ALD of Tin Monosulfide-v2 - Harvard University
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Citation Sinsermsuksakul, Prasert, Adam S. Hock, Roy G. Gordon. 2011. ALDof Tin Monosulfide, SnS. Proceedings of the AVS 58th ItnernationalSymposium and Exhibition, October 30 - November 4, 2011,Nashville, TN: 1-18.
Citable link http://nrs.harvard.edu/urn-3:HUL.InstRepos:33950783
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We presepresentedabout 100stoichiomorthorhomunder cerdiffractionloosely pasemicondfilms also for solar cspectrum sufficient absorber
ent a new procd at the confe0 to 250 oC. Netric to within
mbic structurertain conditionn. The morphoacked plates, ucting with ligshow strong
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equiax
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of tin(II) sulfidrocess operatwere detectedng accuracy ond in the bulk
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ctivity. Their oncy. The opticnear infrared).ar spectrum. Tcells made of
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de, SnS, fromtes at low subd in the deposof RBS, abouk material (asbic phase is aom dense equte and growtho 1016 holes coptical band gcal absorption. Thus a very These propertearth-abunda
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m H2S and a nbstrate tempesited materiat + 1%. The p
s in the mineraalso detected uiaxed columnh conditions. Tcm-3 and holegap is about 1n is very stronsmall thickne
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novel tin sourceratures, in thl by XPS or Rphase correspal Herzenbergby X-ray andnar polycrystaThe SnS film mobility > 6 c.3 eV, which
ng (over 105 cess, less thanS a good canoxic materials
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00
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Har
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Uni
vers
ity6
Tin(
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mid
inat
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Ni Pr
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atili
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Har
vard
Uni
vers
ity7
ALD
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cess
for S
nS
6.00
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7.00
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ty Sn
area
l den
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vs
# of
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4.00
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5.00
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real densioms/cm2)
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0
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2.00
E+1
7
Snar(ato
010
0020
0030
0040
0050
0060
00
# of
cyc
les
Har
vard
Uni
vers
ity8
Tem
pera
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Dep
ende
nce
of G
row
th
250
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6
3.00
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6
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Sn(ato
100
150
200
250
300
Subs
trat
e te
mpe
ratu
re (o
C)
Har
vard
Uni
vers
ity9
SnS
Com
posi
tion
701.2
1.4
1.6
1.8
Energy(MeV)
5060 Yield
SnS
203040 NormalizedY
SnS 1
+0.0
1
800
900
1000
1100
1200
1300
1400
Ch
l
010S
Cl
Sn
Channel
Har
vard
Uni
vers
ity10
SEM
of S
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lms
Dep
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120
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0 cy
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1000
cyc
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3000
cyc
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5000
cyc
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5000
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Har
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Uni
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11
Dis
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XR
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Min
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d SnS
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d XR
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22.01
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001
3.87
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26.01
3.42
33.
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3.33
120
2747
324
43
243
�02
127.47
3.24
43.
243
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30.47
2.93
12.
919
�10
131.53
2.83
52.
823
2.84
111
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-2.53
121
39.05
2.30
52.
302
2.29
131
44.73
2.02
42.
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2.02
141
45.49
1.99
211.
999
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251.31
1.77
91-
1.78
151
53.15
1.72
191.
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671
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162
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X-R
ay D
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1.62
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a�
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and
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ide
view
12
SnS
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ical
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orpt
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1.E
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1.E
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little
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ptim
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ar c
ells
Bd
dith
ii
filth
ik
Ban
d ga
p de
crea
ses
with
incr
easi
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lm th
ickn
ess
=> la
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ton
diam
eter
, sm
all e
ffect
ive
mas
s, h
igh
mob
ility
Har
vard
Uni
vers
ity13
gg
y
SnS
isan
abso
rber
fore
arth
abun
dant
non
toxi
cso
larc
ells
Sum
mar
ySn
Sis
an
abso
rber
for e
arth
-abu
ndan
t, no
n-to
xic
sola
r cel
ls
ALD
from
tin(
II) a
mid
inat
ean
d H
2S =
> Sn
S
pure
, sto
ichi
omet
ric, p
olyc
ryst
allin
e Sn
S
optic
al a
nd e
lect
rical
pro
pert
ies
suita
ble
for t
hin
sola
r cel
ls
ALD
sui
tabl
e fo
r pro
toty
pe d
epos
ition
of s
olar
cel
ls(w
ell-c
ontr
olle
d co
mpo
sitio
n an
d st
ruct
ure)
anot
her p
ossi
ble
appl
icat
ion:
thin
-film
tran
sist
ors
on p
last
ic
Har
vard
Uni
vers
ity15