17. K. PRABAKARAN Ph.D 2017

MOCVD GROWTH AND CHARACTERIZATION OF

InGaN AND InGaN/GaN QUANTUMWELL

STRUCTURES AND EFFECT OF ION

IRRADIATION

18. S. SURENDER Ph.D

(Sub-

mitted)

2018 INVESTIGATIONS ON InGaN/GaN MQW

STRUCTURES GROWN BY MOCVD FOR

PHOTOVOLTAIC APPLICATIONS

Prof. Dr.K. BASKAR

Crystal Growth Centre

Anna University,

Chennai 600 025, INDIA

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