Basic Semiconductor Physics - ee.sunysb.eduserge/COURSES/F98-ESE511/L01.pdf · Lect 1 - 1-Basic...
Transcript of Basic Semiconductor Physics - ee.sunysb.eduserge/COURSES/F98-ESE511/L01.pdf · Lect 1 - 1-Basic...
-1-1Lect
PhysicsSemiconductorBasic
Be
Mg
Zn
Cd
Hg
II
B
Al
Ga
In
Tl
III
C
Si
Ge
Sn
Pb
IV
N
P
As
Sb
Bi
V
O
S
Se
Te
Po
VI
4 5 6 7 89.012 10.81 12.01 14.01 16.00
12 13 14 15 1624.30 26.98 28.09 30.97 32.06
30 31 32 33 3465.38 69.72 72.59 74.92 78.96
65.38 69.72 72.59 74.92 78.9648 49 50 51 52
80 81 82 83 84200.6 204.4 207.2 209.0 210.0
beryllium
magnesium
zinc
cadmium
mercury
boron
aluminum
gallium
indium
thallium
carbon
silicon
germanium
tin
lead
nitrogen
phosphorus
arsenic
antimony
bismuth
oxygen
sulfur
selenium
tellurium
polonium
1.1Figure intocombinethatelementsshowingTablePeriodictheofPortion.chemicalitselement,theofnametheofconsistsentryEachsemiconductors.
byindicatedareTabletheofColumnsmass.andnumber,atomicsymbol,numerals.roman
-2-1Lect
SiSi
SiSi As
As
Ga
Ga
Se
Se
Cd
Cd
1.2Figure semiconductorsElementalcrystals.covalentindistributionCharge.areGe)(Si, covalentperfectly atomstwobetweensharedelectronssymmetryby;
Compoundatom.eachonprobabilityequalwithfoundbetoareofdegreesomehavealwayssemiconductors ionicity e.g.,compounds,III-VIn.
tonecessaryisthanchargemoreslightlyretainsatomAsfive-valenttheGaAs,Astheofchargepositivetheforcompensate 5 + onchargethewhilecore,ion
Gathe 3 + lessstilloccurselectronsofSharingcompensated.entirelynotisionCdionsthebetweenfairly 2 + Seand 6 + CdSe.compoundII-VIthein
Forsemiconductors.allforgoodreasonablyispicturebondcovalentThebynetworkbondingtherepresenttoconvenientoftenisitpurposeillustrative
thethatcourseofnotedbeshouldItelectrons).(sharedlinesand(ions)circles4hasindeedatomeachsemiconductorsmostFor3-dimensional.isnetwork
planesametheinnotlocatedarethesebutillustrated,asneighbors,nearestbelow.1.3Fig.seetetrahedron,aofverticestheatbut
-3-1Lect
θ
1.3Figure zincblendeordiamondainatomsofarrangementTetrahedral.anglebondtheanddiagonalscubethealongarebondsThestructure. θ is
cosbygiven −=θ 1/ regularadefinecornerstheinatomsFour.3centralthefromdifferentarefourthesestructurezincblendeaIntetrahedron.
same.theallaretheystructurediamondtheinatom,
-4-1Lect
3s
3p
Si atom3 s p2 2
Hybridized Bonded
Solid
Valenceband
Conductionband
sp3EG
bonding
antibonding
1.4Figure scheme.bondingcovalenttheininvolvedlevelsenergyElectronic.3thebetweenSeparation p 3and s 6aboutisorbitalsatomic eV ofMixing.
equivalent4intoorbitalsthese sp 3 oneofpromotionrequireshybrids s(levelsantibondingtheandbondingthebetweenSeparationelectron. "bare"
5aboutisbandgap) eV thealsoiswhich, "average" thebetweenseparationthesebetweenseparationminimumThestates.bandconductionandvalence
bandgap(thebands E G 1.2aboutisSiin) eV temperature.zeroat
-5-1Lect
1.5Figure Column-IVofcharacteristicstructure,diamondThe.Ge,Si,(diamond),Csemiconductors: α latticeBravaisanotisIttin).(grey-Sn
thealongaxeswithcoordinatesCartesianIncell.unitperatomstwohasandsideofcubeaofside a vectorabydisplacedisatomsecondthe
( /a ,4 /a ,4 /a isbasis)(theitselfunittwo-atomThefirst.thetorelative)4structureThelattice.(fcc)cubicface-centeredaformingperiodically,repeated
aisTheresublattices.fccinterpenetratingtwoasviewedbecan ofcenterinversion atoms.basistwothebetweenlinetheonhalfwaylocatedsymmetry,
allsooperation,inversionthebyinterchangedfullyaresublatticesfcctwoThearestructurediamondtheinatoms equivalentsymmetry doeshowever,This,.
ofsetachoosetowaynoistherebecauselattice,Bravaisadiamondmakenotsingleafromstructureentirethegeneratewouldthatvectorstranslationthree
atom.
-6-1Lect
1.6Figure tosimilarisfigureTheGaAs.e.g.,structure,zincblendeThe.Galliumdifferently.coloredareplanesalternateinatomsthatexcept1.5Fig.
sublatticeidenticalAnlattice.cubiccenteredfaceaformatoms – shiftedbut1cubetheofdiagonalbodythealong / lengthitsofth4 – atomsbyformedis
inversionanhavenotdoesstructurezincblendethediamond,UnlikeAs.ofVolumesymmetry. a 3 cellunitprimitivethetimesfourisshowncubeof
volume v c 8thusiscrystaltheofvolumeunitperatomsofnumberThe. a/ 3.
-7-1Lect
A
A
c
a
B
b
1.7Figure aformatomsCadmiumCdSe.e.g.,structure,wurtziteThe.atomsCdofplanesecondThecell.unitperatomstwowithlatticehexagonal
BTheatoms.Aofplanestwothebetweenmiddletheinexactlylocatedis(B)Atheasatomsofarrangementhexagonal2-dimensionalsamethehasplaneisAtorelativeatomBtheofPositionlaterally.shiftedisbutplane
a 1 /3 + a 2 /3 + a 3 / .2
bydenotedisneighborsAin-planebetweenDistance a A-Averticaltheandbydistance c abyatomscadmiumfromdisplacedareatomsSelenium.
distance b wurtzitegeneralaThusaxis.hexagonaltheofdirectiontheinconstantlatticetheparameters:3bydescribedisstructure a twoand
parametersdimensionless =γ a/c and =µ a/b .
thebycharacterizedaresemiconductorswurtziteMost "ideal" values=γ (8/3)1/2 andlattice)packedclose(hexagonal =µ (3/8)1/2 arebonds(all
blockstetrahedralundistortedwithbuiltwhenobtainsstructureThisequal).arekindoppositeofatomsonlystructure,zincblendetheinLike1.3).(Fig.
bonded.
-8-1Lect
A
A
A A
A
A
A
B B
BC
C
C
1.8Figure ofAtomsaxis.hexagonalthealongviewedstructurewurtziteThe.formedtrianglesequilateralsix)of(outthreeofmiddletheinprojectBtypespeciesatomicsamethetocorrespondBandAboththatNoteA.atomsby
andCd)(e.g. together Seof(Atomslattice.packedclosehexagonalaformtheof3/8byapproximatelypagetheintodisplacedlatticehcpanotherform
distance c planes.)Atwobetween
(planetheintouchtheythatsoAspherestheexpandingImagine "closepacking" cannotwelevel,nexttheonspheressimilarstackingthatclearisIt).
togowewhenHowever,short).tooisBC(distancepositionsCandBbothfillis(aspositionsAthreetheeitherfilltofreeareweagain,levelnextthe
arrangementlatter(thepositionsCthreetheorlattice)hcpforappropriateatomicsecondtheofsublatticesimilaraAddinglattice).fcctocorresponds
thatNotestructure.diamondtheorwurtzitetheeitherobtainwespeciesandwurtzitespheres,ofpackingdenseatocorrespondfccandhcpwhile
loose.veryarediamond
-9-1Lect
1.9Figure IV-VItheofSomestructure.chloride)(sodiumrocksaltThe.ascrystallizePbTe)PbSe,PbS,family:lead-saltthe(mainlysemiconductors
isstructureThisrocksalt. octahedrally (coordinated z = ofions)(orAtoms).6thatwayasuchinlatticecubicsimpleaofsitesalternateoccupySandPb
zincblende,theLikekind.othertheofneighborsnearestsixhasatomeachhasandbasistwo-atomawithcubicface-centeredisstructurerocksaltthe
8 a/ 3 shadedthethatNotevolume.unitperatoms "atoms" inpositionedare1.6Fig.inaswaysamethe – Thearrangement.face-centeredtheexhibiting
shadedtheandwhite "atoms" sublattices.fccinterpenetratingtwoform
-10-1Lect
1.10Figure parallelogramAnylattice.honeycombaofcellsunitPrimitive.latticeothernoprovidedserve,willverticesaspointslatticefourbyformed
betohavenotdocelltheofBoundariesinside.orboundaryitsonfallspointofpairabyreplacedbemaysidesoppositethelines:straightofmade
area.samethehavecellsprimitiveAllcurves.congruent
itsNotecell.primitiveWigner-SeitztherepresentshexagonshadedThetheobserveandlattice)honeycombtheofsymmetry(pointsymmetry
pointcentralthefromdrawnwereLinesconstruction.itsforusedscaffoldinginbutsufficient,wereneighborsnearestonlycasethis(inneighborsitsto
waslineeachandrequired)bemayneighborsofshellsseveralgeneralline.perpendicularawithbisected
-11-1Lect
1.11Figure rhombicalattice,cubicface-centeredtheforcellWigner-Seitz.volumeofdodecahedron v c = a 3 / faces.12andedges24vertices,14hasIt4.
equivalent:allnotareverticesTherhombi.equaltwelvearecelltheofFacesrhombi,fourtocommonarecubebigtheofcentersfacethetouchthatsixthe
andObserverhombi.threetocommonareverticeseightotherthewhilerocksaltandzincblende,diamond,Insymmetry.cellthecontemplate
atoms.twoaccommodatescellprimitivethestructures
Exercise whiteoflatticefccthefromStartgeometrically.cellWigner-SeitzfcctheConstruct:"atoms" cubesmallaDrawcube).theofcentertheatsiteonehasit(conveniently,1.9Fig.in(edge /a ofreplicasMake1.11.Fig.inlinedashedthebyshownasatom,centralthearound2)
replicatheofdiagonalsbodytheUsechessboard).three-dimensionala(likecubesmallthepyramids6identifytocubes – pyramidsThesecube.centraltheoffaceonecoveringeach
theofverticesSixdodecahedron.rhombictheformcubecentralthewithtogethertheeach,edgesfourtobelongpyramids)ofapicesthewithcoincidethat(thosedodecahedron
edges.threeofintersectionsarecorners)cubesmallthewith(coincidingverticeseightother
-12-1Lect
W
kx
kz
ky
L
K
UΛ
Σ
∆
Γ
Q
Z
X
W
U
X
1.12Figure alattice,cubiccenteredfacetheofzoneBrillouinfirstThe." octahedrontruncated " (24volumeof π a/ )3 alongsquaressixfaces:14hasIt.the <100> thealonghexagonsregulareightanddirections <111> directions.
thatNoteprimes).the(withoutconventionallylabeledarepointsSymmetryUandKpoints ′ are identical aresoandvector)latticereciprocalaby(different
WandWpoints ′ – XandXnotbut ′ stateselectronicofnumberThe.8iszoneBrillouintheinspin)(including a/ 3 volume.unitper
-13-1Lect
kx
ky
ΓU
R
KΛ Σ∆
kz
H
M
P
L
K
A
T
A
H
M
1.13Figure theshowinglattice,hexagonalaofzoneBrillouinfirstThe.00.dsvolumeofprismhexagonalaisItaxes.symmetryandpointssymmetry
√ (2π)3 v/ c where, v c = a 2 /c prismsimilaraofvolumetheis230byrotatedareprismstwoThesecell.Wigner-Seitzthetocorresponding ˚
spin)(includingstateselectronicofnumberTheanother.onetorespectwith00.ds √ 4iszoneBrillouinthein /(a 2c volume.unitper)
-14-1Lect
E ( )k1
E ( )k2
E ( )k3
E ( )k4
Pseudo-momentum
Ene
rgy
1.14Figure respectwitharrangedbemaybandsdifferenthowofIllustration.(likebandstwoofOverlapanother.oneto E 2 and E 3 theirimplynotdoes)
inpointsofpairsbetweenenergiesofCoincidencestouching.orintersectionBandsdegeneracy.accidentalofexampleanisbandsthese E 1 and E 2 touch
gapEnergydegeneracy.thisofcauselikelytheissymmetrywhosepoint,aatbandsseparates E 3 and E 4.
-15-1Lect
k 1 k 2
F1 F2
q̂
1.15Figure tonormalplanetheinzoneBrillouinaofcross-sectionSchematic.FFacesline).dashedtheby(shownplanesymmetrycrystala 1 Fand 2 are
directionatoperpendicularandplanesymmetrythetoparallel q̂ Opposite.F(symbolically,identicalarezoneBrillouintheoffaces 1 = F2 ≡ Therefore,).F
pointsrelatedsymmetry k1 and k2 Formomentum.crystalsametherepresentbandenergyevery En (k ofareaentiretheonvanishesderivativenormalits),
F.polygonthe
-16-1Lect
ΓΛ
L∆
X
ELEXEΓ
Esohh
lh
so
1.16Figure cubicofstructurebandtheinpointsextremalImportant.forappropriateisscale)tonot(drawnpictureschematicThesemiconductors.
indicatedthetemperatureroomatGaAsForsemiconductor.III-Vdirect-gapaare:energies
E Γ = 1.42 eV, E L = 1.71 eV, E X = 1.90 eV , E so = 0.34 eV .
theinispointbandconductionlowestthesiliconIn ∆ theof85%direction,are:K300atsiliconforenergiesindicatedThepoint.Xtoway
E Γ = 4.08 eV, E L = 1.87 eV, E ∆ = 1.13 eV , E so = 0.04 eV .
thebutLatispointbandconductionlowesttheGeIn Γ away:farnotispointE Γ = 0.89 eV, E L = 0.76 eV, E ∆ = 0.96 eV , E so = 0.29 eV .
book.theofendtheatTablesinfoundbecandatastructurebandAdditional
-17-1Lect
1.17Figure bandconductiontheofvicinitytheinenergyconstantofSurface.alongextendedrevolution,ofellipsoidssixrepresentssiliconinedge <100>
(heavydirectionlongitudinaltheinleastiscurvaturebandThedirections.masseffectiveThemass)(lightdirectiontransversetheinhighestandmass)
ratio ml m/ t ∼∼ .5
-18-1Lect
1.18Figure bandconductiontheofvicinitytheinenergyconstantofSurface.alongextendedrevolution,ofellipsoidsfourrepresentsgermaniuminedge
<111> large,veryisratiomasseffectiveThedirections. ml m/ t = thatso,20sausage.alikelooksreallyellipsoideach
forcellprimitiveachosetohavewouldweellipsoidfullaexhibittoorderIneachpicture,zoneBrillouintheIninternal.bewouldpointLsomewhich
thetoshiftedishalfequivalenttheandboundarythebytwoincutisellipsoidvector.latticereciprocalabyfaceopposite
-19-1Lect
kx
ky
1.19Figure theinsurfaceconstant-energyaofplane(001)theonProjection.diamond-structureinedgebandvalencedegeneratethree-foldtheofvicinity
warpedareenergyconstantofsurfacesThree-dimensionalsemiconductors.exaggerated.muchisfiguretheinwarpingThespheres.
-20-1Lect
EG
Eso hh
lh
so
s1/2s
p3/2p
p1/2
(1)
(3)
(2)
(4)
(2)
(a) (b)
1.20Figure cubicinzoneBrillouintheofcentertheatstatesofGenesis.spinelectronNeglectingsemiconductors. (a) formedistopbandvalencethe,
bondingfourtheofcombinationslinearthreeby sp 3 1.4).Fig.(cf.hybridspredominantlyareThese p combinationindependentlinearly4thTheorbitals.
(predominantly s shownnotisandbandvalencetheofbottomtheatis-type)banddirect(inbandconductiontheofbottomThefigure.thein
predominantlyissemiconductors) s hybridsantibondingotherthewhile-type,(p inNumbersband.conductiontheofrangeuppertheinare-type)
atdegeneraciestheindicateparentheses k = weIf0. "include" (butspinthedouble.degeneraciestheinteraction),spin-orbitthenot
interactionspin-orbittheofInclusion (b) twothesplits-off p-statesmomentumangulartotalthetocorresponding jm > =
21__ ±
21__ > The.
statesfourremaining 23__ m > lightbands,degeneratedoublytwotorisegive
(holes 23__ ±
21__ > (holesheavyand)
23__ ±
23__ > isbandvalencetheoftopThe).
31__ E so bandsplit-offtheoftop(andabove
32__ E so unperturbedthebelow)
coupling.spin-orbitofabsencetheinedgebandvalence
-21-1Lect
EG
Eso s1/2
p3/2
p1/2
(4)
(2)
(2)
m = 1/2 +_
m = 3/2 +_
1.21Figure Intin).(greysemiconductorsgaplessindiagrambandSchematic.changingbyobtainedformallyisstructurebandgaplessthemodel,Kanethe
ofsignthe E G The(1.78).Eq.cf., s 1/2 energyinlowerbecomesthenbandthethan p 3/2 theinbranchlight-holeofcurvaturetheandband p 3/2 isband
isbandgapTheelectrons).intotransformedareholes(lightreversedthedegeneratemakesthatsymmetrysametheofvirtueinzeroidentically
Thissilicon.andgermaniuminbranchesheavy-holetheandlight-holetoleadswhichfield,magneticaofapplicationthebybrokenbecansymmetryabyaccomplishedbecaneffectsimilargap;forbiddenaofemergencethe
strain.uniaxial
-22-1Lect
E
EG
k
e
lh
1.22Figure andconductiontheinrelationenergy-quasimomentumThe.linesthinrelation,exactthe(schematically)indicatelinesFatbands.light-hole
thegiveslinedashedtheofSlopemodel.bandtwothebygivenrelationthevelocitymaximum v max tocorrespondswhichelectrons,bandof c thein
approximatelyismodeltwo-bandthethatevidentisItanalogy.relativisticcurve.realtheonpointinflectionthetoupvalid
-23-1Lect
(a)
(b)
(c)
1.23Figure functions.waveenvelopeandBlochtheofillustrationSchematic.
(a functionBloch) u (r at) k0 = cell.unitcrystalthewithinrapidlyvaries0
(b functionEnvelope) F (r scale.cellunittheonlittlevaries)
(c functionwaveComplete) ψ (r masseffectivetheinelectronlocalizedaof)approximation.