bc107(1)

BC107,A,B BC108B,C BC109B,C NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BC107, BC108, BC109 series types are small signal NPN silicon transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier applications. MARKING: FULL PART NUMBER MAXIMUM RATINGS: (T A =25°C) SYMBOL BC107 BC108 BC109 UNITS Collector-Base Voltage V CBO 50 30 30 V Collector-Emitter Voltage V CEO 45 25 25 V Emitter-Base Voltage V EBO 6.0 5.0 5.0 V Continuous Collector Current I C 200 mA Power Dissipation P D 600 mW Operating and Storage Junction Temperature T J , T stg -65 to +200 °C Thermal Resistance JC 175 °C/W ELECTRICAL CHARACTERISTICS: (T A =25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS I CBO V CB =45V (BC107) 15 nA I CBO V CB =45V, T A =125°C (BC107) 4.0 μA I CBO V CB =25V (BC108, BC109) 15 nA I CBO V CB =25V, T A =125°C (BC108, BC109) 4.0 μA BV CEO I C =2.0mA (BC107) 45 V BV CEO I C =2.0mA (BC108, BC109) 25 V BV EBO I E =10μA (BC107) 6.0 V BV EBO I E =10μA (BC108, BC109) 5.0 V V CE(SAT) I C =10mA, I B =0.5mA 0.25 V V CE(SAT) I C =100mA, I B =5.0mA 0.6 V V BE(SAT) I C =10mA, I B =0.5mA 0.7 0.83 V V BE(SAT) I C =100mA, I B =5.0mA 1.0 1.05 V V BE(ON) V CE =5.0V, I C =2.0mA 0.55 0.7 V V BE(ON) V CE =5.0V, I C =10mA 0.77 V h FE V CE =5.0V, I C =10μA (BC107B, BC108B, BC109B) 40 h FE V CE =5.0V, I C =10μA (BC108C, BC109C) 100 h FE V CE =5.0V, I C =2.0mA (BC107) 110 450 h FE V CE =5.0V, I C =2.0mA (BC107A) 110 220 h FE V CE =5.0V, I C =2.0mA (BC107B, BC108B, BC109B) 200 450 h FE V CE =5.0V, I C =2.0mA (BC108C, BC109C) 420 800 TO-18 CASE R1 (16-August 2012) www.centralsemi.com

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BC107,A,BBC108B,CBC109B,CNPN SILICON TRANSISTORDESCRIPTION:The CENTRAL SEMICONDUCTOR BC107, BC108, BC109 series types are small signal NPN silicon transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier applications.MARKING: FULL PART NUMBERMAXIMUM RATINGS: (TA=25C)SYMBOLBC107BC108BC109UNITSCollector-Base VoltageVCBO503030VCollector-Emitter VoltageVCEO452525VEmitter-Base VoltageVEBO6.05.05.0VContinuous Collector CurrentIC200mAPower DissipationPD600mWOperating and Storage Junction TemperatureTJ, Tstg-65 to +200CThermal ResistanceJC175C/WELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted)SYMBOLTEST CONDITIONSMINTYPMAXUNITSICBOVCB=45V (BC107)15nAICBOVCB=45V, TA=125C (BC107)4.0AICBOVCB=25V (BC108, BC109)15nAICBOVCB=25V, TA=125C (BC108, BC109)4.0ABVCEOIC=2.0mA (BC107)45VBVCEOIC=2.0mA (BC108, BC109)25VBVEBOIE=10A (BC107)6.0VBVEBOIE=10A (BC108, BC109)5.0VVCE(SAT)IC=10mA, IB=0.5mA0.25VVCE(SAT)IC=100mA, IB=5.0mA0.6VVBE(SAT)IC=10mA, IB=0.5mA0.70.83VVBE(SAT)IC=100mA, IB=5.0mA1.01.05VVBE(ON)VCE=5.0V, IC=2.0mA0.550.7VVBE(ON)VCE=5.0V, IC=10mA0.77VhFEVCE=5.0V, IC=10A (BC107B, BC108B, BC109B)40 hFEVCE=5.0V, IC=10A (BC108C, BC109C)100 hFEVCE=5.0V, IC=2.0mA (BC107)110450 hFEVCE=5.0V, IC=2.0mA (BC107A)110220 hFEVCE=5.0V, IC=2.0mA (BC107B, BC108B, BC109B)200450 hFEVCE=5.0V, IC=2.0mA (BC108C, BC109C)420800 TO-18 CASER1 (16-August 2012)www. cent ral semi . comBC107,A,BBC108B,CBC109B,CNPN SILICON TRANSISTORLEAD CODE:1) Emitter2) Base3) CollectorMARKING:FULL PART NUMBERTO-18 CASE - MECHANICAL OUTLINEELECTRICAL CHARACTERISTICS - Continued: (TA=25C unless otherwise noted)SYMBOLTEST CONDITIONSMINTYPMAXUNITShfeVCE=5.0V, IC=2.0mA, f=1.0kHz (BC107)125500 hfeVCE=5.0V, IC=2.0mA, f=1.0kHz (BC107A)125260 hfeVCE=5.0V, IC=2.0mA, f=1.0kHz (BC107B, BC108B, BC109B)240500 hfeVCE=5.0V, IC=2.0mA, f=1.0kHz (BC108C)500 hfeVCE=5.0V, IC=2.0mA, f=1.0kHz (BC109C)450900 fTVCE=5.0V, IC=10mA, f=100MHz150MHzCobVCB=10V, IE=0, f=1.0MHz4.5pFNFVCE=5.0V, IC=0.2mA, Rg=2.0k, B=200Hz, f=1.0kHz (BC107, BC108)10dBNFVCE=5.0V, IC=0.2mA, Rg=2.0k, B=200Hz, f=1.0kHz (BC109)4.0dBwww. cent ral semi . comR1 (16-August 2012)

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BC107/ BC108/ BC109BC107/ BC108/ BC109 Low Power Bipolar Transistors Page 1 30/05/05 V1.0 TO-18 Features: NPN Silicon Planar Epitaxial Transistors. Suitable for applications requiring

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bc107(1)

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Transcript of bc107(1)