AIDA WP8.4 Qualification of components (Electronics)

14/10/2013 Mauro Citterio - AIDA 2nd Annual Meeting: WP8.4

AIDA WP8.4 Qualification of components

(Electronics)

Mauro Citterioon behalf of INFN Milano


INDEX• Literature/Standard Survey …. Some results

• Irradiation requirements• Peculiarity of High Energy Physics (HEP) environment

• Test case presented: Electronics for the ATLAS Calorimeter

• Test plan …. In the following months

• Some on-going measurements• In collaboration with LHC experiments

• In collaboration with other INFN programs• Power MOSFETs under irradiation

• exposed to ionizing radiation (gamma 60Co)

• exposed to heavy ions (75Br at 155 MeV) and protons (216 MeV)

• Conclusions

Mauro Citterio - AIDA 2nd Annual Meeting: WP8.4

34/10/2013

• Existing data on “rad-tolerant” electronics components from LHC show a “non–uniform” set of results• Very different “environment” where components needs to operate

• Literature dominated by “non-HEP” Standard• Sources: IEEE NSREC Data Workshop and Proceedings, RADECS Data

Workshop and Proceedings, ESA Contract Reports, ESA Radiation Design Handbook. PSS 609, IEEE Publications

• Total Ionizing Dose Standards: SCC 22900 (ESA SCC), Mil Std 883E Method 1019.6 (DESC), ASTM F1892 (includes ELDRS)

• Single Event Standards: SCC 29500 (ESA SCC), EIA/JEDEC Standard EIA/JESD57, ASTM F1192

• However some guidelines can be extracted, at least to compare with similar studies already made

Literature/Standard Survey


44/10/2013

Dose-rates for testing.- High Dose Rate:

SCC 22900 Window 1. 1-10 rads/sec.MIL883E 1019.6. 50-300 rads/sec.

- Low Dose Rate:SCC 22900 Window 2. 0.01-0.1 rads/sec.MIL883E 1019.6. 0.01 rads/sec.Elevated Temp. 0.5-5 rads/sec.

Sample Size/Traceability

Sample Size: Total Ionizing Dose. Minimum 5 samples. 4 test, 1 reference. Single Event. 3 samples recommended.

Traceability Use single Lot Date Code for test to avoid “Safety Factors”

Useful inputs from survey

Test conditions

It is easy to do, but it is rarely done

Typical condition

Not Common in our field,Should be considered …. It could be the “real worst case”


54/10/2013

Test conditions

Limited Comparison


Component database: must contain “proper” information on the testing procedurePredict radiation spectra/doses for the experimental “region” where tested components will operate, before doing the test.


ATLAS Liquid Argon Electronics:The major background is due to neutrons and gammas.On the right is a simulated spectrum of particles.

How the space environment looks like (at least for neutron)?

Case Study:


Space environment is similar at least for the neutron spectra up to 100 MeV (after a scale factor ).

We need to find irradiation facilities with similar spectra.

Case Study for neutron:Courtesy of Helio Takai (BNL)


Some facilities exist and data are available from literature

They are the best choice to irradiate components

AIDA facilities should be “included” in a similar plot

This test case should be repeated for various environment !!! … on going activity

Case Study for neutron:IEEE paper, Author: Charles Slayman


Moreover the energy of the beam has an effect on the degradation

We need not only to have a metric to compare against but we need also to “evaluate” rad tolerance of new technology

More “HEP typical” test cases are under study

Case Study for proton:Courtesy of Helio Takai (BNL)


The research program will be focused on the characterization against radiation (ionizing and not) of electronics components and circuits commonly used in high energy physics experiments.

• Some class of devices to be tested are

• ADCs, MUX, Clock generator, PLLs, • Field Programmable Gate Arrays (FPGA), • Power Mosfets, GaN Mosfets• DC-DC converter and Point of Loads (POLs)

• The devices to be tested will be both commercial and custom made devices.

• The latest are mostly component developed by CERN or CERN's collaborator in various technologies, such as silicon CMOS (130 and 65 nm), Silicon Germanium (SiGe 250 and 130 nm) and Silicon on Saffire (250 and 180 nm).

Test Plan

Beam lineDevice

under testBeam lineDevice

under test


Displacement damage tests will be performed with both proton an neutron beams:

• TSL facilities (Uppsala) PAULA and ANITA are the current baseline• UCL at Louvain-la-Neuve, LIF beam line is under consideration

Test will be performed on packaged and bare die devices (if available)

• Max beam energy at extraction is relevant for commercial devices

INFN Milano will be willing to share beam time with other member of the collaboration for testing other type of devices.

List of the parameter to be tested is very long and need to be shortened, optimized and documented

• Digital and analogue electronics have different set of parameters to be monitored

Test Plan


On going measurements

INFN Milano is participating to test on going in the ATLAS collaboration

Various ADCs are tested for TID and DD.

The data will be inserted in the AIDA Database

Still very difficult to get a “standard” report of the tests.

Courtesy of Huchen Cheng (BNL)



Power Mosfets exposed to gamma rays (INFN APOLLO

experiment)

Devices under test:

30V STP80NF03L-04

30V LR7843

200V IRF630

Used doses:

I 1600 Gray

II 3200 Gray

III 5890 Gray

IV 9600 Gray

Measurements :

Breakdown Voltage @ VGS=-10V

Threshold Voltage @ VDS=5V

ON Characteristic @ VGS=10V

Gate Leakage @ VDS=10V

For each type of device 20 samples were tested, 5 for each dose value

(tested at the ENEA Calliope Test Facility)



200 V Mosfet: IRF630 (courtesy of APOLLO Experiment)

Large parameters variation from device to device. How to document these results in a database?


Power mosfet exposed to protonsThe results are still preliminary. Only the 200V Mosfets (IRF 630, samples from two different manufacturers) were exposed. Test done by measuring SEBs.

Proton energy: 216 MeV (facility at Massachusetts General Hospital, Boston)Ionizing Dose: < 30 Krads

An “absolute” cross section will require the knowldege of the area of the Mosfet die which is unknown.

10-12

10-11

10-10

10-9

10-8

10-7

182 184 186 188 190 192 194 196

IRF630 - ST

Cro

ss S

ectio

n [c

m-2

]

VDS [Volt]

10-12

10-11

10-10

10-9

10-8

10-7

175 180 185 190 190 195

IRF630 - International Rectifier

Cro

ss S

ectio

n [c

m-2

]

VDS [Volt]


Power Mosfets …

The number of SEB events recorded at each VDS was small less then 30 events for the ST less than 150 events for the IR devices Large statistical errors affect the measurements

The cross section at VDS = 150 V (“de-rated” operating voltage) can not be properly estimated Dependence from manufacturer “Knee” not well defined

• To effectively qualify the devices for 10 years of operation at Hi-LHC, the cross section has to be of the order of 10-17/ cm2, which puts the failure rate at <1 for 10 years of operation

• Proton irradiation campaigns with increased fluences and more samples are planned.


Conclusion

The survey of the existing data has given some input for the information that have to be gathered for the DATABASE

The irradiation facilities need to be chosen accordingly to the radiation spectra expected in the HEP experiments

Test on “typical” devices of interest in future HEP experiments (both in collaboration with other Institution and directly by INFN) are ongoing.

More and more results will be available in the coming months The database will in any case a limited number of components It is reasonable to imagine that the database will grow even after AIDA

lifetime.

AIDA WP8.4 Qualification of components (Electronics)

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