AJA MAGNETRON SPUTTER SYSTEM OPERATING : aja sputter standard operating procedure version: 1.0...

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  • DOCUMENT: AJA SPUTTER STANDARD OPERATING PROCEDURE Version: 1.0

    AJA MAGNETRON SPUTTER SYSTEM OPERATING MANUAL

    Version: 1.0 Oct 2009

    UNIVERSITY OF TEXAS AT ARLINGTON

    Nanofabrication Research and Teaching

    Facility

  • DOCUMENT: AJA SPUTTER STANDARD OPERATING PROCEDURE Version: 1.0

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    TABLE OF CONTENTS

    1. Introduction..3 1.1 Scope of Work......3 1.2 Description.3 1.3 Safety.....3

    2. Hardware ...................................5 3. Requirements.......5

    3.1 Training......5 3.2 Restrictions....5 3.3 System Checks.....6 3.4 Vacuum Checks....8

    4 Operating Procedure.............9 4.1 System Login.........9 4.2 Main Chamber Pump Down......12 4.3 Wafer Mounting...12 4.4 Programming Thickness Monitor..17 4.5 Sputter Rate Testing...19 4.6 Manual Substrate Clean.20 4.7 Manual Sputter Deposition.21 4.8 Reactive Sputter...23 4.9 Automatic Sputter Mode..26 4.10 Wafer Transfer..37 4.11 System Shutdown.42

    5 Sample Recipes..............44

  • DOCUMENT: AJA SPUTTER STANDARD OPERATING PROCEDURE Version: 1.0

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    1 INTRODUCTION

    1.1 Scope These procedures apply to the AJA International UHV Magnetron Sputtering system. All maintenance should follow the procedures set forth in the manufacturers maintenance and operations manuals. This document is for reference only. Personnel should be trained by authorized staff before operating this equipment.

    1.2 Description The AJA International UHV Sputtering System uses five shuttered magnetron guns containing two inch diameter targets to sputter deposit single thin films or stacked film layers on 1- 4 diameter wafers, glass slides and small samples with optional substrate heating and rotation for enhanced film properties and improved film uniformity. This tool is equipped with one DC gun for the deposition of conductive material ( Al ) and four RF guns for the deposition of semi- conductive or non-conductive materials ( Si, SiO2, Al2O3, Si3N4 ,Cr2O3,ITO ,YBCO and other approved materials). This tool also has RF substrate biasing with controlled Ar, N2, O2 gas flow for plasma substrate cleaning or ion assisted reactive sputter deposition.

    1.3 Safety 1.3.1 This machine is connected to HIGH VOLTAGE. Be very careful and aware of

    electrical hazards. If you encounter any electrical malfunctions, contact NanoFAB staff immediately

    1.3.2 This machine uses DC and RF frequency power. DO NOT operate this machine with any DC or RF cables disconnected or any component enclosures/panels open.

    1.3.3 This machine can heat substrates to high temperatures (850C). Make sure you wait until the substrate temperature is < 50 C before transferring your sample to the load lock chamber.

    1.3.4 This machine has only water flow interlocks to prevent over heating the substrate heater, RF generators, turbo pumps and quartz crystal. If you encounter any water flow malfunctions or the water flow interlock light comes ON notify NanoFAB staff immediately.

    1.3.5 This machine has an EMO (Emergency Off) switch/button mounted on the top panel. The EMO switch should be pressed only in an emergency. An emergency would be fire, smoke, electrocution hazards, and an injury to anyone using this particular piece of equipment. If the EMO is pressed notify NanoFAB staff immediately.

    1.3.6 This machine uses Ar, N2, and O2 gas which in high concentrations can be asphyxiates. The process gases are normally pumped out of the system. If the process pressure is not being maintained or system cannot reach base pressure notify NanoFAB staff immediately.

    1.3.7 Read any posted NanoFAB Engineering Change Notices (ECN) for any hardware, process or safety changes before running the tool.

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    Fig: 1 (a)

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    2 HARDWARE

    2.1 Process Gases: Ar, N2, O2

    2.2 DC Magnetron: 500 watts maximum

    2.3 RF Magnetron: 300 watts maximum

    2.4 Substrate temperature: 25 C to 850 C

    3 REQUIREMENTS

    3.1 Training You must be a qualified user on the AJA International HV Sputtering System. The sputter system can be used to deposit Si, SiO2, Si3N4, YBCO, ITO, Al2O3 and other approved

    3.2 Restrictions

    materials on 1- 4 diameter wafers, glass slides, and small samples by using the substrate holder clips. Extremely small pieces can be processed by using longer holder clips or bonding to larger carrier wafer (bond with drop silver paint, vacuum tape, and drop of baked photo resist, MUNG II paste or other approved bonding material)

    3.2.1 When sputtering any material the wafer holder MUST be mounted to the rotator spindle to prevent coating the heating lamp window.

    3.2.2 If sputtering in manual mode, the plasma parameters (RF forward and reflected power, gas flows, sputter pressure, etc.) should be monitored every 30 minutes. If any parameters are > 5% of set points or reflected power is > 5% of forward power set point contact NanoFAB staff immediately.

    3.2.3 The maximum RF power to any RF Gun is 150 Watts during process. The minimum RF or DC power ramping is 100 Watts/min.

    3.2.4 The maximum sputter time is 5 hours. If more sputter time is needed then stop your process and keep system idle (chamber under high vacuum) for 1 hour, then resume process.

    3.2.5 No substrate heating allowed if using bonding material. 3.2.6 When using the substrate heater be careful not to over heat the wafer/samples to

    prevent any wafer breakage, metal or any other material to flow. 3.2.7 IF you are using the substrate heater the Mounting Plate Rotational controller

    must be ON to avoid damaging the substrate holder. 3.2.8 If you are using the substrate heater make sure you wait until the substrate

    temperature is < 50C before transferring your wafer to the load lock chamber. 3.2.9 When plasma cleaning the wafer the Mounting Plate Rotational controller must

    be ON. 3.2.10 When plasma cleaning the wafer the heater must be OFF. 3.2.11 When plasma cleaning or reactive sputtering do not exceed 50 Watts applied to

    substrate bias.

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    3.2.12

    3.3 System checks

    If you are depositing Al2O3 contact NanoFAB staff for power ramping recipe specifications.

    3.3.1 Check to ensure the system water flow interlock light located on the top panel is OFF.

    3.3.2 Check to ensure system MAINS POWER switches/breakers (PD-30A, PD-30S) are in the ON position.

    3.3.3 Check to ensure the Main Chamber Lid is closed and locked, and Load Lock lid is set in Load Lock chamber.

    3.3.4 Check to ensure switches/breakers for VACUUM PUMPS/ MAIN CHAMBER (PD-30A) and VACUUM PUMPS/ LOAD LOCK (PD-30S) are in the ON position.

    Fig 3.3.1 - 3.3.4 Fig 3.3.5

    3.3.5 Check to ensure the system lap top computer is on and displays Microsoft desktop screen.

    3.3.6 Check to ensure the switch/breaker for heater power (SHQ-15A) is in ON position and the GREEN HEAT selector switch to REM position.

    3.3.7 Check to ensure the SHIMADZU chamber turbo controller LCD displays ROT =100% and the green LED power, rotation and normal speed lights are ON. Check there is no temperature or alarm LEDs are on.

    Fig 3.3.6 Fig 3.3.7 3.3.8 Check to ensure the VAT ADAPTIVE PRESSURE CONTROLLER green remote

    LED is ON.

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    3.3.9 Check to ensure the MAXTEK thickness monitor power switch to ON 3.3.10 Check to ensure the ADVANCED ENERGY MDX 500 dc power supplies green

    remote and interlock LEDs are ON. At this time only DC1 is used ( DC power supply to the left)

    Fig 3.3.8 Fig 3.3.10 3.3.11 Check to ensure the AJA 100/300 MM3X manual matching network SOURCE

    POSITION is set to 1. 3.3.12 Check to ensure all SEREN RF generators display the ANALOG PWR MST and

    only the blue led is on.

    Fig 3.3.11 Fig 3.3.12 3.3.13 Check to ensure all SEREN matching networks LOAD and TUNE red LEDs are

    in AUTO. 3.3.14 Check to ensure the Mounting Plate Rotational controller is OFF ( green light off ) 3.3.15 Open the Main Chamber/Load Lock turbo pumps N2 vent valve (position the

    valve pointer in parallel to inlet line). This valve is located at the rear side of system.

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    Fig 3.3.13 Fig 3.3.15

    3.3.16 Check to ensure the wafer transfer arm is at the zero position. (transfer arm moved all the way to the right side)

    3.3.17 Check the Chamber N2 vent valve is fully closed by turning valve CW until it stops.

    3.3.18 Check to ensure the turbo pump and chamber lid water connections and feed troughs have no water leaks.

    Fig 3.3.17 Fig 3.3.18 3.3.19 If any of the above system checks are not met notify NanoFAB staff

    immediately

    3.4 Vacuum checks

    .

    3.4.1 When you first approach the system the MAIN Chamber and Load Lock should be in vacuum. However to ensure equipment performance and minimize equipment down time the following checks MUST be made.

    3.4.2 Check to ensure the VAT ADAPTIVE PRESSURE CONTROLLER LCD displays pos. sp: 000 ( the VAT gate valve is fully c