AV02-1995EN%2C0.pdf

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VMMK-2103, VMMK-2203, VMMK-2303, VMMK-2403, VMMK-2503 Reliability Data Sheet Description This document describes the reliability performance of VMMK-2x03 based on a series of reliability tests conduct- ed. VMMK-2x03 is fabricated using Avago Technolodies’s industry leading E-PHEMT technology associated with chip scale surface mount leadless package with GaAs encapsulation. VMMK-2x03 are intended for 0.5 – 11GHz range of wireless application. VMMK-2203 and VMMK-2403 had been subjected to ex- tensive reliability stress tests to predict the mean time to failure and associated distribution. The reliability perfor- mance of VMMK-2103, VMMK-2303 and VMMK-2503 were leveraged on these two products based on similarity in packaging and wafer fabrication process. Table 1. High Temperature Operational Life Test Results Product Stress Test Condition Total Units Tested Total Device Hours No. of Failed Units VMMK-2203 Tch = 150°C, Typical DC Bias 48 48,000 0 VMMK-2403 Tch = 150°C, Typical DC Bias 48 48,000 0 VMMK-2203 Failure criterion: Id degradation > 20%, NF & Gain degradation > 0.5dB VMMK-2403 Failure criterion: Id degradation > 20%, NF & Gain degradation > 0.5dB, OIP3 degradation > 2dBm Table 2. Reliability prediction using Table 1 results: Channel Temp. (°C) Point Typical Performance MTTF hours 90% Confidence MTTF hours Point Typical Performance FIT 90% Confidence FIT 150 9.600 X 10 4 4.165 X 10 4 10416.7 24010.4 125 4.637 X 10 6 2.012 X 10 6 215.7 497.1 100 3.766 X 10 8 1.634 X 10 8 2.7 6.1 85 7.074 X 10 9 3.069 X 10 9 0.141 0.326 65 5.296 X 10 11 2.298 X 10 11 0.002 0.004 50 1.914 X 10 13 8.304 X 10 12 0.00005 0.00012 Notes: 1. Arrhenius model with constant failure rate assumed. Activation energy Ea= 2.25eV derived from multi-temperature stress testing. 2. The point MTTF (representing an estimate of the mean point MTTF) is the total device hours divided by either the number of failures or unity if there are no failures. 3. 90% confident MTTF and failure rate represent the minimum level of reliability performance that is expected from 90% of all samples. This confidence interval is based on the statistics of the assumed exponential distribution of failures. 4. FIT = failure per 10 9 device hours. 5. Thermal Resistance qch-b: VMMK-2203 = 107°C/W, VMMK-2403 = 161°C/W NOTE: THESE DEVICES ARE ESD SENSITIVE, THE FOLLOWING PRECAUTIONS ARE STRONGLY RECOM- MENDED. ENENSURE THAT AN ESD APPROVED CARRIER IS USED WHEN UNITS ARE TRANSPORTED FROM ONE DESTINATION TO ANOTHER. PERSONAL GROUNDINGS IS TO BE WORN AT ALL TIMES WHEN HAN- DLING THESE DEVICES. THE MANUFACTURER ASSUMES NO RESPONSIBILITIES FOR ESD DAMAGE DUE TO IMPROPER STORAGE AND HANDLING OF THESE DEVICES.

Transcript of AV02-1995EN%2C0.pdf

  • VMMK-2103, VMMK-2203, VMMK-2303, VMMK-2403, VMMK-2503

    Reliability Data Sheet

    DescriptionThis document describes the reliability performance of VMMK-2x03 based on a series of reliability tests conduct-ed. VMMK-2x03 is fabricated using Avago Technolodiess industry leading E-PHEMT technology associated with chip scale surface mount leadless package with GaAs encapsulation. VMMK-2x03 are intended for 0.5 11GHz range of wireless application.

    VMMK-2203 and VMMK-2403 had been subjected to ex-tensive reliability stress tests to predict the mean time to failure and associated distribution. The reliability perfor-mance of VMMK-2103, VMMK-2303 and VMMK-2503 were leveraged on these two products based on similarity in packaging and wafer fabrication process.

    Table 1. High Temperature Operational Life Test Results

    ProductStress TestCondition

    Total UnitsTested

    Total DeviceHours

    No. of FailedUnits

    VMMK-2203 Tch = 150C, Typical DC Bias 48 48,000 0

    VMMK-2403 Tch = 150C, Typical DC Bias 48 48,000 0

    VMMK-2203 Failure criterion: Id degradation > 20%, NF & Gain degradation > 0.5dBVMMK-2403 Failure criterion: Id degradation > 20%, NF & Gain degradation > 0.5dB, OIP3 degradation > 2dBm

    Table 2. Reliability prediction using Table 1 results:

    ChannelTemp. (C)

    Point TypicalPerformanceMTTF hours

    90%ConfidenceMTTF hours

    Point TypicalPerformanceFIT

    90%ConfidenceFIT

    150 9.600 X 104 4.165 X 104 10416.7 24010.4

    125 4.637 X 106 2.012 X 106 215.7 497.1

    100 3.766 X 108 1.634 X 108 2.7 6.1

    85 7.074 X 109 3.069 X 109 0.141 0.326

    65 5.296 X 1011 2.298 X 1011 0.002 0.004

    50 1.914 X 1013 8.304 X 1012 0.00005 0.00012

    Notes:1. Arrhenius model with constant failure rate assumed. Activation energy Ea= 2.25eV derived from multi-temperature stress testing.2. The point MTTF (representing an estimate of the mean point MTTF) is the total device hours divided by either the number of failures or unity if

    there are no failures.3. 90% confident MTTF and failure rate represent the minimum level of reliability performance that is expected from 90% of all samples. This

    confidence interval is based on the statistics of the assumed exponential distribution of failures.4. FIT = failure per 109 device hours. 5. Thermal Resistance qch-b: VMMK-2203 = 107C/W, VMMK-2403 = 161C/W

    Note: These devices are esd sensiTive, The following precauTions are sTrongly recom-mended. enensure ThaT an esd approved carrier is used when uniTs are TransporTed from one desTinaTion To anoTher. personal groundings is To be worn aT all Times when han-dling These devices. The manufacTurer assumes no responsibiliTies for esd damage due To improper sTorage and handling of These devices.

  • 2Table 3. Product Qualification Operational Life Test Results [1]

    Stress Product Conditions Duration Failures/number testedHigh Temperature Operating Life (HTOL)

    VMMK-2203 Vd = 5V, Id 23mA with junction temperature of 150C

    1000hrs 0/48

    VMMK-2403 Vd = 5V, Id 52mA with junction temperature of 150C

    1000hrs 0/48

    Wet High Temperature Operating Life (WHTOL)

    VMMK-2203 85C/85%RH,Vd = 5V, Id = 23mA

    1000hrs 0/48

    VMMK-2403 85C/85%RH,Vd = 5V, Id = 52mA

    1000hrs 0/48

    VMMK-2203 Failure criterion: Id degradation > 20%, NF & Gain degradation > 0.5dBVMMK-2403 Failure criterion: Id degradation > 20%, NF & Gain degradation > 0.5dB, OIP3 degradation > 2dBm

    Table 4. Product Qualification Unbiased Environmental Stress Results [1]

    Stress Product Conditions Duration Failures/number testedTemperature Cycle VMMK-2203 JESD22A-104C, Cond B

    -55 C /+125C, 15mins dwell (Air to Air)

    500 cycles 0/90

    VMMK-2403 500 cycles 0/88

    Low TemperatureStorage Life

    VMMK-2203 JESD22-A119, Cond A -40C

    1000hrs 0/90

    VMMK-2403 1000hrs 0/87

    High TemperatureStorage Life

    VMMK-2203 JESD22-A103C, Cond A125C

    1000hrs 0/90

    VMMK-2403 1000hrs 0/85

    Temperature Humidity Storage Life

    VMMK-2203 85 C/85%RH 1000hrs 0/89

    VMMK-2403 1000hrs 0/88

    VMMK-2203 Failure criterion: Id degradation > 20%, NF & Gain degradation > 0.5dBVMMK-2403 Failure criterion: Id degradation > 20%, NF & Gain degradation > 0.5dB, OIP3 degradation > 2dBmNote [1]: Life parts were sampled from 3 different wafers.

    Table 5. Mechanical Test Results [2]

    Stress Conditions Duration Failures/number testedDrop Test JESD22-B111 60 drops 0/60

    Cycle Bending Test Amplitude = 2mm 50 cycles 0/60

    Vibration JESD22-B103-B20Hz -2kHz @ 20Hz/minFor 3 axis (X, Y & Z)

    4 cycles / axis(4mins/axis/cycle)

    0/102

    Temperature Cycle JESD22A-104C, Cond G-40C/125C, 15mins dwell (Air to Air)

    500 cycles 0/143

    Solder Dip Test JESD22-B102E245C5C, Pb Free Solder

    5secs / dip 0/66

    Failure criterion: resistance change > 200%.Solder Dip failure criterion: solder coverage < 95% on individual solder pads..Note [2]: Daisy chain parts were sampled from 3 different wafers.

  • For product information and a complete list of distributors, please go to our web site: www.avagotech.com

    Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.Data subject to change. Copyright 2005-2009 Avago Technologies. All rights reserved. AV02-1995EN - June 25, 2009

    HBMClass 0 is ESD voltage level < 250V, Class 1A is voltage level between 250V and 500V, Class 1B is voltage level be-tween 500V and 1000V, Class 1C is voltage level between 1000V and 2000V, Class 2 is voltage level between 2000V and 4000V, Class 3A is voltage level between 4000V and 8000V, Class 3B is voltage level > 8000V.

    MMClass A is ESD voltage level 400V.

    ESD SensitivityNote: The device is classified as ESD sensitive. The follow-ing precautions should be taken:

    1. Ensure Faraday cage or conductive shield bag is used when the device is transported from one destination to another.

    2. At SMT assembly station, if the static charge is above the device sensitivity level, place an ionizer near to the device for charge neutralization purpose.

    3. Personal grounding has to be worn at all time when handling the device.

    Moisture Sensitivity Level: Level 2Preconditioning per J-STD-020 Level 2 was performed on all devices prior to reliability testing.

    Table 6. Electrostatic Discharge (ESD) Test ResultsVMMK-2103

    ESD Test Reference: ResultsHuman Body Model JESD22-A114 125V (Class 0)

    Machine Model JESD22-A115 50V (Class A)

    VMMK-2203

    ESD Test Reference: ResultsHuman Body Model JESD22-A114 450V (Class 1A)

    Machine Model JESD22-A115 40V (Class A)

    VMMK-2303

    ESD Test Reference: ResultsHuman Body Model JESD22-A114 300V (Class 1A)

    Machine Model JESD22-A115 40V (Class A)

    VMMK-2403

    ESD Test Reference: ResultsHuman Body Model JESD22-A114 675V (Class 1B)

    Machine Model JESD22-A115 50V (Class A)

    VMMK-2503

    ESD Test Reference: ResultsHuman Body Model JESD22-A114 625V (Class 1B)

    Machine Model JESD22-A115 60V (Class A)

    ESD Failure criterion: Leakage current increase > 10x after exposure to ESD pulse.