ADVANCED METAL INTERCONNECT EXAMPLESbbaas/116/notes/... · • Microprocessor interconnect • 8...
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ADVANCED METAL INTERCONNECT EXAMPLES
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EEC 116, B. Baas 41
Four Levels of Metal Example
Source: Digital Integrated Circuits, 2nd ©
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EEC 116, B. Baas 42
Advanced Metallization
Source: Digital Integrated Circuits, 2nd ©
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EEC 116, B. Baas 43
MicroprocessorInterconnect
Source: IBM
• Microprocessor interconnect
• 8 levels of metal
• Steadily increasing pitch and thickness with higher levels for higher performance
Source: ITRS Interconnect, 2005
m8
m7
m6
m5
m4
m3
m2
m1
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EEC 116, B. Baas 44
ASIC Interconnect
Source: IBM
• Application Specific IC (ASIC) interconnect
• 8 levels of metal
• More regular structure
– Semi-global is 2x Intermediate pitch
– Global is 4x Intermediate pitch
Source: ITRS Interconnect, 2005
m7
m6
m5
m4
m3
m2
m8
m1
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EEC 116, B. Baas 45
IBM90 nm
Source: IBM
• 64-bit micro-processor
• (1) Al(Cu) [top]
• (2) 6x Cu
• (3) 2x Cu
• (5) 1x Cu
• (1) W local [bottom]
– 0.12 µm width & spacing
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Intel14 nm
• Broadwell Core M
• 13 metal layers
• Super thick top level metal
• MIM-capacitor layer under the top level metal
EEC 116, B. Baas 46[Chipworks]
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Intel14 nm
• Broadwell Core M
• Detail of metal layers1–12
EEC 116, B. Baas 47[Chipworks]