AUIRGP4062D AUIRGP4062D-E

G C E Gate Collector Emitter

AUTOMOTIVE GRADE

E

G

n-channel

C

Base Part Number Package Type Standard Pack

Orderable Part Number Form Quantity

AUIRGP4062D TO-247AC Tube 25 AUIRGP4062D AUIRGP4062D-E TO-247AD Tube 25 AUIRGP4062D-E

1 2017-08-25

* Qualification standards can be found at www.infineon.com

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Thermal Resistance Parameter Min. Typ. Max. Units RJC (IGBT) Thermal Resistance Junction-to-Case (each IGBT) TO-247 ––– ––– 0.65

°C/W RJC (Diode) Thermal Resistance Junction-to-Case (each Diode) TO-247 ––– ––– 1.62

RCS Thermal Resistance, Case-to-Sink (flat, greased surface) TO-247 ––– 0.24 –––

RJA Thermal Resistance, Junction-to-Ambient (typical socket mount) TO-247 ––– 40 –––

Features Low VCE (on) Trench IGBT Technology Low Switching Losses 5µs SCSOA Square RBSOA 100% of The Parts Tested for ILM Positive VCE (on) Temperature Coefficient. Ultra Fast Soft Recovery Co-pak Diode Tighter Distribution of Parameters Lead-Free, RoHS Compliant Automotive Qualified *

Benefits High Efficiency in a Wide Range of Applications Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses Rugged Transient Performance for Increased Reliability Excellent Current Sharing in Parallel Operation Low EMI

VCES = 600V

IC = 24A, TC = 100°C

tSC 5µs, TJ(max) = 175°C

VCE(on) typ. = 1.60V

TO-247AD AUIRGP4062D-E

G C

E

C

Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuous Collector Current 48

A

IC @ TC = 100°C Continuous Collector Current 24 ICM Pulse Collector Current VGE =15V 72 ILM Clamped Inductive Load Current VGE =20V 96 IF @ TC = 25°C Diode Continuous Forward Current 48 IF @ TC = 100°C Diode Continuous Forward Current 24 IFSM Maximum Repetitive Forward Current 96 VGE ±20 V

±30 PD @ TC = 25°C Maximum Power Dissipation 250

W PD @ TC = 100°C Maximum Power Dissipation 125 TJ Operating Junction and -55 to +175

°C TSTG Storage Temperature Range Soldering Temperature, for 10 sec. 300 (0.063 in.(1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)

Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage

Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.

TO-247AC AUIRGP4062D

G C

E

C

AUIRGP4062D/AUIRGP4062D-E

2 2017-08-25

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions Ref.

V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 100µA CT6

V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage — 0.30 — V/°C VGE = 0V, IC = 1mA (25°C-175°C)

VCE(on) Collector-to-Emitter Saturation Voltage

— 1.60 1.95

V IC = 24A, VGE = 15V, TJ = 25°C 5,6,7

9,10,11 — 2.03 — IC = 24A, VGE = 15V, TJ = 150°C — 2.04 — IC = 24A, VGE = 15V, TJ = 175°C

VGE(th) Gate Threshold Voltage 4.0 — 6.5 V IC = 700µA 9,10, 11,12 VGE(th)/TJ Threshold Voltage temp. coefficient — -18 — mV/°C VCE = VGE, IC = 1.0mA (25°C-175°C)

gfe Forward Transconductance — 17 — S VCE = 50V, IC = 24A,PW = 80µs

ICES Collector-to-Emitter Leakage Current — 2.0 25 VGE = 0V, VCE = 600V — 775 — VGE = 0V, VCE = 600V,TJ = 175°C

VFM Diode Forward Voltage Drop — 1.80 2.6

V IF = 24A

8 — 1.28 IF = 24A, TJ = 175°C

IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V, VCE = 0V

µA

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions Ref. Fig.

Qg Total Gate Charge (turn-on) — 50 75

nC

IC = 24A 24

Qge Gate-to-Emitter Charge (turn-on) — 13 20 VGE = 15V CT1

Qgc Gate-to-Collector Charge (turn-on) — 21 31 VCC = 400V

Eon Turn-On Switching Loss — 115 201

J

Eoff Turn-Off Switching Loss — 600 700

CT4

Etotal Total Switching Loss — 715 901 IC = 24A, VCC = 400V,

td(on) Turn-On delay time — 41 53 ns

VGE = +15V,TJ = 25°C

tr Rise time — 22 31 RG = 10, L = 200H,LS = 150nH , td(off) Turn-Off delay time — 104 115 Energy losses include tail & diode tf Fall time — 29 41 reverse recovery Eon Turn-On Switching Loss — 420 —

J

13,15, CT4

WF1,WF2 Eoff Turn-Off Switching Loss — 840 —

Etotal Total Switching Loss — 1260 — IC = 24A, VCC = 400V,

td(on) Turn-On delay time — 40 — ns

VGE = +15V,TJ = 175°C 14,16 CT4 WF1 WF2

tr Rise time — 24 — RG = 10, L = 200H, LS = 150nH

td(off) Turn-Off delay time — 125 — Energy losses include tail & diode tf Fall time — 39 — reverse recovery Cies Input Capacitance — 1490 —

pF

VGE = 0V

Coes Output Capacitance — 129 — VCC = 30V 23

Cres Reverse Transfer Capacitance — 45 — f = 1.0Mhz

TJ = 175°C, IC = 96A 4 RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 480V, Vp = 600V CT2

Rg = 10, VGE = +20V to 0V

SCSOA Short Circuit Safe Operating Area 5 — — s

VCC = 400V, Vp = 600V Rg = 10, VGE = +15V to 0V

22,CT3 WF4

Erec Reverse Recovery Energy of the Diode — 624 — J TJ = 175°C 17,18,19,

trr Diode Reverse Recovery Time — 89 — ns VCC = 400V,IF = 24A,VGE = 15V, 20,21

Irr Peak Reverse Recovery Current — 37 — A RG = 10, L = 200H,LS = 150nH WF3

Notes: VCC = 80% (VCES), VGE = 20V, L = 100µH, RG = 10. This is only applied to TO-220AB package. Pulse width limited by max. junction temperature. Refer to AN-1086 for guidelines for measuring V(BR)CES safely.

AUIRGP4062D/AUIRGP4062D-E

3 2017-08-25

0 20 40 60 80 100 120 140 160 180

TC (°C)

0

5

10

15

20

25

30

35

40

45

50I C

(A

)

Fig. 6 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80µs

0 20 40 60 80 100 120 140 160 180

TC (°C)

0

50

100

150

200

250

300

Pto

t (W

)

10 100 1000

VCE (V)

1

10

100

1000

I C (

A)

Fig. 4 - Reverse Bias SOA TJ = 175°C; VGE =20V

Fig. 2 - Power Dissipation vs. Case Temperature

1 10 100 1000 10000

VCE (V)

0.1

1

10

100

1000

I C (

A)

1msec

10µsec

100µsec

Tc = 25°CTj = 175°CSingle Pulse

DC

Fig. 1 - Maximum DC Collector Current vs. Case Temperature

0 1 2 3 4 5 6 7 8

VCE (V)

0

10

20

30

40

50

60

70

80

90

I CE

(A

)

VGE = 18V

VGE = 15VVGE = 12VVGE = 10VVGE = 8.0V

Fig. 5 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 80µs

Fig. 3 - Forward SOA

TC = 25°C, TJ 175°C; VGE =15V

0 1 2 3 4 5 6 7 8

VCE (V)

0

10

20

30

40

50

60

70

80

90

I CE

(A

)

VGE = 18V

VGE = 15VVGE = 12VVGE = 10VVGE = 8.0V

AUIRGP4062D/AUIRGP4062D-E

4 2017-08-25

0 5 10 15

VGE (V)

0

20

40

60

80

100

120

I CE

(A

)

TJ = 25°C

TJ = 175°C

5 10 15 20

VGE (V)

0

2

4

6

8

10

12

14

16

18

20

VC

E (

V) ICE = 12A

ICE = 24A

ICE = 48A

Fig. 7 - Typ. IGBT Output Characteristics TJ = 175°C; tp = 80µs

Fig. 12 - Typ. Transfer Characteristics VCE = 50V; tp = 10µs

5 10 15 20

VGE (V)

0

2

4

6

8

10

12

14

16

18

20

VC

E (

V) ICE = 12A

ICE = 24A

ICE = 48A

Fig. 9 - Typical VCE vs. VGE TJ = -40°C

Fig. 11 - Typical VCE vs. VGE TJ = 175°C

5 10 15 20

VGE (V)

0

2

4

6

8

10

12

14

16

18

20

VC

E (

V) ICE = 12A

ICE = 24A

ICE = 48A

Fig. 8 - Typ. Diode Forward Characteristics tp = 80µs

Fig. 10 - Typical VCE vs. VGE TJ = 25°C

0 1 2 3 4 5 6 7 8

VCE (V)

0

10

20

30

40

50

60

70

80

90

I CE

(A

)VGE = 18V

VGE = 15VVGE = 12VVGE = 10VVGE = 8.0V

0.0 1.0 2.0 3.0

VF (V)

0

20

40

60

80

100

120

I F (

A)

-40°c25°C

175°C

AUIRGP4062D/AUIRGP4062D-E

5 2017-08-25

0 10 20 30 40 50 60

IF (A)

10

15

20

25

30

35

40

I RR

(A

)

RG = 10

RG = 22

RG = 47

RG = 100

Fig. 17 - Typ. Diode IRR vs. IF TJ = 175°C

0 25 50 75 100 125

RG (

5

10

15

20

25

30

35

40

45

I RR

(A

)

0 25 50 75 100 125

Rg ()

0

200

400

600

800

1000

1200

1400

1600

Ene

rgy

(µJ)

EOFF

EON

0 10 20 30 40 50 60

IC (A)

0

200

400

600

800

1000

1200

1400

1600

1800

Ene

rgy

(µJ) EOFF

EON

Fig. 13 - Typ. Energy Loss vs. IC

TJ = 175°C; L = 200µH; VCE = 400V, RG = 10; VGE = 15V

Fig. 15 - Typ. Energy Loss vs. RG TJ = 175°C; L = 200µH; VCE = 400V, ICE = 24A; VGE = 15V Fig. 16 - Typ. Switching Time vs. RG

TJ = 175°C; L = 200µH; VCE = 400V, ICE = 24A; VGE = 15V

Fig. 18 Typ. Diode IRR vs. RG TJ = 175°C

0 25 50 75 100 125

RG ()

10

100

1000

Sw

ichi

ng T

ime

(ns)

tR

tdOFF

tF

tdON

Fig. 14 - Typ. Switching Time vs. IC

TJ = 175°C; L = 200µH; VCE = 400V, RG = 10; VGE = 15V

10 20 30 40 50

IC (A)

1

10

100

1000

Sw

ichi

ng T

ime

(ns)

tR

tdOFF

tF

tdON

AUIRGP4062D/AUIRGP4062D-E

6 2017-08-25

Fig. 19 - Typ. Diode IRR vs. diF/dt VCC = 400V; VGE = 15V; IF = 24A; TJ = 175°C

Fig. 21 - Typ. Diode ERR vs. IF TJ = 175°C

Fig. 22 - VGE vs. Short Circuit Time VCC = 400V; TC = 25°C

Fig. 20 - Typ. Diode QRR vs. diF/dt VCC = 400V; VGE = 15V; TJ = 175°C

0 20 40 60 80 100

VCE (V)

10

100

1000

10000

Cap

acita

nce

(pF

) Cies

Coes

Cres

Fig. 23 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz

0 5 10 15 20 25 30 35 40 45 50 55

Q G, Total Gate Charge (nC)

0

2

4

6

8

10

12

14

16

VG

E, G

ate-

to-E

mitt

er V

olta

ge (

V) VCES = 300V

VCES = 400V

Fig. 24 - Typical Gate Charge vs. VGE ICE = 24A; L = 600μH

0 10 20 30 40 50 60

IF (A)

0

200

400

600

800

1000

Ene

rgy

(µJ)

RG = 10

RG = 22

RG = 47

RG = 100

8 10 12 14 16 18

VGE (V)

4

6

8

10

12

14

16

Tim

e (

µs)

40

80

120

160

200

240

280

Cu

rren

t (A)

0 500 1000 1500

diF /dt (A/µs)

5

10

15

20

25

30

35

40

45

I RR

(A

)

0 500 1000 1500

diF /dt (A/µs)

500

1000

1500

2000

2500

3000

3500

4000

QR

R (

nC)

10

22

100 47

24A

48A

12A

AUIRGP4062D/AUIRGP4062D-E

7 2017-08-25

Fig 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)

Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)

1E-006 1E-005 0.0001 0.001 0.01 0.1

t1 , Rectangular Pulse Duration (sec)

0.001

0.01

0.1

1

The

rmal

Res

pons

e (

Z th

JC )

0.20

0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE( THERMAL RESPONSE )

Notes:1. Duty Factor D = t1/t22. Peak Tj = P dm x Zthjc + Tc

J

J

1

12

2

R1

R1R2

R2

C

C

Ci= iRiCi= iRi

Ri (°C/W) i (sec)

0.2782 0.000311

0.3715 0.006347

1E-006 1E-005 0.0001 0.001 0.01 0.1 1

t1 , Rectangular Pulse Duration (sec)

0.0001

0.001

0.01

0.1

1

10

The

rmal

Res

pons

e (

Z th

JC )

0.200.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE( THERMAL RESPONSE ) Notes:

1. Duty Factor D = t1/t22. Peak Tj = P dm x Zthjc + Tc

J

J

1

12

23

3

R1

R1R2

R2R3

R3

C

C

Ci= iRiCi= iRi

Ri (°C/W) i (sec)

0.693 0.001222

0.621 0.005254

0.307 0.038140

AUIRGP4062D/AUIRGP4062D-E

8 2017-08-25

L

Rg

80 V

DUT VCC

+-

Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit

Fig.C.T.4 - Switching Loss Circuit

Fig.C.T.5 - Resistive Load Circuit

Fig.C.T.3 - S.C. SOA Circuit

Fig.C.T.6 - BVCES Filter Circuit

AUIRGP4062D/AUIRGP4062D-E

9 2017-08-25

Fig. WF1 - Typ. Turn-off Loss Waveform

@ TJ = 175°C using Fig. CT.4 Fig. WF2 - Typ. Turn-on Loss Waveform

@ TJ = 175°C using Fig. CT.4

Fig. WF3 - Typ. Diode Recovery Waveform

@ TJ = 175°C using Fig. CT.4

Fig. WF4 - Typ. S.C. Waveform

@ TJ = 25°C using Fig. CT.3

-100

0

100

200

300

400

500

600

-0.40 0.10 0.60

Time(µs)

VC

E (

V)

-5

0

5

10

15

20

25

30

EOFF Loss

5% VCE

5% ICE

90% ICE

tf

VCE

ICE

-100

0

100

200

300

400

500

600

11.70 11.90 12.10 12.30

Time (µs)

VC

E (

V)

-10

0

10

20

30

40

50

60

EON

ICE

CURREN90% test

10% ICE

5% VCE

trVCE

CURR

-50

-40

-30

-20

-10

0

10

20

30

-0.15 -0.05 0.05 0.15 0.25

time (µS)

IRR

(A)

Peak

IRR

QRR

tRR

10%PeakIRR

-100

0

100

200

300

400

500

600

-5.00 0.00 5.00 10.00

time (µS)

VC

E (V

)

-50

0

50

100

150

200

250

300

I CE

(A)

VCE

ICE

AUIRGP4062D/AUIRGP4062D-E

10 2017-08-25

TO-247AC Package Outline (Dimensions are shown in millimeters (inches))

TO-247AC Part Marking Information

YWWA

XX XX

Date Code Y = Year WW = Work Week A = Automotive, Lead Free

AU4062D

Lot Code

Part Number

IR Logo

TO-247AD package is not recommended for Surface Mount Application.

AUIRGP4062D/AUIRGP4062D-E

11 2017-08-25

TO-247AD Package Outline (Dimensions are shown in millimeters (inches))

TO-247AD Part Marking Information

YWWA

XX XX

Date Code Y = Year WW = Work Week A = Automotive, Lead Free

AU4062D-E

Lot Code

Part Number

IR Logo

TO-247AD package is not recommended for Surface Mount Application.

AUIRGP4062D/AUIRGP4062D-E

12 2017-08-25

† Highest passing voltage.

Qualification Information

Qualification Level

Automotive (per AEC-Q101)

This part number(s) passed Automotive qualification. Infineon’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level.

Moisture Sensitivity Level TO-247AC

N/A TO-247AD

ESD

Machine Model Class M4(+/‐ 400V)†

AEC-Q101-002 Class H2(+/‐ 2000V)†

AEC-Q101-001

Charged Device Model Class C5 (+/‐ 1000V)†

AEC-Q101-005

RoHS Compliant Yes

Human Body Model

Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved.

IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.

Revision History

Date Comments

8/24/2017 Updated datasheet with corporate template Corrected package outline –TO-247AD on page 11 Corrected part marking on pages 10,11