Assembly Site Change for TMBS in TO-263 Wire Bond P ackage

Product Group: Diodes Division / September 20, 2019 / PCN-DD-023-2019 Rev. 0

1/3

Assembly Site Change for TMBS in TO-263 Wire Bond Package

DESCRIPTION OF CHANGE: Vishay Diodes Division is moving the assembly location of TMBS® (Trench MOS Barrier Schottky) rectifiers in wire bond TO-263 package from Vishay Tianjin factory, China to an existing subcontractor in Shandong, China. This existing subcontractor was already introduced before for non-TMBS products in TO-263 package through PCN-DD-001-2018. Qualification test has been confirmed to meet and pass all specifications for commercial grade. The datasheet spec. including package outline dimensions remain unchanged and the finished good appearance and reel packing variance are shown in annex. There will be no change in form, fit or function of final products.

CLASSIFICATION OF CHANGE: Assembly Site

REASON FOR CHANGE: Manufacturing capacity consolidation for future expansion.

EXPECTED INFLUENCE ON QUALITY/RELIABILITY/PERFORMANCE: There will be no effect on quality & reliability performance.

PRODUCT CATEGORY: Rectifiers

PART NUMBERS/SERIES/FAMILIES AFFECTED: Involved part numbers are listed in below table.

MBRB10100CT-E3/4W VB20120C-M3/4W VB30150C-E3/4W VBT1060C-E3/4W VBT3045CBP-E3/4W

MBRB10100CT-E3/8W VB20120C-M3/8W VB30150C-E3/8W VBT1060C-E3/8W VBT3045CBP-E3/8W

MBRB10100CT-M3/4W VB20120S-E3/4W VB30150C-M3/4W VBT1060C-M3/4W VBT3045CBP-M3/4W

MBRB10100CT-M3/8W VB20120S-E3/8W VB30150C-M3/8W VBT1060C-M3/8W VBT3045CBP-M3/8W

MBRB1090CT-E3/4W VB20120SG-E3/4W VB30200C-E3/4W VBT1080C-E3/4W VBT3045C-E3/4W

MBRB1090CT-E3/8W VB20120SG-E3/8W VB30200C-E3/8W VBT1080C-E3/8W VBT3045C-E3/8W

VBT1045C-M3/4W VB20120SG-M3/4W VB30202C-M3/4W VBT1080C-M3/4W VBT3060C-E3/4W

VBT1045C-M3/8W VB20120SG-M3/8W VB30202C-M3/8W VBT1080C-M3/8W VBT3060C-E3/8W

VBT6045CBP-M3/4W VB20150C-E3/4W VB40100C-E3/4W VBT1080S-E3/4W VBT3060G-E3/4W

VBT6045CBP-M3/8W VB20150C-E3/8W VB40100C-E3/8W VBT1080S-E3/8W VBT3060G-E3/8W

MBRB10100-E3/4W VB20150C-M3/4W VB40100C-E3H/I VBT1080S-M3/4W VBT3080C-E3/4W

MBRB10100-E3/8W VB20150C-M3/8W VB40100G-E3/4W VBT1080S-M3/8W VBT3080C-E3/8W

MBRB10100-M3/4W VB20150S-E3/4W VB40100G-E3/8W VBT1545CBP-E3/4W VBT3080C-M3/4W

MBRB10100-M3/8W VB20150S-E3/8W VB40120C-E3/4W VBT1545CBP-E3/8W VBT3080C-M3/8W

MBRB1090-E3/4W VB20150SG-E3/4W VB40120C-E3/8W VBT2045BP-E3/4W VBT3080S-E3/4W

MBRB1090-E3/8W VB20150SG-E3/8W VB40120C-M3/4W VBT2045BP-E3/8W VBT3080S-E3/8W

MBRB1090-M3/4W VB20150S-M3/4W VB40120C-M3/8W VBT2045BP-M3/4W VBT3080S-M3/4W

MBRB1090-M3/8W VB20150S-M3/8W VB40150C-E3/4W VBT2045BP-M3/8W VBT3080S-M3/8W

MBRB20100CT-E3/4W VB20200C-E3/4W VB40150C-E3/8W VBT2045CBP-E3/4W VBT4045BP-E3/4W

MBRB20100CT-E3/8W VB20200C-E3/8W VB40150C-E3H/I VBT2045CBP-E3/8W VBT4045BP-E3/8W

MBRB20100CT-M3/4W VB20200G-E3/4W VB40150C-M3/4W VBT2045CBP-M3/4W VBT4045BP-M3/4W

MBRB20100CT-M3/8W VB20200G-E3/8W VB40150C-M3/8W VBT2045CBP-M3/8W VBT4045BP-M3/8W

MBRB2090CT-E3/4W VB20202C-M3/4W VB60100C-E3/4W VBT2045C-E3/4W VBT4045C-E3/4W

MBRB2090CT-E3/8W VB20202C-M3/8W VB60100C-E3/8W VBT2045C-E3/8W VBT4045C-E3/8W

MBRB2090CT-M3/4W VB20202G-M3/4W VB60120C-E3/4W VBT2060C-E3/4W VBT4045C-M3/4W

MBRB2090CT-M3/8W VB20202G-M3/8W VB60120C-E3/8W VBT2060C-E3/8W VBT4045C-M3/8W

VB10150C-E3/4W VB30100C-E3/4W VB60170G-E3/4W VBT2060C-M3/4W VBT4060C-E3/4W

VB10150C-E3/8W VB30100C-E3/8W VB60170G-E3/8W VBT2060C-M3/8W VBT4060C-E3/8W

VB10150C-M3/4W VB30100S-E3/4W VBT10200C-E3/4W VBT2060G-E3/4W VBT5200-E3/4W

VB10150C-M3/8W VB30100S-E3/8W VBT10200C-E3/8W VBT2060G-E3/8W VBT5200-E3/8W

VB10150S-E3/4W VB30100SG-E3/4W VBT10202C-M3/4W VBT2080C-E3/4W VBT5202-M3/4W

VB10150S-E3/8W VB30100SG-E3/8W VBT10202C-M3/8W VBT2080C-E3/8W VBT5202-M3/8W

VB10150S-M3/4W VB30100SG-M3/4W VBT1045BP-E3/4W VBT2080C-M3/4W VBT6045CBP-E3/4W

VB10150S-M3/8W VB30100SG-M3/8W VBT1045BP-E3/8W VBT2080C-M3/8W VBT6045CBP-E3/8W

VB20100C-E3/4W VB30100S-M3/4W VBT1045BP-M3/4W VBT2080S-E3/4W VBT6045C-E3/4W

VB20100C-E3/8W VB30100S-M3/8W VBT1045BP-M3/8W VBT2080S-E3/8W VBT6045C-E3/8W

VB20100S-E3/4W VB30120C-E3/4W VBT1045CBP-E3/4W VBT2080S-M3/4W VBT760-E3/4W

VB20100S-E3/8W VB30120C-E3/8W VBT1045CBP-E3/8W VBT2080S-M3/8W VBT760-E3/8W

VB20100SG-E3/4W VB30120S-E3/4W VBT1045CBP-M3/4W VBT3045BP-E3/4W

VB20100SG-E3/8W VB30120S-E3/8W VBT1045CBP-M3/8W VBT3045BP-E3/8W

VB20120C-E3/4W VB30120SG-E3/4W VBT1045C-E3/4W VBT3045BP-M3/4W

VB20120C-E3/8W VB30120SG-E3/8W VBT1045C-E3/8W VBT3045BP-M3/8W


2/3

VISHAY BRAND: Vishay General Semiconductor

TIME SCHEDULE: Start Conversion Date: December 1st, 2019

Last Time Buy Date from original site: December 20, 2019 Last Time Shipment Date from original site: March 20, 2020

SAMPLE AVAILABILITY: Available upon request.

PRODUCT IDENTIFICATION: The manufacturing site code “E” will be added followed by date code (XXXXE/MXXXE) for identification of the new assembly site.

QUALIFICATION DATA: Available upon request.

RESPONSE DATE: This PCN is considered approved, without further notification, unless we receive specific customer concerns before November 20, 2019 or as specified by contract. Also the generic LTB/LTS schedule could be changed upon specific contract.

ISSUED BY: R.S. Chin, Product Marketing Director – Rectifiers (Standard & Schottky)

For further information, please contact your regional Vishay office. Contact Information:

The Americas Europe Asia

Vishay Semiconductors Vishay Semiconductors Vishay Semiconductors

150 Motor Parkway, Suite 101E Theresienstrasse 2 15D, Sun Tong Infoport Plaza

Hauppauge, NY11788 USA D-74072 Heilbronn, Germany 55 Huai Hai West Road, Shanghai, China

Phone :631 300 3816 Phone : +49 7131 67 3364 (or 3365) Phone: +86 138 1787 2112

Fax : 631 300 3843 Fax: +49 7131 67 2938 Fax: +86 21 5258 7979

[email protected] [email protected] [email protected]

mailto:[email protected]




3/3

ANNEX

TO-263AB Outline

Current New

Reel Packing

Current New (without inner box) (with inner box)

VISHAY GENERAL SEMICONDUCTOR - QUALITY

Vishay Diodes

QualPack-PCN-DD-023-2019 Rev 0_Assembly Site Change for TO-263WB TMBS Package

DEPARTMENT

VISHAY POWER DIODE DIVION

Qual Pack


Vishay Diodes

Table of Content

I. Background

II. CDC

III. Product Description

IV. Data Sheet

V. Dimension and Body Marking

VI. PV Summary

VII. Reliability Test Summary


DEPARTMENT



Vishay Diodes

I．Background

Smallest Chip Biggest Chip Highest voltage

VB10150C-M3 VBT6045C-M3 VB30202C-M3

Part Numbers / Series/ Families affected:

Involved product groups are listed in below table.

Part Number Part Number Part Number Part Number Part Number

MBRB10100CT-E3/4W VB20120SG-E3/4W VB30200C-E3/4W VBT1060C-M3/4W VBT3045CBP-M3/4W

MBRB10100CT-E3/8W VB20120SG-E3/8W VB30200C-E3/8W VBT1060C-M3/8W VBT3045CBP-M3/8W

MBRB10100CT-M3/4W VB20120SG-M3/4W VB30202C-M3/4W VBT1080C-E3/4W VBT3045C-E3/4W

MBRB10100CT-M3/8W VB20120SG-M3/8W VB30202C-M3/8W VBT1080C-E3/8W VBT3045C-E3/8W

MBRB10100-E3/4W VB20150C-E3/4W VB40100C-E3/4W VBT1080C-M3/4W VBT3060C-E3/4W

MBRB10100-E3/8W VB20150C-E3/8W VB40100C-E3/8W VBT1080C-M3/8W VBT3060C-E3/8W

MBRB10100-M3/4W VB20150C-M3/4W VB40100C-E3H/I VBT1080S-E3/4W VBT3060G-E3/4W

MBRB10100-M3/8W VB20150C-M3/8W VB40100G-E3/4W VBT1080S-E3/8W VBT3060G-E3/8W

MBRB1090CT-E3/4W VB20150S-E3/4W VB40100G-E3/8W VBT1080S-M3/4W VBT3080C-E3/4W

MBRB1090CT-E3/8W VB20150S-E3/8W VB40120C-E3/4W VBT1080S-M3/8W VBT3080C-E3/8W

MBRB1090-E3/4W VB20150SG-E3/4W VB40120C-E3/8W VBT1545CBP-E3/4W VBT3080C-M3/4W

MBRB1090-E3/8W VB20150SG-E3/8W VB40120C-M3/4W VBT1545CBP-E3/8W VBT3080C-M3/8W

MBRB1090-M3/4W VB20150S-M3/4W VB40120C-M3/8W VBT2045BP-E3/4W VBT3080S-E3/4W

MBRB1090-M3/8W VB20150S-M3/8W VB40150C-E3/4W VBT2045BP-E3/8W VBT3080S-E3/8W

MBRB20100CT-E3/4W VB20200C-E3/4W VB40150C-E3/8W VBT2045BP-M3/4W VBT3080S-M3/4W

MBRB20100CT-E3/8W VB20200C-E3/8W VB40150C-E3H/I VBT2045BP-M3/8W VBT3080S-M3/8W

MBRB20100CT-M3/4W VB20200G-E3/4W VB40150C-M3/4W VBT2045CBP-E3/4W VBT4045BP-E3/4W

MBRB20100CT-M3/8W VB20200G-E3/8W VB40150C-M3/8W VBT2045CBP-E3/8W VBT4045BP-E3/8W

MBRB2090CT-E3/4W VB20202C-M3/4W VB60100C-E3/4W VBT2045CBP-M3/4W VBT4045BP-M3/4W

MBRB2090CT-E3/8W VB20202C-M3/8W VB60100C-E3/8W VBT2045CBP-M3/8W VBT4045BP-M3/8W

MBRB2090CT-M3/4W VB20202G-M3/4W VB60120C-E3/4W VBT2045C-E3/4W VBT4045C-E3/4W

MBRB2090CT-M3/8W VB20202G-M3/8W VB60120C-E3/8W VBT2045C-E3/8W VBT4045C-E3/8W

VB10150C-E3/4W VB30100C-E3/4W VB60170G-E3/4W VBT2060C-E3/4W VBT4045C-M3/4W

VB10150C-E3/8W VB30100C-E3/8W VB60170G-E3/8W VBT2060C-E3/8W VBT4045C-M3/8W

VB10150C-M3/4W VB30100S-E3/4W VBT10200C-E3/4W VBT2060C-M3/4W VBT4060C-E3/4W


Vishay Diodes Division is moving the assembly location of TMBS® (Trench MOS Barrier Schottky) rectifiers in wire

bond TO-263 package from Vishay Tianjin factory, China to an existing subcontractor in Shandong, China. This

existing subcontractor was already introduced before for non-TMBS products in TO-263 package through

PCN-DD-001-2018.

The representative part numbers for this qualification are as following:

DEPARTMENT



Vishay Diodes

VB10150C-M3/8W VB30100S-E3/8W VBT10200C-E3/8W VBT2060C-M3/8W VBT4060C-E3/8W

VB10150S-E3/4W VB30100SG-E3/4W VBT10202C-M3/4W VBT2060G-E3/4W VBT5200-E3/4W

VB10150S-E3/8W VB30100SG-E3/8W VBT10202C-M3/8W VBT2060G-E3/8W VBT5200-E3/8W

VB10150S-M3/4W VB30100SG-M3/4W VBT1045BP-E3/4W VBT2080C-E3/4W VBT5202-M3/4W

VB10150S-M3/8W VB30100SG-M3/8W VBT1045BP-E3/8W VBT2080C-E3/8W VBT5202-M3/8W

VB20100C-E3/4W VB30100S-M3/4W VBT1045BP-M3/4W VBT2080C-M3/4W VBT6045CBP-E3/4W

VB20100C-E3/8W VB30100S-M3/8W VBT1045BP-M3/8W VBT2080C-M3/8W VBT6045CBP-E3/8W

VB20100S-E3/4W VB30120C-E3/4W VBT1045CBP-E3/4W VBT2080S-E3/4W VBT6045CBP-M3/4W

VB20100S-E3/8W VB30120C-E3/8W VBT1045CBP-E3/8W VBT2080S-E3/8W VBT6045CBP-M3/8W

VB20100SG-E3/4W VB30120S-E3/4W VBT1045CBP-M3/4W VBT2080S-M3/4W VBT6045C-E3/4W

VB20100SG-E3/8W VB30120S-E3/8W VBT1045CBP-M3/8W VBT2080S-M3/8W VBT6045C-E3/8W

VB20120C-E3/4W VB30120SG-E3/4W VBT1045C-E3/4W VBT3045BP-E3/4W VBT760-E3/4W

VB20120C-E3/8W VB30120SG-E3/8W VBT1045C-E3/8W VBT3045BP-E3/8W VBT760-E3/8W

VB20120C-M3/4W VB30150C-E3/4W VBT1045C-M3/4W VBT3045BP-M3/4W

VB20120C-M3/8W VB30150C-E3/8W VBT1045C-M3/8W VBT3045BP-M3/8W

VB20120S-E3/4W VB30150C-M3/4W VBT1060C-E3/4W VBT3045CBP-E3/4W

VB20120S-E3/8W VB30150C-M3/8W VBT1060C-E3/8W VBT3045CBP-E3/8W


DEPARTMENT



Vishay Diodes

II. CDC

Supplier: Vishay Diodes

Manufacturer of Lead

Material: China

Generic/Industry

Number: TO-263AB

Lead/Lead Frame Material

(Type): Copper

Mfr's Part Number: VB1015C-M3 Lead Plating: Pure Tin

Die Line or Process: SKY

Wafer Fab. Site: Taiwan Package Material (Type):

Halogen Free

compound

Assembly Location: China Glass Transition Temp (Tg): typ. 135 °C

Die Attach Method: Wire Bonding Typical Thermal Resistance

R-th JC: 4.0 °C/W

Die Passivation: Oxide


DEPARTMENT



Vishay Diodes

Supplier: Vishay Diodes Manufacturer of Lead Material: China

Generic/Industry

Number: TO-263AB


(Type): Copper

Mfr's Part Number: VB30202C-M3 Lead Plating: Pure Tin



Halogen Free

Compound



1.8°C/W (per diode)

Die Passivation: Oxide R-th JC: 1.0°C/W(per device)


DEPARTMENT

VISHAY POWER DIODE DIVION !


Vishay Diodes

Supplier: Vishay Diodes

Manufacturer of Lead

Material: China

Generic/Industry

Number: TO-263AB


(Type): Copper

Mfr's Part Number: VBT6045C-M3 Lead Plating: Pure Tin



Halogen Free

Compound



R-th JC: 1.5°C/W (per diode)

Die Passivation: Oxide 0.8°C/W(per device)


DEPARTMENT



Vishay Diodes

III．Product Description

Product Description

Product: VB10150C-M3 Package: TO-263AB Issued

by:

Nafion Yang

Technology: Trench MOS Barrier Schottky

Rectifier

Date: 2019/7/23

Function Description: 10A,150V,DUAL TRENCH SKY RECT.

Fab

Taiwan

Assembly Factory

China

Testing Factory

China

Product:

Chip Sub-assembly ( Top view ) :

Finish Goods


DEPARTMENT



Vishay Diodes

Product Description

Product: VB30202C-M3 Package: TO-263AB Issued

by:

Nafion Yang


Rectifier

Date: 2019/7/23


Fab

Taiwan

Assembly Factory

China

Testing Factory

China

Product:


Finish Goods


DEPARTMENT



Vishay Diodes

Product Description

Product: VBT6045C-M3 Package: TO-263AB Issued

by:

Nafion Yang


Rectifier

Date: 2019/7/23


Fab

Taiwan

Assembly Factory

China

Testing Factory

China

Product:


Finish Goods


DEPARTMENT


VB10150C-M3www.vishay.com Vishay General Semiconductor

Revision: 19-Jun-2018 1 Document Number: 87991

For technical questions within your region: [email protected], [email protected], [email protected]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

High-Voltage Trench MOS Barrier Schottky RectifierUltra Low VF = 0.63 V at IF = 3 A

DESIGN SUPPORT TOOLS

FEATURES

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C

• Material categorization:for definitions of compliance please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters, and reverse battery protection.

MECHANICAL DATA

Case: D2PAK (TO-263AB)

Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade

Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102M3 suffix meets JESD 201 class 1A whisker test

Polarity: as marked

Mounting Torque: 10 in-lbs maximum

Notes(1) Pulse test: 300 μs pulse width, 1 % duty cycle(2) Pulse test: Pulse width 40 ms

PRIMARY CHARACTERISTICS

IF(AV) 2 x 5.0 A

VRRM 150 V

IFSM 60 A

VF at IF = 10 A 0.69 V

TJ max. 150 °C

Package D2PAK (TO-263AB)

Circuit configuration Common cathode

TMBS ®

1

2

K

PIN 1

PIN 2

K

HEATSINK

VB10150C

D2PAK (TO-263AB)

click logo to get started

AvailableModels

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL VB10150C UNIT

Maximum repetitive peak reverse voltage VRRM 150 V

Maximum average forward rectified current (fig. 1)per device

IF(AV) 10

A per diode 5.0

Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode

IFSM 60

Voltage rate of change (rated VR) dV/dt 10 000 V/μs

Operating junction and storage temperature range TJ, TSTG -55 to +150 °C

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER TEST CONDITIONS SYMBOL TYP. MIN. UNIT

Instantaneous forward voltageper diode (1)

IF = 3.0 ATA = 25 °C

VF

0.82 -

VIF = 5.0 A 0.99 1.41

IF = 3.0 ATA = 125 °C

0.63 -

IF = 5.0 A 0.69 0.75

Reverse current per diode (2)

VR = 100 VTA = 25 °C

IR

0.5 - μA

TA = 125 °C 0.5 - mA

VR = 150 VTA = 25 °C - 100 μA

TA = 125 °C 1 10 mA

http://www.vishay.com

http://www.vishay.com/doc?32571









RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)

Fig. 1 - Maximum Forward Current Derating Curve

Fig. 2 - Forward Power Dissipation Characteristics Per Diode

Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode

Fig. 4 - Typical Reverse Characteristics Per Diode

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL VB10150C UNIT

Typical thermal resistance per diode RJC 4.0 °C/W

ORDERING INFORMATION (Example)

PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE

TO-263AB VB10150C-M3/4W 1.39 4W 50/tube Tube

TO-263AB VB10150C-M3/8W 1.39 8W 800/reel Tape and reel

Case Temperature (°C)

Ave

rag

e F

orw

ard

Re

ctifie

d C

urr

en

t (A

)

12

10

00 25 50 75 100 125 150 175

Resistive or Inductive Load

Mounted on Specific Heatsink

8

4

2

6

0

1

3

5

0 1 4 6

Average Forward Current (A)

Ave

rag

e P

ow

er

Lo

ss (

W)

D = 0.1

D = 0.2

D = 0.3

D = 0.5D = 0.8

D = 1.0

3

2

4

52

D = tp/T tp

T

Insta

nta

ne

ou

s F

orw

ard

Cu

rre

nt

(A)

Instantaneous Forward Voltage (V)

0 0.2 0.4 0.8 1.2 1.6

100

10

1

0.1

TA = 100 °C

TA = 25 °C

0.6 1.0

TA = 150 °C

TA = 125 °C

1.4

10 20 30 40 50 60 70 80 90 100

0.1

0.01

0.001

10

1

Percent of Rated Peak Reverse Voltage (%)

Insta

nta

ne

ou

s R

eve

rse

Cu

rre

nt

(mA

)

TA = 150 °C

TA = 25 °C

TA = 100 °C

TA = 125 °C

0.00001

0.0001






Fig. 5 - Typical Junction Capacitance Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

1000

10 000

0.1 1 10 100

Reverse Voltage (V)

Jun

ctio

n C

ap

acita

nce

(p

F)

TJ = 25 °C

f = 1.0 MHz

Vsig = 50 mVp-p

10

100

10

10.01 0.1 1 10 100

t - Pulse Duration (s)

Tra

nsie

nt T

he

rma

l Im

pe

da

nce

(°C

/W) Junction to Case

D2PAK (TO-263AB) Mounting Pad Layout

0.670 (17.02)

0.591 (15.00)

0.105 (2.67)

0.095 (2.41)

0.08 (2.032) MIN.

0.15 (3.81) min.

0.33 (8.38) min.

0.42 (10.66) min.

1 2

K

K

0.140 (3.56)

0.110 (2.79)

0.021 (0.53)

0.014 (0.36)

0.110 (2.79)

0.090 (2.29)

0 to 0.01 (0 to 0.254)

0.055 (1.40)

0.047 (1.19)

0.055 (1.40)

0.045 (1.14)

0.190 (4.83)

0.160 (4.06)

0.205 (5.20)

0.195 (4.95)

0.624 (15.85)

0.591 (15.00)

0.037 (0.940)

0.027 (0.686)

0.105 (2.67)

0.095 (2.41)

0.360 (9.14)

0.320 (8.13)

0.411 (10.45)

0.380 (9.65)

0.245 (6.22)

MIN.


V30202C, VF30202C, VB30202C, VI30202Cwww.vishay.com Vishay General Semiconductor

Revision: 14-May-2018 1 Document Number: 87799



Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A

FEATURES

• Trench MOS Schottky technology Gen 2



• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C (for TO-263AB package)

• Solder bath temperature 275 °C maximum, 10 s,

per JESD 22-B106 (for TO-220AB, ITO-220AB, and

TO-262AA package)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912


For use in high frequency DC/DC converters, switching

power supplies, freewheeling diodes, OR-ing diode, and

reverse battery protection.

MECHANICAL DATA

Case: TO-220AB, ITO-220AB, TO-263AB, and TO-262AA

Molding compound meets UL 94 V-0 flammability rating

Base P/N-M3 - halogen-free, RoHS-compliant, and

commercial grade

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102M3 suffix meets JESD 201 class 1A whisker testt

Polarity: as marked

Mounting Torque: 10 in-lbs max.


IF(AV) 2 x 15 A

VRRM 200 V

IFSM 260 A

VF at IF = 15 A (TA = 125 °C) 0.65 V

TJ max. 175 °C

PackageTO-220AB, ITO-220AB, TO-263AB, TO-262AA

Diode variations Common cathode

TO-220AB

12

3

1

K

23

TO-263AB

1

2

K

TO-262AA

PIN 1

PIN 2

K

HEATSINK

PIN 1 PIN 2

CASEPIN 3

PIN 1 PIN 2

PIN 3 K

V30202C

VI30202CVB30202C

TMBS ®

VF30202C

ITO-220AB

PIN 2PIN 1

PIN 3

12

3


PARAMETER SYMBOL V30202C VF30202C VB30202C VI30202C UNIT


Maximum average forward rectified current (fig. 1)per device

IF(AV)

30A

per diode 15

Maximum DC reverse voltage VDC 160 V

Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode

IFSM 260 A

Voltage rate of change (rated VR) dV/dt 10 000 V/μs

Isolation voltage (ITO-220AB only)from terminal to heatsink, t = 1 min

VAC 1500 V








Notes(1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RJA(2) Free air, without heatsink


PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT

Instantaneous forward voltage per diode (1)

IF = 5 A

TA = 25 °C

VF

0.69 -

V

IF = 10 A 0.75 -

IF = 15 A 0.80 0.88

IF = 5 A

TA = 125 °C

0.54 -

IF = 10 A 0.61 -

IF = 15 A 0.65 0.72

Reverse current per diode (2)

VR = 160 VTA = 25 °C

IR

0.8 - μA

TA = 125 °C 1.5 - mA

VR = 200 VTA = 25 °C - 250 μA

TA = 125 °C 4.0 14 mA


PARAMETER SYMBOL V30202C VF30202C VB30202C VI30202C UNIT

Typical thermal resistance

per diode RJC 1.8 4.0 1.8

°C/Wper device RJC 1.0 2.8 1.0

per device RJA (1)(2) 52 60 52



TO-220AB V30202C-M3/4W 1.89 4W 50/tube Tube

ITO-220AB VF30202C-M3/4W 1.75 4W 50/tube Tube

TO-263AB VB30202C-M3/4W 1.38 4W 50/tube Tube

TO-263AB VB30202C-M3/8W 1.38 8W 800/reel Tape and reel

TO-262AA VI30202C-M3/4W 1.46 4W 50/tube Tube







Fig. 1 - Maximum Forward Current Derating Curve

Fig. 2 - Forward Power Loss Characteristics Per Diode



Fig. 5 - Typical Junction Capacitance Per Diode

Fig. 6 - Typical Transient Thermal Impedance Per Device

0

4

8

12

16

20

24

28

32

0 25 50 75 100 125 150 175

Avera

ge F

orw

ard

Rectified

Curr

ent

(A)


V(B,I)30202C VF30202C

RthJA = RthJC

TA, RthJA

0

1

2

3

4

5

6

7

8

9

10

11

12

13

0 2 4 6 8 10 12 14 16 18

Avera

ge P

ow

er

Loss (W

)


D = 0.1

D = 0.2

D = 0.3

D = 0.5

D = 1.0

D = 0.8

D = tp/T

T

tp

0.1

1

10

100

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

Insta

nta

neo

us F

orw

ard

Curr

ent

(A)


TA = 150 °C

TA = 25 °C

TA = 100 °C

TA = 125 °C

TA = 175 °C

0.01

0.1

1

10

100

1000

10 000

100 000

10 20 30 40 50 60 70 80 90 100

Insta

nta

neo

us R

evers

e C

urr

ent

(μA

)


TA = 100 °C

TA = 150 °C

TA = 125 °C

TA = 25 °C

TA = 175 °C

10

100

1000

10 000

0.1 1 10 100

Junctio

n C

ap

acitance (p

F)

Reverse Voltage (V)

TJ = 25 °Cf = 1.0 MHzVsig = 50 mVp-p

0.1

1

10

0.01 0.1 1 10 100

Tra

nsie

nt

Therm

al Im

ped

ance (°C

/W)


Junction to Case

V(B,I)30202C VF30202C







TO-220AB

0.113 (2.87)

0.103 (2.62)

0.415 (10.54)

0.380 (9.65)

0.635 (16.13)

0.625 (15.87)PIN

0.160 (4.06)

0.140 (3.56)

0.057 (1.45)

0.045 (1.14)

0.104 (2.65)

0.096 (2.45) 0.205 (5.20)

0.195 (4.95)

0.035 (0.90)

0.028 (0.70)

0.161 (4.08)

0.139 (3.53)

1 32

0.185 (4.70)

0.175 (4.44)

0.055 (1.39)

0.045 (1.14)

0.350 (8.89)

0.330 (8.38)1.148 (29.16)

1.118 (28.40)

0.560 (14.22)

0.530 (13.46)

0.022 (0.56)

0.014 (0.36)

0.110 (2.79)

0.100 (2.54)

0.603 (15.32)

0.573 (14.55)






TO-262AA

0.401 (10.19)

0.381 (9.68)

0.185 (4.70)

0.175 (4.44)

0.055 (1.40)

0.045 (1.14)

0.110 (2.79)

0.100 (2.54)

0.350 (8.89)

0.330 (8.38)

0.560 (14.22)

0.530 (13.46)

0.022 (0.56)

0.014 (0.35)

1 2 3

0.055 (1.40)

0.047 (1.19)

0.510 (12.95)

0.470 (11.94)

PIN

0.411 (10.45)

0.380 (9.65)

0.035 (0.90)

0.028 (0.70)

0.205 (5.20)

0.195 (4.95)

0.104 (2.65)

0.096 (2.45)

0.057 (1.45)

0.045 (1.14)

0.160 (4.06)

0.140 (3.56)

0.950 (24.13)

0.920 (23.37)


0.670 (17.02)

0.591 (15.00)

0.105 (2.67)

0.095 (2.41)

0.08 (2.032) MIN.

0.15 (3.81) min.

0.33 (8.38) min.

0.42 (10.66) min.

1 2

K

K

0.140 (3.56)

0.110 (2.79)

0.021 (0.53)

0.014 (0.36)

0.110 (2.79)

0.090 (2.29)

0 to 0.01 (0 to 0.254)

0.055 (1.40)

0.047 (1.19)

0.055 (1.40)

0.045 (1.14)

0.190 (4.83)

0.160 (4.06)

0.205 (5.20)

0.195 (4.95)

0.624 (15.85)

0.591 (15.00)

0.037 (0.940)

0.027 (0.686)

0.105 (2.67)

0.095 (2.41)

0.360 (9.14)

0.320 (8.13)

0.411 (10.45)

0.380 (9.65)

0.245 (6.22)

MIN.


Legal Disclaimer Noticewww.vishay.com Vishay

Revision: 01-Jan-2019 1 Document Number: 91000

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,

“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other

disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or

the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all

liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,

consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular

purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of

typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding

statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a

particular product with the properties described in the product specification is suitable for use in a particular application.

Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over

time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s

technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,

including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining

applications or for any other application in which the failure of the Vishay product could result in personal injury or death.

Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.

Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for

such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document

or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

© 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED


VBT6045C-M3www.vishay.com Vishay General Semiconductor




Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.33 V at IF = 10 A

FEATURES

• Trench MOS Schottky technology



• Meets MSL level 1, per J-STD-020,

LF maximum peak of 245 °C

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912


For use in high frequency DC/DC converters, switching

power supplies, freewheeling diodes, OR-ing diode, and

reverse battery protection.

MECHANICAL DATA

Case: TO-263ABMolding compound meets UL 94 V-0 flammability rating

Base P/N-M3 - halogen-free, RoHS-compliant, and

commercial grade

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102M3 suffix meets JESD 201 class 2 whisker test

Polarity: As marked


Package TO-263AB

IF(AV) 2 x 30 A

VRRM 45 V

IFSM 320 A

VF at IF = 30 A 0.47 V

TJ max. 150 °C

Diode variations Common cathode

TO-263AB

1

2

K

TMBS ®

PIN 1

PIN 2

K

HEATSINK

VBT6045C


PARAMETER SYMBOL VBT6045C UNIT


Maximum average forward rectified current(fig. 1)

per deviceIF(AV)

60A

per diode 30

Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load

IFSM 320 A









Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode


PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT

Instantaneous forward voltage per diode

IF = 10 A

TA = 25 °C

VF (1)

0.44 -

V

IF = 15 A 0.47 -

IF = 30 A 0.54 0.64

IF = 10 A

TA = 125 °C

0.33 -

IF = 15 A 0.37 -

IF = 30 A 0.47 0.56

Reverse current per diode VR = 45 VTA = 25 °C

IR (2)- 3000 μA

TA = 125 °C 18 50 mA


PARAMETER SYMBOL VBT64045C UNIT

Typical thermal resistanceper diode

RJC

1.5°C/W

per device 0.8



TO-263AB VBT6045C-M3/4W 1.38 4W 50/tube Tube

TO-263AB VBT6045C-M3/8W 1.38 8W 800/reel Tape and reel


Ave

rag

e F

orw

ard

Re

ctifie

d C

urr

en

t (A

)

70

60

50

40

10

0100 110 120 130 140 150

30

20

0

2

12

14

16

20

0 5 15 30 35


Ave

rag

e P

ow

er

Lo

ss (

W)

D = 0.1

D = 0.2

D = 0.3D = 0.5

D = 0.8

D = 1.0

20

D = tp/T tp

T6

8

10

4

2510

18








Fig. 5 - Typical Junction Capacitance Per Diode

Fig. 6 - Typical Transient Thermal Impedance Per Diode



0 0.2 0.4 0.7

100

10

1

0.1

TA = 150 °C

TA = 125 °C

TA = 100 °C

TA = 25 °C

0.6

Insta

nta

ne

ou

s F

orw

ard

Cu

rre

nt

(A)

0.1 0.3 0.5

20 40 60 80 100

1

0.1

0.01

0.001

100

10


Insta

nta

ne

ou

s R

eve

rse

Cu

rre

nt

(mA

) TA = 150 °C

TA = 25 °C

TA = 100 °C

TA = 125 °C

100

10 000

100 000

0.1 1 10 100

Reverse Voltage (V)

Ju

nctio

n C

ap

acita

nce

(p

F)

TJ = 25 °C

f = 1.0 MHz

Vsig = 50 mVp-p

1000

10

0.10.01 0.1 1 10 100


Junction to Case

1

Tra

nsie

nt T

he

rma

l Im

pe

da

nce

(°C

/W)


0.670 (17.02)

0.591 (15.00)

0.105 (2.67)

0.095 (2.41)

0.08 (2.032) MIN.

0.15 (3.81) min.

0.33 (8.38) min.

0.42 (10.66) min.

1 2

K

K

0.140 (3.56)

0.110 (2.79)

0.021 (0.53)

0.014 (0.36)

0.110 (2.79)

0.090 (2.29)

0 to 0.01 (0 to 0.254)

0.055 (1.40)

0.047 (1.19)

0.055 (1.40)

0.045 (1.14)

0.190 (4.83)

0.160 (4.06)

0.205 (5.20)

0.195 (4.95)

0.624 (15.85)

0.591 (15.00)

0.037 (0.940)

0.027 (0.686)

0.105 (2.67)

0.095 (2.41)

0.360 (9.14)

0.320 (8.13)

0.411 (10.45)

0.380 (9.65)

0.245 (6.22)

MIN.


Legal Disclaimer Noticewww.vishay.com Vishay

Revision: 08-Feb-17 1 Document Number: 91000

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,

“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other

disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or

the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all

liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,

consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular

purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of

typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding

statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a

particular product with the properties described in the product specification is suitable for use in a particular application.

Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over

time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s

technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,

including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining

applications or for any other application in which the failure of the Vishay product could result in personal injury or death.

Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.

Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for

such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document

or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED



Vishay Diodes

V. Dimension and Body Marking


DEPARTMENT


Unit: mm

Up limit 10.45 9.14 15.85 4.83 1.40 1.40 0.940 0.53 2.79 5.20 3.56 2.67 0.254

Low limit 9.65 8.13 15.00 4.06 1.14 6.22 1.19 0.686 0.36 2.29 4.95 2.79 2.41 0

10.19 8.70 15.18 4.56 1.26 7.58 1.31 0.81 0.51 2.49 5.07 3.13 2.44 0.024

10.29 8.79 15.24 4.58 1.36 7.88 1.37 0.84 0.52 2.68 5.15 3.18 2.51 0.096

10.24 8.74 15.21 4.57 1.30 7.71 1.34 0.82 0.51 2.61 5.10 3.15 2.49 0.052

0.02 0.02 0.02 0.01 0.02 0.08 0.02 0.01 0.00 0.04 0.02 0.01 0.02 0.019

1 2 3 4 5 6 7 8 9 10 11 12 13 14

10.23 8.75 15.22 4.57 1.32 7.82 1.32 0.82 0.51 2.49 5.09 3.15 2.48 0.096

10.24 8.76 15.22 4.58 1.28 7.64 1.31 0.83 0.52 2.60 5.10 3.15 2.46 0.055

10.24 8.73 15.22 4.57 1.36 7.75 1.32 0.83 0.51 2.64 5.10 3.15 2.48 0.040

10.24 8.76 15.24 4.58 1.29 7.60 1.33 0.84 0.51 2.62 5.09 3.18 2.45 0.035

10.25 8.71 15.19 4.57 1.35 7.87 1.35 0.83 0.51 2.64 5.10 3.13 2.51 0.054

10.23 8.76 15.22 4.57 1.28 7.61 1.33 0.83 0.51 2.59 5.07 3.16 2.44 0.093

10.27 8.72 15.21 4.57 1.30 7.67 1.34 0.82 0.51 2.68 5.11 3.16 2.48 0.067

10.25 8.72 15.22 4.56 1.28 7.65 1.32 0.83 0.51 2.62 5.11 3.17 2.49 0.030

10.29 8.73 15.23 4.57 1.30 7.63 1.37 0.82 0.51 2.59 5.11 3.14 2.48 0.074

10.24 8.76 15.20 4.57 1.26 7.58 1.33 0.81 0.51 2.61 5.12 3.15 2.50 0.041

10.19 8.75 15.18 4.56 1.31 7.75 1.31 0.82 0.51 2.64 5.14 3.16 2.50 0.035

10.22 8.75 15.19 4.56 1.30 7.81 1.34 0.82 0.51 2.63 5.15 3.14 2.51 0.048

10.23 8.74 15.19 4.56 1.31 7.88 1.33 0.83 0.51 2.59 5.08 3.14 2.50 0.033

10.23 8.73 15.20 4.56 1.30 7.66 1.32 0.82 0.51 2.66 5.08 3.18 2.50 0.042

10.24 8.73 15.18 4.58 1.31 7.72 1.31 0.82 0.51 2.60 5.07 3.14 2.49 0.058

10.24 8.75 15.19 4.57 1.29 7.69 1.33 0.83 0.51 2.61 5.09 3.17 2.50 0.043

10.26 8.74 15.21 4.57 1.30 7.76 1.34 0.81 0.52 2.62 5.12 3.14 2.50 0.080

10.23 8.76 15.20 4.57 1.31 7.64 1.33 0.84 0.51 2.63 5.09 3.18 2.49 0.042

10.24 8.73 15.21 4.58 1.30 7.65 1.35 0.83 0.51 2.62 5.10 3.16 2.50 0.043

10.28 8.79 15.22 4.58 1.30 7.81 1.35 0.82 0.51 2.60 5.08 3.14 2.50 0.077

10.23 8.76 15.20 4.56 1.30 7.75 1.36 0.82 0.51 2.65 5.10 3.14 2.50 0.042

10.25 8.74 15.22 4.56 1.29 7.69 1.33 0.83 0.52 2.62 5.10 3.13 2.50 0.042

10.24 8.72 15.21 4.56 1.30 7.71 1.36 0.82 0.51 2.62 5.08 3.14 2.51 0.024

10.25 8.73 15.22 4.56 1.28 7.66 1.34 0.83 0.51 2.59 5.08 3.16 2.51 0.035

10.24 8.72 15.20 4.56 1.30 7.74 1.34 0.82 0.51 2.60 5.11 3.15 2.49 0.045

10.25 8.70 15.21 4.56 1.30 7.67 1.35 0.83 0.52 2.61 5.12 3.17 2.51 0.038

10.23 8.71 15.22 4.56 1.32 7.71 1.35 0.82 0.51 2.56 5.08 3.16 2.50 0.056

10.24 8.74 15.20 4.56 1.29 7.84 1.33 0.82 0.51 2.67 5.09 3.16 2.50 0.074

10.24 8.72 15.21 4.56 1.29 7.66 1.31 0.83 0.51 2.63 5.08 3.14 2.51 0.063

10.24 8.74 15.23 4.57 1.29 7.58 1.37 0.82 0.51 2.58 5.09 3.14 2.49 0.066

20

21

22

29

30

23

24

25

26

27

28

8

NO.

Stdev

Average

TO-263AB

5

6

7

Max

Min

1

2

3

4

9

10

11

12

13

14

15

16

17

18

19

1

23

4

56

7

8

9

10

1112

13

14


Vishay Diodes

Test Parameters Value

VF (V), <1.41V min 1.10

IF=5.0A max 1.13

Ta= 25°C avg 1.11

sigma 0.012

VF (V), <0.75V min 0.67

IF=5.0A max 0.68

Ta=125°C avg 0.68

sigma 0.002

IR (uA), < 100uA min 0.82

VR=150V max 1.03

Ta=25°C avg 0.94

sigma 0.06

IR (mA), < 10mA min 0.79

VR=150V max 0.95

Ta= 125°C avg 0.88

sigma 0.046

DEPARTMENT


QualPack-PCN-DD-023-2019 Rev 0_Assembly Site Change forTO-263WB TMBS Package

VI．Electrical Parameters Verification

Electrical Verification - VB10150C-M3


Vishay Diodes

Electrical Verification - VB30202C-M3


VF (V) <0.88V min 0.79

IF=15A max 0.80

Ta=25°C avg 0.79

sigma 0.00

VF (V) <0.72V min 0.65

IF=15A max 0.66

Ta=125°C avg 0.65

sigma 0.00

IR (uA)<250uA min 2.0

VR=200V max 2.9

Ta=25°C avg 2.3

sigma 0.3

IR (mA)<14mA min 2.3

VR=200V max 3.0

Ta=125°C avg 2.6

sigma 0.2


DEPARTMENT



Vishay Diodes

Electrical Verification - VBT6045C-M3


VF (V)<0.64V min 0.55

IF=30A max 0.56

Ta=25°C avg 0.55

sigma 0.003

VF (V)<0.56V min 0.49

IF=30A max 0.52

Ta=125°C avg 0.50

sigma 0.005

IR (uA)<3000uA min 14.5

VR=45V max 43.2

Ta=25°C avg 31.9

sigma 5.4

IR (mA)<50mA min 12.8

VR=45V max 19.9

Ta=125°C avg 18.2

sigma 1.6


DEPARTMENT


Environmental Test Summary

Test Item & Condition Duration VB10150C-M3 VBT6045C-M3 VB30202C-M3

HTRB 168Hrs 0 / 77 0 / 77 0 / 77

@100%VR/Max Tj 500Hrs 0 / 77 0 / 77 0 / 77

2 KV 0 / 10 0 / 10 0 / 10

6 KV 0 / 10 0 / 10 0 / 10

8 KV 0 / 10 0 / 10 0 / 10

500 V 0 / 10 0 / 10 0 / 10

1000 V 0 / 10 0 / 10 0 / 10

Post 0 / 30 0 / 30 0 / 30

Pre-conditioning( Baking-->Moisture-->Solder Reflow ) 0 / 308 0 / 308 0 / 308

168 Cycs 0 / 77 0 / 77 0 / 77

500 Cycs 0 / 77 0 / 77 0 / 77

24 Hrs 0 / 77 0 / 77 0 / 77

48 Hrs 0 / 77 0 / 77 0 / 77

1440 Cycs 0 / 77 0 / 77 0 / 77

4286 Cycs 0 / 77 0 / 77 0 / 77

24Hrs 0 / 77

48Hrs 0 / 77

44Hrs 0 / 77

132Hrs 0 / 77

168Hrs 0 / 77

500Hrs 0 / 77

HAST

ESD(HBM)

@ 100pF / 1500 Ω

ESD(CDM)

Temperature Cycling

@-55°C / +150°C / 30min.

UHAST

@Ta= 130°C , 85%R.H.

IOL

@DTJ=100°C / TON=TOFF=3.5min.

HAST

@ 130°C / 85%R.H. / 80%VR(Max 42V)

@ 110°C / 85%R.H. / 80%VR(Max 42V)

Solder Dip @265°C/10 sec

H3TRB

@ 85°C / 85%R.H. / 80%VR(Max 100V)

Vishay Diodes


Assembly Site Change for TMBS in TO-263 Wire Bond P ackage

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