Advanced solutions for HDD head and media manufacturing

E. Noel AbarraCanon ANELVA Corporation2-5-1 Kurigi, Asao-ku, Kawasaki-shiKanagawa 215-8550, JAPAN(Sept. 2007)

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Manufacturing solutions

HDD Comp. Application/Process

Head

MTJ Read sensorOxide deposition, multilayersReader shaping, hard biasRIE, IB milling, directional sputteringShields, spacers, write head

PMR mediaBit Patterned MediaRIE, IBE, directional sputtering

Media

Model

C-7100

C-7600HBI-4500

C-7600TF

C-30xxPatterning Tool

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Read-sensor deposition

20 Å

Up to 8” diameter waferThickness uniformity ≤ 0.5%, 1σPrecise thickness control ≤ 0.1ÅUHV base pressure ≤ 5×10-9 TorrLow pressure sputteringSmall target sizeCo-sputtering capabilityProprietary processes

Y. Nagamine, et al., Appl. Phys. Lett. 89, 162507 (2006).

MgO-based MTJ

C-7100MRAM film fabrication standard.

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Hard bias fabrication

Al2O3

TaCoPt

Cr

1. TMR dep. + Ta mask + PR

2. RIE + ashing(+ IBE)

3. Insulator dep. 4. Hard bias dep. +cap layer

PCM (directional sputtering)RIE, IBEC-7100

C-7600HB with RIE, IBE and iPVDcapabilities; all without breaking vacuum.

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TMR patterning and HB deposition

Center

IBE/RIE shaping of TMR Nordiko (NTSL) broad ion beam

technology.MICP – high taper angle etch methanol RIE.

Uniform RA; no corrosion or side wall re-deposition.

Hard bias depositionUniform thickness, directional PVD on patterned wfrs (5~8”).

Small targets (7”), high HCfilms.

C-7600HB

Edge

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Hard bias formation

7600HB RIE-PCM IBE-IBD

Throughput 2~3× higher low IBD deposition rate

Etching features

clean, no shorts, high selectivity

wall re-deposition, possible shorts, poor selectivity

Etch angle70-80° withmetal mask

shallow

In-board/Out-board symmetric deposition

present due to incidence angle spread

Running costs small targetslarge rectangular targets, expensive Molybdenum grids

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Thick film deposition

MR shields

trailing shieldwrite pole

10 µm

insulating spacer1PVD-EX module (8” wafers):

Uniformity: <1% 1σ (TaN, Ta)Deposition rate: 4~8 Å/sec

C-7600TFRs Uniformity: < 1% Rs Uniformity: <1%

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Al2O3 and SiC insulators

Al2O3 SiC.8 µm3 µm 2

Rate > 15 nm/minUniformity 8” [1σ] < 1%Refractive index ~1.65Substrate T < 80°C

Rate > 11 nm/minUniformity 8” [1σ] < 0.5%Substrate T < 85°C

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Media (Outline)PMR high pressure sputteringBit patterningNew sputtering system

Head (Summary)TMR Reader excellent RA and MRThe hard bias high taper angle, symmetric

deposition, all in vacuo process, low CoO

Thick films excellent uniformity and high throughput

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Rigid Disk Media Manufacturing

C-3040: PMR 1200 pph, >7 days between PM’s

Introduced: Carrier exchangesystem, P0 holder etcher, magnetic cooling, SUL and high pressure process magnet cathodes, 4 cathode rotating module . . .

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High pressure: Erosion profile

(A) Ref.

C

B

A

CB

Nonmagnetic, 9 mm, 5 Pa (37.5 mTorr)

Magnetic granular oxide, 7 mm, 5 Pa (37.5 mTorr)

Target Utilization (%)

> 40% longer operation feasible.

05

10152025303540

A B C

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RIE-processed patterned media

Height: 25-30 nm

MFMAFM

Resist/Ta: 150 nm/15 nm

Resist/Ta: 200 nm/20 nm

MagLayer

Intermediate Layer

(DTM)

T. Shimatsu et al., Tohoku Univ., unpublished.

I-4500MICP RIE

(BPM)

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C-3040 New version

Ref.: C-3040 (PMR: 1200 pph, >10 days between PM’s)

Enhanced transport mechanismIncreased throughput (>30% more)Expected particle reductionLess consumable parts Reduced maintenance times (up to 50%)ICP carbon overcoat optionAvailable 2008 Q2

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SummaryHead

TMR Reader leading performanceThe hard bias steep taper angle, symmetric

depositionThick films excellent uniformity and

high throughputMedia

Efficient cathodes for high PAr+M sputteringExperienced in key patterning technologies Enhanced new sputtering system

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Canon ANELVA relocationCome visit us at our new facility.

(3x the floor space of former Fuchu facility)

Kurigi, Kawasaki

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DTR or Bit Patterned MediaHattori et al., IEEE Trans. Magn. vol. 40,

pp. 2510-2515, 2004. photoresist + NILHM etch (RIE, RIBE)hard mask

recording layer

substrateSUL

deposition imprint and patterning

overcoatSiO2 filling planarization (IBE)RL etch (IBE)

pattern etching, deposition, and planarization

Technologies are available in house – and are being integrated.(Canon Anelva provides IBE, dry etch, and directional sputtering tools.)