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![Page 1: August 2008 Hi-Rel Operations 2010. August 2008 NATIONAL SEMICONDUCTOR CORPORATION CONFIDENTIAL © 2008 National Semiconductor Corporation. All Rights.](https://reader036.fdocuments.net/reader036/viewer/2022081506/56649de45503460f94adbaea/html5/thumbnails/1.jpg)
August 2008
Hi-Rel Operations2010
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August 2008
NATIONAL SEMICONDUCTOR CORPORATION CONFIDENTIAL© 2008 National Semiconductor Corporation. All Rights Reserved.
National – A Global Company
Taiwan
China
India
Finland
GermanySouth Portland, MEJapan
Malaysia
NetherlandsScotland
Santa Clara, CA
Estonia
Korea
– Santa Clara, Ca USA– Melaka, Malaysia
– South Portland, Maine USA– Greenock, Scotland
Regional Business Divisions
Wafer Fabs
Assembly Plants
– Americas– Europe
– United States (15)– Scotland– The Netherlands– Germany– Italy– India
World Headquarters
– Santa Clara, California, US
Design Centers
– China– Taiwan – Japan– Finland– Estonia– Korea
– Japan– Asia Pacific
Italy
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August 2008
NATIONAL SEMICONDUCTOR CORPORATION CONFIDENTIAL© 2008 National Semiconductor Corporation. All Rights Reserved.
World-Class Manufacturing Our Strategic Asset
• Greenock, Scotland – 6in– Leading-edge analog Bipolar, BiCmos + Dmos,
CMOS processes
• South Portland, Maine – 8in– Advanced CMOS /
BiCMOS (SiGe and SOI) processes – Running advanced analog– US Secure Foundry
• Santa Clara, USA and Melaka, Malaysia – Custom Hermetic Package Design– Test & Assembly
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August 2008
Hi Rel Operations
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August 2008
NATIONAL SEMICONDUCTOR CORPORATION CONFIDENTIAL© 2008 National Semiconductor Corporation. All Rights Reserved.
National Semiconductor – A Rich Space Analog Portfolio
Analog Building BlocksAnalog Building Blocks QMLV Qualified ProductsQMLV Qualified Products
• State of the art radiation tolerant process technology (ELDRS Free)State of the art radiation tolerant process technology (ELDRS Free)
• Industry leading hermetic package technologyIndustry leading hermetic package technology
• Renewed focus on Technology Driven Analog SolutionRenewed focus on Technology Driven Analog Solution• Radiation Testing: SEL, SEU & TID ReportsRadiation Testing: SEL, SEU & TID Reports
30+ Years in the Space Market
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August 2008
NATIONAL SEMICONDUCTOR CORPORATION CONFIDENTIAL© 2008 National Semiconductor Corporation. All Rights Reserved.
Hi-Rel Operations Customer Support and Documentation
• Ceramic Eval Boards• Radiation Reports
TID SEU/SET SEL
• Customer Communications
– Quarterly News Letter
– Customer Portals
– Hi-Rel Web Sitewww.national.com/space
National SemiconductorHi-Rel Operations Radiation Engineering/RHA Programs
2900 Semiconductor DriveSanta Clara, CA 95052
Single Event Effect Report
Micro Power12 b Digital to Analog Converter
DAC121S101WGMLSDAC121S101WGRQV(5962R0722601VZA)
Date: November 17, 2008Rev: B
Principle Investigator and Editor: Kirby Kruckmeyer+1 (408) [email protected]
Written By: Sandeepan DasGupta (Product Engineer Intern)
ADC08D1520CVAL
ADC14155HCVALADC14155LCVAL
ADC10D1000CVAL
LM98640CVAL
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August 2008
NATIONAL SEMICONDUCTOR CORPORATION CONFIDENTIAL© 2008 National Semiconductor Corporation. All Rights Reserved.
Die Products at National
• WAFER– Whole wafers
in vials
• DICED– Waffle Pack– GEL-PAK®
– Tape on Reel– Wafer on
film frame
• Die Products contact– See web site for
information
• Web– www.national.com/die
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August 2008
NATIONAL SEMICONDUCTOR CORPORATION CONFIDENTIAL© 2008 National Semiconductor Corporation. All Rights Reserved.
Hi-Rel Focused Satellite Strategy
ELDRS AOCS Communication Space Imaging Power
Work with our customers to help solve system challenges by developing leading edge Analog Solutions enabling innovative and successful missions.
1. Enhanced Heritage Products2. Aggressively pursue the satellite market with high
performance fully QMLV qualified analog products
Wide Band
Narrow Band
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August 2008
NATIONAL SEMICONDUCTOR CORPORATION CONFIDENTIAL© 2008 National Semiconductor Corporation. All Rights Reserved.
What is ELDRS and Why is It Important?
• Many bipolar linear circuits are used in space systems and many suffer from ELDRS
• System performance may be degraded by ELDRS
• It is hard to identify system malfunctions related to ELDRS
– “Failures” are usually parametric and not functional
– Design margins are often high
– Circuits are often not “suspect” if they passed ground test at HDR
• ELDRS has been demonstrated in space (See papers from NSREC & RADECS)
Enhanced Low Dose Rate Sensitivity: An increase degradation in electrical performance between low dose rate and high dose rate.
High and Low Dose Rate Improvements- legacy Portfolio
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August 2008
NATIONAL SEMICONDUCTOR CORPORATION CONFIDENTIAL© 2008 National Semiconductor Corporation. All Rights Reserved.
• We test them so you don’t have to!
• Every wafer tested and qualified at low dose rates
– per Mil-Std-883 method 1019 condition A&D– Low dose rate of 10 mrad/s (36 rad/hr)– Biased and unbiased
• DSCC unique low dose rate certified part numbers
• ELDRS Free Products LM111 LM117 LM124 LM136-2.5LM139 LM158 LM193 LM7171
LM119 LM2941 LMP2012
• Low Dose Rate Qualified LM117HV
•Products in Qualification LM101 LM137 LM113 LM2940
ELDRS-Free Products!
ELDRS-Free LM139
Also available in die form
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August 2008
NATIONAL SEMICONDUCTOR CORPORATION CONFIDENTIAL© 2008 National Semiconductor Corporation. All Rights Reserved.
• Radiation process developed to improve total dose performance
– LM137 10krad 30krad
– LF411 10krad 50krad
– LM101 10krad 50krad
– LM111 10krad 50krad
– LM136 10krad 100krad
– LM158 10krad 100krad
– LM124 10krad 100krad
– LM139 10krad 100krad
– LM117 10krad 100krad
– LM117HV 3krad 100krad
– LP2953 10krad In Progress
High Dose Rate Improvements - on Legacy Products
Continue to work on radiation performance for existing devices
Before Today
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August 2008
NATIONAL SEMICONDUCTOR CORPORATION CONFIDENTIAL© 2008 National Semiconductor Corporation. All Rights Reserved.
Hi-Rel Focused New Product Development
Applications AOCS Power CommunicationSpace Imaging
System FunctionMaintain or Change
OrbitPayload & Bus
Backbone of Communications Market
Integral in National Security and Tracking
System Requirements
Lower Power, Increase Precision
Higher Efficiency, <1.2V, Faster Response Time, High Currents
Higher Bandwidth, Lower Noise Power Ratio, Lower Power
Lower Power, Higher Resolution, More Integration
Products Developed
1 MSPS ADC & DACs
Precision Amps
LDOSHigh Speed & Giga Sample
ADCsLow Power Analog
Front Ends
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August 2008
NATIONAL SEMICONDUCTOR CORPORATION CONFIDENTIAL© 2008 National Semiconductor Corporation. All Rights Reserved.
ADC128S102WGRQV - QMLV Available today!
8-Channel, 12-Bit, 50 KSPS to 1MSPS, General Purpose ADC
– Only 2.3mW of Power
• 0.06 uW in Power Down
– Eight Input Channels
– DNL – -0.2 to +0.4 LSB typical
– INL – +/- 0.4 LSB typical
– Split Supplies
• VA 2.7V to 5.25V
• VD 2.7V to VA
– SPI Digital Output
– 16ld Gull Wing Ceramic Cerpac
– Space Level Version
• TID of 100 krad(Si)
• Single Event Latchup > 120 MeV
– Order as 5962R0722701VZA
50 KSPS 1 MSPS
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August 2008
NATIONAL SEMICONDUCTOR CORPORATION CONFIDENTIAL© 2008 National Semiconductor Corporation. All Rights Reserved.
ADC128S102WGRQV Specifications
SPECIFICATION ADC128S102WGRQVResolution 12 bits
Input Channels 8Sampling Rate 50 KSPS to 1MSPSVoltage Supply +2.7V to +5.25V
Input Range 0 to VA
Reference InternalOutput Data Format SPI, QSPI, Microwire, DSP Interfaces
Guaranteed No Missing Codes 4096 Codes
DNL -0.7 to + 0.9 LSB (max)
@VA=VD=3.0V
INL +/- 1.0 LSB (max) @VA=VD=3.0V
SNR 73 dB (typ)SINAD 73 dB (typ)ENOB 11.8 bits (typ)THD -90 dB (typ)
SFDR 92 dB (typ)Offset Error +/-2.3 LSB (max)
Gain Error +/- 2.0 LSB (max)
• Std Ceramic package WG16A
• 8 Channels in only 16 pins– Reduces board space
and weight– Reduces PCB traces
and cabling
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August 2008
NATIONAL SEMICONDUCTOR CORPORATION CONFIDENTIAL© 2008 National Semiconductor Corporation. All Rights Reserved.
DAC121S101WGRQV - QMLV Available Now!
12-Bit Micro Power General Purpose DAC with Rail-to-Rail Output
010100110100110010110011010101001101001
1001011001101010100110100110010110011010101001101001
1001011001101
Vcc
Gnd
DinSclkSnyc
Vout
– Only 0.64mW of Power• 0.14 uW in Power Down
– Supply range of +2.7V to +5.5V
– Guaranteed Monotonic
– DNL +0.25/-0.15 LSB
– 3-wire 20MHz SPI Digital Interface
– Settling Time 12μS– Hermetic 10ld Gull Wing Ceramic Cerpac
– Space Level Version
• TID of 100 krad(Si)
• Single Event Latchup > 120 MeV
– Order as 5962R0722601VZA
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August 2008
NATIONAL SEMICONDUCTOR CORPORATION CONFIDENTIAL© 2008 National Semiconductor Corporation. All Rights Reserved.
DAC121S101WGRQV Specifications
SPECIFICATION DAC121S101WGRQVResolution 12 bits
Input Data Format SPI, QSPI, Microwire, DSP InterfaceInput Rate 20 MHz
Voltage Supply Range +2.7V to +5.5VOutput Range Rail-to-Rail
Reference InternalDNL -0.15 to + 0.25 LSB (max)
Output Settling Time 12 us
Full-Scale Error -0.06 %FSR (max)
Gain Error -0.10 %FSR
• Std Ceramic package WG10A
• Serial interface
– Allows for small 10 pin package
– Reduces package footprint and weight
– Reduces PCB traces and cabling
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August 2008
NATIONAL SEMICONDUCTOR CORPORATION CONFIDENTIAL© 2008 National Semiconductor Corporation. All Rights Reserved.
LMP2012WGLQMLV -
Dual Channel, High Precision, Rail-to-Rail Output Op Amp
– Very Low TCVOS – 0.015uV/°C
– Low Input offset voltage of 60 μV over time and temperature.
– No 1/f noise - input-referred voltage noise of 35 nV/ Hz
– Low supply current – 920uA
– Wide gain bandwidth – 3MHz
– 2.7 to 5.0V supply voltage range
– High CMRR – 130 dB
– High PSRR – 120 dB
– Hermetic 10-pin ceramic gullwing flat package
– Space Level version• TID of 50 krad(Si)
• ELDRS qualified to 50 krad(Si)
• Low SET Cross-Section
– Order as 5962L062061VZA
QMLV Available!
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August 2008
NATIONAL SEMICONDUCTOR CORPORATION CONFIDENTIAL© 2008 National Semiconductor Corporation. All Rights Reserved.
No 1/f Noise
Input-Referred Voltage Noise of 35 nV/ Hz
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August 2008
NATIONAL SEMICONDUCTOR CORPORATION CONFIDENTIAL© 2008 National Semiconductor Corporation. All Rights Reserved.
Offset Voltage - Over Supply and Temperature
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August 2008
NATIONAL SEMICONDUCTOR CORPORATION CONFIDENTIAL© 2008 National Semiconductor Corporation. All Rights Reserved.
LM2941QML ELDRs Free 1A LDO
• Features– 1A Adjustable Regulator
– Adjustable Output Voltage 5V-20V
– Input Voltage up to 26V
– Input protection up to -15V
– Drop Out Voltage 0.5V
– Quiescent Current 10mA
– On / Off Pin
– Internal short circuit current protection
– ELDRs Free up to 100krad/si
Available!
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August 2008
NATIONAL SEMICONDUCTOR CORPORATION CONFIDENTIAL© 2008 National Semiconductor Corporation. All Rights Reserved.
ADC14155 - Space Qualified Available Today!
14-bit 155 MSPS ADC
– Input bandwidth of 1.1GHz
– 11.3 ENOBs at fin=70 MHz, 11 ENOBs at fin=169MHz
– SNR of 70.1 dB at fin=70 MHz, 68.5 dB at fin=169MHz
– SFDR of 82.3 dB at fin=70 MHz, 80.5 dB at fin=169MHz
– Power Consumption of 967mW at 155 MSPS
– Guaranteed no missing codes
– Dual 1.8V and 3.3V operation
– In 48 pin Hermetic Ceramic Quad Flat Pack
– Space Level Version
• TID of 100 krad(Si)
• Single Event Latchup > 120 MeV
PLLV
CO
BPF LMH6517 ADC14155
BPF LMH6517 ADC14155RF
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August 2008
NATIONAL SEMICONDUCTOR CORPORATION CONFIDENTIAL© 2008 National Semiconductor Corporation. All Rights Reserved.
National vs. Competition
Part ADC14155QML XXXX XXXXResolution (bits) 14 14 14Speed (MSPS) 155 105 80Power Consumption 967mW 1.9W 1.75WENOB (Bits) 11.5 10.2 10.1SNR (dB) 69 at 240 MHz 63 at 230 MHz 72 at 200 MHzSFDR (dB) 77 at 240 MHz 64 at 230 MHz 63.5 at 200 MHzAnalog BW 1.1 GHz 570 MHz 270 MHzSEL SEL >120MeV SEL>60MeV
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August 2008
NATIONAL SEMICONDUCTOR CORPORATION CONFIDENTIAL© 2008 National Semiconductor Corporation. All Rights Reserved.
ADC14155 ENOB vs. Temperature
10.500
10.700
10.900
11.100
11.300
11.500
11.700
11.900
-60 -50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140
Temperature deg. C
EN
OB
(b
its
)
socketed device Fs=100MHz, Fin=70MHz, ENOB
soldered device Fs=100MHz, Fin=70MHz, ENOB
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August 2008
NATIONAL SEMICONDUCTOR CORPORATION CONFIDENTIAL© 2008 National Semiconductor Corporation. All Rights Reserved.
ADC14155 SFDR vs. Temperature
60.000
65.000
70.000
75.000
80.000
85.000
90.000
95.000
-60 -50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140
Temperature deg. C
SF
DR
(d
BF
S)
socketed device Fs=100MHz, Fin=70MHz, SFDR
soldered device Fs=100MHz, Fin=70MHz, SFDR
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August 2008
NATIONAL SEMICONDUCTOR CORPORATION CONFIDENTIAL© 2008 National Semiconductor Corporation. All Rights Reserved.
ADC14155 SINAD vs. Temperature
65.000
66.000
67.000
68.000
69.000
70.000
71.000
72.000
73.000
-60 -50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140
Temperature deg. C
SIN
AD
(d
BF
S)
socketed device Fs=100MHz, Fin=70MHz, SINAD
soldered device Fs=100MHz, Fin=70MHz, SINAD
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August 2008
NATIONAL SEMICONDUCTOR CORPORATION CONFIDENTIAL© 2008 National Semiconductor Corporation. All Rights Reserved.
ADC14155 Power vs. Sampling Rate
ADC14155 Power vs. Sampling Rate
y = 1.4916x + 704.39
700
750
800
850
900
950
1000
30 40 50 60 70 80 90 100 110 120 130 140 150 160
Sampling Rate (MSPS)
Po
wer
(m
W)
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August 2008
NATIONAL SEMICONDUCTOR CORPORATION CONFIDENTIAL© 2008 National Semiconductor Corporation. All Rights Reserved.
• Dual Channel 8-Bit 1.5 GSPS ADC, Single 8-bit 3 GSPS ADC
ADC08D1520WGFQV - QMLV Available!
– Max sampling frequency 1.7GSPS– Inputs may be interleaved to obtain a 3GSPS
single ADC– Input bandwidth of 2 GHz– 7.2 ENOBs out to Nyquist– Lowest Power in the industry at 1 W per channel
at 1.5 GSPS from single 1.9V supply– Very low cross-talk (-66 dB @ 1160 MHz)– Low-noise deMUX’d LVDS outputs– Guaranteed no missing codes– In 128 pin Hermetic Ceramic Quad Flat Pack – Space Level Version
• TID of 300 krad(Si)• Single Event Latchup > 120 Mev
– Order as 5962F0721401VZC
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August 2008
NATIONAL SEMICONDUCTOR CORPORATION CONFIDENTIAL© 2008 National Semiconductor Corporation. All Rights Reserved.
128-Lead Ceramic Quad (Gold Lead Finish)NS Package Number EL128A
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August 2008
NATIONAL SEMICONDUCTOR CORPORATION CONFIDENTIAL© 2008 National Semiconductor Corporation. All Rights Reserved.
ADC08D1520WGFQV ENOB vs. Clock Freq,
Input Frequency 248.47MHz versus Temperature.
2
3
4
5
6
7
8
-100 100 300 500 700 900 1100 1300 1500 1700 1900 2100
Clock Frequency (MHz)
EN
OB
Bench @ Room and Hot
HotRoom
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August 2008
NATIONAL SEMICONDUCTOR CORPORATION CONFIDENTIAL© 2008 National Semiconductor Corporation. All Rights Reserved.
Bench FFT , Sample Rate = 1500Mhz , Input 397.47MHz I Channel
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August 2008
NATIONAL SEMICONDUCTOR CORPORATION CONFIDENTIAL© 2008 National Semiconductor Corporation. All Rights Reserved.
Bench FFT , Sample Rate = 1500Mhz , Input 797.47MHz I Channel
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August 2008
NATIONAL SEMICONDUCTOR CORPORATION CONFIDENTIAL© 2008 National Semiconductor Corporation. All Rights Reserved.
Bench FFT , Sample Rate = 1500Mhz , Input 997.47MHz I Channel
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August 2008
NATIONAL SEMICONDUCTOR CORPORATION CONFIDENTIAL© 2008 National Semiconductor Corporation. All Rights Reserved.
Bench FFT , Sample Rate = 1500Mhz , Input 1597.47MHz I Channel
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August 2008
NATIONAL SEMICONDUCTOR CORPORATION CONFIDENTIAL© 2008 National Semiconductor Corporation. All Rights Reserved.
7
7.2
7.4
7.6
7.8
25 35 45 55 65 75 85
Ambient Temperature ('C)
EN
OB
1.0 GSPS Clk +1.0dBm, 247.97Mhz +3.6dBm I/F Non-SPI Mode,FS=1(870mV pk-pk) Note: The Input Amplitude is held constant over
the temperature range.
Key Points: Key Points: Calibration was performed only Calibration was performed only upon Pwr up.upon Pwr up. Then Cal was performed Then Cal was performed again after last temperature sweep.again after last temperature sweep.
Calibration performed at every Temperature Calibration performed at every Temperature Change.Change.
Dynamic vs. TemperatureADC08D1520WGFQV with and without Cal
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August 2008
NATIONAL SEMICONDUCTOR CORPORATION CONFIDENTIAL© 2008 National Semiconductor Corporation. All Rights Reserved.
GiG Evaluation SystemGiG Evaluation System- Enable complete system demo for customers- Enable complete system demo for customers
• NSC’s ceramic evaluation board interfaces to a PC through the USB interface.
• National uses a Xilinx Virtex-4 processor for the data capture.• National also supplies the wavevision software for data analysis.
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August 2008
NATIONAL SEMICONDUCTOR CORPORATION CONFIDENTIAL© 2008 National Semiconductor Corporation. All Rights Reserved.
ADC10D1000QML - Space Qualified Available Today!
Dual Channel 10-Bit 1GSPS ADC, Single 10-bit 2 GSPS ADC– Full Power Bandwidth of 2.8 GHz
– 9.0 ENOBs @ Fin 249MHz Fs – 1.0GHz
8.9 ENOBs @ Fin 498MHz Fs – 1.0GHz
– 56.1dBc SNR @ Fin 249HMz Fs- 1.0GHz
56.8dBc SNR @ Fin 498HMz Fs- 1.0GHz
– 62.1dBc SFDR @ Fin 249MHz Fs – 1.0GHz
62dBc SFDR @ Fin 498MHz Fs – 1.0GHz
– Lowest Power in the industry at 1.45 W per channel at 1GSPS from single 1.9V supply
– Inputs may be interleaved to obtain a 2 GSPS single ADC
– Very low cross-talk (-61 dB @ 497 MHz)
– Low-noise deMUX’d LVDS outputs
– Guaranteed no missing codes
– In 376 pin Hermetic Ceramic Column Grid Array Package
– Space Level Version• TID of 100 krad(Si)
• Single Event Latchup > 120 MeV
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August 2008
NATIONAL SEMICONDUCTOR CORPORATION CONFIDENTIAL© 2008 National Semiconductor Corporation. All Rights Reserved.
National vs. Competition
Part ADC10D1000QML XXXXXXResolution (bits) 10 12Number of Channels 2 1Sample Rate 1 GSPS, 2GSPS 500 MSPSSupply 1.9V 5V & 3.3VDNL +/-0.2 LSB +/-1 LSBPower/Channel 1.45W 2.2WFull Power Bandwidth 2.8 GHz 1GHzSingle Event Latchup SEL >120MeV SEL ~63MeV
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August 2008
NATIONAL SEMICONDUCTOR CORPORATION CONFIDENTIAL© 2008 National Semiconductor Corporation. All Rights Reserved.
Simplified Functional Block Diagram
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August 2008
NATIONAL SEMICONDUCTOR CORPORATION CONFIDENTIAL© 2008 National Semiconductor Corporation. All Rights Reserved.
ENOB vs. Fin
6.66.97.27.57.88.18.48.7
99.39.6
90 290 490 690 890 1090 1290 1490 1690 1890 2090
Input Frequency
EN
OB
I Chan, Ceramic Package @ room, Fclk = 1 GHzQChan, Ceramic Package @ room Fclk = 1 GHz
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August 2008
35
40
45
50
55
60
65
70
75
80
90 290 490 690 890 1090 1290 1490 1690 1890 2090
Input Frequency
SFD
R (d
B)
I and Q Channel (dBc).
I Chan, Ceramic Package @ room Fclk = 1 GHzQChan, Ceramic Package @ room Fclk = 1 GHz
SFDR vs. Fin
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August 2008
NATIONAL SEMICONDUCTOR CORPORATION CONFIDENTIAL© 2008 National Semiconductor Corporation. All Rights Reserved.
NPR vs. Notch Width
• The NPR was measured at each notch width and the average is shown.
• At fc,notch = 320MHz, f=250MHz is never included for all notch widths.
• The measurement stabilizes after about 4%, so a 5% notch width (25MHz, ~750 bins) was chosen for most measurements.
• After 10%, the NPR begins to degrade.
NPR vs. Notch Width
47.00
47.50
48.00
48.50
49.00
0 5 10 15
Width [%]
NP
R [d
B]
NPR
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August 2008
NATIONAL SEMICONDUCTOR CORPORATION CONFIDENTIAL© 2008 National Semiconductor Corporation. All Rights Reserved.
ADC10D1000QML Power
• Power vs Clock Frequency @ Room
1.1
1.4
1.3
1.2
1.5
1.6
1.9
1.8
1.7
Sample Rate (MSPS)
Po
wer
/Ch
ann
el (
W)
ADC10D1000QML
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August 2008
NATIONAL SEMICONDUCTOR CORPORATION CONFIDENTIAL© 2008 National Semiconductor Corporation. All Rights Reserved.
ADC10D1000QML ENOB vs. fCLK
I Channel, LFS = Low I Channel, LFS = High
Writing the LFS bit High improves performance at fCLK = 100 MHz. LFS doubles the charge pump frequency improving performance with low fCLK.
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August 2008
NATIONAL SEMICONDUCTOR CORPORATION CONFIDENTIAL© 2008 National Semiconductor Corporation. All Rights Reserved.
ADC10D1000QML Auto-Sync Feature
• The ADC10D1000QML has an auto-sync mode for continuous synchronization of an arbitrary number of ADCs in a system
• A Master-Slave configuration for the subdivision of the converter clock, CLK, to the slower DCLK output is used
D1<1:10>
D2<1:10>
DCLK
CLK
VIN
TDCLK =4 x TCLK
TCLK
ADC #4
RCLK_IN
RCLK1 RCLK2
AutoSync
D1<1:10>
D2<1:10>
DCLK
CLK
VIN
ADC #2
RCLK_IN
RCLK1 RCLK2
AutoSync
to ADC #5
to ADC #8 to ADC #9
from ADC #1(Master)
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August 2008
NATIONAL SEMICONDUCTOR CORPORATION CONFIDENTIAL© 2008 National Semiconductor Corporation. All Rights Reserved.
376 Column Grid Array Package
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August 2008
NATIONAL SEMICONDUCTOR CORPORATION CONFIDENTIAL© 2008 National Semiconductor Corporation. All Rights Reserved.
376 Column Grid Array Package
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August 2008
NATIONAL SEMICONDUCTOR CORPORATION CONFIDENTIAL© 2008 National Semiconductor Corporation. All Rights Reserved.
Columns from 6Sigma
• Column Core Material: 80Pb/20Sn• Column Diameter: 20mils• Column Height: 87mils• Column Core wrapped with Copper Ribbon
and eutectic solder coating of 37Pb/63Sn
Copper Ribbon
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August 2008
NATIONAL SEMICONDUCTOR CORPORATION CONFIDENTIAL© 2008 National Semiconductor Corporation. All Rights Reserved.
National’s 376 Column Grid Array - Temperature Cycle Board
• Experiment between standard 80Pb/20Sn Copper Ribbon Columns
• Daisy Chain Test Chip
10Min Dwell
10Min Dwell
36°C/Min
125°C
-55°C
Time
1.5min 11.5min
13min0°C
16.5min 26.5min
30min
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August 2008
NATIONAL SEMICONDUCTOR CORPORATION CONFIDENTIAL© 2008 National Semiconductor Corporation. All Rights Reserved.
ADC10D1000 Reinforced Copper Columns after 3000cycles
3000 cycles 80Pb/20Sn 3000 cycles 80Pb/20Sn
3000 cycles 80Pb/20Sn3000 cycles 80Pb/20Sn
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August 2008
NATIONAL SEMICONDUCTOR CORPORATION CONFIDENTIAL© 2008 National Semiconductor Corporation. All Rights Reserved.
ADC10D1000 SEE Testing Results
• No SEL up to 120MeV
• No SEFI up to 120MeV
• SEU for DCLK– Outage Time: 0.02ps/month– Clock Upsets: 2.2X10-5 events/month– Longest Event: typically 1 clock cycle
• SEU Code Error Rate– Outage Time: 0.1ns/ch/month– Data Upsets: 1.8X10-3
events/ch/month– Longest Event: 55ns
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August 2008
NATIONAL SEMICONDUCTOR CORPORATION CONFIDENTIAL© 2008 National Semiconductor Corporation. All Rights Reserved.
Weibull Plots for DCLK
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August 2008
NATIONAL SEMICONDUCTOR CORPORATION CONFIDENTIAL© 2008 National Semiconductor Corporation. All Rights Reserved.
Weibull Plot for Code Error / Channel
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NATIONAL SEMICONDUCTOR CORPORATION CONFIDENTIAL© 2008 National Semiconductor Corporation. All Rights Reserved.
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