BFP420F Data Sheet - PC Components · TEAKLITE™ of CEVA, Inc. TEKTRONI X™ of Tektronix Inc....
Transcript of BFP420F Data Sheet - PC Components · TEAKLITE™ of CEVA, Inc. TEKTRONI X™ of Tektronix Inc....
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RF & Protect ion Devices
Data Sheet Revision 1.0, 2012-01-30
BFP420FLow Noise Silicon Bipolar RF Transistor
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Edition 2012-01-30Published by Infineon Technologies AG 81726 Munich, Germany© 2012 Infineon Technologies AG All Rights Reserved.
Legal DisclaimerThe information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.
InformationFor further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com).
WarningsDue to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office.Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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BFP420F
Data Sheet 3 Revision 1.0, 2011-09-05
Trademarks of Infineon Technologies AGBlueMoon™, COMNEON™, C166™, CROSSAVE™, CanPAK™, CIPOS™, CoolMOS™, CoolSET™, CORECONTROL™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, EUPEC™, FCOS™, HITFET™, HybridPACK™, ISOFACE™, I²RF™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PROFET™, PRO-SIL™, PRIMARION™, PrimePACK™, RASIC™, ReverSave™, SatRIC™, SensoNor™, SIEGET™, SINDRION™, SMARTi™, SmartLEWIS™, TEMPFET™, thinQ!™, TriCore™, TRENCHSTOP™, X-GOLD™, XMM™, X-PMU™, XPOSYS™.
Other TrademarksAdvance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, PRIMECELL™, REALVIEW™, THUMB™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Sattelite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited.Last Trademarks Update 2010-03-22
BFP420F, Low Noise Silicon Bipolar RF Transistor Revision History: 2011-09-05, Revision 1.0Previous Revision: Rev. 1.0Page Subjects (major changes since last revision)
This datasheet replaces the revision from 20 April 2007.The product itself has not been changed and the device characteristics remain unchanged.Only the product description and information available in the datasheet has been expanded and updated.
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BFP420F
Table of Contents
Data Sheet 4 Revision 1.0, 2011-09-05
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3 Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104.1 DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104.2 General AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104.3 Frequency Dependent AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114.4 Characteristic DC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 184.5 Characteristic AC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
5 Simulation Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
6 Package Information TSFP-4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Table of Contents
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BFP420F
List of Figures
Data Sheet 5 Revision 1.0, 2011-09-05
Figure 1 Total Power Dissipation Ptot = f (Ts) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9Figure 2 Testing Circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11Figure 3 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter . . . . . . . . . . . . . . . . . 18Figure 4 DC Current Gain hFE = f (IC), VCE = 3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18Figure 5 Collector Current vs. Base Emitter Voltage IC = f (VBE), VCE = 3 V. . . . . . . . . . . . . . . . . . . . . . . . . 19Figure 6 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 3 V . . . . . . . . . . . . . . . . . . . . 19Figure 7 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 3 V . . . . . . . . . . . . . . . . . . . . 20Figure 8 Collector Emitter Breakdown Voltage VCER = f (RBE), IC = 1 mA . . . . . . . . . . . . . . . . . . . . . . . . . . 20Figure 9 Transition Frequency fT = f (IC), f = 2 GHz, VCE = Parameter. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21Figure 10 3rd Order Intercept Point OIP3 = f (IC), ZS = ZL= 50 Ω, VCE, f = Parameters. . . . . . . . . . . . . . . . . 21Figure 11 3rd Order Intercept Point at output OIP3 [dBm] = f (IC, VCE), ZS = ZL= 50 Ω, f = 1900 MHz . . . . . 22Figure 12 Compression Point at output OP1dB [dBm] = f (IC, VCE), ZS = ZL= 50 Ω, f = 1900 MHz . . . . . . . . . 22Figure 13 Collector Base Capacitance CCB = f (VCB), f = 1 MHz. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23Figure 14 Gain Gma, Gms, IS21I² = f (f), VCE = 3 V, IC = 15 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23Figure 15 Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . 24Figure 16 Maximum Power Gain Gmax = f (VCE), IC = 15 mA, f = Parameter in GHz. . . . . . . . . . . . . . . . . . . 24Figure 17 Input Matching S11 = f ( f ), VCE = 3 V, IC = 4 / 15 / 45 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25Figure 18 Source Impedance for Minimum Noise Figure Zopt = f ( f ) , VCE = 3 V, IC = 4 / 15 mA . . . . . . . . . 25Figure 19 Output Matching S22 = f ( f ), VCE = 3 V, IC = 4 / 15 / 45 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26Figure 20 Noise Figure NFmin = f ( f ), VCE = 3 V, IC = 4 / 15 mA, ZS = Zopt . . . . . . . . . . . . . . . . . . . . . . . . . . 26Figure 21 Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . 27Figure 22 Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω, f = Parameter in GHz. . . . . . . . . . . . . . . . . . . . 27Figure 23 Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29Figure 24 Package Foot Print . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29Figure 25 Marking Example (Marking BFP420F: AMs) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29Figure 26 Tape Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
List of Figures
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BFP420F
List of Tables
Data Sheet 6 Revision 1.0, 2011-09-05
Table 1 Maximum Ratings at TA = 25°C (unless otherwise specified). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8Table 2 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9Table 3 DC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10Table 4 General AC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10Table 5 AC Characteristics, f = 150 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11Table 6 AC Characteristics, f = 450 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12Table 7 AC Characteristics, f = 900 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12Table 8 AC Characteristics, f = 1500 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13Table 9 AC Characteristics, f = 1900 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14Table 10 AC Characteristics, f = 2400 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15Table 11 AC Characteristics, f = 3500 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15Table 12 AC Characteristics, f = 5500 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
List of Tables
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TSFP-4-1
1
24
3
Product Name Package Pin Configuration MarkingBFP420F TSFP-4-1 1 = B 2 = E 3 = C 4 = E AMs
Low Noise Silicon Bipolar RF Transistor
BFP420F
Data Sheet 7 Revision 1.0, 2011-09-05
1 Features• Low noise high gain silicon bipolar RF transistor• Based on Infineon´s reliable very high volume 25 GHz
silicon bipolar technology• 0.9 dB minimum noise figure typical at 900 MHz, 3 V, 4 mA• 16 dB maximum gain (Gma) typical at 2.4 GHz, 3 V, 15 mA• 28 dBm OIP3 typical at 2.4 GHz, 4 V, 40 mA• 16.5 dBm OP1dB typical at 2.4 GHz, 4 V, 40 mA• Popular in discrete oscillators• Thin, small, flat, Pb-free (RoHS compliant) and Hal-free
(“green”) package with visible leads
Applications
As Low Noise Amplifier (LNA) in• Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB)• Multimedia applications such as mobile/portable TV, CATV, FM Radio• ISM applications like RKE, AMR and ZigbeeAs discrete active mixer in RF FrontendsAs active device in discretes oscillators
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
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BFP420F
Maximum Ratings
Data Sheet 8 Revision 1.0, 2011-09-05
2 Maximum Ratings
Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit.
Table 1 Maximum Ratings at TA = 25°C (unless otherwise specified)Parameter Symbol Values Unit Note / Test Condition
Min. Max.Collector emitter voltage VCEO Open base
– 4.5 V TA = 25°C– 4.1 V TA = -55 °C
Collector base voltage VCBO – 15 V Open emitterCollector emitter voltage VCES – 15 V Emitter / base shortenedEmitter base voltage VEBO – 1.5 V Open collectorBase current IB 9 mA –Collector current IC – 60 mA –RF input power PRFin – – dBm –Total power dissipation1)
1) TS is the soldering point temperature. TS measured on the emitter lead at the soldering point of the pcb.
Ptot – 210 mW TS ≤ 100 °CJunction temperature TJ – 150 °C –Storage temperature TStg -55 150 °C –
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BFP420F
Thermal Characteristics
Data Sheet 9 Revision 1.0, 2011-09-05
3 Thermal Characteristics
Figure 1 Total Power Dissipation Ptot = f (Ts)
Table 2 Thermal Resistance Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.Junction - soldering point1)
1) For calculation of RthJA please refer to Application Note Thermal Resistance AN 077RthJS – 240 – K/W –
0 25 50 75 100 125 1500
20
40
60
80
100
120
140
160
180
200
220
240
260
TS [°C]
Pto
t [mW
]
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BFP420F
Electrical Characteristics
4 Electrical Characteristics
4.1 DC Characteristics
4.2 General AC Characteristics
Table 3 DC Characteristics at TA = 25 °C Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.Collector emitter breakdown voltage V(BR)CEO 4.5 5.5 – V IC = 1 mA, IB = 0
Open baseCollector emitter leakage current ICES – – 10 μA VCE = 15 V, VBE = 0
– 1 30 nA VCE = 3 V, VBE = 0Emitter/base shorted
Collector base leakage current ICBO – 1 30 nA VCB = 3 V, IE = 0Open emitter
Emitter base leakage current IEBO – 10 100 nA VEB = 0.5 V, IC = 0Open collector
DC current gain hFE 60 95 130 VCE = 4 V, IC = 5 mAPulse measured
Table 4 General AC Characteristics at TA = 25 °C Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.Transition frequency fT 18 25 – GHz VCE = 3 V, IC = 30 mA
f = 2 GHzCollector base capacitance CCB – 0.15 0.3 pF VCB = 2 V, VBE = 0
f = 1 MHzEmitter grounded
Collector emitter capacitance CCE – 0.46 – pF VCE = 2 V, VBE = 0f = 1 MHzBase grounded
Emitter base capacitance CEB – 0.55 – pF VEB = 0.5 V, VCB = 0f = 1 MHzCollector grounded
Data Sheet 10 Revision 1.0, 2011-09-05
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BFP420F
Electrical Characteristics
4.3 Frequency Dependent AC Characteristics
Measurement setup is a test fixture with Bias T’s in a 50 Ω system, TA = 25 °C
Figure 2 Testing Circuit
Table 5 AC Characteristics, f = 150 MHz Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.Maximum power gain dB ZS = ZSoptG, ZL = ZLoptG
@ low noise operating point Gms – 30 – VCE = 3 V, IC = 4 mA@ recommended trade off oper. point Gms – 34.5 – VCE = 3 V, IC = 15 mA@ max. linearity operating point Gms – 37 – VCE = 4 V, IC = 40 mATransducer gain dB ZS = ZL = 50 Ω@ low noise operating point S21 – 22 – VCE = 3 V, IC = 4 mA@ recommended trade off oper. point S21 – 30 – VCE = 3 V, IC = 15 mA@ max. linearity operating point S21 – 33 – VCE = 4 V, IC = 40 mANoise figure dB ZS = ZSoptN
@ low noise operating point VCE = 3 V, IC = 4 mAMinimum noise figure NFmin – 0.9 –Associated gain Gass – 24 –@ recommended trade off oper. point VCE = 3 V, IC = 15 mAMinimum noise figure NFmin – 1.4 –Associated gain Gass – 29 –Linearity dBm ZS = ZL = 50 Ω@ recommended trade off oper. point VCE = 3 V, IC = 15 mA3rd order intercept point at output OIP3 – 21 –1 dB gain compression point at output OP1dB – 7 –
OUT
IN
Bias-T
Bias-TB
(Pin 1)
E C
E
VCTop View
VB
Data Sheet 11 Revision 1.0, 2011-09-05
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BFP420F
Electrical Characteristics
@ max. linearity operating point VCE = 4 V, IC = 40 mA3rd order intercept point at output OIP3 – 25 –1 dB gain compression point at output OP1dB – 15.5 –
Table 6 AC Characteristics, f = 450 MHz Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.Maximum power gain dB ZS = ZSoptG, ZL = ZLoptG
@ low noise operating point Gms – 25 – VCE = 3 V, IC = 4 mA@ recommended trade off oper. point Gms – 29 – VCE = 3 V, IC = 15 mA@ max. linearity operating point Gms – 31 – VCE = 4 V, IC = 40 mATransducer gain dB ZS = ZL = 50 Ω@ low noise operating point S21 – 21 – VCE = 3 V, IC = 4 mA@ recommended trade off oper. point S21 – 27 – VCE = 3 V, IC = 15 mA@ max. linearity operating point S21 – 28.5 – VCE = 4 V, IC = 40 mANoise figure dB ZS = ZSoptN
@ low noise operating point VCE = 3 V, IC = 4 mAMinimum noise figure NFmin – 0.9 –Associated gain Gass – 22.5 –@ recommended trade off oper. point VCE = 3 V, IC = 15 mAMinimum noise figure NFmin – 1.4 –Associated gain Gass – 27 –Linearity dBm ZS = ZL = 50 Ω@ recommended trade off oper. point VCE = 3 V, IC = 15 mA3rd order intercept point at output OIP3 – 21.5 –1 dB gain compression point at output OP1dB – 8 –@ max. linearity operating point VCE = 4 V, IC = 40 mA3rd order intercept point at output OIP3 – 26.5 –1 dB gain compression point at output OP1dB – 16.5 –
Table 7 AC Characteristics, f = 900 MHz Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.Maximum power gain dB ZS = ZSoptG, ZL = ZLoptG
@ low noise operating point Gms – 22 – VCE = 3 V, IC = 4 mA@ recommended trade off oper. point Gms – 25 – VCE = 3 V, IC = 15 mA@ max. linearity operating point Gms – 26.5 – VCE = 4 V, IC = 40 mA
Table 5 AC Characteristics, f = 150 MHz (cont’d)
Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max.
Data Sheet 12 Revision 1.0, 2011-09-05
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BFP420F
Electrical Characteristics
Transducer gain dB ZS = ZL = 50 Ω@ low noise operating point S21 – 19 – VCE = 3 V, IC = 4 mA@ recommended trade off oper. point S21 – 23 – VCE = 3 V, IC = 15 mA@ max. linearity operating point S21 – 24 – VCE = 4 V, IC = 40 mANoise figure dB ZS = ZSoptN
@ low noise operating point VCE = 3 V, IC = 4 mAMinimum noise figure NFmin – 0.95 –Associated gain Gass – 20 –@ recommended trade off oper. point VCE = 3 V, IC = 15 mAMinimum noise figure NFmin – 1.4 –Associated gain Gass – 23 –Linearity dBm ZS = ZL = 50 Ω@ recommended trade off oper. point VCE = 3 V, IC = 15 mA3rd order intercept point at output OIP3 – 23.5 –1 dB gain compression point at output OP1dB – 8 –@ max. linearity operating point VCE = 4 V, IC = 40 mA3rd order intercept point at output OIP3 – 27.5 –1 dB gain compression point at output OP1dB – 17 –
Table 8 AC Characteristics, f = 1500 MHz Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.Maximum power gain dB ZS = ZSoptG, ZL = ZLoptG
@ low noise operating point Gms – 19 – VCE = 3 V, IC = 4 mA@ recommended trade off oper. point Gms – 22 – VCE = 3 V, IC = 15 mA@ max. linearity operating point Gma – 22 – VCE = 4 V, IC = 40 mATransducer gain dB ZS = ZL = 50 Ω@ low noise operating point S21 – 16 – VCE = 3 V, IC = 4 mA@ recommended trade off oper. point S21 – 19 – VCE = 3 V, IC = 15 mA@ max. linearity operating point S21 – 19.5 – VCE = 4 V, IC = 40 mANoise figure dB ZS = ZSoptN
@ low noise operating point VCE = 3 V, IC = 4 mAMinimum noise figure NFmin – 1 –Associated gain Gass – 16.5 –@ recommended trade off oper. point VCE = 3 V, IC = 15 mAMinimum noise figure NFmin – 1.5 –Associated gain Gass – 19 –
Table 7 AC Characteristics, f = 900 MHz (cont’d)
Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max.
Data Sheet 13 Revision 1.0, 2011-09-05
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BFP420F
Electrical Characteristics
Linearity dBm ZS = ZL = 50 Ω@ recommended trade off oper. point VCE = 3 V, IC = 15 mA3rd order intercept point at output OIP3 – 22.5 –1 dB gain compression point at output OP1dB – 7 –@ max. linearity operating point VCE = 4 V, IC = 40 mA3rd order intercept point at output OIP3 – 27.5 –1 dB gain compression point at output OP1dB – 16 –
Table 9 AC Characteristics, f = 1900 MHz Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.Maximum power gain dB ZS = ZSoptG, ZL = ZLoptG
@ low noise operating point Gms – 18 – VCE = 3 V, IC = 4 mA@ recommended trade off oper. point Gma – 19.5 – VCE = 3 V, IC = 15 mA@ max. linearity operating point Gma – 19 – VCE = 4 V, IC = 40 mATransducer gain dB ZS = ZL = 50 Ω@ low noise operating point S21 – 14 – VCE = 3 V, IC = 4 mA@ recommended trade off oper. point S21 – 16.5 – VCE = 3 V, IC = 15 mA@ max. linearity operating point S21 – 17 – VCE = 4 V, IC = 40 mANoise figure dB ZS = ZSoptN
@ low noise operating point VCE = 3 V, IC = 4 mAMinimum noise figure NFmin – 1.1 –Associated gain Gass – 15 –@ recommended trade off oper. point VCE = 3 V, IC = 15 mAMinimum noise figure NFmin – 1.5 –Associated gain Gass – 17 –Linearity dBm ZS = ZL = 50 Ω@ recommended trade off oper. point VCE = 3 V, IC = 15 mA3rd order intercept point at output OIP3 – 24 –1 dB gain compression point at output OP1dB – 9 –@ max. linearity operating point VCE = 4 V, IC = 40 mA3rd order intercept point at output OIP3 – 28 –1 dB gain compression point at output OP1dB – 17 –
Table 8 AC Characteristics, f = 1500 MHz (cont’d)
Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max.
Data Sheet 14 Revision 1.0, 2011-09-05
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BFP420F
Electrical Characteristics
Table 10 AC Characteristics, f = 2400 MHz Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.Maximum power gain dB ZS = ZSoptG, ZL = ZLoptG
@ low noise operating point Gms – 16.5 – VCE = 3 V, IC = 4 mA@ recommended trade off oper. point Gma – 16.5 – VCE = 3 V, IC = 15 mA@ max. linearity operating point Gma – 16.5 – VCE = 4 V, IC = 40 mATransducer gain dB ZS = ZL = 50 Ω@ low noise operating point S21 – 12 – VCE = 3 V, IC = 4 mA@ recommended trade off oper. point S21 – 14.5 – VCE = 3 V, IC = 15 mA@ max. linearity operating point S21 – 15 – VCE = 4 V, IC = 40 mANoise figure dB ZS = ZSoptN
@ low noise operating point VCE = 3 V, IC = 4 mAMinimum noise figure NFmin – 1.2 –Associated gain Gass – 12.5 –@ recommended trade off oper. point VCE = 3 V, IC = 15 mAMinimum noise figure NFmin – 1.6 –Associated gain Gass – 15 –Linearity dBm ZS = ZL = 50 Ω@ recommended trade off oper. point VCE = 3 V, IC = 15 mA3rd order intercept point at output OIP3 – 24.5 –1 dB gain compression point at output OP1dB – 8.5 –@ max. linearity operating point VCE = 4 V, IC = 40 mA3rd order intercept point at output OIP3 – 28 –1 dB gain compression point at output OP1dB – 16.5 –
Table 11 AC Characteristics, f = 3500 MHz Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.Maximum power gain dB ZS = ZSoptG, ZL = ZLoptG
@ low noise operating point Gma – 11.5 – VCE = 3 V, IC = 4 mA@ recommended trade off oper. point Gma – 12.5 – VCE = 3 V, IC = 15 mA@ max. linearity operating point Gma – 13 – VCE = 4 V, IC = 40 mATransducer gain dB ZS = ZL = 50 Ω@ low noise operating point S21 – 9 – VCE = 3 V, IC = 4 mA@ recommended trade off oper. point S21 – 11 – VCE = 3 V, IC = 15 mA@ max. linearity operating point S21 – 11.5 – VCE = 4 V, IC = 40 mANoise figure dB ZS = ZSoptN
@ low noise operating point VCE = 3 V, IC = 4 mAMinimum noise figure NFmin – 1.6 –
Data Sheet 15 Revision 1.0, 2011-09-05
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BFP420F
Electrical Characteristics
Associated gain Gass – 10 –@ recommended trade off oper. point VCE = 3 V, IC = 15 mAMinimum noise figure NFmin – 1.8 –Associated gain Gass – 11.5 –Linearity dBm ZS = ZL = 50 Ω@ recommended trade off oper. point VCE = 3 V, IC = 15 mA3rd order intercept point at output OIP3 – 22 –1 dB gain compression point at output OP1dB – 8 –@ max. linearity operating point VCE = 4 V, IC = 40 mA3rd order intercept point at output OIP3 – 26 –1 dB gain compression point at output OP1dB – 17 –
Table 12 AC Characteristics, f = 5500 MHz Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.Maximum power gain dB ZS = ZSoptG, ZL = ZLoptG
@ low noise operating point Gma – 7.5 – VCE = 3 V, IC = 4 mA@ recommended trade off oper. point Gma – 8.5 – VCE = 3 V, IC = 15 mA@ max. linearity operating point Gma – 9 – VCE = 4 V, IC = 40 mATransducer gain dB ZS = ZL = 50 Ω@ low noise operating point S21 – 5.5 – VCE = 3 V, IC = 4 mA@ recommended trade off oper. point S21 – 7 – VCE = 3 V, IC = 15 mA@ max. linearity operating point S21 – 8 – VCE = 4 V, IC = 40 mANoise figure dB ZS = ZSoptN
@ low noise operating point VCE = 3 V, IC = 4 mAMinimum noise figure NFmin – 2.2 –Associated gain Gass – 5 –@ recommended trade off oper. point VCE = 3 V, IC = 15 mAMinimum noise figure NFmin – 2.3 –Associated gain Gass – 8 –Linearity dBm ZS = ZL = 50 Ω@ recommended trade off oper. point VCE = 3 V, IC = 15 mA3rd order intercept point at output OIP3 – 22 –1 dB gain compression point at output OP1dB – 8.5 –@ max. linearity operating point VCE = 4 V, IC = 40 mA3rd order intercept point at output OIP3 – 26 –1 dB gain compression point at output OP1dB – 17 –
Table 11 AC Characteristics, f = 3500 MHz (cont’d)
Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max.
Data Sheet 16 Revision 1.0, 2011-09-05
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BFP420F
Electrical Characteristics
Note:
1. Gms = IS21 / S12I for k < 1; Gma = IS21 / S12I(k-(k2-1)1/2) for k > 12. In order to get the NFmin values stated in this chapter the test fixture losses have been subtracted from all
measured results.3. OIP3 value depends on termination of all intermodulation frequency components. Termination used for this
measurement is 50 Ω from 0.2 MHz to 12 GHz.
Data Sheet 17 Revision 1.0, 2011-09-05
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BFP420F
Electrical Characteristics
4.4 Characteristic DC Diagrams
Figure 3 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter
Figure 4 DC Current Gain hFE = f (IC), VCE = 3 V
0 1 2 3 4 5 60
5
10
15
20
25
30
35
40
45
50
55
60
65
IB = 25µA
IB = 75µA
IB = 125µA
IB = 175µA
IB = 225µA
IB = 275µA
IB = 325µA
IB = 375µA
IB = 425µA
IB = 475µA
IB = 525µA
IB = 575µA
IB = 625µA
IB = 675µA
IB = 725µA
VCE
[V]
I C [
mA
]
10−1
100
101
102
101
102
IC
[mA]
h FE
Data Sheet 18 Revision 1.0, 2011-09-05
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BFP420F
Electrical Characteristics
Figure 5 Collector Current vs. Base Emitter Voltage IC = f (VBE), VCE = 3 V
Figure 6 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 3 V
0.5 0.6 0.7 0.8 0.9 110
−5
10−4
10−3
10−2
10−1
100
101
102
VBE
[V]
I C [
mA
]
0.5 0.6 0.7 0.8 0.9 110
−7
10−6
10−5
10−4
10−3
10−2
10−1
100
VBE
[V]
I B [
mA
]
Data Sheet 19 Revision 1.0, 2011-09-05
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BFP420F
Electrical Characteristics
Figure 7 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 3 V
Figure 8 Collector Emitter Breakdown Voltage VCER = f (RBE), IC = 1 mA
0.3 0.5 0.7 0.9 1.1 1.3 1.510
−11
10−10
10−9
10−8
10−7
10−6
VEB
[V]
I B [
A]
104
105
106
107
5
5.5
6
6.5
7
7.5
8
RBE
[Ω]
VC
ER
[V
]
RBE
B
C
E
Data Sheet 20 Revision 1.0, 2011-09-05
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BFP420F
Electrical Characteristics
4.5 Characteristic AC Diagrams
Figure 9 Transition Frequency fT = f (IC), f = 2 GHz, VCE = Parameter
Figure 10 3rd Order Intercept Point OIP3 = f (IC), ZS = ZL= 50 Ω, VCE, f = Parameters
0 10 20 30 40 50 60 700
2
4
6
8
10
12
14
16
18
20
22
24
26
28
3.00V
2.00V
1.00V
IC
[mA]
f T [GH
z]
4.00V
0 10 20 30 40 50 60−4−2
02468
1012141618202224262830
IC
[mA]
OIP
3 [dB
m]
3V, 900MHz4V, 900MHz3V, 1900MHz4V, 1900MHz
Data Sheet 21 Revision 1.0, 2011-09-05
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BFP420F
Electrical Characteristics
Figure 11 3rd Order Intercept Point at output OIP3 [dBm] = f (IC, VCE), ZS = ZL= 50 Ω, f = 1900 MHz
Figure 12 Compression Point at output OP1dB [dBm] = f (IC, VCE), ZS = ZL= 50 Ω, f = 1900 MHz
1213
1414
15
15
16
16
17
17
17
18
18
1819
19
19
19
2020
20
20
20
2121
21
21
21
2222
22
22
22
2323
23
23
23
2424
24
24
24
2525
25
25
25
26
2626
26
27
27
27
27
28
28
VCE
[V]
I C [
mA
]
1 1.5 2 2.5 3 3.5 45
10
15
20
25
30
35
40
45
50
55
60
0000 1111 2222
3
333
4
4
444
5
5
555
6
6
666 777
7
7
7
888
8
8
999
9
9
101010
10
10
111111
11
1212
12
12
1313
13
13
1414
14
1515
15
16
16
17
VCE
[V]
I C [
mA
]
1 1.5 2 2.5 3 3.5 45
10
15
20
25
30
35
40
45
50
55
60
Data Sheet 22 Revision 1.0, 2011-09-05
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BFP420F
Electrical Characteristics
Figure 13 Collector Base Capacitance CCB = f (VCB), f = 1 MHz
Figure 14 Gain Gma, Gms, IS21I² = f (f), VCE = 3 V, IC = 15 mA
0 0.5 1 1.5 2 2.5 3 3.5 40
0.06
0.12
0.18
0.24
0.3
VCB
[V]
CC
B [
pF]
0 1 2 3 4 5 60
5
10
15
20
25
30
35
40
f [GHz]
G [d
B]
Gms
Gma
|S21
|2
Data Sheet 23 Revision 1.0, 2011-09-05
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BFP420F
Electrical Characteristics
Figure 15 Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz
Figure 16 Maximum Power Gain Gmax = f (VCE), IC = 15 mA, f = Parameter in GHz
0 10 20 30 40 50 60 70 803
6
9
12
15
18
21
24
27
30
33
36
39
5.50GHz
3.50GHz
2.40GHz
1.90GHz
1.50GHz
0.90GHz
0.45GHz
0.15GHz
IC
[mA]
G [d
B]
0 1 2 3 4 5 63
6
9
12
15
18
21
24
27
30
33
36
39
5.50GHz
3.50GHz
2.40GHz
1.90GHz
1.50GHz
0.90GHz
0.45GHz
0.15GHz
VCE
[V]
G [d
B]
Data Sheet 24 Revision 1.0, 2011-09-05
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BFP420F
Electrical Characteristics
Figure 17 Input Matching S11 = f ( f ), VCE = 3 V, IC = 4 / 15 / 45 mA
Figure 18 Source Impedance for Minimum Noise Figure Zopt = f ( f ) , VCE = 3 V, IC = 4 / 15 mA
10.1 0.2 0.3 0.4 0.5 21.5 3 4 50
1
−1
1.5
−1.5
2
−2
3
−3
4
−4
5
−5
10
−10
0.5
−0.5
0.1
−0.1
0.2
−0.2
0.3
−0.3
0.4
−0.4
0.03 to 6 GHz
step: 1 GHz
4 mA
15 mA
40 mA
10.1 0.2 0.3 0.4 0.5 21.5 3 4 50
1
−1
1.5
−1.5
2
−2
3
−3
4
−4
5
−5
10
−10
0.5
−0.5
0.1
−0.1
0.2
−0.2
0.3
−0.3
0.4
−0.4
0.45GHz
0.9GHz
1.9GHz
2.4GHz
3.5GHz
Ic = 4.0mA
Ic = 15mA
Data Sheet 25 Revision 1.0, 2011-09-05
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BFP420F
Electrical Characteristics
Figure 19 Output Matching S22 = f ( f ), VCE = 3 V, IC = 4 / 15 / 45 mA
Figure 20 Noise Figure NFmin = f ( f ), VCE = 3 V, IC = 4 / 15 mA, ZS = Zopt
10.1 0.2 0.3 0.4 0.5 21.5 3 4 50
1
−1
1.5
−1.5
2
−2
3
−3
4
−4
5
−5
10
−10
0.5
−0.5
0.1
−0.1
0.2
−0.2
0.3
−0.3
0.4
−0.4
0.03 to 6 GHz
step: 1 GHz
4 mA
15 mA
40 mA
0 0.5 1 1.5 2 2.5 3 3.5 40
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
f [GHz]
NFm
in [d
B]
IC
= 4mA
IC
= 16mA
Data Sheet 26 Revision 1.0, 2011-09-05
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BFP420F
Electrical Characteristics
Figure 21 Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz
Figure 22 Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω, f = Parameter in GHz
Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. TA = 25 °C.
0 5 10 15 20 25 30 350.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
Ic [mA]
NFm
in [d
B]
f = 0.45GHz
f = 0.9GHz
f = 1.9GHz
f = 2.4GHz
f = 3.5GHz
0 5 10 15 20 25 30 350.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
3.2
3.4
Ic [mA]
NF5
0 [d
B]
f = 0.45GHz
f = 0.9GHz
f = 1.9GHz
f = 2.4GHz
f = 3.5GHz
Data Sheet 27 Revision 1.0, 2011-09-05
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BFP420F
Simulation Data
Data Sheet 28 Revision 1.0, 2011-09-05
5 Simulation DataFor the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please consult our website and download the latest versions before actually starting your design.You find the BFP420F SPICE GP model on the official homepage of Infineon RF transistors in MWO- and ADS-format, which you can import into these circuit simulation tools very quickly and conveniently. The model already contains the package parasitics and is ready to use for DC- and high frequency simulations. The terminals of the model circuit correspond to the pin configuration of the device.The model parameters have been extracted and verified up to 10 GHz using typical devices. The BFP420F SPICE GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE GP model itself. Besides the DC characteristics all S-parameters in magnitude and phase, as well as noise figure (including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have been extracted.
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BFP420F
Package Information TSFP-4
Data Sheet 29 Revision 1.0, 2011-09-05
6 Package Information TSFP-4
Figure 23 Package Outline
Figure 24 Package Foot Print
Figure 25 Marking Example (Marking BFP420F: AMs)
Figure 26 Tape Dimensions
±0.050.2
±0.051.4
1 2
±0.0
50.
8
1.2
±0.0
5
±0.040.55
±0.0
50.
2
±0.050.15±0.050.2
0.5±0.05
0.5±0.05
4 3
TSFP-4-1, -2-PO V04
0.35
0.45
0.9
0.5 0.5
TSFP-4-1, -2-FP V04
MarkingPin 1
Manufacturer
XYsMarkingPin 1
Manufacturer
XYs
TSFP-4-1, -2-TP V05
4 0.2
1.4
8
Pin 1 1.55 0.7