About Micron

©2015 Micron Technology, Inc. All rights reserved. Information, products, and/or specifications are subject to

change without notice. All information is provided on an “AS IS” basis without warranties of any kind.

Statements regarding products, including regarding their features, availability, functionality, or compatibility,

are provided for informational purposes only and do not modify the warranty, if any, applicable to any

product. Drawings may not be to scale. Micron, the Micron logo, and all other Micron trademarks are the

property of Micron Technology, Inc. All other trademarks are the property of their respective owners.

Memory Makes it Possible.

Micron Makes it Happen.

©2016 Micron Technology, Inc. All rights reserved. Information, products, and/or specifications are subject to

change without notice. All information is provided on an “AS IS” basis without warranties of any kind.

Statements regarding products, including regarding their features, availability, functionality, or compatibility,

are provided for informational purposes only and do not modify the warranty, if any, applicable to any

product. Drawings may not be to scale. Micron, the Micron logo, and all other Micron trademarks are the

property of Micron Technology, Inc. All other trademarks are the property of their respective owners.

A Story About Micron

The Company

Technology Leadership

Changing the way the

world learns,

communicates, and

entertains

Industry Expertise

Focused on world-

leading technology for

computing, consumer,

networking, storage

embedded, and

mobile products

© 2016 Micron Technology, Inc.

Micron by the Numbers

37 Years strong in

2O Countries with 13 Manufacturing and R&D sites,

3O,OOO+ Team Members and

Net Sales in 2015 of

$16,1OO,OOO,OOO | May 12, 20165

Mark Durcan

CEO, Micron

Company History and

Global Footprint


Micron Milestones

1978 1980 1981 1984 1987 1994 1996 1998 1999 2002 2004 2005 2006 2007 2008 2010 2011 2012 2013 2015

Micron

Technology

Inc. founded

First 64K

DRAM product

ships

1-megabit

DRAM product

introduced

Crucial

Technology

created to

market to end

users

Micron

Foundation

established

First 2-gigabit

NAND flash

product ships

Acquired Lexar

Media

Micron, Nanya

form DRAM

joint venture

Hybrid

Memory Cube

technology

debuts

Micron

announced

development

of Automata

Processor

Acquires

Elpida

Memory and

Rexchip

Electronics

Ground

broken on first

wafer

fabrication

plant in Boise

World’s

smallest 256K

DRAM product

introduced

Micron

publicly traded

on Nasdaq

Micron named

a Fortune 500

company

Acquires Texas

Instruments’

worldwide

memory

operations

First 1-gigabit

DDR DRAM

demonstration

Acquired

Toshiba’s

DRAM

operations in

Virginia

Micron and

Intel form

NAND joint

venture in

Flash

technology

RealSSD family

of solid state

drivers

introduced

Acquired NOR

manufacturer

Numonyx

Exclusive

rights to

Inotera output

acquired

Ground

broken on

expansion in

Singapore

100K sq ft

expansion

begins of

Boise R&D

facility

Revolutionary

3D XPoint

technology

unveiled

9 | May 12, 2016


Corporate Headquarters and R&D FacilitiesBOISE, ID

10 | May 12, 2016


Global Manufacturing Scale2

Lehi, Utah USA Manassas, VA USA

3

13

2

4

5

6

7

8

9

10

11

4

Agrate, Italy

Hiroshima, Japan

10

Akita, Japan

11

5

Muar, Malaysia

9

Xian, China

7

Taiwan (Inotera)

6

Singapore

8

Taiwan

1

Boise, Idaho USA

11 | May 12, 2016

Delivering on Our

Customer Promise


Our Customer Promise

Micron, the memory and

storage solutions

expert, delivering

quality and performance

through trusted

collaboration

Micron’s DRAM, NAND, and advanced

controller technologies provide the

foundation to our product solutions –

from application-tailored memory

modules to flash-based solid state drives

Our success is measured by the success

of our customers – enabled by the

quality of our solutions, technical

support, and delivery services

We’re dedicated to developing trusted

relationships with our customers, powering

leading-edge computing, consumer, enterprise

server and storage, networking, embedded,

automotive, industrial, and mobile solutions

13 | May 12, 2016


Global Customer Lab Network

14 | May 12, 2016


Serving a broad set of customer applications

15 | May 12, 2016


We collaborate with our partners

Our mission is to help our

customers use our machines

to change the world. Micron

has been a big part of that in

the memory subsystems of

our supercomputers.”

Peter Ungaro

President and CEO, Cray Inc.

| May 12, 201616


We build new partnerships

From design to

collaboration, Micron

has been incredibly

positive for the growth

of Phrazer technology.”

Mat Johnson

CEO/Founder, GeaCom, Inc.

| May 12, 201617

Our Product Offering


8% 5% 5%

11%11% 13%

2%3%

3%

20%27% 21%

9%

7%8%

5%4%

5%

8% 5%6%

20%

14% 15%

14%23% 23%

3%1% 1%

0%

10%

20%

30%

40%

50%

60%

70%

80%

90%

100%

FY13 FY14 FY15

% o

f M

icro

n T

ota

l Re

ven

ue

Source: FSG

We offer a diversified product mixEND-MARKET REVENUE DIVERSIFICATION

EndApplication

Other

SSD Storage

Other Storage

AIMM

Mobile

Compute

Networking

Other Embedded

Server

Graphics

| May 12, 201619


SDRAM

DDR

DDR2

DDR3

DDR4

GDDR5

GDDR5X

RLDRAM®

Mobile LPDRAM

DRAM Families

FBDIMM

RDIMM

VLP RDIMM

VLP UDIMM

UDIMM

SODIMM

SORDIMM

Mini-DIMM

VLP Mini-DIMM

LRDIMM

NVDIMM

DRAM Modules

Bare DieMultiple

Technologies

NAND FlashTLC, MLC, SLC

Serial NAND

Enterprise NAND

NAND MCP

3D NANDSolid State DrivesClient SSD

Enterprise SATA

Enterprise SAS

Enterprise PCIe

Managed NANDMCP

eMMC™

Embedded USB

NOR FlashParallel NOR

Serial NOR

NOR MCP

And an expansive product offering

20 | May 12, 2016


Leading with new innovations: HMC

Evolutionary DRAM roadmaps hit limitations of bandwidth

and power efficiency

Micron introduces a new class of memory: Hybrid

Memory Cube

Unique combination of DRAMs on Logic smashes through

the memory wall

Breaking through “memory wall”

Unparalleled performance

Provides 15X the bandwidth of a DDR3

module

Uses 70% less energy per bit than existing

memory technologies

Reduces the memory footprint by nearly

90% compared to today’s RDIMMs

Key applications

Data packet processing, data packet

buffering, and storage applications

Enterprise and computing applications

How did we do it?

Micron-designed logic controller

High speed link to CPU

Massively parallel “Through Silicon

Via” connection to DRAM

21 | May 12, 2016


Leading with new innovations: 3D NANDHOW 3D NAND ENABLES INNOVATION

How did we do it?

We’re the first to employ floating gate cell

technology in 3D NAND—a proven cell technology

that enables better performance, quality, and

reliability. We stack 32 storage tiers to achieve the

highest-capacity NAND die available today: 256Gb

multilevel cell (MLC) and 384Gb triple-level cell (TLC)

3D NAND.

Our 3D NAND solutions bring significant

performance, power, and capacity advantages to

storage applications

Pack in More Capacity

Get 3 times the capacity of existing NAND

products—enough to enable 3.5TB gum stick-sized

SSDs or more than 10TB in standard 2.5-inch SSDs.

Boost Performance

Achieve significantly higher read/write bandwidth

and I/O speeds, as well as improved random read

performance, thanks to our 3D NAND’s fast 4K read

mode.

Save Power

Reduce power consumption significantly in standby

mode thanks to 3D NAND’s new sleep mode features

that cut power to inactive NAND die (even when

other die in the same package are active).

22 | May 12, 2016


Leading with new innovations: 3D XPoint™ Memory

Combining the very best capabilities of existing

technologies, 3D XPoint has the potential to

dramatically transform computing architectures

FIRST NEW MEMORY CATEGORY IN DECADES

1000XFASTER

THAN NAND

1000XENDURANCE

OF NAND

10XDENSER

THAN CONVENTIONAL MEMORY

| May 12, 201623


And deliver innovative solutions2015

Micron and Crucial Introduce Next-Gen SSD for Personal Storage, Media, Entertainment

Mar

Collaborates with Intel on high-performance solution

Jun

Selected as Leading Provider for server portfolio

Aug

Launch of Automata SDK; expands embedded MCP portfolio

Oct

Apr

Announces DDR4; releases M500DC SATA; Named Design Team of the Year, with Altera

Jul

Announces first monolithic 8Gb DDR3; 16nm NAND awarded Semiconductor of the Year

Sep

M600 SSD introduced for portable computing

Jul

Automata Processor wins Best of 2014 Design Technology award

| May 12, 201624


Innovative solutions2015

Micron announces new flash storage designed for consumer applications

Jun

Micron offers new SAS solid-state drives for data-intensive applications

Aug

Selected as Leading Provider for server portfolio

Oct

Jul

Intel and Micron produce breakthrough memory technology; new SATA solid-state drive introduced, featuring enterprise encryption

Sep

Micron foundation establishes $206,000 SGD endowment at Singapore university

Nov

Micron combines DRAM performance

with NAND Flash reliability

25 | May 12, 2016

State of the Industry


Five Big Technology Trends

Big DataCloudNetworking Mobile

Machine

To

Machine

27 | May 12, 2016


Non-PC

$35B

PC

$10B

NAND

$31B

NOR

$2B

Worldwide

semiconductor

market

$338B

DRAM

$45.4

Flash

$33.1

Source: Gartner 3Q15

2015 Semiconductor Market Forecast

28 | May 12, 2016


Memory Industry: FY 2008 vs Today

| May 12, 201629

DRAM+ NAND

+ NORDevelopers

DRAM+ NAND

Developers

SingleMemory

Developers

2015 Memory Revenue (% of Group Total)¹

Top Five Market Share: 94%

Source: Gartner1 Group total defined as only those companies listed on this page, although others may also exist. Percentages may not add to 100% due to rounding.2 Micron Includes NAND sold to Intel from IM Flash.3 Samsung and Toshiba include total memory

2008 Memory Revenue (% of Group Total)¹

Top Five Market Share: 76%

2%

2%

3%

6%

6%

7%

7%

11%

12%

17%

29%

0% 10% 20% 30% 40% 50%

Macronix

Winbond

Nanya

Spansion

Qimonda

Elpida

Toshiba

SanDisk

Micron

SK Hynix

Samsung

1%

1%

1%

1%

2%

6%

9%

18%

21%

40%

0% 10% 20% 30% 40% 50%

Macronix

Cypress/Spansion

Winbond

Intel

Nanya

SanDisk

Toshiba

Micron

SK Hynix

Samsung

Financial Performance

© 2016 Micron Technology, Inc. |

FQ2 2016 Financial Summary

Dollars in millions, except per share FQ2-16 % of

Sales

FQ1-16 % of

Sales

Net sales $ 2,934 100% $ 3,350 100%

Gross margin 579 20% 849 25%

Operating income (loss) (4) (0%) 247 7%

Income tax (provision) benefit 4 (13)

Net income (loss) attributable to Micron shareholders $ (48) (2%) $ 249 7%

Diluted earnings (loss) per share $ (0.05) $ 0.24

Cash provided by operating activities $ 763 $ 1,120

Cash and marketable investments $ 5,143 $ 5,412

NON-GAAP

31 May 12, 2016


Fiscal Year 2015 Financial Summary

Dollars in millions, except per share FY–15% of

SalesFY-14

% of

Sales

Net sales $ 16,192 100% $ 16,358 100%

Gross margin 5,215 32% 5,437 33%

Operating income 2,998 19% 3,087 19%

Income tax (provision) benefit (157) (128)

Net income attributable to Micron shareholders $ 2,899 18% $ 3,045 19%

Diluted earnings per share (GAAP) $ 2.47 $ 2.54

Diluted earnings per share (Non-GAAP) $ 2.72 $ 3.23

Cash provided by operating activities $ 5,208 $ 5,699

Cash and marketable investments $ 5,634 $ 5,353

| May 12, 201632


Source: Micron Technology, Inc. 2014 Form 10-K

Europe Asia(including China, Japan, Asia

Pacific, Malaysia, and Taiwan)

Americas(including US and others)

Micron FY15 Revenue % by Geography

8% 18%

74%

33 | May 12, 2016


Revenue Diversification by Memory Technology

34

NOR

Other

NAND

DRAM

Source: Micron (NOR does not include purchase accounting adjustments).

Percentages might not equal 100% due to rounding.

54%50%

60%

41% 39%48%

68%64%

35%39%

30%

36%44%

40%

27% 33%

18%12%

9%3% 3%

11% 11%5% 5% 5% 3% 1% 1%

0%

20%

40%

60%

80%

100%

FY-08 FY-09 FY-10 FY-11 FY-12 FY-13 FY-14 FY-15

% o

f M

icro

n T

ota

l R

even

ues

| May 12, 2016

How memory is made


Process Steps

Memory chip design

Technology development

Fabrication: initial build

Probe: the first test step

Assembly: connecting silicon with the system

Final Test: the last test step before shipping

Post Electrical: marking and packaging for shipment

Module and SSD assembly

36 | May 12, 2016

Backup Slides


DRAM Memory

Cutting-edge Memory DevelopmentInnovative memory architectures – Hybrid Memory Cube

Significant R&D investment and expansion

Broad DRAM PortfolioLegacy support for Networking and Automotive Markets

(SDR, DDR, DDR2)

Specialty DRAM for Networking and Graphics Markets

(RLDRAM, GDDR5)

High-performance, reliable modules for Server Market

(LRDIMM, RDIMM)

Power and cost effective products for Mobile and Client

Market (DDR3-RS, LPDDR3)

| May 12, 201639


NAND Flash Memory

Technology LeadershipAggressive scaling means compelling new products reach

the market sooner

Silicon-to-System Storage DevelopmentWe integrate NAND, controller, and firmware to develop

robust storage solutions

Customer-Focused SolutionsFrom discrete NAND flash to fully integrated storage

systems, our portfolio helps customers drive innovation in

their own applications

| May 12, 201640


NOR Flash Memory

Leading ManufacturerMicron is the world’s largest NOR supplier, with the most

extensive product selection: embedded, automotive,

industrial and mobile

On-going Technology LeadershipIntroduced 64Mb SPI NOR with Replay Protected

Monotonic Counter feature for enhanced security

Extensive 65nm Embedded NOR solutions; 45nm products

in development

Dual paths in NOR Development and Support Next generation, high performance support

Long-term legacy solutions

| May 12, 201641

Micron Consumer Products Group

About Us


Competitive Advantage

Fully integrated manufacturing, sales, and marketing

One of the broadest product portfolios in the industry: DRAM, SSD, memory cards, USB

flash drives

More than 15 years experience in the memory market

Global presence with local operational support

Employees: ~500

10 locations in 8 countriesPRODUCT BRANDS

The consumer-facing business of

Micron, providing finished products

through various channels.

| May 12, 201643


Micron CPG Product Portfolio

USB Flash Drives

Mobile Cards

Photography Cards

Gaming Memory

Solid State Drives

Readers & Storage Drives

2.5-inch Modular

Desktop / Laptop Server

USB 2.0 USB 3.0

Client & Server Memory

Enterprise

44 | May 12, 2016

How Memory is Made


1

How Memory Is Made

Memory chips are integrated circuits made out of billions of capacitors and transistors that can store data and process code. They play

a significant role in the overall performance and power of multiple types of applications; therefore, they are optimized for efficient

data transfer to the system. High-level inputs to the design process include marketing specifications or data sheets, process capability

or design rules, transistor models, and testing requirements. Designer functions include transistor-level digital and analog circuit

design, simulation, die-level floor planning, layout, reliability analysis, power delivery optimization, and complete functional and

physical verification. The design process incorporates hundreds of rules, computer-aided design tools, and a carefully controlled

process to transform a design specification into a fully functioning memory chip. The goal is to pave the way for the production of a

highly reliable, cost-efficient memory chip that provides optimal power, speed, and performance.

Memory Chip Design

47 | May 12, 2016


2

How Memory Is Made

Technology Development begins with the creation of design rules and continues until a process node is qualified and ramped in

manufacturing. Design rules effectively describe the new technology capability that future memory chip designs will utilize to enable

density increases, new circuit capabilities, and manufacturing cost reductions. Once the memory circuit design for a new product has

been completed, the circuit that was drawn by the designers is transformed into a functional physical structure on a wafer. Typical

steps in the early development stage include the screening and characterization of new materials, pattern formation at line widths

required for the new design, and the development of process architecture options. Once the materials have been identified, new

processes and equipment are developed for depositing, patterning, selectively removing, and cleaning the new materials. In addition,

interactions of the materials and processes present in the new memory chip are thoroughly examined. The processes that are

developed become “recipes,” which prescribe specific parameters for treating the wafer at each step as it moves through the fab. Each

recipe is optimized through various experiments to achieve the best possible product performance at the lowest possible cost.

Technology

Development

48 | May 12, 2016


3

How Memory Is Made

Making state-of-the-art semiconductor products requires major investments in facilities, in

equipment, and in building a talented workforce. The foundation of a memory chip (or die) is a

silicon wafer. Hundreds of die are manufactured on one wafer, and it can take more than a month

and hundreds of steps from the time a new silicon wafer enters the fab until it has been fully

processed. Fabrication takes place in a cleanroom environment where particle levels, temperature,

and humidity are tightly controlled to ensure the quality of the final memory chip. There are 10

process areas in the fab, each with a unique set of tools. In each tool, the wafer is processed with an

optimized recipe developed by the Technology Development Team. The recipe specifies the exact

parameters (temperature, pressure, time, etc.) that the wafer needs to be treated with. Some of our

most complex products require the wafer to move from tool to tool as many as 1,000 times.

Fabrication:

Initial Build

49 | May 12, 2016


4

How Memory Is Made

Making state-of-the-art semiconductor products requires major investments in facilities, in equipment, and in

building a talented workforce. The foundation of a memory chip (or die) is a silicon wafer. Hundreds of die are

manufactured on one wafer, and it can take more than a month and hundreds of steps from the time a new silicon

wafer enters the fab until it has been fully processed. Fabrication takes place in a cleanroom environment where

particle levels, temperature, and humidity are tightly controlled to ensure the quality of the final memory chip. There

are 10 process areas in the fab, each with a unique set of tools. In each tool, the wafer is processed with an

optimized recipe developed by the Technology Development Team. The recipe specifies the exact parameters

(temperature, pressure, time, etc.) that the wafer needs to be treated with. Some of our most complex products

require the wafer to move from tool to tool as many as 1,000 times.

Probe:The First

Test Step

50 | May 12, 2016


5

How Memory Is Made

In Assembly, individual die are put into packages which prevent physical damage and

corrosion and enable customers to assemble them into their products. First, a wafer-thinning

process attaches a wafer to adhesive tape and the majority of the silicon is removed from the

back side of the wafer. Then a diamond-edged saw blade, approximately the thickness of a

human hair, cuts the wafer into individual die. The wafer map that was created in Probe to

identify and select only the good die is then used to individually pick and place the die on a

substrate that will form part of the package. Next, the die are electrically attached to the

substrate, or stacked upon other die already attached to the substrate, using wire-bonding, flip

chip, or through-silicon via technology. A molding process, which is used to form a protective

material around the die, produces the final package.

Assembly:Connecting

Silicon with

the System

51 | May 12, 2016


6

How Memory Is Made

Making state-of-the-art semiconductor products requires major investments in facilities, in equipment, and in building a

talented workforce. The foundation of a memory chip (or die) is a silicon wafer. Hundreds of die are manufactured on

one wafer, and it can take more than a month and hundreds of steps from the time a new silicon wafer enters the fab

until it has been fully processed. Fabrication takes place in a cleanroom environment where particle levels, temperature,

and humidity are tightly controlled to ensure the quality of the final memory chip. There are 10 process areas in the fab,

each with a unique set of tools. In each tool, the wafer is processed with an optimized recipe developed by the

Technology Development Team. The recipe specifies the exact parameters (temperature, pressure, time, etc.) that the

wafer needs to be treated with. Some of our most complex products require the wafer to move from tool to tool as many

as 1,000 times.

Final Test: The

Last Test Step

Before Shipping

52 | May 12, 2016


This area defines a temporary pattern that other areas use as

a mask to create structures on the wafer. This pattern is

created on photoresist, a photosensitive film. Yellow ceiling

lights are used to prevent unwanted exposure of photoresist

because their wavelength does not damage the photoresist.

This area deposits or grows different films on the wafer. Gases are

introduced into a chamber, producing a solid film which deposits

on the wafer. CVD tools run one or two wafers at a time.

The 10 Fab

Process Areas

Photolithography

Metrology

Real-Time Defect

Analysis (RDA)

Dry Etch

Diffusion

Chemical Vapor

Deposition (CVD)

Physical Vapor

Deposition (PVD)

Wet Etch

Chemical

Mechanical

Planarization

(CMP)

Implant

This area evaluates the process operations by measuring the

following: film thicknesses, critical dimensions, film resistivity,

film composition, optical properties, stress, dopant

concentration and surface damage.

This area inspects the wafers for defects at critical points in

the manufacturing process. RDA communicates with other

fab process areas through data collection and analysis to help

reduce defects.

This area removes (etches) films using ionized plasma. Dry

Etch usually processes wafers where a temporary mask was

previously patterned. The mask protects certain wafer regions

and only removes films from unprotected regions. Very

precise patterns can be etched into films.

This area deposits or grows different films on the wafer. Gases

are introduced into a chamber. A solid film, which is a product

of the reaction, deposits on the wafer. Most Diffusion tools

load and run multiple lots at a time.

This area deposits films on the wafer. A wafer is introduced into a

PVD tool where a solid target is deposited on the wafer. The tool

generates plasma, whose ions bombard the target, dislodging

very small pieces of material. Those pieces are deposited on the

wafer, forming the film.

This area uses chemical baths and de-ionized water to remove

films and clean wafers to reduce defects. This area also performs

Dry Cleans, to remove photoresist and other films, and Metal

Plating, used to deposit some metals by submerging the wafer

into a chemical bath.

This area polishes the wafer to remove and planarize materials.

Planar wafers enable patterning of very small features. CMP uses a

polishing pad and a chemical slurry made of fine abrasive

particles suspended in a dilute chemical solution to perform the

polishing process.

This area introduces dopants into the wafer. Dopants are specific

elements that modify properties of the films they are added to.

Wafers coming into this area that have a temporary mask will only

receive dopants in the unprotected regions.

Click a topic…

53 | May 12, 2016

About Micron

Documents

Transcript of About Micron